CN115832141A - Display panel - Google Patents

Abstract

The invention discloses a display panel, which comprises a circuit substrate and a light-emitting unit. The light emitting unit includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode and two second type electrodes. The first type semiconductor layer comprises a connecting part, a first extending part and a second extending part, wherein the first extending part and the second extending part extend from the side edge of the connecting part. The light-emitting layer is arranged between the first type semiconductor layer and the circuit substrate and overlaps the first extension part and the second extension part. The second type semiconductor layer overlaps the first extension portion and the second extension portion. The first-type electrode is between the circuit substrate and the first-type semiconductor layer, and the first-type electrode and the connecting portion are overlapped and electrically connected to each other. The two second-type electrodes are respectively overlapped with the first extension part and the second extension part and are respectively electrically connected with two second-type semiconductor patterns which are structurally separated from each other in the second-type semiconductor layer.

Description

Display panel

Technical Field

The present invention relates to a display panel, and more particularly, to a display panel of micro light emitting diodes.

Background

The Micro Light Emitting Diode panel includes an active device substrate and a Micro Light Emitting Diode (Micro LED) on the active device substrate, and is electrically connected to a driving circuit layer in the active device substrate. The micro led panel has high brightness, high resolution, and high contrast, which makes it the focus of research and development of various manufacturers.

However, due to the small size of the micro-led, extremely high alignment accuracy is required when a Mass transfer (Mass transfer) is bonded to the active device substrate. This makes it difficult to increase the yield of the micro led panel. In addition, micro-leds are prone to optical crosstalk (crosstalk) between adjacent pixels, which is a challenge in the fabrication and popularity of micro-led panels.

Disclosure of Invention

The invention provides a display panel, which effectively solves the problem of mutual optical crosstalk between light-emitting diodes and has good transfer yield.

The display panel of the invention comprises a circuit substrate and a light-emitting unit, wherein the light-emitting unit is arranged on the circuit substrate. The light emitting unit includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode and two second type electrodes. The first type semiconductor layer has a connection portion, and a first extension portion and a second extension portion extending from a side of the connection portion. The light emitting layer is located between the first type semiconductor layer and the circuit substrate and is overlapped with the first extension portion and the second extension portion. The second type semiconductor layer is arranged between the light emitting layer and the circuit substrate and is overlapped with the first extension part and the second extension part. The first-type electrode is disposed between the circuit substrate and the first-type semiconductor layer, overlaps the connection portion, and is electrically connected to each other. The two second-type electrodes are arranged between the circuit substrate and the second-type semiconductor layer, wherein the two second-type electrodes are respectively overlapped with the first extension part and the second extension part and are respectively electrically connected with two second-type semiconductor patterns which are structurally separated from each other in the second-type semiconductor layer.

Based on the above, the light emitting unit of the invention uses the first type electrode as the common electrode, which increases the contact area of the first type electrode, reduces the required precision of alignment, further improves the production yield of the display panel manufactured subsequently, and reduces the production cost. In addition, the extension parts of the first type semiconductor layer are separated from each other, so that light emitted by the light emitting layer overlapped on the extension parts is difficult to be transmitted to the adjacent extension parts. Therefore, the extending parts are used as the sub-pixels of the display panel, and the problem that light rays emitted by the sub-pixels are mutually interfered can be effectively solved. And the light-emitting layer overlapped with the extension part can have a larger light-emitting area, so that the space utilization rate of the panel is increased, and the light-emitting layer is also more suitable for the color conversion panel.

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1A is a schematic top view of a display panel according to a first embodiment of the invention;

FIG. 1B is a schematic bottom view of the display panel of FIG. 1A;

FIG. 1C isbase:Sub>A schematic cross-sectional view of the display panel of FIG. 1A along section line A-A';

FIG. 1D is a schematic cross-sectional view of the display panel of FIG. 1A along section line B-B';

FIG. 2A is a schematic top view of a display panel according to a second embodiment of the present invention;

FIG. 2B is a schematic cross-sectional view of the display panel of FIG. 2A along section line C-C';

FIG. 2C is a schematic cross-sectional view of the display panel of FIG. 2A along section line D-D';

FIG. 3A is a schematic top view of a display panel according to a third embodiment of the present invention;

FIG. 3B is a schematic cross-sectional view of the display panel of FIG. 3A along section line E-E';

FIG. 3C is a schematic cross-sectional view of the display panel of FIG. 3A along cross-sectional line F-F';

FIG. 4A and FIG. 4B are schematic cross-sectional views of a display panel according to a fourth embodiment of the present invention;

fig. 5 is a schematic cross-sectional view of a display panel of a fifth embodiment of the present invention;

FIG. 6 is a schematic top view of a display panel according to a sixth embodiment of the present invention;

FIG. 7 is a schematic top view of a display panel according to a seventh embodiment of the present invention;

fig. 8 is a schematic top view of a display panel according to an eighth embodiment of the invention.

