CN115832149A - Manufacturing method of LED chip structure and LED chip structure - Google Patents
Manufacturing method of LED chip structure and LED chip structure Download PDFInfo
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- CN115832149A CN115832149A CN202310112867.5A CN202310112867A CN115832149A CN 115832149 A CN115832149 A CN 115832149A CN 202310112867 A CN202310112867 A CN 202310112867A CN 115832149 A CN115832149 A CN 115832149A
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- silicon dioxide
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- covering layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 154
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 77
- 238000002955 isolation Methods 0.000 claims abstract description 75
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000011159 matrix material Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 125
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000007769 metal material Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The disclosure relates to the technical field of color conversion, in particular to a manufacturing method of an LED chip structure and the LED chip structure, wherein the method comprises the following steps: coating a silicon dioxide material on the chip body to completely cover the surface of the chip body so as to form a silicon dioxide covering layer on the chip body; etching the position of the silicon dioxide covering layer corresponding to the light-emitting unit in the chip body until part of the surface of the chip body is exposed so as to form an isolation matrix groove; according to the method, the color conversion material is coated on the silicon dioxide covering layer until the isolation matrix groove is completely filled to form the color conversion layer, and a material isolation boundary is formed between the silicon dioxide covering layer and the gallium nitride of the chip body, so that the etching end point in the etching process is ensured to be clear, the light-emitting unit in the chip body is prevented from being damaged, the chip body is protected, and the yield of the LED chip structure is increased.
Description
Technical Field
The present disclosure relates to the field of color conversion technologies, and in particular, to a method for manufacturing an LED chip structure and an LED chip structure.
Background
As a brand new Display technology, a Light Emitting Diode Display (Micro LED) technology is widely applied due to its characteristics of small size, high integration, self-luminescence, and the like. To achieve full color display of LEDs, a layer of color conversion material is usually disposed on the LED chip to display different illumination colors.
The conventional way of disposing the color conversion material is to etch the gallium nitride layer of the LED chip at the position corresponding to the light emitting unit to form a filling groove, and then fill the filling groove with the color conversion material to form the color conversion layer. However, since the light emitting unit embedded in the gan layer is also made of gan, an error in identifying an operation end point during etching is large, which increases a risk of damaging the light emitting unit, and affects a yield of LED chips.
Disclosure of Invention
In order to solve the technical problems or at least partially solve the technical problems, the present disclosure provides a manufacturing method of an LED chip structure and an LED chip structure.
In a first aspect, the present disclosure provides a method for manufacturing an LED chip structure, which includes:
coating a silicon dioxide material on a chip body, and enabling the silicon dioxide material to completely cover the surface of the chip body so as to form a silicon dioxide covering layer on the chip body; wherein, a plurality of light-emitting units are arranged in the chip body;
etching the positions, corresponding to the light-emitting units, of the silicon dioxide covering layer until part of the surface of the chip body is exposed so as to form isolation matrix grooves corresponding to all the light-emitting units;
and filling a color conversion material into the isolation matrix groove to form a color conversion layer.
Optionally, the etching the positions of the silicon dioxide covering layer corresponding to the light emitting units until part of the surface of the chip body is exposed to form the isolation matrix grooves corresponding to all the light emitting units further includes:
coating a metal material on the silicon dioxide covering layer, and enabling the metal material to completely cover the surface of the silicon dioxide covering layer and the groove wall surface of the isolation matrix groove so as to form a metal isolation layer on the silicon dioxide covering layer;
and etching and removing the metal isolation layer on the bottom surface of the isolation matrix groove and the metal isolation layer on the surface of the silicon dioxide covering layer far away from the chip body.
Optionally, the step of filling a color conversion material into the isolation matrix groove to form a color conversion layer specifically includes:
coating a color conversion material on the silicon dioxide covering layer, and enabling the color conversion material on the silicon dioxide covering layer to flow into the isolation matrix groove until the isolation matrix groove is completely filled with the color conversion material;
and removing the color conversion material on the silicon dioxide covering layer and outside the isolation matrix groove.
Optionally, the step of filling a color conversion material into the isolation matrix groove to form a color conversion layer further includes:
and depositing a material protective layer on the silicon dioxide covering layer and the color conversion layer.
In a second aspect, the present disclosure provides an LED chip structure manufactured according to the above method for manufacturing an LED chip structure, which includes a chip body, a silica covering layer, and a color conversion layer;
the chip body is internally provided with a plurality of light-emitting units, the surface of the chip body is completely covered with the silicon dioxide covering layer, an isolation matrix groove is formed in the position, corresponding to each light-emitting unit, of the silicon dioxide covering layer, and the isolation matrix groove extends to the surface of the chip body;
the color conversion layer is filled in the isolation matrix groove.
