CN115954405A - Single-photon avalanche diode device, detection circuit, laser radar, preparation method, driving method and distance measuring method - Google Patents
Single-photon avalanche diode device, detection circuit, laser radar, preparation method, driving method and distance measuring method Download PDFInfo
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- CN115954405A CN115954405A CN202310239491.4A CN202310239491A CN115954405A CN 115954405 A CN115954405 A CN 115954405A CN 202310239491 A CN202310239491 A CN 202310239491A CN 115954405 A CN115954405 A CN 115954405A
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Abstract
The application relates to a single photon avalanche diode device, a detection circuit, a laser radar, a preparation method, a driving method and a distance measuring method. A single photon avalanche diode device comprising: a substrate; the substrate includes a back surface and a front surface opposite the back surface; an epitaxial layer disposed on the front surface; the P-type doped region, the PN combination doped region and the first isolation region are arranged at the top of the epitaxial layer; wherein, an anode contact is arranged in the P-type doped region; the PN combination doping area comprises a first sub PN combination doping area and a second sub PN combination doping area, and the first isolation area is positioned between the first sub PN combination doping area and the second sub PN combination doping area; the first sub-PN junction doping region and the second sub-PN junction doping region are both provided with cathode contacts. According to the method and the device, the sub-pixel device is partitioned and measured through the single photon avalanche diode device, so that the linearity and the precision of distance measurement can be improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a single photon avalanche diode device, a detection circuit, a laser radar, a preparation method, a driving method and a distance measuring method.
Background
The laser radar is a radar system which emits laser beams to detect characteristic quantities such as distance, speed and the like of a target, and plays important roles of road edge detection, obstacle identification, real-time positioning, drawing and the like in automatic driving. The lidar includes photodetectors, one of which is a Single Photon Avalanche Diode (SPAD), which is an Avalanche Diode operating in geiger mode. Single photons generate carriers in the SPAD neutral body region or the depletion region, move to the avalanche region of high electric field through diffusion or drift, and trigger avalanche current due to impact ionization. Once avalanche is triggered, it is either actively or passively quenched, and after a certain time it returns to the reset state again to detect the next photon event. The SPAD cannot detect a photon during the time from quenching to reset.
The SPAD dead time is limited such that only one pulse can be output within one lasing pulse. Along with the shortening of the distance and the increase of the light intensity, the time of each pulse output is closer to the front edge of the emitted light pulse until the time is consistent with the front edge of the emitted light pulse, and at the moment, the density of an output histogram of photon detection is not changed along with the change of the light intensity any more, so that the accurate signal light return time cannot be obtained according to the histogram, and the ranging linearity and the accuracy of the laser radar are reduced.
Disclosure of Invention
The embodiment of the application provides a single photon avalanche diode device, a detection circuit, a laser radar, a preparation method, a driving method and a ranging method, and can improve the linearity and precision of ranging.
In one aspect, the present application provides a single photon avalanche diode device comprising: a substrate; the substrate includes a back surface and a front surface opposite the back surface; an epitaxial layer disposed on the front surface; the P-type doped region, the PN combination doped region and the first isolation region are arranged at the top of the epitaxial layer; wherein, an anode contact is arranged in the P-type doped region; the PN combining and doping area comprises a first sub PN combining and doping area and a second sub PN combining and doping area, and the first isolation area is positioned between the first sub PN combining and doping area and the second sub PN combining and doping area; the first sub-PN junction doping region and the second sub-PN junction doping region are both provided with cathode contacts.
Optionally, the two sub-PN junction doping regions are a first sub-PN junction doping region and a second sub-PN junction doping region, respectively; each sub PN combination doping area comprises a sub P type doping area and a sub N type doping area which is positioned below the sub P type doping area.
Optionally, the first isolation region is an STI trench formed using a shallow trench isolation STI process.
Optionally, the single photon avalanche diode device further includes:
a second isolation region disposed around the epitaxial layer; the second isolation region is a DTI trench formed using a deep trench isolation DTI process.
Optionally, the cathode contact of the first sub-PN junction doped region is connected to the component through the first inverter and/or the component respectively; and the cathode contact of the second sub PN combination doping area is respectively connected with the component and the component through a second inverter.
Optionally, the anode contact is coupled to a first supply voltage terminal; the cathode contact 160 of the first sub-PN junction doping region 131 is coupled to the second power supply voltage terminal through the first resistor 470; the cathode contact 160 of the second sub-PN junction doped region 132 is coupled to a second power supply voltage terminal through a second resistor 480.
In another aspect, the present application provides a detection circuit for a single photon avalanche diode device, which is applied to the single photon avalanche diode device, and the detection circuit includes: the first circuit connects the cathode contact of the first sub PN combination doping area through a first inverter and/or component, and connects the cathode contact of the second sub PN combination doping area through a second inverter and/or component; and the second circuit connects the cathode contact of the first sub PN combination doping area with the component through a first phase inverter and connects the cathode contact of the second sub PN combination doping area with the component through a second phase inverter.
In another aspect, the present application provides a lidar comprising: the transmitting unit is used for providing a transmitting beam, and the transmitting beam is reflected by a target object to form an echo beam; and the receiving unit is used for receiving the echo light beam and comprises the single photon avalanche diode device.
