CN115831702B - Multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation - Google Patents
Multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation Download PDFInfo
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Abstract
The invention provides a multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation, and relates to the technical field of semiconductors. The multifunctional high-temperature reaction device comprises an air source, a transverse plasma generation chamber, a horizontal high-temperature reaction chamber and a vacuum module which are sequentially communicated, wherein the transverse plasma generation chamber comprises a cavity, an induction coil and a filtering device, and an air inlet and an air outlet which are transversely arranged are respectively formed at two ends of the cavity; the induction coil is arranged on the cavity and is close to one side of the air inlet; the filter device is arranged in the cavity and is close to one side of the air outlet, and comprises at least one layer of metal filter plate provided with filter holes, so that ions in plasma can be filtered, the filtering effect on charged ions is improved, the charged ions in the plasma reaching the surface of the SiC wafer for oxidation reaction are reduced, and SiC/SiO with few defects and low density of states is prepared 2 And (5) an interface.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation.
Background
SiC MOSFETs are an important class of power control devices that theoretically have numerous advantages, but current SiC MOSFET fabrication technology is a major technical limitation that limits the large-scale application of silicon carbide power devices, mainly due to SiC/SiO 2 The interface state density is too high (compared with the traditional Si/SiO 2 The interface is about two orders of magnitude higher), resulting in defects of low channel mobility, large on-resistance, etc. of SiC MOSFETs.
The initial SiC surface before oxidation is treated to improve the surface characteristics of SiC, and then oxidized, thereby reducing SiC/SiO 2 Interface state density. At present, regarding the surface treatment process of SiC, various proposals have been made at home and abroad, among which there are mainly conventional wet treatments (such as RCA, boiling water treatment, HF/HCL treatment, etc.), high-temperature hydrogen treatment, plasma treatment, etc. Plasma deviceThe sub-process SiC wafers have advantages of no introduction of impurity ions, low processing temperature, and the like, and thus have received much attention. However, when SiC is treated by plasma, the charged ions in the plasma tend to cause new damage to the SiC surface.
In order to obtain a SiC MOSFET device with low density of states and excellent performance, the surface of a SiC substrate needs to be oxidized to form SiC/SiO 2 Reuse of NO/N 2 Passivation SiC/SiO of O annealing process, plasma treatment process and the like 2 Interfacial, or preparing SiC/SiO by surface treatment and reoxidation of SiC 2 The nitrogen annealing process, the plasma treatment process and the oxidation process involved in this process are currently required to be performed in an annealing apparatus, a plasma treatment apparatus and a high temperature oxidation apparatus, respectively, such as SiC/SiO 2 Interface preparation, typically by cleaning the SiC surface and then reacting with O at high temperature 2 Reacting to generate SiO 2 The film is prepared, but because of the high chemical stability of SiC, the dry oxygen oxidation temperature is far higher than Si, generally above 1000 ℃, and needs to be performed in a high temperature furnace, while the plasma treatment process needs to be performed in a separate plasma device.
As above, the existing process has complicated steps, more equipment is needed, and additional pollution is easy to generate due to environmental factors or operation and the like when a sample is transferred from one equipment to another equipment, so that a multifunctional reaction device is needed to be designed, different requirements of plasma treatment, high-temperature oxidation and the like can be met, and SiC/SiO meeting the application requirements of SiC MOSFET devices can be realized 2 Preparation of the structure.
In addition, when the SiC surface is treated by the plasma, charged ions in the plasma damage the SiC surface, and the conventional art has reduced the damage by providing a filter device, but the filtering effect is still insufficient.
Disclosure of Invention
In order to solve the defects in the prior art, the invention aims to provide a multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation, the device can realize the surface plasma treatment of SiC wafers and the high-temperature oxidation process of SiC at the same time, and simplify the SiC MOSFET preparation processMeanwhile, by designing the filter device in the plasma generation chamber, charged ions in the plasma reaching the surface of the SiC wafer can be reduced, so that SiC/SiO with few defects and low state density can be prepared 2 And (5) an interface.
