CN115928206A - Substrate preparation method of rare earth doped magneto-optical film and GSGG-doped crystal - Google Patents
Substrate preparation method of rare earth doped magneto-optical film and GSGG-doped crystal Download PDFInfo
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- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 34
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 7
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- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
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Abstract
The invention discloses a substrate preparation method of a rare earth doped magneto-optical film and a GSGG doped crystal. The method comprises the following steps: s1, obtaining cell parameters of the cell; s2, adopting a doped GSGG crystal which has a unique doping variable and the unit cell parameter changes along with the doping variable rule as a substrate; s3, repeatedly adjusting the doping variables until the unit cell parameters of the trial-produced doped GSGG crystal are matched with the unit cell parameters of the rare earth-doped magneto-optical film to be prepared; and S4, manufacturing the substrate according to the doping variable of the substrate of the rare earth doped magneto-optical film. The substrate manufactured by the invention can effectively match the crystal cell parameters of the rare earth doped magneto-optical film, and reduce the problems of cracking of the rare earth doped magneto-optical film and the like caused by the mismatch of the crystal cells, and the crystal doping variable adopted by the substrate has a clear adjusting method, the development period is short, and the time is shortThe intermediate cost and the economic cost are greatly reduced. The GSGG-doped crystal is a Y-doped GSGG crystal with a chemical formula of Y x Gd 3‑ x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3.
Description
Technical Field
The invention belongs to the field of photoelectron technical materials and optical functional communication devices, and particularly relates to a substrate preparation method of a rare earth doped magneto-optical film and a GSGG-doped crystal.
Background
In the optical fiber communication technology, in order to ensure the normal transmission of an optical path and avoid the influence of reflected light, an optical isolator is generally used, a core part component of the optical isolator is a rare earth doped functional magneto-optical film, the quality and the use effect of the isolator are directly determined by the performance of the film, and a high-quality growth substrate is required for preparing the rare earth doped magneto-optical film.
The substrate for growing rare earth doped magneto-optical film, that is Bi: RIG series magneto-optical film, is mainly gadolinium gallium garnet or doped gadolinium gallium garnet at present. Gadolinium Gallium Garnet (GGG) crystal has a small lattice constant, and is not matched with the lattice constant of a large-lattice doped magneto-optical film, so that the film is cracked and low in growth efficiency. In order to increase the lattice constant of GGG, ca/Mg/Zr doping is usually used, but such doping easily causes a stress concentration region in the crystal, which is obviously extremely disadvantageous to the quality of the crystal, and in this region of stress concentration, the solute distribution is relatively uneven, so that the unit cell parameter is different from other regions, and cracks are easily generated during cutting processing, which is one of the disadvantages of using it as a substrate material.
In general, one of the keys to high quality production of magneto-optical films is the matching of the substrate material and the unit cell size of the magneto-optical film crystal. However, at present, only crystals with more suitable unit cell size can be continuously searched, the types and the contents of doped elements can be continuously adjusted, and the substrate and the magneto-optical film can be manufactured by trying, so that the time cost and the research and development investment are huge.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a substrate preparation method of a rare earth doped magneto-optical film and a doped GSGG crystal, and aims to effectively adjust the doping variable to match the cell parameter of the manufactured doped GSGG crystal with the cell parameter of the magneto-optical film to be manufactured by determining the regular correlation of the doping variable and the cell parameter, reduce the mismatch rate, develop the magneto-optical film matched with the cell parameter of the magneto-optical film to be manufactured, and greatly reduce the development time of the substrate crystal, thereby solving the technical problems that the quality of the magneto-optical film is poor due to the mismatch of the magneto-optical film and the substrate cell parameter in the prior art, or the development of a suitable substrate requires longer time and higher cost for groping the cell parameter.
To achieve the above object, according to one aspect of the present invention, there is provided a method of manufacturing a substrate for a rare earth-doped magneto-optical film, comprising the steps of:
s1, obtaining unit cell parameters of a rare earth doped magneto-optical film to be prepared;
s2, adopting a doped GSGG crystal which has a unique doping variable and the unit cell parameter changes along with the doping variable rule as a substrate;
s3, according to the cell parameters and the doping variable values of the pre-manufactured doped GSGG crystal with known cell parameters and doping variable values and the rule that the cell parameters change along with the doping variable, repeatedly adjusting the doping variable, designing raw material proportion according to the adjusted doping variable, pre-manufacturing the doped GSGG crystal, measuring the cell parameters of the doped GSGG crystal until the cell parameters of the pre-manufactured doped GSGG crystal are matched with the cell parameters of the rare earth-doped magneto-optical film to be prepared, and taking the value of the doping variable as the value of the doping variable of the substrate of the rare earth-doped magneto-optical film;
and S4, designing the raw material ratio according to the doping variable value of the substrate of the rare earth doped magneto-optical film to grow crystals and manufacturing the substrate.
