CN115911793A - Up-down coupling ultra-wideband high-isolation adjustable band-pass filter - Google Patents
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Abstract
The invention relates to the technical field of radio frequency microwaves, in particular to an up-and-down coupling ultra-wideband high-isolation adjustable band-pass filter, which comprises a filter body, wherein a filter working part is arranged in the filter body, one or more resonant cavities are arranged in the filter working part, a YIG (Yttrium iron) thin film layer is arranged in each resonant cavity, a coupling band group is arranged above the YIG thin film layer, each YIG thin film layer comprises a plurality of YIG thin film structures, a partition plate is arranged between each YIG thin film structure used for receiving input signals and each YIG thin film structure used for outputting signals, each YIG thin film structure comprises a YIG thin film and a substrate, a front coupling band group is arranged on the front side of each YIG thin film structure, and a back coupling band group is arranged on the back side of each YIG thin film structure to form a band-line up-and-down coupling type structure, so that the isolation between the input end and the output end of the filter is further improved, and the suppression of the filter is increased.
Description
Technical Field
The invention relates to the technical field of radio frequency microwave, in particular to an up-down coupling ultra-wideband high-isolation adjustable band-pass filter.
Background
The test and measurement instrument is an indispensable part of the electronic information industry, and the YIG filter is one of the most core devices in the test and measurement equipment. The application of a switching filter component is limited due to comprehensive requirements of ultra wide band, high selectivity, small size and the like in the design of a frequency spectrograph, and a YIG (yttrium iron garnet) tuning filter component is widely applied under the condition. The ultra-wideband tunable filter can realize continuous adjustability of working frequency in an ultra-wideband (such as 2-18 GHz), has the advantages of high selectivity, small size and the like, and is the first choice for realizing ultra-wideband, high selectivity and miniaturization of various electronic systems at present.
At present, most YIG broadband tuning frequency preselector adopts YIG pellets as harmonic oscillators, a coupling structure adopts a coupling ring structure, and the YIG pellet harmonic oscillators are manufactured by Yttrium Iron Garnet (YIG) single crystal growth, directional cutting and mechanochemical grinding and polishing processes. The YIG pellet harmonic oscillator adopts a spherical physical shape, and the pellets obtained by grinding and polishing cannot obtain the crystal orientation of single crystal growth, so that a high-performance YTF filter cannot be designed, expensive instruments and equipment are required for repeated testing to obtain the crystal orientation again, or the crystal orientation is indirectly obtained through continuous debugging and high-low temperature tests in an actual YTF product, and the production efficiency and the reliability of YTF are low.
From the twentieth sixties to the present, the YTF working principle, the microwave circuit design, the magnetic circuit design, the coupling design, the YIG material formula, the manufacturing process and the like are deeply researched abroad. Meanwhile, western countries represented by the united states have conducted a lot of research works in this technical field, and have formed a series of products widely used in systems such as reconnaissance reception for military electronic equipment such as EW, ECM, and ECCM, etc., and YTF technology thereof has reached a relatively high level. A series of gyromagnetic filters ranging from the L-band to the K-band have been developed in the united states and are widely used in military equipment systems and high-end measurement instruments. In this research field, several companies such as Watkins-Johnson, avantek, microLambda, omni YIG have been studied, developed and produced.
For example, chinese patent publication No. CN103346752A discloses a device for real-time correction of the scanning tuning nonlinearity of a YIG tuned filter, wherein the YIG tuned filter used therein uses YIG beads as harmonic oscillators, and most YTFs currently use YIG beads as harmonic oscillators, the coupling structure uses a coupling ring method, and the YIG bead harmonic oscillators are manufactured by YIG single crystal growth, directional cutting, and mechanochemical polishing processes. Because YIG pellet processing and assembly process are complicated, have rigorous requirement on assembly error, improper control can cause the deterioration of YTF performance. And the crystal orientation of the YIG pellets needs to be manually adjusted to achieve the best microwave performance and temperature stability, but in actual debugging, the crystal orientation of the YIG pellets is quite difficult and is not easy to grasp.
