CN115832120A - Transferring method and packaging method of huge micro light-emitting chips and light-emitting module - Google Patents

Abstract

The application provides a transfer method and a packaging method of a huge number of micro light-emitting chips and a light-emitting module. The transfer method comprises the steps of determining the classification of the micro light-emitting chips and placing the micro light-emitting chips after the classification on the surface of a corresponding transfer carrier plate; laying an auxiliary transfer layer on the transfer carrier plate on which the micro light-emitting chips are placed; wherein the height of the auxiliary transfer layer is lower than the surface of the micro light-emitting chip; etching to remove the auxiliary transfer layer at the target position in the transfer carrier plate, and forming a convex protection structure with a preset shape and wrapping the micro light-emitting chip; and transferring the plurality of classified convex protection structures to a target carrier plate according to a preset arrangement mode. The mass transfer method has the characteristics of high consistency and high repeatability, improves the transfer efficiency and reduces the cost.

Description

Transferring method and packaging method of huge micro light-emitting chips and light-emitting module

Technical Field

The present application relates to the field of mass transfer of LED chips, and more particularly, to a method for transferring and packaging a mass micro light emitting chip, and a light emitting module.

Background

With the development of the LED display screen towards the ultra high definition display direction, micro LEDs (Micro light emitting diodes) gradually become a major trend of the future LED display industry by virtue of their extremely superior ultra high definition display effect. Currently, the size of Micro LED chips has been developed to the hundreds of micrometers or less. Typical conventional LED chips are larger than 200 μm, while Micro LED chips are more scaled down to less than 50 μm. Taking a 4K screen as an example, the number of micron chips to be transferred is as high as 2400 or more ten thousand (calculated by 3840x2160xRGB three colors), and even if 1 ten thousand chips are transferred at a time, 2400 times of operations are required.

Taking a traditional chip transfer mode as an example, the size requirement of the equipment on a single chip has a certain physical limit, and the chip is too small to be transferred, so that the requirement of future Micro LED Micro chips is difficult to meet; in addition, a mechanical arm has a certain time limit in the moving process of transferring a single chip, and the transferring efficiency is difficult to further improve, which means that the traditional packaging and chip transferring technology gradually faces the ceiling.

The mass transfer technology moves a large number of micro-scale LED chips onto a target substrate and a PCB (printed circuit board) accurately and efficiently by using a high-precision device, but for the mass transfer technology, seven major factors, such as device precision, process yield, process time, process technology, detection method, repeatability, and processing cost, are factors that must be considered for mass transfer. The most concerned difficulty is how to increase the transfer yield to 99.9999% (commonly called "six nine", meaning that only one bad chip can be transferred per million chips), and the accuracy of each chip must be controlled within ± 0.5 μm. In short, the most significant difficulty in mass transfer is how to transfer the LED chips with different light emission colors to the target substrate and PCB "quickly and accurately".

Disclosure of Invention

In view of the above problems, the present application is proposed to provide a transfer method, a packaging method and a light emitting module of a huge micro light emitting chip, which overcome the above problems or at least partially solve the above problems, comprising:

a transfer method of a huge amount of micro light-emitting chips is applied to packaging the huge amount of micro light-emitting chips of different types in a preset mode, and comprises the following steps:

determining the classification of the micro light-emitting chips, and placing the micro light-emitting chips after the classification on the surface of the corresponding transfer carrier plate;

laying an auxiliary transfer layer on the transfer carrier plate on which the micro light-emitting chips are placed; wherein the height of the auxiliary transfer layer is lower than the surface of the micro light-emitting chip;

etching to remove the auxiliary transfer layer at the target position in the transfer carrier plate, and forming a convex protection structure with a preset shape and wrapping the micro light-emitting chip;

and transferring the plurality of classified convex protection structures to a target carrier plate according to a preset arrangement mode.

Preferably, the step of removing the auxiliary transfer layer at the target position in the transfer carrier by etching to form a convex protection structure with a preset shape and wrapping the micro light-emitting chip includes:

coating a photosensitive material on the surface of the auxiliary transfer layer, and carrying out exposure and development to expose the target part of the auxiliary transfer layer;

etching and removing the target part to form a convex protection structure with a preset shape and wrapping the micro light-emitting chip;

and removing the photosensitive material.

Preferably, the step of coating a photosensitive material on the surface of the auxiliary transfer layer, and exposing and developing to expose the target portion of the auxiliary transfer layer includes:

coating a photosensitive material on the surface of the auxiliary transfer layer to form a photosensitive mask layer and exposing to form the target part;

and removing the photosensitive mask layer at the corresponding position through development to expose the target part.

Preferably, the step of removing the auxiliary transfer layer at the target position in the transfer carrier by etching to form a convex protection structure with a preset shape and wrapping the micro light-emitting chip includes:

and etching and removing the auxiliary transfer layer at the target part in the transfer carrier plate through chemical metal corrosion to form a convex protection structure which is in a preset shape and wraps the micro light-emitting chip.

Preferably, the step of determining the classification of the micro light-emitting chips and placing the micro light-emitting chips after determining the classification on the surface of the corresponding transfer carrier includes:

classifying the micro light-emitting chips according to the light-emitting colors, and placing the classified micro light-emitting chips on the surfaces of the corresponding transfer carrier plates;

or;

classifying the micro light-emitting chips according to the sizes of the chips, and placing the classified micro light-emitting chips on the surfaces of the corresponding transfer carrier plates;

or;

and classifying prime number micro light-emitting chips according to the chip types, and placing the classified micro light-emitting chips on the surfaces of corresponding transfer carrier plates.

Preferably, the step of transferring the plurality of classified convex protection structures to the target carrier according to a preset arrangement manner includes:

and transferring the convex protection structure of one micro light-emitting chip to the surface of the transfer carrier plate of the other micro light-emitting chip, and removing the transfer carrier plate of one micro light-emitting chip until the convex protection structure of the micro light-emitting chip is completely transferred to the target carrier plate.

Preferably, the step of transferring the convex protection structure of one micro light emitting chip to the transfer carrier of another micro light emitting chip includes:

transferring the convex protection structure of the micro light-emitting chip to a preset distance of the convex protection structure of another micro light-emitting chip; wherein the preset distance is 2 to 200 micrometers.

Preferably, the material of the auxiliary transfer layer is one or more of epoxy resin, silica gel and mixed gel.

Preferably, the material of the transfer carrier plate comprises glass, mylar or plastic.

A packaging method of a huge micro light-emitting chip relates to the transfer method of the huge micro light-emitting chip, and comprises the following steps:

and etching to remove the auxiliary transfer layer on the target carrier plate, and performing glue filling and packaging on the target carrier plate to obtain the light-emitting module.

A light-emitting module prepared according to the packaging method of the huge micro light-emitting chip comprises the following steps: the packaging adhesive layer, the target carrier plate and the micro light-emitting chip are arranged;

the micro light-emitting chips are arranged on the surface of the target carrier plate in an array manner; the packaging adhesive layer is adhered to the surface of the target carrier plate and wraps the micro light-emitting chip.

The application has the following advantages:

in the embodiment of the application, the classification of the micro light-emitting chips is determined, and the micro light-emitting chips after the classification are determined are placed on the surface of the corresponding transfer carrier plate; laying an auxiliary transfer layer on the transfer carrier plate on which the micro light-emitting chips are placed; wherein the height of the auxiliary transfer layer is lower than the surface of the micro light-emitting chip; etching to remove the auxiliary transfer layer at the target position in the transfer carrier plate, and forming a convex protection structure with a preset shape and wrapping the micro light-emitting chip; and transferring the plurality of classified convex protection structures to a target carrier plate according to a preset arrangement mode. The mass transfer method has the characteristics of high consistency and high repeatability, improves the transfer efficiency and reduces the cost.

Drawings

In order to more clearly illustrate the technical solutions of the present application, the drawings needed to be used in the description of the present application will be briefly introduced below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.

