CN115902575A - Aging sensor, aging compensation method, chip module and electronic equipment - Google Patents
Aging sensor, aging compensation method, chip module and electronic equipment Download PDFInfo
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Abstract
The application provides an aging sensor, an aging compensation method, a chip module and an electronic device. The aging sensor includes: the system comprises a first ring oscillator, a second ring oscillator, a first counter, a second counter and a calculation module; the first ring oscillator is used for working for a first time length at preset time intervals, and the second ring oscillator is used for continuously working; the first counter is used for counting first oscillation times of the first ring oscillator in an initial first time length and second oscillation times of the first ring oscillator in each subsequent first time length, and the second counter is used for counting third oscillation times of the second ring oscillator in the initial first time length and fourth oscillation times of the second ring oscillator in each subsequent first time length; the calculation module is used for determining a compensation voltage value for carrying out aging compensation on the chip after each preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency, so that dynamic aging compensation of the chip is realized.
Description
Technical Field
The present disclosure relates to chip technologies, and in particular, to an aging sensor, an aging compensation method, a chip module, and an electronic device.
Background
The chip leads to its temperature to rise because of the energy consumption under operating condition, can bring the loss on the chip performance in the service environment of high temperature and high voltage, this life greatly reduced that will lead to the chip, the ageing problem also appears in the chip, the chip ageing can lead to the performance of chip to descend, the serious work chronogenesis that can influence the chip, and then arouse the chip to become invalid, how consequently the ageing resistance has become the focus of the concern in the semiconductor industry.
In the related art, when a chip is designed, allowance is added to a sequential circuit according to the working life of a target chip, and the scheme has the defects that the specification of the chip is reduced, so that the designed chip has an empty performance improvement space, and the design is not converged. Therefore, a new chip anti-aging scheme is needed.
Disclosure of Invention
The application provides an aging sensor, an aging compensation method, a chip module and electronic equipment, and realizes dynamic chip aging compensation.
In a first aspect, the present application provides an aging sensor comprising: the system comprises a first ring oscillator, a second ring oscillator, a first counter, a second counter and a calculation module;
the first ring oscillator is used for working for a first time length at preset time intervals, and the second ring oscillator is used for continuously working;
the first counter is used for counting first oscillation times of the first ring oscillator in an initial first time length and second oscillation times of the first ring oscillator in each subsequent first time length, and the second counter is used for counting third oscillation times of the second ring oscillator in the initial first time length and fourth oscillation times of the second ring oscillator in each subsequent first time length;
the calculation module is used for determining a compensation voltage value for aging compensation of the chip after each preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency.
In one embodiment, further comprising: a first switching element;
the first switch element is connected with the first ring oscillator and used for being closed in the first time length so as to control the first ring oscillator to work;
in one embodiment, the method further comprises: a second switching element;
the second switching element is connected with the second ring oscillator, and the second switching element is used for controlling the second ring oscillator to work continuously.
In one embodiment, the calculation module is configured to determine an aging coefficient according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency, and the fourth oscillation frequency, and determine the compensation voltage value according to the aging coefficient and a voltage sensitivity coefficient corresponding to an operating voltage of the chip.
In one embodiment, further comprising: an array of registers;
the register array is used for storing the corresponding relation between the working voltage and the voltage sensitivity coefficient and outputting the voltage sensitivity coefficient corresponding to the working voltage of the chip to the calculation module.
In one embodiment, the first and second ring oscillators are symmetrically arranged.
In one embodiment, the number of inverters in the first and second ring oscillators is odd and prime
In a second aspect, the present application provides an aging compensation method applied to the aging sensor according to the first aspect, the method including:
controlling the first ring oscillator and the second ring oscillator to work within an initial first time period, acquiring a first oscillation frequency of the first ring oscillator within the initial first time period and a third oscillation frequency of the second ring oscillator within the initial first time period, and then controlling the second ring oscillator to continue working;
after a preset time interval, controlling the first ring oscillator and the second ring oscillator to work for a first time length, acquiring a second oscillation frequency of the first ring oscillator in the first time length and a fourth oscillation frequency of the second ring oscillator in the first time length, and then controlling the second ring oscillator to continue working; and determining a compensation voltage value for carrying out aging compensation on the chip after the preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency, and repeatedly executing the step until the voltage of the chip reaches the maximum working voltage.
