CN115912055A - High-power low-divergence-angle semiconductor laser chip - Google Patents
High-power low-divergence-angle semiconductor laser chip Download PDFInfo
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- CN115912055A CN115912055A CN202211574392.3A CN202211574392A CN115912055A CN 115912055 A CN115912055 A CN 115912055A CN 202211574392 A CN202211574392 A CN 202211574392A CN 115912055 A CN115912055 A CN 115912055A
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Abstract
The invention relates to a high-power low-divergence-angle semiconductor laser chip, which belongs to the field of semiconductor lasers.A laminated structure comprises an N-surface metal, a substrate, an N-type limiting layer, an N-type waveguide layer, a quantum well layer, a P-type waveguide layer, a P-type limiting layer, an insulating layer and a P-surface metal which are sequentially arranged from bottom to top; the ridge waveguide extends along the light-emitting direction of the laser chip, and the two ends of the ridge waveguide are wide and the middle of the ridge waveguide is narrow; the current injection region is formed on the ridge waveguide, the isolation groove region is formed on the ridge waveguide close to the cavity surface and two side regions, the deep groove region is formed on two sides of the ridge waveguide, the deep groove region is triangular in the light emitting direction, and the width of the deep groove region is large at the position close to the cavity surface. The invention can effectively eliminate the thermal lens effect, greatly reduce the slow-axis divergence angle, simultaneously, the ridge waveguide adopts the situation of wide two ends, reduces the accumulation effect of current carriers at the edge of the ridge waveguide, eliminates the peak with stronger power at the edge area in the near-field light spot, avoids the cavity surface damage caused by over-strong local light field, and greatly improves the long-time reliability of the device.
Description
Technical Field
The invention relates to a high-power low-divergence-angle semiconductor laser chip, and belongs to the technical field of semiconductor lasers.
Background
The wide-strip high-power semiconductor laser has high output power, simple preparation process and packaging process, is easy to integrate and produce in batches, and is widely applied to the fields of laser cutting, medical cosmetology, industrial pumping and the like. Generally, a wide-stripe high-power semiconductor laser adopts a ridge stripe process, and current enters an active region through a ridge stripe and is radiated and compounded to generate photons. However, with the continuous development of the industry and other fields, higher requirements are put on the beam quality of the wide-stripe laser, but the ridge structure belongs to a waveguide structure and is used for limiting carriers and an optical field. However, the following technical problems exist when defining the light field: 1. the near-field light spot has a peak with stronger power at the edge, which is very easy to cause the irreversible COD problem. 2. There is a more severe thermal lens effect resulting in a larger slow axis divergence angle.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a high-power low-divergence-angle semiconductor laser chip which can effectively eliminate the thermal lens effect and greatly reduce the divergence angle of a slow axis.
The invention adopts the following technical scheme:
a high-power low-divergence-angle semiconductor laser chip comprises a laminated structure, a ridge waveguide, a current injection region, an isolation groove region and a deep groove region;
the laminated structure comprises an N-surface metal, a substrate, an N-type limiting layer, an N-type waveguide layer, a quantum well layer, a P-type waveguide layer, a P-type limiting layer, an insulating layer and a P-surface metal which are arranged in sequence from bottom to top;
the ridge waveguide extends along the light emitting direction of the semiconductor laser chip, the light emitting direction is the extending direction of the cavity length of the semiconductor laser chip, and the ridge waveguide has the tendency that the two ends are wide and the middle is narrow;
the ridge waveguide is wide near the cavity surface and narrow near the center, and because the current is injected through the current injection region, the current density is reduced due to the expansion of the current at the two ends due to the width of the two ends, so that the current density at the edge is low, the accumulation effect of carriers at the edge of the ridge waveguide is eliminated, the peak with stronger power in the edge area of the near-field light spot is eliminated, and the cavity surface damage caused by the over-strong local light field is avoided;
the current injection region is formed on the ridge waveguide, and the isolation groove region is formed on the ridge waveguide close to the cavity surface and the two side regions thereof, so that the current injection at the cavity surface is reduced, the heat at the cavity surface is further reduced, and the maximum power density allowed by the cavity surface is effectively improved; the deep groove regions are formed on two sides of the ridge waveguide, are triangular in the light emergent direction, and are wide close to the cavity surface, so that the deep groove regions are in the optimal shape obtained through simulation, and the thermal lens effect can be effectively eliminated through the shape.
After etching the ridge waveguide and the deep groove region, the insulating layer is grown by adopting PECVD, and then the insulating layer of the current injection region is etched off, so that the current injection region is formed, wherein the conventional process is adopted in the semiconductor laser process.
