CN115863201A - Machine station resetting method and device and semiconductor device manufacturing method - Google Patents

Abstract

The application discloses a machine resetting method, a machine resetting device, a semiconductor device manufacturing method, a storage medium and an electronic device. After the machine station carries out core component replacement, thickness detection is carried out on the monitoring wafer before etching to obtain a first thickness, further, the machine station is used for etching the monitoring wafer, thickness detection is carried out on the monitoring wafer after etching to obtain a second thickness, the running state of the machine station is judged according to the first thickness and the second thickness, and the running state is used for reflecting whether the machine station normally runs after core component replacement is carried out on the machine station. Therefore, whether the over-etching amount of the machine station after the core component of the machine station is replaced is enough or not is judged by detecting the thickness difference of the monitoring wafer before and after the wafer etching. The high daily monitoring expenditure caused by machine resetting detection through the processes of SEM slicing and the like is effectively reduced, the time for resetting the machine after work is effectively shortened, the production capacity is obviously improved, the production cost is effectively reduced, and the production utilization rate of the machine is improved.

Description

Machine station resetting method and device and semiconductor device manufacturing method

Technical Field

The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a method and an apparatus for machine resetting, a method for manufacturing a semiconductor device, a storage medium, and an electronic device.

Background

In the chip manufacturing process, the core component can reach the upper limit of the service life of the machine due to the possibility of downtime of the machine or the increase of the service hours of the random machine. After the replacement of the ESC (electrostatic chuck) or UEL (upper electrode) core components of the related equipment of the semiconductor process, a long time of re-machine process is required to avoid the influence of the component replacement on the process. Therefore, when the core component of the machine is replaced, how to optimize the recovery process of the machine is very critical to reduce the time of the recovery process.

In addition, in the rework process, in addition to the conventional process, etching needs to be performed on a Depth Wafer (deep Wafer) on which 2-3 times of the same film structure is grown in advance, and Scanning Electron Microscope (SEM) slicing is performed to confirm whether the amount of OE (over-etching) etched by the machine station is sufficient after the core component is replaced, so as to prevent the problems of insufficient etching capability caused by replacement of the core component. However, this results in a time cost of 1 day or more for the overall machine-resetting process, and the monitoring cost is high.

Disclosure of Invention

In order to solve the above technical problems, embodiments of the present invention creatively provide a method and an apparatus for resetting a device, a method for manufacturing a semiconductor device, a storage medium, and an electronic apparatus.

According to a first aspect of the present application, there is provided a machine resetting method, the method including: after the machine station carries out core component replacement, carrying out thickness detection before etching on the monitoring wafer to obtain a first thickness; etching the monitoring wafer by using the machine table; performing thickness detection on the monitoring wafer after etching to obtain a second thickness; and judging the running state of the machine according to the first thickness and the second thickness, wherein the running state is used for reflecting whether the machine runs normally after the core component is replaced.

According to an embodiment of the present application, the thickness detection before etching the monitoring wafer comprises: monitoring the thickness of an oxidation layer of the monitoring wafer before etching by using a film thickness machine; correspondingly, the thickness detection after the monitoring wafer is etched comprises the following steps: and monitoring the thickness of the oxide layer of the monitoring wafer after etching by using a film thickness machine.

According to an embodiment of the present application, the determining the operation state of the machine according to the first thickness and the second thickness includes: determining the etching thickness of the machine according to the first thickness and the second thickness; and judging the running state of the machine according to the etching thickness.

According to an embodiment of the present application, the determining the operating state of the machine according to the etching thickness includes: when the etching thickness is smaller than a first threshold value and larger than a second threshold value, judging that the machine platform normally operates; and when the etching thickness is greater than the first threshold value or the etching thickness is smaller than the second threshold value, judging that the machine platform operates abnormally.

According to an embodiment of the present application, the determining the operation state of the machine according to the first thickness and the second thickness includes: determining the over-etching amount by adopting the following formula:

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wherein OE represents the over-etching amount; x1 represents the first thickness; x2 represents the second thickness; h represents the deepest thickness of the monitoring wafer in the etching process;

and when the OE is smaller than a third set threshold and larger than a fourth set threshold, judging that the machine runs normally.