Description of the symbols

1. 2, 3, 4, 5, 6, 7, 8 display panel

10: circuit board

20 light-absorbing layer

30 reflective layer

40R, 40G, 40B wavelength conversion layer

100. 100a, 100b, 100c, 100d light emitting units

110 first type semiconductor layer

111a first extension

111aS1 first side

111aS2 second side

111aS3 third side

111b second extension

111c third extension

112 connecting part

112S1 first side

112S2 second side edge

112S3 third side edge

120 luminescent layer

120P luminous pattern

130 second type semiconductor layer

130P semiconductor pattern of the second type

140 electrodes of the first type

150 second type electrode

160 reflective layer

L is light

0P1, OP2, OP3 openings

A-A ', B-B', C-C ', D-D', E-E ', F-F': section line

Detailed Description

As used herein, "about," "approximately," "essentially," or "substantially" includes the average of the stated value and a specified value within an acceptable range of deviation from the stated value, as determined by one of ordinary skill in the art, given the particular number of measurements in question and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated values, or, for example, ± 30%, ± 20%, ± 15%, ± 10%, ± 5%. Further, as used herein, "about", "approximately", "essentially", or "substantially" may be selected based on the measured property, cleavage property, or other property to select a more acceptable range of deviation or standard deviation, and not one standard deviation may apply to all properties.

In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" can refer to physical and/or electrical connections. Furthermore, an "electrical connection" may be the presence of other elements between two elements.

Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.

Fig. 1A is a schematic top view of a display panel according to a first embodiment of the invention. Fig. 1B is a schematic bottom view of the display panel of fig. 1A. FIG. 1C isbase:Sub>A schematic cross-sectional view of the display panel of FIG. 1A along cross-sectional line A-A'. FIG. 1D is a schematic cross-sectional view of the display panel of FIG. 1A along cross-sectional line B-B'. For convenience of presentation, the number of the light emitting units 100 may be plural, and only one is schematically drawn here, and the present invention does not limit the number of the light emitting units 100.

Referring to fig. 1A to 1D, the display panel 1 includes a circuit substrate 10 and a light emitting unit 100, wherein the light emitting unit 100 is disposed on the circuit substrate 10. The light emitting unit 100 includes a first type semiconductor layer 110, a light emitting layer 120, a second type semiconductor layer 130, a first type electrode 140, and a plurality of second type electrodes 150. The first type semiconductor layer 110 includes a connection portion 112, and a first extension portion 111a, a second extension portion 111b and a third extension portion 111c extending from a first side 112S1 of the connection portion 112. The light emitting layer 120 overlaps the first extension portion 111a, the second extension portion 111b, and the third extension portion 111c. The second-type semiconductor layer 130 includes two second-type semiconductor patterns 130P separated from each other, and the light emitting layer 120 is positioned between the first-type semiconductor layer 110 and the second-type semiconductor patterns 130P. The first-type electrodes 140 overlap the connection parts 112 and are electrically connected to each other. The second type electrodes 150 respectively overlap the first extension portion 111a, the second extension portion 111b and the third extension portion 111c, and the second type electrodes 150 are respectively electrically connected to the second type semiconductor patterns 130P.

In the present embodiment, the circuit substrate 10 includes various signal lines (e.g., data lines, scan lines, or power supply lines). For example, a silicon wafer material is used and the driving substrate includes a Complementary Metal Oxide Semiconductor (CMOS), so as to increase the response speed of each switching element in the circuit substrate 10 and reduce the power consumption, so as to meet the requirements of fast response and high resolution of the display panel 1. However, the invention is not limited thereto. In other embodiments, the circuit substrate 10 may also be a Printed Circuit Board (PCB). In other embodiments, the circuit substrate 10 may also be a combination of a glass substrate and a pixel circuit layer, wherein the pixel circuit layer is formed on the glass substrate by using a semiconductor manufacturing process, and the pixel circuit layer may include active (active) devices (e.g., thin film transistors) and various signal lines (e.g., data lines, scan lines, or power lines), but is not limited thereto.

