CN115893475A - Device for preparing high-purity indium oxide powder and using method thereof - Google Patents
Device for preparing high-purity indium oxide powder and using method thereof Download PDFInfo
- Publication number
- CN115893475A CN115893475A CN202211467795.8A CN202211467795A CN115893475A CN 115893475 A CN115893475 A CN 115893475A CN 202211467795 A CN202211467795 A CN 202211467795A CN 115893475 A CN115893475 A CN 115893475A
- Authority
- CN
- China
- Prior art keywords
- plate
- plasma
- indium oxide
- pipe
- upper pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 52
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000000843 powder Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000003723 Smelting Methods 0.000 claims abstract description 35
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 230000006698 induction Effects 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 8
- 238000000889 atomisation Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention relates to the field of indium oxide, in particular to a device for preparing high-purity indium oxide powder and a using method thereof, wherein the device comprises a smelting chamber, a smelting pot and an induction coil; the device comprises an atomizing chamber, a gas tank and a pipeline for connecting the atomizing chamber and the gas tank; a cyclone separator and a storage tank; the upper pipe is in sliding connection with a through hole arranged in the smelting pot, the top of the atomizing chamber is provided with a top hole, the upper pipe is in sliding connection with the top hole, and the side surface of the upper pipe close to the top is provided with a plurality of through holes communicated with the interior of the upper pipe; a lower pipe positioned right below the upper pipe; the first plasma module comprises a plurality of first plasma guns, and the first plasma guns face to the gap; the second plasma module comprises a plurality of second plasma guns, and the second plasma guns face to the positions close to the lower end face of the lower pipe; a driving part for driving the upper pipe to do lifting movement. According to the plasma gun, when the first plasma gun is damaged, the second plasma gun can immediately replace the first plasma gun, the plasma gun does not need to be stopped for replacement, and the preparation efficiency is improved.
Description
Technical Field
The invention relates to the field of indium oxide, in particular to a device for preparing high-purity indium oxide powder and a using method thereof.
Background
Indium oxide (In) 2 O 3 ) Is a new n-type transparent semiconductorThe material has wider forbidden band width, smaller resistivity and higher catalytic activity. The ITO (indium tin oxide) target material is prepared from the following components in percentage by mass of 9:1, mixing, granulating, molding and sintering the indium oxide and tin oxide powder. An ITO film formed by sputtering an ITO target has superior optical and electrical properties, and is widely used in industries such as flat panel displays, solar cells, and functional glass. Indium oxide powder accounts for most of the raw materials of the ITO target material, and the prepared indium oxide powder with high purity, uniform particle size and high sintering activity is very important for preparing the high-performance ITO target material.
In a patent with the application number of CN202210946406.3 and the patent name of equipment for preparing high-purity indium oxide by a high-temperature sputtering method, the equipment comprises a simple substance indium melting mechanism, a liquid indium atomizing mechanism, an indium oxide preparation mechanism and an indium oxide dust collecting mechanism which are sequentially arranged, wherein solid simple substance indium is placed in a melting chamber of the simple substance indium melting mechanism, and the melting chamber is used for melting the solid simple substance indium into liquid; the bottom of the melting chamber is connected with an atomizing pipe of the liquid indium atomizing mechanism, and the atomizing pipe is also communicated with an inert gas pipeline; the tail end of the atomizing pipe extends to the inner flame of a plasma torch in a preparation chamber in the indium oxide preparation mechanism, and high-purity oxygen is introduced into the preparation chamber; an automatic pressure relief valve is arranged at the bottom outlet of the preparation chamber, and the indium oxide dust collecting mechanism is communicated with the bottom outlet of the preparation chamber. The applicant finds that the key part of the invention is the plasma torch, if one of the plasma torches has a problem, the plasma torch has to be stopped for replacement, and the preparation efficiency is reduced.
Disclosure of Invention
In view of the above, the present invention is to provide an apparatus for preparing high purity indium oxide powder and a method for using the same, so as to solve the problem that in the process of preparing indium oxide, when a plasma torch is damaged, the plasma torch has to be stopped for replacement, which results in low preparation efficiency.