In another aspect, the present application provides a method for manufacturing a single photon avalanche diode device, including:
providing a substrate; the substrate includes a back surface and a front surface opposite the back surface; forming an epitaxial layer on the front surface of the substrate; forming a first isolation region on the end face, far away from the substrate, of the epitaxial layer by using an STI process; forming a P-type doped region and a PN combination doped region on the end surface of the epitaxial layer far away from the substrate; the PN combination doping area comprises a first sub PN combination doping area and a second sub PN combination doping area, and the first isolation area is positioned between the first sub PN combination doping area and the second sub PN combination doping area; forming a second isolation region extending from the front surface of the substrate to an end face of the epitaxial layer away from the substrate using a DTI process; forming an anode contact in the P-type doped region; a cathode contact is formed within each sub-PN junction doped region.
In another aspect, the present application provides a method for driving a single photon avalanche diode device, which is applied to the single photon avalanche diode device, and the method includes: coupling an anode contact to a first supply voltage terminal; respectively coupling the cathode contact of the first sub PN combination doping area and the cathode contact of the second sub PN combination doping area to a second power supply voltage terminal through a quenching resistor; outputting a first driving voltage to a first power supply voltage terminal; and outputting the second driving voltage to a second power supply voltage terminal.
In another aspect, the present application provides a distance measuring method applied to the detection circuit of the single photon avalanche diode device, where the method includes: emitting light pulses to the target object and detecting a first detection signal output by the first circuit and a second detection signal output by the second circuit; determining first detection photon data according to the first detection signal; the first detection photon data represent the number of photons detected by the first circuit in each preset time interval in a plurality of preset time intervals; determining second detection photon data according to the second detection signal; the second detected photon data comprises the number of photons detected by the second circuit in each preset time interval; determining first distance information of the target object based on the first detection photon data; determining second distance information of the target object based on the second detected photon data; determining the first distance information as target distance information under the condition that the first distance information and/or the second distance information meet a first preset condition; and determining the second distance information as the target distance information under the condition that the first distance information and/or the second distance information meet a second preset condition.
Optionally, each preset time interval corresponds to a preset photon return time, and the determining of the first distance information of the target object based on the first detected photon data includes: and determining first distance information of the target object based on the first detection photon data, the preset photon return time corresponding to the preset time interval of each first detection photon data and the precision of the time-to-digital conversion module.
On the other hand, the present application provides a distance measuring device, which is applied to the detection circuit of the single photon avalanche diode device, and the device includes:
a transmitting module for transmitting light pulses to a target object and detecting a first detection signal output by the first circuit and a second detection signal output by the second circuit;
the first determining module is used for determining first detection photon data according to the first detection signal; the first detection photon data represent the number of photons detected by the first circuit in each preset time interval in a plurality of preset time intervals;
the second determining module is used for determining second detection photon data according to the second detection signal; the second detected photon data comprises the number of photons detected by the second circuit in each preset time interval;
a third determination module for determining first distance information of the target object based on the first detected photon data;
a fourth determination module for determining second distance information of the target object based on the second detected photon data;
the first distance module is used for determining the first distance information as target distance information under the condition that the first distance information and/or the second distance information meet a first preset condition;
and the second distance module is used for determining the second distance information as the target distance information under the condition that the first distance information and/or the second distance information meet a second preset condition.
Optionally, each preset time interval corresponds to a preset photon return time, and the third determining module is configured to: and determining first distance information of the target object based on the first detection photon data, the preset photon return time corresponding to the preset time interval of each first detection photon data and the precision of the time-to-digital conversion module.
The single photon avalanche diode device, the detection circuit, the laser radar, the preparation method, the driving method and the ranging method provided by the embodiment of the application have the following beneficial effects:
(1) By isolating the single-photon avalanche diode pixel device into a plurality of sub-pixel devices, each sub-pixel can be independently quenched and reset under the coordination of the pixel quenching circuit without influencing the working state of the surrounding sub-pixels, so that the partitioned photon detection is realized;
(2) The response of the single photon avalanche diode to strong light during close-range measurement is reduced through the logic and relation among the sub-pixels, and therefore the situation of histogram saturation is solved. When the reflected light intensity of an object at a middle distance and a long distance is insufficient during measurement, the responsivity of the single photon avalanche diode to weak light is increased through the logic or relationship among the sub-pixels, so that the normal distance measurement function is recovered;
(3) By adding the first isolation region, the PN combination doped region is divided into a plurality of sub-PN combination doped regions by the plurality of first isolation regions, or the position of the first isolation region is adjusted, so that equivalent photon detection efficiency with different values can be flexibly realized;
(4) The method comprises the steps of obtaining first distance information through obtaining a detection signal output by an OR gate, obtaining a detection signal output by the AND gate to obtain second distance information, then combining the first distance information and the second distance information to measure distance, flexibly adopting a distance measuring result under the conditions of long distance and short distance, avoiding the problem of low precision of short distance measurement, and avoiding the problem of inaccurate long distance measurement, thereby ensuring the precision and linearity of short distance measurement and the accuracy of long distance measurement.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a single photon avalanche diode device according to an embodiment of the present application;
