CN115963374A - Self-adaptive adjusting circuit and laser ranging chip - Google Patents
Self-adaptive adjusting circuit and laser ranging chip Download PDFInfo
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- CN115963374A CN115963374A CN202211227389.4A CN202211227389A CN115963374A CN 115963374 A CN115963374 A CN 115963374A CN 202211227389 A CN202211227389 A CN 202211227389A CN 115963374 A CN115963374 A CN 115963374A
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Abstract
The invention discloses an adaptive adjusting circuit and a laser ranging chip. The adaptive adjusting circuit comprises a current sampling module, a transimpedance amplifier and a booster circuit, wherein the current sampling module acquires the output current of the photodetector array, the transimpedance amplifier compares the output current with a reference current, a corresponding voltage adjusting signal is output according to the comparison result, and the booster circuit adjusts the driving voltage of the photodetector array according to the voltage adjusting signal to enable the photodetector array to be in an avalanche breakdown state.
Description
Technical Field
The invention belongs to the technical field of optical detection, and particularly relates to a self-adaptive adjusting circuit and a laser ranging chip.
Background
In recent years, time Of Flight (TOF) technology has been widely applied to unmanned driving, and in the fields Of laser radar, machine vision and the like, TOF ranging is considered to be one Of the most accurate and reliable and effective ranging means in the future. When the Direct Time Of flight (Fly) distance measurement is carried out, the accurate distance measurement is realized by utilizing the light pulse to be sent out from the transmitting end, reflected by an object and then reach the receiving end and recording the round-trip flight Time Of photons.
A Single Photon Avalanche Diode (SPAD) is the most commonly used receiving device for a receiving end at present due to its good Photon sensitivity characteristic, and in general, a power supply voltage provided by a system for two ends of the SPAD is constant, such as 27Volt; however, the Breakdown (BD) voltage across the SPAD varies with temperature. If the VBD is increased due to the temperature rise, such as 27.5Volt, the SPAD which is originally in the breakdown critical state is in the sub-avalanche state, so that even if reflected light rays impinge on the SPAD, the SPAD cannot be subjected to the avalanche effect, and the light sensing capability and the detection effect are reduced.
In order to solve the problem that the SPAD can be in an avalanche state even when the environmental temperature changes, a reference voltage generation module corresponding to the SPAD is generally added in an SPAD regulation circuit at present, as shown in fig. 1, the reference voltage generation module generates a corresponding reference voltage VREF according to a temperature coefficient, a comparator clamps a feedback voltage VFB at the end of the SPAD to the reference voltage VREF, and finally, a charge pump generates a high voltage enough for the SPAD to enter an avalanche critical point. In actual operation, the temperature coefficient of VBD (i.e., SPAD breakdown voltage) needs to be measured first, and then the temperature coefficient of VREF (reference voltage generation module) needs to be adjusted according to the measured VBD temperature coefficient.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide an adaptive adjusting circuit and a laser ranging chip.
In order to solve the technical problems, the invention adopts the following technical scheme:
an adaptive tuning circuit for a light detector, comprising:
the current sampling module is used for acquiring the output current of the photodetector array;
the trans-impedance amplifier is used for comparing the output current with a reference current and outputting a corresponding voltage regulating signal according to a comparison result;
and the voltage boosting circuit is used for adjusting the driving voltage of the photodetector array according to the voltage adjusting signal so that the photodetector array is in an avalanche breakdown state.
Preferably, in the adaptive adjustment circuit for the optical detector, the reference current is a current when the optical detector array breaks down, and the reference current does not change with temperature.
Preferably, in the adaptive adjustment circuit of the optical detector, the current sampling module is specifically configured to obtain a current average value of output currents of the optical detector array, and output the current average value to the transimpedance amplifier.
Preferably, in the adaptive adjustment circuit for the optical detector, the current sampling module includes a current mirror, an input end of the current mirror is connected to the anode of the optical detector array, and an output end of the current mirror is connected to an input end of the transimpedance amplifier.
Preferably, in the adaptive adjusting circuit of the optical detector, the current mirror includes: the high-precision optical detector comprises a first MOS tube and a second MOS tube, wherein the drain electrode of the first MOS tube is connected with the anode of the optical detector array, the grid electrode of the first MOS tube and the grid electrode of the second MOS tube, the source electrode of the first MOS tube and the source electrode of the second MOS tube are grounded, the drain electrode of the second MOS tube is connected with one input end of a transimpedance amplifier, the other input end of the transimpedance amplifier is connected with a reference current output end, and the output end of the transimpedance amplifier is connected with a booster circuit.