In one embodiment, the determining, according to the first oscillation time, the second oscillation time, the third oscillation time, and the fourth oscillation time, a compensation voltage value for performing aging compensation on the chip after each preset time interval includes:
determining an aging coefficient according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency;
and determining the compensation voltage value according to the aging coefficient and a voltage sensitivity coefficient corresponding to the working voltage of the chip.
In one embodiment, said determining an aging factor based on said third number of oscillations and said fourth number of oscillations comprises:
determining the ratio of the second oscillation frequency to the first oscillation frequency as a first change coefficient, and determining the ratio of the fourth oscillation frequency to the third oscillation frequency as a second change coefficient;
determining a difference value of the first variation coefficient and the second variation coefficient as the aging coefficient.
In one embodiment, after obtaining a first number of oscillations of the first ring oscillator within the initial first time period and a third number of oscillations of the second ring oscillator within the initial first time period, the method further comprises:
controlling the second ring oscillator to work for a first duration under the maximum working voltage, and correspondingly acquiring a fifth oscillation frequency of the second ring oscillator working for the first duration under the maximum working voltage;
and determining the voltage sensitivity coefficient according to the third oscillation frequency, the fifth oscillation frequency, the working voltage of the chip and the maximum working voltage.
In a third aspect, the present application provides a chip comprising an aging sensor as described in the first aspect above.
In a fourth aspect, the present application provides a chip module including the chip as described in the third aspect.
In a fifth aspect, the present application provides an electronic device, comprising: a memory, a processor, and a transceiver;
the memory is used for storing a computer program;
the processor is adapted to carry out the method according to the second aspect when the computer program is executed.
In a sixth aspect, the present application provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the method according to the second aspect as described above.
In a seventh aspect, the present application provides a computer program product comprising a computer program which, when executed by a processor, implements the method of the second aspect as described above.
The application provides an aging sensor, an aging compensation method, a chip module and electronic equipment, wherein the aging sensor comprises a first ring oscillator, a second ring oscillator, a first counter, a second counter and a calculation module; the first ring oscillator is used for working for a first time length at preset time intervals, and the second ring oscillator is used for continuously working; the first counter is used for counting first oscillation times of the first ring oscillator in an initial first time length and second oscillation times of the first ring oscillator in each subsequent first time length, and the second counter is used for counting third oscillation times of the second ring oscillator in the initial first time length and fourth oscillation times of the second ring oscillator in each subsequent first time length; the calculation module is used for determining a compensation voltage value for carrying out aging compensation on the chip after each preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency, so that dynamic aging compensation of the chip is realized, the influence of pressurization on aging acceleration is favorably relieved, and the chip is ensured to keep high performance without attenuation and have no function failure in a working state.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a first schematic structural diagram of an aging sensor according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a ring oscillator and a counter provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a degradation sensor according to an embodiment of the present application;
fig. 4 is a schematic flowchart of an aging compensation method according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the related art, when designing a chip, a margin is added to a timing circuit according to the operating life of the target chip, for example, the target operating frequency of the chip is 2GHz, and a frequency reduction of 10% may be caused by aging after 10 years, and when designing the chip, sufficient margin is added to timing information during circuit timing verification, so as to ensure that the operating frequency of the chip can reach at least 1.8GHz, and ensure that the chip can still maintain the operating frequency of 1.8GHz after 10 years, thereby ensuring performance. The disadvantage of this scheme is that the chip specification is reduced, so that the competitiveness of the designed chip is reduced, and the chip is not necessarily used for as long as 10 years, which results in the performance improvement space of the designed chip being left, and the design is not converged, so a new chip anti-aging scheme is urgently needed.
Since the operating frequency of a chip is related to the voltage thereof, generally speaking, under the condition that a circuit meets timing verification, high voltage often brings high frequency, and therefore, it can be considered that the target operating frequency of the chip can still be ensured after the chip is aged to a certain degree by increasing the voltage. However, if a sufficiently high voltage is added to the chip from the beginning, there may be a problem that the high voltage means high power consumption, which further increases the operating temperature of the chip, so that the aging rate is further deteriorated.
To this end, the embodiment of the present application proposes an aging sensor, which uses a Ring Oscillator (RO) as an aging object and another Ring Oscillator as a reference object to monitor a real-time aging state of a chip, and dynamically adjusts the magnitude of compensation voltage according to the real-time aging state of the chip, instead of directly adding a constant voltage value to the chip. Since the aging rate of the chip is reduced with the increase of the operating time, the aging rate is very high when the chip starts to operate (for example, less than one day), and the aging rate becomes slow by one week or one year, so that the dynamic adjustment of the magnitude of the pressurization helps to reduce the influence of the pressurization on the acceleration of the aging, and ensures that the chip keeps high performance without attenuation and function failure under the operating state.