figure 2 is a schematic diagram of a single photon avalanche diode device according to an embodiment of the present application;
figure 3 is a top view of a single photon avalanche diode device as provided by embodiments of the present application;
fig. 4 is a schematic circuit diagram of a single photon avalanche diode device according to an embodiment of the present application;
figure 5 is a schematic flow chart diagram of a method of fabricating a single photon avalanche diode device in accordance with an embodiment of the present application;
fig. 6 is a schematic flowchart of a method for driving a single photon avalanche diode device according to an embodiment of the present application;
fig. 7 is a schematic flowchart of a ranging method according to an embodiment of the present application;
FIG. 8 (a) is a schematic waveform of an emitted light pulse provided by an embodiment of the present application;
fig. 8 (b) is a schematic waveform of cathode voltages of two sub-pixel devices of a single photon avalanche diode device according to an embodiment of the present application;
fig. 8 (c) is a schematic waveform diagram of output signals of two sub-pixel devices of a single photon avalanche diode device according to an embodiment of the present application;
fig. 8 (d) is a waveform diagram of an output signal of an and component and/or a component of a single photon avalanche diode device according to an embodiment of the present application;
figure 8 (e) is a schematic diagram of an output histogram of a single photon avalanche diode device according to an embodiment of the present application;
figure 9 (a) is a distance versus reflected light intensity diagram of a single photon avalanche diode device according to an embodiment of the present application;
fig. 9 (b) and 9 (c) are schematic diagrams of output histograms of detection distances of a single photon avalanche diode device according to an embodiment of the present application;
fig. 10 is a schematic diagram of a range linearity of a range finding method according to an embodiment of the present application;
fig. 11 is a schematic structural diagram of a distance measuring device according to an embodiment of the present disclosure;
an epitaxial layer-110; a P-type doped region-120; PN junction doping region-130; a first sub-PN junction doped region 131; a second sub-PN junction doped region-132; a first isolation region-140; anode contact-150; cathode contact-160; a second isolation region-170; a first subpixel device-410; a second subpixel device-420; a first inverter-430; a second inverter-440; or component-450; and component-460; a first resistance-470; second resistance-480.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making creative efforts shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be implemented in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a single photon avalanche diode device according to an embodiment of the present disclosure. The single photon avalanche diode device illustrated in fig. 1 includes a substrate, an epitaxial layer 110, a p-type doped region 120, a pn junction doped region 130, a first isolation region 140, an anode contact 150, and a cathode contact 160.
In an alternative embodiment, the substrate includes a back surface and a front surface opposite the back surface, the substrate not being illustrated in fig. 1 for ease of illustration. An epitaxial layer 110 is disposed on the front surface of the substrate.
The P-type doped region 120, the PN junction doped region 130, and the first isolation region 140 are disposed on top of the epitaxial layer 110. Alternatively, the P-type doped region 120 may be a P-well doped region.
The PN junction doping region 130 includes a first sub-PN junction doping region 131 and a second sub-PN junction doping region 132, and the first isolation region 140 is located between the first sub-PN junction doping region 131 and the second sub-PN junction doping region 132. The first sub PN junction doped region 131 and the second sub PN junction doped region 132 may be sub-diode regions of a single photon avalanche diode device. Each sub PN combination doping area comprises a sub P type doping area and a sub N type doping area which is positioned below the sub P type doping area.
An anode contact 150 is disposed in the P-type doped region 120, and a cathode contact 160 is disposed in each of the first sub PN junction doped region 131 and the second sub PN junction doped region 132. Specifically, separate cathode contacts 160 are disposed in the first sub-PN junction doping region 131 and the second sub-PN junction doping region 132, and the anode contact 150 is shared by the first sub-PN junction doping region 131 and the second sub-PN junction doping region 132.
Optionally, the first isolation region 140 is an STI trench formed using a shallow trench isolation STI process.
Optionally, each sub-pixel device of the single photon avalanche diode device provided in the embodiment of the present application may operate in a geiger mode, and when a photon is collected by a PN junction and avalanche occurs, the sub-pixel may be considered to complete one-time photon detection. The detection efficiency is positively correlated with the area of the sub-pixel. The areas of the first sub PN junction doping region 131 and the second sub PN junction doping region 132 can be flexibly changed by changing the position of the first isolation region 140, thereby changing the photon detection efficiency of the two sub-pixels. In an alternative embodiment, the sum of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device is fixed, for example, may be fixed to 20%, in this embodiment, the photon detection efficiencies of the two sub-pixel devices may be adjusted to 10% and 10%, 12% and 8%, 15% and 5%, and so on, by adjusting the position of the first isolation region 140. It should be noted that the present application does not limit the photon detection efficiency of the sub-pixel device, and in other alternative embodiments, the sum of the photon detection efficiency of each of the plurality of sub-pixel devices and the photon detection efficiency may also be other alternative values. The embodiment of the application isolates the single-photon avalanche diode pixel device into a plurality of sub-pixel devices, so that each sub-pixel can independently carry out quenching and resetting operations under the cooperation of the pixel quenching circuit without influencing the working state of the surrounding sub-pixels, and therefore the regional photon detection is realized.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a single photon avalanche diode device according to an embodiment of the present disclosure. The single photon avalanche diode device illustrated according to fig. 2 comprises a substrate, an epitaxial layer 110, a p-type doped region 120, a pn-junction doped region 130, a first isolation region 140, an anode contact 150, a cathode contact 160 and a second isolation region 170.
In an alternative embodiment, as illustrated in figure 2, the single photon avalanche diode device further comprises:
a second isolation region 170 disposed around the epitaxial layer 110; the second isolation region 170 is a DTI trench formed using a deep trench isolation DTI process. The second isolation region 170 is used to isolate the single photon avalanche diode pixel device illustrated in figure 2 from other semiconductor structures.
Referring to fig. 3, fig. 3 is a top view of a single photon avalanche diode device according to an embodiment of the present application.
As illustrated in fig. 3, the P-type doped region 120 is located at the edge of a single photon avalanche diode pixel device. The anode contact 150 is distributed in the P-type doped region 120.