Embodiments of the invention may be implemented as follows:
in a first aspect, the invention provides a multifunctional high-temperature reaction device, which comprises a gas source, a transverse plasma generation chamber, a horizontal high-temperature reaction chamber and a vacuum module which are sequentially communicated, and also comprises a radio frequency power supply module;
wherein the transverse plasma generating chamber comprises:
the two ends of the cavity are respectively provided with an air inlet and an air outlet which are transversely arranged;
the induction coil is arranged on the cavity and is close to one side of the air inlet;
the filtering device is arranged in the cavity and is close to one side of the air outlet, and comprises at least one layer of metal filter plate provided with filter holes;
the air source is connected to the air inlet of the transverse plasma generation chamber, the horizontal high-temperature reaction chamber is connected to the air outlet of the transverse plasma generation chamber, and the radio frequency power supply module is electrically connected with the induction coil.
In an alternative embodiment, for a plurality of equally spaced regions of equal height of the metal filter plate along the longitudinal direction, the effective size of the cross section of the filter holes of any lower region is not greater than the effective size of the cross section of the filter holes of any upper region, and the filter coefficient of any lower region is greater than the filter coefficient of the upper region;
the effective size of the cross section of the filter hole is the distance between two points with the largest distance on the cross section outline of the filter hole;
filter coefficient = filter pore effective length the regional porosity/filter pore effective size, porosity = regional pore area/regional area; the effective length of the filter holes is the shortest path length for gas to flow through the pores.
In an alternative embodiment, the effective size of the cross-section of the filter holes in any lower region of the metal filter plate is smaller than the effective size of the cross-section of the filter holes in any upper region, and the porosity of any lower region of the metal filter plate is not smaller than the porosity of any upper region.
In an alternative embodiment, the effective length of the filter holes in any lower region of the metal filter plate is greater than the effective length of the filter holes in any upper region.
In an alternative embodiment, the thickness of any lower region of the metal filter plate is greater than the thickness of any upper region, and the ratio of the thickness of the bottom end to the thickness of the top end of the metal filter plate is 1.2-5.
In an alternative embodiment, the filter holes are disposed at an incline with any lower region filter hole incline angle greater than any upper region filter hole incline angle and the lowermost filter hole incline angle θ greater than 30 degrees.
In an alternative embodiment, the effective distance between the filtering hole and the air inlet end of any upper region of the filtering device is smaller than the effective distance between the filtering hole and the air inlet end of any lower region, the effective distance between the filtering hole and the ionization region is the horizontal distance between the filtering hole or the flow guiding structure and the air inlet end, and the flow guiding structure is used for guiding the air to move upwards and enter the filtering hole.
In an alternative embodiment, the filter device is inclined, and the upper part of the filter device is inclined towards the air inlet at an angle of 30-80 degrees.
In an alternative embodiment, the flow guiding structure is connected to the air inlet side of the metal filter plate and is located between two adjacent filter holes, the length of any upper area flow guiding structure is greater than that of any lower area flow guiding structure, the length of the top layer flow guiding structure/the length of the bottom layer flow guiding structure is 1.5-10, and the length of the uppermost layer flow guiding structure is 1.5-6 times the thickness of the metal filter plate.
In an alternative embodiment, the filtering device is a single-layer metal filter plate, the thickness of the top end of the single-layer metal filter plate is 8-50 mm, the effective size of the cross section of each filtering hole is 0.5-15 mm, the porosity of any area is 0.3-0.8, and the ratio of the effective length of any filtering hole to the effective size of the cross section is more than or equal to 2.
In an alternative embodiment, the filtering device comprises at least two layers of metal filtering plates, the filtering holes of two adjacent layers of metal filtering plates are arranged in a staggered mode, the thickness of the top end of each single-layer metal filtering plate is 2-10 mm, the effective size of the cross section of each filtering hole is 0.5-10 mm, the porosity of any area is 0.2-0.8, and the ratio of the effective length of any filtering hole to the effective size of the cross section is more than or equal to 3.
In an alternative embodiment, the transverse plasma generation chamber further comprises a splitter plate disposed between the gas inlet and the induction coil.
In a second aspect, the present invention provides the use of any one of the multifunctional high-temperature reaction devices according to the previous embodiments in the manufacture of SiC MOSFETs.
The multifunctional high-temperature reaction device provided by the embodiment of the invention has the beneficial effects that:
the gas entering the cavity is ionized by the induction coil to generate plasma, the filtering device can filter ions (such as argon ions, helium ions, hydrogen ions and the like) in the plasma, and the filtering effect on charged ions is improved, so that charged ions in the plasma reaching the surface of the SiC wafer for oxidation reaction are reduced, and SiC/SiO with few defects and low density of states is prepared 2 And (5) an interface.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a multifunctional high-temperature reaction device according to an embodiment of the present invention;
FIG. 2 is a schematic view of a first configuration of a transverse plasma-generating chamber;
FIG. 3 is a schematic view of a first construction of a filter device;
FIG. 4 is a schematic view of a second construction of a filter device;
FIG. 5 is a schematic view of a third construction of a filter device;
FIG. 6 is a fourth schematic view of a filter device;
FIG. 7 is a fifth schematic view of a filter device;
FIG. 8 is a schematic view of a second configuration of a transverse plasma-generating chamber;
fig. 9 is a schematic view of a third configuration of the transverse plasma-generating chamber.