FIG. 1 is a flowchart illustrating steps of a method for transferring a bulk micro light-emitting chip according to an embodiment of the present disclosure;

FIG. 2 is a flowchart illustrating another step of a method for transferring a huge number of micro light-emitting chips according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of a light emitting module according to an embodiment of the invention.

The reference numbers in the drawings of the specification are as follows:

1. a carrier plate; 2. a micro light emitting chip; 3. an auxiliary transfer layer; 4. and a convex protection structure.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that, in any embodiment of the present invention, the Micro light emitting chip 2 is a Micro LED chip (Micro light emitting diode) which has the characteristics of small size, high integration level and self-luminescence, and the Micro LED display technology is a display technology in which a self-luminescence micrometer-level LED is used as a light emitting pixel unit and is assembled on a driving panel to form a high-density LED array. The heart of the Micro LED chip is a semiconductor wafer, one end of the wafer is attached to a support, the other end of the wafer is a negative electrode, the other end of the wafer is connected with a positive electrode of a power supply, and the main material of the chip is monocrystalline silicon. The semiconductor wafer is composed of two parts, one of which is a P-type semiconductor in which holes predominate and the other of which is an N-type semiconductor in which electrons predominate. When the two semiconductors are connected, a P-N junction is formed between them. When a current is applied to the wafer through the wire, electrons are pushed to the P region where they recombine with holes and then emit energy in the form of photons, which is the principle of LED emission. The wavelength of the light, i.e., the color of the light, is determined by the material forming the P-N junction.

Referring to fig. 1-2, a method for transferring a huge number of micro light-emitting chips is shown, which is provided in an embodiment of the present application, and is used for packaging the micro light-emitting chips 2 onto a same carrier to obtain micro LED chips;

the method comprises the following steps:

s110, determining the classification of the micro light-emitting chips 2, and placing the micro light-emitting chips 2 after determining the classification on the surfaces of the corresponding transfer carrier plates 1;

s120, laying an auxiliary transfer layer 3 on the transfer carrier plate 1 with the micro light-emitting chips 2; wherein, the height of the auxiliary transfer layer 3 is lower than the surface of the micro light-emitting chip 2;

s130, etching and removing the auxiliary transfer layer 3 at the target position in the transfer carrier plate 1 to form a convex protection structure 4 which is in a preset shape and wraps the micro light-emitting chip 2;

and S140, transferring the plurality of classified convex protection structures 4 to the target carrier plate 1 according to a preset arrangement mode.

In the embodiment of the present application, the classification of the micro light emitting chips 2 is determined, and the micro light emitting chips 2 after the classification is determined are placed on the surface of the corresponding transfer carrier 1; laying an auxiliary transfer layer 3 on the transfer carrier plate 1 on which the micro light-emitting chips 2 are placed; wherein, the height of the auxiliary transfer layer 3 is lower than the surface of the micro light-emitting chip 2; etching to remove the auxiliary transfer layer 3 at the target position in the transfer carrier plate 1, and forming a convex protection structure 4 with a preset shape and wrapping the micro light-emitting chip 2; and transferring the plurality of classified convex protection structures 4 to the target carrier plate 1 according to a preset arrangement mode. The mass transfer method has the characteristics of high consistency and high repeatability, improves the transfer efficiency and reduces the cost.

Next, a transfer method of a huge micro light emitting chip in the present exemplary embodiment will be further described.

As stated in step S110, the classification of the micro light emitting chips 2 is determined, and the micro light emitting chips 2 after the classification are placed on the surface of the corresponding transfer carrier 1.

In an embodiment of the invention, the specific process of "determining the classification of the micro light-emitting chips 2 and placing the micro light-emitting chips 2 determined to be classified on the surface of the corresponding transfer carrier 1" in step S110 can be further described with reference to the following description.

It should be noted that the micro light-emitting chips 2 may be classified according to their colors, sizes or models.

