CN115852313A - Film for folding type charging pile flexible electronic device, preparation method and application - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 28
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000013077 target material Substances 0.000 claims abstract description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052786 argon Inorganic materials 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000005452 bending Methods 0.000 claims abstract description 7
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000002050 diffraction method Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 3
- 238000012360 testing method Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Abstract
The invention discloses a film for a folding type charging pile flexible electronic device, and a preparation method and application thereof. Preparation: (1) Ultrasonically cleaning a silicon wafer with the surface crystallography direction of (110) in acetone, ethanol and deionized water; (2) Placing the silicon wafer in a sample sending chamber of radio frequency magnetron sputtering equipment, vacuumizing, and removing residual water vapor on the surface of the silicon wafer; (3) Mixing Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Placing the alloy target material in a sputtering cavity for pre-sputtering, and removing oxides and dirt on the surface of the target material; (4) Conveying the silicon wafer to a sample table in a sputtering cavity, adjusting the sample table to rotate, and rotating the silicon wafer along with the sample table; (5) Setting sputtering voltage, working pressure,Sputtering time, sputtering distance, argon flow, vacuum degree of a sputtering cavity and sputtering; (6) And after sputtering is finished, the sample is cooled along with cavity annealing, and the sample is taken out, so that the film for the foldable charging pile flexible electronic device is obtained. The application comprises the following steps: the prepared film is used in a folding type charging pile electronic device capable of bearing alternating load and bending deformation. The preparation method is simple to operate and can be used for mass production, and the prepared film has high toughness and wide application prospect in the field of folding type charging pile flexible electronic devices.
Description
Technical Field
The invention relates to the technical field of charging piles, in particular to a film for a folding type charging pile flexible electronic device, a preparation method and application.
Background
The charging pile infrastructure is one of key factors influencing the popularization of new energy automobiles in China. The future development trend of the charging pile electronic device is that the organic/inorganic material electronic device can be manufactured on a flexible/ductile substrate, and the requirement that the whole folding type charging pile structure can be folded and stretched is met. Therefore, the flexible electronic device is a core technology for supporting the future foldable multifunctional charging pile, and comprises a circuit, a sensor, electrodes, a chip, a resistor and the like. However, the inorganic materials used to prepare the functional units of flexible electronic devices have a certain fracture toughness, and when the tensile ductility exceeds this limit, the inorganic materials fracture and lose their functions, thereby causing the failure and destruction of the inorganic flexible electronic devices. The improvement of the fracture toughness and the electrical property of the inorganic material has important significance, and the appearance of the high-entropy alloy makes the improvement possible. The high-entropy alloy has incomparable excellent performances such as high strength, high hardness, high wear resistance, high corrosion resistance, high thermal resistance, high resistance and the like compared with the traditional alloy material, so that the high-entropy alloy has high application value and prospect in the field of materials. The high-entropy alloy can also show the same performance as the high-entropy alloy when being attached to the surface of a semiconductor substrate to form a tough film, and the high-entropy alloy film serving as a new-generation two-dimensional material becomes a breakthrough for preparing the foldable charging pile flexible electronic device.
Disclosure of Invention
Aiming at the technical problem of poor toughness of microelectronic devices prepared from existing inorganic materials, the invention provides a simple preparation method of a film for a foldable charging pile flexible electronic device.
The invention is realized by the following technical scheme:
a preparation method of a film for a folding type charging pile flexible electronic device comprises the following steps:
(1) Cleaning a substrate: sequentially placing a silicon wafer with the surface crystallography direction of (110) in acetone, ethanol and deionized water for ultrasonic cleaning;
(2) Sample sending: placing the cleaned silicon wafer in a sample sending chamber of radio frequency magnetron sputtering equipment and vacuumizing;
(3) Pre-sputtering a target material: mixing Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Placing the alloy target material in a sputtering cavity for pre-sputtering; and the vacuum degree of the cavity is not lower than 2 multiplied by 10 during the pre-sputtering −7 The argon flow is 20-40sccm, the working pressure is 3-10mTorr, the sputtering time is 1-3h, the pre-sputtering voltage is 50-150V, and the temperature of the cavity is cooled to 20-30 ℃ after the sputtering is finished;
(4) Adjusting a sample stage: conveying the silicon wafer prepared in the step (2) to a sample table in the sputtering cavity, and adjusting the sample table to rotate;
(5) Sputtering: setting the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Sputtering voltage, working pressure, sputtering time, sputtering distance, argon flow and vacuum degree of the sputtering cavity of the alloy target material, and then starting sputtering;
(6) Annealing: and closing the working system after sputtering is finished, and taking out the sample after the cavity is cooled to obtain the foldable thin film for the flexible electronic device of the charging pile.
