CN115956845A - Cleaning method and cleaning apparatus - Google Patents

Cleaning method and cleaning apparatus Download PDF

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Publication number
CN115956845A
CN115956845A CN202211635482.9A CN202211635482A CN115956845A CN 115956845 A CN115956845 A CN 115956845A CN 202211635482 A CN202211635482 A CN 202211635482A CN 115956845 A CN115956845 A CN 115956845A
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China
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pressure sensor
thin film
voltage
film resistance
sensitivity
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CN202211635482.9A
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Chinese (zh)
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张能锋
刘伟
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Chengdu Lianzhou International Technology Co ltd
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Chengdu Lianzhou International Technology Co ltd
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Priority to CN202211635482.9A priority Critical patent/CN115956845A/en
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Abstract

The application provides a cleaning method and a cleaning device, wherein the cleaning method is applied to the cleaning device, the cleaning device comprises a film resistance pressure sensor, a voltage division circuit connected with the film resistance pressure sensor, and a processing unit connected with the voltage division circuit, and the method comprises the following steps: the film resistance pressure sensor receives the impact of the dirt particles at the current position and outputs a resistance signal corresponding to the resistance value according to the impact strength; the voltage division circuit converts a resistance signal output by the film resistance pressure sensor at the current position into a voltage signal; the processing unit determines the contamination condition of the current position based on the voltage signal. When cleaning like this, on the one hand, the installation of film resistance pressure sensor is simple, and on the other hand, film resistance pressure sensor is insensitive to cleaning equipment's fuselage vibration, and voltage signal also can reflect the size of dirty granule impact more accurately, and then improves the accuracy that dirty detected.

Description

Cleaning method and cleaning apparatus
Technical Field
The embodiment of the application relates to the technical field of intelligent equipment, in particular to a cleaning method and cleaning equipment.
Background
With the development of technology, cleaning equipment is more and more widely applied in life. The existing cleaning equipment is generally provided with a piezoelectric sensor connected with a signal processing circuit in an air duct, when dirt enters the cleaning equipment and then impacts on the piezoelectric sensor, a corresponding voltage pulse signal is generated, when the voltage pulse signal reaches a certain amplitude, a pulse indicating signal is output to a processor, and the processor judges the dirt condition based on the information of the pulse indicating signal.
However, the signal processing circuit corresponding to the existing cleaning device has a complex functional structure, high cost, high development difficulty, and high requirement on structural damping design, and if the damping effect is not ideal, the accuracy of dirt detection is affected; in addition, the service life of the piezoelectric sensor is short, and the shape and the size of the piezoelectric sensor are limited to a certain extent, so that the piezoelectric sensor cannot be optimized correspondingly according to the air duct and the layout position of the cleaning equipment.
Disclosure of Invention
The embodiment of the application provides a cleaning method and cleaning equipment, which can simply and accurately detect the dirt condition.
In a first aspect, an embodiment of the present application provides a cleaning method, which is applied to a cleaning device including a thin film resistance pressure sensor, a voltage dividing circuit connected to the thin film resistance pressure sensor, and a processing unit connected to the voltage dividing circuit, and the method includes:
the film resistor pressure sensor receives the impact of the dirt particles at the current position and outputs a resistor signal with a corresponding resistance value according to the impact strength;
the voltage division circuit converts a resistance signal output by the thin film resistance pressure sensor at the current position into a voltage signal;
the processing unit determines the contamination condition of the current position based on the voltage signal.
In a second aspect, an embodiment of the present application provides a cleaning apparatus, which includes a thin film resistance pressure sensor, a voltage dividing circuit connected to the thin film resistance pressure sensor, and a processing unit connected to the voltage dividing circuit;
the film resistance pressure sensor is used for receiving the impact of the dirt particles at the current position and outputting a resistance signal corresponding to the resistance value according to the impact strength;
the voltage division circuit is used for converting a resistance signal output by the film resistance pressure sensor at the current position into a voltage signal;
and the processing unit is used for determining the pollution condition of the current position based on the voltage signal.
In summary, the present application provides a cleaning method and a cleaning apparatus, wherein the cleaning method is applied to the cleaning apparatus, the cleaning apparatus includes a thin film resistance pressure sensor, a voltage dividing circuit connected to the thin film resistance pressure sensor, and a processing unit connected to the voltage dividing circuit, the method includes: the film resistance pressure sensor receives the impact of the dirt particles at the current position and outputs a resistance signal corresponding to the resistance value according to the impact strength; the voltage division circuit converts a resistance signal output by the film resistance pressure sensor at the current position into a voltage signal; the processing unit determines the contamination condition of the current position based on the voltage signal. Through the technical scheme of this application, when cleaning, when installing film resistance pressure sensor on cleaning device, film resistance pressure sensor can directly paste in cleaning device's wind channel, and its size, shape and overall arrangement position all can carry out adaptability ground adjustment according to cleaning device's wind channel shape, size and overall arrangement. In addition, the film resistance pressure sensor is insensitive to vibration of the cleaning equipment body, so that on one hand, no extra damping structure is needed to be added when the film resistance pressure sensor is installed, the installation is convenient, on the other hand, the change of the resistance value of the film resistance pressure sensor is not influenced by the vibration of the cleaning equipment body, the voltage signal can more accurately reflect the impact force of dirt particles, and the dirt condition obtained by analyzing the voltage signal by the processing unit is more accurate; meanwhile, the film resistor pressure sensor cannot generate low-frequency noise due to vibration of the cleaning equipment body, so that signals for filtering the low-frequency noise can be omitted when voltage signals are processed, and the signal processing process is simpler and more efficient.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic view of a prior art cleaning apparatus;
FIG. 2 is a schematic diagram of a conventional signal processing circuit;
FIG. 3 is a schematic diagram of a piezoelectric transducer;
FIG. 4 is a schematic system diagram of a cleaning apparatus according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a thin film resistive pressure sensor according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram illustrating a signal processing circuit according to an embodiment of the present disclosure;
fig. 7 is a specific circuit structure diagram of a signal processing circuit according to an embodiment of the present disclosure;
FIG. 8 is a schematic flow chart of a cleaning method provided by an embodiment of the present application;
fig. 9 is a schematic structural diagram of a matrix type thin film resistor pressure sensor according to an embodiment of the present disclosure;
fig. 10 is a schematic structural diagram of another matrix type thin film resistor pressure sensor according to an embodiment of the present application;
fig. 11 is a schematic diagram of response relationships when sensors with different sensitivities are triggered according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The cleaning method provided by the embodiment of the application can be applied to any field needing cleaning.
The following is a description of the prior art cleaning scheme.
Fig. 1 is a schematic structural view of a conventional cleaning apparatus.
As shown in fig. 1, a piezoelectric sensor is installed in an air duct of a conventional cleaning device, and the piezoelectric sensor is connected to a signal processing circuit, which is connected to a processor. When dirt is sucked by a fan of the cleaning equipment and is hit on the sensor, the signal processing circuit generates a corresponding dirt indicating signal, and the processor analyzes the dirt indicating signal to obtain the dirt condition of the current position.
However, on the one hand, piezoelectric sensors are sensitive to vibrations of the cleaning device itself, which can generate noise due to vibrations of the body of the cleaning device. When the piezoelectric sensor responds to the impact of the dirt particles, the generated response signal carries low-frequency noise components, so that an additional circuit module is needed in the subsequent design of a signal processing circuit to filter the noise components in the response signal.
Fig. 2 is a schematic diagram of a conventional signal processing circuit.
As shown in fig. 2, the output terminal of the piezoelectric transducer is connected to the input terminal of an acoustic vibration filter or an RFI (Radio Frequency Interference) filter, the output terminal of the filter is connected to the input terminal of a signal amplifier, the output terminals of the signal amplifier are respectively connected to the input terminal of an attenuator and the input terminal of a reference level generating circuit, the output terminals of the attenuator and the reference level generating circuit are respectively connected to the input terminal of a comparator, and the output terminal of the comparator is connected to a pulse stretching circuit.
The signal processing circuit part needs to filter low-frequency noise and external radio frequency high-frequency noise caused by vibration of the machine body and the like through a filter; the signal after noise filtering is subjected to signal amplification through a signal amplifier, part of the amplified signal is subjected to voltage division and attenuation and then is input into a comparator, and part of the amplified signal generates a reference level through a reference level generating circuit. When dirt impacts the piezoelectric sensor, if the amplitude of the generated pulse signal is large enough and larger than the reference level even after partial pressure attenuation, the comparator generates a corresponding dirt indicating pulse signal, the pulse broadening circuit broadens the pulse of the dirt indicating pulse signal and outputs the pulse broadening signal to the processor, and the processor determines the dirt condition of the current position based on the broadened pulse indicating signal.