In view of the above objects, the present invention provides an apparatus for preparing high purity indium oxide powder, comprising:
the smelting furnace comprises a smelting chamber, a smelting pot arranged in the smelting chamber and an induction coil arranged on the outer surface of the smelting pot;
the device comprises an atomizing chamber, a gas tank, a pipeline for connecting the atomizing chamber and the gas tank, and an electromagnetic valve arranged on the pipeline;
the device comprises a cyclone separator and a storage tank communicated with an outlet of the cyclone separator, wherein an inlet of the cyclone separator is communicated with an atomizing chamber, and the storage tank is used for storing indium oxide powder;
the apparatus for preparing high-purity indium oxide powder further comprises:
the upper pipe is slidably connected with a through hole arranged at the bottom of the smelting pot, the top of the atomizing chamber is provided with a top hole, the upper pipe is slidably connected with the top hole and extends into the atomizing chamber, and the side surface of the upper pipe, which is close to the top, is provided with a plurality of through holes communicated with the interior of the upper pipe;
a nozzle disposed in the upper tube;
the lower pipe is positioned under the upper pipe, and a gap is formed between the upper pipe and the lower pipe;
one end of the fixed rod is fixed on the outer side surface of the lower pipe;
a first plasma module comprising a number of first plasma guns facing the gap;
the second plasma module comprises a plurality of second plasma guns, and the second plasma guns face to positions close to the lower end face of the lower pipe;
a driving part for driving the upper pipe to do lifting movement.
Further, the apparatus for preparing high-purity indium oxide powder further comprises:
the first outer sleeve plate is sleeved outside the first plasma guns, a plurality of first plasma guns are distributed on the periphery of the upper pipe in an annular array, and the first outer sleeve plate is in threaded connection with a first side hole formed in the side wall of the atomizing chamber;
the second plasma gun is sleeved on a second outer sleeve plate outside the second plasma gun, the second plasma gun is distributed in an annular array mode on the periphery of the upper pipe, and the second outer sleeve plate is in threaded connection with a second side hole formed in the side wall of the atomizing chamber.
Further, the driving part includes:
the device comprises a push plate and a hinge rod, wherein one end of the hinge rod is hinged with the side surface of an upper pipe positioned in an atomizing chamber, the other end of the hinge rod is hinged with the side surface of the upper pipe positioned in the atomizing chamber, the push plate comprises a transverse plate and a vertical plate arranged on one side of the transverse plate, the transverse plate is rotatably connected with a concave circular groove arranged on the side surface of a first outer sleeve plate, and the concave circular groove penetrates through the end surface of the first outer sleeve plate facing a gap;
one end of the side rod is fixed on the side wall of the atomization chamber, a first sliding groove is formed in the side surface of the side rod, and the top of the transverse plate is connected with the first sliding groove in a sliding mode.
Further, the drive portion is including locating the diaphragm and back to the board that stretches of the side in clearance, the concave circular groove is equipped with the side annular towards the lateral wall in clearance, stretch the board with the side annular rotates and is connected.
Furthermore, the device for preparing the high-purity indium oxide powder further comprises an upper end plate arranged on the lower end face of the upper pipe and a lower end plate arranged on the upper end face of the lower pipe.
Further, the apparatus for preparing high-purity indium oxide powder further comprises:
the plasma torch comprises a third sliding chute and a sliding plate, wherein the third sliding chute is arranged on the inner side wall of the atomization chamber, the sliding plate is in sliding connection with the third sliding chute, a first straight rack is arranged on the side surface of the sliding plate, and the sliding plate corresponds to the second plasma guns one by one;
one end of the spring is fixed on the end face, facing the lower pipe, of the sliding plate, and the other end of the spring is fixed on one side of the third sliding groove;
the top block is arranged on the end face of the sliding plate back to the lower pipe, and in the process that the second outer sleeve plate moves into the atomizing chamber, the top block is in contact with the end face of the second outer sleeve plate facing to the lower pipe;
a gear engaged with the first straight rack, the gear being mounted to a side surface of the fixing lever;
the linkage frame comprises a cross rod and a vertical rod arranged on one side of the cross rod, the cross rod is connected with a second sliding groove arranged on the inner side wall of the atomization chamber in a sliding mode, and a second straight rack meshed with the gear is arranged on the side surface of the cross rod;
the limiting block is arranged at the top of the vertical rod, the lower end plate is provided with a jack penetrating through the upper end surface and the lower end surface of the lower end plate, the diameter of the jack is larger than that of the vertical rod, the vertical rod penetrates through the jack, and the limiting block is positioned above the upper end surface;
locate the end recess of terminal surface under the upper end plate, the lateral wall of end recess is equipped with the spacing hole corresponding with the stopper, and when the drive portion drive top tube moved the lower surface of upper end plate and the upper surface contact of terminal surface down, the stopper got into in the recess on earth, and this moment, the stopper just was to spacing hole.
