CN115876853A - Light addressing potential sensor for detecting low-density lipoprotein based on nanocomposite and aptamer - Google Patents

Light addressing potential sensor for detecting low-density lipoprotein based on nanocomposite and aptamer Download PDF

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CN115876853A
CN115876853A CN202211578539.6A CN202211578539A CN115876853A CN 115876853 A CN115876853 A CN 115876853A CN 202211578539 A CN202211578539 A CN 202211578539A CN 115876853 A CN115876853 A CN 115876853A
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hemin
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rgo
laps
ldl
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CN115876853B (en
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周治德
严凯腾
张政宇
李胜男
梁晋涛
禹婷婷
李桂银
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Guilin University of Electronic Technology
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Abstract

一种基于纳米复合材料结合适配体用于检测低密度脂蛋白的光寻址电位传感器,以LDL适配体为识别探针,基于还原性氧化石墨烯‑聚苯胺‑氯化血红素(RGO‑PANI‑Hemin)的纳米复合材料良好的电子传递效应和优异的负载能力,LDL适配体能够特异性识别和结合LDL蛋白,构建一种能对LDL蛋白进行特异性识别以及定量分析的新型适配体传感器,用以检测血清中LDL的含量。该方法操作简单、省时、费用低,最低检测限为0.8989μg/mL。

Figure 202211578539

A light-addressable potential sensor based on nanocomposite materials combined with suitable ligands for detecting low-density lipoproteins, using LDL aptamers as recognition probes, based on reduced graphene oxide-polyaniline-hemin (RGO ‑PANI‑Hemin) nanocomposite material has good electron transfer effect and excellent loading capacity, LDL aptamer can specifically recognize and bind LDL protein, and construct a new type of aptamer that can specifically recognize and quantitatively analyze LDL protein The ligand sensor is used to detect the content of LDL in serum. The method is simple, time-saving and low-cost, and the minimum detection limit is 0.8989 μg/mL.

Figure 202211578539

Description

一种基于纳米复合材料结合适配体用于检测低密度脂蛋白的 光寻址电位传感器A photo-addressable potentiometric sensor based on nanocomposite combined with aptamer for detecting low-density lipoprotein

技术领域Technical Field

本发明属于生物检测领域,具体涉及一种基于纳米复合材料结合适配体检测低密度脂蛋白的光寻址电位传感器。The invention belongs to the field of biological detection, and in particular relates to a light-addressable potential sensor for detecting low-density lipoprotein based on a nanocomposite material combined with an aptamer.

背景技术Background Art

血清中低密度脂蛋白(low density lipoprotein,LDL)检测方法主要有超速离心法、Friedewald公式计算法、化学沉淀法等。公开号CN111647641B的发明专利,涉及一种利用试剂盒,根据吸光度值的变化定量测定低密度脂蛋白(LDL)的含量,该方法历时较长且成本较高。公开号CN101482570的发明专利,涉及一种以肝素-镁试剂为底物,与血清离心后反应沉淀后对比测定吸光度得到血清中具体LDL含量,该方法所需试剂繁多且昂贵不易获得。这些方法操作复杂、费时且技术要求高,迫切需要一种快速、灵敏、操作简便的LDL检测方法。The main methods for detecting low-density lipoprotein (LDL) in serum include ultracentrifugation, Friedewald formula calculation method, chemical precipitation method, etc. The invention patent with publication number CN111647641B relates to a method of quantitatively determining the content of low-density lipoprotein (LDL) by using a kit according to the change in absorbance value. This method takes a long time and is costly. The invention patent with publication number CN101482570 relates to a method of using heparin-magnesium reagent as a substrate, reacting with serum after centrifugation and precipitation, and then comparing the absorbance to obtain the specific LDL content in serum. This method requires many reagents, which are expensive and difficult to obtain. These methods are complicated, time-consuming and technically demanding. There is an urgent need for a rapid, sensitive and easy-to-operate LDL detection method.

发明内容Summary of the invention

本发明所要解决的技术问题是提供一种基于还原性氧化石墨烯-聚苯胺-氯化血红素RGO-PANI-Hemin的纳米复合材料,结合特异性识别分子LDL适配体LDLapt对光寻址电位传感器芯片表面进行改性,构建出一种提高LDL的检测效率及便携式检测的生物传感器。The technical problem to be solved by the present invention is to provide a nanocomposite material based on reduced graphene oxide-polyaniline-hemin RGO-PANI-Hemin, and to modify the surface of a light-addressable potential sensor chip by combining a specific recognition molecule LDL aptamer LDL apt to construct a biosensor for improving the detection efficiency of LDL and portable detection.

本发明的检测原理为:采用物理作用将RGO-PANI-Hemin修饰在硅基LAPS芯片表面。其中,RGO具有大的比表面积和强的导电性,血红素可提高RGO的稳定性,PANI进一步提高电导率。RGO-PANI-Hemin纳米复合材料可增强LAPS传感器的检测信号,从而提高传感器灵敏度。通过非共价结合作用以及分子间作用力将LDLapt负载在RGO-PANI-Hemin材料表面,适配体因其较为不稳定的空间结构而以单链形式与复合材料连接,进而能够被修饰到LAPS芯片上。在生物传感界面上加入LDL后,LDLapt会特异性结合LDL蛋白,形成蛋白-适配体复合物而呈稳定的空间结构,有序排列在修饰的LAPS芯片表面,这将引起LAPS芯片表面电位的变化。不同浓度的LDL引起的表面电位变化不同,导致I-V曲线发生一定的偏移,通过监测I-V曲线的偏移量,实现对不同浓度的LDL的检测。与现有的方法相比,操作相对较简单,灵敏度高,实现了便携式检测,能达到0.8989μg/mL的检测限。The detection principle of the present invention is: RGO-PANI-Hemin is modified on the surface of silicon-based LAPS chip by physical action. Among them, RGO has a large specific surface area and strong conductivity, heme can improve the stability of RGO, and PANI further improves the conductivity. RGO-PANI-Hemin nanocomposite material can enhance the detection signal of LAPS sensor, thereby improving the sensitivity of sensor. LDL apt is loaded on the surface of RGO-PANI-Hemin material through non-covalent binding and intermolecular force, and the aptamer is connected to the composite material in a single chain form due to its relatively unstable spatial structure, and then can be modified to LAPS chip. After adding LDL to the biosensor interface, LDL apt will specifically bind to LDL protein, form a protein-aptamer complex and present a stable spatial structure, which is orderly arranged on the surface of the modified LAPS chip, which will cause the change of the surface potential of LAPS chip. The surface potential changes caused by different concentrations of LDL are different, resulting in a certain offset of the IV curve. By monitoring the offset of the IV curve, the detection of LDL of different concentrations is realized. Compared with existing methods, the operation is relatively simple, the sensitivity is high, and portable detection is realized, which can achieve a detection limit of 0.8989 μg/mL.

