CN115933329A

CN115933329A - Method, device and medium for correcting electron beam proximity effect

Info

Publication number: CN115933329A
Application number: CN202211728871.6A
Authority: CN
Inventors: 徐松; 关健; 周兴; 赵晋
Original assignee: Meta Bounds Inc
Current assignee: Meta Bounds Inc
Priority date: 2022-12-30
Filing date: 2022-12-30
Publication date: 2023-04-07

Abstract

The application discloses a method, a device and a medium for correcting electron beam proximity effect, and relates to the field of electron beam lithography. In the previous mode of amplifying the pattern, the amplification of the pattern edge can be caused while amplifying the sharp corner, so that the pattern distortion is caused, but in the method of the application, because the exposure area is added at the position affected by the proximity effect, and the position not affected by the proximity effect is still superposed with the original pattern, the shape-preserving effect of the pattern is better; in the previous mode of adding the compensation pattern, the edge of the pattern may be raised, and in the method, the finally formed area is an area enclosed by all intersection points together or an area enclosed by the top point of a sharp corner unaffected by the proximity effect and all intersection points together, and further, the corrected target pattern does not have the condition of raised edge, so that the method provided by the application reduces the influence of the proximity effect and improves the shape-preserving effect of the exposed pattern.

Description

Correction method, device and medium for electron beam proximity effect

Technical Field

The present application relates to the field of electron beam lithography, and in particular, to a method, an apparatus, and a medium for correcting electron beam proximity effect.

Background

In the electron beam exposure process, the proximity effect blurs the exposed pattern, especially when making fine patterns, due to an effect of high-energy incident electrons scattering in the electron beam resist and backscattering on the substrate, thereby exposing non-target areas of the pattern, i.e. the effect of the proximity effect distorts the pattern.

At present, in order to reduce the influence of the proximity effect, the following two ways are generally adopted. One is to enlarge the pattern at the position where the proximity effect is significant, and the other is to add the compensation pattern at the position where the proximity effect is significant. Taking the target pattern as a diamond as an example, under the influence of the proximity effect, the sharp angle of the diamond becomes deformed and becomes a rounded angle. When the influence of the proximity effect is eliminated by adopting a pattern amplification mode, the sharp corners of the rhombus are elongated, and due to the fact that the deformation quantities of different sharp corners are different, namely different times of amplification are required to be carried out on different sharp corners according to the severity of the influence of the proximity effect, the sides of the amplified rhombus are not the same as the shape of the initial rhombus, and the pattern is still distorted; when the influence of the proximity effect is eliminated by adding the compensation pattern, the compensation pattern is added at the sharp corner of the diamond, the compensation patterns with different sizes need to be added to different sharp corners according to the influence degree of the proximity effect, and after the compensation pattern is added, the edge of the diamond may be raised. Therefore, the proximity effect cannot be effectively reduced by adopting the two methods, so that the conformal effect of the exposed pattern is improved.

Therefore, it is an urgent need to solve the above-mentioned problems by providing a method for effectively reducing the proximity effect and thus improving the conformal effect of the exposed pattern.

Disclosure of Invention

The present application provides a method, an apparatus and a medium for correcting electron beam proximity effect, which are used to reduce the proximity effect and thereby improve the conformal effect of the exposed pattern.

In order to solve the above technical problem, the present application provides a method for correcting an electron beam proximity effect, including:

acquiring a target area of a target graph; wherein the target area is a position in the target graph affected by a proximity effect;

acquiring arc-shaped structures added inside or outside each target area; at least two arc-shaped structures are added to the same target area;

obtaining a first target intersection point between the arc-shaped structures after deformation in the same target area after being influenced by the proximity effect, and a second target intersection point between the arc-shaped structures after deformation and the target graph in the target area;

under the condition that all the target areas are all sharp angles of the target graph, acquiring a first area which is defined by the first target intersection point and the second target intersection point; correcting the target graph according to the first area;

under the condition that all the target areas are partial sharp corners of the target graph, acquiring a second area which is formed by the top point of the sharp corner, the first target intersection point and the second target intersection point which are not influenced by the proximity effect; and correcting the target graph according to the second area.

Preferably, the acquiring of the arc-shaped structures added inside or outside each of the target areas comprises:

acquiring the shape of the sharp corner of the target area;

acquiring the arc-shaped structures added outside the target area under the condition that the sharp corners of the target area are convex corners;

acquiring the arc-shaped structures added in the target area under the condition that the sharp corners of the target area are concave corners.

Preferably, the number and size of the arc-shaped structures and the positions of the arc-shaped structures inside or outside the target area are determined according to the influence of an electron beam proximity effect of an electron beam lithography machine; the arc-shaped structure is at least any one of a circle, an arch and a fan.