Further, the lower surface of upper end plate and the upper surface of lower end plate all are equipped with the rubber layer, the lower surface of stopper is equipped with the arc arch.
The invention also provides a using method of the device for preparing the high-purity indium oxide powder, and the device for preparing the high-purity indium oxide powder comprises the following steps that when the first plasma gun and the second plasma gun are normal, the driving part drives the upper pipe to move downwards for a certain distance, so that the width of the gap is increased; then putting indium ingots into a smelting pot, vacuumizing the smelting chamber, introducing inert gas into the smelting chamber after the smelting is finished, opening an electromagnetic valve, introducing oxygen-containing gas (clean air, pure oxygen, mixed gas of oxygen and other inert gases and the like) in an air tank into an atomizing chamber, and then ionizing carrier gas after introducing oxygen into a first plasma gun so as to form a plasma region in the gap; then the induction coil is electrified to melt the indium ingot into indium liquid, the indium liquid enters the plasma region through the nozzle in the upper pipe after passing through the through hole and reacts and combines with the oxygen plasma, the generated indium oxide continuously enters the atomizing chamber for continuous oxidation, and finally the indium oxide powder is obtained through the cyclone separator; if one or more first plasma guns are damaged in the preparation process, the second plasma gun is started immediately after oxygen is introduced, meanwhile, the driving part drives the upper pipe to move downwards, so that the upper pipe is communicated with the lower pipe, and after the completion, indium liquid flows out of the lower pipe, and indium oxide is generated.
The invention has the beneficial effects that: by adopting the device and the using method for preparing the high-purity indium oxide powder, when the first plasma gun is damaged, the second plasma gun is immediately started, and meanwhile, the driving part drives the upper pipe to move downwards so that the upper pipe is communicated with the lower pipe.
Drawings
In order to more clearly illustrate the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description in the prior art will be briefly described below, it is obvious that the drawings in the following description are only the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts.
FIG. 1 is a front cross-sectional view of the present invention;
FIG. 2 is an enlarged view of FIG. 1 at A;
FIG. 3 is an enlarged view at B of FIG. 1;
FIG. 4 is an enlarged view of the present invention at the first plasma gun;
FIG. 5 is an enlarged view of the invention at the upper end plate;
FIG. 6 is a schematic view of the structure of the lower pipe of the present invention;
fig. 7 is an enlarged view at C in fig. 6.
Labeled in the figure as:
1. a smelting chamber; 2. an atomization chamber; 3. a smelting pot; 4. an induction coil; 5. a cyclone separator; 6. a storage tank; 7. a gas tank; 8. an electromagnetic valve; 9. perforating; 10. feeding a pipe; 11. a through hole; 12. a top hole; 14. a lower pipe; 15. a first plasma gun; 16. a first outer race plate; 17. a first side hole; 18. a second plasma gun; 19. a second outer race plate; 20. a second side hole; 21. a hinged lever; 22. fixing the rod; 23. a concave circular groove; 24. a side ring groove; 25. pushing a plate; 26. extending the plate; 28. a side lever; 29. a first chute; 30. an upper end plate; 31. a bottom recess; 32. a limiting hole; 33. a lower end plate; 34. a jack; 35. a linkage frame; 36. a limiting block; 37. a gear; 38. a second chute; 39. a third chute; 40. a slide plate; 41. a top block; 42. a spring; 43. and (4) a nozzle.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to specific embodiments below.
It is to be noted that technical terms or scientific terms used herein should have the ordinary meaning as understood by those having ordinary skill in the art to which the present invention belongs, unless otherwise defined. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
In a first aspect of the present invention, there is provided an apparatus for preparing high purity indium oxide powder, as shown in fig. 1, 2, and 3, comprising:
the smelting device comprises a smelting chamber 1, a smelting pot 3 arranged in the smelting chamber 1 and an induction coil 4 arranged on the outer surface of the smelting pot 3;
the device comprises an atomizing chamber 2, an air tank 7, a pipeline for connecting the atomizing chamber 2 and the air tank 7 and an electromagnetic valve 8 arranged on the pipeline;
the device comprises a cyclone separator 5 and a storage tank 6 communicated with an outlet of the cyclone separator 5, wherein an inlet of the cyclone separator 5 is communicated with the atomizing chamber 2, and the storage tank 6 is used for storing indium oxide powder;
the apparatus for preparing high-purity indium oxide powder further comprises:
the upper pipe 10 is slidably connected with a through hole 9 arranged at the bottom of the smelting pot 3, a top hole 12 is formed in the top of the atomizing chamber 2, the upper pipe 10 is slidably connected with the top hole 12, the upper pipe 10 extends into the atomizing chamber 2, and a plurality of through holes 11 communicated with the inside of the upper pipe 10 are formed in the side surface, close to the top, of the upper pipe 10;
a nozzle 43 disposed in the upper tube 10;
a lower pipe 14 positioned right below the upper pipe 10, wherein a gap is arranged between the upper pipe 10 and the lower pipe 14;
a fixed rod 22 with one end fixed on the inner wall of the atomizing chamber 2, wherein one end of the fixed rod 22 is fixed on the outer side surface of the lower tube 14;
a first plasma module comprising a number of first plasma guns 15, said first plasma guns 15 facing said gap;
a second plasma module comprising a plurality of second plasma guns 18, the second plasma guns 18 being oriented proximate to the lower end face of the down tube 14;
and a driving part for driving the upper pipe 10 to perform a lifting motion.