The first isolation region 140 divides the PN junction doping region 130 into two sub-PN junction doping regions, namely a first sub-PN junction doping region 131 and a second sub-PN junction doping region 132. The two cathode contacts 160 are respectively and uniformly distributed in the two sub-PN doped regions in a ring shape. In the embodiment of the present application, the first isolation region 140 is disposed to divide the PN junction doping region 130 into two sub-PN junction doping regions, so as to divide the single photon avalanche diode pixel device into two sub-pixel devices.
The second isolation region 170 is disposed around the epitaxial layer 110.
In an alternative embodiment, the number of the first isolation region 140 may include a plurality of regions, and in particular, the structure of the single photon avalanche diode provided by the embodiment of the present application is not limited to the structures illustrated in fig. 1, fig. 2, and fig. 3, the number of the sub PN junction doping regions may be three or more, and the single photon avalanche diode pixel device may be divided into three or more sub pixel devices by the first isolation region 140. Based on the structures shown in fig. 1, fig. 2 and fig. 3, the total area of the PN junction doping region 130 is kept unchanged, the single photon avalanche diode device can be further provided with a plurality of first isolation regions, and the plurality of first isolation regions can separate the PN junction doping region into a plurality of sub-PN junction doping regions to form a plurality of sub-pixel devices. In this embodiment, the sum of the photon detection efficiencies of the plurality of sub-pixel devices of the single photon avalanche diode device is fixed, for example, can be fixed to 20%, and the photon detection efficiency of each sub-pixel device can be achieved by adjusting the area of each sub-PN junction doping region in different sub-PN junction doping regions. Optionally, in an embodiment where the number of the sub PN junction doped regions is 3 in total, the photon detection efficiency of the 3 sub PN junction doped regions from the outside to the inside may be 5%,5%, and 10%, respectively. It should be noted that the number of sub-pixel devices and the photon detection efficiency of each sub-pixel device are not limited in this embodiment, and in other alternative embodiments, the number of sub-pixel devices may be other, and the photon detection efficiency of each sub-pixel device may be other values.
Referring to fig. 4, fig. 4 is a schematic circuit diagram of a single photon avalanche diode device according to an embodiment of the present disclosure.
For convenience of illustration, the cathode of the first sub-pixel device 410 shown in fig. 4 represents the cathode contact 160 of the first sub-PN junction doping region 131 as set forth above, and the anode of the first sub-pixel device 410 represents the anode contact 150 of the first sub-PN junction doping region 131 as set forth above; the cathode of the second sub-pixel device 420 shown in fig. 4 represents the cathode contact 160 of the second sub-PN junction doping region 132 as set forth above, and the anode of the second sub-pixel device 420 represents the anode contact 150 of the second sub-PN junction doping region 132 as set forth above.
As illustrated in fig. 4, the circuit includes a quench circuit. In the quenching circuit, the anode of the first sub-pixel device 410 and the anode of the second sub-pixel device 420 are coupled to a first power supply voltage terminal; the cathode of the first sub-pixel device 410 and the cathode of the second sub-pixel device 420 are coupled to a second power supply voltage terminal through a first resistor 470 and a second resistor 480, respectively. The first resistance 470 and the second resistance 480 may be quenching resistances. Optionally, the quenching circuit may be an active quenching circuit or a passive quenching circuit.
As illustrated in fig. 4, the circuit includes a detection circuit. In the detection circuit, the cathode of the first sub-pixel device 410 is connected to the component 460 through the first inverter 430 and the or component 450, respectively. The cathode of the second sub-pixel device 420 is connected to the component 460 through the second inverter 440 and the or component 450, respectively. Or component 450 is configured to output a first detection signal, and component 460 is configured to output a second detection signal, the first detection signal and the second detection signal being usable for object detection. It should be understood that the first detection signal output by the or component 450 is high when any one of the first sub-pixel device 410 and the second sub-pixel device 420 outputs high level, and the equivalent first photon detection efficiency is the sum of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device; the second detection signal output by the and component 460 is high if and only if both the first subpixel device 410 and the second subpixel device 420 output high; the equivalent second photon detection efficiency is the product of the photon detection efficiencies of the first and second subpixel devices. For example, if the first sub-pixel device 410 outputs a low level and the second sub-pixel device 420 outputs a high level, the OR component 450 outputs a high level and the AND component 460 outputs a low level.
Optionally, the areas of the first sub-PN junction doping region 131 and the second sub-PN junction doping region 132 may be determined according to the position information of the first isolation region 140, so as to determine the photon detection efficiency of the two sub-pixels; and determining the sum of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device as a first photon detection efficiency, and determining the product of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device as a second photon detection efficiency.
In an alternative embodiment, the sum of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device is fixed, for example, may be fixed to 20%, in this embodiment, the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device may be determined according to the position of the first isolation region 140, for example, 10% and 10%, 12% and 8%, or 15% and 5%, respectively, and so on.
It should be noted that, the present application does not limit the position information of the first isolation region 140 and the photon detection efficiency of the sub-pixel device, in some other optional embodiments, the position of the first isolation region 140 may be any position, and the sum of the photon detection efficiency and the photon detection efficiency of each of the plurality of sub-pixel devices may also be other optional values.
Accordingly, the present application provides a lidar comprising: and the transmitting unit is used for providing a transmitting beam, and the transmitting beam is reflected by the target object to form an echo beam. And the receiving unit is used for receiving the echo light beam and comprises the single photon avalanche diode device.
Accordingly, the present application provides a method for fabricating a single photon avalanche diode device, which is described in detail with reference to fig. 5.
