CN115954755A - TO packaging-based semiconductor laser - Google Patents

TO packaging-based semiconductor laser Download PDF

Info

Publication number
CN115954755A
CN115954755A CN202310066605.XA CN202310066605A CN115954755A CN 115954755 A CN115954755 A CN 115954755A CN 202310066605 A CN202310066605 A CN 202310066605A CN 115954755 A CN115954755 A CN 115954755A
Authority
CN
China
Prior art keywords
mirror
optical fiber
semiconductor laser
laser
based semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310066605.XA
Other languages
Chinese (zh)
Inventor
孙骏逸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Ruhan Technology Co ltd
Original Assignee
Suzhou Ruhan Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Ruhan Technology Co ltd filed Critical Suzhou Ruhan Technology Co ltd
Priority to CN202310066605.XA priority Critical patent/CN115954755A/en
Publication of CN115954755A publication Critical patent/CN115954755A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention relates TO a semiconductor laser based on TO encapsulation, which comprises an encapsulation component, a laser transmission module, a semiconductor laser component, an expansion mirror and a reflector, wherein the laser transmission module comprises an optical fiber coupler and a high nonlinear optical fiber; the laser beam emitted by the semiconductor laser piece is coupled to the high nonlinear optical fiber through the optical fiber coupler; the amplifying mirror is connected with the high nonlinear optical fiber and is used for amplifying the laser beam coupled by the optical fiber coupler. According to the invention, by arranging the semiconductor laser part, the optical fiber coupler and the high nonlinear optical fiber, a laser beam emitted by the semiconductor laser part can be coupled into the high nonlinear optical fiber through the optical fiber coupler, the spectrum broadening of the laser beam emitted by the semiconductor laser part can be realized by utilizing the nonlinear effect of the high nonlinear optical fiber, the nonlinear conversion is directly realized in the high nonlinear optical fiber, the loss of the laser beam is reduced, and the conversion efficiency is improved.