Preferably, the number of the arc structures is two, and the arc structures are a first arc and a second arc; the obtaining a first target intersection point between the arc structures deformed at the same target region after being influenced by the proximity effect includes:

under the condition that the deformed first arc is tangent to the deformed second arc after being influenced by the proximity effect, acquiring a tangent point of the deformed first arc and the deformed second arc as the first target intersection point;

under the condition that the deformed first arc and the deformed second arc are intersected after being influenced by the proximity effect, acquiring one intersection point of two intersection points of the deformed first arc and the deformed second arc as the first target intersection point; wherein the first target intersection point is determined according to the position of the target region in the target graph and the shape of the sharp corner of the target region.

Preferably, the determining of the first target intersection point according to the position of the target region in the target graph and the shape of the sharp corner of the target region includes:

under the condition that the target area is positioned above the target graph and the sharp angle of the target area is a convex angle, the first target intersection point is a lower intersection point of two intersection points of the deformed first arc and the deformed second arc;

under the condition that the target area is positioned below the target graph and the sharp angle of the target area is a convex angle, the first target intersection point is an upper intersection point of two intersection points of the deformed first arc and the deformed second arc;

under the condition that the target area is positioned on the left side of the target graph and the sharp angle of the target area is a convex angle, the first target intersection point is a right intersection point of two intersection points of the deformed first arc and the deformed second arc;

and under the condition that the target area is positioned on the right side of the target graph and the sharp angle of the target area is a convex angle, the first target intersection point is a left intersection point of two intersection points of the deformed first arc and the deformed second arc.

under the condition that the target area is positioned above the target graph and the sharp angle of the target area is a concave angle, the first target intersection point is an upper intersection point of two intersection points of the deformed first arc and the deformed second arc;

under the condition that the target area is positioned below the target graph and the sharp corner of the target area is a concave corner, the first target intersection point is a lower intersection point of two intersection points of the deformed first arc and the deformed second arc;

under the condition that the target area is positioned on the left side of the target graph and the sharp angle of the target area is a concave angle, the first target intersection point is a left intersection point of two intersection points of the deformed first arc and the deformed second arc;

and under the condition that the target area is positioned on the right of the target graph and the closed angle of the target area is a reentrant angle, the first target intersection point is a right intersection point of two intersection points of the deformed first arc and the deformed second arc.

Preferably, the arc-shaped structure is circular in the case of the e-beam lithography machine model JBX-9500 FS.

In order to solve the above technical problem, the present application further provides an apparatus for correcting an electron beam proximity effect, including:

the first acquisition module is used for acquiring a target area of a target graph; wherein the target area is a position in the target graph influenced by a proximity effect;

the second acquisition module is used for acquiring arc structures additionally arranged inside or outside each target area; at least two arc-shaped structures are added at the same target area;

a third obtaining module, configured to obtain a first target intersection point between the arc-shaped structures that are deformed in the same target area after being affected by the proximity effect, and a second target intersection point between the deformed arc-shaped structures and the target graph in the target area;

a fourth obtaining module, configured to obtain, when all the target regions are all sharp corners of the target graph, a first region surrounded by the first target intersection point and the second target intersection point; correcting the target graph according to the first area;

a fifth obtaining module, configured to, when all the target regions are partial sharp corners of the target graph, obtain a second region that is surrounded by a vertex of the sharp corner, the first target intersection point, and the second target intersection point, where the vertex of the sharp corner, the first target intersection point, and the second target intersection point are not affected by the proximity effect; and correcting the target graph according to the second area.

a memory for storing a computer program;

and a processor for implementing the steps of the method for correcting the electron beam proximity effect when the computer program is executed.

In order to solve the above technical problem, the present application further provides a computer-readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the steps of the method for correcting the electron beam proximity effect described above.

The method for correcting the electron beam proximity effect provided by the application comprises the following steps: acquiring a target area of a target graph; wherein, the target area is the position influenced by the proximity effect in the target graph; acquiring arc structures added inside or outside each target area; at least two arc-shaped structures are added in the same target area; acquiring a first target intersection point between the deformed arc-shaped structures in the same target area after being influenced by the proximity effect, and a second target intersection point between the deformed arc-shaped structures in the target area and the target graph; under the condition that all target areas are all sharp angles of the target graph, acquiring a first area formed by all first target intersection points and all second target intersection points; correcting the target graph according to the first area; under the condition that all target areas are partial sharp corners of the target graph, a second area which is formed by the top point of the sharp corner, the first target intersection point and the second target intersection point and is not influenced by the proximity effect is obtained; and correcting the target graph according to the second area. In the previous mode of amplifying the graph, the sharp corner is amplified, and simultaneously the graph edge is amplified, so that the graph distortion is caused, but in the method of the application, because the exposure area is only added at the position affected by the proximity effect, the position not affected by the proximity effect is not changed, namely the position not affected by the proximity effect is still superposed with the original graph, so the shape preserving effect of the graph is better; in the former mode of adding the compensation pattern, the edge of the pattern may be raised, and in the method of the present application, the finally formed region is a region surrounded by all intersection points together or a region surrounded by the top point of a sharp corner which is not affected by the proximity effect and all intersection points together, and furthermore, the situation of raised edge does not exist in the corrected target pattern, so that the method provided by the present application reduces the influence of the proximity effect and simultaneously improves the shape-preserving effect of the exposed pattern.