Preferably, in the adaptive adjustment circuit of the optical detector, the width-to-length ratio of the first MOS transistor is n times the width-to-length ratio of the second MOS transistor.
Preferably, in the adaptive adjusting circuit of the optical detector, the transimpedance amplifier includes: differential amplifier, comparator, first resistance and second resistance, differential amplifier's inverting input is an input of transimpedance amplifier, differential amplifier's inverting input connects the drain electrode of second MOS pipe, also connects differential amplifier's first output through first resistance, and differential amplifier's first output still connects the normal phase input of comparator, differential amplifier's normal phase input is another input of transimpedance amplifier, differential amplifier's normal phase input connects the reference current output, also connects differential amplifier's second output through second resistance, and differential amplifier's second output still connects the inverting input of comparator, the input of boost circuit is connected to the output of comparator.
Preferably, in the adaptive adjustment circuit of the optical detector, a resistance value of the first resistor is the same as a resistance value of the second resistor.
Preferably, in the adaptive adjustment circuit for the optical detector, the voltage boost circuit includes a charge pump, and when the transimpedance amplifier outputs a high level, the charge pump boosts an output voltage to boost a driving voltage of the optical detector array until the sampling current is greater than or equal to the reference current.
The invention also provides a laser ranging chip which comprises at least one optical detector array and a self-adaptive adjusting circuit.
Compared with the prior art, the self-adaptive adjusting circuit and the laser ranging chip provided by the invention have the advantages that the output current of the optical detector array is obtained by the current sampling module in the self-adaptive adjusting circuit, the output current is compared with the reference current by the transimpedance amplifier, the corresponding voltage adjusting signal is output according to the comparison result, and then the driving voltage of the optical detector array is adjusted by the voltage boosting circuit according to the voltage adjusting signal so that the optical detector array is in an avalanche breakdown state. The invention samples the current flowing through the SPAD through the current sampling module, compares the current with the reference current to determine the boosted voltage of the booster circuit, does not need to adjust the temperature coefficient, and can generate the breakdown voltage required by the SPAD at any temperature, thereby ensuring the light sensing capability and the detection accuracy of the photoelectric detector array.
Drawings
Fig. 1 is a schematic circuit diagram of a SPAD regulating circuit in the prior art.
FIG. 2 is a graph illustrating the breakdown voltage of a photodetector array as a function of temperature.
Fig. 3 is a schematic circuit diagram of an adaptive adjustment circuit according to the present invention.
FIG. 4 is a graphical illustration of the IV curve for the photodetector array.
Fig. 5 is a schematic circuit diagram of a current sampling module in the adaptive adjusting circuit provided by the present invention.
Fig. 6 is a schematic circuit diagram of a transimpedance amplifier in the adaptive tuning circuit provided in the present invention.
Description of the reference numerals
The circuit comprises a current sampling module 10, a transimpedance amplifier TIA, a booster circuit 20, a photodetector array 30, a first MOS tube M1, a second MOS tube M2, a differential amplifier A1, a comparator A2, a first resistor Rf1, a second resistor Rf2, a first capacitor Cf1 and a second capacitor Cf2
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "on," "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
It should be noted that the terms of orientation such as left, right, up and down in the embodiments of the present invention are only relative to each other or are referred to the normal use state of the product, and should not be considered as limiting.
As shown in fig. 2, it can be known from the voltage curve of the SPAD that VBD (breakdown voltage) of the SPAD varies with temperature, and it can be known from fig. 2 that VBD exhibits positive temperature coefficient and has different temperature coefficients in different temperature intervals, whereas the prior art adopts a test to obtain the temperature coefficient of VBD, and adjusts the driving voltage of the SPAD by generating VREF (reference voltage) corresponding to the temperature coefficient, so as to make the SPAD array in an avalanche state at any temperature.
The invention solves the problems that the temperature coefficient of SPAD breakdown voltage needs to be measured firstly, and then the VREF (reference voltage) temperature coefficient is regulated according to the temperature coefficient of the SPAD breakdown voltage, so that the operation is very complicated, a large amount of CP tests are needed, the development period is long, and the development cost is high in the traditional SPAD power supply circuit.
The self-adaptive adjusting circuit of the optical detector does not need to adjust the temperature coefficient of VREF, and can generate the breakdown voltage required by SPAD at any temperature. Referring to fig. 3, the adaptive tuning circuit of the optical detector is connected to the optical detector array 30, which includes: a current sampling module 10, a transimpedance amplifier TIA and a booster circuit 20.
