CN115831727A - Method for preparing semi-insulating silicon carbide wafer by adopting electron irradiation, wafer and device - Google Patents
Method for preparing semi-insulating silicon carbide wafer by adopting electron irradiation, wafer and device Download PDFInfo
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- CN115831727A CN115831727A CN202211620101.XA CN202211620101A CN115831727A CN 115831727 A CN115831727 A CN 115831727A CN 202211620101 A CN202211620101 A CN 202211620101A CN 115831727 A CN115831727 A CN 115831727A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 118
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000007547 defect Effects 0.000 claims abstract description 38
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 125000004429 atom Chemical group 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 229910001009 interstitial alloy Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 150000001721 carbon Chemical group 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to the technical field of semiconductor manufacturing, and discloses a method for preparing a semi-insulating SiC wafer by adopting electron irradiation, a corresponding wafer and a corresponding device, wherein the SiC wafer is processed by adopting the electron irradiation, so that point defects are generated in the SiC wafer, and the semi-insulating SiC wafer meeting the resistivity requirement is preliminarily formed; wherein the point defects include interstitial atoms and vacancies; performing medium-temperature annealing on the semi-insulating silicon carbide wafer meeting the resistivity requirement to enable interstitial atoms generated by electron irradiation to form a double-gap compound or a triple-gap compound and reserve vacancies, thereby obtaining the prepared semi-insulating silicon carbide wafer; the invention utilizes electron irradiation and medium temperature annealing to generate a large amount of point defects in the silicon carbide wafer, increases the resistivity of the semi-insulating silicon carbide wafer, and then utilizes medium temperature rapid annealing to enable interstitial carbon to rapidly form a compound, thereby leaving useful carbon vacancy and improving the higher thermal stability of the semi-insulating silicon carbide wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a semi-insulating silicon carbide wafer by adopting electron irradiation, and a corresponding wafer and a corresponding device.
Background
The silicon carbide material has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift velocity and the like, and has huge application prospects in the aspects of high temperature, high frequency, high power, photoelectron, radiation resistance and the like. In particular, semi-insulating silicon carbide substrates, which have a wide range of applications in the field of microwave devices, by "semi-insulating" is meant a resistivity greater than a certain range at room temperature, consistent with the conceptual description of "high resistivity"; transistors fabricated with semi-insulating silicon carbide can produce power in excess of five times the power density of GaAs microwave components at frequencies up to 10 GHz; therefore, the semi-insulating silicon carbide substrate with high crystal quality can be manufactured to prepare high-performance radio frequency devices and the like.
In the existing market, the semi-insulating silicon carbide material is mostly prepared by doping V element or simply through electron irradiation;
the disadvantage of the semi-insulating silicon carbide doped with V element is that the doping concentration of V needs to be accurately controlled, and if the doping concentration of V is too low, an ideal semi-insulating characteristic effect cannot be achieved; if the doping concentration of the V element is too high, V-containing precipitates are easily caused, so that micropipe defects are generated in the semi-insulating silicon carbide material; the semi-insulating silicon carbide doped with the V element has the second defect that the doping depth of the V element is not necessarily deep, so that the longitudinal resistance distribution of the silicon carbide wafer is not necessarily uniform, and the longitudinal semi-insulating property is poor;
the semi-insulating silicon carbide produced by pure electron irradiation has the defects that the types of generated point defects are simpler, the thermal stability is poor, and the defects are easy to be generatedAfter the prepared semi-insulating silicon carbide wafer is used for subsequent other processes, such as 1400 ℃ annealing, the resistivity of the sample after single electron irradiation is still reduced to 10 5 The thermal stability, which is a semi-insulating property of silicon carbide, is deteriorated due to Ω · cm or less.
Disclosure of Invention
The invention aims to overcome the problem of poor effect of the existing preparation method of the semi-insulating silicon carbide wafer, and provides a method for preparing the semi-insulating silicon carbide wafer by adopting electron irradiation, and a corresponding wafer and a corresponding device.
In order to achieve the above object, the present invention provides a method for preparing a semi-insulating silicon carbide wafer by electron irradiation, comprising the steps of:
providing a silicon carbide wafer, processing the silicon carbide wafer by adopting electron irradiation, generating point defects in the silicon carbide wafer, and preliminarily forming a semi-insulating silicon carbide wafer meeting the resistivity requirement; wherein the point defects include interstitial atoms and vacancies;
and carrying out medium-temperature annealing on the semi-insulating silicon carbide wafer meeting the resistivity requirement, so that interstitial atoms generated by electron irradiation form a double-interstitial compound or a triple-interstitial compound, and reserving vacancies, thereby obtaining the prepared semi-insulating silicon carbide wafer.