In addition, the present application also provides a device and a computer readable storage medium for correcting the electron beam proximity effect, which have the same or corresponding technical features as the above-mentioned method for correcting the electron beam proximity effect, and the effects are the same.

Drawings

In order to more clearly illustrate the embodiments of the present application, the drawings needed for the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained by those skilled in the art without inventive effort.

FIG. 1a is a schematic diagram of a target pattern in the absence of proximity effects;

FIG. 1b is a schematic diagram of a target pattern affected by proximity effect;

FIG. 1c is a schematic diagram of a target pattern after the pattern is enlarged;

FIG. 1d is a schematic diagram of a target pattern after adding a compensation pattern;

FIG. 2 is a flowchart illustrating a method for correcting electron beam proximity effect according to an embodiment of the present disclosure;

FIG. 3a is a schematic diagram of a circle 1 tangent to a circle 2 after being affected by a proximity effect according to an embodiment of the present application;

FIG. 3b is a schematic diagram of the intersection of circle 1 and circle 2 after being affected by the proximity effect according to the embodiment of the present application;

FIG. 3c is a schematic diagram of circle 1 being tangent to circle 2 after being affected by the proximity effect according to an embodiment of the present application;

FIG. 3d is a schematic diagram illustrating the tangency of circle 1 and circle 2 after being affected by the proximity effect according to the embodiment of the present application;

FIG. 3e is a schematic diagram of circle 1 intersecting circle 2 and intersecting a diamond shape after being affected by the proximity effect according to the embodiment of the present application;

fig. 4a is a schematic diagram of compensating two circles for each angle of a diamond shape according to an embodiment of the present application;

FIG. 4b is a schematic diagram of a compensated diamond shape according to an embodiment of the present application;

FIG. 5a is a schematic view of a target pattern including reentrant and convex corners provided by an embodiment of the present application;

FIG. 5b is a schematic diagram illustrating a concave corner compensated pattern deformation according to an embodiment of the present disclosure;

FIG. 5c is a schematic diagram of two circles being compensated for each of all reentrant angles provided by an embodiment of the present application;

FIG. 5d is a schematic diagram illustrating the target pattern with reentrant angles compensated according to the present embodiment;

FIG. 6 is a block diagram of an apparatus for correcting electron beam proximity effect according to an embodiment of the present disclosure;

fig. 7 is a structural diagram of an apparatus for correcting electron beam proximity effect according to another embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without any creative effort belong to the protection scope of the present application.

The core of the present application is to provide a method, an apparatus and a medium for correcting electron beam proximity effect, which are used to reduce the proximity effect and thereby improve the conformal effect of the exposed pattern.

In the electron beam exposure process, the proximity effect blurs the exposed pattern, especially when making fine patterns, due to an effect of high-energy incident electrons scattering in the electron beam resist and backscattering on the substrate, thereby exposing non-target areas of the pattern. In the case of using positive photoresist, taking the target pattern as a diamond as an example, the diamond is a non-exposure region, and is a non-exposure region before the rectangle and the diamond, fig. 1a is a schematic diagram of the target pattern when no proximity effect exists, and fig. 1b is a schematic diagram of the target pattern influenced by the proximity effect, it can be found by comparing fig. 1a and fig. 1b that the sharp corner of the diamond becomes a rounded corner after being influenced by the proximity effect, wherein the upper and lower sharp corners have a smaller dimension and a larger deformation amount, i.e., the radius of curvature of the chamfered corner is larger.