Further, the ultrasonic cleaning time in the step (1) is 15-30 minutes, and the ultrasonic frequency is 90-110Hz.
Further, lofting in the step (2): placing the cleaned silicon wafer in a sample conveying chamber of a radio frequency magnetron sputtering device and vacuumizing, wherein the vacuum degree is not less than 5 multiplied by 10 -3 And (5) Torr. The residual water film on the surface of the silicon wafer can be removed by vacuumizing.
Further, step (ii)(3) The Cr as described in 22 Co 19 Ni 17 Fe 19 Mn 23 The purity of the alloy target material is 99.99%.
Further, the rotating speed of the sample stage in the step (4) is 20rpm.
Further, sputtering in step (5): setting the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The sputtering voltage of the alloy target is 100-200V, the working pressure is 3-5mTorr, the sputtering time is 15-30min, the sputtering distance is 10cm, the argon flow is 20-30sccm, and the vacuum degree of the sputtering cavity is not lower than 2 multiplied by 10 −7 Torr。
Further, annealing in the step (6): and after sputtering is finished, closing the working system, cooling the sputtering cavity to 20-30 ℃ along with the cavity, and taking out the sample to obtain the film for the foldable charging pile flexible electronic device.
The film for the folding type charging pile flexible electronic device is characterized by being prepared by the preparation method. Cr prepared by the invention 22 Co 19 Ni 17 Fe 19 Mn 23 The alloy film has a phase structure of single-phase FCC and a microstructure of columnar nanocrystalline and high-density twin crystal.
The application of the film for the foldable charging pile flexible electronic device is characterized in that the film prepared by the preparation method is used for the foldable charging pile electronic device which can be subjected to alternating load and bending deformation. Cr prepared by the invention 22 Co 19 Ni 17 Fe 19 Mn 23 The alloy film has high toughness, and can be used in folding type charging pile electronic devices which can be subjected to alternating load and bending deformation.
The invention has the beneficial effects that:
the preparation method is simple to operate and can be used for mass production, and the prepared film has high toughness and wide application prospect in the field of folding type charging pile flexible electronic devices. Cr for flexible electronic devices of foldable charging piles prepared by the invention 22 Co 19 Ni 17 Fe 19 Mn 23 The radio frequency magnetron sputtering method adopted by the alloy film has high efficiencyThe area of the working range is large, the cost is low, and the control precision of the thickness, the components and the microstructure of the film is high; cr for preparing folding type charging pile flexible electronic device 22 Co 19 Ni 17 Fe 19 Mn 23 The nano-crystal and lattice distortion of the film can generate scattering effect on electrons, and the high-density twin crystal structure can generate high toughness. The film for the foldable charging pile flexible electronic device, which is prepared by the invention, has high toughness and electrical property by adjusting the toughness and the electrical property by controlling the microstructure of the film.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 shows Cr prepared in example 3 of the present invention 22 Co 19 Ni 17 Fe 19 Mn 23 Toughness index H of film 3 /E 2 Drawing;
FIG. 2 (a) is a diagram showing Cr prepared in example 3 of the present invention 22 Co 19 Ni 17 Fe 19 Mn 23 XRD pattern of the film;
FIG. 2 (b) is a diagram showing Cr produced in example 3 of the present invention 22 Co 19 Ni 17 Fe 19 Mn 23 A surface topography map of the film;
FIG. 2 (c) is a diagram showing Cr prepared in example 3 of the present invention 22 Co 19 Ni 17 Fe 19 Mn 23 The thickness of the film;
FIG. 2 (d) is a chart showing Cr produced in example 3 of the present invention 22 Co 19 Ni 17 Fe 19 Mn 23 Microstructure of the film.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The single-side polished monocrystalline silicon substrate is cleaned by ultrasonic cleaning through acetone, alcohol and deionized water, the silicon substrate is fixed on a baffle plate and is placed into a sample sending chamber of radio frequency magnetron sputtering equipment for vacuumizing, a vacuum pump of the sample sending chamber is closed, and target materials are pre-sputtered; and conveying the silicon wafer substrate and the baffle plate to a sample table of a sputtering cavity, rotating the sample table, setting parameters such as sputtering voltage, working pressure, sputtering time, gas flow and the like, sputtering, annealing and cooling to obtain the film with high toughness and resistance.