本发明按照以下步骤进行:The present invention is carried out according to the following steps:

步骤1:RGO-PANI-Hemin和Au NPs复合材料的制备Step 1: Preparation of RGO-PANI-Hemin and Au NPs composites

(1)还原性氧化石墨烯(RGO)的制备(1) Preparation of reduced graphene oxide (RGO)

称取单层氧化石墨烯(GO),加入超纯水,用超声波破碎仪进行破碎,分散均匀;随后加入抗坏血酸(AA)并在恒温磁力搅拌器上搅拌,得到RGO溶液。Weigh a single layer of graphene oxide (GO), add ultrapure water, and crush it with an ultrasonic crusher to disperse it evenly; then add ascorbic acid (AA) and stir it on a constant temperature magnetic stirrer to obtain an RGO solution.

(2)还原性氧化石墨烯-血红素(RGO-Hemin)的制备(2) Preparation of reduced graphene oxide-hemin (RGO-Hemin)

配制氯化血红素溶液,取等比例的氯化血红素溶液和RGO溶液进行混合,加入水合肼(N2H4·H2O),并放置在恒温水浴锅水浴加热搅拌一段时间,随后离心,去掉上清液,得到RGO-Hemin。Prepare the hemin solution, take equal proportions of the hemin solution and RGO solution to mix, add hydrazine hydrate (N 2 H 4 ·H 2 O), place in a constant temperature water bath for heating and stirring for a period of time, then centrifuge, remove the supernatant, and obtain RGO-Hemin.

(3)还原氧化石墨烯-聚苯胺-血红素(RGO-PANI-Hemin)的制备(3) Preparation of reduced graphene oxide-polyaniline-hemin (RGO-PANI-Hemin)

向RGO-Hemin加入聚苯胺(PANI)溶液,混合均匀,随后加入1-乙基-(3-二甲基氨基丙基)碳酰二亚胺/N-羟基琥珀酰亚胺(EDC/NHS)溶液,搅拌,离心洗涤并重溶于超纯水,冷冻干燥后得到RGO-PANI-Hemin纳米复合材料。Polyaniline (PANI) solution was added to RGO-Hemin and mixed evenly, followed by addition of 1-ethyl-(3-dimethylaminopropyl)carbodiimide/N-hydroxysuccinimide (EDC/NHS) solution, stirring, centrifugal washing and redissolving in ultrapure water, and freeze-drying to obtain RGO-PANI-Hemin nanocomposite.

(4)纳米金(Au NPs)溶液的制备(4) Preparation of gold nanoparticles (Au NPs) solution

氯金酸溶液放入烧杯中,加热搅拌至沸腾。然后,将柠檬酸钠(C6H5Na3O7)溶液缓慢加入到氯金酸溶液中。继续搅拌直到溶液从微黄变为酒红,自然降温到室温后,即可制得AuNPs溶液。The chloroauric acid solution is placed in a beaker, heated and stirred until boiling. Then, the sodium citrate (C 6 H 5 Na 3 O 7 ) solution is slowly added to the chloroauric acid solution. The stirring is continued until the solution changes from light yellow to wine red, and the AuNPs solution is obtained after the solution is naturally cooled to room temperature.

步骤2:LAPS传感器敏感单元的修饰Step 2: Modification of the LAPS sensor sensitive unit

(1)LAPS芯片的预处理(1) LAPS chip preprocessing

取一片清洗干净的硅基LAPS芯片,在其表面滴加氢氧化钠(NaOH)溶液进行活化,随后滴加巯丙基三乙氧基硅烷(MPTES)溶液,静置,对硅片进行硅烷化处理,自然干燥后得到硅烷化的LAPS芯片。A cleaned silicon-based LAPS chip was taken, and sodium hydroxide (NaOH) solution was added to the surface for activation, followed by addition of mercaptopropyltriethoxysilane (MPTES) solution. The silicon chip was allowed to stand for silanization, and the silanized LAPS chip was obtained after natural drying.

(2)RGO-PANI-Hemin/Au NPs纳米材料对LAPS芯片的修饰(2) Modification of LAPS chip by RGO-PANI-Hemin/Au NPs nanomaterials

向硅烷化处理过后的硅基LAPS芯片上滴加AuNPs溶液,表面干燥后,继续滴加RGO-PANI-Hemin纳米复合材料,静置干燥,得到RGO-PANI-Hemin/Au NPs传感器敏感膜。The AuNPs solution was dripped onto the silicon-based LAPS chip after silanization treatment. After the surface was dried, the RGO-PANI-Hemin nanocomposite material was continued to be dripped and allowed to stand and dry to obtain the RGO-PANI-Hemin/Au NPs sensor sensitive membrane.