To correct for the proximity effect, the following two methods are generally employed. One is to enlarge the pattern and the other is to add a compensation pattern in the region where the proximity effect is severe. FIG. 1c is a schematic diagram of a target pattern after the pattern is enlarged. As can be seen from fig. 1c, at a position where the proximity effect is significant, for example, the upper and lower corners are elongated more, and the left and right corners are elongated less, so that the dimension of the target region is increased in the layout, thereby reducing the influence of the proximity effect. There are two risks in using a directly magnified pattern to reduce proximity effects: proximity effects vary in severity at different locations and therefore one must choose to increase the magnification at severe locations and decrease the magnification at locations where proximity effects are slight. Taking the diamond shape in fig. 1c as an example, the upper and lower sharp corner positions stretch more, and the left and right sharp corner positions stretch less. The sides of the diamond do not coincide with the sides of the target pattern, resulting in distortion. Secondly, if the sides of the rhombus are ensured to be coincident with the sides of the target rhombus, namely the graph is scaled in an equal proportion, the effect of eliminating the proximity effect of reducing the upper and lower corners and the left and right corners cannot be ensured at the same time. FIG. 1d is a schematic diagram of a target pattern after adding a compensation pattern. The compensation pattern is added in the proximity effect severe region, i.e. the four small diamond shaped regions in fig. 1 d. It is also an artificial increase in the size of the region where the proximity effect is severe, thereby reducing the influence of the proximity effect. The problem of adding the compensation pattern is that the accuracy control is insufficient. The smaller the size, the more severe the proximity effect of the region, and the fine adjustment of the shape of the compensation pattern is required. But the effect of the compensation pattern on the proximity effect during actual exposure cannot be accurately calculated in a small size range. Taking fig. 1d as an example, the compensation patterns at the upper and lower sharp corners may cause the sides of the diamond to bulge. Therefore, the curvature radius of the exposed pattern sharp corner is remarkably reduced by adjusting the shape of the exposure area of the layout, increasing the arc-shaped structure and utilizing the proximity effect.

In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. Fig. 2 is a flowchart of a method for correcting an electron beam proximity effect according to an embodiment of the present disclosure, as shown in fig. 2, the method includes:

s10: acquiring a target area of a target graph; wherein the target area is a position in the target graph which is influenced by the proximity effect.

S11: acquiring arc structures added inside or outside each target area; wherein, the number of the added arc structures at the same target area is at least two.

S12: and after the influence of the proximity effect is obtained, a first target intersection point between the deformed arc-shaped structures in the same target area and a second target intersection point between the deformed arc-shaped structures in the target area and the target graph are obtained.

S13: judging whether all the target areas are all sharp corners of the target graph or not; if yes, go to step S14; if not, the step S15 is carried out;

s14: acquiring a first area enclosed by the first target intersection point and the second target intersection point; correcting the target graph according to the first area;

s15: acquiring a second area which is formed by the top point of the sharp corner which is not influenced by the proximity effect, the first target intersection point and the second target intersection point; and correcting the target graph according to the second area.

When using positive glue, electron beam non-exposure is performed at the target area and electron beam exposure is performed at the non-target area, as the diamond areas in the above-mentioned fig. 1a, 1b, 1c and 1d are the non-exposure areas; an exposure area is arranged between the rectangle and the rhombus; when negative photoresist is used, electron beam exposure is performed at the target area, electron beam non-exposure is performed at the non-target area, and the exposed area and the non-exposed area when negative photoresist is used are the reverse of the exposed area and the non-exposed area in fig. 1a, 1b, 1c and 1 d. The shape of the target pattern is not limited and is determined according to actual conditions. Since the electron beams interfere with each other during the exposure process, the region of the target pattern affected by the proximity effect is referred to as the target region in this embodiment. The specific target area is determined according to actual conditions. The region most susceptible to proximity effects is typically the sharp corner of the target region, resulting in a deformation of the sharp corner and a larger radius of curvature of the chamfer. If the target pattern is a diamond shape, the target area of the target pattern is four sharp corners of the diamond shape.

In practice, obtaining the arc-shaped structures added inside or outside each target area includes: acquiring the shape of a sharp corner of a target area; under the condition that the sharp corner of the target area is a convex corner, acquiring an arc-shaped structure added outside the target area; in the case where the sharp corners of the target region are reentrant corners, arc-shaped structures added inside the target region are obtained. The number and the size of the arc structures and the positions of the arc structures inside or outside the target area are determined according to the influence of the electron beam proximity effect of the electron beam lithography machine; the arc-shaped structure is at least one of a circle, an arch and a fan. Since the proximity effect between the arc structures is utilized, the number of the arc structures is at least two. Taking the target pattern as a diamond as an example, the diamond is a sharp-angled structure, so in order to reduce the influence of the proximity effect, at least two arc structures are added outside the diamond. It should be noted that the effect of the e-beam proximity effect of the e-beam lithography machine is empirically derived, such as in the case of the model JBX-9500FS, the preferred arcuate configuration is circular.

And acquiring a first target intersection point between the deformed arc structures in the same target area after being influenced by the proximity effect, and a second target intersection point between the deformed arc structures in the target area and the target graph. It should be noted that, after being affected by the proximity effect, a plurality of intersection points may exist between the deformed arc structures in the same target region, and in order to select a suitable first target intersection point, the first target intersection point may be determined according to the position of the target region in the target graph and the shape of the sharp corner of the target region; a plurality of intersection points may exist between the target region and the target graph of each arc-shaped structure after deformation in the same target region, and a preferred embodiment is to select a point closest to a corresponding first target intersection point from all the intersection points as a second target intersection point.