Preferably, in the preparation method of the substrate of the rare earth doped magneto-optical film, the doped GSGG crystal is a Y-doped GSGG crystal.
Preferably, in the method for preparing the substrate of the rare earth doped magneto-optical film, the chemical formula of the doped GSGG crystal is Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3, the crystal belongs to garnet cubic system phase, and the change rule of unit cell parameters along with the doping variable x is as follows: monotonically decreasing; with unit cell parameters in
In between.
Preferably, in the method for preparing the substrate of the rare earth-doped magneto-optical film, the pre-manufactured doped GSGG crystal is prepared according to a preset doping variable and the unit cell parameters of the doped GSGG crystal are determined.
Preferably, in the method for preparing the substrate of the rare earth-doped magneto-optical film, a plurality of the trial-produced doped GSGG crystals with different doping variables exist, and preferably, the plurality of doping variables at least include a lower doping variable limit and an upper doping variable limit.
Preferably, in the method for preparing the substrate of the rare earth-doped magneto-optical film, when the change rule of the unit cell parameters along with the doping variable x is as follows: and when the unit cell parameters of the crystal cell change monotonously, determining the adjustment range of the doping variable according to the doping variable value of the pre-made GSGG-doped crystal, of which the unit cell parameters are closest to those of the prepared rare earth-doped magneto-optical film.
Preferably, in the preparation method of the substrate of the rare earth doped magneto-optical film, when the doped GSGG crystal is preferably a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Then, the repeatedly adjusting the doping variables specifically comprises:
when the unit cell parameter of the tested Y-doped GSGG crystal is over-small, reducing the doping variable x;
and when the unit cell parameter of the tested Y-doped GSGG crystal is determined to be overlarge, the doping variable x is increased.
Preferably, in the method for preparing the substrate of the rare earth-doped magneto-optical film, all the pre-manufactured doped GSGG crystals and the unit cell parameters thereof are used as the pre-manufactured doped GSGG crystals with known unit cell parameters and known values of the doping variables.
Preferably, in the method for preparing the substrate of the rare earth doped magneto-optical film, the process for preparing the substrate by crystal growth is the same as the process for preparing the doped GSGG crystal with the doping variable in a trial mode.
According to another aspect of the invention, a doped GSGG crystal is provided, which is a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3, the crystal belongs to garnet cubic system phase, and the change rule of unit cell parameters along with the doping variable x is as follows: monotonically decreasing, i.e. the cell parameter decreases with increasing x, the cell parameter being
In between.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
the substrate manufactured by the invention can effectively match the crystal cell parameters of the rare earth doped magneto-optical film, and reduce the problems of cracking of the rare earth doped magneto-optical film and the like caused by the mismatch of the crystal cells.
GSGG crystal doped with Y adopted by the preferred scheme is a novel magneto-optical crystal material and belongs to a cubic crystal system. The Mohs hardness of the crystal reaches 7.5, and the crystal has higher hardness and good machining performance; lattice constant of crystal
Higher than commercial GGG crystals>
And the quality is better, and defects such as cracking and the like are not easy to occur relative to other doped GGG crystals under the same lattice constant.
Drawings
FIG. 1 is an X-ray diffraction pattern of a Y: GSGG doped crystal powder provided by an embodiment of the invention;
FIG. 2 shows the measured unit cell parameters of the Y doped GSGG crystal provided by the embodiment of the invention at different doping amounts.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a method for preparing a substrate of a rare earth doped magneto-optical film, which comprises the following steps:
s1, obtaining unit cell parameters of a rare earth doped magneto-optical film to be prepared;
s2, adopting a doped GSGG crystal which has a unique doping variable and the unit cell parameter changes along with the doping variable rule as a substrate; the doped GSGG crystal is preferably a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3, the crystal belongs to garnet cubic crystal system phase, and the change rule of unit cell parameters along with doping variable x is as follows: monotonically decreasing, i.e. the cell parameter decreases with increasing x, the cell parameter is
In between. Research and investigation find that the yttrium (Y) -doped GSGG crystal also has the performance as a high-quality substrate material, and the lattice constant of the yttrium-doped GSGG crystal changes along with the change of the doping amount of yttrium element. By utilizing the characteristic, the unit cell parameter of the yttrium (Y) -doped GSGG crystal can be effectively searched and controlled, thereby being beneficial to the growth matching adjustment of the magneto-optical film, namely reducing the mismatch rate. Therefore, the Y-doped GSGG can be used as a growth substrate and applied to manufacturing a magneto-optical thin film growth substrate.