The optical detector array 30 is an SPAD array formed by a plurality of SPADs, an input end of the current sampling module 10 is connected to an anode of the optical detector array 30, and an output end of the current sampling module 10 is connected to one input end of the transimpedance amplifier TIA, and is configured to obtain an output current of the optical detector array 30 and transmit the output current to the transimpedance amplifier TIA.
The other input end of the transimpedance amplifier TIA is connected with a reference current generator (such as a band gap reference unit) and receives reference current output by the reference current generator, and the output end of the transimpedance amplifier TIA is connected with the boost circuit 20 and used for comparing the output current with the reference current and outputting a corresponding voltage regulation signal to the boost circuit 20 according to a comparison result. The voltage regulating signal is a high level signal or a low level signal.
The voltage boosting circuit 20 is connected to the negative electrode of the photodetector array 30, and is configured to adjust the driving voltage of the photodetector array 30 according to the voltage adjusting signal, so that the photodetector array 30 is in an avalanche breakdown state. For example, when the voltage regulation signal is a high level signal, the booster circuit 20 boosts the voltage according to the first boost command and outputs a higher voltage (for example, 29V), and when the voltage regulation signal is a low level signal, the booster circuit boosts the voltage according to the second boost command and outputs a lower voltage (for example, 27V). Wherein the duty cycle of the first boost command is higher than the second boost command.
In the self-adaptive adjusting circuit provided by the invention, the SPAD current Is sampled by the current sampling module 10, the sampling current Is compared with the preset reference current by the transimpedance amplifier TIA, if the sampling current Is less than the reference current Iref, the transimpedance amplifier TIA outputs high level, the boosting circuit 20 boosts according to the pulse signal of the first duty ratio and increases HVOUT voltage, so that the current of the SPAD array Is increased, when the sampling current Is more than or equal to the reference current, the transimpedance amplifier TIA outputs low level, the boosting circuit 20 boosts according to the pulse signal of the second duty ratio, the voltage can be less than initial state HVOUT, until the sampling current Is less than or equal to the reference current, at the moment, the circuit adjustment reaches balance, and the HVOUT voltage Is kept to be more than the SPAD breakdown voltage VBD.
And when the temperature changes, the HVOUT voltage is automatically adjusted, and the initial state is assumed: the duty ratio of a pulse signal for controlling the output current in the booster circuit is 50%, when the temperature rises, the SPAD array needs higher HVOUT voltage to trigger avalanche breakdown, the sampling current drops and is lower than the reference current, the transimpedance amplifier TIA outputs high level, the duration of the high level is longer than that in the initial state, therefore, the duty ratio of the pulse signal is larger than 50%, the output voltage is larger than the initial state HVOUT at the moment, and the sampling current is larger than or equal to the reference current. When the temperature drops, the SPAD array can trigger avalanche breakdown by needing lower HVOUT voltage, at the moment, the sampling current rises and is higher than the reference current, the transimpedance amplifier TIA outputs low level, the duration of the low level is shorter than that in the initial state, therefore, the duty ratio of the pulse signal is less than 50%, the output voltage is supplied with power by an external capacitor C (a capacitor shown in figure 3 and connected between HVOUT and the ground), the output voltage is less than that in the initial state HVOUT until the sampling current is less than or equal to the reference current, and therefore, the stability and the light sensing capability of the light detector array 30 during temperature change are greatly improved, and the detection accuracy is improved.
In the embodiment of the present invention, the reference current is a current when the photodetector array 30 breaks down, the reference current does not change with temperature, but the sampling current is related to whether the SPAD of the photodetector array 30 breaks down, and the reference current can determine the magnitude of the current when the SPAD breaks down through an experiment, as shown in fig. 4, in the drawing, the SPAD is a single photon avalanche diode, the APD is an avalanche diode, and the PD is a photodiode, where the reference current Iref can be directly obtained through experimental measurement.
Preferably, the current sampling module 10 comprises: the current mirror 101, the input end of the current mirror 101 is connected with the positive electrode of the optical detector array 30, the output end of the current mirror 101 is connected with one input end of the transimpedance amplifier TIA, and the current mirror 101 is specifically used for obtaining the current mean value of the output current of the optical detector array 30 and outputting the current mean value to the transimpedance amplifier TIA, so that the precision of the sampling current is improved.
Referring to fig. 5, the current mirror 101 includes: the MOS transistor comprises a first MOS transistor M1 and a second MOS transistor M2, wherein the first MOS transistor M1 and the second MOS transistor M2 are N-channel field effect transistors, and are switched on when the grid electrode of the first MOS transistor is at a high level and switched off when the grid electrode of the first MOS transistor is at a low level.