On the other hand, in order to reduce the influence of the vibration of the cleaning device body on the dirt detection accuracy to a certain extent, an additional damping device needs to be added when the piezoelectric sensor is installed. In general, a certain space is required to be left around the piezoelectric transducer to mount components such as a housing for fixing the piezoelectric transducer, a damping silicone, and a driving plate.
Fig. 3 is a schematic structural diagram of a piezoelectric sensor.
As shown in fig. 3, the piezoelectric sensor includes a shield case, a PCB (Printed Circuit Board), a plastic case, a piezoelectric sheet, a rubber ring, and a fixing screw.
It can be seen that the piezoelectric sensor has high structural damping design requirements, the overall structural design and assembly process are complex, and the difficulty and cost are high when cleaning or detecting dirt.
In addition, the piezoelectric type sensor usually adopts a brass metal disc as a substrate, has certain limitation on shape and size, cannot be optimally adjusted according to the shapes and the layouts of air ducts of different cleaning devices, and is high in cost and short in service life.
In order to solve the above technical problem, an embodiment of the present application provides a cleaning method and a cleaning apparatus, wherein the cleaning method is applied to the cleaning apparatus, the cleaning apparatus includes a thin film resistance pressure sensor, a voltage dividing circuit connected to the thin film resistance pressure sensor, and a processing unit connected to the voltage dividing circuit, the method includes: the film resistance pressure sensor receives the impact of the dirt particles at the current position and outputs a resistance signal corresponding to the resistance value according to the impact strength; the voltage division circuit converts a resistance signal output by the thin film resistance pressure sensor at the current position into a voltage signal; the processing unit determines the contamination condition of the current position based on the voltage signal. Through the technical scheme of this application, when cleaning, when installing film resistance pressure sensor on cleaning device, film resistance pressure sensor can directly paste in cleaning device's wind channel, and its size, shape and overall arrangement position all can carry out adaptability ground adjustment according to cleaning device's wind channel shape, size and overall arrangement. In addition, the film resistance pressure sensor is insensitive to vibration of the cleaning equipment body, so that on one hand, no extra damping structure is needed to be added when the film resistance pressure sensor is installed, the installation is convenient, on the other hand, the change of the resistance value of the film resistance pressure sensor is not influenced by the vibration of the cleaning equipment body, the voltage signal can more accurately reflect the impact force of dirt particles, and the dirt condition obtained by analyzing the voltage signal by the processing unit is more accurate; meanwhile, the film resistor pressure sensor cannot generate low-frequency noise due to vibration of the cleaning equipment body, so that signals for filtering the low-frequency noise can be omitted when voltage signals are processed, and the signal processing process is simpler and more efficient.
The technical solutions of the embodiments of the present application are described in detail below with reference to some embodiments. The following several embodiments may be combined with each other and may not be described in detail in some embodiments for the same or similar concepts or processes.
Fig. 4 is a schematic system structure diagram of a cleaning apparatus according to an embodiment of the present application.
As shown in fig. 4, a cleaning apparatus includes a thin film resistance pressure sensor, a voltage dividing circuit connected to the thin film resistance pressure sensor, and a processing unit connected to the voltage dividing circuit;
the film resistance pressure sensor is used for receiving the impact of the dirt particles at the current position and outputting a resistance signal corresponding to the resistance value according to the impact strength;
the voltage division circuit is used for converting a resistance signal output by the film resistance pressure sensor at the current position into a voltage signal;
and the processing unit is used for determining the pollution condition of the current position based on the voltage signal.
It should be noted that, when dirt particles enter the air duct of the cleaning device and impact on the thin film resistance pressure sensor (referred to as a sensor for short), the thin film resistance pressure sensor converts a physical quantity (pressure) into a resistance change, and the resistance value of the thin film resistance pressure sensor changes in proportion to the change of the impact force, so as to reflect the pressure value borne by the sensor. When the pressure is 0, the resistance value is maximum; the larger the pressure is, the smaller the resistance is; the resistance change is converted into voltage change through a voltage division circuit; thus, information about the impact force can be obtained based on the voltage change, and further information about the dirt particles can be obtained.
The dirty particles according to the embodiments of the present disclosure may be any particles such as dust particles, small debris, etc. that can be sucked into the air duct of the cleaning device.
Fig. 5 is a schematic structural diagram of a thin film resistor pressure sensor according to an embodiment of the present disclosure.
As shown in fig. 5, the thin film resistive pressure sensor includes two layers of substrates made of flexible Polymer (PET), wherein one layer of the substrates is printed with conductive pressure sensitive ink, and the other layer of the substrates is printed with a set of interdigitated silver combined electrodes. The two substrates are placed opposite each other with an annular gasket with adhesive in between. When pressure is applied to the surface of the substrate, the silver electrode is contacted with the conductive ink to generate contact resistance. The larger the force applied, the smaller the resistance of the pressure-sensitive ink, and the larger the contact area between the electrode and the conductive ink is, which means that a plurality of contact resistors are connected in parallel, and the smaller the resistance presented by the thin film resistor pressure sensor is.
When the rear stage of the film resistance pressure sensor is connected with a voltage division circuit, the pressure signal can be converted into a voltage signal, so that the impact of dirt particles is detected.
When installing film resistance pressure sensor, the sensor of taking the gum can directly paste in cleaning device's wind channel, and its overall arrangement position can be adjusted by oneself according to cleaning device's wind channel shape, and simultaneously, film resistance pressure sensor easily customizes different shape size to adapt to the wind channel demand of different size of a dimension.
The thin film resistance pressure sensor changes the relative position of the upper substrate and the lower substrate (the distance between the upper substrate and the lower substrate is changed) through collision and extrusion, and then the change of the resistance value is influenced. Therefore, the change of the resistance value cannot be influenced by the integral vibration of the film resistance pressure sensor, the film resistance pressure sensor is insensitive to the vibration of the cleaning equipment body, an extra damping structure is not needed to be designed, the structural design of the cleaning equipment is simplified, meanwhile, the voltage signal can more accurately reflect the impact force of dirt particles, and the dirt condition obtained by the processing unit based on the voltage signal analysis is more accurate.
In some embodiments, the thin film resistive pressure sensor is a single thin film resistive pressure sensor.
In this possible implementation manner, the processing unit includes a signal processing circuit and a processor, wherein an input terminal of the signal processing circuit is connected to an output terminal of the voltage dividing circuit, and an output terminal of the signal processing circuit is connected to the processor.
The signal processing circuit is used for converting the voltage signal into a first pulse signal;
and the processor is used for determining the pollution condition of the current position based on the width of the first pulse signal.
The circuit module included in the signal processing circuit is not particularly limited in the embodiments of the present application.
Fig. 6 is a schematic configuration diagram of a signal processing circuit according to an embodiment of the present disclosure.
As shown in fig. 6, the signal processing circuit includes: the circuit comprises a filter circuit, a half-wave peak value detection circuit and a comparison circuit.
And the filter circuit is used for filtering high-frequency noise in the voltage signal.
When cleaning device during operation, bluetooth on the equipment, during WIFI (wireless network communication technology) connect, can produce radiofrequency signal interference, the radiofrequency interference that produces through other equipment of filter circuit filtering in this application embodiment to promote dirty accuracy that detects.
The half-wave peak detection circuit is used for converting the output signal of the filter circuit into a second pulse signal;
and the comparison circuit is used for generating a first pulse signal when detecting that the voltage value of the second pulse signal is greater than the reference voltage, and outputting the first pulse signal to the processor.
In one possible implementation, the specific circuit structure of the signal processing circuit is shown in fig. 7.
In this possible implementation, a voltage dividing circuit is formed by the power supply, the sensor and the voltage dividing resistor, and the output end of the voltage dividing circuit is connected with the filter circuit.
One end of the sensor (rheostat R1) is connected with a power supply, the other end of the sensor is connected with one end of the divider resistor R2, and the other end of the divider resistor R2 is grounded.
When dirty particles impact the sensor, the larger the impact force is, the smaller the resistance value of the sensor is, and the larger the voltage at the two ends of the divider resistor R2 is.
A filter circuit is formed by the resistor R3 and the capacitor C1, and the output end of the filter circuit is connected with the half-wave peak value detection circuit.
One end of the resistor R3 is connected to the output end of the voltage division circuit, the other end of the resistor R3 is connected with one end of the capacitor C1, and the other end of the capacitor C1 is grounded.
For high frequency signals, the capacitive reactance of the capacitor is small, forming a path. Therefore, the capacitor C1 can absorb radio frequency high frequency noise in the voltage signal to achieve a filtering effect.