And S3, according to the cell parameters and the doping variable values of the pre-manufactured doped GSGG crystal with known cell parameters and doping variable values and the rule that the cell parameters change along with the doping variable, repeatedly adjusting the doping variable, designing raw material proportion according to the adjusted doping variable, pre-manufacturing the doped GSGG crystal, measuring the cell parameters of the doped GSGG crystal until the cell parameters of the pre-manufactured doped GSGG crystal are matched with the cell parameters of the rare earth-doped magneto-optical film to be prepared, and taking the value of the doping variable as the value of the doping variable of the substrate of the rare earth-doped magneto-optical film.
The trial-manufactured doped GSGG crystal is prepared according to preset doping variables and used for measuring unit cell parameters of the doped GSGG crystal, and a preferred scheme is that a plurality of trial-manufactured doped GSGG crystals with different doping variables exist, wherein the plurality of doping variables at least comprise lower doping variable limits and upper doping variable limits. More preferably, when the unit cell parameters change with the doping variable x, the unit cell parameters have the following rule: when the unit cell parameters of the crystal cell are monotonously changed, determining the adjustment range of the doping variable according to the doping variable value of the pre-made GSGG-doped crystal, the unit cell parameters of which are closest to the unit cell parameters of the prepared rare earth-doped magneto-optical film;
specifically, when the doped GSGG crystal is preferably a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Then, the repeatedly adjusting the doping variables specifically comprises:
when the unit cell parameter of the tested Y-doped GSGG crystal is over-small, reducing the doping variable x;
and when the unit cell parameter of the tested Y-doped GSGG crystal is determined to be overlarge, the doping variable x is increased.
More preferably, all the trial-produced doped GSGG crystals and the unit cell parameters thereof are used as the trial-produced doped GSGG crystals with known unit cell parameters and doping variable values. Because the data of the unit cell parameters of the trial-manufactured GSGG-doped crystal are gradually accumulated and abundant, when a substrate material is developed aiming at a new rare earth-doped magneto-optical film to be prepared, the development period can be obviously shortened, and under an ideal state, the data of the trial-manufactured GSGG-doped crystal is abundant enough, which is equivalent to obtaining the doping variable by looking up a table.
And S4, designing the raw material ratio according to the doping variable value of the substrate of the rare earth doped magneto-optical film to grow crystals and manufacturing the substrate. Preferably, the process for manufacturing the substrate by crystal growth is the same as the adopted crystal growth process for trial production of the doping variable of the GSGG crystal.
The GSGG-doped crystal is a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3, the crystal belongs to garnet cubic system phase, and the change rule of unit cell parameters along with the doping variable x is as follows: monotonically decreasing, i.e. the cell parameter increases with xPlus and minus, cell parameters are in
In the meantime. />
The following are examples:
the method for preparing the substrate of the rare earth doped magneto-optical film comprises the following steps:
s1, obtaining unit cell parameters of a rare earth doped magneto-optical film to be prepared;
the experiment shows that the unit cell parameter of the rare earth doped magneto-optical film to be prepared, namely the Bi-doped RIG magneto-optical film, is measured by the experiment
S2, adopting a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3 and is used as a substrate;
and S3, trial production of the Y-doped GSGG crystal, wherein the cell parameters and the doping variable values of the trial-produced GSGG-doped crystal with known cell parameters and doping variable values are obtained by the GSGG-doped GSGG crystal:
the present embodiment specifically manufactures the following doped Y of different values of x:
trial sample 1 according to Y x Gd 3-x Sc 2 Ga 3 O 12 (x＝0)
GSGG crystal planar interface growth preparation:
(1) Raw material synthesis: according to Y x Gd 3-x Sc 2 Ga 3 O 12 And (x = 0), accurately weighing the raw materials with purity according to the stoichiometric ratio, putting the raw materials into a mixer, uniformly shaking the raw materials for 24 hours, and calcining the raw materials for 8 to 16 hours at 1100 to 1500 ℃ in a muffle furnace in a high-temperature sintering mode after compression molding by using an isostatic press at 200 Mpa.