Disclosure of Invention
Aiming at the problems, the invention provides an up-and-down coupling ultra-wideband high-isolation adjustable band-pass filter.
The technical scheme is that the up-down coupling ultra-wideband high-isolation adjustable band-pass filter comprises a filter body, wherein a filter working part is arranged in the filter body, at least one resonant cavity is arranged in the filter working part, the resonant cavities transmit microwave signals through coupling band lines, the resonant cavities for receiving the microwave signals and the resonant cavities for outputting the microwave signals are respectively positioned on two sides in the filter working part, and the other resonant cavities are positioned between the resonant cavities for receiving the microwave signals and the resonant cavities for outputting the microwave signals; a YIG thin film structure is arranged in each resonant cavity, a front coupling strip group is arranged on the front side of the YIG thin film structure, and a back coupling strip group is arranged on the back side of the YIG thin film structure.
Furthermore, four resonant cavities are arranged in the working part of the filter, a substrate is arranged in each resonant cavity, the YIG thin film structure is fixed on the substrate, the four resonant cavities are respectively a first resonant cavity, a second resonant cavity, a third resonant cavity and a fourth resonant cavity, the first resonant cavity, the second resonant cavity, the third resonant cavity and the fourth resonant cavity are isolated from each other, the first resonant cavity is used for receiving microwave signals, and the fourth resonant cavity is used for outputting microwave signals.
Further, the filter body is made of a conductive metal or an insulating material coated with a conductive metal.
Optionally, a first YIG thin film structure is arranged in the first resonant cavity, a second YIG thin film structure is arranged in the second resonant cavity, a third YIG thin film structure is arranged in the third resonant cavity, a fourth YIG thin film structure is arranged in the fourth resonant cavity, the substrates include a first substrate and a second substrate, the first substrate is arranged in the first resonant cavity and the second resonant cavity, the first YIG thin film structure and the second YIG thin film structure are both located on the first substrate, the second substrate is arranged in the third resonant cavity and the fourth resonant cavity, and the third YIG thin film structure and the fourth YIG thin film structure are both located on the second substrate.
Further, the front-side coupling strip line group comprises an input strip line, an output strip line and a first coupling strip line, and the back-side coupling strip line group comprises a second coupling strip line and a third coupling strip line.
Furthermore, an input strip line is positioned above the first YIG thin film structure, one end of the input strip line is connected with an input coaxial line arranged in the filter body, and the other end of the input strip line is grounded.
Optionally, the output strip line is located above the fourth YIG thin film structure, one end of the output strip line is connected to an output coaxial line arranged in the filter body, and the other end of the output strip line is grounded.
Furthermore, a second square groove and a third square groove are arranged in the working part of the filter, the second square groove is close to the second resonant cavity, the third square groove is close to the third resonant cavity, a first coupling strip line is positioned above the second YIG thin film structure and the third YIG thin film structure, two ends of the first coupling strip line are grounded and are respectively positioned in the second square groove and the third square groove, and the first coupling strip line sequentially penetrates through a second narrow groove between the second square groove and the second resonant cavity, a first groove between the second resonant cavity and the third resonant cavity, and a third narrow groove between the third resonant cavity and the third square groove.
Optionally, the second coupling strip line is located below the first YIG thin film structure and the second YIG thin film structure, and the second coupling strip line is plated on the back surface of the first substrate.
Further, a third coupling strip line is positioned below the third YIG thin film structure and the fourth YIG thin film structure, and the third coupling strip line is electroplated on the back surface of the fourth substrate.
The beneficial effects of the invention at least comprise one of the following;
1. by using the YIG film as the resonator of the tunable band-pass filter, the crystal orientation of the resonator is not required to be adjusted and positioned, and meanwhile, the preparation of the YIG film is easier than that of the YIG pellets, so that the requirements on the process are reduced, and the debugging efficiency of the filter is improved.
