CN115896711A - Laser cavity surface coating method applied to non-airtight packaging condition and semiconductor laser - Google Patents
Laser cavity surface coating method applied to non-airtight packaging condition and semiconductor laser Download PDFInfo
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Abstract
The invention provides a laser cavity surface coating method applied to a non-airtight packaging condition and a semiconductor laser, belongs to the technical field of semiconductor lasers, and aims to solve the technical problem that the non-airtight packaged laser is poor in stability in a high-temperature and high-humidity environment. The method for coating the laser cavity surface comprises the following steps: (1) Cleaving the semiconductor laser wafer into bars, and respectively evaporating a passivation layer on the front cavity surface and the rear cavity surface of each bar; (2) Evaporating an antireflection film on the front cavity surface of the bar, and evaporating a high-reflection film on the rear cavity surface of the bar; (3) At the barRespectively evaporating Ta on the front cavity surface and the rear cavity surface 2 O 5 A film. The invention adopts a simpler film system design to solve the problem of influencing the non-airtightness of the laser under the non-airtight packaging condition of the semiconductor laser, and meets the nondestructive performance test under the high-temperature and high-humidity condition. And the risk of device failure is reduced, and the high reliability under the high-temperature and high-humidity condition is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor lasers, and particularly relates to a method for coating a laser cavity surface under a non-airtight packaging condition and a semiconductor laser.
Background
The optical module is used as a core foundation of a hardware facility of a 5G network, and is accelerating to evolve to a high-speed transmission stage, wherein a core photoelectric chip needs to be protected by hermetic packaging to ensure that the chip stably operates in an outdoor signal base station, however, expensive hermetic packaging also enables enterprises to bear a huge expense requirement, so that non-hermetic packaging will be a reduced trend in the future, especially a laser of the current non-hermetic packaging has been applied to a data center, but the premise of the non-hermetic packaging must be to ensure that an optical device (especially a laser) meets non-hermetic sealing, which is undoubtedly a challenge.
The passivation layer is plated on the laser cavity surface, so that the reliability of the chip can be effectively improved. Generally, the coating film protects the facet and also serves to adjust the threshold current and slope efficiency. To minimize oxidation of the facets during the coating process, cleavage is typically performed in a high vacuum apparatus and the passivation and cavity films are immediately coated. Although the method can better improve the reliability of the device, the method has high requirements on equipment, complex process and high equipment price, and has great challenge and difficulty in dealing with non-airtight packaged chips
In addition, if a non-airtight packaged chip is directly exposed to a severe environment, the existing film system design has the problems of easy deliquescence and instability at high temperature in a high-humidity environment, and meanwhile, oxygen, moisture and the like in the environment react with the end face of the chip, so that defects or product dark current are increased, the reliability of the product is reduced, and the service life of the chip is influenced; therefore, for a communication chip packaged by non-air tightness, the requirement on an end surface film layer is very high, corrosion resistance, low water absorption and good passivation treatment at a cavity surface interface are important marks for judging the quality of a non-air tightness packaged chip product, and further, the performance of the non-air tightness chip can be stable, the reliability is high, and the service life is long.
In order to meet the application requirement of the laser under the high-temperature and high-humidity environment under the non-airtight packaging condition, a method for making the laser non-airtight is urgently needed to meet the application under the non-airtight packaging condition.
Disclosure of Invention
The invention provides a method for coating a laser cavity surface and a semiconductor laser applied to a non-airtight packaging condition, aiming at the technical problem that a non-airtight packaged laser is poor in stability in a high-temperature and high-humidity environment. The method reduces the risk of device failure and improves the high reliability under high temperature and high humidity conditions.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a method for coating a laser cavity surface under a non-airtight packaging condition comprises the following steps:
(1) Cleaving the semiconductor laser wafer into bars, and respectively evaporating a passivation layer on the front cavity surface and the rear cavity surface of each bar;
(2) Evaporating an antireflection film on the front cavity surface of the bar, and evaporating a high-reflection film on the rear cavity surface of the bar;
(3) Respectively evaporating Ta on the front cavity surface and the rear cavity surface of the bar 2 O 5 A film.