(3)LDLapt/RGO-PANI-Hemin/Au NPs/LAPS敏感单元的构建(3) Construction of LDL apt /RGO-PANI-Hemin/Au NPs/LAPS sensitive unit

把LDLapt溶液滴在上述的LAPS硅片上,放进培养箱孵育,得到具有LDLapt/RGO-PANI-Hemin/Au NPs/LAPS的LAPS敏感单元界面。The LDL apt solution was dropped onto the above-mentioned LAPS silicon wafer and placed in an incubator for incubation to obtain a LAPS sensitive unit interface having LDL apt /RGO-PANI-Hemin/Au NPs/LAPS.

步骤3:LDL的工作曲线绘制Step 3: Draw the working curve of LDL

(1)将标准LDL溶液滴加到步骤2得到的LAPS芯片敏感单元界面,孵育,制成LAPS工作电极。(1) Add the standard LDL solution dropwise to the interface of the LAPS chip sensitive unit obtained in step 2, incubate, and prepare the LAPS working electrode.

(2)将制好的LAPS工作电极放入LAPS检测系统中,在检测池内加入磷酸盐缓冲溶液(PBS)支持液和参比电极,采用LAPS系统进行检测,记录其I-V曲线。将I-V曲线进行归一化处理,并以空白样品作对照,计算电压偏移量。(2) Place the prepared LAPS working electrode into the LAPS detection system, add phosphate buffer solution (PBS) support solution and reference electrode into the detection cell, use the LAPS system to detect, and record its I-V curve. Normalize the I-V curve, use a blank sample as a control, and calculate the voltage offset.

(3)分别对不同浓度的LDL进行检测,以LDL的浓度作为横坐标,电压偏移量作为纵坐标,绘制工作曲线,计算出该方法的最低检测限。(3) Different concentrations of LDL were tested respectively, and a working curve was drawn with the concentration of LDL as the horizontal axis and the voltage offset as the vertical axis to calculate the minimum detection limit of the method.

步骤4:实际样品中LDL的检测Step 4: Detection of LDL in actual samples

在步骤2得到的LAPS敏感单元界面,滴加待测实际样品,孵育,得到工作电极。LAPS工作电极放入LAPS检测系统中,在检测池内加入PBS缓冲溶液和参比电极,采用LAPS系统进行检测,记录其I-V曲线。将I-V曲线进行归一化处理,并以空白样品作对照,求出电压偏移量。At the interface of the LAPS sensitive unit obtained in step 2, the actual sample to be tested is added and incubated to obtain a working electrode. The LAPS working electrode is placed in the LAPS detection system, PBS buffer solution and reference electrode are added to the detection cell, and the LAPS system is used for detection to record its I-V curve. The I-V curve is normalized and compared with a blank sample to obtain the voltage offset.

利用步骤3所得到的工作曲线,根据电压偏移值得到待测实际样品中LDL的浓度。Using the working curve obtained in step 3, the concentration of LDL in the actual sample to be tested is obtained according to the voltage offset value.

进一步,所述步骤1中GO为30mg,AA为300mg。Furthermore, in step 1, GO is 30 mg and AA is 300 mg.

进一步,所述步骤1中氯化血红素溶液为1.0mg/mL。Furthermore, in step 1, the hemin solution is 1.0 mg/mL.

进一步,所述步骤1中水合肼溶液质量分数为80%。Furthermore, the mass fraction of the hydrazine hydrate solution in step 1 is 80%.

进一步,所述步骤1中PANI浓度为1.0mg/mL。Furthermore, in step 1, the concentration of PANI is 1.0 mg/mL.

进一步,所述步骤1中EDC/NHS溶液体积比为4:1,浓度各为10M。Furthermore, in step 1, the volume ratio of EDC/NHS solution is 4:1, and the concentration of each is 10M.

进一步,所述步骤1中氯金酸浓度为0.01%,柠檬酸钠浓度为1%。Furthermore, in step 1, the concentration of chloroauric acid is 0.01%, and the concentration of sodium citrate is 1%.

进一步,所述步骤2中NaOH的浓度为1.0mol/L。Furthermore, the concentration of NaOH in step 2 is 1.0 mol/L.

优选步骤2中Au NPs的用量为25μL。Preferably, the amount of Au NPs used in step 2 is 25 μL.

优选步骤2中rGO-PANI-Hemin的用量为25μL。Preferably, the amount of rGO-PANI-Hemin used in step 2 is 25 μL.

优选步骤2中LDLapt浓度为1.0μmol/L。Preferably, the LDLapt concentration in step 2 is 1.0 μmol/L.

优选步骤2和步骤3中PBS的浓度为0.2mol/L,pH值为7.4。Preferably, the concentration of PBS in step 2 and step 3 is 0.2 mol/L and the pH value is 7.4.

优选步骤2和步骤3中孵育温度为25℃,孵育时间为1h。Preferably, the incubation temperature in step 2 and step 3 is 25° C. and the incubation time is 1 h.

其中,步骤1为步骤2提供一种高导电率的纳米复合材料RGO-PANI-Hemin以引起传感界面快速响应。步骤2构成特异性识别LDL的生物传感界面,并有利于电子的转移效率。步骤2中生物传感界面的构建是步骤3和步骤4中LAPS传感器检测LDL中必不可少的关键步骤。步骤3的LDL的工作曲线为步骤4的实际样本中LDL浓度的测定提供计算依据。可见步骤1-4相互支撑,共同作用,才能利用以RGO-PANI-Hemin复合材料和LDL适配体为识别探针实现LDL的检测。Among them, step 1 provides a high-conductivity nanocomposite material RGO-PANI-Hemin for step 2 to cause a rapid response of the sensing interface. Step 2 constitutes a biosensing interface that specifically recognizes LDL and is beneficial to the transfer efficiency of electrons. The construction of the biosensing interface in step 2 is an essential key step in the detection of LDL by the LAPS sensor in steps 3 and 4. The working curve of LDL in step 3 provides a calculation basis for the determination of the LDL concentration in the actual sample in step 4. It can be seen that steps 1-4 support each other and work together to achieve the detection of LDL using the RGO-PANI-Hemin composite material and the LDL aptamer as the recognition probe.

