CN115922093A - Method for preparing single crystal silicon surface lattice structure by nanosecond laser irradiation - Google Patents
Method for preparing single crystal silicon surface lattice structure by nanosecond laser irradiation Download PDFInfo
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- CN115922093A CN115922093A CN202310020865.3A CN202310020865A CN115922093A CN 115922093 A CN115922093 A CN 115922093A CN 202310020865 A CN202310020865 A CN 202310020865A CN 115922093 A CN115922093 A CN 115922093A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 7
- 238000009825 accumulation Methods 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 claims abstract description 6
- 238000001020 plasma etching Methods 0.000 claims abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000009826 distribution Methods 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 10
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract 1
- 238000001000 micrograph Methods 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for preparing a lattice structure on the surface of a single crystal silicon by nanosecond laser irradiation, belonging to the field of micro-nano processing of the surface of a material. The method comprises the following steps: sequentially carrying out ultrasonic cleaning on monocrystalline silicon in absolute ethyl alcohol and acetone; laser is focused on the surface of the monocrystalline silicon, nanosecond laser irradiation is carried out on the surface of the monocrystalline silicon under the air environment according to set laser irradiation parameters, and a lattice structure is formed on the surface of the monocrystalline silicon through induction of a plasma etching effect induced by the laser irradiation and the caused surface tension change of the monocrystalline silicon. In addition, based on the difference of temperature accumulation under different laser pulse repetition frequencies, the controllable preparation of the ordered or disordered lattice structure on the surface of the single crystal silicon can be realized. The method has the advantages of simple process flow, environmental protection and the like, and has potential application value in the fields of micro-nano optics, semiconductor industry, photovoltaic solar cells and the like.
Description
Technical Field
The invention relates to the field of micro-nano processing of material surfaces, in particular to a method for preparing a lattice structure on the surface of a single crystal silicon by nanosecond pulse laser irradiation, which has potential application value in the fields of micro-nano optics, semiconductor industry, photovoltaic solar cells and the like.
Background
The monocrystalline silicon becomes a hot material in high and new technical fields such as photovoltaic power generation systems, sensor technology, electronic products, optical devices and the like by virtue of unique physical properties such as wear resistance, high temperature resistance, easy doping and the like. The existing research shows that the functional characteristics of surface wettability, anti-reflection performance and the like can be effectively regulated and controlled by preparing a special surface micro-nano structure on the surface of a single crystal silicon. However, from the perspective of processing and preparation, how to develop a new efficient and controllable preparation method of a large-area micro-nano structure on the surface of monocrystalline silicon becomes a technical problem that the wide application of monocrystalline silicon is limited.
As a non-contact processing method with high efficiency, environmental protection and flexibility, laser processing has become an effective means for performing micro-processing on the surface of a material with the development of short/ultra-short pulse laser processing technology. For example, in 2017 "Optical materials" volume 72, 508-512 (Direct characterization of the con array microstructure on monocrystalline silicon surface by microscopic laser structuring), quanji Wang et al successfully obtained quasi-uniform conical array-like microstructures on the surface of monocrystalline silicon by femtosecond laser irradiation. However, the femtosecond laser processing process is complex and high in cost. Compared with the prior art, the nanosecond laser processing method has the advantages that the processing efficiency and the processing quality are guaranteed, and meanwhile, the processing cost is reduced to a certain extent, so that the method is more suitable for realizing the preparation of the micro-nano structure on the surface of the single crystal silicon.
Disclosure of Invention
The invention aims to provide a method for preparing a lattice structure on the surface of a single crystal silicon by nanosecond pulse laser irradiation so as to solve the problems in the prior art. The invention utilizes the plasma etching effect induced by laser irradiation and the surface tension change of the monocrystalline silicon, and induces and forms a lattice structure on the surface of the monocrystalline silicon. In addition, based on the difference of temperature accumulation under different laser pulse repetition frequencies, the controllable preparation of the ordered or disordered lattice structure on the surface of the single crystal silicon can be realized. The method has the advantages of simple process flow, environmental protection and the like, and has potential application value in the fields of micro-nano optics, semiconductor industry, photovoltaic solar cells and the like. The above purpose of the invention is realized by the following technical scheme:
the method for preparing the lattice structure on the surface of the single crystal silicon by nanosecond pulse laser irradiation is characterized by comprising the following steps of:
(1) Sequentially carrying out ultrasonic cleaning on the monocrystalline silicon sample by using absolute ethyl alcohol and acetone, and airing at room temperature to obtain a clean monocrystalline silicon sample;
(2) Focusing laser on the surface of monocrystalline silicon, preparing a lattice structure on the surface of the monocrystalline silicon by utilizing a plasma etching effect induced by laser irradiation and caused surface tension change of the monocrystalline silicon through regulating and controlling laser irradiation parameters, preparing an ordered or disordered lattice structure on the surface of the monocrystalline silicon based on the difference of temperature accumulation under different laser pulse repetition frequencies, and further obtaining the ordered or disordered large-area lattice structure by carrying out multi-line scanning.