(2) The method is characterized in that an iraurita crucible is used as a container for crystal growth, raw materials are melted in the crucible for multiple times, a temperature field structure formed by a zirconium oxide cylinder, zirconium oxide filling sand and an aluminum oxide outer ring is adopted in a crystal furnace, the liquid level position is controlled to be 5-20 mm away from the top of the crucible, the crucible is vacuumized, and 50E is introduced80％CO 2 +20～50％％N 2 。
(3) In the heating process, in order to make the raw materials uniform, the melt temperature is slightly higher than the melting point of the raw materials, the crystal rotating speed is set to be 5-15 rpm, the pulling speed is slightly slow and is 0.5-1 mm/h, and the crystal is automatically seeded in a pulling furnace and is shouldered to grow.
(4) When the crystal growth is finished, the crystal is pulled out of the liquid level, and the crystal can be taken out after the crystal is slowly cooled to the room temperature at a step speed.
Growing Gd 3 Sc 2 Ga 3 O 12 The crystal has good and regular shape, uniform element distribution and lattice constant of
Trial sample 2 according to Y x Gd 3-x Sc 2 Ga 3 O 12 (x＝1)
The preparation method of the Y-doped GSGG crystal comprises the following steps of:
(1) Raw material synthesis: according to Y x Gd 3-x Sc 2 Ga 3 O 12 And (x = 1), accurately weighing the raw materials with purity according to the stoichiometric ratio, putting the raw materials into a mixer, uniformly shaking the raw materials for 24 hours, and calcining the raw materials for 8 to 16 hours at 1100 to 1500 ℃ in a muffle furnace in a high-temperature sintering mode after compression molding by using an isostatic press at 200 Mpa.
(2) An iridium crucible is used as a container for crystal growth, raw materials are melted in the crucible in multiple times, a temperature field structure consisting of a zirconium oxide cylinder, zirconium oxide filling sand and an aluminum oxide outer ring is adopted in the crystal furnace, the liquid level position is controlled to be 5-20 mm from the top of the crucible, the crucible is vacuumized, and 50-80% of CO is introduced 2 +20～50％％N 2 。
(3) In the heating process, in order to make the raw materials uniform, the melt temperature is slightly higher than the melting point of the raw materials, the crystal rotating speed is set to be 5-15 rpm, the pulling speed is slightly slow and is 0.5-1 mm/h, and the crystal is automatically seeded in a pulling furnace and is shouldered to grow.
(4) When the crystal growth is finished, the crystal is pulled out of the liquid level, and the crystal can be taken out after the crystal is slowly cooled to the room temperature at a step speed.
This implementationExample YGd 2 Sc 2 Ga 3 O 12 The crystal has good and regular shape, uniform element distribution and lattice constant of
GSGG crystal planar interface growth preparation:
(1) Raw material synthesis: according to Y x Gd 3-x Sc 2 Ga 3 O 12 And (x = 3), accurately weighing the raw materials with the purity according to the stoichiometric ratio, putting the raw materials into a mixer, uniformly shaking the raw materials for 24 hours, and calcining the raw materials for 8 to 16 hours at 1100 to 1500 ℃ in a muffle furnace in a high-temperature sintering mode after compression molding by using an isostatic press at 200 Mpa.
(2) An iridium crucible is used as a container for crystal growth, raw materials are melted in the crucible in multiple times, a temperature field structure consisting of a zirconium oxide cylinder, zirconium oxide filling sand and an aluminum oxide outer ring is adopted in the crystal furnace, the liquid level position is controlled to be 5-20 mm from the top of the crucible, the crucible is vacuumized, and 50-80% of CO is introduced 2 +20～50％％N 2 。
(3) In the heating process, in order to make the raw materials uniform, the melt temperature is slightly higher than the melting point of the raw materials, the crystal rotating speed is set to be 5-15 rpm, the pulling speed is slightly slow, and is 0.5-1 mm/h, so that the crystal is automatically seeded in a pulling furnace and is shouldered to grow.
(4) When the crystal growth is finished, the crystal is pulled out of the liquid level, and the crystal can be taken out after the crystal is slowly cooled to the room temperature at a step speed.