On the other hand, the light emitting unit 100 is, for example, a micro light emitting diode (micro LED), a sub-millimeter light emitting diode (mini LED), or other light emitting diodes with different sizes, which is not limited in the present invention. Preferably, the present embodiment employs micro light emitting diodes. The light emitting unit 100 may be an Ultraviolet (UV) light emitting diode or a blue light emitting diode. On the other hand, the light emitting unit 100 of the present embodiment is a flip-chip type light emitting diode. For example, the first-type electrode 140 and the second-type electrode 150 located on the same side of the epitaxial structure of the light emitting unit 100 are aligned with corresponding bonding pads (not shown) on the circuit substrate 10, and are bonded to each other by using the conventional Surface-mount technology (SMT) to electrically connect the light emitting unit 100 and the circuit substrate 10, but the invention is not limited thereto.

The first type semiconductor layer 110 may be an N type semiconductor layer, and the second type semiconductor layer 130 may be a P type semiconductor layer, but the present invention is not limited thereto. In addition, the first-type semiconductor layer 110 and the second-type semiconductor layer 130 may each include a multi-layer structure of high-concentration doped layers having different doping concentrations and a semiconductor layer having a normal doping concentration. For example, a portion of the connection part 112 contacting the first-type electrode 140 may include highly doped N ⁺ Gallium nitride (GaN) to facilitate ohmic contact between the first-type semiconductor layer 110 and the first-type electrode 140. Similarly, the portion of the second-type semiconductor layer 130 contacting the second-type electrode 150 may include highly doped P ⁺ A GaN layer to facilitate ohmic contact between the second-type semiconductor layer 130 and the second-type electrode 150. In other embodiments, other materials, such as gallium arsenide (GaAs), indium gallium arsenide (InGaN), aluminum gallium nitride (AlGaN), etc., can be used as the substrate of the first-type semiconductor layer 110 and the second-type semiconductor layer 130, which is not limited in this embodiment.

It should be noted that, in the present embodiment, the number of the extending portions is exemplarily illustrated by three, which does not mean that the present invention is limited thereto. In other embodiments, the number of the extending portions extending from the connecting portion 112 can be adjusted to two or more than four according to the actual application.

In addition, as shown in fig. 1B and 1C, the second-type semiconductor layer 130 may be a plurality of second-type semiconductor patterns 130P separated from each other in structure. Preferably, in the normal direction of the circuit substrate 10, the plurality of second-type semiconductor patterns 130P of the present embodiment may only overlap the first extension portion 111a, the second extension portion 111b, the third extension portion 111c, the second-type electrode 150 and the light emitting layer 120, respectively, and the light emitting layer 120 and the second-type semiconductor layer 130P do not overlap the connection portion 112.

In the present embodiment, the light emitting layer 120 can be divided into three light emitting patterns 120P, and the three light emitting patterns 120P are respectively disposed to overlap the first extension portion 111a, the second extension portion 111b and the third extension portion 111c. The structure of the light emitting layer 120 may be a Multiple-Quantum Well (MQW) structure, a single Quantum Well structure, a Double Heterostructure (Double Heterostructure), a single Heterostructure, or a combination thereof. The invention is not limited thereto. And as shown in fig. 1C and 1D, the plurality of light emitting patterns 120P are structurally separated from each other. Accordingly, the first-type semiconductor layer 110 serves to provide electrons and the second-type semiconductor patterns 130P serve to provide holes, so that the electrons and the holes are combined in each of the light emitting patterns 120P and convert energy into photons to emit light.

The first and second electrodes 140 and 150 may be gold (Au), silver (Ag), copper (Cu), germanium (GeAu), or other metals or alloys suitable for making ohmic contact (ohmic contact) with P-type and N-type semiconductors, and materials suitable for making connection with metal bonding pads (not shown) and bonding metals of the circuit substrate 10, which should not be construed as a limitation of the present invention.