Optionally, a metal isolation layer is further disposed on a groove wall of the isolation matrix groove;
a portion of the surface of the chip body is exposed in the isolation matrix slot from the slot bottom of the isolation matrix slot.
Optionally, a material protection layer is completely covered on one side of the color conversion layer away from the chip body.
Optionally, the material of the material protection layer includes SiO 2 、Al 2 O 3 Or Si 3 N 4 。
Optionally, the thickness of the silicon dioxide covering layer is 1 μm-10 μm;
and/or the isolation matrix groove is formed by etching the silicon dioxide covering layer by using plasma.
Optionally, the color conversion material of the color conversion layer is a quantum dot material.
Compared with the prior art, the technical scheme provided by the disclosure has the following advantages:
according to the LED chip structure and the manufacturing method thereof, the silicon dioxide covering layer is formed by coating the silicon dioxide material on the surface of the chip body, then the position, corresponding to the light-emitting unit, on the silicon dioxide covering layer is etched to form the isolation matrix groove, and the color conversion material is filled in the isolation matrix groove to form the color conversion layer capable of corresponding to the light-emitting unit, so that the color conversion effect of the LED chip is realized, a material isolation boundary line can be formed between the silicon dioxide covering layer and gallium nitride of the chip body, the etching end point in the etching process is ensured to be clear, the surface of the chip body is not damaged, the light-emitting unit inside the chip body is prevented from being damaged, the chip body is protected, the process reliability is improved, and the yield of the LED chip structure is greatly increased.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic flow chart of a method for manufacturing an LED chip structure according to an embodiment of the present disclosure;
fig. 2 is a schematic structural view of the LED chip structure according to the embodiment of the present disclosure after a silicon dioxide covering layer is formed on a chip body;
fig. 3 is a schematic structural view of the LED chip structure according to the embodiment of the present disclosure after forming an isolation matrix groove on a silicon dioxide covering layer;
fig. 4 is a schematic structural view of the LED chip structure according to the embodiment of the present disclosure after a metal isolation layer is formed on a silicon dioxide covering layer;
fig. 5 is a schematic structural view of the LED chip structure according to the embodiment of the present disclosure after a portion of the metal isolation layer is stripped and removed;
fig. 6 is a schematic structural view of the LED chip structure according to the embodiment of the disclosure after the color conversion material is filled on the silicon dioxide covering layer;
fig. 7 is a schematic structural diagram of an LED chip structure according to an embodiment of the disclosure after a material protection layer is deposited.
Wherein, 1, a chip body; 11. a light emitting unit; 2. a silicon dioxide capping layer; 21. isolating the matrix slot; 3. a color conversion layer; 4. a metal isolation layer; 5. and (5) a material protection layer.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
The Micro LED technology is a new display technology, and has a wide application range due to its features of small size, high integration, self-luminescence, etc., and is used in the display field such as display screen, etc.
In the prior art, LED chips are usually made of gallium nitride, and LED chips made of gallium nitride can only emit blue light and green light, but cannot emit light of other colors, such as red light, and cannot meet application requirements. To realize full-color display, a layer of color conversion material is usually disposed on the LED chip by applying a color conversion technique, so that the LED chip can present different illumination colors.
The traditional method for disposing the color conversion layer is to form a filling groove by making a plurality of filling holes on the LED chip through an etching process at positions corresponding to the light emitting units on the gallium nitride layer of the LED chip, and then filling the groove with a color conversion material. However, since the material of the light emitting unit disposed in the gan layer is also gan, it is difficult to identify a clear operation end point during the etching process, and the light emitting unit may be damaged due to etching errors, which may affect the yield of the LED chip.
In view of the above defects, the present embodiment provides a method for manufacturing an LED chip structure and an LED chip structure, and the method for manufacturing an LED chip structure is improved to solve the problem that the LED chip is damaged by etching. Specifically, the manufacturing method of the LED chip structure is described in the following embodiments.
As shown in fig. 1, the present embodiment provides a method for manufacturing an LED chip structure, which includes the following steps:
102, etching the positions, corresponding to the light-emitting units, of the silicon dioxide covering layer until part of the surface of the chip body is exposed so as to form isolation matrix grooves corresponding to all the light-emitting units;
and 105, filling a color conversion material into the isolation matrix groove to form a color conversion layer.
The chip body comprises a chip substrate and an epitaxial layer, wherein the light-emitting unit is arranged on the chip substrate and is embedded in the epitaxial layer. The epitaxial layer is made of gallium nitride, and the light-emitting unit is also made of gallium nitride. The substrate may be a sapphire substrate or the like.