Further, the surface roughness of the monocrystalline silicon in the step (1) is 4nm, the ultrasonic cleaning temperature is 50 ℃, and the cleaning time is 5 minutes.
Further, the laser irradiation parameters in the step (2) are as follows: the laser wavelength is 1064nm, the pulse width is 7ns, the repetition frequency is 300-600 kHz, the spot diameter is 43 mu m, and the laser energy density is 0.539J/cm 2 The scanning speed is 1-6 mm/s, the scanning times is 1 time, the laser energy distribution is Gaussian distribution, wherein disordered lattice structures are obtained when the repetition frequency is 600kHz, and ordered lattice structures are obtained when the repetition frequency is 300 kHz, 400 kHz and 500 kHz.
Further, the overlapping rate between the adjacent scanning lines of the multi-line scanning in the step (2) is 0-20%.
Further, the characteristic period of the ordered lattice structure on the surface of the monocrystalline silicon in the step (2) is 1.05 μm.
Compared with the prior art, the invention has the beneficial effects that:
and inducing the surface of the monocrystalline silicon to form a lattice structure by utilizing the plasma etching effect induced by laser irradiation and the surface tension change of the monocrystalline silicon. In addition, based on the difference of temperature accumulation under different laser pulse repetition frequencies, the controllable preparation of the ordered or disordered lattice structure on the surface of the single crystal silicon can be realized. The method has the advantages of simple process flow, environmental protection and the like, and has potential application value in the fields of micro-nano optics, semiconductor industry, photovoltaic solar cells and the like.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention.
FIG. 1 shows an example of the present invention in which the laser repetition frequency is 600Hz and the laser energy density is 0.539J/cm 2 The laser image of the scanning electron microscope with the disordered lattice structure on the surface of the monocrystalline silicon is prepared by nanosecond laser irradiation;
FIG. 2 shows an example of the present invention in which the repetition frequency is 500Hz, and the laser energy density is 0.539J/cm 2 The nanosecond laser irradiation is used for preparing a scanning electron microscope image of the ordered lattice structure on the surface of the monocrystalline silicon;
FIG. 3 shows an embodiment of the present invention in which the laser repetition frequency is 400Hz and the laser energy density is 0.539J/cm 2 The nanosecond laser irradiation is used for preparing a scanning electron microscope image of the ordered lattice structure on the surface of the monocrystalline silicon;
FIG. 4 shows an example of the present invention in which the laser repetition frequency is 300Hz and the laser energy density is 0.539J/cm 2 The nanosecond laser irradiation is used for preparing a scanning electron microscope image of the ordered lattice structure on the surface of the monocrystalline silicon;
FIG. 5 shows an example of the present invention in which the laser repetition frequency is 600Hz and the laser energy density is 0.539J/cm 2 The lapping rate between adjacent scanning lines is 0 percent, and the scanning electron microscope image of the large-area disordered lattice structure on the surface of the monocrystalline silicon is prepared by nanosecond laser irradiation;
FIG. 6 shows an example of the present invention in which the laser repetition frequency is 500Hz and the laser energy density is 0.539J/cm 2 Nanosecond laser irradiation prepared by the lapping rate between adjacent scanning lines of the scanning line is 0 percent, and the scanning line of the large-area ordered lattice structure on the surface of the single crystal siliconA sub-microscope image;
Detailed Description
The details and embodiments of the present invention are further described below with reference to the accompanying drawings.
The method for preparing the lattice structure on the surface of the single crystal silicon by nanosecond pulse laser irradiation is characterized by comprising the following steps of:
(1) Sequentially carrying out ultrasonic cleaning on the monocrystalline silicon sample by using absolute ethyl alcohol and acetone, and airing at room temperature to obtain a clean monocrystalline silicon sample;
(2) Focusing laser on the surface of monocrystalline silicon, preparing a lattice structure on the surface of the monocrystalline silicon by utilizing a plasma etching effect induced by laser irradiation and caused surface tension change of the monocrystalline silicon through regulating and controlling laser irradiation parameters, preparing an ordered or disordered lattice structure on the surface of the monocrystalline silicon based on the difference of temperature accumulation under different laser pulse repetition frequencies, and further obtaining the ordered or disordered large-area lattice structure by carrying out multi-line scanning.
Further, the surface roughness of the monocrystalline silicon in the step (1) is 4nm, the ultrasonic cleaning temperature is 50 ℃, and the cleaning time is 5 minutes.
Further, the laser irradiation parameters in the step (2) are as follows: the laser wavelength is 1064nm, the pulse width is 7ns, the repetition frequency is 300-600 kHz, the spot diameter is 43 mu m, and the laser energy density is 0.539J/cm 2 The scanning speed is 1-6 mm/s, the scanning times is 1 time, the laser energy distribution is Gaussian distribution, wherein a disordered lattice structure is obtained when the repetition frequency is 600kHz, and an ordered lattice structure is obtained when the repetition frequency is 300, 400 and 500 kHz.
Further, the overlapping rate between the adjacent scanning lines of the multi-line scanning in the step (2) is 0-20%.
Further, the characteristic period of the ordered lattice structure on the surface of the monocrystalline silicon in the step (2) is 1.05 μm.