本发明与现有技术相比具有如下优点:Compared with the prior art, the present invention has the following advantages:

1、本方法利用聚苯胺粒子增强电子传递作用的性质,以及还原氧化石墨烯的有效放大电流信号作用和优异负载能力,成功制备了生物相容性良好,导电能力强的RGO-PANI-Hemin复合材料。并将RGO-PANI-Hemin复合材料在硅基LAPS芯片上形成生物敏感膜,搭配LDLapt探针形成了新的特异性检测LDL的光寻址电位传感器。1. This method uses the properties of polyaniline particles to enhance electron transfer, as well as the effective current signal amplification and excellent load capacity of reduced graphene oxide, to successfully prepare RGO-PANI-Hemin composite materials with good biocompatibility and strong conductivity. The RGO-PANI-Hemin composite material is formed into a biosensitive membrane on a silicon-based LAPS chip, and combined with an LDL apt probe to form a new light-addressable potential sensor for specific detection of LDL.

2、国内外目前检测LDL的方法都存在操作复杂或者需要专业人员操作等问题,而基于RGO-PANI-Hemin纳米复合材料修饰的光寻址电位传感器操作简便,精度高,实现了便携式检测。最低检测限为0.9898μg/mL,用直接测量法对实际已知LDL水平的血清样本进行LDL检测,相对误差在0.32%-6.79%之间。2. The current methods for detecting LDL at home and abroad have problems such as complex operation or need for professional operation, while the light-addressable potential sensor modified by RGO-PANI-Hemin nanocomposite is easy to operate, high in precision, and realizes portable detection. The minimum detection limit is 0.9898μg/mL. The direct measurement method is used to detect LDL in serum samples with actual known LDL levels, and the relative error is between 0.32% and 6.79%.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1基于RGO-PANI-Hemin的光寻址电位传感器检测LDL的原理图;FIG1 is a schematic diagram of the principle of detecting LDL based on the light-addressable potentiometric sensor of RGO-PANI-Hemin;

图2RGO-Hemin(A)和RGO-PANI-Hemin(B)的透射电镜图;Figure 2 Transmission electron microscopy images of RGO-Hemin (A) and RGO-PANI-Hemin (B);

图3构建LAPS芯片的各个阶段的扫描电镜(SEM)图;其中:(A)裸LAPS芯片,(B)MPTES-LAPS芯片,(C)AuNPs/LAPS芯片,(D)RGO-PANI-Hemin/Au NPs/LAPS芯片,(E)LDLapt/RGO-PANI-Hemin/Au NPs/LAPS芯片,(F)LDL/LDLapt/RGO-PANI-Hemin/Au NPs/LAPS芯片。Figure 3 Scanning electron microscope (SEM) images of various stages of constructing the LAPS chip; including: (A) bare LAPS chip, (B) MPTES-LAPS chip, (C) AuNPs/LAPS chip, (D) RGO-PANI-Hemin/Au NPs/LAPS chip, (E) LDL apt /RGO-PANI-Hemin/Au NPs/LAPS chip, (F) LDL/LDL apt /RGO-PANI-Hemin/Au NPs/LAPS chip.

图4基于RGO-PANI-Hemin的光寻址电位传感器检测不同LDL浓度的工作曲线。Figure 4 Working curve of the light-addressable potentiometric sensor based on RGO-PANI-Hemin for detecting different LDL concentrations.

具体实施方式DETAILED DESCRIPTION

下面结合附图和具体实施方式对本发明进行详细说明。The present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

一种基于RGO-PANI-Hemin纳米复合材料构建检测LDL的电位传感器,检测原理见图1。首先将NaOH滴加于硅基LAPS芯片表面进行活化,而后加入巯丙基三乙氧基硅烷(MPTES),形成巯基硅烷化的LAPS芯片。将Au NPs通过Au-S作用固定在巯基硅烷化的LAPS芯片表面。在将RGO-PANI-Hemin加入到AuNPs修饰的LAPS芯片表面。孵育LDL适配体,使LDL适配体能与电极表面的RGO-PANI-Hemin发生共价结合,并因其较为不稳定的空间结构而以单链形式与复合材料连接,进而能够被固定在修饰的LAPS芯片表面上。加入LDL后,LDL适配体会特异性结合LDL蛋白,形成蛋白-适配体复合物而呈稳定的空间结构,从而有序排列在电极表面。通过LAPS系统检测传感器电化学信号的变化,可以有效地对LDL蛋白实现定量分析。A potentiometric sensor for detecting LDL based on RGO-PANI-Hemin nanocomposite material is constructed. The detection principle is shown in Figure 1. First, NaOH is added dropwise to the surface of the silicon-based LAPS chip for activation, and then mercaptopropyltriethoxysilane (MPTES) is added to form a mercaptosilane LAPS chip. Au NPs are fixed on the surface of the mercaptosilane LAPS chip through the action of Au-S. RGO-PANI-Hemin is added to the surface of the AuNPs-modified LAPS chip. The LDL aptamer is incubated so that the LDL aptamer can covalently bind to the RGO-PANI-Hemin on the electrode surface, and because of its relatively unstable spatial structure, it is connected to the composite material in a single chain form, and can then be fixed on the surface of the modified LAPS chip. After adding LDL, the LDL aptamer will specifically bind to the LDL protein, forming a protein-aptamer complex with a stable spatial structure, and thus orderly arranged on the electrode surface. By detecting the changes in the electrochemical signal of the sensor through the LAPS system, the quantitative analysis of the LDL protein can be effectively achieved.

实施步骤如下:The implementation steps are as follows:

1:RGO-PANI-Hemin/Au NPs复合材料的制备1: Preparation of RGO-PANI-Hemin/Au NPs composites

(1)取30mg GO加入到30mL纯水中,用超声波破碎仪破碎1h,使其分散均匀,然后加入300mg抗坏血酸并在恒温磁力搅拌器下搅拌12h,得到1.0mg/mL的RGO溶液。取20mg氯化血红素放入烧杯,加入10μL氨水、20mL纯水,搅拌使其溶解均匀,放冰箱里静置过夜后得到1.0mg/mL的氯化血红素溶液。取10mL氯化血红素溶液和5.0mLRGO溶液进行混合,加入10μL水合肼,在60℃水浴中反应4h。将反应液在转速为10000r/min离心5分钟,去掉上清液,得到RGO-Hemin液。取10mLRGO-Hemin溶液倒入烧杯,加入10mL 1.0mg/mL的PANI溶液,混合均匀。即后加入EDC/NHS缓冲液(体积比例4:1,浓度都为1M),并在恒温磁力搅拌器下搅拌反应3h。然后离心3次(9000r/min,10min),去掉上清液,将下层液冷冻干燥,得到RGO-PANI-Hemin复合材料。(1) Take 30 mg of GO and add it to 30 mL of pure water. Use an ultrasonic crusher to crush it for 1 hour to make it evenly dispersed. Then add 300 mg of ascorbic acid and stir it under a constant temperature magnetic stirrer for 12 hours to obtain a 1.0 mg/mL RGO solution. Take 20 mg of hemin and put it into a beaker. Add 10 μL of ammonia water and 20 mL of pure water, stir it to dissolve it evenly, and put it in a refrigerator to stand overnight to obtain a 1.0 mg/mL hemin solution. Take 10 mL of hemin solution and 5.0 mL of RGO solution, mix them, add 10 μL of hydrazine hydrate, and react in a 60°C water bath for 4 hours. Centrifuge the reaction solution at a speed of 10000 r/min for 5 minutes, remove the supernatant, and obtain RGO-Hemin solution. Take 10 mL of RGO-Hemin solution and pour it into a beaker. Add 10 mL of 1.0 mg/mL PANI solution and mix evenly. Then, EDC/NHS buffer (volume ratio 4:1, concentration 1M) was added and stirred for 3 h under a constant temperature magnetic stirrer. Then, the mixture was centrifuged 3 times (9000 r/min, 10 min), the supernatant was removed, and the lower layer was freeze-dried to obtain the RGO-PANI-Hemin composite material.

采用JEM-1200EX型透射电子显微镜对RGO-PANI-Hemin纳米材料进行表征,如图2所示。图2A为RGO-Hemin的TEM图,表面比较光滑,呈现皱褶状。图2B为RGO-PANI-Hemin的TEM图,皱褶状表面有许多颗粒,表明PANI与RGO-Hemin成功结合在一起。The RGO-PANI-Hemin nanomaterials were characterized using a JEM-1200EX transmission electron microscope, as shown in Figure 2. Figure 2A is a TEM image of RGO-Hemin, which has a relatively smooth surface and a wrinkled shape. Figure 2B is a TEM image of RGO-PANI-Hemin, which has many particles on the wrinkled surface, indicating that PANI and RGO-Hemin are successfully combined.

(2)取50ml的0.01%的氯金酸溶液于干净的烧杯中,水浴持续加热搅拌至温度为100℃。然后缓慢加入1.5mL的0.1%的柠檬酸钠溶液至氯金酸溶液中。在100℃条件下持续搅拌,直至溶液由淡黄色变为酒红色。自然冷却至室温,得到Au NPs溶液,在4℃条件下冷藏备用。(2) Take 50 ml of 0.01% chloroauric acid solution in a clean beaker and heat and stir in a water bath until the temperature reaches 100°C. Then slowly add 1.5 mL of 0.1% sodium citrate solution to the chloroauric acid solution. Continue stirring at 100°C until the solution changes from light yellow to wine red. Cool naturally to room temperature to obtain the Au NPs solution, which is refrigerated at 4°C for later use.

2:LAPS传感器敏感单元的修饰2: Modification of the sensitive unit of the LAPS sensor

(1)首先将硅片放置在溶液(H2O2和浓H2SO4体积比3:7)中浸泡10min,然后将硅片依次置于乙醇、丙酮和纯水中,于超声清洗机中超声清洗5min,最后静置30min后用纯水清洗干净。(1) First, soak the silicon wafer in a solution ( H2O2 and concentrated H2SO4 , volume ratio 3:7) for 10 minutes, then place the silicon wafer in ethanol, acetone and pure water in turn, ultrasonically clean it in an ultrasonic cleaner for 5 minutes, and finally let it stand for 30 minutes before cleaning it with pure water.

(2)在芯片工作面滴加5μLNaOH溶液(1.0mol/L),30min后清洗干净,其次使得LAPS芯片表面被MPTES巯基硅烷化,表面以-SH基团终止,得到巯基硅烷化LAPS芯片(MPTES-LAPS芯片),在4℃冰箱里放置12小时,用纯水清洗三次。(2) Add 5 μL of NaOH solution (1.0 mol/L) to the working surface of the chip and clean it after 30 minutes. Then, the surface of the LAPS chip is silanized with MPTES mercapto groups and terminated with -SH groups to obtain a mercaptosilanized LAPS chip (MPTES-LAPS chip). Place it in a refrigerator at 4°C for 12 hours and wash it three times with pure water.

(3)将MPTES-LAPS芯片滴加20μLAuNPs溶液,表面完全干燥后,继续滴加20μL1.0mg/mLRGO-PANI-Hemin溶液,在恒温孵育箱中(25℃)中孵育1h之后清洗干净,得到RGO-PANI-Hemin/AuNPs/LAPS芯片。(3) Add 20 μL of AuNPs solution to the MPTES-LAPS chip. After the surface is completely dry, continue to add 20 μL of 1.0 mg/mL RGO-PANI-Hemin solution. Incubate in a constant temperature incubator (25°C) for 1 hour and then clean it to obtain the RGO-PANI-Hemin/AuNPs/LAPS chip.