According to an embodiment of the present application, the method further comprises: when the operation state shows that the machine station operates normally, the machine station is normally recovered; and sending out a prompt when the running state shows that the machine station runs abnormally.

According to a second aspect of the present application, there is also provided a semiconductor device manufacturing method, the method including: and repeating the machine used in the manufacturing process of the semiconductor device by adopting the machine repeating method.

According to a third aspect of the present application, there is also provided a machine resetting apparatus, the apparatus including: the first detection module is used for detecting the thickness of the monitoring wafer before etching after the core component of the machine is replaced, so as to obtain a first thickness; the etching module is used for etching the monitoring wafer by using the machine; the second detection module is used for detecting the thickness of the monitoring wafer after etching to obtain a second thickness; and the judging module is used for judging the running state of the machine according to the first thickness and the second thickness, and the running state is used for reflecting whether the machine runs normally after core components are replaced.

According to a fourth aspect of the present application, there is also provided a computer-readable storage medium comprising a set of computer-executable instructions, which when executed, is configured to perform the above-mentioned machine recovery method.

According to a fifth aspect of the present application, there is also provided an electronic device comprising at least one processor, and at least one memory connected to the processor, a bus; the processor and the memory complete mutual communication through the bus; the processor is used for calling the program instructions in the memory so as to execute the machine reset method.

The embodiment of the application provides a machine resetting method and device, a semiconductor device manufacturing method, a storage medium and electronic equipment. After a machine station carries out core component replacement, thickness detection is carried out on a monitoring wafer before etching to obtain a first thickness, further, the machine station is used for etching the monitoring wafer, thickness detection is carried out on the monitoring wafer after etching to obtain a second thickness, the running state of the machine station is judged according to the first thickness and the second thickness, and the running state is used for reflecting whether the machine station normally runs after core component replacement is carried out. Therefore, whether the over-etching amount of the machine station etching is enough after the core component of the machine station is replaced is judged by detecting the thickness difference of the monitoring wafer before and after the wafer etching. The high daily monitoring expenditure caused by machine resetting detection through the processes of SEM slicing and the like is effectively reduced, the time for resetting the machine after work is effectively shortened, the production capacity is obviously improved, the production cost is effectively reduced, and the production utilization rate of the machine is improved.

It is to be understood that the teachings of this application need not achieve all of the above-described benefits, but rather that specific embodiments may achieve specific technical results, and that other embodiments of this application may achieve benefits not mentioned above.

Drawings

The above and other objects, features and advantages of exemplary embodiments of the present application will become readily apparent from the following detailed description, which proceeds with reference to the accompanying drawings. Several embodiments of the present application are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:

in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

Fig. 1 shows a schematic flow chart of an implementation of a machine recovery method according to an embodiment of the present application;

fig. 2 is a schematic diagram illustrating an implementation flow of a specific application example of a machine recovery apparatus according to an embodiment of the present application;

fig. 3 is a schematic diagram illustrating an implementation principle of detecting an over-etching thickness of a wafer in a specific application example of the machine recovery method according to the embodiment of the present application;

fig. 4 shows a table for monitoring detection of OE amount of a machine in a specific application example of machine recovery in the embodiment of the present application;

fig. 5 is a schematic flow chart illustrating an implementation of a conventional machine recovery method;

fig. 6 is a schematic diagram illustrating a composition structure of a machine recovery apparatus according to an embodiment of the present application;

fig. 7 shows a schematic structural diagram of the device according to the embodiment of the present application.

Detailed Description

The principles and spirit of the present application will be described with reference to a number of exemplary embodiments. It should be understood that these embodiments are given merely to enable those skilled in the art to better understand and to implement the present application, and do not limit the scope of the present application in any way. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

The technical solutions of the present application are further described in detail below with reference to the accompanying drawings and specific embodiments.

Fig. 1 shows a schematic flow chart of an implementation of a machine recovery method according to an embodiment of the present application.

