CN115872743A - MAX phase material with X site being pnicogen element and/or chalcogen element and preparation method thereof - Google Patents
MAX phase material with X site being pnicogen element and/or chalcogen element and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of inorganic nonmetallic materials, and relates to an MAX phase material with the X position being pnicogen and/or chalcogen and a preparation method thereof. The molecular formula of the MAX phase material with X site being pnicogen and/or chalcogen is M 2 AX, wherein X is one or the combination of more of elements of P, as, sb, S, se and Te. The novel MAX phase material with the X site being pnicogen and/or chalcogen has unique physicochemical properties and has potential application prospects in the fields of energy storage, catalysis, electrons, thermoelectricity and the like.
Description
Technical Field
The invention belongs to the technical field of inorganic nonmetallic materials, and relates to an MAX phase material with the X position being pnicogen and/or chalcogen and a preparation method thereof.
Background
MAX phases are a large class of non-van der Waals layered solid materials, and these ternary compounds have a general chemical formula M n+1 AX n In a hexagonal symmetrical structure (P6) 3 /mmc) where M is a transition metal, a is predominantly a main group element, X is C, N, B, n =1-3 (m.w. barsum et al, prog.solid State Ch 28 (1-4) (2000) 201-281). Theoretical calculations predict that there are over 600 MAX phases with thermodynamic stability, of which over 70 have been successfully synthesized. The constituent elements of the MAX phase that have been found to date include more than 20M-bit elements, nearly 20 a-bit elements, and 3X-bit elements (C, N, B). Wherein M is n+1 X n The nanostructure sublayer is composed of a covalent bond of a common edge M 6 X octahedron layer, X element occupies the octahedron interval of M element; and A is a monoatomic layer and M n+1 X n The interaction force between the nanostructure sub-layers is weak and is in a state similar to a metal bond. By virtue of its unique covalent M 6 The X octahedron and the metalloid A layer form an alternate arrangement structure, and the MAX phase shows the composite characteristic of metal and ceramic: these MAX phases generally combine the lightweight, high strength, oxidation resistance, creep resistance and good thermal stability of ceramics with the high electrical conductivity, high thermal conductivity, relative flexibility of metals and good damage tolerance, high temperature plasticity and processability (J. Gonzalez-Julian et al, J AM chem. Soc.104 (2) (2021) 659-690). Recent studies have also found that the MAX phase has low irradiation activity and good material joining properties (c.wang et al, nat. Commun.,2019,10,622)&X.Zhou et al, carbon,2016,102, 106-115). Therefore, most of the current research on the corresponding application fields of MAX mainly focuses on the direction of high-safety structural materials including high-temperature electrodes, high-speed pantograph, nuclear fuel cladding tube, etc., while relatively little research on the application fields of MAX phase functionalization.
The chemical and structural diversity of the MAX phase is crucial for optimizing the performance of future applications (m.sokol et al, trends in chem.1 (2) (2019) 210-223), how to design and regulate the MAX phase element composition and the electronic cloud structure by using the chemical diversity of the MAX phase to obtain the MAX phase with brand new physicochemical properties and improve the understanding of people on the crystal structure of the MAX phase material is always an important direction for scholars in the field to strive. Experiments have shown that the elements at various positions in the MAX phase play a decisive role in the properties of the material. However, the X-bit elements of the MAX phase explored so far are all smaller atom size elements (C, N, B) with the outermost charge numbers being smaller (< 5). Therefore, it is necessary to extend the optional range of X-site atoms in order to manipulate the structure and properties of the MAX phase material.