Example 1
A preparation method of a film for a folding type charging pile flexible electronic device comprises the following steps:
(1) Cleaning a substrate: placing the cut single-side polished silicon wafer in acetone, ethanol and deionized water in sequence for ultrasonic cleaning; the time of each ultrasonic cleaning is 15 minutes, and the ultrasonic frequency is 100Hz;
(2) Lofting: fixing the cleaned silicon wafer on a baffle plate, and then placing the silicon wafer in a sample conveying chamber of a radio frequency magnetron sputtering device for vacuumizing, wherein the vacuum degree is higher than 5 multiplied by 10 -3 Torr, and then closing a vacuum pump of the sample sending chamber; vacuumizing to remove the residual water film on the surface of the organic glass substrate;
(3) Pre-sputtering a target material: mixing Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Placing the high-entropy alloy target material in a sputtering cavity for pre-sputtering; and the vacuum degree of the cavity is higher than 2 multiplied by 10 during the pre-sputtering −7 Torr, argon flow of 20sccm, working pressure of 3mTorr, sputtering time of 25 minutes, pre-sputtering voltage of 50V, and cooling the cavity temperature to 20 ℃ after sputtering is finished; and the Cr is 22 Co 19 Ni 17 Fe 19 Mn 23 The purity of the alloy target material is 99.99 percent;
(4) Adjusting a sample stage: opening a gate between the sample conveying chamber and the sputtering chamber, conveying the silicon wafer prepared in the step (2) to a sample table in the sputtering chamber, and adjusting the sample table to rotate at the rotating speed of 20rpm;
(5) Sputtering: set up the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The sputtering voltage of the alloy target material is 100V, the working pressure is 3mTorr, the sputtering time is 1 hour, the sputtering distance is 10cm, the flow of high-purity argon is 20sccm, and the vacuum degree of the sputtering cavity is not lower than 2 multiplied by 10 −7 Torr, and then starting sputtering;
(6) Annealing: closing the working system after sputtering is finished, taking out the sample after the cavity is cooled to 20 ℃, and obtaining the Cr for the flexible electronic device of the folding charging pile 22 Co 19 Ni 17 Fe 19 Mn 23 A film.
And (3) testing: testing of Cr obtained in example 1 with TI950 nanoindenter 22 Co 19 Ni 17 Fe 19 Mn 23 Toughness of the film, cr prepared in example 1 was obtained 22 Co 19 Ni 17 Fe 19 Mn 23 Toughness index H of film 3 /E 2 The average value was 0.01GPa.
Cr obtained in example 1 above 22 Co 19 Ni 17 Fe 19 Mn 23 Thin films are used in electronic devices that are subject to alternating loads and bending deformation.
Example 2
A preparation method of a film for a folding type charging pile flexible electronic device comprises the following steps:
(1) Cleaning a substrate: placing the cut single-side polished silicon wafer in acetone, ethanol and deionized water in sequence for ultrasonic cleaning; the time of ultrasonic cleaning is 15 minutes each time, and the ultrasonic frequency is 100Hz;
(2) Lofting: fixing the cleaned silicon wafer on a baffle plate, and then placing the silicon wafer in a sample conveying chamber of a radio frequency magnetron sputtering device for vacuumizing, wherein the vacuum degree is higher than 5 multiplied by 10 -3 Torr, then shut downA vacuum pump of the sample sending chamber; vacuumizing to remove the residual water film on the surface of the organic glass substrate;
(3) Pre-sputtering a target material: mixing Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Placing the alloy target material in a sputtering cavity for pre-sputtering; and the vacuum degree of the cavity is higher than 2 multiplied by 10 during the pre-sputtering −7 Torr, argon flow of 30sccm, working pressure of 10mTorr, sputtering time of 25 minutes, pre-sputtering voltage of 100V, and cooling the cavity to 25 ℃ after sputtering; and the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The purity of the alloy target material is 99.99 percent;
(4) Adjusting a sample stage: opening a gate between the sample conveying chamber and the sputtering chamber, conveying the silicon wafer prepared in the step (2) to a sample table in the sputtering chamber, and adjusting the sample table to rotate at the rotating speed of 20rpm;
(5) Sputtering: setting the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The sputtering voltage of the alloy target is 150V, the working pressure is 5mTorr, the sputtering time is 2 hours, the sputtering distance is 10cm, the flow of high-purity argon is 30sccm, and the vacuum degree of the sputtering cavity is not lower than 2 multiplied by 10 −7 Torr, and then starting sputtering;
(6) Annealing: closing the working system after sputtering is finished, taking out the sample after the cavity is cooled to 30 ℃, and obtaining the Cr for the flexible electronic device of the folding charging pile 22 Co 19 Ni 17 Fe 19 Mn 23 A film.