A half-wave peak value detection circuit is formed by the diode D1, the resistor R4 and the capacitor C2, and the output end of the half-wave peak value detection circuit is connected with the input end of the comparator.
One end of the diode D1 is connected with the capacitor C1, the other end of the diode D1 is respectively connected with one end of the resistor R4 and one end of the capacitor C2, and the other ends of the resistor R4 and the capacitor C2 are grounded.
When dirty granule strikes the sensor, correspond different impact according to dirty granule size, also correspond different trigger resistance, at this moment, half-wave peak detection circuit can produce the positive pulse of a different amplitude.
When dirt particles impact the sensor, a signal is at a rising edge, the voltage at the left end of the diode is larger than that at the right end of the diode, the diode is conducted, and the C2 is rapidly charged through the R3 and the D1 to reach a pulse peak value; when dirt particles are carried away from the sensor by the suction created by the fan, the pulse signal begins to decay, at which time diode D1 is turned off and C2 slowly discharges through R4. According to different trigger resistance values and different pulse peak values, the half-wave peak value detection circuit can generate positive pulses with different amplitudes, correspondingly, the discharge time length of C2 is different, and the pulse attenuation time length is different.
The comparator circuit is formed by a comparator, as shown in fig. 7, one input end of the comparator is connected with the output end of the half-wave peak detection circuit, and the other input end of the comparator is connected with a reference voltage V ref
When the comparator detects that the voltage of the output signal of the half-wave peak detection circuit is greater than the reference voltage V ref When the first pulse signal is generated, a high level is output to form a first pulse signal.
It should be noted that the reference voltage V ref Can be optimized and adjusted according to the dirt detection requirement. For example, when the cleaning device only detects larger dirt particles, the reference voltage may be adjusted larger because the larger dirt particles correspond to larger signal peaks. When the cleaning device needs to detect smaller dirt particles, the reference voltage can be adjusted to be smaller so as to improve the sensitivity of dirt detection.
The working principle of the signal processing circuit is that when dirt particles impact the sensor, the signal is at a rising edge, the voltage at the left end of the diode is larger than that at the right end of the diode, the diode is conducted, and the C8 is rapidly charged through R14 and D6 to reach a pulse peak value. When dirt particles are brought away from the sensor by suction force generated by the fan, the pulse signal starts to be attenuated, the diode D6 is cut off, the C8 discharges slowly through the R15, at the moment, the time length of the signal attenuated to the reference voltage Vref is different according to the pulse amplitude, therefore, the pulse widening lengths shaped through the comparator are different, the processor can identify the dirt through the existence of the pulse output by the comparator, and identify the size of the impact particles through the width of the pulse output by the comparator.
The processor may further determine a dirt concentration position according to the presence or absence and the width of the first pulse signal, and further adjust a cleaning strategy of the cleaning device. For example, when the cleaning device sweeps from the C position to the D position, if it is detected that the pulse width of the D position is greater than that of the C position, the suction force position of the cleaning device may be increased.
In some embodiments, the signal processing circuit comprises: the pulse broadening circuit comprises a filter circuit, a half-wave peak value detection circuit, a comparison circuit and a pulse broadening circuit;
the filter circuit is used for filtering high-frequency noise in the voltage signal;
the half-wave peak value detection circuit is used for converting the output signal of the filter circuit into a second pulse signal;
the comparison circuit is used for generating a first pulse signal when detecting that the voltage value of the second pulse signal is greater than a reference voltage;
and the pulse stretching circuit is used for increasing the width of the first pulse signal and outputting the stretched first pulse signal to the processor.
If the dirt particles are very small, when the dirt particles impact the film resistance pressure sensor, the generated impact force is very small, the resistance of the film resistance pressure sensor can only change slightly, the voltage divided by the voltage dividing resistor in the voltage dividing circuit is too small, so that the first pulse signal output after the voltage signal is processed by the signal processing circuit is too narrow, and the processor cannot identify the impact of the dirt particles. In the embodiment of the application, the pulse widening circuit is connected to the rear stage of the comparator to widen the width of the first pulse signal, so that when the cleaning equipment works, even if the cleaning equipment is extremely small dirt particles, the processor can also detect the dirt particles, and the sensitivity of dirt detection of the cleaning equipment is further improved.
As described above, according to the technical scheme of the application, when the film resistance pressure sensor is adopted, the film resistance pressure sensor is insensitive to the vibration of the cleaning equipment, and low-frequency noise cannot be generated due to the vibration of the cleaning equipment, so that a circuit for filtering the low-frequency noise is omitted when signal processing is carried out, the structure of a signal processing circuit is simplified, and the circuit design is facilitated. In addition, compared with the existing signal processing circuit, the signal processing circuit has the advantages that the signal amplifier and the attenuator are omitted, and the signal processing can be realized through the filter circuit, the half-wave peak value detection circuit and the comparator.
It should be noted that, in the embodiment of the present application, the processor may also count the number of times that the thin film resistance pressure sensor is triggered within a preset time period. The processor determines the concentrated position of the dirt and which time period is more dirty by comparing the triggering times of the film resistance pressure sensor at different positions and different time periods in a preset time period. For example, when the processor detects that the cleaning device is at the cleaning a position, the number of times that the thin film resistance pressure sensor is triggered in the preset time period is greater than that when the cleaning device is at the cleaning B position, and the number of times that the thin film resistance pressure sensor is triggered in the preset time period, it is determined that the a position is a dirt concentration position compared with the B position. The processor may further adjust the cleaning strategy based on the analysis of the dirt concentration location, for example, when the processor determines that the position a is the dirt concentration location compared to the position B, the processor may increase the suction gear of the cleaning device when the cleaning device is at the cleaning position a.
In some embodiments, the thin film resistance pressure sensors are matrix thin film resistance pressure sensors, and the sensitivity of each thin film resistance pressure sensor in the matrix thin film resistance pressure sensors is the same.
In this possible implementation, the processing unit includes a processor.
The processor is used for determining the reference voltage corresponding to the current position of the thin film resistance pressure sensor aiming at each triggered thin film resistance pressure sensor in the matrix type thin film resistance pressure sensor; for each triggered film resistance pressure sensor, determining a calibration voltage corresponding to the film resistance pressure sensor based on a voltage value corresponding to the current position of the film resistance pressure sensor and a reference voltage corresponding to the film resistance pressure sensor; and further determining the pollution condition of the current position based on the calibration voltage corresponding to each triggered thin film resistance pressure sensor.
In some embodiments, the processor is specifically configured to, for each triggered thin film resistive pressure sensor of the matrix type thin film resistive pressure sensors, acquire a voltage value corresponding to the thin film resistive pressure sensor when there is no dirt particle at the current position, and determine the voltage value as a reference voltage corresponding to the thin film resistive pressure sensor at the current position.
In some embodiments, the processor is specifically configured to determine a difference between a voltage value corresponding to the thin film resistance pressure sensor and a reference voltage corresponding to the thin film resistance pressure sensor as the calibration voltage corresponding to the thin film resistance pressure sensor.
In some embodiments, the matrix type thin film resistance pressure sensor comprises M zones, where M is a positive integer greater than or equal to 2, and the processor is further configured to determine the cleaning strategy based on the number of times the thin film resistance pressure sensor of each of the M zones is triggered and/or a calibration voltage corresponding to the thin film resistance pressure sensor triggered in each of the M zones.
In some embodiments, the thin film resistance pressure sensors are matrix thin film resistance pressure sensors, and the sensitivity of each thin film resistance pressure sensor in the matrix thin film resistance pressure sensors is the same.
In this possible implementation, the processing unit includes a processor.
The processor determines the number of triggered thin film resistance pressure sensors based on the voltage signal corresponding to each thin film resistance pressure sensor in the matrix type thin film resistance pressure sensors, and determines the pollution condition of the current position based on the number of triggered thin film resistance pressure sensors.
In some embodiments, the thin film resistance pressure sensor is a matrix thin film resistance pressure sensor, and the matrix thin film resistance pressure sensor includes thin film resistance pressure sensors with N sensitivities, where the thin film resistance pressure sensors with N sensitivities are used for detecting N dirt particles with different sizes, and N is a positive integer greater than or equal to 2.
In this possible implementation, the processing unit includes a processor.
The processor is used for determining a voltage value and a conversion coefficient corresponding to the thin film resistor pressure sensor with each of the N sensitivities and the number of triggered times in a preset time period based on the voltage signal; determining voltage components of N kinds of dirt particles at the current position under each sensitivity based on a conversion coefficient and a voltage value corresponding to the thin film resistance pressure sensor of each sensitivity in the N kinds of sensitivities; determining a voltage value corresponding to each of the N kinds of dirt particles at the current position based on the voltage components of the N kinds of dirt particles under each sensitivity and the number of times of triggering within a preset time; and then determining the pollution condition of the current position based on the voltage value corresponding to each pollution particle.