Taking fig. 1C as an example, when the display panel 1 is enabled, the first type electrode 140 on the circuit substrate 10 can be selectively provided with a low potential or ground potential (ground), and the second type electrode 150 can be selectively provided with a high potential. Due to the potential difference generated between the first-type electrode 140 and the second-type electrode 150, the current can sequentially pass through the second-type semiconductor pattern 130P, the light emitting pattern 120P, the extension portion (e.g., the first extension portion 111a, the second extension portion 111b, or the third extension portion 111 c), the connection portion 112, and the first-type electrode 140 from the second-type electrode 150, so that the light emitting layer 120 can emit the light L.

In other words, the first-type electrode 140 of the present embodiment can be regarded as a common electrode. And the connection portion 112 of the first type semiconductor layer 110 may be regarded as a common semiconductor layer. The projection area of the three light-emitting patterns 120P of the light-emitting layer 120 (or the first extension portion 111a, the second extension portion 111b, and the third extension portion 111c of the first type semiconductor layer 110) on the circuit substrate 10 can be roughly regarded as the light-emitting area of the three sub-pixels of the display panel 1. That is, the light emitting unit 100 of the present embodiment can be regarded as an integrated structure having three light emitting elements, and the light emission of the three light emitting elements can be individually controlled.

Through the above design, the first type semiconductor layer 110 may have a larger area of the first type electrode 140, so as to effectively increase the bonding area between the first type electrode 140 and the circuit substrate 10, reduce the requirement for alignment accuracy when the light emitting unit 100 is transferred to the circuit substrate 10, increase the success rate when the light emitting unit 100 is transferred in a large amount, and further increase the manufacturing yield of the display panel 1.

Please refer to fig. 1C and 1D, however. The extending directions (e.g., the direction X) of the first extending portion 111a and the second extending portion 111b are substantially the same. More specifically, the extending directions of the first extending portion 111a and the second extending portion 111b of the present embodiment are parallel to each other. The extending direction of the first extending portion 111a and the second extending portion 111b is different from the extending direction (for example, direction Y) of the connecting portion 112. More specifically, on the plane of the display panel 1, the extending directions of the first extending portion 111a and the second extending portion 111b of the present embodiment are perpendicular to the extending direction of the connecting portion 112. Accordingly, the first extension portion 111a, the second extension portion 111b and the third extension portion 111c are structurally separated from each other and are connected only by the side 112S1 of the connection portion 112. Therefore, the light L emitted from the light-emitting pattern 120P overlapped with the first extension portion 111a is difficult to be transmitted to the adjacent second extension portion 111b through the connection portion 112. The light L emitted by the light-emitting pattern 120P overlapped with the second extension portion 111b is also difficult to be transmitted to the adjacent first extension portion 111a and the third extension portion 111c through the connecting portion 112. The light L emitted by the light emitting pattern 120P overlapped with the third extending portion 111c is difficult to be transmitted to the adjacent second extending portion 111b through the connecting portion 112.

Accordingly, the light L emitted by each light emitting pattern 120P of the light emitting layer 120 is only transmitted and emitted through the extension portion of the overlapped first type semiconductor layer 110, and is not transmitted to another extension portion separated from the structure. Therefore, the problem of crosstalk of light emission among the three light emitting elements of the light emitting unit 100 can be effectively suppressed, which is helpful for improving the display resolution and the forward light emission amount of the display panel 1.

Furthermore, since the light emitting pattern 120P overlaps the first extension portion 111a, the second extension portion 111b and the third extension portion 111c, the light emitting pattern 120P may also extend along the extension direction of each extension portion, thereby increasing the light emitting area of the light emitting layer 120 and increasing the space utilization of the display panel 1.

On the other hand, the first-type electrode 140 of the present embodiment may further extend to the first extension portion 111a, the second extension portion 111b, and the third extension portion 111c. And the first-type electrode 140 overlaps a portion of the light-emitting layer 120 and the second-type semiconductor layer 130. For example, as shown in fig. 1B and 1C, the first-type electrode 140 may contact and overlap the second-type semiconductor pattern 130P. Specifically, in order to prevent the current from directly flowing from the second-type electrode 150 to the first-type electrode 140 through the second-type semiconductor layer 130 without passing through the light-emitting layer 120, an insulating layer (not shown) is further disposed between the first-type electrode 140 and the stacked structure of the light-emitting layer 120 and the second-type semiconductor layer 130.