Referring to fig. 5, fig. 5 is a schematic flow chart illustrating a method for fabricating a single photon avalanche diode device according to an embodiment of the present application, including:
step S501: a substrate is provided.
Alternatively, the substrate may include a back surface and a front surface opposite the back surface.
Step S502: an epitaxial layer 110 is formed on the front surface of the substrate.
Step S503: a first isolation region 140 is formed on the end surface of epitaxial layer 110 away from the substrate using an STI process.
Step S504: a P-type doped region 120 and a PN junction doped region 130 are formed on the end surface of the epitaxial layer 110 away from the substrate.
Alternatively, the PN junction doping region 130 may include two sub-PN junction doping regions, which are a first sub-PN junction doping region 131 and a second sub-PN junction doping region 132, respectively, and the first isolation region 140 may be located between the first sub-PN junction doping region 131 and the second sub-PN junction doping region 132.
Step S505: a DTI process is used to form a second isolation region 170 extending from the front surface of the substrate to the end face of the epitaxial layer 110 away from the substrate.
Step S506: an anode contact 150 is formed within the P-type doped region 120.
Step S507: a cathode contact 160 is formed within each sub-PN junction doping region.
Accordingly, the present application provides a method for driving a single photon avalanche diode device, which is applied to the single photon avalanche diode device described above and described in detail below with reference to fig. 6.
Referring to fig. 6, fig. 6 is a schematic flowchart of a driving method of a single photon avalanche diode device according to an embodiment of the present application, including:
step S601: the anode contact 150 is coupled to a first power supply voltage terminal.
Step S602: the cathode contact 160 of the first sub PN junction doping region 131 and the cathode contact 160 of the second sub PN junction doping region 132 are respectively coupled to a second power voltage terminal through a quenching resistor.
Step S603: the first driving voltage is output to the first power supply voltage terminal.
Optionally, the first driving voltage may be a voltage value within a range of 3 to 5 v. Alternatively, the first driving voltage may be 3.3V.
Step S604: and outputting the second driving voltage to a second power supply voltage terminal.
Alternatively, the second driving voltage may be-20V.
It should be noted that the present application does not limit the specific voltage value of the first driving voltage or the second driving voltage, and in some alternative embodiments, the first driving voltage and the second driving voltage may also be other voltage values.
Correspondingly, the application provides a distance measuring method which is applied to the single photon avalanche diode device and the detection circuit of the single photon avalanche diode device. The method will be described below with reference to fig. 7, 8 (a) -8 (e) and 9 (a) -9 (c).
Fig. 7 is a flowchart illustrating a ranging method according to an embodiment of the present application. Referring to fig. 7, an exemplary flow of a ranging method may include:
step S701: light pulses are emitted toward the target object, and a first detection signal output by the first circuit and a second detection signal output by the second circuit are detected.
Fig. 8 (a) is a waveform diagram of an emitted light pulse according to an embodiment of the present application. Fig. 8 (a) illustrates a waveform of a transmitted light pulse, the abscissa of which may represent time; alternatively, the frequency of emitting light pulses to the target object may be a preset frequency.
Fig. 8 (b) is a waveform diagram of cathode voltages of two sub-pixel devices of a single photon avalanche diode device according to an embodiment of the present application. Fig. 8 (b) illustrates waveforms of cathode voltages of the first sub-pixel device 410 and the second sub-pixel device 420, respectively, anodes of the first sub-pixel device 410 and the second sub-pixel device 420 are coupled to a first driving voltage, and cathodes thereof are connected in series with a quenching resistor, respectively, and then to a second driving voltage. Taking the first sub-pixel device as an example, when the first sub-pixel device is subjected to avalanche breakdown, under the partial pressure effect of the quenching resistor, the cathode voltage is firstly reduced and then increased.
Fig. 8 (c) is a schematic waveform diagram of output signals of two sub-pixel devices of a single photon avalanche diode device according to an embodiment of the present application. Fig. 8 (c) illustrates waveforms of output signals of the first and second sub-pixel devices 410 and 420, respectively, wherein the illustrated output signals of the first and second sub-pixel devices 410 and 420, respectively, are pulse outputs formed after cathode voltage changes of the first and second sub-pixel devices 410 and 420, respectively, pass through inverters, and may be referred to as a first inversion signal and a second inversion signal.
Fig. 8 (d) is a schematic waveform of an output signal of an and component and/or a component of a single photon avalanche diode device provided in an embodiment of the present application. As illustrated in fig. 8 (d), the first inverted signal and the second inverted signal may form two different output signals, the first detection signal and the second detection signal, through two logic components. As shown in fig. 8 (d), when one of the first inverted signal and the second inverted signal is at a high level, the first detection signal is at a high level, and its equivalent first photon detection efficiency is the sum of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device; when the first inverted signal and the second inverted signal are both high level, the second detection signal is high level, and the equivalent second photon detection efficiency is the product of the photon detection efficiencies of the first sub-pixel device and the second sub-pixel device.
Step S702: first detection photon data is determined according to the first detection signal.
Optionally, the first detected photon data represents the number of photons detected by the first circuit in each of a plurality of preset time intervals. The number of photons per each preset time interval is data statistically obtained based on all the light pulse emissions in the plurality of light pulse emissions.
Optionally, the first detection photon data may be determined based on the first detection signal by a time-correlated single photon counting method, that is, a histogram of the detection data is constructed by performing multiple repeated measurements on the single photon, and information of the first detection photon data may be represented in the histogram. Optionally, a plurality of light pulses are emitted according to a preset frequency, the number of photons detected by the first circuit in each preset time interval in a plurality of preset time intervals after a single emission of the light pulses is determined, and the sum of the number of photons detected in each preset time interval after a plurality of emission of the light pulses is counted to serve as first detected photon data. Wherein each bin in the histogram of the detected data corresponds to a predetermined time interval, the abscissa of the histogram is the predetermined time interval, and the ordinate of the histogram reflects the sum of the number of photons detected for each single predetermined time interval.