In some embodiments, the processor is specifically configured to determine, for an ith dirt particle of the N kinds of dirt particles, a product of a voltage component of the ith dirt particle at a jth sensitivity of the N kinds of sensitivities and a number of times that the thin film resistance pressure sensor of the jth sensitivity is triggered within a preset time as a voltage value corresponding to the ith dirt particle at the jth sensitivity, and for the ith dirt particle of the N kinds of dirt particles, add the voltage values corresponding to the ith dirt particle at the N kinds of sensitivities to obtain a first value, and determine the first value as the voltage value corresponding to the ith dirt particle, where i is a positive integer from 1 to N, and j is a positive integer from 1 to N.
In some embodiments, N is equal to 2, and the matrix-type thin-film resistive pressure sensor includes a high-sensitivity thin-film resistive pressure sensor for detecting large and small dirt particles, and a low-sensitivity thin-film resistive pressure sensor for detecting large dirt particles.
In this possible implementation manner, the processor is configured to determine an impact force corresponding to the large dirt particles based on the voltage value and the conversion coefficient corresponding to the low-sensitivity thin-film resistive pressure sensor, and determine the voltage value corresponding to the low-sensitivity thin-film resistive pressure sensor as a voltage component corresponding to the large dirt particles under the low-sensitivity thin-film resistive pressure sensor; and determining the voltage component corresponding to the small dirty particles under the high-sensitivity thin-film resistance pressure sensor and the voltage component corresponding to the large dirty particles under the high-sensitivity thin-film resistance pressure sensor based on the impact force corresponding to the large dirty particles, the voltage value corresponding to the high-sensitivity thin-film resistance pressure sensor and the conversion coefficient.
In some embodiments, the processor is specifically configured to determine a ratio of a voltage value corresponding to the low-sensitivity thin-film resistive pressure sensor to a conversion factor corresponding to the low-sensitivity thin-film resistive pressure sensor as the impact force corresponding to the large dirt particles.
In some embodiments, the processor is specifically configured to multiply a conversion coefficient corresponding to the high-sensitivity thin film resistive pressure sensor by an impact force corresponding to the large dirt particles to obtain a first product, and determine the first product as a voltage component corresponding to the large dirt particles under the high-sensitivity thin film resistive pressure sensor; and determining the difference value between the voltage value corresponding to the high-sensitivity thin film resistance pressure sensor and the first product as the voltage component corresponding to the small dirt particles under the high-sensitivity thin film resistance pressure sensor.
In summary, the present application provides a cleaning device, which includes a thin film resistor pressure sensor, a voltage dividing circuit connected to the thin film resistor pressure sensor, and a processing unit connected to the voltage dividing circuit, wherein the thin film resistor pressure sensor is configured to receive an impact of a dirt particle at a current position, and output a resistance signal corresponding to a resistance value according to a magnitude of an impact strength; the voltage division circuit is used for converting a resistance signal output by the thin film resistance pressure sensor at the current position into a voltage signal; and the processing unit is used for determining the pollution condition of the current position based on the voltage signal. Through the technical scheme of this application, when cleaning, when installing film resistance pressure sensor on cleaning device, film resistance pressure sensor can directly paste in cleaning device's wind channel, and its size, shape and overall arrangement position all can carry out adaptability ground adjustment according to cleaning device's wind channel shape, size and overall arrangement. In addition, the film resistance pressure sensor is insensitive to the vibration of the cleaning equipment body, so that on one hand, the film resistance pressure sensor does not need to be additionally provided with a damping structure during installation, the installation is convenient, on the other hand, the change of the resistance value of the film resistance pressure sensor is not influenced by the vibration of the cleaning equipment body, the voltage signal can more accurately reflect the impact force of dirt particles, and the dirt condition obtained by the processing unit based on the voltage signal analysis is more accurate; meanwhile, the film resistor pressure sensor cannot generate low-frequency noise due to vibration of the cleaning equipment body, so that signals for filtering the low-frequency noise can be omitted when voltage signals are processed, and the signal processing process is simpler and more efficient.
Fig. 8 is a schematic flow chart of a cleaning method according to an embodiment of the present disclosure.
As shown in fig. 8, the cleaning method is applied to a cleaning apparatus including a sheet resistance pressure sensor, a voltage dividing circuit connected to the sheet resistance pressure sensor, and a processing unit connected to the voltage dividing circuit, the method including the steps of S101 to S103:
s101: the film resistance pressure sensor receives the impact of the dirt particles at the current position and outputs a resistance signal corresponding to the resistance value according to the impact strength;
s102: the voltage division circuit converts a resistance signal output by the thin film resistance pressure sensor at the current position into a voltage signal;
s103: the processing unit determines the contamination condition of the current position based on the voltage signal.
In some embodiments, the thin film resistive pressure sensor is a single thin film resistive pressure sensor.
In this possible implementation manner, the processing unit includes a signal processing circuit and a processor, wherein an output terminal of the voltage dividing circuit is connected to an input terminal of the signal processing circuit, and an output terminal of the signal processing circuit is connected to the processor.
The signal processing circuit converts voltage signals at two ends of a voltage dividing resistor in the voltage dividing circuit into first pulse signals and outputs the first pulse signals to the processor; the processor determines a dirty condition of the current position based on the width of the first pulse signal.
In some embodiments, the thin film resistive pressure sensor is a matrix thin film resistive pressure sensor. The matrix type thin film resistor pressure sensor comprises G induction points (each induction point corresponds to one sensor), the G induction points are all used for inducing impact of dirt particles, and resistance signals with different resistance values are formed according to the impact force, wherein the sensitivity of each induction point on the matrix type thin film resistor pressure sensor is the same, and G is a positive integer greater than or equal to 2.
Fig. 9 is a schematic structural diagram of a matrix type thin film resistor pressure sensor according to an embodiment of the present disclosure.
As shown in fig. 9, a plurality of thin film resistive pressure sensors are arranged in a matrix, each having its own column and row information.
It should be noted that, in the embodiments of the present application, the number of sensors included in the matrix type thin film resistance pressure sensor and the arrangement form of the sensors are not particularly limited. The number and arrangement of the particles can be optimally adjusted according to the size of the dirt particles to be detected by the cleaning device. For example, when the cleaning device detects small dirt particles, the surface area of each sensor may be reduced, or the sensors may be arranged closely; when the cleaning apparatus detects relatively large dirt particles, the surface area of each sensor can be increased appropriately, and the distance between the sensors can be adjusted larger appropriately.
In this possible implementation, the processing unit includes a processor.
The above-described S103 determines the contamination condition of the current position mainly based on the following steps S103-A1 to S103-A3.
S103-A1: the processor determines a reference voltage corresponding to the current position of the film resistance pressure sensor for each triggered film resistance pressure sensor in the matrix film resistance pressure sensors.
Considering that the existence of wind pressure detects the influence of accuracy to the dirt, in this application embodiment, need calibrate the voltage signal of gathering to promote the accuracy that the dirt detected.
When voltage is calibrated, a reference voltage is obtained at first, and when the reference voltage is used for indicating that only wind pressure exists at the current position, the voltages at the two ends of the voltage dividing resistor in the voltage dividing circuit are obtained.
The embodiment of the present application does not specifically limit the manner of obtaining the reference voltage.
Mode 1, in an environment without dirt particles, the cleaning apparatus is started, and at this time, a voltage across the voltage-dividing resistor is acquired and taken as a reference voltage.
In the mode 2, the same dirt particles impact the sensor in the windless environment and the windless environment at the same time, the voltages at two ends of the divider resistor in the two environments are respectively obtained, and the difference value of the voltages at two ends of the divider resistor in the two environments is determined as the reference voltage.
S103-A2: the processor determines a calibration voltage corresponding to the thin film resistance pressure sensor based on a voltage value corresponding to the thin film resistance pressure sensor at the current position and a reference voltage corresponding to the thin film resistance pressure sensor for each triggered thin film resistance pressure sensor.
The embodiment of the present application does not limit the specific manner of determining the calibration voltage.
In one possible implementation manner, the difference between the voltage value corresponding to each sensor and the reference voltage corresponding to the sensor is determined as the calibration voltage corresponding to the sensor.
In another possible implementation manner, the voltage value corresponding to each sensor is subtracted from the reference voltage corresponding to the sensor to obtain a first difference value, and the product of the first difference value and a preset value is determined as the calibration voltage corresponding to the sensor.