Y grown in this example 3 Sc 2 Ga 3 O 12 The crystal has good and regular shape, uniform element distribution and lattice constant of
Obtaining the cell parameters and the doping variable values of the trial-produced doped GSGG crystal with known cell parameters and doping variable values as shown in the following table:
TABLE 1 comparison table of known Y: GSGG doped crystal unit cell parameters with the doping variables
Determining the adjustment range of the doping variable as x is more than or equal to 1 and less than or equal to 3 according to the doping variable value of the pre-manufactured doped GSGG crystal, the unit cell parameter of which is closest to the unit cell parameter of the prepared rare earth doped magneto-optical film; the repeatedly adjusting the doping variables specifically comprises:
when the unit cell parameters of the tested Y-doped GSGG crystal are determined to be over small, reducing the doping variable x;
and when the unit cell parameter of the tested Y-doped GSGG crystal is determined to be overlarge, the doping variable x is increased.
Trial sample 4 according to Y x Gd 3-x Sc 2 Ga 3 O 12 (x＝2.5)
The preparation method of the Y-doped GSGG crystal comprises the following steps of:
(1) Raw material synthesis: according to Y x Gd 3-x Sc 2 Ga 3 O 12 And (x = 2.5), accurately weighing the pure raw materials according to the stoichiometric ratio, uniformly shaking the raw materials in a mixer for 24 hours, and calcining the raw materials in a muffle furnace for 8 to 16 hours at 1100 to 1500 ℃ in a high-temperature sintering mode after compression molding under an isostatic press of 200 Mpa.
(2) The iridium crucible is used as a container for crystal growth, raw materials are melted in the crucible for multiple times, a temperature field structure formed by a zirconium oxide cylinder, zirconium oxide filling sand and an aluminum oxide outer ring is adopted in the crystal furnace, the liquid level position is controlled to be 5-20 mm away from the top of the crucible, the crucible is vacuumized, and 50-80% of CO is introduced 2 +20～50％％N 2 。
(3) In the heating process, in order to make the raw materials uniform, the melt temperature is slightly higher than the melting point of the raw materials, the crystal rotating speed is set to be 5-15 rpm, the pulling speed is slightly slow and is 0.5-1 mm/h, and the crystal is automatically seeded in a pulling furnace and is shouldered to grow.
(4) When the crystal growth is finished, the crystal is pulled out of the liquid level, and the crystal can be taken out after the crystal is slowly cooled to the room temperature at a step speed.
Y grown in this example 2.5 Gd 0.5 Sc 2 Ga 3 O 12 The crystal has good and regular shape, uniform element distribution and lattice constant of
And reducing the value of the doping variable X again to obtain 2 trial-produced samples:
trial sample 5 according to Y x Gd 3-x Sc 2 Ga 3 O 12 (x＝2)
The preparation method of the Y-doped GSGG crystal comprises the following steps of:
(1) Raw material synthesis: according to Y x Gd 3-x Sc 2 Ga 3 O 12 And (x = 2), accurately weighing the raw materials with purity according to the stoichiometric ratio, putting the raw materials into a mixer, uniformly shaking the raw materials for 24 hours, pressing and molding the raw materials by using an isostatic press at 200Mpa, and calcining the raw materials for 8 to 16 hours at 1100 to 1500 ℃ in a muffle furnace in a high-temperature sintering mode.
(2) An iridium crucible is used as a container for crystal growth, raw materials are melted in the crucible in multiple times, a temperature field structure consisting of a zirconium oxide cylinder, zirconium oxide filling sand and an aluminum oxide outer ring is adopted in the crystal furnace, the liquid level position is controlled to be 5-20 mm from the top of the crucible, the crucible is vacuumized, and 50-80% of CO is introduced 2 +20～50％％N 2 。
(3) In the heating process, in order to make the raw materials uniform, the melt temperature is slightly higher than the melting point of the raw materials, the crystal rotating speed is set to be 5-15 rpm, the pulling speed is slightly slow and is 0.5-1 mm/h, and the crystal is automatically seeded in a pulling furnace and is shouldered to grow.
(4) When the crystal growth is finished, the crystal is pulled out of the liquid level, and the crystal can be taken out after the crystal is slowly cooled to the room temperature at a step speed.
Y grown in this example 2 GdSc 2 Ga 3 O 12 The crystal has good and regular shape, uniform element distribution and lattice constant of
Matching with the parameters of the rare earth doped magneto-optical film unit cellThe substrate material for growing the rare earth-doped magneto-optical film can be prepared by the above method.
Finally, the obtained cell parameters and doping variable values of the trial-produced doped GSGG crystal with known cell parameters and doping variable values are shown in the following table 2, and the crystal is used for developing a substrate material for later rare earth doped magneto-optical film growth.