The aging sensor provided by the present application will be described in detail below by way of specific examples. It is to be understood that the following detailed description may be combined with other embodiments, and that the same or similar concepts or processes may not be repeated in some embodiments.
Fig. 1 is a schematic structural diagram of an aging sensor according to an embodiment of the present disclosure. The aging sensor is arranged in the chip. As shown in fig. 1, the degradation sensor includes: a first ring oscillator 101, a second ring oscillator 102, a first counter 103, a second counter 104, and a calculation module 105.
The first ring oscillator 101 is configured to operate for a first duration at predetermined time intervals, and the second ring oscillator 102 is configured to operate continuously.
The first counter 103 counts a first number of oscillations of the first ring oscillator 101 during the initial first period and a second number of oscillations of the first ring oscillator thereafter during each of the first periods, and the second counter 104 counts a third number of oscillations of the second ring oscillator 102 during the initial first period and a fourth number of oscillations of the second ring oscillator thereafter during each of the first periods.
The calculation module 105 is configured to determine a compensation voltage value for performing aging compensation on the chip after each preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency, and the fourth oscillation frequency.
First, a ring oscillator is described, which is a ring-shaped device formed by connecting the output ends and the input ends of three or more odd inverters end to end, and the output of the ring oscillator oscillates at a certain frequency to generate two levels. As the operating time increases, the ring oscillator gradually ages, and the oscillation frequency changes, that is, the oscillation frequency changes within a certain time. Therefore, in the embodiment of the present application, two ring oscillators are used for aging detection, where the second ring oscillator 102 is used as an aging object, the second ring oscillator 102 is continuously operated during the operation of the chip, so that the second ring oscillator 102 reaches the same or close aging state as the chip, and the first ring oscillator 101 is used as a reference object, and when the chip is operated, the first ring oscillator 101 is basically not operated, and only briefly operated to count (i.e., operated for a first time) when the number of oscillations needs to be counted during the initial stage and after each preset time interval.
After each preset time interval, if the second oscillation frequency of the first ring oscillator 101 is different from the first oscillation frequency at the beginning, which may be a change caused by environmental factors such as temperature, humidity, etc., and the fourth oscillation frequency of the second ring oscillator 102 is different from the third oscillation frequency at the beginning, which is a change caused by the environmental factors and aging of the second ring oscillator 102 due to continuous operation, the aging state of the second ring oscillator 102 can be determined by taking the change of the oscillation frequency of the first ring oscillator 101 as a reference and combining the change of the oscillation frequency of the second ring oscillator 102, i.e., the aging state of the second ring oscillator 102 can be determined based on the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency, and the aging state of the second ring oscillator 102 is consistent with the chip, so that a compensation voltage value for compensating the aging of the chip can be determined based on the aging state. Thus, with the change of the use time of the chip, the real-time aging state of the chip can be obtained through the oscillation times of the first ring oscillator 101 and the second ring oscillator 102, so that dynamic aging compensation is performed.
According to the aging sensor provided by the embodiment of the application, one ring oscillator is used as an aging object, the other ring oscillator is used as a reference object to monitor the real-time aging state of a chip, the size of compensation pressurization is dynamically adjusted according to the real-time aging state of the chip, the influence of pressurization on aging acceleration is favorably relieved, and the chip is guaranteed to keep high performance under a working state without being attenuated and have no failure in function.
The aging sensor is further explained on the basis of the above-mentioned embodiments.
As shown in fig. 2, a plurality of inverters connected end to end in a dotted line in fig. 2 constitute a first ring oscillator 101, and a plurality of inverters connected end to end in a solid line constitute a second ring oscillator 102. Optionally, the first ring oscillator 101 and the second ring oscillator 102 are symmetrically disposed to reduce an influence caused by a Layout Dependent Effect (LDE). Optionally, the number of inverters in the first ring oscillator 101 and the second ring oscillator 102 is odd and prime to cancel the harmonic phenomenon in the ring oscillator.
Optionally, the aging sensor further comprises: the first switching element pyung.
The first switching element pyong is connected to the first ring oscillator 101, and the first switching element pyong is configured to be closed for a first time period to control the first ring oscillator 101 to operate;
optionally, the aging sensor further comprises: and a second switching element PAged.
