CN115940814A - Terahertz voltage-controlled oscillator, communication equipment and communication system - Google Patents
Terahertz voltage-controlled oscillator, communication equipment and communication system Download PDFInfo
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- CN115940814A CN115940814A CN202211486356.1A CN202211486356A CN115940814A CN 115940814 A CN115940814 A CN 115940814A CN 202211486356 A CN202211486356 A CN 202211486356A CN 115940814 A CN115940814 A CN 115940814A
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The invention discloses a terahertz voltage-controlled oscillator, communication equipment and a communication system, and relates to the technical field of voltage-controlled oscillators, wherein the terahertz voltage-controlled oscillator comprises: a fundamental frequency oscillation circuit and a nonlinear buffer circuit, the fundamental frequency oscillation circuit generating a pair of differential fundamental frequency signals: the terahertz frequency band signal processing circuit comprises a first fundamental frequency signal and a second fundamental frequency signal, the nonlinear buffer circuit is connected with the fundamental frequency oscillation circuit, and the nonlinear buffer circuit performs nonlinear enhancement processing on the first fundamental frequency signal and the second fundamental frequency signal to generate a third harmonic signal of a terahertz frequency band. The terahertz frequency band harmonic generation device can generate a third harmonic signal of a terahertz frequency band, and the generated third harmonic signal has the characteristics of a certain tuning range, low phase noise, high output power and the like.
Description
Technical Field
The invention relates to the technical field of voltage-controlled oscillators, in particular to a terahertz voltage-controlled oscillator, communication equipment and a communication system.
Background
The submillimeter-wave terahertz (300 GHz-3 THz) can effectively provide larger transmission capacity and higher transmission rate, and can support next-generation wireless communication. The terahertz signal source is the basis and the premise of the terahertz wireless communication technology, and the stability of the whole communication transceiving system is directly influenced by the quality of performance indexes of the terahertz signal source.
The terahertz voltage-controlled oscillator is used as a common terahertz signal source, and an integrated circuit of the terahertz voltage-controlled oscillator is mainly realized by adopting a compound III-V process under a common condition. However, the use of III-V processes for integrated circuit mass fabrication is costly and bulky. With the rapid development of silicon-based processes, the size of transistors thereof continues to scale down. Therefore, it is becoming increasingly feasible and attractive to implement terahertz voltage controlled oscillators using silicon-based processes (e.g., biCMOS) integrated circuits, as compared to III-V processes.
But because the terahertz frequency is close to or greater than the maximum oscillation frequency f of the existing silicon-based process integrated circuit max The scheme of directly generating terahertz signals by adopting a fundamental frequency oscillator of a silicon-based process integrated circuit is difficult to realize.
Disclosure of Invention
The embodiment of the invention provides a terahertz voltage-controlled oscillator, communication equipment and a communication system, which aim to solve the technical problem that a terahertz signal is difficult to directly generate by a base frequency oscillator adopting a silicon-based process integrated circuit in the prior art.
In a first aspect, a terahertz voltage-controlled oscillator is provided, including:
a fundamental frequency oscillation circuit for generating a pair of differential fundamental frequency signals: a first base frequency signal and a second base frequency signal;
and the nonlinear buffer circuit is connected with the fundamental frequency oscillation circuit and is used for carrying out nonlinear enhancement processing on the first fundamental frequency signal and the second fundamental frequency signal so as to generate a third harmonic signal of a terahertz frequency band.
In some embodiments, the non-linear buffer circuit comprises a first capacitor, a second capacitor, a first transistor, a second transistor, a frequency-selective transformer, and a first bias voltage;
a first end of the first capacitor is connected with the fundamental frequency oscillation circuit to obtain the first fundamental frequency signal, and a second end of the first capacitor is connected with a first end of the first transistor and the first bias voltage;
a first end of the second capacitor is connected with the fundamental frequency oscillation circuit to obtain the second fundamental frequency signal, and a second end of the second capacitor is connected with a first end of the second transistor and the first bias voltage;
the second end of the first transistor and the second end of the second transistor are correspondingly connected with two ends of a primary coil of the frequency-selecting transformer, a center tap of the primary coil of the frequency-selecting transformer is connected with a power supply voltage, and a third end of the first transistor and a third end of the second transistor are connected and grounded;
and a first end of a secondary coil of the frequency-selective transformer is an output end of the third harmonic signal, and a second end of the secondary coil of the frequency-selective transformer is grounded.
In some embodiments, a first transmission line is provided between the first terminal of the first transistor and the first bias voltage;
a second transmission line is arranged between the first end of the second transistor and the first bias voltage.
In some embodiments, a third transmission line is arranged between the second end of the first transistor and the primary coil of the frequency-selective transformer;
and a fourth transmission line is arranged between the second end of the second transistor and the primary coil of the frequency-selecting transformer.
In some embodiments, the fundamental frequency oscillation circuit includes a first inductor, a second inductor, a third capacitor, a fourth capacitor, a third transistor, a fourth transistor, and a second bias power supply;
the first end of the first inductor and the first end of the second inductor are both connected with a control voltage;
the second end of the first inductor is connected with the first end of the first capacitor and the first end of the third capacitor;
the second end of the second inductor is connected with the first end of the second capacitor and the first end of the fourth capacitor;
a second terminal of the third capacitor is connected with a first terminal of the fourth transistor and the second bias voltage;
a second end of the fourth capacitor is connected with a first end of the third transistor and the second bias voltage;
and the third end of the third transistor and the third end of the fourth transistor are connected and grounded.
In some embodiments, a fifth transmission line is provided between the first end of the third transistor and the second bias voltage;
a sixth transmission line is arranged between the first end of the fourth transistor and the second bias voltage.
In some embodiments, the first transistor, the second transistor, the third transistor, and the fourth transistor are transistors.
In some embodiments, the first transistor, the second transistor, the third transistor, and the fourth transistor are MOS transistors.
In a second aspect, a communication device is provided, which includes the aforementioned terahertz voltage-controlled oscillator.
In a third aspect, a communication system is provided, comprising at least one of the aforementioned communication devices.
The technical scheme provided by the invention has the beneficial effects that:
the embodiment of the invention provides a terahertz voltage-controlled oscillator, communication equipment and a communication system, wherein the terahertz voltage-controlled oscillator is provided with a fundamental frequency oscillation circuit and a nonlinear buffer circuit, and the nonlinear buffer circuit can perform nonlinear enhancement processing on a pair of differential fundamental frequency signals generated by the fundamental frequency oscillation circuit so as to generate a third harmonic signal of a terahertz frequency band.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a circuit diagram of a terahertz voltage-controlled oscillator according to an embodiment of the present invention;
fig. 2 is a tuning curve diagram of an output frequency of a terahertz voltage-controlled oscillator according to an embodiment of the present invention;
fig. 3 is a phase noise performance diagram of an output frequency of a thz voltage-controlled oscillator according to an embodiment of the present invention;
fig. 4 is a diagram of an S of a frequency-selecting transformer of a terahertz voltage-controlled oscillator according to an embodiment of the present invention 21 A parametric property map.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The embodiment of the invention provides a terahertz voltage-controlled oscillator, which can solve the technical problem that the existing fundamental frequency oscillator adopting a silicon-based process integrated circuit is difficult to directly generate terahertz signals.
Referring to fig. 1, an embodiment of the present invention provides a terahertz voltage-controlled oscillator, including: a base frequency oscillation circuit and a nonlinear buffer circuit.
The fundamental frequency oscillation circuit generates a pair of differential fundamental frequency signals: first baseband signal V (f) 0 Plus and the second fundamental frequency signal V (f) 0 -). The nonlinear buffer circuit is connected with the fundamental frequency oscillation circuit, and the nonlinear buffer circuit is used for buffering the first fundamental frequency signal V (f) 0 (+) and the second fundamental frequency signal V (f) 0 -) is subjected to nonlinear enhancement processing to generate a third harmonic signal V (3 f) of a terahertz frequency band 0 )。
The terahertz voltage-controlled oscillator in the embodiment of the invention is provided with a fundamental frequency oscillation circuit and a non-oscillatorAnd the nonlinear buffer circuit can perform nonlinear enhancement processing on a pair of differential fundamental frequency signals generated by the fundamental frequency oscillation circuit so as to generate a third harmonic signal of a terahertz frequency band. Alternatively, it can be appreciated that embodiments of the present invention operate from below the maximum oscillation frequency f of silicon-based process integrated circuits max Extracting a signal higher than f from the fundamental frequency signal max The third harmonic signal of (2) generates a signal of a terahertz frequency band. In addition, the terahertz voltage-controlled oscillator in the embodiment of the invention has the advantages of simple structure, easy realization, small size and low cost, and has wide application prospect in an on-chip terahertz signal source circuit.
As an alternative implementation, in an embodiment of the present invention, the nonlinear buffer circuit includes a first capacitor C 1 A second capacitor C 2 A first transistor Q 1 A second transistor Q 2 Frequency-selective transformer T and first bias voltage V b1 . Wherein the transistor Q 1 And the second transistor Q 2 Which may be a transistor or a MOS transistor, as exemplified below by a transistor.
The first capacitor C 1 Is connected to the fundamental frequency oscillation circuit to obtain the first fundamental frequency signal V (f) 0 (+) said first capacitor C 1 And the second terminal of the first transistor Q 1 And said first bias voltage V b1 And (4) connecting.
The second capacitor C 2 Is connected to the fundamental frequency oscillation circuit to obtain the second fundamental frequency signal V (f) 0 -) of said second capacitor C 2 And the second terminal of the second transistor Q 2 And said first bias voltage V b1 And (4) connecting.
The first transistor Q 1 And the second terminal (collector) of the second transistor Q 2 Is correspondingly connected with two ends of a primary coil of the frequency-selecting transformer T, and a central tap of the primary coil of the frequency-selecting transformer T is connected with a power supply voltage V DD Connected, the first transistor Q 1 And said second transistor Q 2 Is connected and grounded to the third terminal (emitter).
The first end of the secondary coil of the frequency-selecting transformer T is the third harmonic signal V (3 f) 0 ) And a second end of the secondary coil of the frequency-selective transformer T is grounded.
In particular, referring to fig. 1, the first capacitance C 1 And said second capacitance C 2 A pair of differential base frequency signals V (f) with large output swing 0 (+) and V (f) 0 -) are respectively coupled to the first transistors Q 1 And the second transistor Q 2 The base of the differential pair transistor. A first bias voltage V b1 At the first capacitor C 1 And said second capacitance C 2 Under the action of isolating direct current, is the first transistor Q 1 And the second transistor Q 2 The base of the differential pair tube provides bias voltage, and the power voltage V DD Making the first transistor Q 1 And the second transistor Q 2 Reaching proper bias condition for the first base frequency signal V (f) 0 (+) and the second fundamental frequency signal V (f) 0 -) to obtain the third harmonic component of the maximum power, the frequency-selecting transformer T extracts the third harmonic component and couples to the first end of the secondary coil of the frequency-selecting transformer T to output a third harmonic signal V (3 f) 0 ). Optionally, consider the requirement of the test that the first end of the secondary of the frequency selective transformer T perform a 50 Ω impedance match with the test probe at the target frequency.
As an alternative implementation, in one inventive embodiment, the first transistor Q 1 And said first bias voltage V b1 A first transmission line TL is arranged between 1 。
The second transistor Q 2 And said first bias voltage V b1 A second transmission line TL is arranged between 2 。
In particular, referring to fig. 1, the first bias voltage V b1 By symmetrically arranged first transmission lines TL 1 A second transmission line TL 2 Can effectively be said first transistor Q 1 And a stationThe second transistor Q 2 The base of the differential pair provides a bias voltage.
As an alternative implementation, in one inventive embodiment, the first transistor Q 1 And a third transmission line TL is arranged between the second terminal of the frequency-selective transformer T and the primary coil of the frequency-selective transformer T 3 。
The second transistor Q 2 And a fourth transmission line TL is arranged between the second end of the frequency-selective transformer T and the primary coil of the frequency-selective transformer T 4 。
In particular, referring to fig. 1, the third transmission line TL 3 And the fourth transmission line TL 4 Has the effect of completing said first transistor Q 1 A second transistor Q 2 And the loss of the third harmonic component reaching the primary coil of the frequency-selecting transformer T is ensured to be as small as possible by conjugate matching with the frequency-selecting transformer T, and the terahertz signal with high output power is output.
As an alternative implementation, in an embodiment of the invention, the fundamental frequency oscillation circuit includes a first inductor L 1 A second inductor L 2 A third capacitor C 3 A fourth capacitor C 4 A third transistor Q 3 A fourth transistor Q 4 And a second bias power supply V b2 。
The first inductor L 1 And said second inductance L 2 Are all connected with a control voltage V ctrl 。
The first inductor L 1 And the second terminal of the first capacitor C 1 And said third capacitor C 3 Is connected to the first end of the first housing.
The second inductor L 2 And the second terminal of the second capacitor C 2 And said fourth capacitor C 4 Is connected to the first end of the first housing.
The third capacitor C 3 And the second terminal of the fourth transistor Q 4 And said second bias voltage V b2 Connecting;
the fourth capacitor C 4 And the second terminal of the third transistor Q 3 And the second bias voltageV b2 And (4) connecting.
The third transistor Q 3 And said fourth transistor Q 4 The third terminal of the transformer is connected and grounded.
In particular, referring to fig. 1, the third transistor Q 3 And the fourth transistor Q 4 Forming a cross-coupled structure, the third transistor Q 3 And the fourth transistor Q 4 The parasitic capacitance of the cross-coupled pair acts as a variable capacitance of the fundamental frequency oscillation circuit. The first inductor L 1 A second inductor L 2 And a third transistor Q 3 And a fourth transistor Q 4 The parasitic capacitances of the cross-coupled pairs jointly form a resonant circuit, and determine the oscillation frequency of the fundamental frequency oscillation circuit. Control voltage V ctrl On the one hand, as the power supply voltage of the fundamental frequency oscillation circuit, the third transistor Q is driven 3 And the fourth transistor Q 4 On the other hand, the third transistor Q in the resonant circuit is regulated as a control voltage 3 And the fourth transistor Q 4 The parasitic capacitance of the cross-coupled pair is used for realizing parasitic tuning to reach a control voltage V ctrl The control of the oscillation frequency can realize frequency tuning with a certain bandwidth. Said third capacitance C as a feedback factor 3 And said fourth capacitance C 4 Has the function of isolating direct current. The quality factor of the traditional varactor can be reduced along with the increase of frequency, so that the overall quality factor of the resonant circuit is reduced.
As an alternative implementation, in an embodiment of the invention, the third transistor Q 3 And said second bias voltage V b2 A fifth transmission line TL is arranged between 5 。
The fourth transistor Q 4 And said second bias voltage V b2 A sixth transmission line TL is arranged between 6 。
Specifically, referring to fig. 1, the fifth transmission line TL of the embodiment of the present invention is symmetrically disposed 5 And a sixth transmission line TL 6 Forming a DC voltage bias structure, a second bias voltage V b2 Through the fifth transmission line TL 5 And the sixth transmission line TL 6 To the third transistor Q 3 And the fourth transistor Q 4 Cross-coupling bases of the pair transistors to make the third transistor Q 3 And the fourth transistor Q 4 Exhibiting a linear behavior. At this time, the fundamental frequency oscillation circuit works in a C-type state, so that the output swing of the differential fundamental frequency signal can be increased, and the phase noise can be further improved.
The following is to control the voltage V ctrl The examples of the present invention are further illustrated with a change from 0.5 to 2V.
Referring to FIG. 2, when the voltage V is controlled ctrl Third harmonic signal V (3 f) output when changing from 0.5 to 2V 0 ) The frequency of (2) is 304.3-320 GHz, the tuning range is 15.7GHz, and the relative bandwidth is 5.03%. The embodiment of the invention can realize the terahertz signal of 300GHz or above with a certain tuning range.
FIG. 3 shows the control voltage V ctrl When the output phase noise performance diagram is 1.4V, when the output frequency is 318GHz, the phase noise at the frequency offset of 1MHz is-82.2 dBc/Hz, the phase noise at the frequency offset of 10MHz is-103.3 dBc/Hz, and low phase noise is shown in the terahertz frequency band.
FIG. 4 is a diagram of the frequency-selective transformer S according to the embodiment of the present invention 21 Parametric characteristic diagram at fundamental frequency f 0 Insertion loss | S at =106GHz 21 L is 34dB and the third harmonic 3f at the target frequency 0 Insertion loss | S at =318GHz 21 And | is about 7.49 dB. The insertion loss of the fundamental frequency is much larger than that of the third harmonic wave, and the frequency-selecting transformer T in the embodiment of the invention can attenuate the fundamental frequency signal and extract the third harmonic wave signal with the maximum power at the same time with lower loss.
The embodiment of the invention also provides communication equipment which comprises the terahertz voltage-controlled oscillator.
The embodiment of the present invention further provides a communication system, which includes at least one of the foregoing communication devices.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present invention. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
It is to be noted that, in the present invention, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present invention, which enable those skilled in the art to understand or practice the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A terahertz voltage-controlled oscillator is characterized by comprising:
a fundamental frequency oscillation circuit for generating a pair of differential fundamental frequency signals: a first baseband signal and a second baseband signal;
and the nonlinear buffer circuit is connected with the fundamental frequency oscillation circuit and is used for carrying out nonlinear enhancement processing on the first fundamental frequency signal and the second fundamental frequency signal so as to generate a third harmonic signal of a terahertz frequency band.
2. The terahertz voltage-controlled oscillator of claim 1, wherein:
the nonlinear buffer circuit comprises a first capacitor, a second capacitor, a first transistor, a second transistor, a frequency-selecting transformer and a first bias voltage;
a first end of the first capacitor is connected with the fundamental frequency oscillation circuit to obtain the first fundamental frequency signal, and a second end of the first capacitor is connected with a first end of the first transistor and the first bias voltage;
a first end of the second capacitor is connected with the fundamental frequency oscillation circuit to obtain the second fundamental frequency signal, and a second end of the second capacitor is connected with a first end of the second transistor and the first bias voltage;
a second end of the first transistor and a second end of the second transistor are correspondingly connected with two ends of a primary coil of the frequency-selecting transformer, a center tap of the primary coil of the frequency-selecting transformer is connected with a power supply voltage, and a third end of the first transistor and a third end of the second transistor are connected and grounded;
and a first end of a secondary coil of the frequency-selective transformer is an output end of the third harmonic signal, and a second end of the secondary coil of the frequency-selective transformer is grounded.
3. The terahertz voltage-controlled oscillator of claim 2, wherein:
a first transmission line is arranged between the first end of the first transistor and the first bias voltage;
a second transmission line is arranged between the first end of the second transistor and the first bias voltage.
4. The terahertz voltage-controlled oscillator according to claim 2, wherein:
a third transmission line is arranged between the second end of the first transistor and the primary coil of the frequency-selective transformer;
and a fourth transmission line is arranged between the second end of the second transistor and the primary coil of the frequency-selecting transformer.
5. The terahertz voltage-controlled oscillator of claim 4, wherein:
the fundamental frequency oscillation circuit comprises a first inductor, a second inductor, a third capacitor, a fourth capacitor, a third transistor, a fourth transistor and a second bias power supply;
the first end of the first inductor and the first end of the second inductor are both connected with a control voltage;
the second end of the first inductor is connected with the first end of the first capacitor and the first end of the third capacitor;
the second end of the second inductor is connected with the first end of the second capacitor and the first end of the fourth capacitor;
a second end of the third capacitor is connected with a first end of the fourth transistor and the second bias voltage;
a second end of the fourth capacitor is connected with a first end of the third transistor and the second bias voltage;
and the third end of the third transistor and the third end of the fourth transistor are connected and grounded.
6. The terahertz voltage-controlled oscillator of claim 5, wherein:
a fifth transmission line is arranged between the first end of the third transistor and the second bias voltage;
and a sixth transmission line is arranged between the first end of the fourth transistor and the second bias voltage.
7. The terahertz voltage-controlled oscillator of claim 5, wherein:
the first transistor, the second transistor, the third transistor, and the fourth transistor are transistor transistors.
8. The terahertz voltage-controlled oscillator of claim 5, wherein:
the first transistor, the second transistor, the third transistor, and the fourth transistor are MOS transistors.
9. A communication device comprising the terahertz voltage-controlled oscillator of any one of claims 1 to 8.
10. A communication system, characterized in that it comprises at least one communication device according to claim 9.
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| CN202211486356.1A CN115940814A (en) | 2022-11-24 | 2022-11-24 | Terahertz voltage-controlled oscillator, communication equipment and communication system |
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| CN202211486356.1A CN115940814A (en) | 2022-11-24 | 2022-11-24 | Terahertz voltage-controlled oscillator, communication equipment and communication system |
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