Referring to fig. 1, the machine recovery method according to the embodiment of the present application at least includes the following operation flows: operation 101, after core components are replaced on a machine table, performing thickness detection before etching on a monitoring wafer to obtain a first thickness; an operation 102, etching the monitoring wafer by using a machine; operation 103, performing thickness detection on the monitoring wafer after etching to obtain a second thickness; and operation 104, judging the running state of the machine according to the first thickness and the second thickness, wherein the running state is used for reflecting whether the machine runs normally after the core component is replaced.

In operation 101, after core components are replaced on the machine table, pre-etching thickness detection is performed on the monitoring wafer to obtain a first thickness.

In this embodiment of the present application, the semiconductor manufacturing process involves a plurality of Contact processes, such as: film deposition, chemical mechanical polishing, pattern exposure and development, dry etching and the like, and relates to various machines in the manufacturing process. In the chip manufacturing process, the machine may be down or the service time of the random machine increases, and the internal components may also reach their upper life limit, for example: the core components such as ESC (electrostatic chuck) or UEL (upper electrode) of the machine related to the Contact process need to be replaced periodically, and the replacement of the components of the CT machine (machine related to the Contact process) is also called as the maintenance of the work. In order to ensure the operating state of the CT machine, after the CT machine (the related machine of the Contact process) is replaced, the recovery process needs to verify the over-etching amount of the CT machine, so as to ensure that the OE (over-etching) amount of the post-construction machine to the CT is sufficient, and avoid the phenomenon of open circuit of the CT open (due to over-slow etching) caused by insufficient etching amount of the CT machine. Meanwhile, the phenomenon that the CT machine is etched too fast and punch through (perforation) is caused due to too large over-etching amount of the CT machine is avoided.

In this embodiment of the present application, various problems may be avoided by using SEM dicing to determine whether the OE level of the CT tool is sufficient after the wafer is etched. After the work maintenance and the core component replacement are carried out on the CT machine, before the wafer is etched by using the CT machine, the thickness of the monitored wafer before etching is detected to obtain a first thickness.

In this embodiment of the application, when the thickness of the monitoring wafer is detected before etching, a thickness of an oxide layer of the monitoring wafer before etching can be monitored by using a film thickness machine.

Furthermore, after the CT machine is repaired and the core components are replaced, a series of conventional recovery processes such as MFC, PA, ER, etc. can be performed on the CT machine. Then, grow 2-3 times the Oxide thickness of the normal product thin film structure on the Depth wafer dedicated to Depth Oxide. Taking SGT (Shielded Gate Transistor) power device as an example, the total Oxide THK (Oxide thickness) of the positions of poly1 (polycrystalline material such as polysilicon) etched to the deepest position is about 20KA, so that Oxide of about 45KA is grown on a Depth wafer according to the film structure of an actual product, and the region is defined as Pad a (Pad a) region. Furthermore, before the wafer with the deep oxide film is etched, the actual thickness of the oxide layer in the area is tested by a film thickness measuring machine, and the obtained value X1 (KA) is recorded and used as the first thickness of the monitored wafer before the wafer is etched.

Here, when the actual thickness of the oxide layer in the region is measured by the film thickness measuring machine, a general measurement method of the film thickness amount may be adopted.

At operation 102, the monitor wafer is etched by the machine.

In this embodiment of the present application, the method of etching the wafer can be implemented by using a general method.

For example, the monitor wafer may be developed by photoresist-spreading, and then a plurality of monitor wafers using the same product processed by the same process may be etched by the CT machine.

In operation 103, the post-etching thickness of the monitor wafer is detected to obtain a second thickness.

In this embodiment of the application, when the thickness of the monitoring wafer is detected after etching, the thickness of the oxide layer of the monitoring wafer after etching can be monitored by using a film thickness machine.

For example, after photoresist spreading and developing, etching is performed by using the same product recipe through a machine, photoresist is removed after etching, then THK measurement is performed in the same Pad a area by using a film thickness detection machine, and a value X2 (KA) obtained by the measurement is recorded and is used as a second thickness obtained by performing thickness detection on a monitored wafer after etching. The same Pad A area refers to the thickness detection of the same area of the monitoring wafer, wherein the thickness detection is aimed at the first thickness of the monitoring wafer before etching and the second thickness obtained by the thickness detection of the monitoring wafer after etching.

And operation 104, judging the running state of the machine according to the first thickness and the second thickness, wherein the running state is used for reflecting whether the machine runs normally after the core component is replaced.