In the present embodiment, when both the first plasma gun 15 and the second plasma gun 18 are normal, the driving portion drives the upper tube 10 to move downward for a certain distance, so that the width of the gap is increased; then putting indium ingots into a smelting pot 3, vacuumizing the smelting chamber 1, introducing inert gas into the smelting chamber 1 after the smelting is finished, opening an electromagnetic valve 8 at the moment, introducing oxygen-containing gas (clean air, pure oxygen, mixed gas of oxygen and other inert gases and the like) in a gas tank 7 into an atomizing chamber 2, and then ionizing carrier gas after introducing oxygen into a first plasma gun 15 so as to form a plasma region in the gap; then the induction coil 4 is electrified to melt indium ingots into indium liquid, the indium liquid enters a plasma region through a nozzle 43 in the upper pipe 10 after passing through the through hole 11 and reacts and combines with oxygen plasma, the generated indium oxide continuously enters the atomizing chamber 2 for continuous oxidation, and finally, the indium oxide powder is obtained through the cyclone separator 5; if one or more of the first plasma guns 15 is damaged during the preparation process, the second plasma gun 18 is started immediately after oxygen is introduced, and simultaneously, the driving portion drives the upper tube 10 to move downwards so that the upper tube 10 is communicated with the lower tube 14, after the completion, indium liquid flows out of the lower tube 14, and indium oxide is also generated, when the first plasma gun 15 is damaged, the second plasma gun 18 is started immediately, and simultaneously, the driving portion drives the upper tube 10 to move downwards so that the upper tube 10 is communicated with the lower tube 14, during the process, the indium liquid which is not atomized due to the damage of the first plasma gun 15 just flows out of the lower tube 14 and is atomized by the second plasma gun 18, through the invention, during the preparation of indium oxide, when one or more of the first plasma guns 15 is damaged, the first plasma gun 15 can be replaced immediately by the second plasma gun 18 without stopping, so that the preparation efficiency is improved, and further, during the up-down movement of the upper tube 10, the through hole 11 does not move to the outside of the melting pan 3.
As an embodiment, as shown in fig. 3, the apparatus for preparing high purity indium oxide powder further includes:
the first outer sleeve plate 16 is sleeved outside the first plasma guns 15, a plurality of the first plasma guns 15 are distributed on the periphery of the upper pipe 10 in an annular array, and the first outer sleeve plate 16 is in threaded connection with a first side hole 17 arranged on the side wall of the atomizing chamber 2;
the second plasma gun 18 is sleeved with a second outer sleeve plate 19, the second plasma gun 18 is distributed on the periphery of the upper pipe 10 in an annular array mode, and the second outer sleeve plate 19 is in threaded connection with a second side hole 20 formed in the side wall of the atomizing chamber 2.
In this embodiment, the first and second plasma guns 15 and 18 are easily installed and removed by the first and second outer race plates 16 and 19.
As one embodiment, as shown in fig. 3 and 4, the driving unit includes:
the atomizing device comprises a push plate 25 and a hinge rod 21, wherein one end of the hinge rod 21 is hinged with the side surface of the upper tube 10 positioned in the atomizing chamber 2, the other end of the hinge rod 21 is hinged with the side surface of the upper tube 10 positioned in the atomizing chamber 2, the push plate 25 comprises a transverse plate and a vertical plate arranged on one side of the transverse plate, the transverse plate is rotatably connected with a concave circular groove 23 arranged on the side surface of a first outer sleeve plate 16, and the concave circular groove 23 penetrates through the end surface of the first outer sleeve plate 16 facing the gap;
a side lever 28 with one end fixed on the inner side wall of the atomizing chamber 2, a first sliding slot 29 is arranged on the side surface of the side lever 28, and the top of the transverse plate is connected with the first sliding slot 29 in a sliding manner.