Icon: 100-a multifunctional high-temperature reaction device; 200-a transverse plasma generation chamber; 300-sample piece; 1-an air source; 2-a horizontal high-temperature reaction chamber; 21-an external furnace body; 22-an insulating layer; 23-quartz tube reaction chamber; 24-slide boat; 3-a vacuum module; 4-a radio frequency power supply module; 5-a cavity; 51-air inlet; 52-an air outlet; 6-a splitter plate; 7-an induction coil; 8-a filtering device; 81-filtration pores; 82-a first filter plate; 83-a second filter plate; 84-a third filter plate; 85-fourth filter plates; 86-filter plate; 87-flow guiding structure.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1, the present embodiment provides a multifunctional high-temperature reaction apparatus 100, and the multifunctional high-temperature reaction apparatus 100 includes a gas source 1, a transverse plasma generation chamber 200, a horizontal high-temperature reaction chamber 2 and a vacuum module 3, which are sequentially communicated. The multi-functional high temperature reaction apparatus 100 further includes a radio frequency power module 4 electrically connected to the induction coil 7 in the transverse plasma generation chamber 200. The radio frequency power supply module 4 is used for controlling and providing the electric energy required for ionization. The gas source 1 is used for providing reaction gas and carrier gas, and can specifically provide H 2、 N 2 And the like.
The multifunctional high-temperature reaction device 100 can realize multiple functions such as plasma treatment, high-temperature oxidation, photoresist removal and the like, and can be applied to SiC surface treatment and oxidation process to obtain SiC/SiO 2 A MOS structure; and the horizontal high-temperature reaction chamber 2 and the horizontal plasma generation chamber 200 are respectively and independently arranged, and the temperature is not affected mutually, so that the reaction temperature of the horizontal high-temperature reaction chamber 2 can be very high, and the high-temperature oxidation of SiC is realized.
Specifically, the vacuum module 3 includes a vacuum pump, a control system and a power supply, the power supply supplies power to the vacuum pump, and the control system controls the vacuum pump to pump the reaction gas of the horizontal high-temperature reaction chamber 2, the vacuum pipe and the transverse plasma generation chamber 200.
The horizontal high-temperature reaction chamber 2 is of a tube furnace structure, the horizontal high-temperature reaction chamber 2 comprises an external furnace body 21, an insulating layer 22, a quartz tube reaction cavity 23 and a slide boat 24, the insulating layer 22 is arranged on the external furnace body 21, the quartz tube reaction cavity 23 is arranged in the external furnace body 21, the slide boat 24 is arranged in the quartz tube reaction cavity 23, the slide boat 24 is used for bearing a sample wafer 300, and the sample wafer 300 can be a SiC wafer. Both ends of the horizontal high temperature reaction chamber 2 are respectively connected with the vacuum module 3 and the transverse plasma generation chamber 200 through vacuum pipelines.
Referring to fig. 1 and 2, the transverse plasma generating chamber 200 includes a cavity 5, an induction coil 7, and a filter device 8.
Specifically, the cavity 5 is provided with an air inlet 51 and an air outlet 52 which are arranged along the transverse direction; wherein the gas source 1 is connected to the gas inlet 51 of the transverse plasma generating chamber 200 and the horizontal high temperature reaction chamber 2 is connected to the gas outlet 52 of the transverse plasma generating chamber 200. The induction coil 7 is wound around the cavity 5 on a side close to the air inlet 51. The filter device 8 is mounted in the chamber 5 on the side close to the air outlet 52.
Because the heat generated in the dissociation process needs to withstand a certain temperature and avoid pollution, the cavity 5 can be made of quartz material, has an unlimited shape and can be cylindrical, square and the like. The air inlet 51 and the air outlet 52 are in a straight line.
Wherein, the induction coil 7 is used for ionizing the reaction gas to form plasma, and the induction coil 7 is positioned at the front end position of the cavity 5, which is close to the 1/2 of the air inlet 51. The filtering device 8 is used for removing charged ions in the plasma, thereby avoiding the ions from entering the horizontal high-temperature reaction chamber 2 to damage the surface of the wafer, and being beneficial to preparing SiC/SiO with few defects and low density of states 2 And (5) an interface.