In this embodiment of the present application, the operation state of the machine is determined according to the first thickness and the second thickness, and the following operations may be adopted: and determining the etching thickness of the machine according to the first thickness and the second thickness, and judging the running state of the machine according to the etching thickness.

Specifically, by operation 101, an Oxide thickness 2-3 times that of a normal product thin film structure is grown on a Depth wafer dedicated to Depth Oxide. Taking an SGT power device as an example, the total Oxide THK etched to the deepest poly1 position is about 20KA, so that an Oxide with about 45KA is grown on a Depth wafer according to the film structure of an actual product, a Pad A area is defined, the actual THK of the Oxide layer in the area is tested through a film thickness measuring machine before etching, and the obtained value X1 (KA) is recorded. In the operation, photoresist is spread and developed, then the same product, namely recipe, is used for etching through a machine, the THK measurement is carried out on the photoresist in the same Pad area through a film thickness measuring machine after etching, and the value X2 (KA) obtained through measurement is recorded.

The etching thickness of the machine determined by the difference value of the first thickness and the second thickness is enough, the over-etching amount of the machine is enough only when the etching thickness is enough, the etching process of the machine can reach the deepest etching depth of the product, and therefore the normal running state of the machine can be judged.

It should be noted that different products have different etching thicknesses, and the scheme is described here by taking the example that the total Oxide THK of the deepest poly1 position etched by the same product is about 20 KA. In the practical application process, the total Oxide THK etched to the deepest poly1 position of other products may be other values such as 30KA and the like.

In order to determine the operating state of the machine more reasonably, in this embodiment of the present application, the following operations may be adopted to determine the operating state of the machine according to the over-etching amount: and when the over-etching amount is smaller than the first threshold and larger than the second threshold, judging that the machine operates normally, and when the over-etching amount is larger than the first threshold or the over-etching amount is smaller than the second threshold, judging that the machine operates abnormally.

For example, for a product with a total Oxide THK of about 20KA etched to the deepest poly1 location, the first threshold may be set to 25 and the second threshold may be set to 30. Of course, the values of the first threshold and the second threshold are not specifically limited in this application.

Here, the first set threshold needs to be set according to the deepest etching depth of the oxide layer of the product. In the practical application process, the first threshold and the second threshold may be set according to the requirement, which is not specifically limited in the present application.

In another embodiment of the present application, the over-etching amount process of the machine may be determined by using the following formula (1) according to the first thickness and the second thickness, and when OE is smaller than a third set threshold and larger than a fourth set threshold, it is determined that the machine is operating normally.

Wherein OE represents the over-etching amount; x1 represents a first thickness; x2 represents a second thickness; h represents the deepest thickness of the etch of the monitor wafer.

Here, the concept of over-etching is briefly explained, when a thin film is etched, the etching rate and the thickness of the thin film in a wafer are not completely uniform, a small portion of the thin film remains after main etching, and the process of removing the remaining thin film is called over-etching. The first thickness is the thickness of the oxide layer before etching, the second thickness is the thickness of the oxide layer after etching, and the difference between the first thickness and the second thickness is the etching thickness. Under an ideal state, if the etching thickness can meet the requirement of the deepest etching depth of the oxide layer for producing the same product by adopting the same process, the operation of the machine is normal. That is, ideally X1-X2 is exactly equal to H, and the ratio of X1-X2 to H is exactly 1. Here, the over-etching amount OE is defined as the ratio of X1-X2 to H minus 1.

In the practical application process, any production has an error meeting the production requirement of the product, and the production equipment designs certain margins for the product parameters according to the actual production requirement. The over-etching amount is the margin set in the etching process.

In this embodiment of the present application, the machine recovery method according to the embodiment of the present application further performs normal recovery on the machine when the operation state shows that the machine is operating normally. And when the operation state shows that the machine station operates abnormally, sending out a prompt to prompt the machine station of the CT to be inspected and maintained again.

Therefore, the machine resetting method provided by the embodiment of the application is used for simply, conveniently and effectively monitoring the OE result of post-construction CT, and the time and cost consumed by the resetting process are greatly reduced.