As an implementation mode, the electron energy range of the electron irradiation is 0.2MeV-10MeV, and the electron dose range of the electron irradiation is 10 15 -10 18 cm -2 。
As an embodiment, the medium temperature is in the range of 500 to 1000 ℃.
As an embodiment, the interstitial atoms include interstitial silicon atoms and interstitial carbon atoms, and the vacancies include silicon vacancies and carbon vacancies.
As an example, the chemical formula for forming a double-gap complex is Isi + Ic = IsiIc, where Isi represents a gap silicon atom, ic represents a gap carbon atom, and IsiIc represents a double gap atom; the chemical formula for forming a triple gap complex is 2Isi + Ic = IsiIcIsi, where Isi represents the interstitial silicon atom, ic represents the interstitial carbon atom, and IsiIcIsi represents the triple interstitial atom.
As one possible implementation, the semi-insulating SiC wafer meeting the resistivity requirement has a resistivity greater than 10 8 Ω·cm。
As an implementation mode, when the electron energy range of the electron irradiation is 0.2MeV-10MeV, the electron dose range of the electron irradiation is 10 15 -10 18 cm -2 Then, the resistivity of the obtained semi-insulating silicon carbide wafer is more than 10 10 Ω·cm。
As an implementation mode, the step of processing the silicon carbide wafer by electron irradiation to generate point defects in the silicon carbide wafer, and the step of preliminarily forming the semi-insulating silicon carbide wafer meeting the resistivity requirement comprises the following steps:
the method comprises the steps of bombarding a silicon carbide wafer by using an electron irradiation device in an electron irradiation mode, wherein electrons collide with silicon atoms and carbon atoms in the silicon carbide wafer to form point defects in the electron irradiation process, so that the free carrier concentration is reduced due to defect energy levels, the resistivity of the silicon carbide wafer is improved, and the semi-insulating silicon carbide wafer meeting the resistivity requirement is preliminarily produced.
Correspondingly, the invention also provides a semi-insulating silicon carbide wafer prepared by the method for preparing the semi-insulating silicon carbide wafer by adopting electron irradiation.
Correspondingly, the invention also provides a semiconductor device comprising the semi-insulating silicon carbide wafer prepared by the method for preparing the semi-insulating silicon carbide wafer by adopting electron irradiation.
The invention has the beneficial effects that: the method comprises the steps of processing the silicon carbide wafer by adopting electron irradiation to generate point defects in the silicon carbide wafer, and preliminarily forming the semi-insulating silicon carbide wafer meeting the resistivity requirement; wherein the point defects include interstitial atoms and vacancies; performing medium-temperature annealing on the semi-insulating silicon carbide wafer meeting the resistivity requirement to enable interstitial atoms generated by electron irradiation to form a double-gap compound or a triple-gap compound, so that vacancies are reserved, and thus the prepared semi-insulating silicon carbide wafer is obtained; the invention utilizes electron irradiation and medium temperature annealing to generate a large amount of point defects in the silicon carbide wafer, thereby increasing the resistivity of the semi-insulating silicon carbide wafer, and then utilizes medium temperature rapid annealing to enable interstitial carbon atoms to rapidly form a compound, thereby leaving useful carbon vacancies and improving the higher thermal stability of the semi-insulating silicon carbide wafer.
Drawings
FIG. 1 is a schematic diagram of the steps of a method for preparing a semi-insulating SiC wafer by electron irradiation according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present embodiment provides a technical solution: a method for preparing a semi-insulating silicon carbide wafer by adopting electron irradiation comprises the following steps:
step S100, providing a silicon carbide wafer, processing the silicon carbide wafer by adopting electron irradiation, generating point defects in the silicon carbide wafer, and preliminarily forming a semi-insulating silicon carbide wafer meeting the resistivity requirement; wherein the point defects include interstitial atoms and vacancies;
and step S200, performing medium-temperature annealing on the semi-insulating silicon carbide wafer meeting the resistivity requirement, so that interstitial atoms generated by electron irradiation form a double-interstitial compound or a triple-interstitial compound, and reserving vacancies, thereby obtaining the prepared semi-insulating silicon carbide wafer.
Executing step S100, processing the silicon carbide wafer by adopting electron irradiation, generating point defects in the silicon carbide wafer, and preliminarily forming the semi-insulating silicon carbide wafer meeting the resistivity requirement, wherein the step S comprises the following steps:
the method comprises the steps of bombarding a silicon carbide wafer by using an electron irradiation device in an electron irradiation mode, wherein electrons collide with silicon atoms and carbon atoms in the silicon carbide wafer to form point defects in the electron irradiation process, so that the free carrier concentration is reduced due to defect energy levels, the resistivity of the silicon carbide wafer is improved, and the semi-insulating silicon carbide wafer meeting the resistivity requirement is preliminarily produced.