S103-A3: the processor determines a fouling condition of the current location based on the calibration voltage corresponding to each of the triggered thin film resistive pressure sensors.
It should be noted that, in the embodiment of the present application, each sensor may be designed to be small enough to enable each sensor to detect only one dirt particle, so that during cleaning, the number of times that the sensor is triggered in the same period of time may be counted to obtain the number of dirt particles in the period of time, and then the concentration position of dirt may be determined; the device can also be combined with the corresponding calibration voltage value of each sensor in the matrix sensor in the same period of time to judge the dirty centralized position.
In some embodiments, the matrix type thin film resistance pressure sensor may be divided into M regions, where M is a positive integer greater than or equal to 2, the number of times that the thin film resistance pressure sensor of each of the M regions is triggered in the same position at the same time and/or the calibration voltage corresponding to the sensor triggered by each of the M regions is counted, the contamination condition of each of the M regions is determined, and the cleaning strategy of the cleaning device is determined according to the contamination condition of each of the M regions.
The following describes the technical solution of the present application in detail with reference to the structure of the matrix type thin film resistance pressure sensor shown in fig. 9 by taking the example that the matrix type thin film resistance pressure sensor is divided into 2 regions.
The matrix type thin film resistance pressure sensor shown in fig. 9 is divided into two areas, for example, the matrix type thin film resistance pressure sensor shown in fig. 9 is divided into a left area and a right area, and the cleaning strategy is determined by counting the number of times the thin film resistance pressure sensor of each of the two areas is triggered and/or the magnitude of the calibration voltage value corresponding to the triggered sensor.
In some embodiments, the processor determines the cleaning strategy based on the number of times the sensor of each of the two zones is triggered.
For example, at the same time and at the same position, if the processor detects that the number of times that the sensor in the left area is triggered is greater than that of the sensor in the right area in the matrix type thin film resistance pressure sensor, it is determined that the left area is a dirt concentrated area relative to the right area, the cleaning device is controlled to clean the left area preferentially, and when the cleaning device cleans the left area, the suction force gear is increased.
In some embodiments, the processor determines the cleaning strategy based on calibration voltage values corresponding to the sensors triggered by each of the two zones.
For example, at the same time and at the same position, if the processor detects that the sum of the calibration voltage values corresponding to the sensors triggered in the left area of the matrix type thin film resistance pressure sensor is smaller than the sum of the calibration voltage values corresponding to the sensors triggered in the right area, it is determined that the right area is a dirt concentrated area relative to the left area, the cleaning device is controlled to clean the right area preferentially, and the suction gear is increased when the cleaning device cleans the right area.
For another example, at the same time and at the same position, if the processor detects that the average value of the calibration voltage values corresponding to the sensors triggered in the left area of the matrix type thin film resistance pressure sensor is smaller than the average value of the calibration voltage values corresponding to the sensors triggered in the right area, it is determined that the right area is a dirt concentrated area relative to the left area, the cleaning device is controlled to preferentially clean the right area, and the suction gear is increased when the cleaning device cleans the right area.
In some embodiments, the processor determines the cleaning strategy based on the number of times the thin film resistive pressure sensor of each of the two zones is triggered and the corresponding calibration voltage value of the triggered sensor.
For example, a matrix type thin film resistance pressure sensor comprises 100 sensors, the left area and the right area respectively comprise 50 sensors, if the number of triggered times of the sensor in the left area is 40, the number of triggered times of the sensor in the right area is 43, the number of triggered times of the sensors in the two areas is similar, but the sum of calibration voltages corresponding to the triggered sensors in the right area is larger than that of the triggered sensors in the left area, the cleaning device is controlled to clean the right area preferentially, and when the cleaning device cleans the right area, the suction gear position is adjusted to be larger.
In some embodiments, the thin film resistance pressure sensor is a matrix thin film resistance pressure sensor, and the matrix thin film resistance pressure sensor includes N kinds of sensitivity thin film resistance pressure sensors, the N kinds of sensitivity thin film resistance pressure sensors are used for detecting N kinds of dirt particles with different sizes, and N is a positive integer greater than or equal to 2.
It should be noted that the specific size of the different sized dirt particles is a range, for example, particles with a size greater than 3 mm are defined as large dirt particles, and particles with a size of 3 mm or less than 3 mm are defined as small dirt particles.
Fig. 10 is a schematic structural diagram of another matrix type thin film resistance pressure sensor according to an embodiment of the present application.
As shown in fig. 10, the matrix type thin film resistive pressure sensor includes sensors of two kinds of sensitivity, and the sensors of two kinds of sensitivity are uniformly arranged in a matrix, and each thin film resistive pressure sensor has its own row and column information.
It should be noted that, in the embodiments of the present application, the number of sensors included in the matrix type thin film resistance pressure sensor, the type of sensitivity, and the arrangement form of the sensors are not particularly limited. The number of the sensors, the type of sensitivity and the arrangement form of the sensors can be optimally adjusted according to the size of the dirt particles required to be detected by the cleaning equipment. For example, when the cleaning apparatus detects small dirt particles, the sensitivity of the sensors can be designed to be higher, the surface area of each sensor can be reduced, and the sensors can be arranged closely; when the cleaning apparatus detects relatively large dirt particles, the sensitivity of the sensors can be designed to be low, the surface area of each sensor can be increased appropriately, and the distance between the sensors can be adjusted to be larger appropriately. When finer and more accurate dirty particle division is needed, more sensitive sensors can be designed in the matrix type thin film resistance pressure sensor.
In a possible implementation of this, the above-mentioned S103 determines the contamination condition of the current location mainly based on the following steps S103-B1 to S103-B4.
S103-B1: the processor determines a voltage value, a conversion coefficient and the number of times of triggering within a preset time period corresponding to the thin film resistance pressure sensor of each of the N sensitivities based on the voltage signal.
It should be noted that, in the embodiment of the present application, the thin film resistance pressure sensor converts a pressure signal into a corresponding resistance signal, and converts the resistance signal into a voltage signal through a voltage dividing circuit connected to the thin film resistance pressure sensor. The conversion coefficient in the embodiment of the present application may be understood as a conversion relationship between the pressure applied to the thin film resistor pressure sensor and the corresponding voltage signal, and the conversion relationship may be linear or non-linear.
It should be noted that, for the sensors with the same sensitivity on the matrix type thin film resistance pressure sensor, the triggered voltage values are also different in the same time, so that the processor is required to determine the voltage value corresponding to the sensor with each sensitivity based on the voltage signal.
In the method 1, for each of the sensors having the different sensitivities, the voltage value of any one of the triggered sensors corresponding to the different sensitivities is determined as the voltage value corresponding to the sensor having the different sensitivities.
Mode 2 is to determine, for each sensor of the sensitivity, the average voltage value of the triggered sensor corresponding to the sensitivity, and determine the average voltage value as the voltage value corresponding to the sensor of the sensitivity.
For example, if the matrix type is thinThe number of high-sensitivity sensors in the membrane resistance pressure sensor is 3 (respectively sensor 1, sensor 2 and sensor 3), in a cleaning process, in a preset time period, the sensor 1 is triggered 5 times, the sensor 2 is triggered 3 times, the sensor 3 is triggered 10 times, the voltage value corresponding to the triggering of the sensor 1 every time is V1, the voltage value corresponding to the triggering of the sensor 2 every time is V2, the voltage value corresponding to the triggering of the sensor 3 every time is V3, and the voltage value corresponding to the high-sensitivity sensors is V1
Figure BDA0004007031840000171
S103-B2: the processor determines voltage components of the N types of dirt particles at each sensitivity at the current position based on the conversion coefficient and the voltage value corresponding to the thin film resistance pressure sensor at each sensitivity of the N types of sensitivities.
In the following, taking N =2 as an example, a technical scheme for determining voltage components of N types of dirt particles at each sensitivity in the embodiment of the present application is described.
When N =2, the matrix type thin film resistance pressure sensor includes a high-sensitivity sensor capable of detecting the impact of large dirt particles and small dirt particles and a low-sensitivity sensor capable of detecting only the impact of large dirt particles.
Firstly, the processor acquires a voltage value corresponding to a sensor triggered in a preset time period and the sensitivity corresponding to each sensor, and respectively determines a voltage value corresponding to a high-sensitivity sensor and a voltage value corresponding to a low-sensitivity sensor. For determining the voltage values corresponding to the sensors with high sensitivity and low sensitivity, reference may be made to the description of the above embodiments, which is not described herein again.
Next, an impact force (or an impact force) corresponding to the large dirt particles is determined based on the voltage value and the conversion coefficient corresponding to the low-sensitivity thin-film resistive pressure sensor, and the voltage value corresponding to the low-sensitivity thin-film resistive pressure sensor is determined as a voltage component corresponding to the large dirt particles under the low-sensitivity thin-film resistive pressure sensor.
