CN115826363A - Large-working-distance super-resolution photoetching device based on photonic crystal with defects and method thereof - Google Patents
Large-working-distance super-resolution photoetching device based on photonic crystal with defects and method thereof Download PDFInfo
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Abstract
The invention discloses a large-working-distance super-resolution lithography device based on a photonic crystal with defects and a method thereof, wherein the device is sequentially provided with a transparent substrate, a mask layer, a planarization film layer and a photonic crystal structure layer from top to bottom; the photonic crystal structure layer is at least provided with a defect layer for regulating and controlling a photonic band gap and a plurality of dielectric film layers with different refractive indexes, and the defect layer is arranged between the alternately arranged dielectric film layers; the device utilizes the defect layer to regulate and control the photon energy band, so that the target working wavelength can be in the range of the photon energy band instead of the photon forbidden band. According to the spatial frequency spectrum filtering function of the photonic crystal multilayer film, high-frequency diffracted waves of the same order efficiently pass through the photonic crystal multilayer film, and can break through a larger working distance and be transmitted to the photosensitive layer to form a super-resolution array pattern with high light field intensity characteristics. In practical production, the photoetching device with the large working distance has wider application range and can improve the service life of the photoetching device.
Description
Technical Field
The invention relates to the technical field of super-resolution lithography, in particular to a large-working-distance super-resolution lithography device containing a defect photonic crystal and a method thereof.
Background
The contemporary society is an information society, chips are in a very important position in the information society, and the photolithography technique is one of the most important production techniques in the modern semiconductor industry, and has become one of the most important projects in our country. Generally, the resolution of conventional lithographic devices can only reach half wavelength due to the diffraction limit of light. This is because an evanescent wave capable of transmitting a fine structure fails to be transmitted to the imaging plane together with a propagating wave, so that high-frequency information including a mask fine structure fails to participate in imaging. Therefore, many photolithographic techniques have been developed and developed to break through the diffraction limit and obtain small-sized patterns. In the near-field lithography technology, since a high-frequency evanescent wave can be used, super-resolution lithography beyond the diffraction limit can be realized.
Recently, a technology for generating a deep sub-wavelength super-resolution lithography pattern by coupling a high-frequency evanescent wave with surface plasma excited at a metal-dielectric interface has attracted wide attention. Surface plasmons are a special electromagnetic field pattern confined to a metal surface. Although this kind of surface wave can generate evanescent wave, the device contains a metal film layer, and the problems of high metal loss, low light transmittance and the like cause extremely fast attenuation of light intensity, which leads to overlong exposure time. Even if the photosensitive layer is directly contacted with the metal mask in plasma photoetching, the depth of the photoetching pattern is shallow due to the characteristic that the evanescent wave is exponentially attenuated in the propagation direction. In addition, in practical production, it is necessary to avoid direct contact between the lithographic device and the photosensitive material, which is related to the lifetime of the lithographic device. However, the air working distance of plasma-based lithography systems is extremely short (less than 30 nm), which severely hampers the development and application of surface plasma lithography. The photonic crystal is an artificial microstructure formed by periodically arranging medium materials with different refractive indexes, and has higher light transmission efficiency. Moreover, the specific photonic band gap can control the propagation of light in the photonic crystal, and can also be used for the research of super-resolution lithography devices, but the working distance of the photonic band gap still needs to be improved.
Disclosure of Invention
In view of the above, the present invention provides a large-working-distance super-resolution lithography device based on a defect-containing photonic crystal and a method thereof, wherein the device utilizes a defect-containing photonic crystal formed by a dielectric multilayer film, and realizes effective transmission of a high-frequency evanescent wave through a working gap layer, and a deep sub-wavelength periodic pattern is formed on a photosensitive layer.
In order to achieve the purpose, the invention provides the following technical scheme:
the large-working-distance super-resolution lithography device based on the photonic crystal with the defects at least comprises a photonic crystal structure layer, wherein the photonic crystal structure layer is at least provided with a defect layer for regulating and controlling a photonic band gap.
Further, the photonic crystal structure layer comprises a plurality of dielectric film layers with different refractive indexes which are alternately arranged, and the defect layer is arranged between the alternately arranged dielectric film layers.
Furthermore, the thicknesses of the same medium in the photonic crystal structure layer are equal, and the thicknesses of all the layers are 10 nm-100 nm; or
The refractive index of the defect layer is between that of the dielectric film layer material.