In this embodiment, when the first outer sleeve plate 16 is not connected to the first side hole 17, the upper tube 10 is under the action of gravity, so that the lower end surface of the upper tube 10 contacts with the upper end surface of the lower tube 14, and at this time, the vertical plate contacts with the inner side wall of the atomization chamber 2, when the first outer sleeve plate 16 is driven by external force to enter the first side hole 17 and gradually the first outer sleeve plate 16 enters the atomization chamber 2, the transverse plate enters the concave circular groove 23, and after the transverse plate contacts with the side wall of the concave circular groove 23, the first outer sleeve plate 16 drives the push plate 25 to move towards the gap direction, and at this time, the upper tube 10 is driven by the hinge rod 21 to move upwards, and when the tip of the first plasma gun 15 approaches the gap, the first outer sleeve plate 16 stops being driven to rotate.
As an embodiment, as shown in fig. 4, the driving part includes an extension plate 26 disposed on a side surface of the horizontal plate facing away from the gap, a side ring groove 24 is disposed on a side wall of the concave circular groove 23 facing the gap, and the extension plate 26 is rotatably connected to the side ring groove 24.
In this embodiment, when the extension plate 26 enters the concave circular groove 23, the stability of the transverse plate in the concave circular groove 23 can be ensured.
As an embodiment, as shown in fig. 3, 5 and 6, the apparatus for preparing high purity indium oxide powder further includes an upper end plate 30 provided at a lower end surface of the upper tube 10 and a lower end plate 33 provided at an upper end surface of the lower tube 14. This increases the contact area between the lower end surface of upper tube 10 and the upper end surface of lower tube 14, and ensures the sealing property after upper tube 10 and lower tube 14 are communicated.
As an embodiment, as shown in fig. 3, 5, 6, and 7, the apparatus for preparing high purity indium oxide powder further includes:
the plasma torch comprises a third sliding chute 39 arranged on the inner side wall of the atomizing chamber 2 and a sliding plate 40 connected with the third sliding chute 39 in a sliding manner, wherein the side surface of the sliding plate 40 is provided with a first straight rack, and the sliding plate 40 corresponds to the second plasma torch 18 one by one;
a spring 42 having one end fixed to an end surface of the slide plate 40 facing the lower pipe 14, and the other end of the spring 42 fixed to one side of the third slide groove 39;
a top block 41 arranged on the end surface of the sliding plate 40 facing away from the lower tube 14, wherein the top block 41 will contact the end surface of the second outer sheathing plate 19 facing the lower tube 14 during the movement of the second outer sheathing plate 19 into the atomization chamber 2;
a gear 37 engaged with the first straight rack, the gear 37 being mounted to a side surface of the fixing lever 22;
the linkage frame 35 comprises a cross rod and a vertical rod arranged on one side of the cross rod, the cross rod is connected with a second sliding groove 38 arranged on the inner side wall of the atomizing chamber 2 in a sliding mode, and a second straight rack meshed with the gear 37 is arranged on the side surface of the cross rod;
the limiting block 36 is arranged at the top of the vertical rod, the lower end plate 33 is provided with a jack 34 penetrating through the upper end surface and the lower end surface of the lower end plate, the diameter of the jack 34 is larger than that of the vertical rod, the vertical rod penetrates through the jack 34, and the limiting block 36 is positioned above the upper end surface;
the bottom groove 31 is arranged on the lower end face of the upper end plate 30, the side wall of the bottom groove 31 is provided with a limiting hole 32 corresponding to the limiting block 36, when the driving part drives the upper tube 10 to move to the contact between the lower surface of the upper end plate 30 and the upper surface of the lower end face, the limiting block 36 enters the bottom groove 31, and at the moment, the limiting block 36 is just opposite to the limiting hole 32.