The embodiment of the present application does not limit the specific manner of determining the impact force corresponding to the large dirty particles based on the voltage value and the conversion coefficient corresponding to the low-sensitivity thin film resistor pressure sensor.
In some embodiments, the ratio of the voltage value and the conversion factor corresponding to the low-sensitivity thin-film resistive pressure sensor is determined as the impact force corresponding to the large dirt particles.
In some embodiments, the voltage value corresponding to the low-sensitivity thin film resistance pressure sensor is subtracted from the preset value to obtain a second difference value, and the ratio of the second difference value to the conversion coefficient is determined as the impact force corresponding to the large dirt particles.
In the above two implementations, a linear conversion relationship is formed between the pressure borne by the thin film resistive pressure sensor and the corresponding voltage signal, for example, when the conversion coefficient of the thin film resistive pressure sensor is P, and when the thin film resistive pressure sensor bears an impact force of qnnewton, the corresponding voltage signal is P × QV; alternatively, the corresponding voltage signal is P × Q + bV.
Then, based on the impact force corresponding to the large dirt particles, the voltage value corresponding to the high-sensitivity thin-film resistance pressure sensor and the conversion coefficient, the voltage component corresponding to the small dirt particles under the high-sensitivity thin-film resistance pressure sensor and the voltage component corresponding to the large dirt particles under the high-sensitivity thin-film resistance pressure sensor are determined.
The embodiment of the present application does not limit the specific manner of determining the voltage components corresponding to the large dirt particles and the small dirt particles respectively under the high-sensitivity thin film resistance pressure sensor.
In some embodiments, the processing unit multiplies the conversion coefficient corresponding to the high-sensitivity thin film resistive pressure sensor by the impact force corresponding to the large dirt particles to obtain a first product, and determines the first product as a voltage component corresponding to the large dirt particles under the high-sensitivity thin film resistive pressure sensor;
the processing unit determines a difference value between a voltage value corresponding to the high-sensitivity thin film resistance pressure sensor and the first product as a voltage component corresponding to the small dirt particles under the high-sensitivity thin film resistance pressure sensor.
In some embodiments, the processing unit multiplies the conversion coefficient corresponding to the high-sensitivity thin film resistance pressure sensor by the impact force corresponding to the large dirt particles to obtain a first product, subtracts the first product from a preset value to obtain a third difference value, and determines the third difference value as a voltage component corresponding to the large dirt particles under the high-sensitivity thin film resistance pressure sensor;
the processing unit determines a difference between the voltage value corresponding to the high-sensitivity thin-film resistive pressure sensor and the third difference as a voltage component corresponding to the small dirt particles under the high-sensitivity thin-film resistive pressure sensor.
It should be noted that the high-sensitivity sensor can detect the impact force of the large dirt particles as well as the impact force of the small dirt particles, and therefore, the voltage value triggered by the high-sensitivity sensor is related to the impact force of the large dirt particles as well as the impact force of the small dirt particles, i.e., the voltage value triggered by the high-sensitivity sensor includes a voltage component corresponding to the small dirt particles and a voltage component corresponding to the large dirt particles.
The following conversion coefficient of the high-sensitivity sensor is K 1 The conversion coefficient of the low-sensitivity sensor is K 2 For example, the technical solution of the present application will be described with reference to fig. 11.
As shown in FIG. 11, let the impact force of the smaller dirt particles be f 1 The impact force of the larger dirt particles is f 2 The conversion coefficient of the high-sensitivity sensor is K 1 With an output response of F 1 =K 1 *f 1 +K 1 *f 2 (ii) a Low sensitivity sensor with a conversion factor of K 2 With an output response of F 2 =K 2 *f 2 The thin film resistor with high sensitivity can simultaneously pick up the impact of larger particles and smaller particles at the same time, the output response can not distinguish the size of the particles, and the processor respectively collects F from the high-sensitivity sensor and the low-sensitivity sensor 1 ,F 2 Obtained by calculationImpact force to large dirt particles
Figure BDA0004007031840000191
Extracts the corresponding voltage component ^ of the small dirty particles under the high-sensitivity sensor through operation>
Figure BDA0004007031840000192
And voltage component K corresponding to large dirt particles under a high-sensitivity sensor 1 *f 2 =F 1 -K 1 *f 1
S103-B3: the processor determines a voltage value corresponding to each of the N kinds of dirt particles at the current position based on the voltage components of the N kinds of dirt particles at each sensitivity and the number of times of triggering within a preset time.
The embodiment of the present application does not limit the specific manner of determining the voltage value corresponding to each of the N types of dirt particles at the current position based on the voltage components of the N types of dirt particles at each sensitivity and the number of times that the thin-film resistance pressure sensor of each sensitivity is triggered.
In some embodiments, for the ith dirt particle in the N kinds of dirt particles, determining the product of the voltage component of the ith dirt particle at the jth sensitivity in the N sensitivities and the number of times the thin film resistance pressure sensor at the jth sensitivity is triggered as the corresponding voltage value of the ith dirt particle at the jth sensitivity, wherein i is a positive integer from 1 to N, and j is a positive integer from 1 to N;
and for the ith dirt particle in the N dirt particles, adding the voltage values corresponding to the ith dirt particle under the N sensitivities to obtain a first numerical value, and determining the first numerical value as the voltage value corresponding to the ith dirt particle.
In some embodiments, for the ith dirt particle in the N kinds of dirt particles, determining the product of the voltage component of the ith dirt particle at the jth sensitivity in the N sensitivities and the weight corresponding to the jth sensitivity as the voltage value corresponding to the ith dirt particle at the jth sensitivity, wherein i is a positive integer from 1 to N, and j is a positive integer from 1 to N;
and for the ith dirt particle in the N dirt particles, adding the voltage values corresponding to the ith dirt particle under the N sensitivities to obtain a first numerical value, and determining the first numerical value as the voltage value corresponding to the ith dirt particle.
In one possible implementation, the weight corresponding to each sensor of the sensitivity is determined in the following manner.
Aiming at each sensor with the N types of sensitivity, comparing the number of the sensors with the sensitivity in the matrix type thin film resistance pressure sensor with the number of the sensors of the matrix type thin film resistance pressure sensor to obtain a first coefficient corresponding to the sensor with the sensitivity;
and determining the product of the number of times that the film resistance pressure sensor with the sensitivity in the jth of the N sensors with the sensitivities is triggered in a preset time period and a first coefficient corresponding to the film resistance pressure sensor with the sensitivity in the jth as the weight corresponding to the film resistance pressure sensor with the sensitivity in the jth.
S103-B4: the processor determines the pollution condition of the current position based on the voltage value corresponding to each pollution particle.
Through the technical scheme of this application embodiment, can solve the sensor of single sensitivity and can't realize detecting the weight problem of the dirty granule of various not equidimensions simultaneously, promote dirty statistical accuracy.
It should be noted that the processor may record the dirt levels at different positions in a grading manner according to the voltage value of each kind of dirt particles corresponding to different positions of the cleaning apparatus. For example, if the voltage value corresponding to the large dirt particles is greater than the voltage value corresponding to the large dirt particles in the cleaning position F when the cleaning position E of the cleaning device is detected, the processor controls the cleaning device to preferentially clean the cleaning position E when the cleaning device needs to clean the large dirt particles. In addition, in this application embodiment, the sensitivity kind that matrix film resistance pressure sensor includes is more, and dirty granule's classification is just more, through the kind that increases sensitivity, can refine the detection to dirty granule size, improves dirty statistical accuracy.
In summary, the present application provides a cleaning method applied to the above cleaning apparatus, the method including: the film resistor pressure sensor receives the impact of the dirt particles at the current position and outputs a resistor signal with a corresponding resistance value according to the impact strength; the voltage division circuit converts a resistance signal output by the film resistance pressure sensor at the current position into a voltage signal; the processing unit determines the contamination condition of the current position based on the voltage signal. Through the technical scheme of this application, when cleaning, when installing film resistance pressure sensor on cleaning device, film resistance pressure sensor can directly paste in cleaning device's wind channel, and its size, shape and overall arrangement position all can carry out adaptability ground adjustment according to cleaning device's wind channel shape, size and overall arrangement. In addition, the film resistance pressure sensor is insensitive to vibration of the cleaning equipment body, so that on one hand, no extra damping structure is needed to be added when the film resistance pressure sensor is installed, the installation is convenient, on the other hand, the change of the resistance value of the film resistance pressure sensor is not influenced by the vibration of the cleaning equipment body, the voltage signal can more accurately reflect the impact force of dirt particles, and the dirt condition obtained by analyzing the voltage signal by the processing unit is more accurate; meanwhile, the film resistor pressure sensor cannot generate low-frequency noise due to vibration of the cleaning equipment body, so that signals for filtering the low-frequency noise can be omitted when voltage signals are processed, and the signal processing process is simpler and more efficient.