Further, the dielectric film layer material in the photonic crystal structure layer is MgF 2 、Si 3 N 4 、、GaN、AlN、Al 2 O 3 、TiO 2 、SiO 2 Any one of the media.
Further, a planarization film layer, a grating mask layer and a transparent substrate layer are arranged on the photonic crystal structure layer, and a working gap layer, a photosensitive layer and a substrate layer are arranged below the photonic crystal structure layer.
Further, the photonic crystal structure layer is prepared by alternately depositing three dielectric materials with different refractive indexes on the planarization film layer through a physical vapor deposition method.
Further, the photonic crystal structure layer comprises a first layer of film, a second layer of film and a third layer of film which are alternately arranged; the first layer film and the second layer film form a periodic film structure in the photonic crystal, and the third layer film is a defect layer structure and is positioned in the middle of the periodic film structure of the photonic crystal.
Further, the grating mask layer is a periodic pattern mask layer formed by a nano slit or hole array; or the material of the grating mask layer is Au, al, cr or TiO 2 Or SiO 2 Any one of (a) to (b); or the arrangement period of the nano slit or hole array structure is 40 nm-400 nm, and the duty ratio is 0.1-0.9; or the transparent substrate layer is made of inorganic glass, fused quartz, organic glass or transparent plastic; or the material of the planarization film layer is PMMA or curing glue; or the working gap layer is any one of air, water or oil, and the thickness is 0 nm-200 nm.
The invention provides a large-working-distance super-resolution photoetching method based on a photonic crystal containing defects, which comprises the following steps of:
preparing a mask; flattening the mask layer; depositing a defect-containing photonic crystal multilayer film dielectric layer; preparing a photosensitive layer on a substrate; placing the photoetching device and the photosensitive layer in parallel, and controlling the working distance through instrument equipment; the S-polarized illumination light is exposed by vertical incidence from one side of the mask layer.
Furthermore, the deposited defect-containing photonic crystal multilayer film dielectric layer is formed by alternately arranging a plurality of dielectric film layers with different refractive indexes, wherein the defect layer is arranged between the alternately arranged dielectric film layers.
The invention has the beneficial effects that:
the invention provides a large-working-distance super-resolution photoetching device and a method thereof. The device transmits high-frequency evanescent waves to the photosensitive layer under the condition of large working distance to form a deep sub-wavelength photoetching pattern with high light field intensity and high resolution characteristics, so that diffraction limit constraint is broken through, the light transmission efficiency is greatly improved, the working distance of a near-field photoetching device is expanded, the device is a super-resolution photoetching device with large working distance, the service life of the photoetching device is prolonged, and the production cost is reduced.
The photoetching method provided by the invention can utilize the photonic crystal to transmit evanescent waves. Compared with a metal film layer, the loss of the medium film layer is low, and stronger light intensity can be generated in the photosensitive layer. The super-resolution photoetching device uses the medium film layer, so that the manufacturing cost of the photoetching device is greatly reduced, and the light intensity in photoresist in a photoetching system is enhanced. In practical production, such a lithographic device is advantageous for reducing the exposure time.
The device utilizes the defect layer to regulate and control the photon energy band, so that the target working wavelength can be in the photon energy band range instead of the photon forbidden band. According to the spatial frequency spectrum filtering function of the photonic crystal multilayer film, high-frequency diffracted waves of the same order efficiently pass through the photonic crystal multilayer film, and can break through a larger working distance and be transmitted to the photosensitive layer to form a super-resolution array pattern with high light field intensity characteristics. In practical production, the photoetching device with a large working distance has wider application range and can improve the service life of the photoetching device.
Due to the defect layer introduced into the periodically arranged photonic crystal multilayer film structure, the periodic structure of the photonic crystal is broken, the energy band of the photonic crystal can be adjusted, and more evanescent waves pass through the photonic crystal film layer. The transmission efficiency of evanescent waves can be obviously improved by designing the photoetching device based on the photonic crystal, so that the working distance of the photoetching device is expanded.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
In order to make the purpose, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
FIG. 1 is a schematic structural diagram of an embodiment;
FIG. 2 is a flow chart of an example experiment;
FIG. 3 is a photonic band diagram of a photonic crystal without a defect layer and a photonic crystal with a defect layer in examples;
FIG. 4 is a graph of the Optical Transfer Function (OTF) of the multilayer film structure of the photonic crystal with and without a defect layer in the examples;
FIG. 5 is a diagram showing the simulation effect of the lithography structure composed of the photonic crystal with the defect layer and the photonic crystal without the defect layer in the embodiment.
In the figure: 1-a transparent substrate layer; 2-a grating mask layer; 3-planarizing the film layer; 4-a photonic crystal structure layer; 41. a first membrane layer; 42. a second film layer; 43. a third film layer; 5-a working gap layer; 6-a photosensitive layer; 7-substrate layer.
Detailed Description
The present invention is further described with reference to the following drawings and specific examples so that those skilled in the art can better understand the present invention and can practice the present invention, but the examples are not intended to limit the present invention.
Example 1
As shown in fig. 1, in the large-pitch super-resolution lithography device based on photonic crystals with defects provided in this embodiment, a transparent substrate 1, a grating mask layer 2 formed by a nano-slit or hole array, a planarization film layer 3, and a photonic crystal structure layer 4 are sequentially disposed from top to bottom; the photonic crystal structure layer adopts a multilayer film structure, and a working gap layer 4 is arranged below the photonic crystal structure layer; below the working gap layer there is arranged a photosensitive layer 2 and a backing layer 1.
The transparent substrate layer 1 is made of inorganic glass, fused quartz, organic glass or transparent plastic.
The mask layer 2 is a periodically arranged nano slit or hole array structure, and the mask layer 2 is made of Au, al, cr and TiO 2 Or SiO 2 A medium; the arrangement period of the nano slit or hole array structure is 40 nm-400 nm, and the duty ratio is 0.1-0.9.
The material of the planarization film layer 3 is PMMA or curing glue.
The photonic crystal structure layer 4 is formed by alternately arranging two dielectric film layers with different refractive indexes. And a defect layer is arranged in the film layer to break the structure of the periodic medium film layer arrangement.
In the one-dimensional photonic crystal, the defect layer is a dielectric film layer for breaking the original periodic structure, the refractive index of the dielectric film layer is different from that of the original photonic crystal film layer, and when photons are transmitted to the dielectric film layer, new energy bands are inserted into the photon energy bands, so that more high-frequency evanescent waves can pass through the multilayer film structure of the photonic crystal.
The refractive indexes of the periodic arrangement are very obviously different, and the material of the dielectric film layer is MgF 2 、Si 3 N 4 、GaN、AlN、Al 2 O 3 、TiO 2 Or SiO 2 A medium. The refractive index of the defect layer should be between that of the two materials of the periodic film layer, and the material of the film layer is Al 2 O 3 、ZrO 2 、Ta 2 O 5 。
In the photonic crystal structure layer 4, the thicknesses of the same medium are equal, the thicknesses of different mediums are equal or unequal, and the thicknesses of all the film layers are 10 nm-100 nm. The thickness of the defect layer is 10 nm-100 nm.
The photonic crystal multilayer film 4 is formed by alternately arranging two film layers with different refractive indexes, wherein the film layer is made of MgF 2 、Si 3 N 4 、、GaN、AlN、Al 2 O 3 、TiO 2 Or SiO 2 A medium.
The working gap layer 5 is air, water or oil, and the thickness is 0 nm-200 nm;
the photosensitive layer 6 is photoresist, and the thickness is 5 nm-500 nm;
the substrate layer 7 is made of glass, quartz, silicon wafers or PET.
The working process of the device of the embodiment is as follows: and uniformly irradiating the transparent substrate layer by using an S-polarized plane wave light source, enabling plane light waves to act on a grating mask layer of the nano slit or hole array structure, exciting diffracted waves with different wave vector characteristics, transmitting the diffracted waves to a photonic crystal multilayer film structure containing a defect layer after passing through a flattening film layer, further passing through a working gap layer, and finally forming a super-resolution interference pattern on the photosensitive layer.
The large-working-distance super-resolution lithography method based on the photonic crystal with defects provided by the embodiment is shown in fig. 2 as a flow chart, and mainly comprises the following steps:
(a) Cleaning a substrate as a substrate, and depositing a medium film layer on the substrate;
(b) Manufacturing a mask plate;
(c) Flattening the structural graph of the mask layer;
(d) Depositing a dielectric multilayer film structure over the planarizing film layer;
(e) Cleaning a substrate as a base, and preparing a photosensitive material on the substrate;
(f) Placing the photoetching device and the photosensitive layer substrate in parallel, and controlling the working distance through instrument equipment;
(g) Exposing the S-polarized illuminating light from one side of the mask layer by vertical incidence;
the device transmits high-frequency evanescent waves to the photosensitive layer under the condition of large working distance, so that a deep sub-wavelength photoetching pattern with high light field intensity and high resolution characteristic is formed, diffraction limit constraint is broken through, the light transmission efficiency is greatly improved, and the working distance is expanded.