On the other hand, transition metal sulfide materials (TMDs) and transition metal phosphide materials (TMPs) have received much attention in recent years, and become one of the hot spots in recent researches in materials science. The transition metal sulfide is a compound MX with a sandwich-like structure 2 (M represents a transition metal in the periodic table, and X represents a chalcogen element such as S, se), and similarly to graphene, TMDs are connected between layers by van der Waals force, and single-layer or multi-layer TMDs can be peeled off from a bulk material. TMDs exhibit different conductor characteristics depending on the metal elements of their composition, such as near insulator (HfS) 2 ) (Wang, et al.2d mater, 4.3 2017, 031012), semiconductor (MoS 2 ) (Yang T H, et al adv. Funct. Mater.,2018,28 (7): 1706113), metals (NbSe 3242) 2 ) (Cai Z, et al. Chem. Reviews,2018,118 (13): 6091-6133). In addition, the bandgap of TMDS semiconductor materials also depends on the number of layers of the material, such as MoS 2 The band gap of (1.2 eV) can be raised from 1.8 to 1.9eV (single layer) (Martella C, et al. Adv. Mater.,2018,30 (9): 1705615). Most TMDs materials possess three characteristic structures: 1t,2h and 3R (Guo B, et al.&Inter, 2017,9 (4): 3653-3660). These three phases are not fixed and are interconvertible under certain conditions. Molybdenum disulphide, for example, is generally present in the form of a semiconducting phase (2H), but when ion migration occurs it can convert to a metastable metallic phase (1T). Whereas transition metal phosphides differ from transition metal sulfides, TMPs have physical properties similar to ceramics while retaining electronic and magnetic properties similar to metals. And their crystal structure is triangular pyramid instead of forming a layered structure like sulfide (Oyama)S T, et al, catal, today,2009,143 (1-2): 94-107). They exhibit excellent properties in catalytic desulfurization and catalytic denitration, for example, phosphide Ni having extremely high catalytic activity 2 P (Oyama S T, et al. Journal. Of catally., 2003,216 (1-2): 343-352), this excellent catalytic property has a great correlation with the internal structure of the phosphorus atom arrangement and the way of electron bonding, but most of the transition metal phosphides do not have an ordered layered structure (Du H, et al. Nanoscale,2018,10 (46): 21617-21624). The occupation of the MAX-phase pnictogen of the pnictogen-containing synthesized by using a powder metallurgy method is basically in an A position, and a structure formed by the pnictogen and the metal element is a triangular prism. At present, no research report on MAX phase materials with X site being phosphorus and chalcogen is available.
Disclosure of Invention
The invention aims to provide a MAX phase material with X site being pnicogen and/or chalcogen and a preparation method thereof aiming at the defects in the prior art.
In order to achieve the purpose, the invention is realized by the following scheme:
a MAX phase material with X site as pnicogen element and/or chalcogen element has molecular formula M 2 AX, wherein X is one or the combination of more of elements of P, as, sb, S, se and Te.
Preferably, M is 2 In the AX molecular formula, M is selected from one or more of Ti, zr, hf, V, nb and Ta.
Preferably, M is 2 In the AX molecular formula, A is any one of S, se or the combination of the two in any proportion.
The elements at each position in the MAX phase are decisive for the performance of the material, and the X-bit elements of the MAX phase studied so far are all elements with smaller atomic size (C, N, B). The X site of the MAX phase material provided by the invention is pnicogen and/or chalcogen, the electron cloud density of X site atoms is greatly changed compared with the existing MAX phase material, and the structure and the performance of the MAX phase material are changed in a certain adjustable way.
When pnictogen occupies X position of MAX phase materialThen, M is formed with the metal element 6 X octahedron, thus obtaining the metal compound with a new structure with ordered layered arrangement of pnicogen elements.
When the A-and X-positions of the MAX phase are occupied by chalcogen atoms, a similar metal sulfide compound is formed, but unlike TMDS materials, the structural layers within such MAX phases are not connected by Van der Waals forces, but by M-A type metal bonds and M-X type covalent bonds, respectively, and such MAX phases also include the phase structure of two sulfides: the sulfide structure of the M-A layer is characterized as 2H type, while the sulfide structure of the M-X layer is characterized as 1T type. The special structure can enable MAX with the A site and the X site being chalcogen elements to have the properties of sulfides with different characteristics when the MAX is the same, and is expected to prepare ceramic materials with different conductive characteristics.
The novel MAX phase material with the X site being pnicogen and/or chalcogen has potential application prospects in the fields of energy storage, thermoelectricity and the like.
In order to achieve another purpose of the invention, the invention is realized by the following scheme:
a method for preparing a MAX phase material with X site being pnicogen and/or chalcogen, comprising the steps of: mixing boride MAX phase material, pnictogen simple substance and/or chalcogen simple substance and/or pnictogen-containing compound and/or chalcogen-containing compound, and reacting at 800-1700 ℃ in inert atmosphere to obtain MAX phase material with X position being pnictogen and/or chalcogen.