In this embodiment, the drain of the first MOS transistor M1 is connected to the anode of the photodetector array 30, the gate of the first MOS transistor M1, and the gate of the second MOS transistor M2, the source of the first MOS transistor M1 and the source of the second MOS transistor M2 are grounded, the drain of the second MOS transistor M2 is connected to one input end of the transimpedance amplifier TIA, the other input end of the transimpedance amplifier TIA is connected to the reference current output end, and the output end of the transimpedance amplifier TIA is connected to the voltage boost circuit 20.
For example, the photodetector array 30 has m photodetectors, where n photodetectors are triggered by photons to produce n current outputs, m>n, the invention adds n currents for averaging as a sampling current, wherein, the first MOS is connected with the sampling currentThe size of the transistor M1 is n × W/L, the size of the second MOS transistor M2 is W/L, where W is width and L is length, the current of each SPAD In the photodetector array 30 is input from the drain of the first MOS transistor M1 (i.e., I1 to In), and after being processed by the first MOS transistor M1 and the second MOS transistor M2, the sampling current obtained by the drain of the second MOS transistor M2 is W/L
The width-to-length ratio of the first MOS tube M1 Is n times of the width-to-length ratio of the second MOS tube M2, the sum of currents of all triggered SPADs can be obtained through sampling by the first MOS tube M1, the average value of the sampling currents Is obtained through current mirroring and then mirrored to the second MOS tube M2, and then the sampling current Is input to the transimpedance amplifier TIA.
Referring to fig. 6, the transimpedance amplifier TIA includes: the differential amplifier comprises a differential amplifier A1, a comparator A2, a first resistor Rf1 and a second resistor Rf2, wherein the first resistor Rf1 and the second resistor Rf2 are two feedback resistors. Preferably, the resistance of the first resistor Rf1 is the same as the resistance of the second resistor Rf2, so that the differential amplifier A1 is ensured to amplify only the current difference, and the control accuracy is ensured.
The differential amplifier A1 is provided with two input ends and two output ends, the inverting input end of the differential amplifier A1 is an input end of a transimpedance amplifier TIA, the inverting input end of the differential amplifier A1 is connected with the drain electrode of a second MOS transistor M2 and is also connected with the first output end of the differential amplifier A1 through a first resistor Rf1, the first output end of the differential amplifier A1 is further connected with the positive-phase input end of a comparator A2, the positive-phase input end of the differential amplifier A1 is another input end of the transimpedance amplifier TIA, the positive-phase input end of the differential amplifier A1 is connected with a reference current output end and is also connected with the second output end of the differential amplifier A1 through a second resistor Rf2, the second output end of the differential amplifier A1 is further connected with the inverting input end of the comparator A2, and the output end of the comparator A2 is connected with the input end of the booster circuit 20.
Optionally, two ends of the first resistor Rf1 are connected in parallel to a first capacitor Cf1, and two ends of the second resistor Rf2 are connected in parallel to a second capacitor Cf2, where the first capacitor Cf1 and the second capacitor Cf2 are both filter capacitors for filtering out noise, so that the differential amplifier A1 can reliably operate.
Specifically, the sampling current Is and the reference current Iref are amplified by the differential amplifier A1 to generate a voltage V1 and a voltage V2, respectively, where V1= Is Rf1 and V2= Iref Rf2, and since Rf1= Rf2= R, V1= Is R and V2= Iref R, and V1 and V2 generate a high level or a low level Vout after passing through the comparator A2.
Further, the voltage boost circuit 20 includes a charge pump (not shown in the figure), when the transimpedance amplifier TIA outputs a high level, the charge pump boosts the output voltage to boost the driving voltage of the photodetector array 30, at which time the sampling current is correspondingly increased until the sampling current is greater than or equal to the reference current, so that the HVOUT voltage is greater than the VDB voltage.
For example, the function of the charge pump is to raise the supply voltage 3.3V to 27V-29V,27V-29V corresponding to temperatures of-40 ℃ to 85 ℃. At the normal temperature of 40 ℃, the corresponding voltage is 28v; when the temperature rises to 85 ℃, the output voltage of the charge pump is 29V, when the temperature drops to-40 ℃, the output voltage of the charge pump is 27V, and when the temperature changes, the voltage of HVOUT is adjusted at any time so as to ensure that the current generated during the avalanche breakdown of the SPAD can be stabilized near the reference current IREF.