The invention can overcome the defect of optical field limitation in the prior art and simultaneously solves the problem of reliability of the semiconductor device during heavy current injection.
Further, the width s1 of the current injection region is smaller than the minimum width of the ridge waveguide, and the width direction of the current injection region is parallel to the cavity surface of the semiconductor laser chip.
Furthermore, the isolation groove region can be obtained through photoetching and corrosion, the width s3 of the isolation groove region is larger than the maximum width s2 of the ridge waveguide, meanwhile, the distance d1 from the light-emitting cavity surface to the isolation groove region close to the light-emitting cavity surface is larger than the distance d2 from the isolation groove region close to the light-emitting cavity surface to the non-light-emitting cavity surface, and the current can be thoroughly isolated from the cavity surface.
Furthermore, the ridge waveguide is prepared by adopting a wet etching process, and all non-ridge waveguide areas are removed by etching.
Further, the length L2 of the current injection region in the light exit direction is smaller than the length L1 of the ridge waveguide.
Furthermore, the deep trench region is obtained by photoetching and etching, and the etching depth of the deep trench region completely penetrates through the N-type limiting layer.
The present invention is not described in detail, and the prior art can be adopted.
The invention has the beneficial effects that:
1. according to the semiconductor laser chip provided by the invention, the deep groove region is prepared, and because no metal grows in the deep groove, a cavity is formed at the deep groove region during packaging, and the cavity can cause reduction of heat dissipation efficiency, so that the heat dissipation efficiency of the region is reduced, and finally, the temperature distribution on the ridge waveguide is uniform, the thermal lens effect is effectively eliminated, and the slow axis divergence angle is greatly reduced. Meanwhile, the ridge waveguide adopts the situation that two ends of the ridge waveguide are wide, the accumulation effect of current carriers on the edge of the ridge waveguide is reduced, the peak with stronger power in the edge area of a near-field light spot is eliminated, the cavity surface damage caused by over-strong local light field is avoided, and the long-time reliability of the device is greatly improved.
2. The invention does not change the later packaging process, and adopts a conventional packaging mode subsequently, thereby improving the performance of the chip and ensuring the production efficiency of the chip.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
FIG. 1 is a schematic cross-sectional view of a high power low divergence angle semiconductor laser chip;
FIG. 2 is a top view of a P-face of a high power low divergence angle semiconductor laser chip;
in the figure: the structure comprises a 1-P surface metal, a 2-insulating layer, a 3-P type limiting layer, a 4-P type waveguide layer, a 5-quantum well layer, a 6-N type waveguide layer, a 7-N type limiting layer, an 8-substrate, a 9-N surface metal, a 10-ridge waveguide, an 11-deep groove region, a 12-current injection region and a 13-isolation groove region.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific examples, but not limited thereto, and the present invention is not described in detail and is in accordance with the conventional techniques in the art.
Example 1
A high-power low-divergence-angle semiconductor laser chip comprises a laminated structure, a ridge waveguide 10, a current injection region 12, an isolation groove region 13 and a deep groove region 11;
the laminated structure comprises an N-surface metal 9, a substrate 8, an N-type limiting layer 7, an N-type waveguide layer 6, a quantum well layer 5, a P-type waveguide layer 4, a P-type limiting layer 3, an insulating layer 2 and a P-surface metal 1 which are arranged in sequence from bottom to top;
the ridge waveguide 10 extends along the light emitting direction of the semiconductor laser chip, the light emitting direction is the extending direction of the cavity length of the semiconductor laser chip, and the ridge waveguide has the tendency that the two ends are wide and the middle is narrow;
the ridge waveguide is wide near the cavity surface and narrow near the center, and because current is injected through the current injection region, the current density is reduced due to the expansion of the current at the two ends due to the wide two ends, so that the current density at the edge is low, the accumulation effect of carriers at the edge of the ridge waveguide is eliminated, the peak with stronger power at the edge area in a near-field light spot is eliminated, and the cavity surface damage caused by the over-strong local light field is avoided;
the current injection region 12 is formed on the ridge waveguide, and the isolation groove region 13 is formed on the ridge waveguide close to the cavity surface and the two side regions thereof, so that the current injection at the cavity surface is reduced, the heat at the cavity surface is further reduced, and the maximum power density allowed by the cavity surface is effectively improved; the deep trench regions 11 are formed on two sides of the ridge waveguide, are triangular in the light-emitting direction, and are wide near the cavity surface, which is the optimal shape obtained through simulation, and the thermal lens effect can be effectively eliminated through the shape.