In the step (1), the semiconductor laser chip is cleaved and bar-discharged in the air, the front cavity surface and the back cavity surface of the bar are cleaned by plasma, then a passivation layer is evaporated, and dirt or other fine particles introduced after the cavity surfaces are cleaved can be removed by plasma cleaning.
The gas used in the plasma cleaning is Ar and N 2 、H 2 Or NH 3 One or more than two of them.
Material of the passivation layerThe material is ZnSe, si 3 N 4 Or AlN.
The thickness of the passivation layer is 5-10nm.
The antireflection film and the high-reflection film are composed of a plurality of high-refractive-index layers and low-refractive-index layers alternately, the reflection characteristic of light emitting/backlight of the laser is met, and the laser resonant cavity mirror is formed. The reflection reducing film increases the output of light on the light emergent surface, and the high reflection film reduces the output of light on the other surface to form a reflector, thereby further increasing the output of the light emergent surface
The material of the high-refractive-index layer is TiO 2 、Ta 2 O 5 、HfO 2 Or Si; the material of the low refractive index layer is SiO 2 Or Al 2 O 3 。
The thickness of the antireflection film is 200-300nm, and the thickness of the high-reflection film is 500-800nm.
Said Ta 2 O 5 The thickness of the film is 50 to 150nm, preferably, the Ta 2 O 5 The thickness of the film was 80nm.
A light emitting surface of a semiconductor laser sequentially comprises a passivation layer, an antireflection film and Ta from inside to outside 2 O 5 A film, wherein the backlight surface of the semiconductor laser comprises a passivation layer, a high reflective film and Ta 2 O 5 A film.
The invention has the beneficial effects that:
(1) The invention adopts reasonable film system design and uses material Ta 2 O 5 Mechanically strong at high temperatures, high corrosion resistance, poor hydrophilicity under high humidity conditions, ta 2 O 5 The film layer is stable in structure after being boiled in high-temperature water, and the light splitting performance of the film layer is not influenced.
(2) The invention adopts film system design to solve the problem of non-airtightness of the laser under the condition of non-airtight packaging of the semiconductor laser, and Ta is used under the condition of high temperature and high humidity 2 O 5 The film layer can play a good role in protecting the device and ensure that the device can work stably for a long time.
(3) The invention considers the factors that the high-temperature and high-humidity environment can seriously affect the reliability of the device, reduces the failure risk of the device and improves the high reliability under the high-temperature and high-humidity condition.
(4) The invention forms a layer of Ta on the outermost layer of the laser cavity surface 2 O 5 The membranous layer can also play the role of wear-resistant protection, and can also prevent the cavity surface membranous layer of the laser from being damaged mechanically in the testing and packaging processes.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a Ta vapor deposition film obtained in example 1 2 O 5 And (3) coating the film layer with a K9 test glass sheet, and testing the light splitting test chart before and after water boiling.
FIG. 2 shows Ta not deposited in comparative example 1 2 O 5 And (3) coating the film layer with a K9 test glass sheet, and testing the light splitting test chart before and after water boiling.
FIG. 3 is a graph showing the optical power of the semiconductor laser device obtained in example 1 measured before and after ring measurement at 85 ℃ and 85% RH 48H.
FIG. 4 is a graph showing optical power measured before and after ring measurement of 85% RH 48H at 85 ℃ in a semiconductor laser obtained in comparative example 1.
FIG. 5 is a graph showing the test spectra of the semiconductor laser device obtained in example 1 before and after 85% RH 48H ring measurement at 85 ℃.
FIG. 6 is a graph showing the test spectra of the semiconductor laser device obtained in comparative example 1 before and after ring measurement at 85 ℃ and 85% RH 48H.
FIG. 7 is a graph showing the change in threshold current of the semiconductor laser device obtained in example 1 in terms of its performance at 85 ℃ and 85% RH.
FIG. 8 is a graph showing the change in optical power of the semiconductor laser device obtained in example 1 in terms of its performance at 85 ℃ and 85% RH.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
A method for coating a laser cavity surface under the non-airtight packaging condition comprises the following steps:
(1) The semiconductor laser wafer is cleaved in air into bars with a cavity length of 1000um,
(2) Fixing the cleaved bar busbar on a special fixture for coating, placing the bar busbar and a K9 test glass sheet for accompanied coating into a vacuum evaporation coating machine (Lebao ARES1100 is selected), vacuumizing until the pressure is 2.0E-6Torr, setting the temperature at 150 ℃, and baking for 30min;
(3) Starting Hall ion source to perform ion cleaning on the product, selecting Ar as gas, setting gas flow at 30SCCM, voltage at 90V, current at 4A and time at 2min, and performing ion cleaning on one surface of the product
(4) After the ion cleaning is finished, growing a Si passivation film layer, wherein the thickness of the Si passivation layer is 10nm, and the plating rate is
(5) And (5) repeating the steps (3) and (4) to passivate the other surface, wherein the process parameters are the same.
(6) Then carrying out front cavity surface antireflection film layer evaporation on the Bar strip in an evaporation coating machine, wherein the film layer structure and the thickness are as follows 2 -20nm/Si-35nm/SiO 2 -185nm; then, back cavity surface high-reflection film layer evaporation is carried out, and the film layer structure and the thickness are as follows 2 -200nm/Si-85nm/SiO 2 -200nm/Si-85nm/SiO 2 -140nm。
(7) Finally, evaporating a layer of Ta on the outermost layer of the antireflection film and the high-reflection film 2 O 5 Film ofThe empty environment is 2.E-6Torr, and the evaporation rate is 2.E-6Torr
The electron beam current is 150mA, the thickness is 80nm, and Ta coated on the obtained cavity surface 2 O 5 Bar strips of film.
Splitting the Bar strip subjected to film coating to obtain a semiconductor laser, wherein the light emitting surface of the semiconductor laser sequentially comprises a passivation layer, an anti-reflection film and Ta from inside to outside 2 O 5 A film, the backlight surface of the semiconductor laser sequentially comprises a passivation layer, a high-reflectivity film and Ta 2 O 5 A film.
Example 2
A method for coating a laser cavity surface under a non-airtight packaging condition comprises the following steps:
(1) Cleaving the semiconductor laser wafer into bars with cavity length of 1000um in air;
(2) Fixing the cleaved busbar on a special fixture for coating, placing into a vacuum evaporation coating machine (Lebao ARES1100 is selected), vacuumizing until the pressure is 2.0E-6Torr, setting the temperature at 150 ℃, and baking for 30min;
(3) Then starting Hall ion source to carry out ion cleaning on the product, wherein the gas is selected to be N 2 Setting gas flow at 25SCCM, voltage at 90V, current at 4A, and time at 3min, and performing ion cleaning on one surface of the product
(4) After the ion cleaning is finished, the growth of a Si passivation film layer is carried out, the thickness of the ZnSe passivation layer is selected to be 8nm, and the plating rate is
(5) And (5) repeating the steps (3) and (4) to carry out passivation on the other side, wherein the process parameters are the same.
(6) Then, carrying out front cavity surface antireflection film layer evaporation on the Bar strip in an evaporation coating machine, wherein the film layer thickness is as follows 2 O 3 -30nm/Si-40nm/Al 2 O 3 -200nm; then, back cavity surface high-reflection film layer evaporation is carried out, and the film layer thickness is as follows 2 O 3 -200nm/Si-85nm/Al 2 O 3 -200nm/Si-85nm/Al 2 O 3 -140nm。
(7) Finally, evaporating a layer of Ta on the outermost layer of the antireflection film and the high-reflection film 2 O 5 The thickness of the film was 80nm.
Example 3
A method for coating a laser cavity surface under a non-airtight packaging condition comprises the following steps:
(1) Cleaving the semiconductor laser wafer into bars with cavity length of 1000um in air;
(2) Fixing the cleaved bar busbar on a special fixture for coating, placing into a vacuum evaporation coating machine (Lebao ARES 1100), vacuumizing to 2.0E-6Torr, setting the temperature at 150 deg.C, and baking for 30min;
(3) Then starting Hall ion source to carry out ion cleaning on the product, wherein gas is selected to be NH 3 Setting gas flow at 40SCCM, voltage at 90V, current at 4A, and time at 2min, and performing ion cleaning on one surface of the product
(4) After the ion cleaning, si is carried out 3 N 4 Growing a passivation film layer, selecting the thickness of the Si passivation layer as 5nm, and the plating rate as
(5) And (5) repeating the steps (3) and (4) to passivate the other surface, wherein the process parameters are the same.
(6) Then, carrying out front cavity surface antireflection film layer evaporation on the Bar strip in an evaporation coating machine, wherein the film layer thickness is SiO 2 -15nm/TiO 2 -35nm/SiO 2 -135nm/TiO 2 -15nm; then, back cavity surface high-reflection film layer evaporation is carried out, and the film layer thickness is SiO 2 -250nm/Ta 2 O 5 -85nm/SiO 2 -200nm/Ta 2 O 5 -85nm/SiO 2 -180nm。
(7) Finally, evaporating a layer of Ta on the outermost layer of the antireflection film and the high-reflection film 2 O 5 The thickness of the film was 80nm.
Example 4
A method for coating a laser cavity surface under a non-airtight packaging condition comprises the following steps:
(1) The semiconductor laser wafer is cleaved in air into bars with a cavity length of 1000um,
(2) Fixing the cleaved bar busbar on a special fixture for coating, placing into a vacuum evaporation coating machine (Lebao ARES 1100), vacuumizing to 2.0E-6Torr, setting the temperature at 150 deg.C, and baking for 30min;
(3) And then, starting a Hall ion source to perform ion cleaning on the product, wherein the volume ratio of gas is 1: ar and H of 1 2 Setting gas flow at 30SCCM, voltage at 90V, current at 4A, and time at 2min, and performing ion cleaning on one surface of the product
(4) After the ion cleaning is finished, growing an AlN passivation film layer, and selecting the AlN passivation layer with the thickness of 10nm and the plating rate of
(5) And (5) repeating the steps (3) and (4) to passivate the other surface, wherein the process parameters are the same.
(6) Then, carrying out front cavity surface antireflection film layer evaporation on the Bar strip in an evaporation coating machine, wherein the film layer thickness is SiO 2 -40nm/HfO 2 -40nm/SiO 2 -220nm; then, back cavity surface high-reflection film layer evaporation is carried out, and the film layer thickness is SiO 2 -200nm/Si-85nm/SiO 2 -200nm/Si-85nm/SiO 2 -140nm。
(7) Finally, evaporating a layer of Ta on the outermost layer of the antireflection film and the high-reflection film 2 O 5 The thickness of the film was 150nm.
Comparative example 1
(1) The semiconductor laser wafer is cleaved in air into bars with a cavity length of 1000um,
(2) Fixing the cleaved busbar on a special fixture for coating, placing the busbar and a test glass sheet accompanied with K9 plating into a vacuum evaporation coating machine (Lebao ARES1100 is selected), vacuumizing until the pressure is 2.0E-6Torr, setting the temperature at 150 ℃, and baking for 30min;
(3) Starting a Hall ion source to perform ion cleaning on the product, wherein Ar is selected as gas, the gas flow is set to be 30SCCM, 90V is selected as voltage, 4A is set as current, and the time is set to be 2min, and performing ion cleaning on one surface of the product
(4) After the ion cleaning is finished, growing a Si passivation film layer, wherein the thickness of the Si passivation layer is 10nm, and the plating rate is
(5) And (5) repeating the steps (3) and (4) to passivate the other surface, wherein the process parameters are the same.
(6) Then carrying out front cavity surface antireflection film layer evaporation on the Bar strip in an evaporation film plating machine, wherein the film layer thickness is as follows 2 -20nm/Si-35nm/SiO 2 -185nm; back cavity surface high-reflection film layer evaporation, the film layer thickness is SiO 2 -200nm/Si-85nm/SiO 2 -200nm/Si-85nm/SiO 2 -140nm。
Test example
First, the test glass pieces for K9 plating in example 1 and comparative example 1 were subjected to a spectrophotometer test; subsequently, the test glass sheet with plated K9 was boiled in boiling water at 100 ℃ for half an hour and then fished out, and then the spectrophotometer test was performed, and the test results are shown in fig. 1 and fig. 2, where fig. 1 is the before-and-after-boiling spectrophotometer test of the test glass sheet with plated K9 in example 1, and fig. 2 is the before-and-after-boiling spectrophotometer test of the test glass sheet with plated K9 in comparative example 1. As is clear from FIGS. 1 and 2, ta is deposited in an extremely limited environment 2 O 5 The two spectral curves of the film layer before and after boiling K9 test glass sheet are completely coincided, and Ta is not evaporated 2 O 5 Obvious fluctuation appears before and after the film layer is plated with K9 test glass sheet and boiled, which is caused by Ta 2 O 5 Compared with other materials, the material has weak hydrophilicity and good compactness, so the material is placed at the outermost layer to protect the internal film layer from water intrusion and absorption, proving that Ta 2 O 5 High stability of the film.