(4)在上述芯片上滴加5.0μL 1.0μM LDLapt溶液,置于震荡培养箱(25℃)中孵育1h,使其自然晾干,得到LDLapt/RGO-PANI-Hemin/AuNPs/LAPS敏感单元界面。(4) 5.0 μL of 1.0 μM LDL apt solution was added to the above chip, and the chip was placed in a shaking incubator (25°C) for incubation for 1 h and allowed to dry naturally to obtain an LDL apt /RGO-PANI-Hemin/AuNPs/LAPS sensitive unit interface.

图3为LAPS芯片各个阶段的扫描电镜(SEM)图。其中,图A为裸芯片SEM图,可以看出表面光滑平整。图B是MPTES-LAPS芯片的SEM图,表面明显覆盖了一层颗粒状的物质。图C是AuNPs/LAPS芯片的SEM图,可以看到明显的发光颗粒物,表明AuNPs粒子通过Au-S键成功修饰在芯片上。图D为RGO-PANI-Hemin/AuNPs/LAPS芯片的SEM图,在颗粒状的AuNPs粒子间隙可以明显看到一些膜状物,这表明RGO-PANI-Hemin纳米复合材料已经固定在LAPS芯片上。图E为LDLapt/RGO-PANI-Hemin/AuNPs/LAPS芯片的SEM图,相比较于图D,芯片表面的修饰物质变得厚了很多,这是由于LDLapt为一种无序的单链DNA。Figure 3 shows the scanning electron microscope (SEM) images of the LAPS chip at various stages. Figure A is a bare chip SEM image, and it can be seen that the surface is smooth and flat. Figure B is a SEM image of the MPTES-LAPS chip, and the surface is obviously covered with a layer of granular substances. Figure C is a SEM image of the AuNPs/LAPS chip, and obvious luminous particles can be seen, indicating that the AuNPs particles are successfully modified on the chip through the Au-S bond. Figure D is a SEM image of the RGO-PANI-Hemin/AuNPs/LAPS chip, and some membrane-like substances can be clearly seen in the gaps between the granular AuNPs particles, indicating that the RGO-PANI-Hemin nanocomposite material has been fixed on the LAPS chip. Figure E is a SEM image of the LDL apt /RGO-PANI-Hemin/AuNPs/LAPS chip. Compared with Figure D, the modified substance on the chip surface has become much thicker, which is because LDL apt is a disordered single-stranded DNA.

3:LDL的工作曲线绘制3: Drawing of the working curve of LDL

(1)在步骤2构建的LAPS芯片敏感单元界面滴加2.0μL LDL溶液,25℃温度下孵育30min,得到LDL/LDLapt/RGO-PANI-Hemin/AuNPs/LAPS芯片(LAPS工作电极)。(1) Add 2.0 μL of LDL solution to the interface of the sensitive unit of the LAPS chip constructed in step 2 and incubate at 25°C for 30 min to obtain an LDL/LDL apt /RGO-PANI-Hemin/AuNPs/LAPS chip (LAPS working electrode).

图3F为LDL/LDLapt/RGO-PANI-Hemin/AuNPs/LAPS芯片的SEM图。对比图3E,有一层新的片状物质在芯片表面覆盖着,这是由于LDLapt与GPC3发生特异性结合覆盖于芯片表面,形成了LAPS工作电极。Figure 3F is a SEM image of the LDL/LDL apt /RGO-PANI-Hemin/AuNPs/LAPS chip. Compared with Figure 3E, there is a new layer of flaky material covering the surface of the chip. This is because LDL apt specifically binds to GPC3 and covers the surface of the chip, forming a LAPS working electrode.

(2)将制好的LAPS工作电极放入LAPS检测系统中,在检测池内加入磷酸盐缓冲溶液(PBS,pH 7.4)缓冲溶液和参比电极,采用LAPS系统进行检测,记录其I-V曲线。不同LDL浓度的I-V曲线图见图4,随着LDL浓度的增加,I-V曲线向右偏移幅度越大。将I-V曲线进行归一化处理,并以空白样品作对照,计算电压偏移量。LDL浓度在1.0~100.0μg/mL范围内时,传感器的电压偏移量(Y)与LDL浓度(X)之间的关系呈线性,Y=4.17911X+128.67823(其中Y表示该浓度下的电压偏移值与LDL空白组电压偏移值的差值,X表示LDL的浓度),相关系数R2=0.97826。根据计算公式LOD=3Sb/b(Sb代表实验中空白对照组所得标准偏差,b代表标准曲线的斜率),计算出最低检测限度为0.8989μg/mL。(2) The prepared LAPS working electrode was placed in the LAPS detection system, and a phosphate buffer solution (PBS, pH 7.4) buffer solution and a reference electrode were added to the detection cell. The LAPS system was used for detection and the IV curve was recorded. The IV curves of different LDL concentrations are shown in FIG4 . As the LDL concentration increases, the IV curve shifts to the right more. The IV curve was normalized and the blank sample was used as a control to calculate the voltage offset. When the LDL concentration was in the range of 1.0 to 100.0 μg/mL, the relationship between the voltage offset (Y) of the sensor and the LDL concentration (X) was linear, Y=4.17911X+128.67823 (where Y represents the difference between the voltage offset value at this concentration and the voltage offset value of the LDL blank group, and X represents the LDL concentration), and the correlation coefficient R 2 =0.97826. According to the calculation formula LOD = 3S b /b (S b represents the standard deviation of the blank control group in the experiment, and b represents the slope of the standard curve), the minimum detection limit was calculated to be 0.8989 μg/mL.

4:实际样品中LDL的检测4: Detection of LDL in actual samples

(1)对2种不同浓度(19.72μg/mL、80.43μg/mL)的LDL血清样品采用直接法进行测量。此次血清样本的采集和处理均已符合广西代谢性疾病研究重点实验室伦理委员的要求。在步骤2得到的LDLapt/RGO-PANI-Hemin/AuNPs/LAPS敏感单元界面,滴加2.0μL含有LDL的血清样品,25℃温度下孵育30min,得到LAPS工作电极。(1) Two different concentrations (19.72 μg/mL and 80.43 μg/mL) of LDL serum samples were measured by direct method. The collection and processing of serum samples met the requirements of the ethics committee of Guangxi Key Laboratory of Metabolic Disease Research. 2.0 μL of serum sample containing LDL was added to the LDL apt /RGO-PANI-Hemin/AuNPs/LAPS sensitive unit interface obtained in step 2, and incubated at 25°C for 30 minutes to obtain the LAPS working electrode.