The device solves the problem that the working distance of the near-field-based super-resolution photoetching device is too short, and the super-resolution photoetching device is constructed by utilizing the photonic crystal containing the defect layer, so that a super-resolution interference photoetching pattern with deep sub-wavelength scale can be obtained under the condition of large working distance. Defect modes are introduced into conventional photonic crystals to allow more of the desired evanescent wave to pass through the photonic crystal.
Example 2
As shown in fig. 1, the device of the present embodiment sequentially arranges, from top to bottom, a photon transparent substrate layer 1, a grating mask layer 2 with a nano-slit or hole array structure, a planarization film layer 3, and a photonic crystal multilayer film; the photonic crystal structure layer 4 adopts a photonic crystal multilayer film structure containing a defect layer.
A working gap layer 5, a photosensitive layer 6 and a substrate layer 7 are arranged below the photonic crystal structure layer 4; there is an air working distance between the photosensitive layer 6 and the photonic crystal structure layer 4, and the air distance is approximately 100nm.
The transparent substrate layer 1 is made of inorganic glass, fused quartz, organic glass or transparent plastic, needs a material with certain hardness and difficult deformation, and has high transmittance to ultraviolet light and visible light.
The grating mask layer 2 is a periodic mask grating, belongs to a nano slit or hole array structure, and is made of Au, al, cr and other metals or TiO 2 、SiO 2 And dielectric materials; the arrangement period of the nano slit or hole array structure is 40 nm-400 nm, and the duty ratio is 0.1-0.9. The mask grating is formed by depositing a mask material on the substrate layer 1 by a physical vapor deposition method to form a film layer, and then preparing a nano slit or hole array structure by using a traditional photoetching process or an electron beam direct writing and focused ion beam direct writing process.
The material of the planarization film layer 3 is PMMA, curing adhesive and the like, and the thickness can be 1 nm-50 nm. The function of the planarization film layer is to fill and level the mask gaps, and the planarization film layer is formed by coating PMMA or curing glue on the mask layer 6 and curing the PMMA or the curing glue in a heating or light irradiation mode.
The photonic crystal structure layer 4 containing the defect layer is prepared by alternately depositing three dielectric materials with different refractive indexes on the planarization film layer 3 through a physical vapor deposition method, the structural form is shown in fig. 1, the first layer film 41 and the second layer film 42 form a periodic film layer structure in the photonic crystal, and the third layer film 43 is a defect layer structure and is positioned in the middle of the periodic film layer structure of the photonic crystal. The total number of the photonic crystal film layers is 13. The film layer material includes, but is not limited to, mgF 2 、Si 3 N 4 、GaN、AlN、Al 2 O 3 、TiO 2 、SiO 2 、ZrO 2 The film thickness of the same medium is equal, the film thickness of different mediums can be equal or unequal, and the film thickness can be 10 nm-100 nm. The refractive indices of the different materials are not equal.
The function of the photonic crystal structure layer 4 is that when the incident light irradiates the mask layer 2, part of the light of the order is reflected due to total reflection, and part of the light of the order passes through the photonic crystal, so that the photonic crystal can selectively pass through the positive and negative diffraction light of the n-order grating, and n is the diffraction light order excited by the mask grating.
The photosensitive layer 6 is a photosensitive material layer which is photosensitive to incident light, and the thickness is 5 nm-500 nm; the refractive index of the substrate 1 needs to be smaller than that of the photoresist in order for the light to be totally reflected back into the photoresist, enhancing the light intensity in the photoresist.
The principle of the device provided by the embodiment is as follows: when the plane wave beam irradiates the nano slit or hole array grating of the mask layer 2, the light generates different transverse wave vectors due to the diffraction effect of the grating:
k x ＝nk 0 sinθ+m(λ/P)k 0 ，
wherein k is 0 Is free space wave vector, n is refractive index of the mask layer substrate, theta is incident angle, P is grating period, lambda is incident light wavelength, and m is diffraction order.