The working principle of the multifunctional high-temperature reaction device 100 provided in this embodiment is as follows:
the gas supplied from the gas source 1 enters the transverse plasma generating chamber 200 from the gas inlet 51. After the radio frequency power supply module 4 is controlled to be started, gas entering an ionization region is ionized to generate plasma, and as the other side of the transverse plasma generation chamber 200 is connected with the vacuum module 3 through the horizontal high-temperature reaction chamber 2, the generated plasma continuously moves towards the air outlet 52 through the filtering device 8 when the vacuum module 3 is started, ions (such as argon ions, helium ions, hydrogen ions and the like) in the plasma can be filtered and removed by the filtering device 8, so that the ions are prevented from entering the horizontal high-temperature reaction chamber 2 to damage the surface of a wafer. Neutral reactive radicals remaining in the plasma can freely pass through the filter device 8 to the horizontal high temperature reaction chamber 2 to participate in the reaction.
When the transverse plasma generation chamber 200 is horizontally placed and the gas moves horizontally, the lower gas concentration is higher than the upper gas concentration due to the sinking of the gas caused by the gravity, so that the plasma filtering effect of the lower ionized gas needs to be improved. The filter device 8 is arranged to take the influence of the uneven distribution of the gas flow into consideration, and the filter effect on charged ions is improved by arranging the lower part of the filter device 8 to have higher filter performance than the upper part.
The filtering device 8 can adopt a single-layer metal filtering plate or a multi-layer metal filtering plate, in order to improve the filtering effect of the lower part, a plurality of equally-spaced areas with the same height are arranged on the metal filtering plate along the longitudinal direction, the effective size of the cross section of a filtering hole of any lower part area is not more than that of the cross section of a filtering hole of any upper part area, and the filtering coefficient of any lower part area is more than that of the upper part area; the effective size of the cross section of the filter hole is the distance between two points with the largest distance on the cross section outline of the filter hole; the filtration coefficient = the effective length of the filtration pores =the regional porosity/effective size of filtration pores, the porosity = the regional pore area/the regional area; the effective length of the filter holes is the shortest path length of the gas flowing through the pores.
The effective size of the cross section of the filter holes of any lower area of the metal filter plate can be smaller than that of the cross section of the filter holes of any upper area, and the porosity of any lower area of the metal filter plate is not smaller than that of any upper area.
In summary, the effective length of the filter holes in any lower region of the metal filter plate is greater than the effective length of the filter holes in any upper region can be achieved in a variety of ways.
Referring to FIG. 3, when the filter device 8 employs a single-layer metal filter plateThe size of the filter holes 81 of the filter device 8 and the arrangement of the filter holes 81 are uniformly arranged, and the filter device can be used for enhancing the filtering effect by adopting a structure that the thickness of the lower part of the filter device 8 is larger than that of the upper part, and also can be used for adopting the arrangement mode of metal filter plates with different shapes, so that the length of the filter holes 81 is increased, and the path of plasma flowing through the filter device 8 is prolonged. Upper end thickness H of filter 8 1 Is 8-50 mm, the thickness H of the lower end 2 Is 10-100 mm, H 2 /H 1 In the range of 1.2 to 5, the diameter d of the filter hole 81 is 0.5 to 15mm, the porosity is 0.3 to 0.8, H 1 And/d is more than or equal to 2 so as to ensure the filtering effect.
According to different reaction types, reaction rate requirements, ion filtration degree requirements of subsequent reactions and distance between an ionization region and the filter 8, different porosities, thicknesses and H of the filter 8 can be designed 2 /H 1 Ratio of (3): the plasma concentration in the reaction gas after filtration is high, and the subsequent reaction is little influenced by ions in the plasma, so that the porosity of the filter device 8 can be increased, and the number of metal filter plates can be reduced; when the distance L between the ionization region and the filter 8 is large and the pumping flow velocity V is small, the gas is settled down to a higher degree, and the theoretical settling height h=1/2 gt 2 =1/2g(L/V) 2 Wherein g is gravity acceleration, t is gas movement time, L is gas transverse movement distance, V is gas movement speed, and H needs to be improved 2 /H 1 Is a ratio of (2).