And if all sharp corners of the target graph are influenced by the proximity effect, taking the area enclosed by all the first target intersection points and all the second target intersection points as the corrected target graph. Starting from one target intersection point (referring to a first target intersection point or a second intersection point), connecting the target intersection points along the clockwise direction or the counterclockwise direction to obtain a region surrounded by all the target intersection points; and if part of sharp corners of the target graph are influenced by the proximity effect, a second area which is defined by the vertex of the sharp corner which is not influenced by the proximity effect, the first target intersection point and the second target intersection point together is used as the corrected target graph. The area enclosed by all points can be obtained by connecting the points clockwise or counterclockwise starting from one point (referring to the vertex of a sharp angle unaffected by the proximity effect, the first object intersection point or the second object intersection point).

The method for correcting the electron beam proximity effect provided by the embodiment comprises the following steps: acquiring a target area of a target graph; wherein, the target area is the position influenced by the proximity effect in the target graph; acquiring arc structures added inside or outside each target area; at least two arc-shaped structures are added in the same target area; acquiring a first target intersection point between the deformed arc-shaped structures in the same target area after being influenced by the proximity effect, and a second target intersection point between the deformed arc-shaped structures in the target area and the target graph; under the condition that all target areas are all sharp angles of the target graph, acquiring a first area formed by all first target intersection points and all second target intersection points; correcting the target graph according to the first area; under the condition that all target areas are partial sharp corners of the target graph, a second area which is formed by the top point of the sharp corner, the first target intersection point and the second target intersection point and is not influenced by the proximity effect is obtained; and correcting the target graph according to the second area. In the previous mode of amplifying the graph, the amplification of the graph edge is caused while amplifying the sharp corner, so that the graph distortion is caused, and in the method, because the exposure area is only added at the position influenced by the proximity effect, the position not influenced by the proximity effect is not changed, namely the position not influenced by the proximity effect is still superposed with the original graph, the shape-preserving effect of the graph is better; in the previous mode of adding the compensation pattern, the edge of the pattern may be raised, and in the method of this embodiment, the finally formed region is a region surrounded by all intersection points together or a region surrounded by the vertex of the sharp corner which is not affected by the proximity effect and all intersection points together, and further, the corrected target pattern does not have the condition of raised edge, so that the method provided by this embodiment improves the shape-preserving effect of the exposed pattern while reducing the influence of the proximity effect.

On the basis of the above embodiment, in order to shape the pattern more conveniently and quickly, the preferred embodiment is that the number of the arc structures is two, and the arc structures are a first arc and a second arc; acquiring a first target intersection point between the arc structures deformed in the same target area after being influenced by the proximity effect comprises the following steps:

under the condition that the deformed first arc is tangent to the deformed second arc after being influenced by the proximity effect, acquiring a tangent point of the deformed first arc and the deformed second arc as a first target intersection point;

under the condition that the deformed first arc and the deformed second arc are intersected after being influenced by the proximity effect, one of two intersection points of the deformed first arc and the deformed second arc is obtained to serve as a first target intersection point; and the first target intersection point is determined according to the position of the target area in the target graph and the shape of the sharp corner of the target area.

Similarly, the target pattern is a rhombus, and the number of the added arc structures is two, namely circle 1 and circle 2. Fig. 3a is a schematic diagram of tangency between circle 1 and circle 2 after being affected by proximity effect according to the embodiment of the present application. Fig. 3b is a schematic diagram of intersection of circle 1 and circle 2 after being affected by the proximity effect according to the embodiment of the present application. As shown in fig. 3a and 3b, the dotted line represents the positions of circle 1 and circle 2 before deformation, and the solid line represents the positions of circle 1 and circle 2 after response by the proximity effect. The positions and sizes of the circle 1 and the circle 2 are determined according to the influence of the electron beam proximity effect of the electron beam lithography machine. As shown in fig. 3a, the tangent point a of circle 1 and circle 2 is the first target intersection point; in figure 3b, there are two intersections in circle 1 and circle 2, one of which is selected as the first target intersection, and when one of the two intersections is selected as the first target intersection, the preferred embodiment is determined by the position of the cusp in the diamond, the shape of the cusp.