In this embodiment, after the first plasma gun 15 is damaged, the first outer sleeve plate 16 can be taken out by external force, and the second plasma gun 18 is gradually installed in the second side hole 20, after the first plasma gun 15 is taken out, the first side hole 17 is sealed, at this time, the upper end plate 30 contacts with the lower end plate 33, during the process that the second outer sleeve plate 19 enters the atomizing chamber 2, before the upper end plate 30 contacts with the lower plate, the top block 41 does not contact with the second outer sleeve plate 19, after the upper end plate 30 contacts with the lower end plate 33, the top block 41 contacts with the second outer sleeve plate 19, and the stopper 36 enters into the bottom groove 31, the stopper 36 is opposite to the stopper hole 32, at this time, the second outer sleeve plate 19 continues to move towards the inside of the atomizing chamber 2, so that the stopper 36 is driven by the gear 37 to enter into the insertion hole 34, and it is ensured that the contact of the upper end plate 30 and the lower end plate 33 is stable when the device vibrates.
In addition, preferably, the lower surface of the upper end plate 30 and the upper surface of the lower end plate 33 are both provided with rubber layers, and the lower surface of the limiting block 36 is provided with an arc-shaped protrusion, so that after the limiting block 36 enters the limiting hole 32, the first end plate and the second end plate are pressed tightly through the arc-shaped protrusion, and the sealing performance of the first end plate and the second end plate is better.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the invention, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity.
The present invention is intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalents, improvements, and the like that may be made without departing from the spirit or scope of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. An apparatus for preparing high purity indium oxide powder, comprising:
the smelting device comprises a smelting chamber (1), a smelting pot (3) arranged in the smelting chamber (1) and an induction coil (4) arranged on the outer surface of the smelting pot (3);
the device comprises an atomizing chamber (2), a gas tank (7), a pipeline connecting the atomizing chamber (2) and the gas tank (7), and an electromagnetic valve (8) arranged on the pipeline;
the device comprises a cyclone separator (5) and a storage tank (6) communicated with an outlet of the cyclone separator (5), wherein an inlet of the cyclone separator (5) is communicated with an atomizing chamber (2), and the storage tank (6) is used for storing indium oxide powder;
the device for preparing the high-purity indium oxide powder is characterized by further comprising:
the upper pipe (10) is connected with a through hole (9) arranged at the bottom of the smelting pot (3) in a sliding manner, a top hole (12) is formed in the top of the atomizing chamber (2), the upper pipe (10) is connected with the top hole (12) in a sliding manner, the upper pipe (10) extends into the atomizing chamber (2), and a plurality of through holes (11) communicated with the interior of the upper pipe (10) are formed in the side surface, close to the top, of the upper pipe (10);
a nozzle (43) disposed in the upper pipe (10);
a lower pipe (14) positioned right below the upper pipe (10), wherein a gap is formed between the upper pipe (10) and the lower pipe (14);
one end of the fixing rod (22) is fixed on the inner wall of the atomizing chamber (2), and one end of the fixing rod (22) is fixed on the outer side surface of the lower pipe (14);
a first plasma module comprising a number of first plasma guns (15), said first plasma guns (15) facing said gap;
a second plasma module comprising a plurality of second plasma guns (18), wherein the second plasma guns (18) face to a position close to the lower end face of the lower pipe (14);
a driving part for driving the upper pipe (10) to do lifting movement.
2. The apparatus for preparing high purity indium oxide powder according to claim 1, further comprising:
the first outer sleeve plate (16) is sleeved outside the first plasma guns (15), the first plasma guns (15) are distributed on the periphery of the upper pipe (10) in an annular array mode, and the first outer sleeve plate (16) is in threaded connection with first side holes (17) formed in the side wall of the atomizing chamber (2);
the cover is in second plasma gun (18) outside second jacket board (19), and is a plurality of second plasma gun (18) are peripheral at upper tube (10) and are the annular array and distribute, and second jacket board (19) and second side opening (20) threaded connection who locates the atomizer chamber (2) lateral wall.
3. The apparatus for producing a high purity indium oxide powder according to claim 2, wherein the driving section comprises:
the atomizing device comprises a push plate (25) and a hinge rod (21) with one end hinged to the side surface of the push plate (25), the other end of the hinge rod (21) is hinged to the side surface, located on the atomizing chamber (2), of the upper pipe (10), the push plate (25) comprises a transverse plate and a vertical plate arranged on one side of the transverse plate, the transverse plate is rotatably connected with a concave circular groove (23) arranged on the side surface of the first outer sleeve plate (16), and the concave circular groove (23) penetrates through the end surface, facing the gap, of the first outer sleeve plate (16);
one end of the side rod (28) is fixed on the inner side wall of the atomizing chamber (2), a first sliding groove (29) is formed in the side surface of the side rod (28), and the top of the vertical plate is connected with the first sliding groove (29) in a sliding mode.
4. The device for preparing high-purity indium oxide powder according to claim 3, wherein the driving part comprises a protruding plate (26) arranged on the side surface of the transverse plate facing away from the gap, the side wall of the concave circular groove (23) facing the gap is provided with a side annular groove (24), and the protruding plate (26) is rotatably connected with the side annular groove (24).
5. An apparatus for preparing high purity indium oxide powder according to claim 4, wherein said apparatus further comprises an upper end plate (30) provided at the lower end surface of the upper tube (10) and a lower end plate (33) provided at the upper end surface of the lower tube (14).
6. The apparatus for preparing high purity indium oxide powder according to claim 5, further comprising:
the plasma torch comprises a third sliding chute (39) arranged on the inner side wall of the atomizing chamber (2) and a sliding plate (40) in sliding connection with the third sliding chute (39), wherein a first straight rack is arranged on the side surface of the sliding plate (40), and the sliding plate (40) corresponds to the second plasma guns (18) one by one;
a spring (42) with one end fixed on the end surface of the sliding plate (40) facing the lower pipe (14), and the other end of the spring (42) is fixed on one side of the third sliding chute (39);
a top block (41) arranged on the end surface of the sliding plate (40) facing away from the lower pipe (14), wherein the top block (41) is contacted with the end surface of the second outer sleeve plate (19) facing towards the lower pipe (14) in the process that the second outer sleeve plate (19) moves towards the atomizing chamber (2);
a gear (37) engaged with the first straight rack, the gear (37) being mounted to a side surface of the fixing lever (22);
the linkage frame (35) comprises a cross rod and a vertical rod arranged on one side of the cross rod, the cross rod is in sliding connection with a second sliding groove (38) arranged on the inner side wall of the atomizing chamber (2), and a second straight rack meshed with the gear (37) is arranged on the side surface of the cross rod;
the limiting block (36) is arranged at the top of the vertical rod, the lower end plate (33) is provided with a jack (34) penetrating through the upper end surface and the lower end surface of the lower end plate, the diameter of the jack (34) is larger than that of the vertical rod, the vertical rod penetrates through the jack (34), and the limiting block (36) is positioned above the upper end surface;
locate end groove (31) of terminal surface under upper end plate (30), the lateral wall of end groove (31) is equipped with spacing hole (32) corresponding with stopper (36), when drive portion drive upper tube (10) moved the lower surface of upper end plate (30) and the upper surface contact of terminal surface down, stopper (36) get into in recess (31) to the end, and this moment, stopper (36) just to spacing hole (32).
7. The apparatus for preparing high purity indium oxide powder according to claim 6, wherein the lower surface of the upper end plate (30) and the upper surface of the lower end plate (33) are each provided with a rubber layer, and the lower surface of the stopper (36) is provided with an arc-shaped protrusion.
8. Use of the apparatus for producing high purity indium oxide powder according to any one of claims 1 to 7, characterized by comprising the steps of: when the first plasma gun (15) and the second plasma gun (18) are normal, the driving part drives the upper pipe (10) to move downwards for a certain distance, so that the width of the gap is increased; then putting indium ingots into a smelting pot (3), vacuumizing the smelting chamber (1), introducing inert gas into the smelting chamber (1) after the smelting is finished, opening an electromagnetic valve (8), introducing oxygen in a gas tank (7) into an atomizing chamber (2), introducing oxygen into a first plasma gun (15), and then ionizing carrier gas to form a plasma region in the gap; then an induction coil (4) is electrified to melt indium ingots into indium liquid, the indium liquid flows into a plasma region through an upper pipe (10) after passing through a through hole (11) and reacts and combines with oxygen plasma, the generated indium oxide continuously enters an atomizing chamber (2) for continuous oxidation, and finally is cooled, and indium oxide powder is obtained through a cyclone separator (5); if one or more first plasma guns (15) are damaged in the preparation process, the second plasma gun (18) is started immediately after oxygen is introduced, meanwhile, the driving part drives the upper pipe (10) to move downwards, so that the upper pipe (10) is communicated with the lower pipe (14), and after the completion, indium liquid flows out of the lower pipe (14), and indium oxide is also generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211467795.8A CN115893475B (en) | 2022-11-22 | 2022-11-22 | Device for preparing high-purity indium oxide powder and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211467795.8A CN115893475B (en) | 2022-11-22 | 2022-11-22 | Device for preparing high-purity indium oxide powder and application method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115893475A true CN115893475A (en) | 2023-04-04 |