The second switching element PAged is connected to the second ring oscillator 102, and the second switching element PAged is used to control the second ring oscillator 102 to operate continuously.
As shown in fig. 2, the input port Count _ En is a switch for controlling the first counter 103 and the second counter 104, and when the input port Count _ En is at a high level and the power supply (power domain) is normally powered, the first counter 103 and the second counter 104 can operate. The first ring oscillator 101 and the second ring oscillator 102 are controlled by the first switching element pyong and the second switching element PAged, respectively, under the same working environment (same voltage and temperature), the first switching element pyong may be continuously in a conducting state, so that the second ring oscillator 102 in the path continuously works to achieve the aging purpose, and the first switching element pyong is only conducted at the initial stage and when the oscillation frequency needs to be counted after each preset time interval, so that the first ring oscillator 101 works to count.
When counting is needed, the first counter 103 and the second counter 104 are cleared first, the input port is set to be low and invalid, then the input port Count _ En is set to be high and valid, the power supply module 200 supplies power normally, the first switching element pyong and the second switching element Paged are closed simultaneously, the corresponding counter is increased by 1 each time the waveforms of the inverters in the first ring oscillator 101 and the second ring oscillator 102 are inverted, the input port Count _ En is set to be low and invalid again after the first counter 103 and the second counter 104 work for a first time period, and the first counter 103 and the second counter 104 transmit the counting result to the computing module 105 through the output ports ROAged and royong for processing. The number of bits of the output ports of the first counter 103 and the second counter 104 is related to the maximum value of the count, for example, the maximum value of the count is 255, and the number of bits of the output ports is at least 8 bits. After the counting is completed, the input port Count _ En is set to be active at a high level, and only the second switching element Paged is closed to make the second ring oscillator 102 continuously operate. And when the oscillation times need to be counted again after the preset time interval, the process is repeatedly executed.
Optionally, the calculating module 105 is configured to determine an aging coefficient according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency, and the fourth oscillation frequency, and determine a compensation Voltage value according to the aging coefficient and a Voltage Sensitivity (Voltage Sensitivity) coefficient corresponding to a working Voltage of the chip.
Optionally, as shown in fig. 3, the degradation sensor further includes: a register array 106. The oscillator module 301 in fig. 3 is used to simplify the representation of the first and second ring oscillators 101, 102, 103, and 104.
The register array is used for storing the corresponding relation between the working voltage and the voltage sensitivity coefficient and outputting the voltage sensitivity coefficient corresponding to the working voltage of the chip to the calculation module.
The working voltage of the chip refers to the corresponding working voltage of the chip in different application scenes or different working scenes, and is not the real-time accurate voltage value of the chip. For example, the operating voltage of the chip in one operating scenario is 0.8V, the real-time accurate voltage value of the chip in this scenario may fluctuate around 0.8V, and the operating voltage in another operating scenario is 1V, the real-time accurate voltage value of the chip in this scenario may fluctuate around 1V.
How the aging factor, the voltage sensitivity factor, etc. are explained further below in connection with the method embodiments. Fig. 4 is a schematic flowchart of an aging compensation method according to an embodiment of the present application, where the aging compensation method is applied to the aging sensor, and the method includes:
s401: and controlling the first ring oscillator and the second ring oscillator to work within the initial first time period, acquiring a first oscillation frequency a1 of the first ring oscillator within the initial first time period and a third oscillation frequency a3 of the second ring oscillator within the initial first time period, and then controlling the second ring oscillator to continue working.
Wherein, the control of the first ring oscillator and the second ring oscillator to operate in the initial first time period means to operate at the operating voltage V1 of the chip. The number of oscillations of the first and second ring oscillators is initially recorded separately, after which the first ring oscillator is no longer operated as a reference object and the second ring oscillator continues to operate as an aging object.
Optionally, after the first oscillation frequency a1 and the third oscillation frequency a3 are obtained, in order to obtain the voltage sensitivity coefficient s at the working voltage, the second ring oscillator may be further controlled to operate at the maximum working voltage for a first duration, and a fifth oscillation frequency a5 of the second ring oscillator operating at the maximum working voltage for the first duration is correspondingly obtained; and determining a voltage sensitivity coefficient s according to the third oscillation frequency a3, the fifth oscillation frequency a5, the working voltage V1 of the chip and the maximum working voltage V2. Wherein the voltage sensitivity coefficient s is (a 5/a 1-1)/(V2-V1). And after controlling the second ring oscillator to work at the maximum working voltage for the first time period, continuously controlling the second ring oscillator to work at the working voltage.