Referring to fig. 4, when the filtering device 8 adopts a double-layer or multi-layer metal filter plate, for example, the filtering device 8 includes a first filter plate 82 and a second filter plate 83, and the first filter plate 82 and the second filter plate 83 are provided with filter holes 81, and the thicknesses of the lower portions of the first filter plate 82 and the second filter plate 83 are greater than the thickness of the upper portion.
The positions of the filter holes 81 of the first filter plate 82 close to the air inlet area correspond to the solid metal structures on the second filter plate 83, so that the positions of the filter holes 81 of the first filter plate 82 correspond to the positions of the solid metal bodies of the second filter plate 83 without the filter holes 81. The first filter plate 82 and the second filter plate 83 may be arranged in different pore structures, or may be arranged in the same pore structure, so long as the staggered positions of the first filter plate 82 and the second filter plate 83 are ensured.
In order to increase the filtering effect, three or more stages (more than 3) of filter plates 86 can be adopted, the positions of the pores of adjacent filter plates 86 are staggered, and the pore structure can be arranged identically or differently, for example, ABA, ABC, ABAB, ABCA and other arrangement modes are adopted.
Depending on the type of reaction, the reaction rate requirements, and the ion filtration level requirements of the subsequent reactions, different porosities may be designed or the thickness of the filter plate 86 may be varied: the subsequent reaction rate is required to be fast (the plasma concentration in the reaction gas after filtration is required to be high), and the subsequent reaction is less affected by ions in the plasma, so that the porosity of the filter plate 86 can be increased or the thickness of the filter plate 86 can be reduced.
The porosity of any single-layer filter plate 86 is 0.2-0.8, and the upper end thickness H 1 Is 2-10 mm, the thickness H of the lower end 2 3-30 mm, H 2 /H 1 In the range of 1.2 to 5, the diameter d of the filter hole 81 is 0.5 to 10mm, H 1 And/d is more than or equal to 3 so as to ensure the filtering effect.
Referring to fig. 5, the filter holes 81 at the lower part of the filter device 8 may be inclined upward, so as to increase the length of the filter holes 81 at the lower part and extend the path of the plasma flowing through the filter device 8, thereby enhancing the filtering effect. The inclination angle of the filter holes 81 is uniformly decreased from bottom to top, the inclination angle θ of the lowermost filter hole 81 is greater than 30 degrees, and the uppermost filter hole 81 is horizontally disposed, i.e., the inclination angle is 0.
When the filter device 8 adopts a single-layer metal filter plate, the thickness H of the filter device 8 is 8-50 mm, the diameter d of the filter hole 81 is 0.5-15 mm, the porosity is 0.3-0.8, and H 1 And/d is more than or equal to 2 so as to ensure the filtering effect.
Referring to fig. 6, the filtering device 8 may also be a double-layer or multi-layer metal filtering plate, for example, the filtering device 8 includes a third filtering plate 84 and a fourth filtering plate 85, the third filtering plate 84 and the fourth filtering plate 85 are provided with filtering holes 81, and the filtering holes 81 at the lower parts of the third filtering plate 84 and the fourth filtering plate 85 are arranged obliquely upward. Meanwhile, the outlets of the filter holes 81 on the third filter plate 84 are staggered with the inlets of the filter holes 81 on the fourth filter plate 85.
The third filter plate 84 and the fourth filter plate 85 may be arranged in different pore structures or may have the same pore structure. The porosity of any single-layer filter plate 86 is 0.1-0.8, the thickness H is 2-10 mm, the diameter d of the filter holes 81 is 0.5-10 mm, H 1 And/d is more than or equal to 3 so as to ensure the filtering effect.
Referring to fig. 7, when the transverse plasma generating chamber 200 is horizontally disposed and the gas moves in the horizontal direction, the filtering device 8 is set to take into consideration the influence of the uneven distribution of the gas flow due to the gravity effect, and the flow guiding structure 87 is disposed at the air inlet side of the filtering device 8, so that the effective distance between any upper region filtering hole 81 and the air inlet end of the filtering device 8 is smaller than that between any lower region filtering hole 81 and the air inlet end.
Specifically, the filtering device 8 includes a filtering plate 86 and a flow guiding structure 87, and the filtering plate 86 is provided with a filtering hole 81; the guiding structure 87 is connected to one side of the filter plate 86 where air is introduced, and is located between two adjacent filter holes 81, the guiding structure 87 is a triangular prism, and the guiding structure 87 is used for guiding air to move upwards and enter the filter holes 81. When the gas reaches the guide structure 87, the downward sedimentation gas is blocked by the inclined surface of the guide structure 87 and moves upwards again, so that the plasma is filtered through the filter holes 81 at the upper part of the guide structure 87.