Since the first-type electrode 140 is made of a metal material with high reflectivity, the light L emitted from the light-emitting layer 120 toward the circuit substrate 10 by the above design can be reflected by the first-type electrode 140 and the second-type electrode 150 back toward the normal direction of the circuit substrate 10 (e.g., the direction Z in fig. 1A to 1D), which is beneficial to increasing the forward light emission of the light-emitting unit 100. It should be noted that a proper distance (e.g., greater than 2 μm) is required between the first type electrode 140 and the second type electrode 150 to avoid short circuit caused by the close distance between the first type electrode 140 and the second type electrode 150 when the light emitting cell 100 is bonded to the circuit substrate 10.

The present invention will be described in detail below with reference to other embodiments, wherein like components are denoted by like reference numerals, and descriptions of the same technical contents are omitted, and reference is made to the foregoing embodiments for omitting details.

Fig. 2A is a schematic top view of a display panel according to a second embodiment of the invention. FIG. 2B is a schematic cross-sectional view of the display panel of FIG. 2A along cross-sectional line C-C'. FIG. 2C is a schematic cross-sectional view of the display panel of FIG. 2A along cross-sectional line D-D'. Referring to fig. 2A, the display panel 2 of the present embodiment is similar to the display panel 1, and the difference is: in the display panel 2 of the present embodiment, the reflective layer 160 is provided on both opposite sides of the first extension portion 111a, the second extension portion 111b, and the third extension portion 111c of the first-type semiconductor layer 110 of the light-emitting unit 100a in the extending direction (for example, the direction opposite to the direction X in fig. 2A).

In detail, the reflective layer 160 is, for example, a white paint or a metal mirror coating. In addition, the extending portions of the first type semiconductor layer 110 and the side edges of the connecting portion 112 may be surrounded by the reflective layer 160. Taking the first extending portion 111a aS an example, the reflective layer 160 may be disposed on the first side surface 111aS1, the second side surface 111aS2, and the third side surface 111aS3 of the first extending portion 111 a. Accordingly, the light L emitted by the light emitting pattern 120P leaks from the side surfaces of the extending portions (e.g., the first side surface 111aS1, the second side surface 111aS2, and the third side surface 111aS3 of the first extending portion 111 a). The reflective layer 160 may be disposed on three side surfaces of the connection portion 112, which are located on the first side 112S1, the second side 112S2, and the third side 112S3. That is, in the extending direction of the first extending portion 111a and the second extending portion 111b (for example, the direction X in fig. 2A) of the first type semiconductor layer 110 of the light emitting unit 100a, the first extending portion 111a is away from the third side 111aS3 of the connection portion 112, and the connection portion 112 is away from the second side 112S2 of the first extending portion 111a, and two opposite sides are provided with the reflective layer 160. The light emitting efficiency of the light emitting unit 100a is further increased, and light L is effectively reduced from leaking from three sides of the first side 112S1, the second side 112S2 and the third side 112S3 of the connecting portion 112.

Furthermore, the manufacturing process of the reflective layer 160 can be formed by sputtering, evaporation, or the like, or by the existing physical vapor deposition or chemical vapor deposition, which is not limited by the invention.

Fig. 3A is a schematic top view of a display panel according to a third embodiment of the invention. FIG. 3B is a schematic cross-sectional view of the display panel of FIG. 3A along section line E-E'. FIG. 3C is a cross-sectional view of the display panel of FIG. 3A along cross-section line F-F'. Referring to fig. 3A, the display panel 3 of the present embodiment is similar to the display panel 1, and the difference is: in the display panel 3 of the present embodiment, the light absorbing layers 20 are provided on both opposite sides of the first extending portion 111a, the second extending portion 111b, and the third extending portion 111c of the light emitting unit 100 in the extending direction (for example, the direction opposite to the direction X in fig. 2A).