| CN115893475B CN115893475B (en) | 2024-06-04 |
Family
ID=86472219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211467795.8A Active CN115893475B (en) | 2022-11-22 | 2022-11-22 | Device for preparing high-purity indium oxide powder and application method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115893475B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689468A (en) * | 1986-02-10 | 1987-08-25 | Electro-Plasma, Inc. | Method of and apparatus providing oxide reduction in a plasma environment |
| FR2909015A1 (en) * | 2006-11-27 | 2008-05-30 | Europlasma Sa | DEVICE AND METHOD FOR INTEGRATION BY PLASMA FUSION OF TOXIC MATERIALS. |
| KR20120127281A (en) * | 2011-05-12 | 2012-11-21 | 도쿄엘렉트론가부시키가이샤 | Film forming apparatus, film forming method and storage medium |
| CN204396886U (en) * | 2015-01-30 | 2015-06-17 | 陕西维克德科技开发有限公司 | For the preparation facilities of spherical rare metal powder |
| CN111014700A (en) * | 2019-12-11 | 2020-04-17 | 湖南天际智慧材料科技有限公司 | Device for preparing high-purity nano material by vacuum crucible-free smelting plasma |
| CN115072766A (en) * | 2022-08-08 | 2022-09-20 | 湖南工业大学 | Equipment for preparing high-purity indium oxide by high-temperature sputtering method |
-
2022
- 2022-11-22 CN CN202211467795.8A patent/CN115893475B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689468A (en) * | 1986-02-10 | 1987-08-25 | Electro-Plasma, Inc. | Method of and apparatus providing oxide reduction in a plasma environment |
| FR2909015A1 (en) * | 2006-11-27 | 2008-05-30 | Europlasma Sa | DEVICE AND METHOD FOR INTEGRATION BY PLASMA FUSION OF TOXIC MATERIALS. |
| KR20120127281A (en) * | 2011-05-12 | 2012-11-21 | 도쿄엘렉트론가부시키가이샤 | Film forming apparatus, film forming method and storage medium |
| CN204396886U (en) * | 2015-01-30 | 2015-06-17 | 陕西维克德科技开发有限公司 | For the preparation facilities of spherical rare metal powder |
| CN111014700A (en) * | 2019-12-11 | 2020-04-17 | 湖南天际智慧材料科技有限公司 | Device for preparing high-purity nano material by vacuum crucible-free smelting plasma |
| CN115072766A (en) * | 2022-08-08 | 2022-09-20 | 湖南工业大学 | Equipment for preparing high-purity indium oxide by high-temperature sputtering method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115893475B (en) | 2024-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203715724U (en) | Novel laser-cladding halt-free feeding negative pressure type powder feeder | |
| CN206936613U (en) | Automatic soldering device | |
| KR20100017736A (en) | Treatment system for flat substrates | |
| US8475596B2 (en) | Apparatus to process coating material using flame nozzle and evaporation deposition device having same | |
| KR20140049217A (en) | Downward type evaporation source and thin-film deposition apparatus having the same | |
| CN115893475A (en) | Device for preparing high-purity indium oxide powder and using method thereof | |
| US3752610A (en) | Device for producing fine powder of liquid metal | |
| CN111545766A (en) | Equipment and method for preparing high-purity spherical metal powder | |
| CN1831597A (en) | Substrate carrying method and substrate carrying apparatus | |
| KR102149657B1 (en) | A Apparatus for Depositing Large Area Thin Film | |
| CN101288908A (en) | Preparation method of special alloy zinc powder for mercury-free battery | |
| CN210084345U (en) | Bottle cap positive and negative screening device | |
| CN210676946U (en) | Plasma arc spheroidizing powder device | |
| CN108262490B (en) | Nitrogen cooling method and system for silver powder preparation process of touch screen | |
| SK17042002A3 (en) | A method and an apparatus for recovery of metals | |
| CN212551739U (en) | Atomizing chamber vacuum pumping mechanism | |
| CN211889008U (en) | 3D prints preparation facilities with metal powder | |
| CN210702560U (en) | Printing equipment | |
| CN208644062U (en) | Transmit cleaning system | |
| KR20140082638A (en) | Cartridge reactor for production of materials via the chemical vapor deposition process | |
| CN110961641A (en) | Preparation device and preparation method of metal powder for 3D printing | |
| CN208802573U (en) | A kind of handling equipment loading liquid crystal display | |
| KR101872305B1 (en) | Device and method for manufacturing metal ball | |
| CN210702576U (en) | Device for preparing rare metal spherical powder | |
| CN217686635U (en) | Automatic degassing refining device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |