CN115938969A - Epitaxial layer film quality detection method - Google Patents
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Abstract
The invention discloses a film quality detection method of an epitaxial layer, which comprises the following steps: s1, providing a processing chamber and a substrate; s2, performing an epitaxial process, and depositing at least two tested epitaxial layers on the substrate, wherein the tested epitaxial layers comprise dopants, and the concentrations of the dopants contained in the different tested epitaxial layers are different; and S3, ending the epitaxial process, and detecting the film quality of the detected epitaxial layer through a measuring device. The detection method can realize the film quality detection of the concentration and the growth rate of the dopant on a plurality of epitaxial layers to be detected on a single wafer, greatly shortens the detection period, reduces the production cost and improves the working efficiency.
Description
Technical Field
The invention belongs to the field of detection of semiconductor epitaxial layer films, and particularly relates to a film quality detection method of an epitaxial layer.
Background
The epitaxial process refers to growing an epitaxial layer on the semiconductor substrate, wherein the epitaxial layer has the same lattice arrangement with the semiconductor substrate. In order to improve the electrical performance of a semiconductor device, impurities are usually doped during epitaxial growth, and the epitaxial process can be divided into a homoepitaxial process and a heteroepitaxial process according to the difference between the material of a semiconductor substrate and the material of an epitaxial layer. Existing epitaxial layer doping is primarily the deposition of semiconductor precursors and dopant precursors onto the substrate surface by heating the substrate to a desired temperature.
The growth of the epitaxial layer film is a key process and has important influence on the quality of the manufactured device. In the epitaxial process, the quality of the deposited epitaxial layer is generally required to be detected, so as to obtain the epitaxial layer meeting the production requirement. Experimental conditions to be examined include the growth rate, dopant concentration, resistivity, etc. of the epitaxial layer.
However, in the prior art, only one epitaxial layer can be grown on a Si-based substrate each time, so that only one experimental condition can be verified, resulting in long test period, long experimental verification time and high cost.
Therefore, a method for detecting the quality of an epitaxial layer film, which can shorten the test period, ensure the data accuracy and reduce the cost, is needed.
Disclosure of Invention
The invention aims to overcome the defects that the test period is long and the cost is high because only one experimental condition can be verified when one epitaxial layer grows on the surface of the existing substrate every time.
In order to achieve the above object, the present invention provides a method for detecting the film quality of an epitaxial layer, comprising the steps of:
s1, providing a processing chamber and a substrate;
s2, performing an epitaxial process, and depositing at least two tested epitaxial layers on the substrate, wherein the tested epitaxial layers comprise dopants, and the concentrations of the dopants contained in different tested epitaxial layers are different;
and S3, finishing the epitaxial process, and detecting the film quality of the detected epitaxial layer through a measuring device.
Optionally, in step S2, a spacer layer is deposited on the substrate, and then at least two epitaxial layers to be tested are deposited.
Optionally, in step S2, before depositing the epitaxial layer to be tested, a spacer layer is deposited.
Optionally, the spacer layer and the epitaxial layer to be tested are deposited with different materials.
Optionally, the deposition material and deposition process of the spacer layer are the same between different spacer layers.
Optionally, in step S2, the farther from the substrate, the lower the dopant concentration of the epitaxial layer under test.
Optionally, in step S2, depositing the epitaxial layer to be tested specifically includes: introducing process gas into the processing chamber and depositing, wherein the process gas comprises deposition gas and a dopant; the deposition gas comprises at least one group IVA semiconductor precursor and the dopant comprises at least one group IIIA dopant precursor or a group VA dopant precursor.
Optionally, the process gas further comprises an etching gas.
Optionally, the group IVA semiconductor precursor comprises monosilane (SiH) 4 ) Disilane (Si) 2 H 6 ) Trisilane (Si) 3 H 8 ) Butyl silane (Si) 4 H 10 ) Isoxysilane (Si) 5 H 12 ) Neopentasilane (Si) 5 H 12 ) Dichlorosilane (SiH) 2 Cl 2 ) Trichlorosilane (SiHCl) 3 ) Germyle (GeH) 4 ) Digermane (Ge) 2 H 6 ) Germanium trisilane (Ge) 3 H 8 ) Methylsilane (CH) 3 -SiH 3 ) Any one or a combination of any two or more of them.
Optionally, the group IIIA dopant precursor comprises Borane (BH) 3 ) Diborane (B) 2 H 6 ) Boron trichloride (BCl) 3 ) Boron bromide (BBr) 3 ) Any one or a combination of any two or more of aluminum (Al), gallium (Ga), and indium (In).
Optionally, the group VA dopant precursor comprises any one of phosphide or arsenide or a combination of any two or more thereof.
Optionally, the phosphide comprises at least Phosphane (PH) 3 ) Phosphorus chloride (PCl) 3 ) Phosphorus bromide (PBr) 3 ) The arsenide at least comprises arsine (AsH) 3 ) Arsenic trichloride (AsCl) 3 )。
Optionally, the etching gas comprises chlorine gas (Cl) 2 ) Hydrochloric acid (HCl), carbon tetrachloride (CCl) 4 ) Any one of them.
Optionally, in step S2, depositing the spacer layer specifically includes: introducing a spacer layer process gas into the processing chamber and depositing, wherein the spacer layer process gas contains silicon germanium carbide (Si) 1-x-y Ge x C y ) Silicon germanide (Si) 1-x Ge x ) Germanium tin (Ge) 1-x Sn x ) Germanium-silicon-tin (Ge) 1-x-y Si x Sn y ) Germanium silicon tin carbide (Ge) 1-x-y Si x Sn y C x ) Silicon tin (Si) 1-x Sn x ) Silicon tin carbide (Si) 1-x-y Sn x C y ) Silicon carbide (Si) 1-x C x ) Wherein x is more than 0 and less than 1, y is more than 0 and less than 1, and x + y is more than 0 and less than 1.
Optionally, the measuring device is at least one of Secondary Ion Mass Spectrometry (SIMS) and Transmission Electron Microscopy (TEM).
Optionally, in step S2, the method further includes: and carrying out high-temperature treatment on the substrate to remove the oxide on the surface of the substrate, wherein the high-temperature treatment is carried out before the epitaxial process.
The invention has the beneficial effects that:
(1) The multi-layer epitaxial layer to be tested can grow on the single-chip substrate, the dopant concentration of different epitaxial layers to be tested is different, various experimental conditions such as the dopant concentration and the growth rate of the epitaxial layer film can be detected simultaneously by using the multiple epitaxial layers to be tested on the single-chip substrate, the testing time is greatly shortened, the measuring cost is reduced, and the working efficiency is improved. Further, the doping concentration of the epitaxial layer to be detected is lower as the epitaxial layer is farther away from the substrate, so that the detection result can be more accurate.
(2) An undoped epitaxial layer can be deposited between every two tested epitaxial layers to serve as a spacing layer to separate the tested epitaxial layers, and the deposition materials and the deposition processes of all the spacing layers are the same. The epitaxial layer to be detected can be distinguished when the film quality detection is carried out on the epitaxial layer to be detected. Growing the spacer layer between different epitaxial layers to be tested makes the test result more accurate.
Drawings
Fig. 1 is a flowchart of a method for detecting film quality of an epitaxial layer according to the present invention.
Fig. 2 is a schematic structural view of an epitaxial layer in embodiment 1 of the present invention.
Fig. 3 is a schematic structural diagram of an epitaxial layer in embodiment 2 of the present invention.
FIG. 4 is a graph showing the results of secondary ion mass spectrometry in example 1.
FIG. 5 is a diagram showing the results of the transmission electron microscope of example 2.
FIG. 6 is a graph showing the results of secondary ion mass spectrometry in example 2.
Wherein, 1-a spacer layer, 2-a first epitaxial layer to be tested, and 3-a second epitaxial layer to be tested.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
When numerical ranges are given in the examples, it is understood that both endpoints of each of the numerical ranges and any value therebetween can be selected unless the invention otherwise indicated. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In addition to the specific methods, devices, and materials used in the examples, any methods, devices, and materials similar or equivalent to those described in the examples may be used in the practice of the invention in addition to the specific methods, devices, and materials used in the examples, in keeping with the knowledge of one skilled in the art and with the description of the invention.
In the prior art, the film quality detection of the epitaxial layer is usually to deposit a layer of epitaxial layer doped with a dopant precursor on a substrate, and then to detect experimental conditions such as growth rate, dopant concentration, resistivity and the like of the deposited epitaxial layer. The method generally has accurate test result and clear interface, but has the defects of long detection time, low efficiency and high cost because only one experimental condition can be detected at one time.
In order to solve the problem, the invention discloses a film quality detection method of an epitaxial layer.
After the epitaxial process is finished, a plurality of measured epitaxial layers grown on the substrate are obtained, and the film quality of the measured epitaxial layers is measured by using a measuring device, such as a Secondary Ion Mass Spectroscopy (SIMS) and a Transmission Electron Microscope (TEM), for example, the dopant concentration and the growth rate of the measured epitaxial layer film are detected, so that a plurality of experimental conditions can be measured simultaneously, the test period is greatly shortened, and the production cost is reduced. The principle of the secondary ion mass spectrometry is that a target is continuously bombarded by a primary ion beam, so that an atomic layer on the surface of the target is sputtered, positive ions (clusters), negative ions (clusters), neutral particles, photons and the like are sputtered, and charged particles with specific charge-to-mass ratios are collected to obtain surface element information to be analyzed.
As shown in fig. 1, the present invention provides a method for detecting the film quality of an epitaxial layer, comprising the following steps:
s1, a processing chamber and a substrate are provided.
Providing a substrate for the deposition and growth of subsequent materials to produce uniform and well-characterizedThe initial surface, in some embodiments, also provides a precleaning chamber, which contains a high temperature treatment step on the substrate to remove oxide from the surface of the substrate, and an epitaxial layer may then be formed on the surface of the substrate. Hydrogen (H) may be used 2 ) And nitrogen (N) 2 ) And carrying out high-temperature treatment, and exposing the substrate to the gas to remove the oxide layer from the surface of the substrate, wherein the high temperature is 750-1200 ℃.
In this embodiment, the processing chamber is used to perform an epitaxial process.
S2, performing an epitaxial process, and depositing at least two tested epitaxial layers on the substrate, wherein the tested epitaxial layers comprise dopants, and the concentrations of the dopants contained in the different tested epitaxial layers are different.
And placing the substrate in the processing chamber to carry out an epitaxial process. In order to facilitate the film quality detection of a plurality of epitaxial layers to be detected on a single substrate at the same time, at least two epitaxial layers to be detected are deposited on the substrate. The process for depositing the epitaxial layer to be detected specifically comprises the following steps: introducing process gas into the processing chamber and depositing, wherein the process gas comprises deposition gas and a dopant; the deposition gas contains at least one group IVA semiconductor precursor and the dopant contains at least one group IIIA dopant precursor or group VA dopant precursor, using doping techniques whereby the electrical properties of the device can be altered.
The group IVA semiconductor precursor comprises monosilane (SiH) 4 ) Disilane (Si) 2 H 6 ) Trisilane (Si) 3 H 8 ) Butyl silane (Si) 4 H 10 ) Isovalerylsilane (Si) 5 H 12 ) Neopentasilane (Si) 5 H 12 ) Dichlorosilane (SiH) 2 Cl 2 ) Trichlorosilane (SiHCl) 3 ) Germyle (GeH) 4 ) Digermane (Ge) 2 H 6 ) And propylgermane (Ge) 3 H 8 ) Methylsilane (CH) 3 -SiH 3 ) Any one or a combination of any two or more of them.
The group IIIA dopant precursor comprises Borane (BH) 3 ) Boron and boronAlkane (B) 2 H 6 ) Boron trichloride (BCl) 3 ) Boron bromide (BBr) 3 ) Any one or a combination of any two or more of aluminum (Al), gallium (Ga), and indium (In).
The VA group dopant precursor contains any one or combination of any two or more of phosphide and arsenide, and the phosphide at least contains Phosphane (PH) 3 ) Phosphorus chloride (PCl) 3 ) Phosphorus bromide (PBr) 3 ) The arsenide at least comprises arsine (AsH) 3 ) Arsenic trichloride (AsCl) 3 )。
In some embodiments, in step S2, the process gas further comprises an etching gas, and the etching gas is used for providing selectivity. The etching gas in the present invention contains chlorine (Cl) 2 ) Hydrochloric acid (HCl), carbon tetrachloride (CCl) 4 ) Any one of them.
In some embodiments, a spacer layer may be deposited on the substrate to facilitate measurement of the epitaxial layer under test and thereby to improve the accuracy of the measurement data. The deposition material used for depositing the spacing layer is different from the deposition material used for depositing the epitaxial layer to be tested, and the deposition spacing layer specifically comprises the following steps: introducing a spacer layer process gas into the processing chamber and depositing, wherein the spacer layer process gas contains silicon germanium carbide (Si) 1-x-y Ge x C y ) Silicon germanide (Si) 1-x Ge x ) Germanium tin (Ge) 1-x Sn x ) Germanium-silicon-tin (Ge) 1-x- y Si x Sn y ) Germanium silicon tin carbide (Ge) 1-x-y Si x Sn y C x ) Silicon tin (Si) 1-x Sn x ) Silicon tin carbide (Si) 1-x-y Sn x C y ) Silicon carbide (Si) 1-x C x ) Wherein x is more than 0 and less than 1, y is more than 0 and less than 1, and x + y is more than 0 and less than 1. When the epitaxial layer to be measured is measured by the measuring device from top to bottom, the spacing layer and the epitaxial layer to be measured can be obviously distinguished from each other by the measuring result because the deposition material and the deposition process of the spacing layer are different from those of the epitaxial layer to be measured, and the phenomenon that the measured epitaxial layers adjacent to the spacing layer are confused in value because of the similar measured values and cannot be distinguished in measurement can be preventedThe value belongs to which epitaxial layer is measured. In some embodiments, in order to ensure uniformity of the spacer layer, it is easier to distinguish the spacer layer, and the deposition material and deposition process of the spacer layer are the same between different spacer layers.
In some embodiments, in order to reduce the measurement error of the measurement device on the measured epitaxial layer from top to bottom, the farther from the substrate, the lower the dopant concentration of the measured epitaxial layer is, so as to prevent the measurement device (e.g., a secondary ion mass spectrometry device) from measuring from the upper measured epitaxial layer from the upper layer, and the higher the dopant concentration of the upper layer from interfering with the lower measured epitaxial layer.
And S3, finishing the epitaxial process, and detecting the film quality of the detected epitaxial layer through a measuring device.
The following description will be given with reference to specific examples.
Example 1
The description will be made by taking as an example the growth of at least two epitaxial layers to be tested on a substrate, as shown in fig. 2.
The growth process of the epitaxial layer to be detected by adopting the film quality detection method of the epitaxial layer is as follows:
1) A processing chamber and substrate are provided.
2) The substrate is subjected to a high temperature treatment using hydrogen and nitrogen:
hydrogen (H) is turned on 2 ) And nitrogen (N) 2 ) The gas source exposes the Si-based substrate to gas, raises the temperature of the Si-based substrate in the pre-cleaning cavity, and carries out high-temperature treatment on the Si-based substrate at the temperature of 750-1200 ℃ so as to remove an oxide layer on the surface of the Si-based substrate; the Si-based substrate is kept at a deposition temperature of 300-900 ℃, process parameters such as flow, pressure and the like required by deposition are stabilized, and the pressure is kept at 5-50 Torr.
3) Transferring the Si-based substrate from the precleaning chamber to a processing chamber, and introducing a process gas silicide (Si) into the processing chamber 1-x Ge x ) Firstly, depositing a spacer layer 1 on the surface of a Si-based substrate, wherein the spacer layer 1 is an undoped epitaxial layer; continuing to introduce monosilane (SiH), a group IVA semiconductor precursor, into the process chamber 4 ) And disilane (Si) 2 H 6 ) Dopant diborane (B) 2 H 6 ) And phosphorus bromide (PBr) 3 ) Etching gas hydrochloric acid (HCl), and growing a first epitaxial layer 2 to be tested, i.e. a doped epitaxial layer, outside the spacer layer 1.
4) And continuously growing a second epitaxial layer 3 to be tested on the surface of the first epitaxial layer 2 to be tested, wherein only the doping concentrations of the second epitaxial layer 3 are different, and other process parameters are the same, as shown in fig. 2, and the doping concentration of the first epitaxial layer 2 to be tested is greater than that of the second epitaxial layer 3 to be tested.
5) And closing the introduced etching gas, the IVA semiconductor precursor and the dopant, and purging for 5-50 s.
6) And (4) finishing the whole process, and respectively detecting the dopant concentration and the growth rate of the prepared thin films of the first epitaxial layer to be detected 2 and the second epitaxial layer to be detected 3 by using a measuring device (such as a secondary ion mass spectrum and a transmission electron microscope).
As shown in fig. 2, in this example, a spacer layer 1 containing no dopant, a first epitaxial layer 2 to be measured on which a first dopant concentration is deposited, and a second epitaxial layer 3 to be measured on which a second dopant concentration is deposited are grown in this order from the bottom to the top of the Si-based substrate. And respectively detecting the film quality of the epitaxial layer to be detected by using a secondary ion mass spectrometry device and a transmission electron microscope to obtain a measurement value.
However, in this embodiment, the effect is not good when the difference between the doping concentrations of the first epitaxial layer 2 to be tested and the second epitaxial layer 3 to be tested is not large (5%), and is even better when the doping concentration is larger than 5%. As shown in fig. 4, the result of the secondary ion mass spectrometry cannot distinguish the first epitaxial layer 2 to be tested from the second epitaxial layer 3 to be tested.
The method has the advantages that the film quality of the tested epitaxial layer with large concentration difference of the deposited dopants can be simultaneously detected, the testing time is shortened, the experimental efficiency is improved, and the cost is reduced.
Example 2：
The description is given by taking as an example the case where a plurality of epitaxial layers to be tested are grown on a substrate, and a spacer layer is grown between each two epitaxial layers to be tested, as shown in fig. 3 and 5.
The growth process of the epitaxial layer and the spacing layer to be detected by adopting the film quality detection method of the epitaxial layer is as follows:
1) A processing chamber and substrate are provided.
2) The substrate is subjected to a high temperature treatment using hydrogen and nitrogen:
hydrogen (H) is turned on 2 ) And nitrogen (N) 2 ) The gas source exposes the Si-based substrate to gas, raises the temperature of the Si-based substrate in the pre-cleaning cavity, and carries out high-temperature treatment on the Si-based substrate at the temperature of 750-1200 ℃ so as to remove an oxide layer on the surface of the Si-based substrate; the Si-based substrate is kept at a deposition temperature of 300-900 ℃, process parameters such as flow, pressure and the like required by deposition are stabilized, and the pressure is kept at 5-50 Torr.
3) Transferring the Si-based substrate from the precleaning chamber to a processing chamber, and introducing a process gas SiGe (Si) into the processing chamber 1-x Ge x ) Firstly depositing a spacer layer 1 on the surface of a Si-based substrate, wherein the spacer layer 1 is an undoped epitaxial layer; continuing to introduce the group IVA semiconductor precursor monosilane (SiH) into the process chamber 4 ) And disilane (Si) 2 H 6 ) Diborane (B) as a dopant 2 H 6 ) And phosphorus bromide (PBr) 3 ) Etching gaseous hydrochloric acid (HCl) and growing a first epitaxial layer 2 to be tested, i.e. a heteroepitaxial layer doped with precursors, outside the spacer layer 1.
4) Repeating the step 3) n times, growing at least two spacing layers and at least two measured epitaxial layers (in this example, two measured epitaxial layers) on the surface of the Si-based substrate, as shown in fig. 3, ensuring that one spacing layer is grown between the measured epitaxial layers with different doping concentrations, and making the doping concentration of the second measured epitaxial layer 3 smaller than the doping concentration of the first measured epitaxial layer 2.
5) And closing the introduced etching gas, the IVA semiconductor precursor and the dopant, and purging for 5-50 s.
6) And (4) finishing the whole process, and respectively detecting the dopant concentration and the growth rate of the prepared epitaxial layer film to be detected by using a measuring device, namely a secondary ion mass spectrum and a transmission electron microscope.
As shown in fig. 5, in example 2, a spacer layer 1 containing no dopant, a first epitaxial layer 2 to be tested deposited with a first dopant concentration, a spacer layer 1 containing no dopant, and a second epitaxial layer 3 to be tested deposited with a second dopant concentration are grown in this order from bottom to top on a Si-based substrate. The quality of the epitaxial layer to be tested is detected by using a transmission electron microscope, and it can be seen from fig. 5 that the interfaces are clear because the different epitaxial layers to be tested are separated by the spacing layer, and the growth rate of the epitaxial layer film can be calculated according to the thickness and the growth time of the epitaxial layer film to be tested. The quality of the film of the epitaxial layer to be detected is detected by using secondary ion mass spectrometry, and it can be seen from fig. 6 that the spacer layer can play a good isolation role, and the spacer layer and the epitaxial layer to be detected can be clearly distinguished, so that the dopant concentration of the epitaxial layer film to be detected is obtained.
The method has the advantages that the method can simultaneously detect the quality of the film on the epitaxial layers to be detected with different concentrations of the dopant, can realize the detection of a plurality of experimental conditions on different epitaxial layers to be detected respectively, and each layer of the epitaxial layers to be detected is separated by the spacing layer, so that the interfaces between the epitaxial layers to be detected are clear, the detection result is not influenced, and the accuracy is high.
In summary, depositing at least two epitaxial layers to be tested on the substrate can simultaneously implement quality detection of the dopant concentration and the growth rate of the multiple epitaxial layers to be tested. Furthermore, a spacer layer is deposited between different epitaxial layers to be tested, each epitaxial layer to be tested is spaced by the spacer layer and is far away from the substrate, the lower the dopant concentration of the epitaxial layer to be tested is, the spacer layer can be used as a partition to obviously distinguish different epitaxial layers to be tested when the secondary ion mass spectrometry and the transmission electron microscope are used for measurement, the test period is greatly shortened, and the cost is reduced.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (16)
1. A method for detecting the film quality of an epitaxial layer is characterized by comprising the following steps:
s1, providing a processing chamber and a substrate;
s2, performing an epitaxial process, and depositing at least two tested epitaxial layers on the substrate, wherein the tested epitaxial layers comprise dopants, and the concentrations of the dopants contained in the different tested epitaxial layers are different;
and S3, finishing the epitaxial process, and detecting the film quality of the detected epitaxial layer through a measuring device.
2. The method for inspecting the film quality of an epitaxial layer according to claim 1, wherein in step S2, a spacer layer is deposited on the substrate, and then at least two epitaxial layers to be inspected are deposited.
3. The method for inspecting film quality of epitaxial layer according to claim 1 wherein in step S2, a spacer layer is deposited before the epitaxial layer under test is deposited.
4. The method for inspecting film quality of an epitaxial layer according to claim 2 or 3, wherein the spacer layer and the epitaxial layer to be inspected are different in deposition material.
5. The method for inspecting film quality of epitaxial layer according to claim 2 or 3, wherein the deposition material and deposition process of the spacer layer are the same between different spacer layers.
6. The method for inspecting the film quality of an epitaxial layer according to claim 1, wherein in step S2, the farther from the substrate, the lower the dopant concentration of the epitaxial layer under test.
7. The method for detecting the film quality of the epitaxial layer according to claim 1, wherein in the step S2, depositing the epitaxial layer to be detected specifically comprises: introducing process gas into the processing chamber and depositing, wherein the process gas comprises deposition gas and a dopant; the deposition gas comprises at least one group IVA semiconductor precursor and the dopant comprises at least one group IIIA dopant precursor or a group VA dopant precursor.
8. The method of film quality inspection of epitaxial layers of claim 7 wherein the process gas further comprises an etching gas.
9. The method of claim 7, wherein the group IVA semiconductor precursor comprises monosilane (SiH) 4 ) Disilane (Si) 2 H 6 ) Trisilane (Si) 3 H 8 ) Butyl silane (Si) 4 H 10 ) Isoxysilane (Si) 5 H 12 ) Neopentasilane (Si) 5 H 12 ) Dichlorosilane (SiH) 2 Cl 2 ) Trichlorosilane (SiHCl) 3 ) Germyle (GeH) 4 ) Digermane (Ge) 2 H 6 ) Germanium trisilane (Ge) 3 H 8 ) Methylsilane (CH) 3 -SiH 3 ) Any one or a combination of any two or more of them.
10. The method of film quality inspection of an epitaxial layer of claim 7, wherein the group IIIA dopant precursor comprises Borane (BH) 3 ) Diborane (B) 2 H 6 ) Boron trichloride (BCl) 3 ) Boron bromide (BBr) 3 ) Any one or a combination of any two or more of aluminum (Al), gallium (Ga), and indium (In).
11. The method for inspecting film quality of an epitaxial layer according to claim 7, wherein the group VA dopant precursor contains any one of phosphide or arsenide or a combination of any two or more thereof.
12. The method for inspecting film quality of epitaxial layer according to claim 11, wherein the phosphide comprises Phosphane (PH) 3 ) Phosphorus chloride (PCl) 3 ) Phosphorus bromide (PBr) 3 ) The arsenide at least comprises arsine (AsH) 3 ) Arsenic trichloride (AsCl) 3 )。
13. The method for inspecting film quality of epitaxial layer according to claim 8, wherein the etching gas contains chlorine gas (Cl) 2 ) Hydrochloric acid (HCl), carbon tetrachloride (CCl) 4 ) Any one of them.
14. The method for detecting the film quality of the epitaxial layer according to claim 2 or 3, wherein in the step S2, the depositing the spacer layer specifically comprises: introducing a spacer layer process gas into the processing chamber and depositing, wherein the spacer layer process gas comprises silicon germanium carbide (Si) 1-x-y Ge x C y ) Silicon germanide (Si) 1-x Ge x ) Germanium tin (Ge) 1-x Sn x ) Germanium-silicon-tin (Ge) 1-x- y Si x Sn y ) Germanium silicon tin carbide (Ge) 1-x-y Si x Sn y C x ) Silicon tin (Si) 1-x Sn x ) Silicon tin carbide (Si) 1-x-y Sn x C y ) Silicon carbide (Si) 1-x C x ) Wherein x is more than 0 and less than 1, y is more than 0 and less than 1, and x + y is more than 0 and less than 1.
15. The method for inspecting film quality of epitaxial layer according to claim 1, wherein the measuring device is at least one of Secondary Ion Mass Spectrometry (SIMS) and Transmission Electron Microscope (TEM).
16. The method for inspecting film quality of epitaxial layer according to claim 1, further comprising, in step S2: and carrying out high-temperature treatment on the substrate to remove the oxide on the surface of the substrate, wherein the high-temperature treatment is carried out before the epitaxial process.
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