The preferred embodiments of the present application have been described in detail with reference to the accompanying drawings, however, the present application is not limited to the details of the above embodiments, and various simple modifications can be made to the technical solution of the present application within the technical idea of the present application, and these simple modifications are all within the protection scope of the present application. For example, the various features described in the foregoing detailed description may be combined in any suitable manner without contradiction, and various combinations that may be possible are not described in this application in order to avoid unnecessary repetition. For example, various embodiments of the present application may be arbitrarily combined with each other, and the same should be considered as the disclosure of the present application as long as the concept of the present application is not violated.
It should also be understood that, in the various method embodiments of the present application, the sequence numbers of the above-mentioned processes do not imply an execution sequence, and the execution sequence of the processes should be determined by their functions and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
It is to be understood that apparatus embodiments and method embodiments may correspond to one another and that similar descriptions may refer to method embodiments. To avoid repetition, the description is omitted here. Specifically, the apparatus shown in fig. 3 may perform the embodiment of the signal direction finding method, and the foregoing and other operations and/or functions of the antenna housing, the antenna, and the processor in the apparatus are respectively for implementing the embodiment of the signal direction finding method corresponding to the computing device, and are not described herein again for brevity.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (26)

1. A cleaning method applied to a cleaning apparatus including a thin film resistance pressure sensor, a voltage dividing circuit connected to the thin film resistance pressure sensor, and a processing unit connected to the voltage dividing circuit, the method comprising:
the film resistor pressure sensor receives the impact of the dirt particles at the current position and outputs a resistor signal with a corresponding resistance value according to the impact strength;
the voltage division circuit converts a resistance signal output by the thin film resistance pressure sensor at the current position into a voltage signal;
the processing unit determines the pollution condition of the current position based on the voltage signal.
2. The method of claim 1, wherein when the thin film resistive pressure sensor is a single thin film resistive pressure sensor, the processing unit comprises a signal processing circuit and a processor, and the processing unit determines a contamination condition of the current location based on the voltage signal, comprising:
the signal processing circuit converts the voltage signal into a first pulse signal;
the processor determines a dirty condition of the current position based on the width of the first pulse signal.
3. The method of claim 2, wherein the signal processing circuit comprises a filter circuit, a half-wave peak detection circuit, and a comparator circuit, the signal processing circuit converting the voltage signal to a first pulse signal, comprising:
the filter circuit filters high-frequency noise in the voltage signal;
the half-wave peak value detection circuit converts an output signal of the filter circuit into a second pulse signal;
the comparison circuit generates the first pulse signal when detecting that the voltage value of the second pulse signal is greater than a reference voltage.
4. The method of claim 1, wherein when the thin-film resistive pressure sensors are matrix thin-film resistive pressure sensors and the sensitivity of each of the matrix thin-film resistive pressure sensors is the same, the processing unit comprises a processor, and the processing unit determines the fouling condition of the current location based on the voltage signals, comprising:
the processor determines a reference voltage corresponding to the current position of each triggered thin film resistance pressure sensor in the matrix thin film resistance pressure sensors;
the processor determines a calibration voltage corresponding to the film resistance pressure sensor for each triggered film resistance pressure sensor based on a voltage value corresponding to the current position of the film resistance pressure sensor and a reference voltage corresponding to the film resistance pressure sensor;
the processor determines a fouling condition of the current location based on the calibration voltage corresponding to each of the triggered thin film resistive pressure sensors.
5. The method of claim 4, wherein the processor determines a reference voltage corresponding to the current position of the thin film resistive pressure sensor, comprising:
the processor is used for acquiring a voltage value corresponding to the film resistance pressure sensor when the current position has no dirt particles aiming at each film resistance pressure sensor in the triggered film resistance pressure sensors in the matrix type film resistance pressure sensors, and determining the voltage value as a reference voltage corresponding to the current position of the film resistance pressure sensor.
6. The method of claim 4, wherein the processor determines a calibration voltage corresponding to the thin film resistive pressure sensor based on the voltage signal corresponding to the thin film resistive pressure sensor and a reference voltage corresponding to the thin film resistive pressure sensor, and includes:
and the processor determines the difference value between the voltage value corresponding to the film resistance pressure sensor and the reference voltage corresponding to the film resistance pressure sensor as the calibration voltage corresponding to the film resistance pressure sensor.
7. The method of claim 4, wherein said matrix-type thin-film resistive pressure sensor comprises M zones, said M being a positive integer greater than or equal to 2, said method further comprising:
the processor determines a cleaning strategy based on the number of times the thin film resistive pressure sensor of each of the M zones is triggered and/or a calibration voltage corresponding to the thin film resistive pressure sensor of each zone that is triggered.
8. The method of claim 1, wherein when the thin-film resistive pressure sensors are matrix thin-film resistive pressure sensors and the sensitivity of each of the matrix thin-film resistive pressure sensors is the same, the processing unit comprises a processor, and the processing unit determines the fouling condition of the current location based on the voltage signals, comprising:
the processor determines the number of triggered thin film resistance pressure sensors based on voltage signals corresponding to each thin film resistance pressure sensor in the matrix type thin film resistance pressure sensors, and determines the pollution condition of the current position based on the number of triggered thin film resistance pressure sensors.
9. The method according to claim 1, wherein when the thin film resistive pressure sensor is a matrix type thin film resistive pressure sensor, and the matrix type thin film resistive pressure sensor comprises N kinds of sensitivity thin film resistive pressure sensors, the N kinds of sensitivity thin film resistive pressure sensors are used for detecting N kinds of dirt particles with different sizes, wherein N is a positive integer greater than or equal to 2, the processing unit comprises a processor, and the processing unit determines the dirt condition of the current position based on the voltage signal, and comprises:
the processor determines a voltage value and a conversion coefficient corresponding to the thin film resistance pressure sensor of each of the N sensitivities and the number of triggered times in a preset time period based on the voltage signal;
the processor determines voltage components of the N kinds of dirt particles at the current position under each sensitivity based on the conversion coefficient and the voltage value corresponding to the thin film resistance pressure sensor of each sensitivity in the N kinds of sensitivities;
the processor determines a voltage value corresponding to each of the N kinds of dirt particles at the current position based on the voltage components of the N kinds of dirt particles at each sensitivity and the number of times of triggering within a preset time;
the processor determines the pollution condition of the current position based on the voltage value corresponding to each pollution particle.
10. The method of claim 9, wherein the processor determines the voltage value corresponding to each of the N types of dirt particles at the current location based on the voltage components of the N types of dirt particles at each sensitivity and the number of times of triggering within the preset time, and comprises:
the processor determines, for an ith dirt particle in the N kinds of dirt particles, a product of a voltage component of the ith dirt particle at a jth sensitivity in the N sensitivities and a number of times that a thin film resistance pressure sensor of the jth sensitivity is triggered within a preset time as a voltage value corresponding to the ith dirt particle at the jth sensitivity, wherein i is a positive integer from 1 to N, and j is a positive integer from 1 to N;
the processor adds voltage values corresponding to the ith dirt particle in the N kinds of dirt particles under the N kinds of sensitivities to obtain a first numerical value, and determines the first numerical value as the voltage value corresponding to the ith dirt particle.
11. The method according to claim 9, wherein when N is equal to 2, the matrix type thin film resistance pressure sensor comprises a high sensitivity thin film resistance pressure sensor for detecting large dirt particles and small dirt particles, and a low sensitivity thin film resistance pressure sensor for detecting large dirt particles; the processor determines voltage components of the N kinds of dirt particles at each sensitivity at the current position based on the conversion coefficient and the voltage value of the thin film resistance pressure sensor at each sensitivity, and the method comprises the following steps:
the processor determines impact force corresponding to large dirt particles based on the voltage value and the conversion coefficient corresponding to the low-sensitivity film resistance pressure sensor, and determines the voltage value corresponding to the low-sensitivity film resistance pressure sensor as a voltage component corresponding to the large dirt particles under the low-sensitivity film resistance pressure sensor;
and the processor determines a voltage component corresponding to small dirt particles under the high-sensitivity thin film resistance pressure sensor and a voltage component corresponding to large dirt particles under the high-sensitivity thin film resistance pressure sensor based on the impact force corresponding to the large dirt particles, the voltage value corresponding to the high-sensitivity thin film resistance pressure sensor and the conversion coefficient.