It should be noted that two circles with the same size and the center positions of which may not be on the same straight line are selected in fig. 3a and 3 b. In practice, the sizes of the circles may be different, and the positions of the centers of the circles may not be on the same horizontal line or vertical line. Taking the tangent of two circles as an example, fig. 3c provides another schematic diagram of the tangent of circle 1 and circle 2 after being affected by the proximity effect for the embodiment of the present application, as shown in fig. 3c, the two circles have different radii; fig. 3d is a schematic diagram of the circle 1 and the circle 2 tangent after being affected by the proximity effect according to the embodiment of the present application, and as shown in fig. 3d, the centers of the circle 1 and the circle 2 are not on the same horizontal line or vertical line.

In addition, the second target intersection point may be a point where circle 1 and circle 2 are tangent to the diamond, or a point where circle 1 and circle 2 intersect the diamond. The intersections b and c of circles 1 and 2 with the rhombus in fig. 3a, 3b, 3c, 3d are second target intersections, respectively. Fig. 3e is a schematic diagram of circles 1 and 2 intersecting with each other and intersecting with a rhombus after being affected by the proximity effect according to the embodiment of the present application, where the second target intersection points are point b and point c.

Taking the first target intersection point and the second target intersection point determined in fig. 3a as an example, the process of conforming to the entire diamond shape is explained. For each corner of the rhombus, a corresponding first target intersection point and a corresponding second target intersection point are determined, and fig. 4a is a schematic diagram of compensating two circles for each corner of the rhombus according to the embodiment of the present application. As shown in fig. 4a, 4 sets of points are obtained, respectively: a1B1, c1; a2B2, c2; a3B3, c3; a4B4, c4; an adjusted graph is obtained by connecting the arc a1b1, the line segment b1c3, the arc c3a3, the arc a3b3, the line segment b3c2, the arc c2a2, the arc a2b2, the line segment b2c4, the arc c4a4, the arc a4b4, the line segment b4c1 and the arc c1a1, as shown in fig. 4b, and fig. 4b is a schematic diagram of a compensated rhombus provided in the embodiment of the present application. For positive glue, the inside of the graph formed by all line segments and arcs in FIG. 4b is a non-exposed area. In practice, the external exposure area can be increased according to the actual conditions such as the period of the pattern, and in the process of forming the grating by adopting a plurality of diamond structures, the above mode can be adopted for each diamond to compensate.

The arc structure that this embodiment was chosen is two, compares in the mode that adopts two unnecessary arc structures, can find the nodical and select suitable nodical between the arc structure fast to can reduce proximity effect's influence more fast.

When the arc-shaped structures intersect after being influenced by the proximity effect, in order to select a suitable first target intersection point, a preferred embodiment is that the first target intersection point is determined according to the position of the target area in the target graph and the shape of the sharp corner of the target area, and comprises:

under the condition that the target area is positioned on the left side of the target graph and the sharp corner of the target area is a convex corner, the first target intersection point is a right intersection point of two intersection points of the deformed first arc and the deformed second arc;

Taking fig. 3b as an example, when the target region is located above the target pattern and the sharp corner of the target region is a convex corner, the first target intersection point is a lower intersection point of two intersection points of the deformed first arc and the deformed second arc. The sharp corner shown in FIG. 3b is located above the diamond and is a convex corner, and the first target intersection point is the lower intersection point, point a.

The manner of determining the intersection point of the first target according to the position of the target region in the target graph and the shape of the sharp corner of the target region provided by the embodiment enables the deformed graph to be properly compensated.

In the above embodiment, the way of determining the first target intersection point when the sharp corner is a convex corner is described, and in the present embodiment, the way of determining the first target intersection point when the sharp corner is a concave corner is described, and preferably, the determining of the first target intersection point according to the position of the target area in the target graph and the shape of the sharp corner of the target area includes:

under the condition that the target area is positioned above the target graph and the sharp corner of the target area is a concave corner, the first target intersection point is an upper intersection point of two intersection points of the deformed first arc and the deformed second arc;

under the condition that the target area is positioned on the left side of the target graph and the sharp corner of the target area is a concave corner, the first target intersection point is a left intersection point of two intersection points of the deformed first arc and the deformed second arc;

and under the condition that the target area is positioned on the right side of the target graph and the sharp corner of the target area is a reentrant corner, the first target intersection point is the right intersection point of two intersection points of the deformed first arc and the deformed second arc.