When specifically setting up, evenly set up filtration pore 81 in the filter 86 longitudinal region, the diameter of filtration pore 81 is even and the regional porosity of longitudinal is even to be set up promptly, and guide structure 87 sets up between adjacent filtration pore 81, and the lateral length of upper portion guide structure 87 is greater than the lateral length of arbitrary guide structure 87 of lower part for upper portion guide effect is higher than the lower part, thereby reduces gas and subsides downwards, and increases filtration homogeneity.
When the filter plate 86 is arranged, the length of the uppermost layer of the flow guiding structure 87/the length of the lowermost layer of the flow guiding structure 87 is 1.5-10, and the length of the uppermost layer of the flow guiding structure 87 is 1.5-6 times the thickness of the filter plate 86.
In other embodiments, the filtering device 8 may further be formed by two layers of metal filter plates provided with filtering holes 81, wherein the porosity of any filter plate 86 is 0.2-0.8, the thickness H is 2-10 mm, the hole diameter d is 0.5-10 mm, and the H/d is not less than 2, so as to ensure the filtering effect.
For example, the filtering device 8 includes a fifth filter plate and a sixth filter plate in the air inlet direction, where the fifth filter plate is disposed with non-uniformly arranged pores, and the lower porosity in the longitudinal direction may be smaller than the upper porosity, and the sixth filter plate is uniformly arranged pores, so as to ensure that the pores of the two filter plates are staggered, that is, the position of the pore area of the fifth filter plate near the air inlet area corresponds to the solid metal structure on the sixth filter plate, so that the position of the fifth filter plate with pores corresponds to the position of the sixth filter plate without pores, where the metal solid of the sixth filter plate passes through.
When the plasmas reach the fifth filter plate, the lower plasma concentration is higher than the upper part, and the lower porosity of the fifth filter plate is lower than the upper porosity, so that the plasmas flowing through the fifth filter plate realize uniform distribution again and then flow through the sixth filter plate uniformly provided with the filter holes 81, and the effect of further uniformly filtering ions is achieved.
Referring to fig. 8, in order to improve the filtering effect of the lower part of the filtering device 8, by providing the filtering device 8 to be inclined, the upper part of the filtering device 8 is inclined to the air inlet 51, and the lower part is inclined to the air outlet 52, i.e. the upper part of the filtering device 8 is close to the air inlet 51 relative to the lower part, so that the path through which the upper gas flows is shorter, and the gas reaches the filtering device 8 before the gas is settled to the bottom under the action of gravity, thereby improving the filtering effect on charged ions; the inclination angle of the filter device 8 is between 30 ° and 80 °, and the longer the distance between the filter device 8 and the ionization region is, the smaller the inclination angle is.
Referring to fig. 9, in other embodiments, the transverse plasma generation chamber 200 may further include a splitter plate 6, the splitter plate 6 being mounted within the cavity 5 between the gas inlet 51 and the induction coil 7. The splitter plate 6 is arranged in front of the induction coil 7, so that the air is uniformly distributed and ionized in an ionization region formed by the induction coil 7 to generate plasma, and meanwhile, the phenomenon that the air rapidly leaves from the ionization region after entering from the air inlet 51 to cause lower ionization efficiency can be avoided.
The embodiment also provides a multi-function deviceApplication of high-temperature reaction device in SiC MOSFET preparation to obtain SiC/SiO with low density of states 2 An interface comprising the steps of:
step 1: cleaning the surface of the SiC wafer by adopting a wet chemical method, removing organic impurities, metal particles and the like, and drying the surface of the SiC wafer;
step 2: loading SiC wafers into a slide boat 24, feeding the SiC wafers into a horizontal high-temperature reaction chamber 2, closing the seal, controlling an air source 1 to introduce pure nitrogen into the device, and preheating the SiC wafers to 200-300 ℃;
step 3: shut down N 2 Open H 2 &N 2 The mixed gas starts the radio frequency power supply module 4, and the mixed gas entering the transverse plasma generation chamber 200 is H under the action of the induction coil 7 2 /N 2 Ionization in the ionization region produces a highly concentrated and uniform plasma. Since the other end of the transverse plasma generating chamber 200 is connected with the vacuum module 3, the generated plasma is continuously moved to the air outlet 52 through the filtering device 8 by the mechanical pump of the vacuum module.