12. The method of claim 11, wherein the processor determines an impact force corresponding to a large smudge particle based on the voltage value and the conversion factor corresponding to the low-sensitivity thin-film resistive pressure sensor, comprising:
and the processor determines the ratio of the voltage value corresponding to the low-sensitivity film resistance pressure sensor to the conversion coefficient corresponding to the low-sensitivity film resistance pressure sensor as the impact force corresponding to the large dirt particles.
13. The method of claim 11, wherein the processor determines a voltage component corresponding to small dirt particles at the high-sensitivity thin-film resistive pressure sensor and a voltage component corresponding to large dirt particles at the high-sensitivity thin-film resistive pressure sensor based on the impact force corresponding to the large dirt particles, the voltage value corresponding to the high-sensitivity thin-film resistive pressure sensor, and the conversion coefficient, comprising:
the processor multiplies a conversion coefficient corresponding to the high-sensitivity thin film resistance pressure sensor by an impact force corresponding to the large dirt particles to obtain a first product, and determines the first product as a voltage component corresponding to the large dirt particles under the high-sensitivity thin film resistance pressure sensor;
and the processor determines the difference value of the voltage value corresponding to the high-sensitivity film resistance pressure sensor and the first product as the voltage component corresponding to the small dirt particles under the high-sensitivity film resistance pressure sensor.
14. A cleaning device, characterized in that the cleaning device comprises a thin film resistance pressure sensor, a voltage division circuit connected with the thin film resistance pressure sensor, and a processing unit connected with the voltage division circuit;
the film resistor pressure sensor is used for receiving the impact of the dirt particles at the current position and outputting a resistor signal corresponding to the resistance value according to the impact strength;
the voltage division circuit is used for converting a resistance signal output by the thin film resistance pressure sensor at the current position into a voltage signal;
and the processing unit is used for determining the pollution condition of the current position based on the voltage signal.
15. The apparatus of claim 14, wherein when the thin film resistive pressure sensor is a single thin film resistive pressure sensor, the processing unit comprises signal processing circuitry and a processor,
the signal processing circuit is used for converting the voltage signal into a first pulse signal;
the processor is used for determining the pollution condition of the current position based on the width of the first pulse signal.
16. The apparatus of claim 15, wherein the signal processing circuit comprises a filter circuit, a half-wave peak detection circuit, and a comparison circuit,
the filter circuit is used for filtering high-frequency noise in the voltage signal;
the half-wave peak detection circuit is used for converting the output signal of the filter circuit into a second pulse signal;
the comparison circuit is used for generating the first pulse signal when the voltage value of the second pulse signal is detected to be larger than the reference voltage.
17. The apparatus of claim 14, wherein when the thin-film resistive pressure sensors are matrix thin-film resistive pressure sensors and the sensitivity of each of the matrix thin-film resistive pressure sensors is the same, the processing unit comprises a processor,
the processor is used for determining a reference voltage corresponding to the current position of each triggered thin film resistor pressure sensor in the matrix thin film resistor pressure sensors; for each triggered thin film resistance pressure sensor, determining a calibration voltage corresponding to the thin film resistance pressure sensor based on a voltage value corresponding to the current position of the thin film resistance pressure sensor and a reference voltage corresponding to the thin film resistance pressure sensor; and further determining the pollution condition of the current position based on the calibration voltage corresponding to each triggered film resistance pressure sensor.
18. The apparatus according to claim 17, wherein the processor is specifically configured to, for each triggered one of the matrix type thin film resistor pressure sensors, obtain a voltage value corresponding to the thin film resistor pressure sensor when there is no dirt particle at the current position, and determine the voltage value as a reference voltage corresponding to the thin film resistor pressure sensor at the current position.
19. The device according to claim 17, wherein the processor is specifically configured to determine a difference between a voltage value corresponding to the thin film resistance pressure sensor and a reference voltage corresponding to the thin film resistance pressure sensor as the calibration voltage corresponding to the thin film resistance pressure sensor.
20. The apparatus of claim 17, wherein said matrix thin-film resistive pressure sensor comprises M zones, where M is a positive integer greater than or equal to 2,
the processor is further configured to determine a cleaning strategy based on the number of times the thin film resistance pressure sensor of each of the M zones is triggered and/or a calibration voltage corresponding to the thin film resistance pressure sensor of each zone that is triggered.
21. The apparatus of claim 14, wherein when said thin-film resistive pressure sensors are matrix thin-film resistive pressure sensors and the sensitivity of each of said matrix thin-film resistive pressure sensors is the same, said processing unit comprises a processor,
the processor is used for determining the number of triggered thin film resistance pressure sensors based on the voltage signals corresponding to each thin film resistance pressure sensor in the matrix type thin film resistance pressure sensors, and determining the pollution condition of the current position based on the number of triggered thin film resistance pressure sensors.
22. The apparatus according to claim 14, wherein when the thin film resistive pressure sensor is a matrix type thin film resistive pressure sensor, and the matrix type thin film resistive pressure sensor comprises N kinds of sensitivity thin film resistive pressure sensors for detecting N kinds of dirt particles of different sizes, wherein N is a positive integer greater than or equal to 2, the processing unit comprises a processor,
the processor is used for determining a voltage value and a conversion coefficient corresponding to the thin film resistance pressure sensor of each of the N sensitivities and the number of times of triggering within a preset time period based on the voltage signal; determining voltage components of the N kinds of dirt particles at the current position under each sensitivity based on the conversion coefficient and the voltage value corresponding to the thin film resistance pressure sensor with each sensitivity in the N kinds of sensitivities; determining a voltage value corresponding to each of the N kinds of dirt particles at the current position based on the voltage components of the N kinds of dirt particles under each sensitivity and the number of times of triggering within the preset time; and then determining the pollution condition of the current position based on the voltage value corresponding to each pollution particle.
23. The apparatus of claim 22,
the processor is specifically configured to determine, for an ith dirt particle of the N dirt particles, a product of a voltage component of the ith dirt particle at a jth sensitivity of the N sensitivities and a number of times that the thin film resistance pressure sensor of the jth sensitivity is triggered within a preset time as a voltage value corresponding to the ith dirt particle at the jth sensitivity, and add the voltage values corresponding to the ith dirt particle at the N sensitivities to obtain a first value, and determine the first value as the voltage value corresponding to the ith dirt particle, where i is a positive integer from 1 to N, and j is a positive integer from 1 to N.
24. The apparatus according to claim 22, wherein when N is equal to 2, the matrix type thin film resistance pressure sensor comprises a high sensitivity thin film resistance pressure sensor for detecting large dirt particles and small dirt particles, and a low sensitivity thin film resistance pressure sensor for detecting large dirt particles;
the processor is used for determining impact force corresponding to large dirt particles based on a voltage value and a conversion coefficient corresponding to the low-sensitivity thin film resistance pressure sensor, and determining the voltage value corresponding to the low-sensitivity thin film resistance pressure sensor as a voltage component corresponding to the large dirt particles under the low-sensitivity thin film resistance pressure sensor; and further determining a voltage component corresponding to the small dirt particles under the high-sensitivity thin film resistance pressure sensor and a voltage component corresponding to the large dirt particles under the high-sensitivity thin film resistance pressure sensor based on the impact force corresponding to the large dirt particles, the voltage value corresponding to the high-sensitivity thin film resistance pressure sensor and the conversion coefficient.
25. The apparatus of claim 24,
the processor is specifically configured to determine a ratio of a voltage value corresponding to the low-sensitivity thin film resistance pressure sensor to a conversion coefficient corresponding to the low-sensitivity thin film resistance pressure sensor as an impact force corresponding to large dirt particles.
26. The apparatus of claim 24,
the processor is specifically configured to multiply a conversion coefficient corresponding to the high-sensitivity thin film resistance pressure sensor by an impact force corresponding to the large dirt particles to obtain a first product, and determine the first product as a voltage component corresponding to the large dirt particles under the high-sensitivity thin film resistance pressure sensor; and determining the difference value of the voltage value corresponding to the high-sensitivity thin film resistance pressure sensor and the first product as the voltage component corresponding to the small dirt particles under the high-sensitivity thin film resistance pressure sensor.
CN202211635482.9A 2022-12-19 2022-12-19 Cleaning method and cleaning apparatus Pending CN115956845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211635482.9A CN115956845A (en) 2022-12-19 2022-12-19 Cleaning method and cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211635482.9A CN115956845A (en) 2022-12-19 2022-12-19 Cleaning method and cleaning apparatus

Publications (1)

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CN115956845A true CN115956845A (en) 2023-04-14

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CN202211635482.9A Pending CN115956845A (en) 2022-12-19 2022-12-19 Cleaning method and cleaning apparatus

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