The light-emitting units are arranged in the chip body in a matrix manner to form a uniform light-emitting effect. Correspondingly, each groove unit of the isolation matrix groove is in one-to-one correspondence with the light-emitting unit, so that the light of the light-emitting unit can be emitted out on the chip. In an implementation manner, each groove unit of the isolation matrix groove may be a cylindrical groove with a constant cross section in a direction from the groove bottom to the notch, or a groove with a gradually increasing cross section in a direction from the groove bottom to the notch, so as to further ensure normal divergence of light. Illustratively, the present embodiment employs a cylindrical groove with a constant cross section.
When etching is performed in step 102, etching is performed until part of the surface of the chip body is exposed, so that the whole etching process is performed on the silicon dioxide covering layer, and an etching end point is formed at the junction of the silicon dioxide covering layer and the chip body due to the fact that the silicon dioxide covering layer and the chip body are made of different materials, so that the etching operation is facilitated.
When the etching operation is performed on the silicon dioxide covering layer, the etching operation may specifically be a plasma etching, but in other embodiments, other types of dry etching or wet etching may also be used, such as electrochemical etching.
Furthermore, in an implementable manner, the color conversion material of the color conversion layer may use quantum dot material, although in other embodiments other types of material may be used for the color conversion material.
In the method for manufacturing the LED chip structure provided by this embodiment, the silicon dioxide material is coated on the surface of the chip substrate to form the silicon dioxide covering layer, then the position of the silicon dioxide covering layer corresponding to the light emitting unit is etched to form the isolation matrix groove, and the color conversion material is filled in the isolation matrix groove to form the color conversion layer capable of corresponding to the light emitting unit, so as to realize the color conversion effect of the LED chip.
The method for manufacturing the LED chip structure provided in this embodiment is mainly used for manufacturing the LED chip structure, and in other embodiments, the method for manufacturing the LED chip structure of this embodiment may also be applied to other chip structures requiring color conversion, such as a display chip.
In some embodiments, step 102 is further followed by:
103, coating a metal material on the silicon dioxide covering layer, and enabling the metal material to completely cover the surface of the silicon dioxide covering layer and the groove wall surface of the isolation matrix groove so as to form a metal isolation layer on the silicon dioxide covering layer;
and 104, etching and removing part of the metal isolation layer positioned on the bottom surface of the isolation matrix groove and part of the metal isolation layer positioned on the surface of the silicon dioxide covering layer far away from the chip body.
The silicon dioxide covering layer is plated with a layer of metal with high reflectivity, then the metal on the upper surface is removed through directional etching, the metal on the side wall is reserved, the process is simple, the occurrence of optical crosstalk is effectively prevented, and the color conversion efficiency is improved. That is to say, the etching part on the chip body is formed by compounding silicon dioxide and metal, so that the chip has the advantage of total reflection of metal, improves the color conversion efficiency, has the advantage of low ductility of the silicon dioxide, and ensures the stability of the isolation matrix.
In an implementation, the metal material may be aluminum, but other metal materials capable of being applied to the chip structure may be used in other embodiments.
In some embodiments, step 105 specifically includes:
In some embodiments, step 1052 is followed by:
Alternatively, the material protection layer can be prepared by a low-temperature deposition method. The low temperature deposition method may be ALD (Atomic layer deposition).
After the LED chip structure is manufactured by the method for manufacturing an LED chip structure provided in this embodiment, a plurality of independent LEDs may be further formed, for example, a plurality of independent LEDs may be formed by etching through processes such as ICP etching.
The structure of the whole or part of the LED chip structure after the step 101 is shown in fig. 2, the structure of the whole or part of the LED chip structure after the step 102 is shown in fig. 3, the structure of the whole or part of the LED chip structure after the step 103 is shown in fig. 4, the structure of the whole or part of the LED chip structure after the step 104 is shown in fig. 5, the structure of the whole or part of the LED chip structure after the step 1052 is shown in fig. 6, and the structure of the whole or part of the LED chip structure after the step 106 is shown in fig. 7.
Therefore, according to the manufacturing method of the LED chip structure, the present embodiment further provides an LED chip structure, which includes a chip body 1, a silica covering layer 2 and a color conversion layer 3. The surface of the chip body 1 is completely covered with the silica covering layer 2, a plurality of isolation matrix grooves 21 are formed on the silica covering layer 2 at positions corresponding to the light-emitting units 11 in the chip body 1, each isolation matrix groove 21 extends to the surface of the chip body 1, the color conversion layer 3 is covered on one side of the silica covering layer 2 far away from the chip body 1, and the color conversion material of the color conversion layer 3 is filled in all the isolation matrix grooves 21.