In the process of MAX phase synthesis, it is extremely difficult to independently introduce pnicogen and/or chalcogen to X position, in the invention, a template replacement method is adopted to make boride MAX phase material as a template to carry out X-position atom exchange with pnicogen simple substance and/or chalcogen simple substance and/or pnicogen-containing compound and/or chalcogen-containing compound, thereby synthesizing MAX phase with X position being pnicogen and/or chalcogen, and the formed MAX phase has larger change of electronic structure compared with the existing MAX phase material due to the introduction of phosphorus and chalcogen at X position, thereby causing the change of physical and chemical properties of MAX phase material.
Preferably, in the boride MAX phase material, M is selected from one or a combination of more of Ti, zr, hf, V, nb and Ta.
Preferably, in the boride MAX phase material, A is any one of S, se or a combination of the two in any proportion.
Preferably, in the boride MAX phase material, X is B.
Preferably, the pnictogen-containing compound is one or more selected from the group consisting of pnictogen-containing metal compounds and pnictogen-containing nonmetal compounds.
Preferably, the chalcogen-containing compound is selected from one or more of a chalcogen-containing metal compound and a chalcogen-containing nonmetal compound.
Preferably, the molar ratio of pnicogen and/or chalcogen to boride MAX phase material is > 1.
Preferably, the reaction time is 30 to 120min and the pressure is 0 to 100MPa.
Compared with the prior art, the invention has the following beneficial effects:
(1) The invention provides a novel MAX phase material with X site being pnicogen and/or chalcogen, the electronic structure of the material is greatly changed compared with the existing MAX phase material due to the introduction of the pnicogen and the chalcogen in the X site, thereby causing the physical and chemical properties of the MAX phase material to be changed and being capable of regulating and controlling the physical and chemical properties;
(2) The novel MAX phase material with the X site being pnicogen and/or chalcogen has unique physicochemical properties and has potential application prospects in the fields of energy storage, catalysis, electrons, thermoelectricity and the like;
(3) The invention realizes the preparation of MAX phase material with the X position being pnicogen element and/or chalcogen element for the first time, and has simple preparation process, easy operation, low consumption and universality;
(4) The MAX phase material with the X position of the pnicogen element and/or the chalcogen element is synthesized by reacting a boride MAX phase material with the pnicogen element simple substance and/or the chalcogen element simple substance and/or the compound containing the pnicogen element and/or the compound containing the chalcogen element, is an innovation in material synthesis means, and provides a brand-new synthesis strategy for the synthesis of other novel MAX phases;
(5) The method for synthesizing the MAX phase material with the X site being the pnicogen and/or the chalcogen by utilizing the MAX template replacement method has very important significance for supplementing the MAX phase traditional definition, expanding the composition types and regulating and controlling the chemical properties of the material.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments described in the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIGS. 1a, 1b, and 1c are XRD patterns and Reitveld method full spectrum analysis results of MAX phase materials with pnictogen and/or chalcogen at X site, respectively, prepared in examples 1-3 of the present invention;
FIGS. 2a, 2b, 2c are SEM images of MAX phase materials with X sites of pnictogen and/or chalcogen, respectively, prepared in examples 1-3 of the present invention;
FIGS. 3a, 3b, and 3c are atomic images and lattice diffraction patterns, respectively, of MAX phase materials prepared in examples 1-3 of the present invention and having X sites of pnictogen and/or chalcogen.
Detailed Description
The technical solutions of the present invention are further described below by way of specific embodiments and drawings, it should be understood that the specific embodiments described herein are only for the purpose of facilitating understanding of the present invention, and are not intended to be specific limitations of the present invention. The raw materials used in the examples of the present invention are those commonly used in the art, and the methods used in the examples are those conventional in the art, unless otherwise specified.
Example 1
In this embodiment, the MAX phase material with X as pnictogen and/or chalcogen is Hf 2 SeS bulk material.
The Hf is 2 Manufacture of SeS bulk materialThe preparation method comprises the following steps:
(1) Weighing Hf 2 SeB powder 10g, hfS 2 5g of powder, and grinding and mixing the materials to obtain a mixture;
(2) And pressing the mixture into a sheet by using a graphite mold, and then putting the sheet into a spark plasma sintering system for reaction. The reaction conditions are as follows: the reaction temperature is 1600 ℃, the heat preservation time is 20min, the pressure is 50Mpa, and the protection is carried out in the argon atmosphere. And taking out the reaction product in the graphite mold after the temperature of the sintering system is reduced to room temperature.