And (3) testing: test of Cr prepared in example 2 with TI950 nanoindenter 22 Co 19 Ni 17 Fe 19 Mn 23 Toughness of the film to obtain Cr prepared in example 2 22 Co 19 Ni 17 Fe 19 Mn 23 Toughness index H of film 3 /E 2 The average value was 0.015GPa.
Cr obtained in example 2 above 22 Co 19 Ni 17 Fe 19 Mn 23 The films are used in folded charging post electronics that are subject to alternating loads and bending deformation.
Example 3
A preparation method of a film for a folding type charging pile flexible electronic device comprises the following steps:
(1) Cleaning a substrate: sequentially placing the cut single-side polished silicon wafer in acetone, ethanol and deionized water for ultrasonic cleaning; the time of each ultrasonic cleaning is 15 minutes, and the ultrasonic frequency is 100Hz;
(2) Lofting: fixing the cleaned silicon wafer on a baffle plate, and then placing the silicon wafer in a sample conveying chamber of a radio frequency magnetron sputtering device for vacuumizing, wherein the vacuum degree is higher than 5 multiplied by 10 -3 Torr, and then closing a vacuum pump of the sample sending chamber; vacuumizing to remove the residual water film on the surface of the organic glass substrate;
(3) Pre-sputtering a target material: mixing Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Placing the alloy target material in a sputtering cavity for pre-sputtering; and the vacuum degree of the cavity is higher than 2 multiplied by 10 during the pre-sputtering −7 Torr, argon flow of 40sccm, working pressure of 5mTorr, sputtering time of 25 minutes, pre-sputtering voltage of 150V, and cooling the cavity temperature to 30 ℃ after sputtering is finished; and the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The purity of the alloy target material is 99.99 percent;
(4) Adjusting a sample stage: opening a gate between the sample conveying chamber and the sputtering chamber, conveying the silicon wafer prepared in the step (2) to a sample table in the sputtering chamber, and adjusting the sample table to rotate at the rotating speed of 20rpm;
(5) Sputtering: setting the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The sputtering voltage of the alloy target is 200V, the working pressure is 3mTorr, the sputtering time is 3 hours, the sputtering distance is 10cm, the flow of high-purity argon is 40sccm, and the vacuum degree of the sputtering cavity is not lower than 2 multiplied by 10 −7 Torr, and then starting sputtering;
(6) And (3) annealing: closing the working system after sputtering is finished, taking out the sample after the cavity is cooled to 25 ℃, and obtaining the Cr for the flexible electronic device of the folding charging pile 22 Co 19 Ni 17 Fe 19 Mn 23 A film.
And (3) testing: test with TI950 nanoindenterCr obtained in example 3 22 Co 19 Ni 17 Fe 19 Mn 23 The toughness of the film is shown in FIG. 1; cr prepared in example 3 was obtained 22 Co 19 Ni 17 Fe 19 Mn 23 Toughness index H of film 3 /E 2 The average value was 0.02GPa.
Cr obtained in example 3 above 22 Co 19 Ni 17 Fe 19 Mn 23 The film is used for folding charging post electronics that can be subject to alternating loads and bending deformation.
Cr obtained in example 3 above was treated with Rigaku TTRAX3 22 Co 19 Ni 17 Fe 19 Mn 23 The XRD test was carried out on the film, and the result is shown in fig. 2 (a), and it can be seen in fig. 2 (a) that the prepared film has a single-phase FCC structure.
Cr obtained in example 3 was observed with a FEI Tecnai G2F 20 scanning electron microscope 22 Co 19 Ni 17 Fe 19 Mn 23 The surface morphology, thickness and internal microstructure of the film are shown in fig. 2 (b), 2 (c) and 2 (d), wherein the surface of the film is a nano-strip structure as can be seen from fig. 2 (b); from FIG. 2 (c), it can be seen that the film thickness is about 1480nm; as can be seen from fig. 2 (d), the crystal grains of the film are columnar crystals, and a highly dense twin structure is distributed in the columnar crystals.
The above-mentioned preferred embodiments of the present invention are provided for illustration only and not for the purpose of limiting the invention. Obvious variations or modifications of the present invention are within the scope of the present invention.