Corresponding to the above steps 1051 and 1052, the isolation matrix groove 21 is further provided with a metal isolation layer 4 on the groove wall, and a portion of the surface of the chip body 1 to the groove bottom of the isolation matrix groove 21 is exposed in the isolation matrix groove 21. Corresponding to the above step 106, the side of the color conversion layer 3 away from the chip body 1 is completely covered with the material protection layer 5.
The thickness of the silicon dioxide cap layer 2 may be, for example, 1 μm to 10 μm, and 3 μm is used in the present embodiment. In addition, the material of the metal isolation layer 4 can be, for example, aluminum, and the material of the material protection layer 5 can be, for example, siO 2 、Al 2 O 3 Or Si 3 N 4 In this embodiment, siO is used 2 . Of course, in other embodiments, other types of materials may be used for the protective layer.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A manufacturing method of an LED chip structure is characterized by comprising the following steps:
coating a silicon dioxide material on a chip body, and enabling the silicon dioxide material to completely cover the surface of the chip body so as to form a silicon dioxide covering layer on the chip body; wherein the chip body is internally provided with a plurality of light-emitting units;
etching the positions, corresponding to the light-emitting units, of the silicon dioxide covering layer until part of the surface of the chip body is exposed so as to form isolation matrix grooves corresponding to all the light-emitting units;
and filling a color conversion material into the isolation matrix groove to form a color conversion layer.
2. The method according to claim 1, wherein the step of etching the silicon dioxide covering layer at positions corresponding to the light emitting units until a part of the surface of the chip body is exposed to form the isolation matrix grooves corresponding to all the light emitting units further comprises:
coating a metal material on the silicon dioxide covering layer, and enabling the metal material to completely cover the surface of the silicon dioxide covering layer and the groove wall surface of the isolation matrix groove so as to form a metal isolation layer on the silicon dioxide covering layer;
and etching and removing the metal isolation layer on the bottom surface of the isolation matrix groove and the metal isolation layer on the surface of the silicon dioxide covering layer far away from the chip body.
3. The method according to claim 1, wherein the step of filling the isolation matrix trench with a color conversion material to form a color conversion layer specifically comprises:
coating a color conversion material on the silicon dioxide covering layer, and enabling the color conversion material on the silicon dioxide covering layer to flow into the isolation matrix groove until the isolation matrix groove is completely filled with the color conversion material;
and removing the color conversion material on the silicon dioxide covering layer and outside the isolation matrix groove.
4. The method of claim 1, wherein the step of filling the isolation matrix trench with a color conversion material to form a color conversion layer further comprises:
and depositing a material protective layer on the silicon dioxide covering layer and the color conversion layer.
5. An LED chip structure manufactured by the method for manufacturing an LED chip structure according to any one of claims 1 to 4, comprising a chip body (1), a silica covering layer (2) and a color conversion layer (3);
the chip comprises a chip body (1), wherein a plurality of light-emitting units (11) are arranged in the chip body (1), the surface of the chip body (1) is completely covered with a silicon dioxide covering layer (2), an isolation matrix groove (21) is formed in the position, corresponding to each light-emitting unit (11), of the silicon dioxide covering layer (2), and the isolation matrix groove (21) extends to the surface of the chip body (1);
the color conversion layer (3) is filled in the isolation matrix groove (21).
6. The LED chip structure according to claim 5, wherein a metal isolation layer (4) is further disposed on the groove wall of the isolation matrix groove (21);
part of the surface of the chip body (1) is exposed in the isolation matrix groove (21) from the groove bottom of the isolation matrix groove (21).
7. LED chip structure according to claim 5, characterized in that the side of the color conversion layer (3) facing away from the chip body (1) is completely covered with a material protection layer (5).
8. The LED chip structure according to claim 7, wherein the material of the material protection layer (5) comprises SiO 2 、Al 2 O 3 Or Si 3 N 4 。
9. LED chip structure according to claim 5, characterized in that the thickness of the silicon dioxide cover layer (2) is 1-10 μm;
and/or the isolation matrix groove (21) is formed by adopting plasma etching on the silicon dioxide covering layer (2).
10. LED chip structure according to claim 5, characterized in that the color conversion material of the color conversion layer (3) is a quantum dot material.
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| CN202310112867.5A CN115832149A (en) | 2023-02-15 | 2023-02-15 | Manufacturing method of LED chip structure and LED chip structure |
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| US20220310877A1 (en) * | 2020-03-24 | 2022-09-29 | Boe Technology Group Co., Ltd. | Display substrate and preparation method thereof, and display panel and preparation method thereof |
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| US20220310877A1 (en) * | 2020-03-24 | 2022-09-29 | Boe Technology Group Co., Ltd. | Display substrate and preparation method thereof, and display panel and preparation method thereof |
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