Description

TO packaging-based semiconductor laser
Technical Field
The invention relates TO the technical field of lasers, in particular TO a semiconductor laser based on TO encapsulation.
Background
The broad spectrum laser has wide application in the fields of optical frequency measurement, optical pulse waveform measurement, ultra-high speed communication, biomedicine and the like. In the prior art, the broad spectrum laser generally employs an optical fiber supercontinuum light source, a spontaneous emission light source, a multispectral synthetic light source, and the like. The wide-spectrum laser in the prior art needs a complex laser system, the whole device has a large volume and is not suitable for application with portability requirements, and the TO-packaged semiconductor laser with a compact structure generally has a narrow spectrum width and cannot meet the requirements of wide-spectrum application.
Disclosure of Invention
In view of the above, it is necessary TO provide a TO package-based semiconductor laser that not only meets the requirement of wide-spectrum applications, but also has a small size, is portable, and has a simple structure.
A TO package based semiconductor laser comprising:
the packaging assembly comprises a TO tube seat, a TO tube cap and a laser seat, wherein the TO tube cap and the laser seat are arranged on the TO tube seat; an optical fiber mounting groove is formed in the inner side wall of the TO pipe cap;
the laser transmission module comprises an optical fiber coupler arranged on the laser seat and a high nonlinear optical fiber arranged in the optical fiber mounting groove;
the semiconductor laser piece is arranged on the laser seat, and a laser beam emitted by the semiconductor laser piece is coupled to the high-nonlinearity optical fiber through the optical fiber coupler;
the amplifying mirror is arranged on the TO pipe cap, is connected with the high nonlinear optical fiber and is used for amplifying the laser beam coupled by the optical fiber coupler;
and the reflector is arranged on the TO pipe cap and used for receiving the laser beam expanded by the expansion mirror and reflecting the received laser beam TO the outside.
By arranging the semiconductor laser piece, the optical fiber coupler and the high-nonlinearity optical fiber, a laser beam emitted by the semiconductor laser piece can be coupled into the high-nonlinearity optical fiber through the optical fiber coupler, the spectrum broadening of the laser beam emitted by the semiconductor laser piece can be realized by utilizing the nonlinearity effect of the high-nonlinearity optical fiber, and the nonlinear conversion is directly realized in the high-nonlinearity optical fiber, so that the loss of the laser beam is reduced, and the conversion efficiency is improved; through setting up enlarged mirror and speculum, and enlarged mirror is connected with high nonlinear fiber, be used for enlarging through the laser beam of fiber coupler coupling, make the speculum can receive more laser beam, and the speculum can reflect received laser beam to the outside, all set up laser transmission module, semiconductor laser spare, enlarged mirror and speculum in the encapsulation subassembly simultaneously, the demand that the broad spectrum was used has not only been realized, and the volume of this application is less, portable, and simple structure.
In one embodiment, the center of the light emitting region of the semiconductor laser member is aligned with the center of the collection region of the fiber coupler. By aligning the center of the light emitting area of the semiconductor laser member with the center of the collection area of the fiber coupler, the fiber coupler can receive more laser beams emitted by the semiconductor laser member.
In one embodiment, the mirror surface of the reflector is plated with a dielectric reflective film or a metal film for highly reflecting the light beam output by the expander. By arranging the dielectric reflecting film or the metal film, high reflectivity can be provided, the reflectivity of the mirror surface of the reflecting mirror can be increased, and further more laser beams can be reflected by the reflecting mirror.
In one embodiment, the expansion mirror has a large end face and a small end face which are oppositely arranged, the small end face is connected with the high nonlinear optical fiber, and the large end face is arranged close to the reflecting mirror.
In one embodiment, the diameter of the expanding mirror gradually increases from the small end surface to the large end surface.
In one embodiment, the mirror surface center of the enlarging mirror and the mirror surface center of the reflecting mirror are in the same horizontal plane. The mirror surface center of the expansion mirror and the mirror surface center of the reflecting mirror are arranged in the same horizontal plane, so that the reflecting mirror can receive more laser beams output by the expansion mirror, and the received laser beams can be reflected to the outside.
In one embodiment, one end of the TO pipe cap, which is far away from the TO pipe seat, is provided with a prism mounting groove, and the expansion mirror and the reflector are arranged in the prism mounting groove.
In one embodiment, the included angle between the mirror surface of the reflector and the horizontal plane is 30-60 degrees, or the included angle between the mirror surface of the reflector and the horizontal plane is 45 degrees. The route of laser beam can be changed to the speculum, and the laser beam that the speculum received and the speculum reflect to outside laser beam between the contained angle be 90, through the contained angle with the mirror surface of speculum and horizontal plane be 45 for the speculum reflects to outside laser beam and horizontal plane mutually perpendicular.
In one embodiment, the TO package-based semiconductor laser further includes a filling mirror disposed between the expansion mirror and the reflection mirror TO form a complete optical window together with the expansion mirror and the reflection mirror.
In one embodiment, the fiber mounting groove is a spiral structure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention.
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a TO package-based semiconductor laser according TO an embodiment of the present invention;
fig. 2 is a schematic diagram of a partial structure of a TO package-based semiconductor laser according TO an embodiment of the present invention.
Description of the reference numerals
10. A TO package based semiconductor laser; 100. a package assembly; 110. a TO tube seat; 120. a TO pipe cap; 130. a laser seat; 200. a laser transmission module; 210. a fiber coupler; 220. a highly nonlinear optical fiber; 300. a semiconductor laser member; 400. an enlarging mirror; 410. a small end face; 420. a large end face; 500. a mirror; 600. the mirror is filled.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being permanently connected, detachably connected, or integral; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are for purposes of illustration only and do not denote a single embodiment.
Referring TO fig. 1 and 2, an embodiment of the invention provides a TO package based semiconductor laser 10, which includes a package assembly 100, a laser transmission module 200, a semiconductor laser 300, an expanding mirror 400 and a reflecting mirror 500, wherein the laser transmission module 200, the semiconductor laser 300, the expanding mirror 400 and the reflecting mirror 500 are all packaged on the package assembly 100, and the semiconductor laser 300 is used for emitting a laser beam. The semiconductor laser 300 transmits the laser beam to the expanding mirror 400 through the laser transmission module 200, and the expanding mirror 400 is used to expand the laser beam transmitted through the laser transmission module 200. The reflecting mirror 500 is used for receiving the laser beam expanded by the expanding mirror 400 and reflecting the received laser beam to the outside.
The package assembly 100 includes a TO tube base 110, a TO cap 120 and a laser base 130 disposed on the TO tube base 110, a package chamber is formed between the TO cap 120 and the TO tube base 110, and the laser base 130 is disposed in the package chamber. The TO cap 120 is provided with an optical fiber mounting groove on an inner sidewall thereof. One end of the TO pipe cap 120, which is far away from the TO pipe seat 110, is provided with a prism mounting groove. Specifically, the TO cap 120 includes a horizontal plate, and left and right side plates connected TO both ends of the horizontal plate, respectively, and connected TO the TO socket 110. The transverse plate, the left side plate, the right side plate and the TO tube seat 110 are arranged together in a surrounding mode TO form a packaging cavity.
The laser transmission module 200 includes a fiber coupler 210 disposed on the laser mount 130 and a highly nonlinear fiber 220 mounted in the fiber mounting groove. In this embodiment, the fiber coupler 210 is fixedly connected to the laser holder 130. Illustratively, the fiber coupler 210 is affixed to the laser mount 130. In other possible embodiments, the fiber coupler 210 is removably attached to the laser mount 130. Illustratively, the optical fiber coupler 210 is clipped on the laser holder 130, which can facilitate the disassembly and maintenance of the optical fiber coupler 210.
The high nonlinear optical fiber 220 is clamped in the optical fiber mounting groove, so that the high nonlinear optical fiber 220 can be fixed in the optical fiber mounting groove, the high nonlinear optical fiber 220 is prevented from being shaken in an disorderly manner, the connection with the optical fiber coupler 210 is influenced, and the transmission of laser beams can be ensured. Specifically, the fiber mounting groove is of a spiral structure. In other embodiments, the fiber mounting groove may have other structures, and the fiber mounting groove has a straight-line structure.
The semiconductor laser 300 is disposed on the laser mount 130, and a laser beam emitted from the semiconductor laser 300 is coupled to the high nonlinear optical fiber 220 through the optical fiber coupler 210. Specifically, the fiber coupler 210 is connected to one end of a high nonlinear optical fiber 220. In this embodiment, the semiconductor laser 300 is fixedly attached to the laser mount 130. Illustratively, the semiconductor laser 300 is attached to the laser mount 130. In other possible embodiments, the semiconductor laser 300 is removably attached to the laser mount 130. Illustratively, the semiconductor laser element 300 is clamped on the laser base 130, which facilitates the disassembly and maintenance of the semiconductor laser element 300.
It is to be understood that: when strong laser pulses interact with a nonlinear medium, various different frequencies interact to generate laser with a new frequency, and the stronger the interaction is, the wider the generated spectrum broadening is, so that a broadband spectrum in a certain wavelength range, namely a supercontinuum, is generated. The width of the supercontinuum is determined by the dispersion of the nonlinear medium and the intensity of the input laser pulse, and in order to produce a wider supercontinuum, the zero dispersion wavelength of the nonlinear fiber is usually designed around the injection pulse wavelength. The highly nonlinear fiber 220 has special dispersion and nonlinear characteristics, and thus can generate supercontinuum more easily than a general fiber. The parameter optimized supercontinuum can be obtained by specially designing the dispersion characteristic of the optical fiber.
The expanding mirror 400 is disposed in the prism installation groove, and is connected to the high nonlinear optical fiber 220, for expanding the laser beam coupled through the optical fiber coupler 210. Specifically. The other end of the high nonlinear optical fiber 220 is connected to the amplification mirror 400. In the present embodiment, the magnifying lens 400 is fixedly coupled in the prism mounting groove. Illustratively, the magnifying lens 400 is attached to the prism installation groove. In other possible embodiments, the magnifying lens 400 is detachably coupled in the prism mounting groove. Exemplarily, a clamping groove is formed in the prism mounting groove, and the expansion mirror 400 is clamped in the clamping groove, so that the expansion mirror 400 can be conveniently detached and maintained.