Specifically, the sum of the numbers of photons detected by the first circuit at the first preset time interval after each emission in the multiple emission light pulses may be counted in sequence, and the sum of the numbers of photons detected by the first circuit at the second preset time interval after each emission in the multiple emission light pulses may be counted until the sum of the numbers of photons detected by the last preset time interval after each emission in the multiple emission light pulses. In particular, the sum of the number of photons detected in the first preset time interval after the plurality of times of emission of the light pulses may comprise the sum of the number of photons detected in the first preset time interval after the first emission of the light pulses, the number of photons detected in the first preset time interval after the second emission of the light pulses until the number of photons detected in the first preset time interval after the last emission of the light pulses, and so on.
Step S703: and determining second detection photon data according to the second detection signal.
Optionally, the second detected photon data represents a number of photons detected by the second circuit in each of a plurality of preset time intervals. The number of photons per each preset time interval is data statistically obtained based on all the light pulse emissions in the plurality of light pulse emissions.
Optionally, the second detected photon data may be determined based on the second detected signal by a time-correlated single photon counting method, that is, a histogram of the detected data is constructed by performing multiple repeated measurements on the single photon, and information of the second detected photon data may be represented in the histogram. Optionally, a plurality of light pulses may be emitted according to a preset frequency, the number of photons detected by the second circuit in each preset time interval in a plurality of preset time intervals after a single emission of the light pulse is determined, and the sum of the number of photons detected in each preset time interval after all the light pulses are emitted in a plurality of times of light pulse emission is counted and used as the second detected photon data. Wherein each bin in the histogram of the detected data corresponds to a predetermined time interval, the abscissa of the histogram is the predetermined time interval, and the ordinate of the histogram reflects the sum of the number of photons detected for each single predetermined time interval.
Specifically, the sum of the number of photons detected by the second circuit at the first preset time interval after each emission in the multiple emission of the light pulse may be counted in sequence, and the sum of the number of photons detected by the second circuit at the second preset time interval after each emission in the multiple emission of the light pulse may be counted until the sum of the number of photons detected at the last preset time interval after each emission in the multiple emission of the light pulse. In particular, the sum of the number of photons detected in the first preset time interval after the plurality of times of emission of the light pulses may include the sum of the number of photons detected in the first preset time interval after the first time of emission of the light pulses, the number of photons detected in the first preset time interval after the second time of emission of the light pulses until the first preset time interval after the last time of emission of the light pulses, and so on.
Alternatively, the first detected photon data may be presented in the form of an or-component histogram, and the second detected photon data may be presented in the form of an or-component histogram.
Please refer to fig. 8 (e). Fig. 8 (e) is a schematic diagram of an output histogram of a single photon avalanche diode device according to an embodiment of the present application, where fig. 8 (e) illustrates the number of photons detected cumulatively by the first circuit after multiple pulse emissions in step S702, and the number of photons detected cumulatively by the second circuit after multiple pulse emissions in step S703.
Step S704: first distance information of the target object is determined based on the first detected photon data.
Alternatively, the first distance information of the target object may be determined based on the first detected photon data.
Step S705: second distance information of the target object is determined based on the second detected photon data.
Alternatively, second distance information of the target object may be determined based on the second detected photon data.
In steps S704 to S705, as an example, optionally, each preset time interval corresponds to a preset photon return time, that is, for the number of photons returned in each preset time interval, it is regarded as the number of photons returned by the preset photon return time in the calculation. Specifically, the preset photon return time may be the abscissa of the histogram as illustrated in fig. 8 (e) or fig. 9 (b) -9 (c); the ordinate is the photon number, and the ordinate information of each histogram can represent the photon number detected within a preset time interval corresponding to the preset photon return time.
As can be seen from the comparison of the two histograms of fig. 8 (e), the histogram for the same light intensity is more saturated than the histogram for the same light intensity, or the number of pulses output by the device is greater than the number of pulses output by the device.
Figure 9 (a) is a distance versus reflected light intensity diagram of a single photon avalanche diode device according to an embodiment of the present application; fig. 9 (b) and 9 (c) are schematic diagrams of output histograms of a plurality of detection distances of a single photon avalanche diode device according to an embodiment of the present application. Fig. 9 (b) and 9 (c) illustrate output histograms of a plurality of detection distances. As illustrated in fig. 9 (a), the reflected light intensity increases as the distance decreases.
As illustrated in fig. 9 (b) and 9 (c), when the detection distance is less than the third distance3, the output histogram is already in a single saturation state because the first photon detection efficiency of the first circuit containing the or component is high and the sampling rate is high. That is, as the detection distance continues to decrease, the number of photons increases, and the number of photons reflected on the histogram does not change, so that the actual number of photons cannot be represented. At this time, since the second photon detection efficiency of the second circuit including the and component is low, the sampling rate is low, and thus the output histogram is still in an unsaturated state.
When the detection distance is greater than distance3, the intensity of the reflected light is weak because the target distance is long, the shape of the output histogram of the first circuit containing the component gradually tends to the shape of the pulse envelope, the density of the histogram is higher than that of the background noise, and the target distance can be normally calculated through the histogram. However, the second circuit including the component submerges the histogram formed by the target return light in the background light noise due to the low sampling rate, and the target distance cannot be calculated from the histogram data.