Fig. 5a is a schematic diagram of a target pattern including concave angles and convex angles according to an embodiment of the present disclosure. First, the positions and sizes of the circle 1 and the circle 2 are determined according to the positions and sizes of the reentrant corners, and fig. 5b is a schematic diagram of the reentrant corners after the deformation of the compensation pattern provided by the embodiment of the present application. Due to the proximity effect, the position where the circles 1 and 2 are close to each other is deformed after exposure, and the actual exposure area becomes an area surrounded by the arc 1 and the arc 2 (solid line). The region may be tangent or intersected as the case may be, and the first target intersection point is a as shown in fig. 5 b. The arc 1 and the arc 2 are tangent or intersected with the target graph, and the second target intersection points are b and c respectively. Repeating the above steps for each reentrant angle, two sets of points are obtained: a1, b1, c1; a2, b2, and c2, fig. 5c is a schematic diagram of compensating two circles for all reentrant angles respectively according to the embodiment of the present application, and fig. 5d is a schematic diagram of compensating a target pattern including reentrant angles according to the embodiment. p1 to p6 are vertices of the target graph. The line segments p1p2, p2b1, the arc b1a1, the arc a1c1, the line segment c1p3, the line segment p3p4, the line segment p4p5, the line segment p5c2, the arc c2a2, the arc a2b2, the line segment b2p6 and the line segment p6p1 are connected to obtain the graph adjusted for the left and right reentrant angles. For positive glue, the outside of this area is the exposed area. Note that the adjustment of the reentrant angle does not affect the adjustment of the convex angle, i.e., the adjustment of the reentrant angle and the convex angle can be performed in the same pattern.

Through the shape of the exposure area of the adjusting domain, structures such as circles, arches and sectors are added, and the curvature radius of the exposed sharp corner of the graph is remarkably reduced by utilizing the proximity effect. The shape of a sharp corner position affected by the proximity effect after exposure is improved, and the shape-preserving capability of the exposed graph is improved; secondly, aiming at proximity effects of different degrees, only the increased structure size and position need to be adjusted, and complex modification on the layout is not needed. In practice, the increased structure size and position can be optimized, the influence on the area with unobvious proximity effect can be avoided, and the effects of local processing and overall shape preservation are realized.

In the above embodiments, the method for correcting the electron beam proximity effect is described in detail, and the present application also provides a corresponding embodiment of the correction device for the electron beam proximity effect. It should be noted that the present application describes the embodiments of the apparatus portion from two perspectives, one from the perspective of the function module and the other from the perspective of the hardware.

Fig. 6 is a structural diagram of an apparatus for correcting electron beam proximity effect according to an embodiment of the present application. The present embodiment is based on the angle of the function module, and includes:

a first obtaining module 10, configured to obtain a target area of a target graph; wherein the target area is a position in the target graph affected by the proximity effect;

a second obtaining module 11, configured to obtain an arc-shaped structure added inside or outside each target area; at least two arc-shaped structures are added in the same target area;

a third obtaining module 12, configured to obtain a first target intersection point between the deformed arc-shaped structures in the same target area after being affected by the proximity effect, and a second target intersection point between the deformed arc-shaped structures in the target area and the target graph;

the judging module 13 is configured to judge whether all target regions are all sharp corners of the target graph, if yes, trigger the fourth obtaining module 14, and if no, trigger the fifth obtaining module 15;

a fourth obtaining module 14, configured to obtain a first region enclosed by the first target intersection point and the second target intersection point; correcting the target graph according to the first area;

a fifth obtaining module 15, configured to obtain a second region surrounded by a vertex of the sharp corner unaffected by the proximity effect, the first target intersection point, and the second target intersection point; and correcting the target graph according to the second area.

Since the embodiments of the apparatus portion and the method portion correspond to each other, please refer to the description of the embodiments of the method portion for the embodiments of the apparatus portion, which is not repeated here. And has the same advantageous effects as the above-mentioned correction method of the electron beam proximity effect.

Fig. 7 is a structural diagram of an apparatus for correcting electron beam proximity effect according to another embodiment of the present application. In this embodiment, based on hardware, as shown in fig. 7, the correction device for the electron beam proximity effect includes:

a memory 20 for storing a computer program;

a processor 21, configured to execute a computer program to implement the steps of the method for correcting the proximity effect of the electron beam as mentioned in the above embodiments.

The processor 21 may include one or more processing cores, such as a 4-core processor, an 8-core processor, and the like. The Processor 21 may be implemented in at least one hardware form of a Digital Signal Processor (DSP), a Field-Programmable Gate Array (FPGA), and a Programmable Logic Array (PLA). The processor 21 may also include a main processor and a coprocessor, where the main processor is a processor for Processing data in a wake state, and is also called a Central Processing Unit (CPU); a coprocessor is a low power processor for processing data in a standby state. In some embodiments, the processor 21 may be integrated with a Graphics Processing Unit (GPU) which is responsible for rendering and drawing the content required to be displayed by the display screen. In some embodiments, the processor 21 may further include an Artificial Intelligence (AI) processor for processing computational operations related to machine learning.