In detail, the light absorbing layer 20 may be a Black Matrix (BM). In addition, each of the extending portions of the first-type semiconductor layer 110 and the side of the connection portion 112 may be surrounded by the light absorbing layer 20. Taking the first extending portion 111a aS an example, the light absorbing layer 20 may be disposed on the first side surface 111aS1, the second side surface 111aS2, and the third side surface 111aS3 of the first extending portion 111 a. Accordingly, light leakage from the side edges of the extending portions (e.g., the first side surface 111aS1, the second side surface 111aS2, and the third side surface 111aS3 of the first extending portion 111 a) can be absorbed by the light absorbing layer 20. The light absorbing layer 20 may also be disposed on the first, second, and third sides 112S1, 112S2, 112S3 of the connection portion 112. That is, the first-type semiconductor layer 110 of the light emitting unit 100 is provided with the light absorbing layer 20 on the opposite third side 111aS3 and the side of the second side 112S2 in the extending direction (e.g., the reverse direction of the direction X of fig. 3A) of the first extending portion 111a and the second extending portion 111b. The light leakage from the three sides of the first side 112S1, the second side 112S2 and the third side 112S3 of the connecting portion 112 can be effectively reduced, and the contrast of the display image of the display panel 3 can be increased. On the other hand, the light-absorbing layer 20 covers the light-emitting units 100 of the present embodiment, and can be used to shield active devices (such as thin film transistors) on the circuit substrate 10, so as to prevent the active devices from being degraded due to the light emitted by the light-emitting units 100.

Fig. 4A and 4B are schematic cross-sectional views of a display panel according to a fourth embodiment of the invention. In the present embodiment, the top view of the display panel 4 is similar to the top view of the display panel 3 in fig. 3A, so the description of the same components and the relative positions and connection relationships of the components can refer to the illustration in fig. 3A. Referring to fig. 4A and 4B, the difference between the display panel 4 and the display panel 3 is that in the present embodiment, the display panel 4 replaces the light absorbing layer 20 in fig. 3A and 3B with the reflective layer 30. Therefore, the reflective layer 30 also extends to at least one side of the light emitting layer 120 and the second type semiconductor layer 130.

Referring to fig. 3A and fig. 4A, the reflective layer 30 is, for example, a barrier structure made of a high-reflectivity material. The reflective layer 30 may be disposed around each of the extending portions of the first-type semiconductor layer 110 and the side surface of the connection portion 112. Taking the first extending portion 111a aS an example, the reflective layer 30 may be disposed on the first side surface 111aS1, the second side surface 111aS2, and the third side surface 111aS3 of the first extending portion 111 a. Accordingly, light rays transmitted toward the side surfaces of the extension portions (e.g., the first side surface 111aS1, the second side surface 111aS2, and the third side surface 111aS3 of the first extension portion 111 a) are all reflected. In addition, referring to the top view of the display panel 3 in the embodiment of fig. 3A, the reflective layer 30 may also be disposed on three side surfaces of the first side 112S1, the second side 112S2 and the third side 112S3 of the connection portion 112 to further increase the light emitting efficiency of the light emitting unit 100a, and effectively reduce light leakage from the three side surfaces of the first side 112S1, the second side 112S2 and the third side 112S3 of the connection portion 112. The reflective layer 30 can achieve the technical effect of the reflective layer 160 in fig. 2B, and the light transmitted toward the side surfaces of the light-emitting pattern 120P and the second-type semiconductor layer 130 of each light-emitting device can also be reflected by the reflective layer 30 to be emitted from the light-emitting surface (for example) of the corresponding light-emitting device. The overall light output amount can be increased, and the light emitting unit 100 can concentrate light output toward the normal direction (for example, the direction Z in fig. 4A and 4B) of the vertical circuit substrate 10.

Fig. 5 is a schematic cross-sectional view of a display panel according to a fifth embodiment of the present invention. The display panel 5 of the present embodiment is similar to the display panel 4, and the difference is: the display panel 5 further includes a light absorbing layer 20 disposed on the light emitting unit 100, wherein the light absorbing layer 20 includes an opening OP1, an opening OP2 and an opening OP3 respectively overlapping the first extending portion 111a, the second extending portion 111b and the third extending portion 111c. And a wavelength conversion layer 40R, a wavelength conversion layer 40G, and a wavelength conversion layer 40B filled in the opening OP1, the opening OP2, and the opening OP3, respectively.

In detail, the light emitting unit 100 of the display panel 5 is disposed between the light absorbing layer 20 and the circuit substrate 10. In some embodiments, the light emitting unit 100 is, for example, a blue or ultraviolet light emitting diode, the wavelength conversion layer 40R may be a wavelength conversion material that converts blue or ultraviolet light into red light, the wavelength conversion layer 40G may be a wavelength conversion material that converts blue or ultraviolet light into green light, and the wavelength conversion layer 40B may be a wavelength conversion material that converts ultraviolet light into blue light. In some embodiments, the light emitting unit 100 may be a blue light emitting diode, the wavelength conversion layer 40R may be a wavelength conversion material that converts blue light into red light, the wavelength conversion layer 40G may be a wavelength conversion material that converts blue light into green light, and one of the openings (e.g., the opening OP 3) may not be filled with the wavelength conversion material. The light wavelength conversion material with various colors can be an existing fluorescent powder material, a filter layer or a quantum dot structure, and the invention is not limited thereto.

On the other hand, in other embodiments, the reflective layer 30 may be replaced by the same material as the light absorbing layer 20 to simplify the manufacturing process of the display panel 5. The light absorbing layer 20 can be disposed in a manner and with advantages similar to those of the previous embodiments, and will not be described herein.

The wavelength conversion layer 40R, the wavelength conversion layer 40G and the wavelength conversion layer 40B respectively overlap the first extension portion 111a, the second extension portion 111B and the third extension portion 111c of the light emitting unit 100, so that the display panel 5 of the present embodiment can be a color conversion panel for emitting color light. Since the light emitting unit 100 of the present invention can effectively suppress optical crosstalk, the light L emitted by each of the light emitting patterns 120P respectively overlapped on the wavelength conversion layer 40R, the wavelength conversion layer 40G and the wavelength conversion layer 40B will not be transmitted to the adjacent other light emitting layers 120, and other adjacent wavelength conversion layers will not be excited, so as to have better resolution and brightness. The above advantages are applied to near-to-eye display devices such as Augmented Reality (AR), virtual Reality (VR), or Mixed Reality (MR), which can achieve better display effect and improve the viewing experience of users.

Fig. 6 is a schematic top view of a display panel according to a sixth embodiment of the invention. Referring to fig. 6, the display panel 6 of the present embodiment is similar to the display panel 1, and the difference is: the extending directions of the extending portions of the light emitting units 100b are different.

In detail, the connecting portion 112 of the light emitting unit 100b has a first side 112S1 and a second side 112S2 opposite to each other, the first extending portion 111a and the second extending portion 111b extend from the second side 112S2 and the first side 112S1 opposite to each other, and the first extending portion 111a and the second extending portion 111b are parallel to each other. In addition, those skilled in the art can adjust the extending directions of the first extending portion 111a, the second extending portion 111b and the third extending portion 111c according to the actual design requirement of the sub-pixel, and the invention is not limited thereto. Since other elements of the light emitting unit 100b of the present embodiment are arranged in a manner and have advantages similar to those of the light emitting units of the previous embodiments, the detailed description can refer to the related paragraphs of the previous embodiments and will not be repeated herein.

Fig. 7 is a schematic top view of a display panel according to a seventh embodiment of the invention. Referring to fig. 7, the display panel 7 of the present embodiment is similar to the display panel 1, and the difference is: the extending directions of the extending portions of the light emitting unit 100c are different.

In detail, the connecting portion 112 of the light emitting unit 100c includes a first side 112S1, a second side 112S2 and a third side 112S3, the first side 112S1 and the second side 112S2 are opposite to each other, the third side 112S3 connects the first side 112S1 and the second side 112S2, and the first extension portion 111a, the second extension portion 111b and the third extension portion 111c respectively extend from the first side 112S1, the second side 112S2 and the third side 112S3. The extending direction of the first extending portion 111a (e.g., the direction X in fig. 7) and the extending direction of the second extending portion 111b (e.g., the direction X in fig. 7) may be parallel to each other, the extending direction of the third extending portion 111c may be parallel to the extending direction of the connecting portion 112 (e.g., the direction Y in fig. 7), and the direction X and the direction Y may be perpendicular to each other, which is not limited by the invention. Since other elements of the light emitting unit 100c of the present embodiment are arranged in a manner and have advantages similar to those of the light emitting units of the previous embodiments, the detailed description can refer to the related paragraphs of the previous embodiments and will not be repeated herein.

Fig. 8 is a schematic top view of a display panel according to an eighth embodiment of the invention. Referring to fig. 8, the display panel 8 of the present embodiment is similar to the display panel 1, and the difference is: the extending directions of the extending portions of the light emitting unit 100d are different.