After etching the ridge waveguide and the deep groove region, the insulating layer 2 is grown by adopting PECVD, and then the insulating layer of the current injection region is etched off, so as to form the current injection region, wherein the conventional process is adopted in the semiconductor laser process.
The invention can overcome the defect of light field limitation in the prior art and simultaneously solve the problem of reliability of the semiconductor device during heavy current injection.
Example 2
A high power low divergence angle semiconductor laser chip, as described in embodiment 1, except that the width s1 of the current injection region 12 is smaller than the minimum width of the ridge waveguide, and the width direction thereof is a direction parallel to the cavity surface of the semiconductor laser chip.
Example 3
A high-power low-divergence-angle semiconductor laser chip, as described in embodiment 1, except that the isolation trench region 13 can be obtained by photolithography and etching, and the width s3 thereof is greater than the maximum width s2 of the ridge waveguide, and meanwhile, the distance d1 from the light-emitting cavity surface to the isolation trench region close to the light-emitting cavity surface is greater than the distance d2 from the non-light-emitting cavity surface to the isolation trench region close to the non-light-emitting cavity surface, so that the current passing through the cavity surface can be completely isolated.
Example 4
A high power low divergence angle semiconductor laser chip, as described in example 1, except that the ridge waveguide 10 is fabricated using a wet etching process to remove all non-ridge waveguide regions by etching.
The length L2 of the current injection region 12 in the light exit direction is smaller than the length L1 of the ridge waveguide.
The deep trench 11 is obtained by photolithography and etching, and the etching depth of the deep trench completely penetrates through the N-type confinement layer.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A high-power low-divergence-angle semiconductor laser chip is characterized by comprising a laminated structure, a ridge waveguide, a current injection region, an isolation groove region and a deep groove region;
the laminated structure comprises an N-surface metal, a substrate, an N-type limiting layer, an N-type waveguide layer, a quantum well layer, a P-type waveguide layer, a P-type limiting layer, an insulating layer and a P-surface metal which are sequentially arranged from bottom to top;
the ridge waveguide extends along the light emitting direction of the semiconductor laser chip, the light emitting direction is the extending direction of the cavity length of the semiconductor laser chip, and the width of two ends of the ridge waveguide is narrow;
the current injection region is formed on the ridge waveguide, the isolation groove region is formed on the ridge waveguide close to the cavity surface and two side regions of the ridge waveguide, the deep groove region is formed on two sides of the ridge waveguide, the deep groove region is triangular in the light emitting direction, and the width of the deep groove region close to the cavity surface is large.
2. A high power low divergence angle semiconductor laser chip according to claim 1, wherein a width s1 of the current injection region is smaller than a minimum width of the ridge waveguide, and a width direction thereof is a direction parallel to a facet of the semiconductor laser chip.
3. A high power low divergence angle semiconductor laser chip according to claim 2, wherein the width s3 of the isolation trench region is larger than the maximum width s2 of the ridge waveguide, and a distance d1 from the light exit facet to the isolation trench region near the light exit facet is larger than a distance d2 from the non-light exit facet to the isolation trench region near the light exit facet.
4. A high power low divergence angle semiconductor laser chip as claimed in claim 3 wherein said ridge waveguide is fabricated using a wet etch process to remove all non-ridge waveguide regions by etching.
5. The high power low divergence angle semiconductor laser chip of claim 4, wherein the length L2 of the current injection region in the light exit direction is less than the length L1 of the ridge waveguide.
6. The high power low divergence angle semiconductor laser chip of claim 5, wherein the etch depth of the deep trench region completely penetrates the N-type confinement layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211574392.3A CN115912055A (en) | 2022-12-08 | 2022-12-08 | High-power low-divergence-angle semiconductor laser chip |
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| CN202211574392.3A CN115912055A (en) | 2022-12-08 | 2022-12-08 | High-power low-divergence-angle semiconductor laser chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116632648A (en) * | 2023-07-19 | 2023-08-22 | 苏州长光华芯光电技术股份有限公司 | Edge-emitting semiconductor light-emitting structure and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116632648A (en) * | 2023-07-19 | 2023-08-22 | 苏州长光华芯光电技术股份有限公司 | Edge-emitting semiconductor light-emitting structure and preparation method thereof |
| CN116632648B (en) * | 2023-07-19 | 2023-12-19 | 苏州长光华芯光电技术股份有限公司 | Edge-emitting semiconductor light-emitting structure and preparation method thereof |
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