Fig. 2 is a schematic diagram illustrating an implementation flow of a specific application example of a machine recovery method according to an embodiment of the present application.

Referring to fig. 2, a specific application example of the machine recovery method in the embodiment of the present application at least includes the following operation flows:

and operation 201, maintaining the machine station by workers.

At operation 202, the machine replaces Key parts.

And operation 203, performing conventional multi-machine monitoring such as MFC & PAD & ER on the machine.

In operation 204, the trough wafer is pre-THK (thickness) dosed on the bench.

Fig. 3 is a schematic diagram illustrating an implementation principle of detecting an over-etching thickness of a wafer in a specific application example of the machine recovery method according to the embodiment of the present application.

Referring to FIG. 3, oxide thicknesses 2 to 3 times that of the normal product thin film structure were grown on a Depth wafer dedicated to Depth Oxide. Taking an SGT power device as an example, the total Oxide THK etched to the deepest poly1 position is about 20KA, so that an Oxide of about 45KA is grown on a Depth wafer according to the film structure of an actual product. The Pad a region is predefined, and fig. 3 shows 13 exemplary positions 1-13 on the wafer, and five monitoring regions A, B, C, D and E are taken at position 2, wherein the Pad a region is used for illustrating thickness measurement before and after etching the wafer. And testing the actual THK of the Oxide layer in the Pad A area by a film thickness measuring machine before etching, and recording the obtained value X1 (KA). .

In operation 205, the Depth wafer is etched by the machine.

In operation 206, the post-THK amount is applied to the Depth wafer.

And developing by photoresist, etching by using the same product recipe through a machine, removing the photoresist after etching, performing THK measurement in the same Pad area by using a film thickness measuring machine, and recording a numerical value X2 (KA) obtained by measurement.

At operation 207, with reference to equation (1) above, it is calculated whether the OE amount of the tool is sufficient.

From the first thickness and the second thickness, one can calculate whether the OE amount of the tool is sufficient, with reference to equation (1) above.

In a more preferred embodiment of the present application, a corresponding CT OE% monitor chart (a table for monitoring OE amount detection of a machine tool) may be further established, and after the machine tool is finished, a plurality of monitoring areas on a wafer may be taken for conventional monitoring of OE amount. And when the OE quantities of the monitoring areas all meet the preset target, judging that the working state of the machine is normal, and executing a subsequent recovery process.

Fig. 4 shows a table for monitoring detection of OE amount of a machine in a specific application example of a machine recovery according to the embodiment of the present application.

Referring to FIG. 4, if the OE amount is 30% Target, 40% USL (Upper Spec line) and 20% LSL (Lower Spec line). When the result obtained by doing monitor after the work exceeds the USL or is lower than the LSL range, OE% is abnormal, and the fault of the machine needs to be checked again. When the OE% is greater than 40%, it indicates that the machine is etched too fast, which may cause a punch through phenomenon on the wafer, and when the OE% is less than 20%, it indicates that the machine is etched too slow, which may cause an open phenomenon on the CT machine. On the other hand, the OE amount of the tool may be determined to be sufficient when OE% is set to 20% < OE% < 40%.

If the OE level of the tool is sufficient, perform operation 208; otherwise, operation 209 is performed.

In operation 208, a Pi-run process is performed on the tool.

At operation 209, the tool continues to be checked for exceptions.

The specific implementation process of operations 201 to 209 is similar to the specific implementation process of operations 101 to 104 in the embodiment shown in fig. 1, and is not described here again.

In order to better improve the specific improvement point of the scheme of the present application, fig. 5 illustrates an implementation flow diagram of a conventional machine recovery method, which is compared with the machine recovery methods illustrated in fig. 1 to 4 of the present application.

Referring to fig. 5, a conventional machine recovery method may include the following operations:

and operation 501, performing work maintenance on the machine.

At operation 502, the machine replaces Key parts.

And operation 503, performing conventional multi-machine monitoring such as MFC & PAD & ER on the machine.

In operation 504, the Depth wafer is etched by the machine.

In operation 505, SEM dicing is performed on the wafer.

At operation 506, the CT tool is tested for an OE level sufficient. If so, perform operation 507; otherwise, operation 508 is performed.