In the present embodiment, the silicon carbide material is irradiated with electron irradiation to generate a plurality of types of point defects, thereby forming a semi-insulating silicon carbide wafer satisfying the resistivity requirement.
In the prior art, the resistivity of the semi-insulating silicon carbide wafer meeting the resistivity requirement is more than 10 8 Ω·cm。
In the present embodiment, the electron energy range of the electron irradiation is 0.2MeV-10MeV, and the electron dose range of the electron irradiation is 10 15 -10 18 cm -2 The temperature during irradiation is room temperature, and the time range is 1-300 minutes; specifically, the resistivity of the semi-insulating silicon carbide wafer obtained by adopting the energy and dosage ranges specified in the embodiment is more than 10 10 Ω · cm, and the resistivity of a typical semi-insulating silicon carbide wafer is required to be more than 10 8 Omega cm, it can be seen that the electron energy range and the electron dose range adopted in the embodiment are limited, so that the cost is low, but the resistivity of the primarily formed semi-insulating silicon carbide wafer is still high, and the resistivity is further improved while the requirements are met.
Specifically, the electron energy range is 0.2MeV-10MeV, and the electron dose range is 10 15 -10 18 cm -2 In the process, the resistivity range generated by electron irradiation can meet the requirement of semi-insulating silicon carbide resistance; since irradiation of electrons produces 1-point defects such as carbon vacancies, the point defects produced increase with increasing irradiation dose, thereby increasing the resistivity of the semi-insulating silicon carbide material, while in the irradiation range disclosed in this exampleThe number of point defects is suitable for the resistivity, so that the relevant requirements are met, and the cost is not increased; among them, 0.2MeV to 10MeV is a low energy range, mainly generating simple point defects such as silicon vacancy and the like, but generating only a small amount of complex point defects such as silicon vacancy-carbon vacancy and the like, and thus, having poor thermal stability.
It should be noted that, in the prior art, due to the limitation of the electron irradiation equipment, electrons with higher energy range, such as energy above 10MeV, cannot be generated, so that the number of complex point defects generated based on electron irradiation is small, and the resistivity is low, therefore, the embodiment further adopts the medium-temperature annealing technology, so that the number of complex point defects is increased, and carbon vacancies can be reserved; the semiconductor performance of the semi-insulating silicon carbide material is enhanced.
In the embodiment, the medium temperature is in a temperature range of 500-1000 ℃, in the embodiment, medium temperature annealing is adopted, generally, interstitial carbon atoms are compounded with carbon vacancies and interstitial silicon atoms are compounded with silicon vacancies, so that point defects disappear, and during medium temperature annealing, the interstitial carbon atoms and the interstitial silicon atoms form double gaps or triple gaps, so that the number of complex point defects is increased, the simple point defect of vacancies is reserved, and the resistivity requirement of the semi-insulating silicon carbide wafer is further improved; once the interstitial atoms form double gaps or triple gaps, the interstitial atoms cannot be combined with the vacancies so as to eliminate the vacancies, so that the vacancies are reserved to the maximum extent;
on the other hand, the medium-temperature annealing is mainly used to retain the carbon vacancies in this embodiment, because the carbon vacancies have high thermal stability, that is, do not disappear at a high temperature, the semi-insulating property of the silicon carbide at a high temperature is maintained, that is, the thermal stability of the semi-insulating silicon carbide is increased, so that the resistivity is not reduced after the prepared semi-insulating silicon carbide wafer is used for performing other subsequent processes, for example, 1400 ℃ annealing; the semi-insulating property requirement of the prepared semi-insulating silicon carbide wafer is maintained.
Wherein the chemical formula for forming the double-gap complex is Isi + Ic = IsiIc, where Isi represents a gap silicon atom, ic represents a gap carbon atom, and IsiIc represents a double gap atom; the chemical formula for forming a triple gap complex is 2Isi + Ic = IsiIcIsi, where Isi represents the interstitial silicon atom, ic represents the interstitial carbon atom, and IsiIcIsi represents the triple interstitial atom.
After the silicon carbide wafer is subjected to electron irradiation, the intermediate-temperature rapid annealing is utilized to generate a large number of point defects in the silicon carbide wafer, so that the resistivity of the semi-insulating silicon carbide wafer is increased, and the intermediate-temperature rapid annealing is utilized to enable interstitial carbon to quickly form a compound, so that useful carbon vacancies are left, and the higher thermal stability of the semi-insulating silicon carbide wafer is improved.