Optionally, determining first distance information of the target object based on the first detected photon data may include: and determining first distance information of the target object based on the first detection photon data, the preset photon return time corresponding to the preset time interval of each first detection photon data and the precision of the time-to-digital conversion module. Determining second distance information of the target object based on the second detected photon data, including: and determining second distance information of the target object based on the second detection photon data, the preset photon return time corresponding to the preset time interval of each second detection photon data and the precision of the time-to-digital conversion module.
The first distance information or the second distance information may be determined by the following ranging equation:
wherein Binn is the nth preset photon return time, in is the detected photon data corresponding to the nth preset photon return time, and WTDC is the time-to-digital conversion module precision; when d is first distance information, the detection photon data is first detection photon data; and when d is the second distance information, the detection photon data is the second detection photon data.
Step S706: and determining the first distance information as the target distance information under the condition that the first distance information and/or the second distance information meet a first preset condition.
Step S707: and determining the second distance information as the target distance information under the condition that the first distance information and/or the second distance information meet a second preset condition.
In an alternative embodiment, the first preset condition may be greater than or equal to a preset distance, and the second preset condition may be less than the preset distance.
Three embodiments of step S706-step S707 are described below: firstly, when the first distance information and the second distance information both meet a first preset condition, determining the first distance information as target distance information; and when the first distance information and the second distance information both meet a second preset condition, determining the second distance information as target distance information. Second, when an average value of the first distance information and the second distance information satisfies a first preset condition, the first distance information is determined as target distance information, and when the average value satisfies a second preset condition, the second distance information is determined as target distance information. Thirdly, when the first distance information meets a first preset condition, determining the first distance information as target distance information; and when the first distance information meets a second preset condition, determining the second distance information as target distance information.
This is further explained below in connection with the ranging equations for the above. When the output histogram based on the OR component tends to be In a single saturation state, in +1, in +2 \8230;, 0, the ranging formula can be simplified as follows:
the distance measurement precision is only related to the precision of the time-to-digital conversion module. Assuming that the precision of the time-to-digital conversion module is 1ns, when the distance is too close, the distance measurement precision is 15cm, and the linearity of the distance measurement is deteriorated because the photon data cannot be accurately obtained. At this time, the output histogram based on the and component is not saturated, and the near target can be measured with high accuracy. Therefore, the detection signal output by the component is adopted to carry out distance measurement in a short distance, namely the second distance information is adopted as the target distance information, and the problem of low precision of short-distance measurement can be avoided.
At greater distances, the output histogram of the OR-component is denser than the background noise, while the output histogram of the AND-component is buried in the background light noise. Therefore, the detection signal output by the assembly or the long-distance measurement is adopted to carry out the distance measurement, namely the first distance information is adopted as the target distance information, and the problem of inaccurate long-distance measurement can be avoided.
Referring to fig. 10, fig. 10 is a schematic diagram of a ranging linearity of a ranging method according to an embodiment of the present disclosure. The abscissa of fig. 10 represents the actual distance, and the ordinate represents the measured distance. The solid line may represent ranging linearity determined based on the first distance information and the actual distance, and the dotted line may represent ranging linearity determined based on the second distance information and the actual distance. As illustrated in fig. 10, when the detected distance is equal to or greater than the preset distance, the first distance information may be used as the measurement result, whereas when the detected distance is less than the preset distance, the second distance information may be used as the measurement result.
According to the embodiment of the application, the first distance information can be obtained by obtaining the detection signal output by the OR gate, and the second distance information can be obtained by obtaining the detection signal output by the AND gate, so that the detection results of different photon detection efficiencies can be obtained; the distance measurement is carried out by combining the first distance information and the second distance information, so that the precision and the linearity of the short-distance measurement can be ensured, and the accuracy of the long-distance measurement is ensured.
Correspondingly, the application provides a range unit. Fig. 11 is a schematic structural diagram of a distance measuring device according to an embodiment of the present application. As illustrated in fig. 11, the ranging device 1100 is for the single photon avalanche diode device set forth above. The apparatus may include:
a transmitting module 1101 for transmitting a light pulse to the target object and detecting a first detection signal output by the first circuit and a second detection signal output by the second circuit;
a first determining module 1102, configured to determine first detection photon data according to the first detection signal; the first detection photon data represent the number of photons detected by the first circuit in each preset time interval in a plurality of preset time intervals;
a second determining module 1103, configured to determine second detected photon data according to the second detected signal; the second detected photon data comprises the photon number detected by the second circuit in each preset time interval;
a third determining module 1104 for determining first distance information of the target object based on the first detected photon data;
a fourth determining module 1105, configured to determine second distance information of the target object based on the second detected photon data;
a first distance module 1106, configured to determine the first distance information as target distance information when the first distance information and/or the second distance information satisfy a first preset condition;
a second distance module 1107, configured to determine the second distance information as the target distance information when the first distance information and/or the second distance information satisfy a second preset condition.
Optionally, each preset time interval corresponds to a preset photon return time, and the third determining module 1104 may be configured to: and determining first distance information of the target object based on the first detection photon data, the preset photon return time corresponding to the preset time interval of each first detection photon data and the precision of the time-to-digital conversion module.
It is to be noted that the device, circuit, radar, method, apparatus embodiments provided in the present application are based on the same inventive concept.
It is noted that the present specification provides the method steps as in the examples, but that more or fewer steps may be included based on routine or non-inventive labor. The order of steps recited in the embodiments is merely one manner of performing the steps in a multitude of sequences, and does not represent a unique order of performance.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (12)
1. A single photon avalanche diode device, comprising:
a substrate; the substrate includes a back surface and a front surface opposite the back surface;
an epitaxial layer 110 disposed on the front surface;
a P-type doped region 120, a PN junction doped region 130 and a first isolation region 140 disposed on the top of the epitaxial layer 110;
wherein an anode contact 150 is disposed in the P-type doped region 120;
the PN junction doping region 130 includes a first sub-PN junction doping region 131 and a second sub-PN junction doping region 132, and the first isolation region 140 is located between the first sub-PN junction doping region 131 and the second sub-PN junction doping region 132;
the first sub PN junction doping region 131 and the second sub PN junction doping region 132 are both provided with a cathode contact 160.
2. The single photon avalanche diode device according to claim 1, wherein the first sub PN junction doping region 131 and the second sub PN junction doping region 132 comprise a sub P-type doping region and a sub N-type doping region located below the sub P-type doping region.
3. The single photon avalanche diode device according to claim 1, wherein said first isolation region 140 is an STI trench formed using a shallow trench isolation, STI, process.
4. A single photon avalanche diode device according to claim 1, further comprising:
a second isolation region 170 disposed around the epitaxial layer 110; the second isolation region 170 is a DTI trench formed using a deep trench isolation DTI process.
5. A single photon avalanche diode device according to claim 1,
the cathode contact 160 of the first sub-PN junction doping region 131 is connected to the sum component 450 and the sum component 460, respectively, through the first inverter 430;
the cathode contact 160 of the second sub-PN junction doping region 132 is connected to the or element 450 and the and element 460, respectively, through a second inverter 440.
6. A single photon avalanche diode device according to claim 1 wherein said anode contact 150 is coupled to a first supply voltage terminal;
the cathode contact 160 of the first sub-PN junction doping region 131 is coupled to a second power supply voltage terminal through a first resistor 470; the cathode contact 160 of the second sub-PN junction doped region 132 is coupled to the second power supply voltage terminal through a second resistor 480.
7. A detection circuit for a single photon avalanche diode device, applied to a single photon avalanche diode device according to any one of claims 1 to 6, comprising:
a first circuit connecting the cathode contact 160 of the first sub PN junction doping region 131 through a first inverter 430 and or component 450, and connecting the cathode contact 160 of the second sub PN junction doping region 132 through a second inverter 440 and or component 450;
a second circuit connecting the cathode contact 160 of the first sub PN junction doping region 131 through a first inverter 430 and an and element 460, and connecting the cathode contact 160 of the second sub PN junction doping region 132 through a second inverter 440 and the and element 460.
8. A lidar characterized by comprising:
the transmitting unit is used for providing a transmitting beam which forms an echo beam after being reflected by a target object;
a receiving unit for receiving an echo light beam, the receiving unit comprising a single photon avalanche diode device according to any one of claims 1-6.
9. A method of fabricating a single photon avalanche diode device, comprising:
providing a substrate; the substrate includes a back surface and a front surface opposite the back surface;
forming an epitaxial layer 110 on the front surface of the substrate;
forming a first isolation region 140 on an end face of the epitaxial layer 110 away from the substrate using an STI process;
forming a P-type doped region 120 and a PN combination doped region 130 on the end surface of the epitaxial layer 110 far away from the substrate; the PN junction doping region includes a first sub PN junction doping region 131 and a second sub PN junction doping region 132, and the first isolation region 140 is located between the first sub PN junction doping region 131 and the second sub PN junction doping region 132;
forming a second isolation region 170 extending from the front surface of the substrate to an end surface of the epitaxial layer 110 away from the substrate using a DTI process;
forming an anode contact 150 within the P-type doped region 120;
a cathode contact 160 is formed within the first sub PN junction doping region 131 and the second sub PN junction doping region 132.
10. A method of driving a single photon avalanche diode device, applied to a single photon avalanche diode device according to any one of claims 1 to 6, the method comprising:
coupling the anode contact 150 to a first supply voltage terminal;
coupling the cathode contact 160 of the first sub PN junction doping region 131 and the cathode contact 160 of the second sub PN junction doping region 132 to a second power voltage terminal through quenching resistors, respectively;
outputting a first driving voltage to the first power supply voltage terminal;
outputting a second driving voltage to the second power supply voltage terminal.
11. A ranging method applied to a detection circuit of a single photon avalanche diode device according to claim 7, the method comprising:
emitting light pulses to a target object and detecting a first detection signal output by the first circuit and a second detection signal output by the second circuit;
determining first detection photon data according to the first detection signal; the first detection photon data represents the number of photons detected by the first circuit in each preset time interval in a plurality of preset time intervals;
determining second detection photon data according to the second detection signal; the second detection photon data represents the number of photons detected by the second circuit in each preset time interval;
determining first distance information of the target object based on the first detection photon data;
determining second distance information of the target object based on the second detected photon data;
determining the first distance information as target distance information under the condition that the first distance information and/or the second distance information meet a first preset condition;
and determining the second distance information as target distance information under the condition that the first distance information and/or the second distance information meet a second preset condition.
12. A ranging method as claimed in claim 11, characterized in that each of said predetermined time intervals corresponds to a predetermined photon return time,
the determining first distance information of the target object based on the first detected photon data includes:
and determining first distance information of the target object based on the first detection photon data, preset photon return time corresponding to the preset time interval where each first detection photon data is located and the precision of the time-to-digital conversion module.
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