In detail, the first extension 111a and the third extension 111c of the light emitting unit 100d both extend from the second side 112S2 of the connecting portion 112, and the second extension 111b extends from the first side 112S1 of the connecting portion 112. The first extension portion 111a and the third extension portion 111c are parallel to each other. Those skilled in the art can adjust the extending directions of the first extending portion 111a, the second extending portion 111b and the third extending portion 111c according to the actual design requirement of the sub-pixel, and the invention is not limited thereto. Since the arrangement and advantages of other elements of the light emitting unit 100d of the present embodiment are similar to those of the light emitting units of the previous embodiments, the detailed description can refer to the related paragraphs of the previous embodiments, and will not be repeated herein.

In summary, the light emitting unit of the present invention uses the first type electrode as the common electrode, so as to increase the contact area of the first type electrode, reduce the required precision of alignment, further improve the production yield of the display panel manufactured subsequently, and reduce the production cost. In addition, the extension parts of the first type semiconductor layer are separated from each other, so that light emitted by the light emitting layer overlapped on the extension parts is difficult to be transmitted to the adjacent extension parts. Therefore, the extending parts are used as the sub-pixels of the display panel, and the problem that light rays emitted by the sub-pixels are mutually interfered can be effectively solved. And the light-emitting layer overlapped with the extension part can have a larger light-emitting area, so that the space utilization rate of the panel is increased, and the light-emitting layer is also more suitable for the color conversion panel.

Although the present invention has been described in connection with the above embodiments, it is not intended to limit the present invention, and those skilled in the art may make modifications and alterations without departing from the spirit and scope of the present invention, so that the scope of the present invention should be determined by that of the appended claims.

Claims (11)

1. A display panel, comprising:

a circuit substrate; and

a light emitting unit disposed on the circuit substrate, the light emitting unit including:

the first type semiconductor layer is provided with a connecting part, a first extending part and a second extending part, wherein the first extending part and the second extending part extend from at least one side edge of the connecting part;

a light emitting layer located between the first type semiconductor layer and the circuit substrate, the light emitting layer overlapping the first extension portion and the second extension portion;

a second type semiconductor layer disposed between the light emitting layer and the circuit substrate and overlapping the first extension portion and the second extension portion;

a first type electrode disposed between the circuit substrate and the first type semiconductor layer, the first type electrode overlapping the connection portion and electrically connected to each other; and

two second type electrodes disposed between the circuit substrate and the second type semiconductor layer, wherein the two second type electrodes overlap the first extension portion and the second extension portion respectively and are electrically connected to two second type semiconductor patterns structurally separated from each other in the second type semiconductor layer respectively.

2. The display panel of claim 1, wherein the first-type electrode further extends to the first extension and the second extension and overlaps a portion of the light emitting layer and a portion of the second-type semiconductor layer.

3. The display panel according to claim 1, wherein the first type semiconductor layer is provided with a reflective layer on opposite sides in an extending direction of the first extending portion and the second extending portion.

4. The display panel of claim 3, wherein the reflective layer further extends to at least one side of the light-emitting layer and the second-type semiconductor layer.

5. The display panel of claim 3, further comprising:

a light absorbing layer disposed on the light emitting unit, wherein the light absorbing layer includes two openings respectively overlapping the first extension portion and the second extension portion; and

and the wavelength conversion layer is filled in the two openings.

6. The display panel of claim 1, wherein the first type semiconductor layer is provided with light absorbing layers on opposite sides in an extending direction of the first extending portion and the second extending portion.

7. The display panel of claim 1, wherein the light emitting layer and the second type semiconductor layer do not overlap the connection portion.

8. The display panel of claim 1, wherein the first extension portion and the second extension portion extend from a same side of the at least one side of the connecting portion, and the first extension portion and the second extension portion are parallel to each other.

9. The display panel according to claim 1, wherein the at least one side edge includes two opposite side edges, the first extending portion and the second extending portion respectively extend from the two side edges, and the first extending portion and the second extending portion are parallel to each other.

10. The display panel of claim 1, wherein the first type semiconductor layer further comprises a third extending portion, the at least one side of the connecting portion comprises a first side, a second side and a third side, the first side and the second side are opposite to each other, the third side connects the first side and the second side, and the first extending portion, the second extending portion and the third extending portion respectively extend from the first side, the second side and the third side.

11. The display panel of claim 1, wherein the extending direction of the first extending portion and the second extending portion is perpendicular to the extending direction of the connecting portion.

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