TABLE 2 comparison table of crystal unit cell parameters of Y-doped GSGG crystal along with the doping variables
Y x Gd 3-x Sc 2 Ga 3 O 12 (X =1,2,2.5) crystalline powder X-ray diffraction pattern comparing Gd for PDF #71-0701 3 Ga 5 O 12 A standard card, as shown in FIG. 1; the measured unit cell parameters of the yttrium (Y) -doped GSGG crystal at different doping amounts are shown in FIG. 2.
It will be understood by those skilled in the art that the foregoing is only an exemplary embodiment of the present invention, and is not intended to limit the invention to the particular forms disclosed, since various modifications, substitutions and improvements within the spirit and scope of the invention are possible and within the scope of the appended claims.
Claims (10)
1. A method for preparing a substrate of a rare earth doped magneto-optical film is characterized by comprising the following steps:
s1, obtaining unit cell parameters of a rare earth doped magneto-optical film to be prepared;
s2, adopting a doped GSGG crystal which has a unique doping variable and has unit cell parameters changing along with the doping variable rule as a substrate;
s3, according to the cell parameters and the doping variable values of the pre-manufactured doped GSGG crystal with known cell parameters and doping variable values and the rule that the cell parameters change along with the doping variable, repeatedly adjusting the doping variable, designing raw material proportion according to the adjusted doping variable, pre-manufacturing the doped GSGG crystal, measuring the cell parameters of the doped GSGG crystal until the cell parameters of the pre-manufactured doped GSGG crystal are matched with the cell parameters of the rare earth-doped magneto-optical film to be prepared, and taking the value of the doping variable as the value of the doping variable of the substrate of the rare earth-doped magneto-optical film;
and S4, designing the raw material ratio according to the doping variable value of the substrate of the rare earth doped magneto-optical film to grow crystals and manufacturing the substrate.
2. The method for preparing a substrate for a rare earth-doped magneto-optical film according to claim 1, wherein the doped GSGG crystal is a Y: GSGG-doped crystal.
3. The method of claim 2, wherein the doped GSGG crystal has a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3, the crystal belongs to garnet cubic system phase, and the change rule of unit cell parameters along with the doping variable x is as follows: monotonically decreasing; cell parameters in
In the meantime.
4. The method for preparing a substrate for a rare earth-doped magneto-optical film according to claim 1, wherein the pre-fabricated doped GSGG crystal is prepared according to a predetermined doping variation and a unit cell parameter of the doped GSGG crystal is measured.
5. The method for preparing a substrate for a rare earth doped magneto-optical film as claimed in claim 1, wherein there are a plurality of said trial doped GSGG crystals with different doping variations, preferably wherein said plurality of doping variations comprises at least a lower doping variation limit and an upper doping variation limit.
6. The method for preparing a substrate for a rare earth-doped magneto-optical film according to claim 5, wherein when the cell parameters vary with the doping variable x, the law is: and when the unit cell parameter changes monotonously, determining the adjustment range of the doping variable according to the doping variable value of the pre-manufactured doping GSGG crystal, the unit cell parameter of which is closest to the unit cell parameter of the prepared rare earth doping magneto-optical film.
7. The method for preparing a substrate for a rare earth-doped magneto-optical film according to claim 1, wherein when the doped GSGG crystal is preferably a Y-doped GSGG crystal, the chemical formula is Y x Gd 3-x Sc 2 Ga 3 O 12 Then, the repeatedly adjusting the doping variables specifically comprises:
when the unit cell parameters of the tested Y-doped GSGG crystal are determined to be over small, reducing the doping variable x;
and when the unit cell parameter of the tested Y-doped GSGG crystal is determined to be overlarge, the doping variable x is increased.
8. The method for preparing a substrate for a rare-earth doped magneto-optical film according to claim 1, wherein all the trial-produced doped GSGG crystals and unit cell parameters thereof are used as trial-produced doped GSGG crystals with known unit cell parameters and doping variable values.
9. The method of claim 1, wherein the process for fabricating the substrate by crystal growth is the same as the process for crystal growth used to pre-fabricate the variable doped GSGG crystal.
10. The GSGG-doped crystal is characterized by being a Y-doped GSGG crystal with a chemical formula of Y x Gd 3-x Sc 2 Ga 3 O 12 Wherein x is more than or equal to 0 and less than or equal to 3, the crystal belongs to garnet cubic system phase, and the change rule of unit cell parameters along with the doping variable x is as follows: monotonically decreasing, i.e. the cell parameter decreases with increasing x, the cell parameter being
In the meantime. />
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