The defect layer can regulate the photonic band gap, so that the required working wavelength is within the energy band range, and the high-frequency wave vector can be enhanced. Moreover, the photonic crystal multilayer film structure containing the defects has a function of filtering and transmitting diffracted waves, so that only the diffracted waves in a specific wave vector range pass through. Finally, two beams of high-frequency evanescent waves form a super-resolution interference pattern on the photosensitive layer, wherein the pattern period is as follows:
p＝P/(2m)。
by adjusting the geometric parameters (including the total number of the film layers which are alternately arranged, the film thickness and the film thickness ratio) and the material parameters (including the refractive index and the relative refractive index difference) of the photonic crystal multilayer film, the selective transmission of evanescent waves of different spatial frequency spectrums can be realized, and more adjustment degrees of freedom are provided. Moreover, the photonic crystal multilayer film has lower transmission loss, so that the pattern of the photosensitive layer has higher light field intensity, and the exposure time can be shortened. In addition, the filtering transmission of a single diffraction order reduces the influence of stray waves. Therefore, the invention has the advantages of simple structure, flexible use, high efficiency, low cost and the like.
Example 3
This embodiment is shown in FIG. 1: by usingS polarized light with an incident wavelength of 193nm and an incident angle of 0 degree; the transparent substrate layer 1 is a glass substrate; the mask layer 2 is a one-dimensional slit array Al mask with the period of 128nm and the thickness of 30nm; the material of the planarization film layer 3 is PMMA, and the thickness is 20nm; the total number of the film layers of the photonic crystal structure layer is 13, and the first film layer 41 is SiO 2 A dielectric film layer with a dielectric constant of 2.76 and a thickness of 26nm, and a second film layer 42 of TiO 2 A dielectric film layer with a dielectric constant of 8.24 and a thickness of 14nm; the third film 43 is Al 2 O 3 The dielectric film layer has a dielectric constant of 3.66 and a thickness of 14nm, the photosensitive layer 6 is made of photoresist, the dielectric constant is 2.89, and the thickness is 100nm. Between the photonic crystal structure layer 4 and the photosensitive layer 6 is an air working distance gap 5 with a dielectric constant of 1 and a thickness of 100nm.
Fig. 3 is a photonic band diagram of a photonic crystal including a defect layer and a photonic crystal not including a defect layer, where (a) in fig. 3 is a photonic crystal band not including a defect layer, and (b) in fig. 3 is a photonic crystal band diagram including a defect layer. In the figure, the black square is the position of the photon forbidden band, and comparing the photon forbidden bands in the two cases, it can be seen that the photonic crystal without the defect layer is at the target wavelength (ω = ω) 0 ) At the edge of the forbidden band. With the addition of the defect layer, the width of the forbidden band is reduced, and more energy bands pass through the forbidden band.
When the S-polarized plane light wave vertically irradiates the slit grating of the mask layer, diffraction waves of different orders are excited. If the 1 st order diffracted wave is defined, the transverse wave vector is k x ＝1.5k 0 . The filter transmission characteristics of the photonic crystal multilayer film can be described by an Optical Transfer Function (OTF) curve, and the OTF is calculated according to a strict coupled wave method (RCWA), the OTF curve of the photonic crystal multilayer film structure at a wavelength of 193nm is shown in fig. 4, (a) is the OTF curve of the photonic crystal without the defect layer, and in fig. 4, (b) is the OTF curve of the photonic crystal with the defect layer. The horizontal axes of the two graphs refer to the transverse wave vector of the light wave transmitted through the film layer, and the vertical axes refer to the transmission coefficient. According to the OTF curve of FIG. 4, the transverse wave vector has a transmission pass band, and the pass band interval is 1.50k 0 ～2.1k 0 High frequency wave vector of (1). For photonic crystals containing defect layers at 1.5k 0 Is greater than the value of a photonic crystal without a defective layer, it indicates that the light at this wavevector is more able to pass through air into the photoresist. Then only the positive and negative 1-order diffracted waves (m = 1) will pass through the photonic crystal multilayer film while the other diffraction orders will be suppressed. Two coherent plane waves are transmitted to the photosensitive layer and interfere with each other to form a deep sub-wavelength one-dimensional periodic pattern. We therefore chose to design a photonic crystal containing a defect layer into a lithography system and from P = P/(2 m) we can derive an interference pattern with a period of 128nm.
FIG. 5 is a simulation verification performed by the simulation software COMSOL Multiphysics based on the finite element electromagnetic calculation method in the present embodiment. The simulated light wave transmission effect is shown in fig. 5, wherein the abscissa x is the length direction of the present embodiment, the ordinate z is the thickness direction of the present embodiment, and the z direction is also the light wave transmission direction. As is clear from fig. 5, the slit array mask excites diffracted waves, and after the diffracted waves are transmitted by filtering of the photonic crystal multilayer film, a pattern period formed in the photosensitive layer is half of a mask grating period, and the light field covers the entire photosensitive layer thickness. In contrast to the simulation of a lithography system without a defect layer photonic crystal structure shown in FIG. 5 (a) and the simulation of a lithography system with a defect layer photonic crystal structure shown in FIG. 5 (b), the photonic crystal with a defect layer in the lithography system can generate a stronger light intensity in the photoresist, and the air working distance of both results is 100nm.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. A large-working distance super-resolution photoetching device based on a photonic crystal containing defects is characterized in that: the photonic crystal structure layer at least comprises a photonic crystal structure layer (4), and at least a defect layer for regulating and controlling a photonic band gap is arranged in the photonic crystal structure layer.
2. The large-pitch super-resolution lithographic device based on a defect-containing photonic crystal of claim 1, wherein: the photonic crystal structure layer (4) is formed by alternately arranging a plurality of dielectric film layers with different refractive indexes, and the defect layer is arranged between the alternately arranged dielectric film layers.
3. The large-pitch super-resolution lithography device based on a photonic crystal containing defects of claim 1, wherein: the thicknesses of the same medium in the photonic crystal structure layer (4) are equal, and the thicknesses of all the layers are 10-100 nm; or
The refractive index of the defect layer is between that of the dielectric film material.
4. The large-pitch super-resolution lithography device based on a photonic crystal containing defects of claim 1, wherein: the dielectric film layer material in the photonic crystal structure layer (4) is MgF 2 、Si 3 N 4 、、GaN、AlN、Al 2 O 3 、TiO 2 、SiO 2 Any one of the media.
5. The large-pitch super-resolution lithography device based on a photonic crystal containing defects of claim 1, wherein: the photonic crystal structure layer is characterized in that a planarization film layer (3), a grating mask layer (2) and a transparent substrate layer (1) are arranged on the photonic crystal structure layer (4), and a working gap layer (5), a photosensitive layer (6) and a substrate layer (7) are arranged below the photonic crystal structure layer (4).
6. The large-pitch super-resolution lithography device based on a photonic crystal containing defects of claim 1, wherein: the photonic crystal structure layer (4) is prepared by alternately depositing three dielectric materials with different refractive indexes on the planarization film layer (3) by a physical vapor deposition method.
7. The large-pitch super-resolution lithography device based on a photonic crystal containing defects of claim 6, wherein: the photonic crystal structure layer (4) comprises a first layer of film (41), a second layer of film (42) and a third layer of film (43) which are alternately arranged; the first layer film (41) and the second layer film (42) form a periodic film structure in the photonic crystal, and the third layer film (43) is a defect layer structure and is positioned in the middle of the periodic film structure of the photonic crystal.
8. The large-pitch super-resolution lithography device based on a photonic crystal containing defects of claim 1, wherein: the grating mask layer is a periodic pattern mask layer formed by a nano slit or a hole array; or the grating mask layer (2) is made of Au, al, cr and TiO 2 Or SiO 2 Any one of (a); or the arrangement period of the nano slit or hole array structure is 40 nm-400 nm, and the duty ratio is 0.1-0.9; or the transparent substrate layer (1) is inorganic glass, fused quartz, organic glass or transparent plastic; or the material of the planarization film layer (3) is PMMA or curing glue; or the working gap layer (5) is any one of air, water or oil, and the thickness is 0 nm-200 nm.
9. A large-working-distance super-resolution photoetching method based on a photonic crystal containing defects is characterized by comprising the following steps: the method comprises the following steps:
(1) Preparing a mask; (2) flattening the mask layer; (4) depositing a defect-containing photonic crystal multilayer film dielectric layer; (5) preparing a photosensitive layer on a substrate; (6) Placing the photoetching device and the photosensitive layer in parallel, and controlling the working distance through instrument equipment; (7) The S-polarized illumination light is exposed by vertical incidence from one side of the mask layer.
10. The large-pitch super-resolution lithography method based on a photonic crystal containing defects according to claim 9, wherein: the deposited defect-containing photonic crystal multilayer film dielectric layer is formed by alternately arranging a plurality of dielectric film layers with different refractive indexes, wherein the defect layer is arranged between the alternately arranged dielectric film layers.
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