The memory 20 may include one or more computer-readable storage media, which may be non-transitory. Memory 20 may also include high speed random access memory, as well as non-volatile memory, such as one or more magnetic disk storage devices, flash memory storage devices. In this embodiment, the memory 20 is at least used for storing a computer program 201, wherein the computer program is loaded and executed by the processor 21, and is capable of implementing the relevant steps of the method for correcting the proximity effect of the electron beam disclosed in any of the foregoing embodiments. In addition, the resources stored in the memory 20 may also include an operating system 202, data 203, and the like, and the storage manner may be a transient storage manner or a permanent storage manner. Operating system 202 may include, among others, windows, unix, linux, and the like. The data 203 may include, but is not limited to, data related to the above-mentioned electron beam proximity correction method, and the like.

In some embodiments, the device for correcting the proximity effect of the electron beam may further include a display 22, an input/output interface 23, a communication interface 24, a power supply 25, and a communication bus 26.

Those skilled in the art will appreciate that the configuration shown in fig. 7 does not constitute a limitation on the means of correction of the electron beam proximity effect and may include more or fewer components than those shown.

The correction device for the electron beam proximity effect provided by the embodiment of the application comprises a memory and a processor, wherein when the processor executes a program stored in the memory, the following method can be realized: the effect of the correction method of the electron beam proximity effect is the same as the above.

Finally, the application also provides a corresponding embodiment of the computer readable storage medium. The computer-readable storage medium has stored thereon a computer program which, when being executed by a processor, carries out the steps as set forth in the above-mentioned method embodiments.

It is to be understood that if the method in the above embodiments is implemented in the form of software functional units and sold or used as a stand-alone product, it can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application, which are essential or part of the prior art, or all or part of the technical solutions may be embodied in the form of a software product, which is stored in a storage medium and executes all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.

The computer readable storage medium provided by the present application includes the above-mentioned correction method for electron beam proximity effect, and the effects are the same as above.

The present application provides a method, an apparatus and a medium for correcting electron beam proximity effect. The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.

It is further noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.

Claims

1. A method for correcting electron beam proximity effect, comprising:

acquiring a target area of a target graph; wherein the target area is a position in the target graph influenced by a proximity effect;

acquiring arc-shaped structures added inside or outside each target area; at least two arc-shaped structures are added at the same target area;

under the condition that all the target areas are partial sharp corners of the target graph, acquiring a second area which is defined by the top point of the sharp corner, the first target intersection point and the second target intersection point which are not influenced by the proximity effect; and correcting the target graph according to the second area.

2. The method of claim 1, wherein the obtaining of the arc-shaped structures added inside or outside each of the target areas comprises:

acquiring the shape of the sharp corner of the target area;

3. The method for correcting the proximity effect of the electron beam according to claim 1, wherein the number, the size, and the position of the arc-shaped structures inside or outside the target area are determined according to the influence of the proximity effect of the electron beam lithography machine; the arc-shaped structure is at least any one of a circle, an arch and a fan.

4. The method for correcting the proximity effect of the electron beam according to claim 1, wherein the two arc structures are a first arc and a second arc; the obtaining a first target intersection point between the arc structures deformed at the same target region after being influenced by the proximity effect includes:

under the condition that the deformed first arc and the deformed second arc are intersected after being influenced by the proximity effect, acquiring one intersection point of two intersection points of the deformed first arc and the deformed second arc as the first target intersection point; wherein the first target intersection point is determined according to the position of the target area in the target graph and the shape of the sharp corner of the target area.

5. The method for correcting the proximity effect of the electron beam according to claim 4, wherein the determining of the first target intersection point according to the position of the target area in the target pattern and the shape of the sharp corner of the target area comprises:

6. The method for correcting the proximity effect of the electron beam according to claim 4 or 5, wherein the determining of the first target intersection point according to the position of the target area in the target pattern and the shape of the sharp corner of the target area comprises:

and under the condition that the target area is positioned on the right side of the target graph and the closed angle of the target area is a concave angle, the first target intersection point is the right intersection point of the two intersection points of the deformed first arc and the deformed second arc.

7. The method of claim 3, wherein the arc structure is circular in the case of model JBX-9500FS of the E-beam lithography machine.

8. An apparatus for correcting electron beam proximity effect, comprising:

the first acquisition module is used for acquiring a target area of a target graph; wherein the target area is a position in the target graph affected by a proximity effect;

a fourth obtaining module, configured to obtain, when all the target areas are all the cusps of the target graph, a first area that is defined by the first target intersection point and the second target intersection point together; correcting the target graph according to the first area;

9. An apparatus for correcting electron beam proximity effect, comprising:

a memory for storing a computer program;

a processor for implementing the steps of the method for correcting electron beam proximity effect according to any one of claims 1 to 7 when executing the computer program.

10. A computer-readable storage medium, having stored thereon a computer program which, when being executed by a processor, carries out the steps of the method for correcting proximity effects of electron beams according to any one of claims 1 to 7.