As an example, the micro light emitting chips 2 are classified according to the light emitting colors, and the classified micro light emitting chips 2 are placed on the surface of the corresponding transfer carrier 1; specifically, if the micro light-emitting chips 2 are red, green and blue three-primary-color light-emitting chips, the micro light-emitting chips 2 of three colors are respectively horizontally placed on the surfaces of three transfer carrier plates 1, and the micro light-emitting chips 2 on the surface of the same transfer carrier plate 1 form an array;

or;

classifying the micro light-emitting chips 2 according to the chip sizes, and placing the classified micro light-emitting chips 2 on the corresponding transfer carrier plates 1; specifically, assuming that the micro light emitting chips 2 are divided into three sizes, namely, a large size, a medium size and a small size, the micro light emitting chips 2 with the three sizes are respectively and horizontally placed on the surfaces of three transfer carriers 1, and the micro light emitting chips 2 on the surface of the same transfer carrier 1 form an array;

or;

classifying the micro light-emitting chips 2 according to the chip types, and placing the classified micro light-emitting chips 2 on the corresponding transfer carrier plates 1; specifically, if the micro light emitting chips 2 are classified into four types according to the types, the four types of micro light emitting chips 2 are respectively horizontally placed on the surfaces of four transfer carrier plates 1, and the micro light emitting chips 2 on the surface of the same transfer carrier plate 1 form an array.

In this embodiment, the micro light emitting chips 2 with the same model but different light emitting colors may be classified, or the micro light emitting chips 2 with the same color but different sizes may be classified, specifically, the micro light emitting chips may be classified individually according to color, size, or model, or may be classified by mixing color, size, and model, and specifically, the micro light emitting chips may be set according to actual requirements, which is not specifically limited in this application.

As an example, according to a determined classification, a plurality of micro light emitting chips 2 are respectively placed on the surface of the corresponding transfer carrier 1 to form an array of micro light emitting chips 2. The transfer carrier 1 is used for primarily fixing the array of micro light emitting chips 2, and in the subsequent steps, the transfer carrier can be removed by tearing or other actions. The structure of the micro light-emitting chip 2 can be a same-side electrode structure, namely, the P-type electrode and the N-type electrode are positioned on the same side of the substrate; it is also possible to have a vertical electrode structure, i.e., the P-type electrode and the N-type electrode are located on different sides of the substrate, which is not particularly limited in this application.

As stated in step S120, laying an auxiliary transfer layer 3 on the transfer carrier 1 on which the micro light emitting chips 2 are placed; wherein, the height of the auxiliary transfer layer 3 is lower than the surface of the micro light-emitting chip 2.

In an embodiment of the present invention, the step S120 of "laying the auxiliary transfer layer 3 on the transfer carrier 1 on which the micro light emitting chips 2 are placed" can be further explained with reference to the following description; wherein, the height of the auxiliary transfer layer 3 is lower than the specific process of the surface' of the micro light-emitting chip 2.

As an example, a plurality of micro light emitting chips 2 are horizontally placed on the surface of the transfer carrier tape 1, and an auxiliary transfer layer 3 is formed on the surface of the transfer carrier tape 1 by Sputtering (Sputtering) so that the auxiliary transfer layer 3 is wrapped around the transfer carrier tape 1, and the top of the auxiliary transfer layer 3 extends to a position lower than the electrode surface of the micro light emitting chips 2. The auxiliary transfer Layer 3 is usually composed of two metal films, the first Layer is a titanium or titanium tungsten metal film as an adhesive/Yang Zhangceng (adhesive/barker Layer), which is used for providing good Adhesion force and low contact resistance between the aluminum pad and the gold bump of the Micro LED chip and preventing diffusion reaction between the aluminum pad and the bump material. The second layer is thin gold, which can be used as a conductive layer during electroplating, besides having an anti-oxidation protection effect.

As an example, the material of the auxiliary transfer layer 3 includes one or more of epoxy resin, silica gel and mixed gel, and a metal conductive layer is formed on the surface of the auxiliary transfer layer to make it have better conductivity.

In step S130, the auxiliary transfer layer 3 at the target position in the transfer carrier 1 is removed by etching, so as to form a convex protection structure 4 with a preset shape and wrapping the micro light emitting chip 2.

In an embodiment of the invention, a specific process of etching and removing the auxiliary transfer layer 3 at the target portion of the transfer carrier 1 to form the convex protection structure 4 of the predetermined shape and wrap the micro light emitting chip 2 in step S130 can be further described with reference to the following description.