In operation 507, a Pi-run (recovery) process is performed on the machine.

At operation 508, the tool continues to be checked for anomalies.

Therefore, compared with the conventional machine resetting method, the machine resetting method provided by the embodiment of the application monitors the thickness difference of the oxide before and after CT etching by defining the Monitor Pad area, and judges whether the OE amount of the machine CT etching after part replacement is enough. Therefore, the higher daily monitoring expenditure caused by SEM slicing is effectively reduced, the machine resetting time after work is effectively shortened, and the production capacity is obviously improved.

The embodiment of the application provides a machine resetting method and device, a semiconductor device manufacturing method, a storage medium and electronic equipment. After the machine station carries out core component replacement, thickness detection is carried out on the monitoring wafer before etching to obtain a first thickness, further, the machine station is used for etching the monitoring wafer, thickness detection is carried out on the monitoring wafer after etching to obtain a second thickness, the running state of the machine station is judged according to the first thickness and the second thickness, and the running state is used for reflecting whether the machine station normally runs after core component replacement is carried out on the machine station. Therefore, whether the over-etching amount of the machine station etching is enough after the core component of the machine station is replaced is judged by detecting the thickness difference of the monitoring wafer before and after the wafer etching. The high daily monitoring expenditure caused by machine resetting detection through the processes of SEM slicing and the like is effectively reduced, the time for resetting the machine after work is effectively shortened, the production capacity is obviously improved, the production cost is effectively reduced, and the production utilization rate of the machine is improved.

Similarly, based on the above machine recovery method, the embodiment of the present application further provides a computer-readable storage medium, where a program is stored, and when the program is executed by a processor, the processor is caused to perform at least the following operation steps: operation 101, after core components are replaced on a machine table, performing thickness detection before etching on a monitoring wafer to obtain a first thickness; an operation 102, etching the monitoring wafer by using a machine; operation 103, performing thickness detection on the monitoring wafer after etching to obtain a second thickness; and operation 104, judging the running state of the machine according to the first thickness and the second thickness, wherein the running state is used for reflecting whether the machine runs normally after the core component is replaced.

Further, based on the above machine resetting method, an embodiment of the present application further provides a method for manufacturing a semiconductor device, where the method includes: the machine resetting method is adopted to reset the machine used in the manufacturing process of the semiconductor device.

Further, based on the above machine resetting method, an embodiment of the present application further provides a machine resetting device, as shown in fig. 6, where the device 60 includes: the first detection module 601 is configured to perform pre-etching thickness detection on a monitor wafer after a machine performs core component replacement, so as to obtain a first thickness; an etching module 602, configured to etch the monitoring wafer by using a machine; the second detection module 603 is configured to perform thickness detection on the monitoring wafer after etching, so as to obtain a second thickness; the determining module 604 is configured to determine an operating state of the machine according to the first thickness and the second thickness, where the operating state is used to reflect whether the machine normally operates after the core component is replaced.

Still further, based on the above machine recovery method, an embodiment of the present application further provides an electronic device, and referring to fig. 7, the device 70 includes at least one processor 701, and at least one memory 702 and a bus 703 that are connected to the processor 701; the processor 701 and the memory 702 complete mutual communication through a bus 703; the processor 701 is configured to call the program instructions in the memory 702 to execute the machine recovery method.

Here, it should be noted that: the above descriptions of the embodiments of the machine resetting device, the method for manufacturing a semiconductor device, the storage medium and the electronic apparatus are similar to the descriptions of the embodiments of the method shown in fig. 1 to 4, and have similar beneficial effects to the embodiments of the method shown in fig. 1 to 4, and therefore are not repeated. For technical details that are not disclosed in the embodiments of the apparatus recovery method, apparatus, semiconductor device manufacturing method, storage medium, and electronic device of the present application, please refer to the description of the method embodiments shown in fig. 1 to 4 for brevity, and thus, detailed descriptions thereof are omitted.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another like element in a process, method, article, or apparatus that comprises the element.

In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described device embodiments are merely illustrative, for example, the division of the unit is only one logical function division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. In addition, the coupling, direct coupling or communication connection between the components shown or discussed may be through some interfaces, and the indirect coupling or communication connection between the devices or units may be electrical, mechanical or in other forms.