The test result shows that the ordered or disordered lattice structure can be quickly and efficiently prepared on the surface of the single crystal silicon by nanosecond pulse laser irradiation in the air environment by using the method provided by the invention, wherein the characteristic period of the ordered lattice structure is 1.05 mu m. In addition, an ordered or disordered large-area lattice structure can be obtained by multi-line scanning. The invention has potential application value in the fields of micro-nano optics, semiconductor industry, photovoltaic solar cells and the like.
The above description is only a preferred example of the present invention and is not intended to limit the present invention, and various modifications and changes may be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement and the like of the present invention shall be included in the protection scope of the present invention.
Claims (5)
1. The method for preparing the lattice structure on the surface of the single crystal silicon by nanosecond laser irradiation is characterized by comprising the following steps of:
(1) Sequentially carrying out ultrasonic cleaning on the monocrystalline silicon sample by using absolute ethyl alcohol and acetone, and airing at room temperature to obtain a clean monocrystalline silicon sample;
(2) Focusing laser on the surface of monocrystalline silicon, preparing a lattice structure on the surface of the monocrystalline silicon by utilizing a plasma etching effect induced by laser irradiation and caused surface tension change of the monocrystalline silicon through regulating and controlling laser irradiation parameters, preparing an ordered or disordered lattice structure on the surface of the monocrystalline silicon based on the difference of temperature accumulation under different laser pulse repetition frequencies, and further obtaining the ordered or disordered large-area lattice structure by carrying out multi-line scanning.
2. The method for preparing the lattice structure on the surface of the single crystal silicon by nanosecond laser irradiation as claimed in claim 1, wherein: in the step (1), the surface roughness of the monocrystalline silicon is 4nm, the ultrasonic cleaning temperature is 50 ℃, and the cleaning time is 5 minutes.
3. The method for preparing the lattice structure on the surface of the single crystal silicon by nanosecond laser irradiation as recited in claim 1, wherein: the laser irradiation parameters in the step (2) are as follows: the laser wavelength is 1064nm, the pulse width is 7ns, the repetition frequency is 300-600 kHz, the spot diameter is 43 mu m, and the laser energy density is 0.539J/cm 2 Scanning at a speed of 1-6 mm/sThe frequency is 1, the laser energy distribution is Gaussian distribution, wherein disordered lattice structures are obtained when the repetition frequency is 600kHz, and ordered lattice structures are obtained when the repetition frequency is 300, 400 and 500 kHz.
4. The method for preparing the lattice structure on the surface of the single crystal silicon by nanosecond laser irradiation as claimed in claim 1, wherein: the overlapping rate between the adjacent scanning lines of the multi-line scanning in the step (2) is 0-20%.
5. The method for preparing the periodic lattice structure on the surface of the single crystal silicon by nanosecond laser irradiation as set forth in claim 1, wherein the characteristic period of the ordered lattice structure on the surface of the single crystal silicon in the step (2) is 1.05 μm.
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| CN202310020865.3A CN115922093A (en) | 2023-01-06 | 2023-01-06 | Method for preparing single crystal silicon surface lattice structure by nanosecond laser irradiation |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090321626A1 (en) * | 2006-05-26 | 2009-12-31 | Akos Vertes | Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays |
| CN104900487A (en) * | 2015-04-24 | 2015-09-09 | 中国航空工业集团公司北京长城计量测试技术研究所 | Method and apparatus for preparing black silica by adopting lattice scanning |
| CN112548344A (en) * | 2020-11-18 | 2021-03-26 | 南京理工大学 | Efficient clean thinning method applied to silicon carbide ceramic |
| CN113070565A (en) * | 2021-04-27 | 2021-07-06 | 吉林大学 | Method for preparing large-area conical microstructure on surface of amorphous alloy by nanosecond laser irradiation |
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2023
- 2023-01-06 CN CN202310020865.3A patent/CN115922093A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090321626A1 (en) * | 2006-05-26 | 2009-12-31 | Akos Vertes | Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays |
| CN104900487A (en) * | 2015-04-24 | 2015-09-09 | 中国航空工业集团公司北京长城计量测试技术研究所 | Method and apparatus for preparing black silica by adopting lattice scanning |
| CN112548344A (en) * | 2020-11-18 | 2021-03-26 | 南京理工大学 | Efficient clean thinning method applied to silicon carbide ceramic |
| CN113070565A (en) * | 2021-04-27 | 2021-07-06 | 吉林大学 | Method for preparing large-area conical microstructure on surface of amorphous alloy by nanosecond laser irradiation |
Non-Patent Citations (2)
| Title |
|---|
| 杨宏道;李晓红;李国强;袁春华;唐多昌;徐琴;邱荣;王俊波;: "1064nm纳秒脉冲激光诱导硅表面微结构研究", 物理学报, no. 02, 15 February 2011 (2011-02-15) * |
| 袁春华;李晓红;唐多昌;杨宏道;李国强;: "Nd:YAG纳秒激光诱导硅表面微结构的演化", 物理学报, vol. 59, no. 10, 15 October 2011 (2011-10-15), pages 1 - 3 * |
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