Claims (9)
1. A preparation method of a film for a folding type charging pile flexible electronic device is characterized by comprising the following steps:
cleaning a substrate: sequentially placing a silicon wafer with the surface crystallography direction of (110) in acetone, ethanol and deionized water for ultrasonic cleaning;
sample sending: placing the cleaned silicon wafer in a sample sending chamber of radio frequency magnetron sputtering equipment and vacuumizing;
pre-sputtering the target material: mixing Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Placing the alloy target material in a sputtering cavity for pre-sputtering; and the vacuum degree of the cavity is not lower than 2 multiplied by 10 during the pre-sputtering −7 Torr, argon flow of 20-40sccm, working pressure of 3-10mTorr, sputtering time of 1-3h, pre-sputtering voltage of 50-150V, and cooling the cavity temperature to 20-30 ℃ after sputtering;
adjusting a sample stage: conveying the silicon wafer prepared in the step (2) to a sample table in the sputtering cavity, and adjusting the sample table to rotate;
sputtering: setting the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 Sputtering voltage, working pressure, sputtering time, sputtering distance, argon flow and vacuum degree of the sputtering cavity of the alloy target material, and then starting sputtering;
annealing: and closing the working system after sputtering is finished, and taking out the sample after the cavity is cooled to obtain the foldable thin film for the flexible electronic device of the charging pile.
2. The method for preparing the film for the foldable charging pile flexible electronic device, according to claim 1, is characterized in that the crystallographic direction of the surface of the silicon wafer in the step (1) is (110), the ultrasonic cleaning time is 15-30 minutes, and the ultrasonic frequency is 90-110Hz.
3. The method for preparing the film for the foldable charging pile flexible electronic device, according to claim 1, is characterized in that the step (2) of lofting: placing the cleaned silicon wafer in a sample conveying chamber of a radio frequency magnetron sputtering device and vacuumizing, wherein the vacuum degree is not less than 5 multiplied by 10 -3 Torr。
4. The method for preparing a film for a foldable charging pile flexible electronic device as claimed in claim 1, wherein the Cr is in step (3) 22 Co 19 Ni 17 Fe 19 Mn 23 Purity of the alloy target material is 99.99% 。
5. The method for preparing the film for the foldable charging pile flexible electronic device according to claim 1, wherein in the step (4), the rotating speed of the sample stage is 20rpm.
6. The method for preparing the film for the foldable charging pile flexible electronic device as claimed in claim 1, wherein the step (5) comprises the following steps: setting the Cr 22 Co 19 Ni 17 Fe 19 Mn 23 The sputtering voltage of the alloy target is 100-200V, the working pressure is 3-5mTorr, the sputtering time is 15-30min, the sputtering distance is 10cm, the argon flow is 20-30sccm, and the vacuum degree of the sputtering cavity is not lower than 2 multiplied by 10 −7 Torr。
7. The method for preparing the film for the foldable charging pile flexible electronic device, according to the claim 1, is characterized in that the step (6) comprises the following steps: and (3) closing the working system after sputtering is finished, annealing the sputtering cavity to 20-30 ℃, and taking out the sample to obtain the film for the foldable charging pile flexible electronic device.
8. A film for a folding-type charging pile flexible electronic device, characterized by being produced by the production method according to any one of claims 1 to 7.
9. Use of a film for a foldable charging post flexible electronic device, characterized in that the film produced by the production method according to any one of claims 1 to 7 is used in a foldable charging post electronic device which is subject to alternating loads and bending deformation.
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| KR101955370B1 (en) * | 2017-10-20 | 2019-03-07 | 충남대학교산학협력단 | CoCrFeMnNi Oxynitride High Entropy Alloy and Preparation Method for Thin Film thereof |
| CN110218929A (en) * | 2019-07-08 | 2019-09-10 | 广西大学 | A kind of method of Strengthening and Toughening FeMnNiCoCr high-entropy alloy |
| CN111575650A (en) * | 2020-05-29 | 2020-08-25 | 江苏理工学院 | Double-layer high-entropy alloy composite film and preparation method and application thereof |
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2021
- 2021-09-23 CN CN202111110180.5A patent/CN115852313A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107537065A (en) * | 2017-07-11 | 2018-01-05 | 吉林大学 | High-entropy alloy joint prosthesis based on in-situ test couples bionical construction method |
| KR101955370B1 (en) * | 2017-10-20 | 2019-03-07 | 충남대학교산학협력단 | CoCrFeMnNi Oxynitride High Entropy Alloy and Preparation Method for Thin Film thereof |
| CN110218929A (en) * | 2019-07-08 | 2019-09-10 | 广西大学 | A kind of method of Strengthening and Toughening FeMnNiCoCr high-entropy alloy |
| CN111575650A (en) * | 2020-05-29 | 2020-08-25 | 江苏理工学院 | Double-layer high-entropy alloy composite film and preparation method and application thereof |
Non-Patent Citations (2)
| Title |
|---|
| WANG, Z ET AL.: "Nanotwinned CoCrFeMnNi high entropy alloy films for flexible electronic device applications"，wang, Z et al.", 《VACUUM》, vol. 189, 17 April 2021 (2021-04-17), pages 2 * |
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