It should be noted that the voltage sensitivity coefficient can also be obtained by means of simulation test.
S402, after a preset time interval, controlling the first ring oscillator and the second ring oscillator to work for a first time length, acquiring a second oscillation frequency a2 of the first ring oscillator in the first time length and a fourth oscillation frequency a4 of the second ring oscillator in the first time length, and then controlling the second ring oscillator to continue to work; and determining a compensation voltage value P for carrying out aging compensation on the chip after a preset time interval according to the first oscillation frequency a1, the second oscillation frequency a2, the third oscillation frequency a3 and the fourth oscillation frequency a4, and repeatedly executing the step until the voltage of the chip reaches the maximum working voltage V2.
After a preset time interval, the first ring oscillator and the second ring oscillator both work for a first time length to obtain corresponding oscillation times so as to determine a compensation voltage value for aging compensation of the chip, and then the first ring oscillator as a reference object does not work any more, while the second ring oscillator as an aging object continues to work.
Optionally, the aging factor o is determined according to the first oscillation frequency a1, the second oscillation frequency a2, the third oscillation frequency a3, and the fourth oscillation frequency a 4.
Alternatively, the ratio of the second oscillation frequency to the first oscillation frequency a1 is determined as a first coefficient of variation c1, i.e., c1= a2/a1, and the ratio of the fourth oscillation frequency a4 to the third oscillation frequency a3 is determined as a second coefficient of variation c2, i.e., c2= a4/a3. The difference between the first coefficient of variation c1 and the second coefficient of variation c2 is determined as the aging coefficient o, i.e. o = c2-c1.
And determining a compensation voltage value P according to the aging coefficient o and a voltage sensitivity coefficient s corresponding to the working voltage of the chip, wherein P = o/s. If the value of P is less than 0, P is 0. When the chip is subjected to aging compensation, the voltage of the chip is not more than the maximum working voltage V2, so that if the total compensation voltage value is more than or equal to V2-V1 after one or more preset time intervals, the voltage compensation is not carried out any more.
The aging compensation method of the embodiment of the application, through carrying out dynamic adjustment to the power management module of chip, according to the condition dynamic adjustment voltage that the chip is ageing, guarantee that the chip can maintain its performance, be different from the scheme that just increases fixed voltage for the chip at first, in the embodiment of the application, can effectively slow down the influence that the pressurization is ageing to the chip through dynamic pressure regulating to guarantee that the chip need not to increase too big voltage after certain time and keep its working property, further promote the effective working life of chip.
Fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application. As shown in fig. 5, the electronic device 500 includes: memory 501, processor 502, transceiver 503, wherein memory 501 and processor 502 are in communication; illustratively, the memory 501, the processor 502 and the transceiver 503 may communicate via a communication bus 504, the memory 501 being used for storing a computer program, which is executed by the processor 502 to implement the above-described communication method. For example, the processor 502 performs the relevant steps in the above-described method embodiments.
Optionally, the Processor may be a Central Processing Unit (CPU), or may be another general-purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method embodiments disclosed in this application may be directly implemented by a hardware processor, or implemented by a combination of hardware and software modules in a processor.
The embodiment of the application also provides a chip which comprises the aging sensor.
The embodiment of the application also provides a chip module, which comprises the chip.
An embodiment of the present application further provides a computer-readable storage medium, including: on which a computer program is stored which, when being executed by a processor, carries out the method in any of the above-mentioned method embodiments.
Embodiments of the present application further provide a computer program product, which includes a computer program, and when being executed by a processor, the computer program implements the method in any of the above method embodiments.
All or a portion of the steps of implementing the above-described method embodiments may be performed by hardware associated with program instructions. The aforementioned program may be stored in a readable memory. When executed, the program performs steps comprising the method embodiments described above; and the aforementioned memory (storage medium) includes: read-only memory (ROM), RAM, flash memory, hard disk, solid state disk, magnetic tape (magnetic tape), floppy disk (optical disk), and any combination thereof.
Embodiments of the present application are described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processing unit of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processing unit of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to encompass such modifications and variations.