As described in the following steps, a photosensitive material is applied to the surface of the auxiliary transfer layer 3, and exposure and development are performed to expose the target portion of the auxiliary transfer layer 3.

In an embodiment of the present invention, a specific process of "coating a photosensitive material on the surface of the auxiliary transfer layer 3, and performing exposure and development to expose the target portion of the auxiliary transfer layer 3" may be further described in conjunction with the following description.

In this embodiment, a photosensitive material is coated on the surface of the auxiliary transfer layer 3 to form a photosensitive mask layer, and exposure is performed to form the target portion; and removing the photosensitive mask layer at the corresponding position through development to expose the target part.

As an example, the photosensitive material is coated on the conductive layer on the surface of the auxiliary transfer layer 3, and the pattern to be plated is displayed by using exposure and development processes, after the development process, the photosensitive material (i.e. the photosensitive material on the surface of the target portion) which has not undergone photopolymerization reaction is plasma-cleaned, so as to avoid the plating defect caused by the residual photoresist or foreign matters, and after this process is completed, the metal plating process is performed. In the electroplating process, the operation parameters include current density, plating solution flow, plating solution temperature and the like, different operation parameter combinations have different electroplating rates, and the operation parameters can be selected according to actual conditions in the embodiment. And after the electroplating process is finished, removing the photosensitive material, and removing the residual photosensitive material on the surface by using a plasma cleaning mode again. The photosensitive material comprises photoresist (including positive photoresist and negative photoresist), photosensitive polyimide resin, photosensitive sol-gel or a mixture or a composition thereof, and one or more of PhTES, N-methyl-2-pyrrolidone and polymethyl methacrylate mixed solution, and has better photosensitive characteristics.

And etching and removing the target part to form a convex protection structure 4 with a preset shape and wrapping the micro light-emitting chip 2, as described in the following steps.

In an embodiment of the present invention, a specific process of "etching away the target portion, forming a predetermined shape and wrapping the convex protection structure 4 of the micro light emitting chip 2" can be further described with reference to the following description.

In this embodiment, the auxiliary transfer layer 3 at the target position in the transfer carrier is etched and removed by chemical metal corrosion to form a convex protection structure 4 with a preset shape and wrapping the micro light-emitting chip 2. Specifically, the target site is etched away by rapid chemical etching. Different corrosion solutions can be respectively selected according to the materials of the auxiliary transfer layer 3, a product is immersed in the corrosion solutions, the corrosion condition is observed, the product is taken out immediately after the first target part is corroded, and the corrosion solutions are washed by clean water to be removed.

The photosensitive material is removed as described in the following steps. Specifically, the first photosensitive material layer is removed by a resist remover.

In step S140, the classified convex protection structures 4 are transferred to the target carrier 1 according to a predetermined arrangement.

In an embodiment of the invention, the specific process of "transferring the plurality of classified convex protection structures 4 to the target carrier 1 according to the preset arrangement" in step S140 can be further described with reference to the following description.

As described in the following steps, the convex protection structure 4 of one micro light emitting chip 2 is transferred to the surface of the transfer carrier 1 of another micro light emitting chip 2, and the transfer carrier 1 of one micro light emitting chip 2 is removed until the convex protection structure 4 of the micro light emitting chip 2 is completely transferred to the target carrier 1.

In an embodiment of the invention, a specific process of "transferring the convex protection structure 4 of one of the micro light emitting chips 2 to the surface of the transfer carrier 1 of another one of the micro light emitting chips 2, and removing the transfer carrier 1 of one of the micro light emitting chips 2 until all the convex protection structures 4 of the micro light emitting chips 2 are transferred to the target carrier 1" can be further described with reference to the following description.

Transferring the convex protection structure 4 of the micro light-emitting chip 2 to a preset distance of the convex protection structure 4 of another micro light-emitting chip 2 as described in the following steps; wherein the preset distance is 2 to 200 micrometers.

In a concrete implementation, if according to color classification, when placing the red, green and blue three-primary-color micro light-emitting chips 2 on the surfaces of three different transfer carrier plates 1, the green light-emitting chips can be turned over by 180 degrees, the convex protection structures 4 of the green light-emitting chips are aligned to the surfaces of the transfer carrier plates 1 of the red light-emitting chips, the convex protection structures 4 of the green light-emitting chips and the convex protection structures 4 of the red light-emitting chips are pressed in a staggered manner, the transfer carrier plates 1 of the green light-emitting chips are removed, and the two-primary-color light-emitting prefabricated member is obtained, wherein the preset distance of the pressed in a staggered manner is 2 micrometers to 200 micrometers. Then the red luminescent chip is turned over by 180 degrees, the convex protection structure of the red luminescent chip is aligned to the surface of the transfer carrier plate 1 of the two-primary-color luminescent prefabricated member (namely the transfer carrier plate of the original red luminescent chip), and staggered pressing is carried out, thus finishing the mass transfer of the three-primary-color micro luminescent chip 2. It should be noted that, the transferring sequence in this embodiment is not limited, and the final target carrier board 1 may be the original red light emitting chip, or the transfer carrier board 1 of the green or blue light emitting chip, and may be specifically set according to actual requirements. The transferring step for sorting the sizes or types of the micro light emitting chips 2 is the same as the transferring step described above, and is not described herein again.

In an embodiment of the application, the material of the transfer carrier is a transparent material such as glass, plastic, or the like, and the transparent material can better observe and transfer the micro light-emitting chip.

The present application further provides a method for packaging a huge amount of micro light-emitting chips, the method relates to the method for transferring the huge amount of micro light-emitting chips 2, and the packaging method comprises:

and etching to remove the auxiliary transfer layer 3 on the target carrier plate 1, and performing glue filling and packaging on the target carrier plate 1 to obtain the light-emitting module.

As an example, the auxiliary transfer layer 3 of the convex protection structure 4 on the target carrier 1 is etched away by rapid chemical etching. Specifically, different corrosion solutions can be respectively selected for corrosion according to the material of the auxiliary transfer layer 3, the corrosion condition is observed, and after the auxiliary transfer layer 3 is corroded, the corrosion solution is washed by clear water to remove.

And performing glue filling and packaging on the target carrier plate 1 which is subjected to massive transfer by adopting packaging glue to obtain the light-emitting module. Specifically, the encapsulation adhesive includes one or more of epoxy resin, silicone, PI (Polyimide) resin, PE (Polyethylene) resin, and PT (phenyl Triazine) resin. The packaging adhesive layer formed after the packaging adhesive is cured has good insulation and sealing performance, can provide protection and prevent a product from being affected with damp.

The present application further provides a light emitting module prepared by the method for packaging a huge amount of micro light emitting chips, which includes: the packaging adhesive layer, the target carrier plate 1 and the micro light-emitting chip 2;

the micro light-emitting chips 2 are arranged on the surface of the target carrier plate 1 in an array; the packaging adhesive layer is adhered to the surface of the target carrier plate 1 and wraps the micro light-emitting chip 2.

As an example, referring to fig. 3, an internal view of the light emitting module is shown, except for an encapsulation adhesive layer, where a plurality of classified micro light emitting chips 2 are arranged on the surface of the target carrier 1 in an array, and the encapsulation adhesive layer wraps the outside of the micro light emitting array.

While preferred embodiments of the present application have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the true scope of the embodiments of the application.

Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or terminal apparatus that comprises the element.

The above detailed description is given to the transfer method, the packaging method, and the light emitting module of the huge micro light emitting chip provided by the present application, and a specific example is applied in the present application to explain the principle and the implementation manner of the present application, and the description of the above embodiment is only used to help understanding the method and the core idea of the present application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (11)

1. A transfer method of huge micro light-emitting chips is applied to package huge micro light-emitting chips of different types in a preset mode, and is characterized by comprising the following steps:

determining the classification of the micro light-emitting chips, and placing the micro light-emitting chips after the classification on the surface of the corresponding transfer carrier plate;

laying an auxiliary transfer layer on the transfer carrier plate on which the micro light-emitting chip is placed; wherein the height of the auxiliary transfer layer is lower than the surface of the micro light-emitting chip;

etching to remove the auxiliary transfer layer at the target position in the transfer carrier plate, and forming a convex protection structure with a preset shape and wrapping the micro light-emitting chip;

and transferring the plurality of classified convex protection structures to a target carrier plate according to a preset arrangement mode.

2. The transfer method according to claim 1, wherein the step of etching away the auxiliary transfer layer at the target position in the transfer carrier to form a predetermined shape and to wrap the convex protection structure of the micro light emitting chip comprises:

coating a photosensitive material on the surface of the auxiliary transfer layer, and carrying out exposure and development to expose the target part of the auxiliary transfer layer;

etching and removing the target part to form a convex protection structure with a preset shape and wrapping the micro light-emitting chip;

and removing the photosensitive material.

3. The transfer method according to claim 2, wherein the step of coating a photosensitive material on the surface of the auxiliary transfer layer, and performing exposure and development to expose the target portion of the auxiliary transfer layer comprises:

coating a photosensitive material on the surface of the auxiliary transfer layer to form a photosensitive mask layer and exposing to form the target part;

and removing the photosensitive mask layer at the corresponding position through development to expose the target part.

4. The transfer method according to claim 1, wherein the step of etching away the auxiliary transfer layer at the target position in the transfer carrier to form a predetermined shape and to wrap the convex protection structure of the micro light emitting chip comprises:

and etching and removing the auxiliary transfer layer at the target part in the transfer carrier plate through chemical metal corrosion to form a convex protection structure which is in a preset shape and wraps the micro light-emitting chip.

5. The transfer method according to claim 1, wherein the step of determining the classification of the micro light-emitting chips and placing the micro light-emitting chips determined to be classified on the surface of the corresponding transfer carrier comprises:

classifying the micro light-emitting chips according to the light-emitting colors, and placing the classified micro light-emitting chips on the surfaces of the corresponding transfer carrier plates;

or;

classifying the micro light-emitting chips according to the sizes of the chips, and placing the classified micro light-emitting chips on the surfaces of the corresponding transfer carrier plates;

or;

and classifying prime micro light-emitting chips according to the chip types, and placing the classified micro light-emitting chips on the surfaces of the corresponding transfer carrier plates.

6. The transfer method according to claim 1, wherein the step of transferring the plurality of classified convex protective structures to the target carrier according to a predetermined arrangement comprises:

and transferring the convex protection structure of one micro light-emitting chip to the surface of the transfer carrier plate of the other micro light-emitting chip, and removing the transfer carrier plate of one micro light-emitting chip until the convex protection structure of the micro light-emitting chip is completely transferred to the target carrier plate.

7. The transfer method according to claim 6, wherein the step of transferring the convex protection structure of one micro light emitting chip to the surface of the transfer carrier of another micro light emitting chip comprises:

transferring the convex protection structure of the micro light-emitting chip to a preset distance of the convex protection structure of another micro light-emitting chip; wherein the predetermined distance is 2 to 200 micrometers.

8. The transfer method according to claim 1, wherein the material of the auxiliary transfer layer is one or more of epoxy resin, silicone rubber, and hybrid rubber.

9. The transfer method according to claim 1, characterized in that the material of the transfer carrier plate comprises glass, subgeneric force or plastic.

10. A method for packaging a huge micro light-emitting chip, the method for packaging relates to the method for transferring the huge micro light-emitting chip of any one of claims 1 to 8, the method for packaging comprises:

and etching to remove the auxiliary transfer layer on the target carrier plate, and performing glue filling and packaging on the target carrier plate to obtain the light-emitting module.

11. A light emitting module fabricated by the method for packaging a huge amount of micro light emitting chips as claimed in claim 9, comprising: the packaging adhesive layer, the target carrier plate and the micro light-emitting chip are arranged;

the micro light-emitting chips are arranged on the surface of the target carrier plate in an array manner; the packaging adhesive layer is adhered to the surface of the target carrier plate and wraps the micro light-emitting chip.

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