(3) Removing graphite paper on the surface of the obtained block, polishing the block to a mirror surface by using abrasive paper with different meshes, putting the mirror surface into a 50 ℃ oven, and taking out the block for 12 hours to obtain a block material.
And (4) detecting the block treated in the step (3) by utilizing X-ray diffraction spectrum (XRD). (R) can be obtained by the Reitveld method full spectrum analysis wp = 8.357) which successfully synthesized Hf 2 SeS type MAX phase material (see FIG. 1 a), with a lattice constant of
The small amount of hafnium oxide and hafnium boride impurities present in the powder may originate from the oxidation of the hafnium element during the preparation process and from the by-products of the substitution reaction.
When the fracture cross section of the bulk processed in step (3) is observed by using a Scanning Electron Microscope (SEM), the synthesized bulk grains are found to have a granular structure (see fig. 2 a). As shown in table 1, further verification of the above speculation is possible by TEM-based spectroscopy, where the bulk consists of Hf, se, S elements, with the atomic percent ratio of the elements being about 2:1:1, according with the experimental design and XRD analysis. Using a high resolution transmission electron microscope with spherical aberration correction, it can be clearly seen that the material is roughly composed of two alternately stacked nanostructures (see FIG. 3 a), i.e., hf 2 An S layer and an Se atomic layer.
Table 1: the result of energy spectrum analysis of the obtained block
Example 2
In this embodiment, the MAX phase material with X site being pnicogen and/or chalcogen is Zr 2 SeP a block material.
Zr in the reaction solution 2 The preparation method of the SeP block material comprises the following steps:
(1) Weighing Zr 2 SeB powder (6 g) and p powder (1 g), and the above materials were mixed by milling to obtain a mixture.
(2) And pressing the mixture into tablets by using a graphite die, and then putting the tablets into a high-temperature tubular furnace for reaction. The reaction conditions are as follows: the reaction temperature is 1600 ℃, the heat preservation time is 120min, and the argon atmosphere is used for protection. And taking out the reaction product in the graphite mold after the temperature of the sintering system is reduced to room temperature.
(3) And (3) crushing the obtained block, putting the crushed block into a 50 ℃ oven, and taking out the crushed block for 12 hours to obtain a block material.
And (4) detecting the powder treated in the step (3) by utilizing X-ray diffraction spectrum (XRD). (R) can be obtained by the Reitveld method full spectrum analysis wp = 14.335) that successfully synthesized Zr 2 SeP type MAX phase material (fig. 1 b) with lattice constants a =0.3755nm and c =1.2559nm. The small amount of hafnium oxide impurities present in the powder may result from oxidation of hafnium during the manufacturing process.
When the fracture section of the bulk treated in step (3) is observed by using a Scanning Electron Microscope (SEM), the synthesized bulk crystal grains are found to have a granular structure (see fig. 2 b). As shown in table 2, the above-mentioned conjecture can be further verified by energy spectrum analysis, and the bulk is composed of Zr, se, and P elements, wherein the atomic percent ratio of the elements is about 2. Using a high resolution transmission electron microscope with spherical aberration correction, it can be clearly seen that the material is roughly composed of two alternately stacked nanostructures (see FIG. 3 b), namely Zr 2 P layer and Se atomic layer. And the Zr: se: P ≈ 2.
Table 2: the result of energy spectrum analysis of the obtained block
Example 3
In this embodiment, the MAX phase material with X site being pnicogen and/or chalcogen is Zr 2 SeSe bulk material.
Zr in the reaction solution 2 The preparation method of the SeSe bulk material comprises the following steps:
(1) Weighing Zr 2 SeB powder, 8g, zrSe 2 5g of powder, and the above materials were mixed by grinding to obtain a mixture.
(2) And pressing the mixture into a sheet by using a graphite mold, and putting the sheet into a spark plasma sintering system for reaction. The reaction conditions are as follows: the reaction temperature is 1600 ℃, the heat preservation time is 20min, the pressure is 50Mpa, and the protection is carried out in the argon atmosphere. And taking out the reaction product in the graphite mold after the temperature of the sintering system is reduced to room temperature.
(3) Removing graphite paper on the surface of the obtained block, polishing the block to a mirror surface by using abrasive paper with different meshes, putting the mirror surface into a 50 ℃ oven, and taking out the block for 12 hours to obtain a block material.