In the present application, the terms "include" and variations thereof may refer to non-limiting inclusions; the term "or" and variations thereof may mean "and/or". The terms "first," "second," and the like in this application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. In the present application, "a plurality" means two or more. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
Claims (16)
1. An aging sensor, comprising: the system comprises a first ring oscillator, a second ring oscillator, a first counter, a second counter and a calculation module;
the first ring oscillator is used for working for a first time length at preset time intervals, and the second ring oscillator is used for continuously working;
the first counter is used for counting first oscillation times of the first ring oscillator in an initial first time length and second oscillation times of the first ring oscillator in each subsequent first time length, and the second counter is used for counting third oscillation times of the second ring oscillator in the initial first time length and fourth oscillation times of the second ring oscillator in each subsequent first time length;
the calculation module is used for determining a compensation voltage value for aging compensation of the chip after each preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency.
2. The degradation sensor of claim 1, further comprising: a first switching element;
the first switch element is connected with the first ring oscillator, and the first switch element is used for being closed in the first time period so as to control the first ring oscillator to work.
3. The degradation sensor of claim 1, further comprising: a second switching element;
the second switching element is connected with the second ring oscillator, and the second switching element is used for controlling the second ring oscillator to work continuously.
4. The aging sensor according to any one of claims 1 to 3,
the calculation module is used for determining an aging coefficient according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency, and determining the compensation voltage value according to the aging coefficient and a voltage sensitivity coefficient corresponding to the working voltage of the chip.
5. The degradation sensor of claim 4, further comprising: an array of registers;
the register array is used for storing the corresponding relation between the working voltage and the voltage sensitivity coefficient and outputting the voltage sensitivity coefficient corresponding to the working voltage of the chip to the computing module.
6. The degradation sensor of any one of claims 1-3, wherein the first ring oscillator and the second ring oscillator are symmetrically disposed.
7. The aging sensor according to any one of claims 1 to 3, wherein the number of inverters in the first ring oscillator and the second ring oscillator is odd and prime.
8. An aging compensation method applied to the aging sensor according to any one of claims 1 to 7, the method comprising:
controlling the first ring oscillator and the second ring oscillator to work within an initial first time period, acquiring a first oscillation frequency of the first ring oscillator within the initial first time period and a third oscillation frequency of the second ring oscillator within the initial first time period, and then controlling the second ring oscillator to continue working;
after a preset time interval, controlling the first ring oscillator and the second ring oscillator to work for a first time length, acquiring a second oscillation frequency of the first ring oscillator in the first time length and a fourth oscillation frequency of the second ring oscillator in the first time length, and then controlling the second ring oscillator to continue working; and determining a compensation voltage value for carrying out aging compensation on the chip after the preset time interval according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency, and repeatedly executing the step until the voltage of the chip reaches the maximum working voltage.
9. The method of claim 8, wherein determining a compensation voltage value for aging compensation of the chip after each of the preset time intervals according to the first oscillation time, the second oscillation time, the third oscillation time and the fourth oscillation time comprises:
determining an aging coefficient according to the first oscillation frequency, the second oscillation frequency, the third oscillation frequency and the fourth oscillation frequency;
and determining the compensation voltage value according to the aging coefficient and a voltage sensitivity coefficient corresponding to the working voltage of the chip.
10. The method of claim 8, wherein determining an aging factor based on the third number of oscillations and the fourth number of oscillations comprises:
determining the ratio of the second oscillation frequency to the first oscillation frequency as a first change coefficient, and determining the ratio of the fourth oscillation frequency to the third oscillation frequency as a second change coefficient;
determining a difference value of the first variation coefficient and the second variation coefficient as the aging coefficient.
11. The method of claim 9 or 10, after obtaining a first number of oscillations of the first ring oscillator within the initial first time period and a third number of oscillations of the second ring oscillator within the initial first time period, further comprising:
controlling the second ring oscillator to work for a first duration under the maximum working voltage, and correspondingly acquiring a fifth oscillation frequency of the second ring oscillator working for the first duration under the maximum working voltage;
and determining the voltage sensitivity coefficient according to the third oscillation frequency, the fifth oscillation frequency, the working voltage of the chip and the maximum working voltage.
12. A chip comprising an aging sensor according to any of claims 1 to 7.
13. A chip module, characterized in that it comprises a chip as claimed in claim 12.
14. An electronic device, comprising: a memory, a processor, and a transceiver;
the memory is used for storing a computer program;
the processor is adapted to carry out the method of any of the preceding claims 8-11 when the computer program is executed.
15. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the method according to any one of the claims 8-11.
16. A computer program product comprising a computer program which, when executed by a processor, carries out the method of any one of claims 8 to 11.
Priority Applications (1)
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