When passing through the specially arranged filtering device 8, ions (nitrogen ions, hydrogen ions and the like) in the plasma are filtered and removed, so that the ions enter the horizontal high-temperature reaction chamber 2 to damage the surface of the wafer. The remaining reactive radicals (H & N) may pass through the filter device 8 and enter the horizontal high temperature reaction chamber 2. In the horizontal high-temperature reaction chamber 2, active free radicals diffuse to the surface of the SiC wafer, and dangling bonds and defects on the surface layer of the SiC wafer are repaired.
Step 4: in pure nitrogen atmosphere, the temperature of the horizontal high-temperature reaction chamber is raised to 800-1100 ℃.
Step 5: shut down N 2 Introducing O 2 Turning on a radio frequency power supply, and under the action of an induction coil 7, O 2 The plasma containing oxygen active radicals is generated by ionization, and similarly to the step 3, after O ions are removed by the generated oxygen plasma through the filtering device 8, the plasma containing oxygen active radicals enters the horizontal high-temperature reaction chamber 2 and diffuses to the surface of the SiC wafer, and reacts with the SiC wafer to oxidize the SiC wafer to generate SiO 2 A thin layer.
Step 6: after the oxidation is finished, keeping the temperature unchanged, closing the gas inlet, keeping the vacuum pump on, and annealing the SiC wafer in a vacuum state;
step 7: and (3) a cooling process: after annealing is finished, pure nitrogen is introduced to cool to 300 ℃ under the protection atmosphere, then cooled to room temperature, and the slide boat 24 is slowly taken out, thus obtaining SiC/SiO 2 。
The multifunctional high-temperature reaction device 100 and the preparation method of the SiC MOSFET provided in this embodiment have the following beneficial effects:
1. can realize the plasma treatment of the surface of the SiC wafer, improve the surface characteristics of the SiC and remove surface impurities, and can realize the high-temperature oxidation process of the SiC so as to prepare the SiC/SiO with few defects and low state density 2 An interface; compared with the traditional thermal oxidation and interface passivation process, the SiC surface treatment and the SiC thermal oxidation steps can be realized in one device, and the SiC/SiO with low density of states is obtained 2 The interface simplifies the process steps, improves the efficiency and can also avoid the extra pollution of the sample caused by transferring among a plurality of devices;
2. in order to reduce the damage of charged ions to the SiC wafer during the plasma processing, the present embodiment sets the filter device 8 in the transverse plasma generation chamber 200, and designs the filter device 8 to reduce the charged ions in the plasma reaching the SiC surface for oxidation reaction, thereby reducing the damage of the charged ions in the plasma to the SiC surface and further reducing the interface state density.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (12)
1. The multifunctional high-temperature reaction device is characterized by comprising an air source (1), a transverse plasma generation chamber (200), a horizontal high-temperature reaction chamber (2) and a vacuum module (3) which are sequentially communicated, and further comprising a radio-frequency power supply module (4);
wherein the transverse plasma generation chamber (200) comprises:
the two ends of the cavity (5) are respectively provided with an air inlet (51) and an air outlet (52) which are transversely arranged;
an induction coil (7) which is arranged on the cavity (5) and is close to one side of the air inlet (51);
the filtering device (8) is arranged in the cavity (5) and is close to one side of the air outlet (52), the filtering device (8) comprises at least one layer of metal filtering plate provided with filtering holes (81), the filtering holes of any lower region have a cross section effective size which is not larger than that of any upper region, and the filtering coefficient of any lower region is larger than that of the upper region; the effective size of the cross section of the filter hole is the distance between two points with the largest distance on the cross section outline of the filter hole; the filtration coefficient = the filtration pore effective length =regional porosity/filtration pore effective size, the porosity = regional pore area/regional area; the effective length of the filtering holes is the shortest path length of the gas flowing through the pores;
the gas source (1) is connected to the gas inlet (51) of the transverse plasma generation chamber (200), the horizontal high-temperature reaction chamber (2) is connected to the gas outlet (52) of the transverse plasma generation chamber (200), and the radio-frequency power supply module (4) is electrically connected with the induction coil (7).
2. The apparatus of claim 1, wherein the effective size of the cross-section of the filter holes in any lower region of the metal filter plate is smaller than the effective size of the cross-section of the filter holes in any upper region, and the porosity of any lower region of the metal filter plate is not smaller than the porosity of any upper region.
3. A multi-functional high temperature reaction apparatus according to claim 1, wherein the effective length of the filter holes in any lower region of the metal filter plate is longer than that in any upper region.
4. A multifunctional high-temperature reaction device according to claim 3, wherein the thickness of any lower region of the metal filter plate is greater than the thickness of any upper region, and the ratio of the thickness of the bottom end to the thickness of the top end of the metal filter plate is 1.2-5.
5. A multi-functional high temperature reaction apparatus according to claim 3, wherein the filter holes (81) are obliquely arranged, and the angle of inclination of any one of the lower region filter holes (81) is larger than the angle of inclination of any one of the upper region filter holes (81), and the angle of inclination θ of the lowermost filter hole (81) is larger than 30 °.
6. A multifunctional high-temperature reaction device according to claim 1, characterized in that the effective distance between any upper region filter hole (81) and the air inlet end of the filter device (8) is smaller than the effective distance between any lower region filter hole (81) and the air inlet end, the effective distance between the filter hole (81) and the ionization region is the horizontal distance between the filter hole (81) or a flow guiding structure (87) and the air inlet end, and the flow guiding structure (87) is used for guiding gas to move upwards and enter the filter hole (81).
7. The multifunctional high-temperature reaction device according to claim 6, wherein the filtering device (8) is obliquely arranged, and the upper part of the filtering device (8) is obliquely arranged to the air inlet (51) and is inclined at an angle of 30-80 degrees.
8. The multifunctional high-temperature reaction device according to claim 6, wherein the flow guiding structure (87) is connected to the air inlet side of the metal filter plate and is positioned between two adjacent filter holes (81), the flow guiding structure length of any upper region is larger than that of any lower region, the flow guiding structure length of the top layer/bottom layer is 1.5-10, and the flow guiding structure length of the uppermost layer is 1.5-6 times the thickness of the metal filter plate.
9. The multifunctional high-temperature reaction device according to any one of claims 1 to 8, wherein the filtering device (8) is a single-layer metal filter plate, the thickness of the top end of the single-layer metal filter plate is 8 to 50mm, the effective size of the cross section of each filtering hole is 0.5 to 15mm, the porosity of any region is 0.3 to 0.8, and the ratio of the effective length of any filtering hole to the effective size of the cross section is more than or equal to 2.
10. The multifunctional high-temperature reaction device according to any one of claims 1 to 7, wherein the filtering device (8) comprises at least two layers of metal filter plates, the filtering holes (81) of two adjacent layers of metal filter plates are arranged in a staggered mode, the thickness of the top end of each metal filter plate is 2-10 mm, the effective size of the cross section of each filtering hole is 0.5-10 mm, the porosity of any region is 0.2-0.8, and the ratio of the effective length of any filtering hole to the effective size of the cross section is more than or equal to 3.
11. A multi-functional high temperature reaction device according to claim 1, characterized in that the transverse plasma generation chamber (200) further comprises a splitter plate (6) arranged between the gas inlet (51) and the induction coil (7).
12. The use of a multifunctional high-temperature reaction device according to any one of claims 1-8 in the preparation of SiC MOSFETs.
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| CN202310065447.6A CN115831702B (en) | 2023-02-06 | 2023-02-06 | Multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation |
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| CN202310065447.6A CN115831702B (en) | 2023-02-06 | 2023-02-06 | Multifunctional high-temperature reaction device and application thereof in SiC MOSFET preparation |
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| DE9405808U1 (en) * | 1994-04-11 | 1994-06-09 | Süßmuth, Norbert, Dipl.-Ing., 38106 Braunschweig | Plasma processing device |
| CN108014616A (en) * | 2018-01-11 | 2018-05-11 | 成都天田医疗电器科技有限公司 | Multifunction microwave plasma ultraviolet deodorization complete set of equipments |
| CN115613140B (en) * | 2022-12-16 | 2023-03-21 | 江苏邑文微电子科技有限公司 | Transverse plasma generating chamber and multifunctional high-temperature reaction device |
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Address after: 226400 No.1 Jinshan Road, zuegang street, Rudong County, Nantong City, Jiangsu Province Patentee after: Jiangsu Yiwen Microelectronics Technology Co.,Ltd. Patentee after: Wuxi Yiwen Microelectronics Technology Co.,Ltd. Address before: 226400 No.1 Jinshan Road, zuegang street, Rudong County, Nantong City, Jiangsu Province Patentee before: Jiangsu Yiwen Microelectronics Technology Co.,Ltd. Patentee before: WUXI YIWEN ELECTRONIC TECHNOLOGY Co.,Ltd. |
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