And (4) detecting the block treated in the step (3) by utilizing X-ray diffraction spectrum (XRD). (R) can be obtained by the Reitveld method full spectrum analysis wp = 11.01), which successfully synthesized Zr 2 A se type MAX phase material (see fig. 1 c) with a lattice constant a =0.3745nm and c =1.2058nm. The small amount of zirconium oxide and zirconium boride impurities in the powder may be derived from the oxidation of zirconium element in the preparation process, and the latter is derived from byproducts in the substitution reaction.
When the fracture cross section of the bulk processed in step (3) is observed by using a Scanning Electron Microscope (SEM), the synthesized bulk grains are found to have a granular structure (see fig. 2 c). As shown in table 3, the spectroscopy analysis can further verify the above presumption that the bulk consists of Zr, se elements, wherein the atomic percent ratio of the elements is about 1:1, according with the experimental design and XRD analysis. Using a high resolution transmission electron microscope with spherical aberration correction, it can be clearly seen that the material is roughly composed of two alternately stacked nanostructures (see FIG. 3 c), namely Zr 2 A Se layer and a Se atomic layer. And Se =1:1 as Zr can be well matched with the energy spectrum analysis result.
Table 3: the result of energy spectrum analysis of the obtained block
Example 4
In this embodiment, the MAX phase material with X site being pnicogen and/or chalcogen is Ti 2 A SeAs powder material.
The Ti 2 The preparation method of the SeAs powder material comprises the following steps:
(1) Weighing Ti 2 SeB powder 7g, tiAs 2 2.5g of powder, and the above materials were mixed by grinding to obtain a mixture.
(2) And pressing the mixture into tablets by using a die, and putting the tablets into a high-temperature tubular furnace for reaction. The reaction conditions are as follows: the reaction temperature is 1600 ℃, the heat preservation time is 120min, and the argon atmosphere is used for protection. And taking out the reaction product in the mold after the temperature of the sintering system is reduced to room temperature.
(3) And crushing the obtained block to obtain a corresponding powder product.
Example 5
In this embodiment, the MAX phase material with X as pnictogen and/or chalcogen is Hf 2 (Se 0.5 S 0.5 )(S 0.5 Sb 0.5 ) And (3) powder materials.
The Hf 2 (Se 0.5 S 0.5 )(S 0.5 Sb 0.5 ) The preparation method of the powder material comprises the following steps:
(1) Weighing Hf 2 (Se 0.5 S 0.5 ) The above materials were ground and mixed to obtain a mixture, in which the B powder was used in an amount of 8g, the S powder was used in an amount of 1g, and the Sb powder was used in an amount of 4 g.
(2) And pressing the mixture into tablets by using a die, and putting the tablets into a high-temperature tubular furnace for reaction. The reaction conditions are as follows: the reaction temperature is 1500 ℃, the heat preservation time is 120min, and the argon atmosphere is used for protection. And taking out the reaction product in the mold after the temperature of the sintering system is reduced to room temperature.
(3) And crushing the obtained block to obtain a corresponding powder product.
Example 6
In this embodiment, the MAX phase material with X site being pnicogen and/or chalcogen is (Ti) 1/3 Hf 1/3 Zr 1/3 ) 2 SeS powder material.
The (Ti) 1/3 Hf 1/3 Zr 1/3 ) 2 The preparation method of the SeS powder material comprises the following steps:
(1) Weighing (Ti) 1/3 Hf 1/3 Zr 1/3 ) 2 SeB powder, 8g, taS 3 4g of powder, and the above materials were mixed by grinding to obtain a mixture.
(2) And pressing the mixture into tablets by using a die, and putting the tablets into a tubular furnace for reaction. The reaction conditions are as follows: the reaction temperature is 1600 ℃, the heat preservation time is 120min, and the argon atmosphere is used for protection. And taking out the reaction product in the mold after the temperature of the sintering system is reduced to room temperature.
(3) And crushing the obtained block to obtain a corresponding powder product.
Example 7
In this embodiment, the MAX phase material with X as pnictogen and/or chalcogen is (Hf) 0.5 Zr 0.5 ) 2 Se(P 0.5 S 0.5 ) And (3) powder materials.
The (Hf) 0.5 Zr 0.5 ) 2 Se(P 0.5 S 0.5 ) The preparation method of the powder material comprises the following steps:
(1) Weighing (Hf) 0.5 Zr 0.5 ) 2 SeB powder (8 g), S powder (0.6 g) and P powder (0.6 g) were mixed by grinding to obtain a mixture.