Based on the same inventive concept, the invention also provides a semi-insulating silicon carbide wafer prepared by the method for preparing the semi-insulating silicon carbide wafer by adopting electron irradiation.
Based on the same inventive concept, the invention also provides a semiconductor device comprising the semi-insulating silicon carbide wafer prepared by the method for preparing the semi-insulating silicon carbide wafer by adopting electron irradiation.
Wherein the semiconductor device comprises a radio frequency device and the like.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (10)
1. A method for preparing a semi-insulating silicon carbide wafer by adopting electron irradiation is characterized by comprising the following steps:
providing a silicon carbide wafer, processing the silicon carbide wafer by adopting electron irradiation, generating point defects in the silicon carbide wafer, and preliminarily forming a semi-insulating silicon carbide wafer meeting the resistivity requirement; wherein the point defects include interstitial atoms and vacancies;
and carrying out medium-temperature annealing on the semi-insulating silicon carbide wafer meeting the resistivity requirement, so that interstitial atoms generated by electron irradiation form a double-interstitial compound or a triple-interstitial compound, and reserving vacancies, thereby obtaining the prepared semi-insulating silicon carbide wafer.
2. The method for preparing semi-insulating SiC wafer by electron irradiation of claim 1, wherein the electron energy of the electron irradiation is in the range of 0.2MeV to 10MeV, and the electron dose of the electron irradiation is in the range of 10 15 -10 18 cm -2 。
3. The method for preparing a semi-insulating silicon carbide wafer by electron irradiation according to claim 1, wherein the medium temperature is in a range of 500-1000 ℃.
4. The method for preparing a semi-insulating silicon carbide wafer by electron irradiation according to claim 1, wherein the interstitial atoms comprise interstitial silicon atoms and interstitial carbon atoms, and the vacancies comprise silicon vacancies and carbon vacancies.
5. The method for preparing a semi-insulating silicon carbide wafer by electron irradiation according to claim 1, wherein the chemical formula for forming the double gap composite is Isi + Ic = IsiIc, wherein Isi represents interstitial silicon atoms, ic represents interstitial carbon atoms, and IsiIc represents double interstitial atoms; the chemical formula for forming a triple gap composite is 2Isi + Ic = IsiIcIsi, where Isi represents an interstitial silicon atom, ic represents an interstitial carbon atom, and IsiIcIsi represents a triple-interstitial atom.
6. The method for preparing a semi-insulating SiC wafer by electron irradiation of claim 1, wherein the resistivity of the semi-insulating SiC wafer meeting the resistivity requirement is greater than 10 8 Ω·cm。
7. The method for preparing semi-insulating SiC wafer by electron irradiation of claim 2, wherein when the electron energy of said electron irradiation is in the range of 0.2MeV-10MeV, the electron dose of said electron irradiation is in the range of 10 15 -10 18 cm -2 Then, the resistivity of the obtained semi-insulating silicon carbide wafer is more than 10 10 Ω·cm。
8. The method for preparing a semi-insulating silicon carbide wafer by electron irradiation according to claim 1, wherein the step of processing the silicon carbide wafer by electron irradiation to generate point defects in the silicon carbide wafer to preliminarily form a semi-insulating silicon carbide wafer meeting the resistivity requirement comprises:
the method comprises the steps of bombarding a silicon carbide wafer by using an electron irradiation device in an electron irradiation mode, wherein electrons collide with silicon atoms and carbon atoms in the silicon carbide wafer to form point defects in the electron irradiation process, so that the free carrier concentration is reduced due to defect energy levels, the resistivity of the silicon carbide wafer is improved, and the semi-insulating silicon carbide wafer meeting the resistivity requirement is preliminarily produced.
9. A semi-insulating silicon carbide wafer prepared by the method for preparing a semi-insulating silicon carbide wafer by electron irradiation according to any one of claims 1 to 8.
10. A semiconductor device comprising the semi-insulating silicon carbide wafer produced by the method for producing a semi-insulating silicon carbide wafer by electron irradiation according to any one of claims 1 to 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211620101.XA CN115831727A (en) | 2022-12-15 | 2022-12-15 | Method for preparing semi-insulating silicon carbide wafer by adopting electron irradiation, wafer and device |
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| CN202211620101.XA CN115831727A (en) | 2022-12-15 | 2022-12-15 | Method for preparing semi-insulating silicon carbide wafer by adopting electron irradiation, wafer and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118338770A (en) * | 2024-06-12 | 2024-07-12 | 浙江大学杭州国际科创中心 | Silicon carbide photoelectric nerve synapse device and preparation method and application thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118338770A (en) * | 2024-06-12 | 2024-07-12 | 浙江大学杭州国际科创中心 | Silicon carbide photoelectric nerve synapse device and preparation method and application thereof |
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