2. The positive coupling strip line group is arranged on the front side of the YIG thin film structure, and the back coupling strip line group is arranged on the back side of the YIG thin film structure, so that a strip line up-down coupling type structure is formed, the coupling of radio frequency magnetic fields between strip lines is further reduced, the isolation between the input end and the output end of the filter is improved, and the out-of-band rejection of the filter is increased.
3. By arranging the partition board between the YIG thin film structure for receiving the input microwave signal and the YIG thin film structure for outputting the microwave signal, the input end and the output end are separated by the partition board, so that the isolation between the input resonance and the output resonance can be ensured to a great extent.
4. The adjustable band-pass filter is formed by exciting the YIG film by using the strip line, the 5-50GHz adjustable filter is realized, a fine structure and a small-size metal ring do not need to be processed and welded, the efficiency of a craftsman assembling the filter is higher, and the mass production of the filter is easier to realize.
5. The filter is simpler to assemble, has small assembly error and is easier to realize by electroplating the coupling strip line on the substrate.
6. Through the resonant cavity that sets up mutual isolation, the resonant cavity that sets up in whole wave filter work portion simultaneously, and be the snakelike arranging, improved the isolation between the input and output end, and then improved the outband of wave filter and restrained.
Drawings
FIG. 1 is a schematic diagram of a filter body structure;
FIG. 2 is a schematic diagram of the filter operation part;
FIG. 3 is a perspective structural diagram of the back of the filter body;
FIG. 4 is a schematic view of a substrate and YIG film;
FIG. 5 is a test chart of a filter under a magnetic field;
the reference numeral 1 denotes a filter body, 2 denotes a filter working section, 3 denotes a first resonant cavity, 4 denotes a second resonant cavity, 5 denotes a third resonant cavity, 6 denotes a fourth resonant cavity, 7 denotes an input strip, 8 denotes an output strip, 9 denotes a first coupling strip, 10 denotes a second coupling strip, 11 denotes a third coupling strip, 12 denotes an input coaxial line, 13 denotes an output coaxial line, 14 denotes a first YIG thin-film structure, 15 denotes a second YIG thin-film structure, 16 denotes a third YIG thin-film structure, 17 denotes a fourth YIG thin-film structure, 18 denotes a first substrate, 21 denotes a second substrate, 22 denotes a first square groove, 23 denotes a second square groove, 24 denotes a third square groove, 25 denotes a fourth square groove, 26 denotes a first narrow groove, 27 denotes a second narrow groove, 28 denotes a third narrow groove, 29 denotes a fourth narrow groove, 30 denotes a first groove, 31 denotes a YIG thin film, 32 denotes a substrate.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, amount and proportion of each component in actual implementation can be changed freely, and the layout of the components can be more complicated.
As shown in fig. 1 to 4, an up-and-down coupling ultra-wideband high-isolation tunable band-pass filter includes a filter body 1, a filter working portion 2 is disposed in the filter body 1, wherein at least one resonant cavity is disposed in the filter working portion 2, and the resonant cavity transmits microwave signals through a coupling strip line, the resonant cavity for receiving the microwave signals and the resonant cavity for outputting the microwave signals are respectively disposed at two sides of the filter working portion 2, and the other resonant cavities are disposed between the two resonant cavities, wherein the two resonant cavities are respectively a resonant cavity for receiving the microwave signals and a resonant cavity for outputting the microwave signals;
and a YIG thin film structure is arranged in each resonant cavity, a front coupling strip group is arranged on the front surface of the YIG thin film structure, a back coupling strip group is arranged on the back surface of the YIG thin film structure, and the YIG thin film structure comprises a YIG thin film 31.
The purpose of the design is that the YIG film is used as the resonator of the tunable band-pass filter, crystal orientation adjustment and positioning of the resonator are not needed, and meanwhile, the preparation of the YIG film is easier than that of a YIG ball, so that the requirement on the process is reduced, and the debugging efficiency of the filter is improved. The positive coupling strip line group is arranged on the front side of the YIG thin film structure, and the back coupling strip line group is arranged on the back side of the YIG thin film structure, so that a strip line up-down coupling type structure is formed, the coupling of radio frequency magnetic fields between strip lines is further reduced, the isolation between the input end and the output end of the filter is improved, and the out-of-band rejection of the filter is increased. The adjustable band-pass filter is formed by exciting the YIG film by using the strip line, the ultra-wideband tunable filter is realized, metal rings with fine structures and small sizes do not need to be processed and welded, the efficiency of a craftsman assembling the filter is higher, and the mass production of the filter is easier to realize.
Meanwhile, in specific implementation, four resonant cavities are arranged in the filter working part 2, each resonant cavity is internally provided with a substrate, the YIG thin film structure is fixed on the substrate, the four resonant cavities are respectively a first resonant cavity 3, a second resonant cavity 4, a third resonant cavity 5 and a fourth resonant cavity 6, the first resonant cavity 3, the second resonant cavity 4, the third resonant cavity 5 and the fourth resonant cavity 6 are isolated from each other, the first resonant cavity 3 is used for receiving microwave signals, and the fourth resonant cavity 6 is used for outputting microwave signals.
It should be noted that the filter body used in this embodiment is made of a conductive metal or an insulating material coated with a conductive metal, the YIG thin film structure generally includes a YIG thin film 31, the YIG thin film is formed on a substrate 32 by using a liquid phase epitaxy technique, and the substrate is a gadolinium gallium garnet substrate, which is generally referred to as "GGG" for short, and is cut into square blocks for use. The substrate provides a necessary carrier for the YIG thin film structure, and the liquid phase epitaxy technology is a prior art, and for example, chinese patent publication No. CN105887201A discloses a similar technology, so how to prepare the YIG thin film structure by the liquid phase epitaxy technology is not described in detail in this embodiment, the thicknesses of the substrate and the YIG thin film in actual use are usually determined by simulation, and generally, the surface where the substrate is located is connected to the substrate, and of course, a person skilled in the art may adopt other forms to realize that the YIG thin film is disposed in the resonant cavity in the implementation scheme, that is, the YIG thin film structure may also not include the substrate.
When the filter is installed, the substrate is placed in the working part of the filter, and is connected with the inner wall of the cavity of the resonant cavity and grounded, wherein the substrate is a carrier of a YIG thin film structure in the embodiment.
It should be noted that, in most usage scenarios, in order to reduce the processing difficulty, the inside of the resonant cavity is chamfered, and meanwhile, the size of the inner chamfer of the resonant cavity is determined based on simulation.
It should also be noted that fig. 4 is only used to show the connection relationship between the substrate and the YIG film and is not used to show the actual size ratio.
Meanwhile, a first YIG thin film structure 14 is arranged in the first resonant cavity 3, a second YIG thin film structure 15 is arranged in the second resonant cavity 4, a third YIG thin film structure 16 is arranged in the third resonant cavity 5, a fourth YIG thin film structure 17 is arranged in the fourth resonant cavity 6, the substrates include a first substrate 18 and a second substrate 21, the first substrate 18 is arranged in the first resonant cavity 3 and the second resonant cavity 4, the first YIG thin film structure 14 and the second YIG thin film structure 15 are both located on the first substrate 18, the second substrate 21 is arranged in the third resonant cavity 5 and the fourth resonant cavity 6, and the third YIG thin film structure 16 and the fourth YIG thin film structure 17 are both located on the second substrate 21.
The front-side coupled strip line group comprises an input strip line 7, an output strip line 8 and a first coupling strip line 9, and the back-side coupled strip line group comprises a second coupling strip line 10 and a third coupling strip line 11.
It is noted that the input strip line 7, the output strip line 8 and the first 9, second 10 and third 11 coupling strip lines are made of a conductive metal material. The widths of the five strip lines, the distances between the strip lines and the YIG thin film structure and the gaps between the YIG thin film structure and the YIG thin film structure are determined according to the design requirements of the filter in a simulation mode.