The invention also provides a laser ranging chip, which comprises a self-adaptive adjusting circuit and at least one light detector array, wherein the output end of the self-adaptive adjusting circuit is connected with the cathode of the light detector array and is used for the voltage of the light detector array, so that the light detector array is in an avalanche state.
In summary, the current sampling module samples the current flowing through the SPAD, compares the current with the reference current to determine the boosted voltage of the booster circuit, manually adjusts the temperature coefficient of the breakdown voltage of the SPAD, saves the CP test cost, and can generate the breakdown voltage required by the SPAD at any temperature, thereby ensuring the light sensing capability and the detection accuracy of the photoelectric detector array. In addition, the invention simplifies the circuit structure of the self-adaptive adjusting circuit, and synchronously reduces the hardware cost.
It should be understood that equivalents and modifications to the invention as described herein may occur to those skilled in the art, and all such modifications and alterations are intended to fall within the scope of the appended claims.
Claims (10)
1. An adaptive adjustment circuit for a photodetector, comprising:
the current sampling module is used for acquiring the output current of the light detector array;
the trans-impedance amplifier is used for comparing the output current with a reference current and outputting a corresponding voltage regulating signal according to a comparison result;
and the voltage boosting circuit is used for adjusting the driving voltage of the photodetector array according to the voltage adjusting signal so as to enable the photodetector array to be in an avalanche breakdown state.
2. The adaptive photo-detector tuning circuit of claim 1, wherein the reference current is a current at which the photo-detector array breaks down, and the reference current does not vary with temperature.
3. The adaptive dimming circuit for a photo-detector according to claim 1, wherein the current sampling module is specifically configured to obtain a current average of output currents of the photo-detector array and output the current average to the transimpedance amplifier.
4. The adaptive adjusting circuit of the optical detector according to claim 3, wherein the current sampling module comprises a current mirror, an input terminal of the current mirror is connected to the anode of the optical detector array, and an output terminal of the current mirror is connected to an input terminal of the transimpedance amplifier.
5. The adaptive photo-detector tuning circuit of claim 3, wherein the current mirror comprises: the high-precision photoelectric detector comprises a first MOS tube and a second MOS tube, wherein the drain electrode of the first MOS tube is connected with the anode of the photodetector array, the grid electrode of the first MOS tube and the grid electrode of the second MOS tube, the source electrode of the first MOS tube and the source electrode of the second MOS tube are grounded, the drain electrode of the second MOS tube is connected with one input end of a transimpedance amplifier, the other input end of the transimpedance amplifier is connected with a reference current output end, and the output end of the transimpedance amplifier is connected with a booster circuit.
6. The adaptive light-detector adjusting circuit according to claim 5, wherein the width-to-length ratio of the first MOS transistor is n times larger than the width-to-length ratio of the second MOS transistor.
7. The adaptive light detector adjusting circuit according to claim 5,
the transimpedance amplifier includes: the differential amplifier comprises a differential amplifier, a comparator, a first resistor and a second resistor, wherein the inverting input end of the differential amplifier is an input end of a transimpedance amplifier, the inverting input end of the differential amplifier is connected with the drain electrode of a second MOS tube and a first output end of the differential amplifier through the first resistor, the first output end of the differential amplifier is also connected with the positive phase input end of the comparator, the positive phase input end of the differential amplifier is another input end of the transimpedance amplifier, the positive phase input end of the differential amplifier is connected with a reference current output end and a second output end of the differential amplifier through the second resistor, the second output end of the differential amplifier is also connected with the inverting input end of the comparator, and the output end of the comparator is connected with the input end of a boosting circuit.
8. The adaptive photo-detector tuning circuit of claim 5, wherein the first resistor and the second resistor have the same resistance.
9. The adaptive photo-detector adjusting circuit of claim 1, wherein the voltage boosting circuit comprises a charge pump, and when the transimpedance amplifier outputs a high level, the charge pump boosts the output voltage to boost the driving voltage of the photo-detector array until the sampling current is greater than or equal to the reference current.
10. A laser ranging chip comprising at least one photodetector array, characterized in that it further comprises an adaptive tuning circuit according to claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211227389.4A CN115963374A (en) | 2022-10-08 | 2022-10-08 | Self-adaptive adjusting circuit and laser ranging chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211227389.4A CN115963374A (en) | 2022-10-08 | 2022-10-08 | Self-adaptive adjusting circuit and laser ranging chip |
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| CN115963374A true CN115963374A (en) | 2023-04-14 |
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| CN202211227389.4A Pending CN115963374A (en) | 2022-10-08 | 2022-10-08 | Self-adaptive adjusting circuit and laser ranging chip |
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