The reflection mirror 500 is disposed in the prism mounting groove, and is disposed corresponding to the expansion mirror 400, and is configured to receive the laser beam expanded by the expansion mirror 400 and reflect the received laser beam to the outside. In this embodiment, the reflecting mirror 500 is fixedly coupled in the prism installation groove. Illustratively, the reflecting mirror 500 is attached to the prism installation groove. In other possible embodiments, the reflecting mirror 500 is detachably coupled in the prism installation groove. Illustratively, a clamping groove is formed in the reflector 500, and the reflector 500 is clamped in the clamping groove, so that the reflector 500 can be conveniently detached and maintained.
It is to be understood that: the fiber coupler 210 is used for collecting the laser beam emitted by the semiconductor laser 300 and transmitting the collected laser beam to the expansion mirror 400 through the high nonlinear fiber 220, and the expansion mirror 400 expands the received laser beam, so that the reflection mirror 500 can receive more laser beams.
By arranging the semiconductor laser piece 300, the optical fiber coupler 210 and the high nonlinear optical fiber 220, a laser beam emitted by the semiconductor laser piece 300 can be coupled into the high nonlinear optical fiber 220 through the optical fiber coupler 210, the spectrum broadening of the laser beam emitted by the semiconductor laser piece 300 can be realized by utilizing the nonlinear effect of the high nonlinear optical fiber 220, the nonlinear conversion is directly realized in the high nonlinear optical fiber 220, the loss of the laser beam is reduced, and the conversion efficiency is improved; through setting up enlarged mirror 400 and speculum 500, and enlarged mirror 400 is connected with high nonlinear fiber 220, a laser beam for will be through fiber coupler 210 coupling enlarges, make speculum 500 can receive more laser beam, and speculum 500 can reflect the laser beam received to the outside, with laser transmission module 200 simultaneously, semiconductor laser spare 300, enlarged mirror 400 and speculum 500 all set up in encapsulation subassembly 100, the demand that the broad spectrum was used has not only been realized, and the volume of this application is less, and convenient to carry, and simple structure.
A TO package-based semiconductor laser 10 according TO an embodiment of the present invention will be described in detail below with reference TO the accompanying drawings.
Referring to fig. 1 and 2, according to some embodiments of the present application, optionally, the center of the light emitting region of the semiconductor laser 300 is aligned with the center of the collection region of the fiber coupler 210. By aligning the center of the light emitting area of the semiconductor laser 300 with the center of the collection area of the fiber coupler 210, the fiber coupler 210 can receive more laser beams emitted from the semiconductor laser 300.
Referring to fig. 1 and 2, according to some embodiments of the present application, the mirror surface of the reflecting mirror 500 is optionally plated with a dielectric reflective film or a metal film for highly reflecting the laser beam output from the expanding mirror 400. By providing the dielectric reflective film or the metal film, a high reflectivity can be provided, and the reflectivity of the mirror surface of the mirror 500 can be increased, so that the mirror 500 can reflect more laser beams.
It is to be understood that: the mirror surface of the mirror 500 may be coated with a dielectric reflective film that highly reflects the laser beam output from the expander mirror 400. The mirror surface of the reflector 500 may also be plated with a metal film for highly reflecting the laser beam output by the magnifier 400, which is not limited by the present application and can be set by the user according to the requirement. The mirror surface of the reflecting mirror 500 may be plated with other film layers for highly reflecting the laser beam output from the amplifying mirror 400, as long as the film layers have the function of highly reflecting the laser beam output from the amplifying mirror 400.
It is to be understood that: generally, metals have a large extinction coefficient, and when a light beam is incident from air to the surface of the metal, the amplitude of light entering the metal is rapidly attenuated, so that the light energy entering the metal is correspondingly reduced, and the reflected light energy is increased. The larger the extinction coefficient, the more rapidly the light amplitude decays, the less light energy enters the interior of the metal, and the higher the reflectivity. Illustratively, those metals having a large optical coefficient and stable optical properties may be selected as the metal film material. The metal thin material commonly used in the ultraviolet region is aluminum, aluminum and silver are commonly used in the visible region, gold, silver and copper are commonly used in the infrared region, and chromium and platinum are also commonly used as film materials of some special films. Materials such as aluminum, silver, and copper are easily oxidized in air to deteriorate the performance, and therefore, must be protected by a dielectric film. Commonly used protective film materials include silicon monoxide, magnesium fluoride, silicon dioxide, aluminum oxide and the like.
The metal film has the advantages of simple preparation process and wide working wavelength range. In order to further improve the reflectivity of the metal film, a metal dielectric reflective film may be formed by plating several dielectric layers of a certain thickness on the outer side of the film.
The dielectric reflective film is based on multi-beam interference, and the reflectivity of the optical surface can be increased by plating a thin film with a refractive index higher than that of the material of the reflector 500 on the mirror surface of the reflector 500. The simplest multilayer reflection is formed by alternately evaporating two materials with high and low refractive indexes, and the optical thickness of each film is one quarter of a certain wavelength. Under this condition, the reflected light vectors at the interfaces participating in the superposition have the same vibration direction. The composite amplitude increases with the number of layers of the film.