The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units; can be located in one place or distributed on a plurality of network units; some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

In addition, all functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may be separately regarded as one unit, or two or more units may be integrated into one unit; the integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit.

Those of ordinary skill in the art will understand that: all or part of the steps for realizing the method embodiments can be completed by hardware related to program instructions, the program can be stored in a computer readable storage medium, and the program executes the steps comprising the method embodiments when executed; and the aforementioned storage medium includes: various media that can store program codes, such as a removable Memory device, a Read Only Memory (ROM), a magnetic disk, or an optical disk.

Alternatively, the integrated units described above in the present application may be stored in a computer-readable storage medium if they are implemented in the form of software functional modules and sold or used as independent products. Based on such understanding, the technical solutions of the embodiments of the present application may be essentially implemented or portions thereof that contribute to the prior art may be embodied in the form of a software product stored in a storage medium, and including several instructions for enabling a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the methods of the embodiments of the present application. And the aforementioned storage medium includes: a removable storage device, a ROM, a magnetic or optical disk, or other various media that can store program code.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A machine recovery method, the method comprising:

after the machine station carries out core component replacement, carrying out thickness detection on the monitoring wafer before etching to obtain a first thickness;

etching the monitoring wafer by using the machine table;

performing thickness detection on the monitoring wafer after etching to obtain a second thickness;

and judging the running state of the machine according to the first thickness and the second thickness, wherein the running state is used for reflecting whether the machine runs normally after the core component is replaced.

2. The method of claim 1, wherein the pre-etch thickness detection of the monitor wafer comprises:

monitoring the thickness of the oxide layer of the monitoring wafer before etching by using a film thickness machine; accordingly, the method can be used for solving the problems that,

the thickness detection after the monitoring wafer is etched comprises the following steps:

and monitoring the thickness of the oxide layer of the monitoring wafer after etching by using a film thickness machine.

3. The method of claim 1, wherein determining the operating state of the machine according to the first thickness and the second thickness comprises:

determining the etching thickness of the machine according to the first thickness and the second thickness;

and judging the running state of the machine according to the over-etching thickness.

4. The method according to claim 3, wherein the determining the operating state of the machine according to the etching thickness comprises:

when the etching thickness is smaller than a first threshold value and larger than a second threshold value, judging that the machine station normally operates;

and when the etching thickness is greater than the first threshold value or the etching thickness is smaller than the second threshold value, judging that the machine platform operates abnormally.

5. The method of claim 1, wherein determining the operating state of the machine according to the first thickness and the second thickness comprises:

determining the over-etching amount by adopting the following formula:

wherein OE represents the over-etching amount;

x1 represents the first thickness;

x2 represents the second thickness;

h represents the deepest thickness of the monitoring wafer in the etching process;

and when the OE is smaller than a third set threshold and larger than a fourth set threshold, judging that the machine runs normally.

6. The method according to any one of claims 1-5, further comprising:

when the operation state shows that the machine station operates normally, the machine station is normally recovered;

and sending out a prompt when the operation state shows that the machine station operates abnormally.

7. A method of manufacturing a semiconductor device, the method comprising:

repeating the machine used in the manufacturing process of the semiconductor device by using the machine repeating method as claimed in any one of claims 1 to 6.

8. A machine rehabilitation apparatus, the apparatus comprising:

the first detection module is used for detecting the thickness of the monitoring wafer before etching after the core component of the machine is replaced, so as to obtain a first thickness;

the etching module is used for etching the monitoring wafer by utilizing the machine;

the second detection module is used for detecting the thickness of the monitoring wafer after etching to obtain a second thickness;

and the judging module is used for judging the running state of the machine according to the first thickness and the second thickness, and the running state is used for reflecting whether the machine runs normally after core components are replaced.

9. A computer-readable storage medium comprising a set of computer-executable instructions that, when executed, perform the machine recovery method of any of claims 1-6.

10. An electronic device comprising at least one processor, and at least one memory, bus connected with the processor; the processor and the memory are communicated with each other through the bus; the processor is configured to call program instructions in the memory to perform the machine recovery method of any of claims 1-6.

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