Therefore, the resonant cavities in the working part of the whole filter are arranged in a snake-like shape, the isolation between the input end and the output end is improved, and the out-of-band rejection of the filter is further improved.
It should be noted that the input strip and the input coaxial line, and the output strip and the output coaxial line are connected by soldering tin.
Meanwhile, the input coaxial line and the output coaxial line are both 50 omega coaxial lines.
In a specific connection relationship, the input strip line 7 is located above the first YIG thin film structure 14, one end of the input strip line 7 is connected to the input coaxial line 12 disposed in the filter body 1, the other end of the input strip line 7 is grounded, the other end of the input strip line 7 is generally inserted into the first square groove 22, the first square groove 22 is disposed on one side of the first resonant cavity 3, and the first resonant cavity 3 is communicated with the first square groove 22 through the first narrow groove 26.
The output strip line 8 is located above the fourth YIG thin-film structure 17, one end of the output strip line 8 is connected to the output coaxial line 13 in the filter body 1, the other end of the output strip line 8 is grounded, the other end of the output strip line 8 is generally inserted into the fourth slot 25, the fourth slot 25 is located on one side of the fourth resonant cavity 6, and the fourth resonant cavity 6 is communicated with the fourth slot 25 through the fourth narrow slot 29.
A second square groove 23 and a third square groove 24 are arranged in the filter working part 2, the second square groove 23 is close to the second resonant cavity 4, the third square groove 24 is close to the third resonant cavity 5, the first coupling strip line 9 is positioned above the second YIG thin film structure 15 and the third YIG thin film structure 16, two ends of the first coupling strip line 9 are grounded and are respectively positioned in the second square groove 23 and the third square groove 24, and the first coupling strip line 9 sequentially passes through a second narrow groove 27 between the second square groove 23 and the second resonant cavity 4, a first groove 30 between the second resonant cavity 4 and the third resonant cavity 5, and a third narrow groove 28 between the third resonant cavity 5 and the third square groove 24.
Wherein the width and depth of the various slots can be determined by simulation according to the design requirements of the filter.
Meanwhile, the second coupling strip line 10 is positioned under the first YIG thin film structure 14 and the second YIG thin film structure 15, and the second coupling strip line 10 is plated on the back surface of the first substrate 18.
Further, the third coupling strip line 11 is positioned under the third YIG thin film structure 16 and the fourth YIG thin film structure 17, and the third coupling strip line 11 is plated on the back surface of the fourth substrate 21.
The design aims to reduce stray coupling generated by a radio frequency magnetic field between the coupling strip lines and improve the isolation performance of the filter by the cross coupling strip line structure. Normally, the output strip line and the input strip line are located on the same plane, and the extension lines are coincident, and the second coupling strip line 10 and the third coupling strip line 11 are arranged in parallel, but the angle adjustment can be performed in a specific use scene. The vertical projections of the input strip line 7, the output strip line 8, the first coupling strip line 9, the second coupling strip line 10 and the third coupling strip line 11 are crossed, the crossing angle is 45-90 degrees, generally 90 degrees, and only the projection of the crossed point of the strip lines needs to be ensured to be positioned on the YIG film structure. Microwave energy coupling between the strip lines can be reduced. The input microwave energy is prevented from being transmitted to the output end through the coupling between the strip lines, and the isolation degree of the whole filter is improved.
The specific working principle of the interior of the whole upper-lower coupling wide-bandwidth adjustable band-pass filter is as follows:
when an input microwave signal is transmitted from an input coaxial line 12 to an input strip line 7, and the frequency of the input microwave signal is the same as the resonance frequency of the YIG film structure, the YIG film structure for receiving the input microwave signal is excited to generate a magnetic field and is coupled with a second coupling strip line 10 located on the back surface of the first substrate, the second coupling strip line 10 couples microwave energy to the second YIG film structure, the second YIG film structure is excited to couple microwave energy to a first coupling strip line 9, the first coupling strip line 9 couples microwave energy to a third YIG film structure, the third YIG film structure is excited to couple microwave energy to a third coupling strip line 10 located on the back of the second substrate, finally, the third coupling strip line 10 couples microwave energy to a fourth YIG film structure, and the fourth YIG film structure is excited to couple microwave energy to an output strip line 8.
It should be noted that when the frequency of the input microwave signal is different from the resonance frequency of the YIG thin film structure, the YIG thin film structure is not excited and thus no energy is transferred.
As shown in fig. 5, an up-and-down coupling wide bandwidth tunable bandpass filter is placed in the middle of two magnetic pole heads of an electromagnet magnetic field, the magnetic field range is 3600Oe to 20000 Oe, where S11 is return loss and S21 is insertion loss, and when the magnetic field range is 3600Oe to 20000 Oe, the center frequency of the corresponding filter is 5GHz to 50GHz, the 3dB bandwidth is about 60MHz, and the out-of-band rejection is greater than 110dBc, typically, when the magnetic field is 7100 Oe, the return loss and insertion loss curve of the filter tuning frequency of 15GHz is given in the figure. As the magnetic field is gradually increased, the center frequency of the filter is gradually shifted toward higher frequencies, but the 3dB bandwidth and out-of-band rejection of the filter can be substantially maintained.
Where S11 is return loss and S21 is insertion loss.
Compared with a common filter, the up-and-down coupling wide-bandwidth adjustable band-pass filter has no parasitic passband outside the band, out-of-band suppression reaches more than 110dBc, meanwhile, the 3dB bandwidth in the tuning range can be basically kept unchanged, insertion loss is small, in-band standing waves are good, a YIG film is used as a resonator of the adjustable band-pass filter, crystal orientation adjustment and positioning of the resonator are not needed, meanwhile, the preparation of the YIG film is easier than that of a YIG small ball, the requirement on the process is lowered, and the debugging efficiency of the filter is improved. The front coupling strip line group and the back coupling strip line group are arranged on the substrate to form a strip line up-down coupling type structure, so that the isolation between the input end and the output end of the filter is further improved, and the out-of-band rejection of the filter is increased. The adjustable band-pass filter is formed by exciting the YIG film by using the strip line, the high-isolation tunable filter is realized, metal rings with fine structures and small sizes do not need to be processed and welded, the efficiency of a craftsman assembling the filter is higher, and the mass production of the filter is easier to realize. The filter is simpler to assemble, has small assembly error and is easier to realize by electroplating the coupling strip line on the substrate. With the resonator structure in a serpentine arrangement, the input and output are isolated and have higher out-of-band rejection. Compared with the common filter, the filter has no parasitic passband outside the band, the out-of-band rejection reaches more than 110dBc, meanwhile, the 3dB bandwidth in the tuning range can be basically kept unchanged, the insertion loss is small, and the in-band standing wave is good.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (10)
1. An up-down coupling ultra-wideband high-isolation adjustable band-pass filter comprises a filter body (1), wherein a filter working part (2) is arranged in the filter body (1), and the up-down coupling ultra-wideband high-isolation adjustable band-pass filter is characterized in that at least one resonant cavity is arranged in the filter working part (2), the resonant cavity transmits microwave signals through a coupling strip line, a resonant cavity for receiving the microwave signals and a resonant cavity for outputting the microwave signals in the resonant cavities are respectively positioned at two sides in the filter working part (2), and the rest resonant cavities are positioned between the resonant cavities for receiving the microwave signals and the resonant cavities for outputting the microwave signals;
and each YIG thin film structure is arranged in each resonant cavity, a front coupling strip group is arranged on the front surface of each YIG thin film structure, and a back coupling strip group is arranged on the back surface of each YIG thin film structure.
2. The ultra-wideband high-isolation tunable band-pass filter coupled up and down according to claim 1, wherein four resonant cavities are disposed in the filter operating portion (2), each resonant cavity is disposed therein with a substrate, the YIG thin film structure is fixed on the substrate, the four resonant cavities are respectively a first resonant cavity (3), a second resonant cavity (4), a third resonant cavity (5) and a fourth resonant cavity (6), and the first resonant cavity (3), the second resonant cavity (4), the third resonant cavity (5) and the fourth resonant cavity (6) are isolated from each other, the first resonant cavity (3) is configured to receive microwave signals, and the fourth resonant cavity (6) is configured to output microwave signals.
3. The up-down coupling ultra-wideband high-isolation tunable bandpass filter according to claim 2, wherein a first YIG thin-film structure (14) is disposed in the first resonant cavity (3), a second YIG thin-film structure (15) is disposed in the second resonant cavity (4), a third YIG thin-film structure (16) is disposed in the third resonant cavity (5), and a fourth YIG thin-film structure (17) is disposed in the fourth resonant cavity (6), the substrates include a first substrate (18) and a second substrate (21), the first substrate (18) is disposed in the first resonant cavity (3) and the second resonant cavity (4), and the first YIG thin-film structure (14) and the second YIG thin-film structure (15) are both located on the first substrate (18), the second substrate (21) is disposed in the third resonant cavity (5) and the fourth resonant cavity (6), and the third YIG thin-film structure (16) and the fourth YIG thin-film structure (17) are both located on the second substrate (21).
4. An up-and-down coupling ultra-wideband high isolation tunable bandpass filter according to claim 3, characterized in that the front coupling strip line group comprises an input strip line (7), an output strip line (8) and a first coupling strip line (9), and the back coupling strip line group comprises a second coupling strip line (10) and a third coupling strip line (11).
5. An up-and-down coupling ultra-wideband high-isolation tunable bandpass filter according to claim 4, characterized in that the input strip line (7) is located above the first YIG thin-film structure (14), one end of the input strip line (7) is connected to the input coaxial line (12) arranged in the filter body (1), and the other end of the input strip line (7) is grounded.
6. An up-and-down coupling ultra-wideband high-isolation tunable band-pass filter according to claim 4, characterized in that the output strip line (8) is located above the fourth YIG thin film structure (17), one end of the output strip line (8) is connected with the output coaxial line (13) arranged in the filter body (1), and the other end of the output strip line (8) is grounded.
7. The up-and-down coupling ultra-wideband high-isolation tunable bandpass filter according to claim 4, characterized in that a second square groove (23) and a third square groove (24) are arranged in the filter operating portion (2), the second square groove (23) is close to the second resonant cavity (4), the third square groove (24) is close to the third resonant cavity (5), the first coupling strip line (9) is located above the second YIG thin film structure (15) and the third YIG thin film structure (16), both ends of the first coupling strip line (9) are grounded and respectively located in the second square groove (23) and the third square groove (24), and the first coupling strip line (9) sequentially passes through the second narrow groove (27) between the second square groove (23) and the second resonant cavity (4), the first groove (30) between the second resonant cavity (4) and the third resonant cavity (5), and the third narrow groove (28) between the third resonant cavity (5) and the third square groove (24).
8. An up-and-down coupling ultra-wideband high-isolation tunable bandpass filter according to claim 4, characterized in that the second coupling strip line (10) is located below the first YIG thin film structure (14) and the second YIG thin film structure (15), and the second coupling strip line (10) is plated on the back of the first substrate (18).
9. An up-and-down coupling ultra wide band high isolation tunable bandpass filter according to claim 4, characterized in that the third coupling strip line (11) is located below the third YIG thin film structure (16) and the fourth YIG thin film structure (17), and the third coupling strip line (11) is plated on the back of the fourth substrate (21).
10. An up-and-down coupling ultra-wideband high isolation tunable bandpass filter according to one of claims 1 to 9, characterized in that the filter body (1) is made of conductive metal or insulating material coated with conductive metal.
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| CN115911793B (en) | 2023-06-02 |
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