(2) And pressing the mixture into tablets by using a die, and putting the tablets into a high-temperature tubular furnace for reaction. The reaction conditions are as follows: the reaction temperature is 1500 ℃, the heat preservation time is 150min, and the argon atmosphere is used for protection. And taking out the reaction product in the mold after the temperature of the sintering system is reduced to room temperature.
(3) And crushing the obtained block to obtain a corresponding powder product.
In addition, the inventors of the present invention also conducted experiments by substituting the other raw materials and process conditions mentioned in the present specification for the corresponding raw materials and process conditions in the foregoing examples 1 to 7, and all the results showed that MAX phase materials with pnicogen and/or chalcogen in the X position could be obtained.
In summary, compared with the existing MAX phase material, the MAX phase material with pnictogen and/or chalcogen as X site provided in the foregoing embodiment of the present invention has the characteristic of changing the electronic structure of the material by adjusting and controlling X site elements, thereby further changing the physical and chemical properties of the material, and the preparation process is simple and easy to operate, and has potential application prospects in the fields of energy storage, catalysis, electronics, thermoelectricity, and the like.
The aspects, embodiments, features of the present invention should be considered in all respects as illustrative and not restrictive, the scope of the invention being defined solely by the claims. Other embodiments, modifications, and uses will be apparent to those skilled in the art without departing from the spirit and scope of the claimed invention.
The use of headings and sections in this disclosure is not meant to limit the disclosure; each section can apply to any aspect, embodiment, and feature of the invention.
In the preparation method of the present invention, the order of the steps is not limited to the listed order, and for those skilled in the art, the order of the steps is not changed without creative efforts, and the invention is also within the protection scope of the present invention. Further, two or more steps or actions may be performed simultaneously.
Finally, it should be noted that the specific examples described herein are merely illustrative of the invention and do not limit the embodiments of the invention. Those skilled in the art may now make numerous modifications of, supplement, or substitute for the specific embodiments described, all of which are not necessary or desirable to describe herein. While the invention has been described with respect to specific embodiments, it will be appreciated that various changes and modifications may be made without departing from the spirit and scope of the invention, as defined by the appended claims.
Claims (10)
1. A MAX phase material with X-site being pnicogen and/or chalcogen, wherein said X-site is phosphorusThe MAX phase material of the chalcogen and/or chalcogen has the molecular formula M 2 AX, wherein X is one or the combination of more of elements of P, as, sb, S, se and Te.
2. MAX-phase material with X-site being pnictogen and/or chalcogen, according to claim 1, characterized in that M is a metal element selected from the group consisting of pnictogen and chalcogen 2 In the AX molecular formula, M is selected from one or more of Ti, zr, hf, V, nb and Ta.
3. MAX-phase material with X-site being pnictogen and/or chalcogen, according to claim 1, characterized in that M is a metal element selected from the group consisting of pnictogen and chalcogen 2 In the AX molecular formula, A is any one of S, se or the combination of the two in any proportion.
4. A method for preparing a MAX phase material with X site being pnicogen and/or chalcogen, characterized in that it comprises the following steps: mixing boride MAX phase material, pnictogen simple substance and/or chalcogen simple substance and/or pnictogen-containing compound and/or chalcogen-containing compound, and reacting at 800-1700 ℃ in inert atmosphere to obtain MAX phase material with X position being pnictogen and/or chalcogen.
5. The method of claim 4 wherein the boride MAX phase material is selected from the group consisting of Ti, zr, hf, V, nb, ta, and combinations thereof.
6. The preparation method of claim 4, wherein in the boride MAX phase material, A is any one of S, se or the combination of the two in any proportion.
7. A method according to claim 4, characterised in that in the boride MAX phase material, X is B.
8. The method according to claim 4, wherein the pnictogen-containing compound is one or more selected from the group consisting of a pnictogen-containing metal compound, a pnictogen-containing nonmetal compound;
and/or the chalcogen-containing compound is selected from one or more of a chalcogen-containing metal compound and a chalcogen-containing nonmetal compound.
9. A method according to claim 4, characterised in that the molar ratio of pnictogen and/or chalcogen to boride MAX phase material is > 1.
10. The process according to claim 4, wherein the reaction time is 30 to 120min and the pressure is 0 to 100MPa.
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