Referring to fig. 1 and 2, according to some embodiments of the present application, optionally, the expanding mirror 400 has a large end face 420 and a small end face 410 disposed opposite to each other, the small end face 410 is connected to the high nonlinear optical fiber 220, and the large end face 420 is disposed near the reflecting mirror 500. In the present embodiment, the high nonlinear optical fiber 220 is fixedly connected to the small end face 410 of the expansion mirror 400. Illustratively, the highly nonlinear fiber 220 is fused to the small end face 410 of the magnifying mirror 400. In other possible embodiments, the highly nonlinear optical fiber 220 is detachably connected to the small end face 410 of the magnifying lens 400. Illustratively, the highly nonlinear optical fiber 220 is clamped on the small end face 410 of the magnifying mirror 400.
The diameter of the small end surface 410 is smaller than that of the large end surface 420, and the diameter of the expanding mirror 400 gradually increases from the small end surface 410 to the large end surface 420, so that the laser beam received from the small end surface 410 can be gradually expanded, and the stability of the laser beam can be ensured. Specifically, the magnifying lens 400 may be understood as a truncated cone structure.
Referring to fig. 1 and 2, according to some embodiments of the present disclosure, optionally, the center of the mirror surface of the expanding mirror 400 and the center of the mirror surface of the reflecting mirror 500 are in the same horizontal plane, and by disposing the center of the mirror surface of the expanding mirror 400 and the center of the mirror surface of the reflecting mirror 500 in the same horizontal plane, the reflecting mirror 500 can receive more laser beams output by the expanding mirror 400 and can reflect the received laser beams to the outside.
Specifically, the angle between the mirror surface of the reflector 500 and the horizontal plane is 30 ° to 60 °. It is to be understood that: the included angle between the mirror surface of the reflector 500 and the horizontal plane is not limited in the present application, and can be set according to the use requirement. It should be noted that: the mirror 500 is capable of altering the course of the laser beam. The angle between the laser beam received by the mirror 500 and the laser beam reflected to the outside by the mirror 500 is 90 °.
More specifically, the mirror surface of the mirror 500 makes an angle of 45 ° with the horizontal plane. That is, the laser beam received by the reflecting mirror 500 is parallel to the horizontal plane, the laser beam reflected to the outside by the reflecting mirror 500 is perpendicular to the horizontal plane.
Referring TO fig. 1 and 2, according TO some embodiments of the present application, optionally, the TO package based semiconductor laser 10 further includes a filling mirror 600, and the filling mirror 600 is disposed between the expanding mirror 400 and the reflecting mirror 500 TO form a complete optical window with the expanding mirror 400 and the reflecting mirror 500. Specifically, the filling mirror 600 is bonded between the expanding mirror 400 and the reflecting mirror 500. It is to be understood that: the filling mirror 600 has no reflective function, and is only used to form a complete optical window with the expanding mirror 400 and the reflecting mirror 500.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A TO package based semiconductor laser comprising:
the packaging assembly comprises a TO tube seat, a TO tube cap and a laser seat, wherein the TO tube cap and the laser seat are arranged on the TO tube seat; an optical fiber mounting groove is formed in the inner side wall of the TO pipe cap;
the laser transmission module comprises an optical fiber coupler arranged on the laser seat and a high nonlinear optical fiber arranged in the optical fiber mounting groove;
the semiconductor laser piece is arranged on the laser seat, and a laser beam emitted by the semiconductor laser piece is coupled to the high-nonlinearity optical fiber through the optical fiber coupler;
the amplifying mirror is arranged on the TO pipe cap, is connected with the high nonlinear optical fiber and is used for amplifying the laser beam coupled by the optical fiber coupler;
and the reflector is arranged on the TO pipe cap and used for receiving the laser beam expanded by the expansion mirror and reflecting the received laser beam TO the outside.
2. The TO package based semiconductor laser of claim 1, wherein a center of a light emitting area of said semiconductor laser piece is aligned with a center of a collection area of said fiber coupler.
3. The TO package based semiconductor laser of claim 1, wherein the mirror facet of the reflector is plated with a dielectric reflective film or a metal film that highly reflects the beam output from the expander mirror.
4. A TO package based semiconductor laser as claimed in claim 1 wherein said expansion mirror has oppositely disposed large and small facets, said small facet being connected TO said highly nonlinear optical fiber, said large facet being disposed adjacent TO said reflector.
5. The TO package based semiconductor laser of claim 4, wherein said enlarged mirror increases in diameter from said small facet TO said large facet.
6. A TO package based semiconductor laser as claimed in claim 1 wherein the mirror center of said expansion mirror is in the same horizontal plane as the mirror center of said reflector.
7. The TO package based semiconductor laser as claimed in claim 1, wherein the TO cap has a prism mounting groove formed at an end thereof away from the TO stem, and the expanding mirror and the reflecting mirror are disposed in the prism mounting groove.
8. A TO package based semiconductor laser as claimed in claim 1 wherein the mirror facet of the reflector has an angle of 30 ° TO 60 ° with the horizontal plane or 45 ° with the horizontal plane.
9. The TO package based semiconductor laser of claim 1, further comprising a filler mirror disposed between the enlarged mirror and the reflector TO form a complete optical window with the enlarged mirror and the reflector.
10. The TO package based semiconductor laser of claim 1, wherein said fiber mounting groove is a spiral structure.
CN202310066605.XA 2023-01-17 2023-01-17 TO packaging-based semiconductor laser Pending CN115954755A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310066605.XA CN115954755A (en) 2023-01-17 2023-01-17 TO packaging-based semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310066605.XA CN115954755A (en) 2023-01-17 2023-01-17 TO packaging-based semiconductor laser

Publications (1)

Publication Number Publication Date
CN115954755A true CN115954755A (en) 2023-04-11

Family

ID=87290861

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310066605.XA Pending CN115954755A (en) 2023-01-17 2023-01-17 TO packaging-based semiconductor laser

Country Status (1)

Country Link
CN (1) CN115954755A (en)

Similar Documents

Publication Publication Date Title
Baillard et al. Interference-filter-stabilized external-cavity diode lasers
US6111900A (en) Solid-state laser apparatus and method with second harmonic wave features
US4358851A (en) Fiber optic laser device and light emitter utilizing the device
NO843902L (en) FIBEROPTICAL AMPLIFIER
US8736835B2 (en) Dual-gas microcavity Raman sensor and method of use
CN201984180U (en) Fiber Fabry-Perot tunable filter
US4884281A (en) Low cost/power visible light solid-state laser
US20150162723A1 (en) Small packaged tunable laser
US20070268941A1 (en) Vertical external cavity surface emitting laser and method thereof
JP2005533282A (en) Compensation of chromatic dispersion in optical fibers.
WO1996024874A9 (en) Cylindrical microlens external cavity for laser diode frequency control
CN110806623A (en) Optical transceiver
US4173001A (en) Laser apparatus
US7649680B2 (en) Wavelength converting apparatus
CN115954755A (en) TO packaging-based semiconductor laser
JP7295127B2 (en) External cavity quantum cascade laser
US7068700B2 (en) Optical bench for diode-pumped solid state lasers in field applications
US6377386B1 (en) System and process fabry-perot filter train configuration using derived mode field size in fiber optic system
CN111129951A (en) Wide-tuning external cavity semiconductor laser cavity based on grating and MEMS (micro-electromechanical systems) reflector
CN103762488A (en) High power narrow linewidth tunable laser
CN109950785B (en) Wavelength tunable external cavity laser
CN113406789A (en) Tunable optical filter
CN112904579B (en) Compact fiber laser beam expanding and collimating system
JPH09153660A (en) Semiconductor laser module
CN213520690U (en) External cavity semiconductor laser

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination