CN115863942A - Double-passband independently adjustable band-pass filter with constant bandwidth - Google Patents

Double-passband independently adjustable band-pass filter with constant bandwidth Download PDF

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CN115863942A
CN115863942A CN202211602163.8A CN202211602163A CN115863942A CN 115863942 A CN115863942 A CN 115863942A CN 202211602163 A CN202211602163 A CN 202211602163A CN 115863942 A CN115863942 A CN 115863942A
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microstrip line
line
impedance
resonator
passband
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CN115863942B (en
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王荔田
郭静
钱丽荣
李翠平
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Tianjin University of Technology
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Abstract

本发明提供了一种保持恒定带宽的双通带独立可调滤波器,采用了两个不同的谐振器通过共用输入输出馈线的结构来实现。所述的谐振器包括微带线加载变容二极管,所述变容二极管与外置偏压电路连接。滤波器主要包括上层微带线结构、中间层介质基板和下层接地金属,具有结构简单,小型化,特性优良等特点。可以克服双通带可调滤波器选择性不足以及带宽变化的的缺点,实现了双通带独立可调,保持恒定带宽的效果,且易于实现电路集成和系统封装,也可以广泛应用于工业生产中。

Figure 202211602163

The invention provides an independent adjustable filter with dual passbands maintaining constant bandwidth, which is realized by using two different resonators and sharing the structure of input and output feeders. The resonator includes a microstrip line loaded varactor diode, and the varactor diode is connected with an external bias circuit. The filter mainly includes an upper layer microstrip line structure, an intermediate layer dielectric substrate and a lower layer grounding metal, and has the characteristics of simple structure, miniaturization, and excellent characteristics. It can overcome the shortcomings of insufficient selectivity and bandwidth change of the dual-passband adjustable filter, realize the independent adjustment of the dual-passband and maintain the effect of constant bandwidth, and is easy to realize circuit integration and system packaging, and can also be widely used in industrial production middle.

Figure 202211602163

Description

一种恒定带宽的双通带独立可调带通滤波器A Constant Bandwidth Dual Passband Independently Adjustable Bandpass Filter

技术领域technical field

本发明涉及微波通信技术领域,特别是涉及一种恒定带宽的双通带独立可调带通滤波器。The invention relates to the technical field of microwave communication, in particular to a double-pass band independently adjustable band-pass filter with constant bandwidth.

背景技术Background technique

随着现代无线通信技术的快速发展,移动通信,卫星通信,雷达追踪及遥感技术等越来越多的需要借助微波,毫米波技术,从而导致了电磁环境日益复杂,最终使得频谱资源愈加紧张,有限的频谱资源与应用需求之间的矛盾日益突出,传统的窄带通信系统因传输容量小,传输速率低已经无法适应这些应用场景的实际需求,因此,可调技术越来越受到人们的重视。With the rapid development of modern wireless communication technology, more and more mobile communication, satellite communication, radar tracking and remote sensing technology need to rely on microwave and millimeter wave technology, which leads to an increasingly complex electromagnetic environment and ultimately makes spectrum resources more and more tense. The contradiction between limited spectrum resources and application requirements is becoming increasingly prominent. Traditional narrowband communication systems cannot meet the actual needs of these application scenarios due to their small transmission capacity and low transmission rate. Therefore, adjustable technology has attracted more and more attention.

为了满足多用户对不同通信模式以及对高传输速率的迫切需求,现代通信系统需要将多频段技术以及可调技术结合起来,因此,可调的多通带滤波器应运而生。另一方面,随着无线通信技术的飞速发展,通常需要通过具有相同的带宽的一系列信道进行通信。尽管大量的可调双通带滤波器已经被报道出来,但是这些滤波器并不能满足恒定带宽以及独立可调的要求,并且结构复杂,增加了许多设计的不确定性。In order to meet the urgent needs of multiple users for different communication modes and high transmission rates, modern communication systems need to combine multi-band technology and adjustable technology. Therefore, adjustable multi-passband filters have emerged as the times require. On the other hand, with the rapid development of wireless communication technologies, it is usually necessary to communicate through a series of channels with the same bandwidth. Although a large number of adjustable dual-passband filters have been reported, these filters cannot meet the requirements of constant bandwidth and independent adjustment, and their complex structures increase the uncertainty of many designs.

以往设计的可调滤波器结构存在以下缺点:The tunable filter structure designed in the past has the following disadvantages:

(1)频率调节范围过程中带宽变化;(1) Bandwidth changes during frequency adjustment range;

(2)多通带可调滤波器中通带并不独立可调;(2) The passband in the multi-passband adjustable filter is not independently adjustable;

(3)调节过程中,滤波器性能变差,不稳定。(3) During the adjustment process, the performance of the filter becomes worse and unstable.

发明内容Contents of the invention

为了克服现有技术的不足,本发明的目的是提供一种恒定带宽的双通带独立可调带通滤波器,其结构紧凑,可以同时实现高选择性,独立可调,并且可以保持恒定带宽。In order to overcome the deficiencies of the prior art, the purpose of the present invention is to provide a constant bandwidth dual-band independently adjustable band-pass filter, which is compact in structure, can simultaneously achieve high selectivity, independently adjustable, and can maintain a constant bandwidth .

为实现上述目的,本发明提供了如下方案:To achieve the above object, the present invention provides the following scheme:

一种保持恒定带宽的双通带独立可调滤波器,包括:上层微带结构、中间层介质基板、下层接地金属、第一端口、第二端口、与所述第一端口连接的第一微带线、与所述第二端口连接的第二微带线;所述上层微带结构附着在所述中间层介质基板的上表面,所述下层接地金属附着在所述中间层介质基板的下表面;所述第一端口和所述第二端口分别位于所述中间层介质基板的两侧;所述第一微带线与所述第二微带线相互连接,构成共用输入输出馈线;An independently adjustable filter with dual passbands that maintains a constant bandwidth, comprising: an upper layer microstrip structure, an intermediate layer dielectric substrate, a lower layer ground metal, a first port, a second port, and a first microstrip connected to the first port A strip line, a second microstrip line connected to the second port; the upper layer microstrip structure is attached to the upper surface of the intermediate layer dielectric substrate, and the lower layer ground metal is attached to the lower layer of the intermediate layer dielectric substrate surface; the first port and the second port are respectively located on both sides of the intermediate layer dielectric substrate; the first microstrip line and the second microstrip line are connected to each other to form a common input and output feeder line;

所述上层微带结构包括第一谐振器和第二谐振器;所述第一谐振器和所述第二谐振器均关于垂直轴左右对称;所述第一谐振器位于所述共用输入输出馈线的外侧,并与所述共用输入输出馈线以缝隙耦合的方式连接;所述第一谐振器包括对称的两个阻抗线结构;所述阻抗线结构包括低阻抗线、第一高阻抗线、第二高阻抗线、第三高阻抗线、第四高阻抗线以及第一变容二极管;所述低阻抗线的一端通过大电阻与第一偏置电压相连,所述低阻抗线的另一端均与所述第一高阻抗线和所述第二高阻抗线相连,所述第二高阻抗线的另一端与所述第一变容二极管的一端相连,所述第一变容二极管的另一端均与所述第三高阻抗线和所述第四高阻抗线相连,所述第四高阻抗线的另一端与地相连接;对称的两根所述低阻抗线互相耦合,对称的两根所述第一高阻抗线互相耦合;The upper microstrip structure includes a first resonator and a second resonator; both the first resonator and the second resonator are bilaterally symmetrical about the vertical axis; the first resonator is located on the common input and output feeder and connected to the common input and output feeder in a slot coupling manner; the first resonator includes two symmetrical impedance line structures; the impedance line structure includes a low impedance line, a first high impedance line, a second Two high-impedance lines, the third high-impedance line, the fourth high-impedance line and the first varactor diode; one end of the low-impedance line is connected to the first bias voltage through a large resistor, and the other end of the low-impedance line is connected to the first bias voltage. connected to the first high-impedance line and the second high-impedance line, the other end of the second high-impedance line is connected to one end of the first varactor diode, and the other end of the first varactor diode Both are connected to the third high-impedance line and the fourth high-impedance line, and the other end of the fourth high-impedance line is connected to the ground; the two symmetrical low-impedance lines are coupled to each other, and the two symmetrical the first high impedance lines are coupled to each other;

所述第二谐振器位于所述共用输入输出馈线的内侧,并与所述共用输入输出馈线以缝隙耦合的方式连接;所述第二谐振器包括第三变容二极管、第五微带线、第六微带线、第七微带线和对称的两个微带线结构;所述微带线结构包括第二变容二极管、第三微带线和与所述第三微带线连接的第四微带线;所述第四微带线的另一端与所述第二变容二极管的一端相连,所述第二变容二极管的另一端与所述第五微带线相连,所述第五微带线的两端分别通过大电阻接地,所述第五微带线的中心再通过加载所述第三变容二极管与所述第六微带线和所述第七微带线相连;所述第六微带线通过大电阻与第二偏置电压相连。The second resonator is located inside the common input and output feeder, and is connected to the common input and output feeder in a slot-coupled manner; the second resonator includes a third varactor diode, a fifth microstrip line, The sixth microstrip line, the seventh microstrip line, and two symmetrical microstrip line structures; the microstrip line structure includes a second varactor diode, a third microstrip line, and a microstrip line connected to the third microstrip line A fourth microstrip line; the other end of the fourth microstrip line is connected to one end of the second varactor diode, and the other end of the second varactor diode is connected to the fifth microstrip line, the The two ends of the fifth microstrip line are respectively grounded through a large resistance, and the center of the fifth microstrip line is connected to the sixth microstrip line and the seventh microstrip line by loading the third varactor diode ; The sixth microstrip line is connected to the second bias voltage through a large resistor.

优选地,所述第一谐振器用于产生两个模式,以形成第一通带,并通过改变所述第一变容二极管的电容来实现第一通带频率的可调;所述第二谐振器用于产生奇偶两个模式,以形成第二通带,并通过改变所述第二变容二极管的电容来实现第二通带频率的频率可调;枝节结构的所述第六微带线和所述第七微带线加载第三变容二极管,以产生一个自身的传输零点。Preferably, the first resonator is used to generate two modes to form a first passband, and the frequency of the first passband can be adjusted by changing the capacitance of the first varactor diode; the second resonant The device is used to generate odd and even two modes to form a second passband, and realize the frequency adjustment of the second passband frequency by changing the capacitance of the second varactor diode; the sixth microstrip line and the stub structure The seventh microstrip line is loaded with the third varactor diode to generate its own transmission zero.

优选地,所述中间层介质基板为R04003C,厚度为0.508mm,介电常数为3.55,损耗角正切为0.0027。Preferably, the intermediate dielectric substrate is R04003C, with a thickness of 0.508mm, a dielectric constant of 3.55, and a loss tangent of 0.0027.

优选地,所述所述第五微带线的两端分别通过大电阻接地的接地端孔的半径为0.3mm。Preferably, the radius of the ground hole where both ends of the fifth microstrip line are respectively grounded through a large resistance is 0.3 mm.

优选地,所述第一偏置电压和/或所述第二偏置电压为0-15V。Preferably, the first bias voltage and/or the second bias voltage is 0-15V.

优选地,所述第一变容二极管的型号为硅变容二极管SMV1233;所述第二变容二极管和/或所述第三变容二极管的型号为硅变容二极管SMV1234。Preferably, the model of the first varactor is silicon varactor SMV1233; the model of the second varactor and/or the third varactor is silicon varactor SMV1234.

优选地,所述大电阻的电阻值为100K欧姆。Preferably, the resistance value of the large resistor is 100K ohms.

优选地,所述共用输入输出馈线包括源负载耦合结构,所述源负载耦合结构用于额外产生三个自适应的传输零点。Preferably, the common input and output feeder includes a source-load coupling structure, and the source-load coupling structure is used to additionally generate three adaptive transmission zeros.

根据本发明提供的具体实施例,本发明公开了以下技术效果:According to the specific embodiments provided by the invention, the invention discloses the following technical effects:

本发明提供了本发明具有如下有益效果The present invention provides the present invention has the following beneficial effects

本发明能够通过枝节加载和源负载耦合结构产生上下通带的四个传输零点,以实现高选择性;且通过两个不同谐振器通过共用输入输出馈线来实现上下两个通带的独立可调。且在具体实施例中,通过控制耦合系数K12和外部品质因数Qe来实现频率调谐过程中的带宽恒定。本发明能够使得器件结构紧凑,在保持恒定绝对带宽时实现两个通带的独立可调。The present invention can generate four transmission zeros of the upper and lower passbands through the stub loading and source-load coupling structure to achieve high selectivity; and realize the independent adjustment of the upper and lower passbands by sharing the input and output feeders through two different resonators . And in a specific embodiment, the constant bandwidth in the frequency tuning process is realized by controlling the coupling coefficient K 12 and the external quality factor Q e . The invention can make the structure of the device compact and realize the independent adjustment of two passbands while maintaining a constant absolute bandwidth.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required in the embodiments. Obviously, the accompanying drawings in the following description are only some of the present invention. Embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without paying creative labor.

图1为本发明实施例提供的可调滤波器的三维结构示意图;FIG. 1 is a schematic diagram of a three-dimensional structure of a tunable filter provided by an embodiment of the present invention;

图2为本发明实施例提供的可调滤波器的具体结构示意图;FIG. 2 is a schematic structural diagram of a tunable filter provided by an embodiment of the present invention;

图3为本发明实施例提供的可调滤波器的物理尺寸示意图;FIG. 3 is a schematic diagram of the physical size of the tunable filter provided by the embodiment of the present invention;

图4为本发明实施例提供的可调一通带的S参数仿真曲线示意图;4 is a schematic diagram of an S-parameter simulation curve of an adjustable passband provided by an embodiment of the present invention;

图5为本发明实施例提供的可调二通带的S参数仿真曲线示意图。FIG. 5 is a schematic diagram of an S-parameter simulation curve of an adjustable two-passband provided by an embodiment of the present invention.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。Reference herein to an "embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The occurrences of this phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is understood explicitly and implicitly by those skilled in the art that the embodiments described herein can be combined with other embodiments.

本申请的说明书和权利要求书及所述附图中的术语“第一”、“第二”、“第三”和“第四”等是用于区别不同对象,而不是用于描述特定顺序。此外,术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤、过程、方法等没有限定于已列出的步骤,而是可选地还包括没有列出的步骤,或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤元。The terms "first", "second", "third" and "fourth" in the specification and claims of the present application and the drawings are used to distinguish different objects, rather than to describe a specific order . Furthermore, the terms "include" and "have", as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a series of steps, processes, methods, etc. are not limited to the listed steps, but optionally also include steps that are not listed, or optionally also include the inherent characteristics of these processes, methods, products or equipment. other steps.

本发明的目的是提供一种恒定带宽的双通带独立可调带通滤波器,其结构紧凑,可以同时实现高选择性,独立可调,并且可以保持恒定带宽。The object of the present invention is to provide a constant bandwidth double passband independently adjustable bandpass filter, which has a compact structure, can realize high selectivity at the same time, is independently adjustable, and can maintain a constant bandwidth.

为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图和具体实施方式对本发明作进一步详细的说明。In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

图1为本发明实施例提供的可调滤波器的三维结构示意图,如图1所示,本实施例提供了一种保持恒定带宽的双通带独立可调滤波器,包括上层微带结构,中间层介质基板和下层接地金属。Figure 1 is a schematic diagram of a three-dimensional structure of an adjustable filter provided by an embodiment of the present invention. As shown in Figure 1, this embodiment provides a dual-passband independently adjustable filter that maintains a constant bandwidth, including an upper microstrip structure, The middle layer dielectric substrate and the lower layer ground metal.

如图2所示,上层微带结构关于垂直轴左右对称。滤波器的微带结构由两个不同的谐振器通过共用输入输出馈线来实现,所述两个不同谐振器分别为第一谐振器和第二谐振器;第一谐振器和第二谐振器均关于垂直轴左右对称;滤波器的第一端口位于介质基板的一侧,所述第二端口位于介质基板的另一侧;两条50欧姆的微带线分别与对应的两个端口相连,这两条50欧姆微带线即为第一微带线12(12_1),且两条微带线设置在同一水平线上;第一微带线12与第二微带线11(11_1)相连构成共用输入输出馈线。As shown in Fig. 2, the upper microstrip structure is left-right symmetrical about the vertical axis. The microstrip structure of the filter is realized by two different resonators through a common input and output feeder, and the two different resonators are respectively the first resonator and the second resonator; the first resonator and the second resonator are both It is symmetrical about the vertical axis; the first port of the filter is located on one side of the dielectric substrate, and the second port is located on the other side of the dielectric substrate; two 50-ohm microstrip lines are respectively connected to the corresponding two ports, which Two 50 ohm microstrip lines are the first microstrip line 12 (12_1), and the two microstrip lines are arranged on the same horizontal line; the first microstrip line 12 is connected with the second microstrip line 11 (11_1) to form a common Input and output feeders.

第一谐振器位于共用馈线的外测,与馈线以缝隙耦合的方式相连接;第一谐振器包括对称的低阻抗线1(1_1)和第一高阻抗线2(2_1),第二高阻抗线3,第三高阻抗线4,第四高阻抗线5以及第一变容二极管Cv1组成,低阻抗线1的一段通过大电阻与第一偏置电压(偏压1)相连,另一端与第一高阻抗线2与第二高阻抗线3相连,第二高阻抗线3的另一端与第一变容二极管Cv1的一端相连,第一变容二极管Cv1的另一端与第三高阻抗线4与第四高阻抗线5相连,第四高阻抗线5的另一端与地相连接;其中,低阻抗线1与低阻抗线1_1互相耦合,第一高阻抗线2与第一高阻抗线2_1互相耦合。The first resonator is located on the outside of the common feeder, and is connected to the feeder in a slot-coupled manner; the first resonator includes a symmetrical low-impedance line 1 (1_1) and a first high-impedance line 2 (2_1), and a second high-impedance line Line 3, the third high-impedance line 4, the fourth high-impedance line 5 and the first varactor diode Cv1, one section of the low-impedance line 1 is connected to the first bias voltage (bias 1) through a large resistor, and the other end is connected to the first bias voltage (bias 1). The first high-impedance line 2 is connected to the second high-impedance line 3, the other end of the second high-impedance line 3 is connected to one end of the first varactor diode Cv1 , and the other end of the first varactor diode Cv1 is connected to the third high-impedance line The impedance line 4 is connected to the fourth high-impedance line 5, and the other end of the fourth high-impedance line 5 is connected to the ground; wherein, the low-impedance line 1 and the low-impedance line 1_1 are mutually coupled, and the first high-impedance line 2 is connected to the first high-impedance line 5. The impedance lines 2_1 are coupled to each other.

第二谐振器位于共用馈线的内测,与馈线以缝隙耦合的方式相连接;第二谐振器包括对称的第三微带线6与第四微带线7相连,第四微带线7的另一端与第二变容二极管Cv2的一端相连,第二变容二极管Cv2的另一端与第五微带线8相连,第五微带线8的两端分别通过大电阻接地,第五微带线8的中心再通过加载第三变容二极管Cv3与第七微带线9与第六微带线10相连;第七微带线9通过大电阻与第二偏置电压(偏压2)相连。The second resonator is located at the inner test of the common feeder, and is connected with the feeder in a slot-coupled manner; the second resonator includes a symmetrical third microstrip line 6 connected to the fourth microstrip line 7, and the fourth microstrip line 7 The other end is connected to one end of the second varactor diode C v2 , and the other end of the second varactor diode C v2 is connected to the fifth microstrip line 8, and the two ends of the fifth microstrip line 8 are respectively grounded through a large resistance, and the fifth The center of the microstrip line 8 is connected to the seventh microstrip line 9 and the sixth microstrip line 10 by loading the third varactor diode C v3 ; the seventh microstrip line 9 is connected to the second bias voltage (bias voltage 2) connected.

第一谐振器为一对双模谐振器与馈线耦合产生两个谐振模式,形成第一通带,通过改变外置偏压1来实现一通带频率的可调。第二谐振器为枝节加载阶跃阻抗谐振器,可以产生一奇一偶两个谐振模式,形成第二通带,通过改变外置偏压2来实现二通带频率的可调,该谐振器还可以额外产生一个零点。The first resonator is a pair of dual-mode resonators coupled with the feeder to generate two resonant modes to form a first passband, and the frequency of a passband can be adjusted by changing the external bias voltage 1 . The second resonator is a step-impedance resonator loaded with stubs, which can generate two resonant modes, one odd and one even, to form a second passband. The frequency of the second passband can be adjusted by changing the external bias voltage 2. The resonator An additional zero can also be generated.

本实施例分别分析了上下两个通带的耦合系数K12与外部品质因数Qe,当通带带宽保持恒定时,随着调谐过程中频率的增大,耦合系数K12减小,而外部品质因数Qe增大。In this embodiment, the coupling coefficient K 12 and the external quality factor Q e of the upper and lower passbands are respectively analyzed. When the bandwidth of the passband remains constant, the coupling coefficient K 12 decreases with the increase of the frequency in the tuning process, while the external quality factor Q e The quality factor Q e increases.

如图1所示,本实施例采用的中间层介质板为R04003C,厚度为0.508mm,介电常数为3.55,损耗角正切为0.0027。馈线结构采用源负载耦合结构进行馈电,此结构可以引入额外的传输零点,提高通带的选择性以及通带之间的隔离度。As shown in FIG. 1 , the intermediate dielectric plate used in this embodiment is R04003C, with a thickness of 0.508 mm, a dielectric constant of 3.55, and a loss tangent of 0.0027. The feeder structure uses a source-load coupling structure for feeding, which can introduce additional transmission zeros to improve the selectivity of the passband and the isolation between the passbands.

如图3所示,谐振器结构的详细电路尺寸为:L1=1.1mm,L2=2.4mm,L3=4.15mm,L4=5.65mm,L5=2.7mm,L6=12.1mm,L7=5.8mm,L8=4.3mm,L9=7.85mm,L10=6.95mm,L11=19.95mm,w1=2.3mm,w2=0.1mm,w3=0.3mm,w4=0.7mm,w5=0.3mm,w6=0.15mm,w7=0.4mm,w8=1.1mm,g1=0.3mm,g2=0.4mm,s1=0.3mm,s2=0.2mm,s3=0.8mm。接地孔半径为0.3mm。As shown in Figure 3, the detailed circuit dimensions of the resonator structure are: L 1 =1.1mm, L 2 =2.4mm, L 3 =4.15mm, L 4 =5.65mm, L 5 =2.7mm, L 6 =12.1mm , L 7 =5.8mm, L 8 =4.3mm, L 9 =7.85mm, L 10 =6.95mm, L 11 =19.95mm, w 1 =2.3mm, w 2 =0.1mm, w 3 =0.3mm, w 4 = 0.7 mm, w 5 = 0.3 mm, w 6 = 0.15 mm, w 7 = 0.4 mm, w 8 = 1.1 mm, g 1 = 0.3 mm, g 2 = 0.4 mm, s 1 = 0.3 mm, s 2 = 0.2 mm, s 3 =0.8 mm. The ground hole radius is 0.3mm.

本实施例利用高频仿真软件sonnet对整体结构进行优化分析,得到的S参数仿真曲线如图4及图5。从图4和图5可以看出,该滤波器的第一通带中心频率可以在2.06-2.22GHz范围内变化,变化过程中绝对带宽可以保持60MHz不变;第二通带中心频率可以在3.1-3.6GHz范围内变化,变化过程中绝对带宽可以保持72MHz不变;在整个调谐范围内,插入损耗均小于1.4dB,回波损耗优于12dB;且上下通带的调谐过程互不影响,可以实现两个通带独立可调。上下通带各自两侧的两个自适应零点使得该滤波器具有很高的选择性。In this embodiment, the high-frequency simulation software sonnet is used to optimize and analyze the overall structure, and the obtained S-parameter simulation curves are shown in Fig. 4 and Fig. 5 . As can be seen from Fig. 4 and Fig. 5, the first passband center frequency of the filter can be changed in the range of 2.06-2.22GHz, and the absolute bandwidth can be kept constant at 60MHz during the change process; the second passband center frequency can be changed at 3.1 Change within the range of -3.6GHz, the absolute bandwidth can remain unchanged at 72MHz during the change process; in the entire tuning range, the insertion loss is less than 1.4dB, and the return loss is better than 12dB; and the tuning process of the upper and lower passbands does not affect each other, you can Two passbands are independently adjustable. Two adaptive zeros on either side of the upper and lower passbands make this filter highly selective.

综上,本发明的恒定带宽的双通带独立可调滤波器结合多模谐振器和阶跃阻抗谐振器,实现了一种结构紧凑,高选择性,低损耗,以及调节过程中带宽可以保持恒定的双通带独立可调滤波器,该滤波器适用于现代无线通信系统。In summary, the double-passband independent tunable filter with constant bandwidth of the present invention combines multimode resonators and step impedance resonators to achieve a compact structure, high selectivity, low loss, and bandwidth can be maintained during the adjustment process. Constant dual passband independently tunable filter suitable for modern wireless communication systems.

本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。Each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same and similar parts of each embodiment can be referred to each other.

本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的一般技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处。综上所述,本说明书内容不应理解为对本发明的限制。In this paper, specific examples have been used to illustrate the principle and implementation of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; meanwhile, for those of ordinary skill in the art, according to the present invention Thoughts, there will be changes in specific implementation methods and application ranges. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims (8)

1.一种保持恒定带宽的双通带独立可调滤波器,其特征在于,包括:上层微带结构、中间层介质基板、下层接地金属、第一端口、第二端口、与所述第一端口连接的第一微带线、与所述第二端口连接的第二微带线;所述上层微带结构附着在所述中间层介质基板的上表面,所述下层接地金属附着在所述中间层介质基板的下表面;所述第一端口和所述第二端口分别位于所述中间层介质基板的两侧;所述第一微带线与所述第二微带线相互连接,构成共用输入输出馈线;1. A double-passband independently adjustable filter that maintains a constant bandwidth is characterized in that it includes: an upper layer microstrip structure, an intermediate layer dielectric substrate, a lower layer ground metal, a first port, a second port, and the first The first microstrip line connected to the port and the second microstrip line connected to the second port; the upper layer microstrip structure is attached to the upper surface of the intermediate dielectric substrate, and the lower layer ground metal is attached to the The lower surface of the interlayer dielectric substrate; the first port and the second port are respectively located on both sides of the interlayer dielectric substrate; the first microstrip line and the second microstrip line are connected to each other to form a Shared input and output feeders; 所述上层微带结构包括第一谐振器和第二谐振器;所述第一谐振器和所述第二谐振器均关于垂直轴左右对称;所述第一谐振器位于所述共用输入输出馈线的外侧,并与所述共用输入输出馈线以缝隙耦合的方式连接;所述第一谐振器包括对称的两个阻抗线结构;所述阻抗线结构包括低阻抗线、第一高阻抗线、第二高阻抗线、第三高阻抗线、第四高阻抗线以及第一变容二极管;所述低阻抗线的一端通过大电阻与第一偏置电压相连,所述低阻抗线的另一端均与所述第一高阻抗线和所述第二高阻抗线相连,所述第二高阻抗线的另一端与所述第一变容二极管的一端相连,所述第一变容二极管的另一端均与所述第三高阻抗线和所述第四高阻抗线相连,所述第四高阻抗线的另一端与地相连接;对称的两根所述低阻抗线互相耦合,对称的两根所述第一高阻抗线互相耦合;The upper microstrip structure includes a first resonator and a second resonator; both the first resonator and the second resonator are bilaterally symmetrical about the vertical axis; the first resonator is located on the common input and output feeder and connected to the common input and output feeder in a slot coupling manner; the first resonator includes two symmetrical impedance line structures; the impedance line structure includes a low impedance line, a first high impedance line, a second Two high-impedance lines, the third high-impedance line, the fourth high-impedance line and the first varactor diode; one end of the low-impedance line is connected to the first bias voltage through a large resistor, and the other end of the low-impedance line is connected to the first bias voltage. connected to the first high-impedance line and the second high-impedance line, the other end of the second high-impedance line is connected to one end of the first varactor diode, and the other end of the first varactor diode Both are connected to the third high-impedance line and the fourth high-impedance line, and the other end of the fourth high-impedance line is connected to the ground; the two symmetrical low-impedance lines are coupled to each other, and the two symmetrical the first high impedance lines are coupled to each other; 所述第二谐振器位于所述共用输入输出馈线的内侧,并与所述共用输入输出馈线以缝隙耦合的方式连接;所述第二谐振器包括第三变容二极管、第五微带线、第六微带线、第七微带线和对称的两个微带线结构;所述微带线结构包括第二变容二极管、第三微带线和与所述第三微带线连接的第四微带线;所述第四微带线的另一端与所述第二变容二极管的一端相连,所述第二变容二极管的另一端与所述第五微带线相连,所述第五微带线的两端分别通过大电阻接地,所述第五微带线的中心再通过加载所述第三变容二极管与所述第六微带线和所述第七微带线相连;所述第六微带线通过大电阻与第二偏置电压相连。The second resonator is located inside the common input and output feeder, and is connected to the common input and output feeder in a slot-coupled manner; the second resonator includes a third varactor diode, a fifth microstrip line, The sixth microstrip line, the seventh microstrip line, and two symmetrical microstrip line structures; the microstrip line structure includes a second varactor diode, a third microstrip line, and a microstrip line connected to the third microstrip line A fourth microstrip line; the other end of the fourth microstrip line is connected to one end of the second varactor diode, and the other end of the second varactor diode is connected to the fifth microstrip line, the The two ends of the fifth microstrip line are respectively grounded through a large resistance, and the center of the fifth microstrip line is connected to the sixth microstrip line and the seventh microstrip line by loading the third varactor diode ; The sixth microstrip line is connected to the second bias voltage through a large resistor. 2.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述第一谐振器用于产生两个模式,以形成第一通带,并通过改变所述第一变容二极管的电容来实现第一通带频率的可调;所述第二谐振器用于产生奇偶两个模式,以形成第二通带,并通过改变所述第二变容二极管的电容来实现第二通带频率的频率可调;枝节结构的所述第六微带线和所述第七微带线加载第三变容二极管,以产生一个自身的传输零点。2. A kind of double-passband independent tunable filter that keeps constant bandwidth according to claim 1, is characterized in that, described first resonator is used for generating two modes, to form the first passband, and by changing The capacitance of the first varactor diode is used to realize the adjustable frequency of the first passband; the second resonator is used to generate two modes of odd and even to form the second passband, and by changing the frequency of the second varactor diode The capacitance of the capacitor is used to realize the frequency adjustment of the second passband frequency; the sixth microstrip line and the seventh microstrip line of the stub structure are loaded with a third varactor diode to generate a transmission zero point of its own. 3.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述中间层介质基板为R04003C,厚度为0.508mm,介电常数为3.55,损耗角正切为0.0027。3. A dual-band independent tunable filter with constant bandwidth according to claim 1, characterized in that the intermediate dielectric substrate is R04003C with a thickness of 0.508mm, a dielectric constant of 3.55, and a loss angle of The tangent is 0.0027. 4.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述所述第五微带线的两端分别通过大电阻接地的接地端孔的半径为0.3mm。4. A kind of independent adjustable filter with dual-pass bands maintaining constant bandwidth according to claim 1, characterized in that, the two ends of the fifth microstrip line pass through the ground hole of the large resistance ground respectively. The radius is 0.3mm. 5.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述第一偏置电压和/或所述第二偏置电压为0-15V。5 . The dual-band independently adjustable filter with constant bandwidth according to claim 1 , wherein the first bias voltage and/or the second bias voltage is 0-15V. 6.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述第一变容二极管的型号为硅变容二极管SMV1233;所述第二变容二极管和/或所述第三变容二极管的型号为硅变容二极管SMV1234。6. A kind of independent adjustable filter with dual passbands maintaining a constant bandwidth according to claim 1, characterized in that, the model of the first varactor is a silicon varactor SMV1233; the second varactor The model of the diode and/or the third varactor is a silicon varactor SMV1234. 7.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述大电阻的电阻值为100K欧姆。7. A dual-band independent adjustable filter with constant bandwidth according to claim 1, characterized in that the resistance value of the large resistor is 100K ohms. 8.根据权利要求1所述的一种保持恒定带宽的双通带独立可调滤波器,其特征在于,所述共用输入输出馈线包括源负载耦合结构,所述源负载耦合结构用于额外产生三个自适应的传输零点。8. A kind of independent adjustable filter with dual passbands maintaining constant bandwidth according to claim 1, characterized in that, said common input and output feeder includes a source-load coupling structure, and said source-load coupling structure is used to generate additional Three adaptive transmission zeros.
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