(2)将制好的LAPS工作电极放入LAPS检测系统中,在检测池内加入磷酸盐缓冲溶液(PBS,pH 7.4)缓冲溶液和参比电极,采用LAPS系统进行检测,记录其I-V曲线。将I-V曲线进行归一化处理,并以空白样品作对照,计算电压偏移量。(2) Place the prepared LAPS working electrode into the LAPS detection system, add phosphate buffer solution (PBS, pH 7.4) buffer solution and reference electrode into the detection cell, use the LAPS system to detect, and record its I-V curve. Normalize the I-V curve, use a blank sample as a control, and calculate the voltage offset.

(3)根据步骤3所得到的工作曲线,根据电压偏移值得到待测实际血清中LDL的浓度,结果见表1所示。采用直接测量法用LAPS传感器对血清样本检测的相对误差在0.32%-6.79%之间,相对标准偏差值为0.54%和1.14%。这些结果表明,所开发的LDL传感器在医学诊断中有望具有良好的应用前景。(3) According to the working curve obtained in step 3, the concentration of LDL in the actual serum to be tested is obtained according to the voltage offset value, and the results are shown in Table 1. The relative error of the serum sample detected by the LAPS sensor using the direct measurement method is between 0.32% and 6.79%, and the relative standard deviation values are 0.54% and 1.14%. These results show that the developed LDL sensor is expected to have good application prospects in medical diagnosis.

表1实际血清样本中LDL的检测结果Table 1 Detection results of LDL in actual serum samples

Figure BDA0003989945480000081
Figure BDA0003989945480000081

Claims (7)

1.一种基于纳米复合材料结合适配体用于检测低密度脂蛋白的光寻址电位传感器,按以下步骤进行:1. A light-addressable potentiometric sensor for detecting low-density lipoprotein based on a nanocomposite material combined with an aptamer, comprising the following steps: 步骤1:还原氧化石墨烯-聚苯胺-血红素RGO-PANI-Hemin和纳米金AuNPs复合材料的制备Step 1: Preparation of reduced graphene oxide-polyaniline-hemin RGO-PANI-Hemin and gold nanoparticles AuNPs composites (1)还原性氧化石墨烯RGO的制备(1) Preparation of reduced graphene oxide RGO 称取单层氧化石墨烯GO,加入超纯水,用超声波破碎仪进行破碎,分散均匀;加入抗坏血酸AA,并在恒温磁力搅拌器上搅拌,得到RGO溶液;Weigh a single layer of graphene oxide GO, add ultrapure water, and crush it with an ultrasonic crusher to disperse it evenly; add ascorbic acid AA, and stir it on a constant temperature magnetic stirrer to obtain an RGO solution; (2)还原性氧化石墨烯-血红素RGO-Hemin的制备(2) Preparation of reduced graphene oxide-hemin RGO-Hemin 配制氯化血红素溶液,取质量等比例的氯化血红素溶液和RGO溶液进行混合,加入水合肼N2H4·H2O,并放置在恒温水浴锅水浴加热,搅拌;离心,去掉上清液,得到RGO-Hemin;Prepare the hemin solution, take the hemin solution and RGO solution in equal proportion by mass, mix them, add hydrazine hydrate N 2 H 4 ·H 2 O, place them in a constant temperature water bath for heating, stir; centrifuge, remove the supernatant, and obtain RGO-Hemin; (3)还原氧化石墨烯-聚苯胺-血红素RGO-PANI-Hemin的制备(3) Preparation of reduced graphene oxide-polyaniline-hemin RGO-PANI-Hemin 向RGO-Hemin溶液中加入聚苯胺PANI溶液,混合均匀,随后加入1-乙基-(3-二甲基氨基丙基)碳酰二亚胺/N-羟基琥珀酰亚胺EDC/NHS溶液,搅拌;离心,洗涤,并重溶于超纯水,冷冻干燥后得到RGO-PANI-Hemin复合材料;Adding the polyaniline PANI solution to the RGO-Hemin solution, mixing evenly, then adding the 1-ethyl-(3-dimethylaminopropyl) carbodiimide/N-hydroxysuccinimide EDC/NHS solution, stirring; centrifuging, washing, and redissolving in ultrapure water, and freeze-drying to obtain the RGO-PANI-Hemin composite material; (4)纳米金AuNPs溶液的制备(4) Preparation of AuNPs solution 将氯金酸溶液加热、搅拌至沸腾;将柠檬酸钠溶液加入到氯金酸溶液中,继续搅拌,直到溶液从微黄变为酒红;冷却,得AuNPs溶液;Heat the chloroauric acid solution and stir until it boils; add the sodium citrate solution to the chloroauric acid solution and continue stirring until the solution changes from light yellow to wine red; cool to obtain an AuNPs solution; 步骤2:LAPS传感器敏感单元的修饰Step 2: Modification of the LAPS sensor sensitive unit (1)LAPS芯片的预处理(1) LAPS chip preprocessing 取一片清洗干净的硅基LAPS芯片,在其表面滴加氢氧化钠NaOH溶液进行活化,随后滴加巯丙基三乙氧基硅烷MPTES溶液,静置;对硅片进行硅烷化处理,自然干燥后得到硅烷化的LAPS芯片;Take a cleaned silicon-based LAPS chip, add sodium hydroxide NaOH solution on its surface for activation, then add mercaptopropyl triethoxysilane MPTES solution, and let it stand; perform silanization on the silicon chip, and obtain a silanized LAPS chip after natural drying; (2)RGO-PANI-Hemin/AuNPs纳米材料对LAPS芯片的修饰(2) Modification of LAPS chip by RGO-PANI-Hemin/AuNPs nanomaterials 向硅烷化处理过后的硅基LAPS芯片上滴加AuNPs溶液,表面干燥后,滴加RGO-PANI-Hemin纳米复合材料,静置、干燥,得到RGO-PANI-Hemin/AuNPs传感器敏感膜;The AuNPs solution was dripped onto the silicon-based LAPS chip after silanization treatment. After the surface was dried, the RGO-PANI-Hemin nanocomposite material was dripped, and the surface was allowed to stand and dried to obtain the RGO-PANI-Hemin/AuNPs sensor sensitive film. (3)LDLapt/RGO-PANI-Hemin/AuNPs/LAPS敏感单元的构建(3) Construction of LDL apt /RGO-PANI-Hemin/AuNPs/LAPS sensitive unit 将LDLapt溶液滴在RGO-PANI-Hemin/AuNPs传感器敏感膜上,孵育,得到具有LDLapt/RGO-PANI-Hemin/AuNPs/LAPS的LAPS敏感单元界面;The LDL apt solution was dropped onto the sensitive membrane of the RGO-PANI-Hemin/AuNPs sensor and incubated to obtain a LAPS sensitive unit interface having LDL apt /RGO-PANI-Hemin/AuNPs/LAPS; 步骤3:LDL的工作曲线绘制Step 3: Draw the working curve of LDL (1)将标准LDL溶液滴加到步骤2得到的LAPS芯片敏感单元界面,孵育,制成LAPS工作电极;(1) adding a standard LDL solution dropwise to the interface of the LAPS chip sensitive unit obtained in step 2, incubating, and preparing a LAPS working electrode; (2)将制好的LAPS工作电极放入LAPS检测系统中,在检测池内加入磷酸盐缓冲溶液PBS缓冲溶液和参比电极,采用LAPS系统进行检测,记录其I-V曲线;将I-V曲线进行归一化处理,并以空白样品作对照,计算电压偏移量;(2) placing the prepared LAPS working electrode into the LAPS detection system, adding phosphate buffer solution (PBS) and a reference electrode into the detection cell, using the LAPS system for detection, and recording its I-V curve; normalizing the I-V curve, using a blank sample as a control, and calculating the voltage offset; (3)分别对不同浓度的LDL进行检测,以LDL的浓度作为横坐标,电压偏移量作为纵坐标,绘制工作曲线,计算出该方法的最低检测限;(3) Detecting LDL of different concentrations respectively, plotting the working curve with the concentration of LDL as the abscissa and the voltage offset as the ordinate, and calculating the minimum detection limit of the method; 步骤4:实际样品中LDL的检测Step 4: Detection of LDL in actual samples 在步骤2得到的LAPS敏感单元界面,滴加待测实际样品,孵育,得到工作电极;LAPS工作电极放入LAPS检测系统中,在检测池内加入PBS缓冲溶液和参比电极,采用LAPS系统进行检测,记录其I-V曲线;将I-V曲线进行归一化处理,并以空白样品作对照,求出电压偏移量;Add the actual sample to be tested to the interface of the LAPS sensitive unit obtained in step 2, incubate, and obtain a working electrode; put the LAPS working electrode into the LAPS detection system, add PBS buffer solution and reference electrode into the detection cell, use the LAPS system to detect, and record its I-V curve; normalize the I-V curve, and use a blank sample as a control to calculate the voltage offset; 利用步骤3所得到的工作曲线,根据电压偏移值得到待测实际样品中LDL的浓度。Using the working curve obtained in step 3, the concentration of LDL in the actual sample to be tested is obtained according to the voltage offset value. 2.根据权利要求1所述的传感器,其特征在于:步骤1中所述Hemin溶液为1.0mg/mL;所述RGO溶液为1.0mg/mL;所述水合肼溶液质量分数为80%;所述PANI浓度为1.0mg/mL;所述EDC/NHS溶液体积比为4:1,浓度都为10mol/L。2. The sensor according to claim 1 is characterized in that: the Hemin solution in step 1 is 1.0 mg/mL; the RGO solution is 1.0 mg/mL; the mass fraction of the hydrazine hydrate solution is 80%; the PANI concentration is 1.0 mg/mL; the volume ratio of the EDC/NHS solution is 4:1, and the concentrations are all 10 mol/L. 3.根据权利要求1所述的传感器,其特征在于:所述步骤2中NaOH的浓度为1.0mol/L;MPTES浓度为1%;AuNPs的用量为20μL。3. The sensor according to claim 1, characterized in that: in step 2, the concentration of NaOH is 1.0 mol/L; the concentration of MPTES is 1%; and the amount of AuNPs used is 20 μL. 4.根据权利要求1所述的传感器,其特征在于:步骤2中RGO-PANI-Hemin的用量为20μL,浓度为1.0mg/mL。4. The sensor according to claim 1, characterized in that: in step 2, the amount of RGO-PANI-Hemin used is 20 μL and the concentration is 1.0 mg/mL. 5.根据权利要求1所述的传感器,其特征在于:步骤2中所述LDLapt浓度为1μM,用量为5.0μL。5 . The sensor according to claim 1 , wherein the LDL apt concentration in step 2 is 1 μM and the dosage is 5.0 μL. 6.根据权利要求1所述的传感器,其特征在于:步骤3和步骤4中所述PBS缓冲溶液的pH值为7.4,浓度为0.2mol/L。6. The sensor according to claim 1, characterized in that the pH value of the PBS buffer solution in step 3 and step 4 is 7.4 and the concentration is 0.2 mol/L. 7.根据权利要求1所述的传感器,其特征在于:步骤3和步骤4中所述孵育温度为25℃,孵育时间为1h。7 . The sensor according to claim 1 , wherein the incubation temperature in step 3 and step 4 is 25° C. and the incubation time is 1 hour.
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