FIGS. 3 and 4 are graphs showing the results of testing the semiconductor lasers obtained in example 1 and comparative example 1 at 85 ℃ and 85% RH 48H ringAs can be seen from FIG. 3, after the environmental measurement at 85 ℃ and 85% RH 48H, ta was deposited thereon 2 O 5 The optical power of the semiconductor laser of the film is far higher than that of the non-evaporated Ta 2 O 5 Film of semiconductor laser, proving Ta under high temperature and high humidity conditions 2 O 5 The film layer can play a good role in protecting the device.
FIGS. 5 and 6 are graphs showing comparison of test spectra of the semiconductor lasers obtained in example 1 and comparative example 1 after ring measurement at 85 ℃ and 85% RH 48H, and it is shown in FIG. 4 that Ta is again confirmed 2 O 5 Compared with other materials, the material has weak hydrophilicity, good compactness and good protection effect in the period.
Fig. 7 and 8 show the aging reliability tests of Δ Ith and Δ Po of the semiconductor laser device prepared in example 1, which show no failure at 2000H.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A method for coating a laser cavity surface under a non-airtight packaging condition is characterized by comprising the following steps:
(1) Cleaving the semiconductor laser wafer into bars, and respectively evaporating a passivation layer on the front cavity surface and the rear cavity surface of each bar;
(2) Evaporating an antireflection film on the front cavity surface of the bar, and evaporating a high-reflection film on the rear cavity surface of the bar;
(3) Respectively evaporating Ta on the front cavity surface and the rear cavity surface of the bar 2 O 5 A film.
2. The method for coating the cavity surface of the laser under the non-airtight packaging condition as claimed in claim 1, wherein in step (1), the semiconductor laser wafer is cleaved and barred in air, and the passivation layer is evaporated after the front cavity surface and the back cavity surface of the bar are cleaned by plasma.
3. The method of claim 1, wherein the gas used in the plasma cleaning is Ar or N 2 、H 2 Or NH 3 One or more than two of them.
4. The method for laser cavity surface coating under the non-airtight packaging condition as claimed in claim 1, wherein the material of the passivation layer is ZnSe, si 3 N 4 Or AlN.
5. The method of claim 1, wherein the passivation layer has a thickness of 5-10nm.
6. The method for coating the cavity surface of the laser under the non-airtight packaging condition as claimed in claim 1, wherein the antireflection film and the high reflection film are both composed of several layers of high refractive index layer and low refractive index layer alternately.
7. The method of claim 1, wherein the high refractive index layer is made of TiO, and the method is applied to laser cavity surface coating under non-hermetic packaging condition 2 、Ta 2 O 5 、HfO 2 Or Si; the material of the low refractive index layer is SiO 2 Or Al 2 O 3 。
8. The method for coating the laser cavity surface under the non-airtight packaging condition according to claim 1, wherein the thickness of the antireflection film is 200-300nm, and the thickness of the high-reflection film is 500-800nm.
9. The method of claim 1 for laser cavity facet coating applied under non-hermetic package conditions, wherein the Ta 2 O 5 Film(s)The thickness of (a) is 50-150nm.
10. A semiconductor laser prepared by the method for coating the cavity surface of the laser as claimed in any one of claims 1 to 9, wherein the light emitting surface of the semiconductor laser comprises a passivation layer, an antireflection film and Ta sequentially from inside to outside 2 O 5 A film, wherein the backlight surface of the semiconductor laser comprises a passivation layer, a high reflective film and Ta 2 O 5 A film.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117004913A (en) * | 2023-06-26 | 2023-11-07 | 武汉敏芯半导体股份有限公司 | Semiconductor laser end face optical film coating method and semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117004913A (en) * | 2023-06-26 | 2023-11-07 | 武汉敏芯半导体股份有限公司 | Semiconductor laser end face optical film coating method and semiconductor laser |
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