CN115825564A - Method and device for acquiring resistance temperature coefficient and storage medium - Google Patents
Method and device for acquiring resistance temperature coefficient and storage medium Download PDFInfo
- Publication number
- CN115825564A CN115825564A CN202211383557.9A CN202211383557A CN115825564A CN 115825564 A CN115825564 A CN 115825564A CN 202211383557 A CN202211383557 A CN 202211383557A CN 115825564 A CN115825564 A CN 115825564A
- Authority
- CN
- China
- Prior art keywords
- resistance
- value
- temperature
- data
- values
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Measurement Of Resistance Or Impedance (AREA)
Abstract
The application provides a method, a device and a storage medium for acquiring a resistance temperature coefficient, which relate to the technical field of testing, and the method comprises the following steps: heating or cooling the resistor to be detected; acquiring multiple groups of measurement data of a resistor to be measured; each group of measurement data is acquired according to a preset period; each group of measurement data comprises M temperature values and M resistance values; m is an integer greater than or equal to 2; determining whether the resistor to be measured is in a stable state or not when the measurement data is acquired based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values; the resistance reference value is the natural logarithm of the resistance value; determining the resistance temperature coefficient of the resistor to be tested based on the obtained multiple groups of stable data; the stable data is measurement data obtained when the resistance to be measured is in a stable state. The method is suitable for the process of measuring the temperature coefficient of the resistor and is used for improving the measurement precision.
Description
Technical Field
The present disclosure relates to the field of testing technologies, and in particular, to a method and an apparatus for obtaining a temperature coefficient of resistance, and a storage medium.
Background
Temperature Coefficient of Resistance (TCR) is the average relative change in resistance over a range of temperatures with a 1 degree celsius change in temperature (deg.c).
TCRs play an important role in industrial applications. For example, in a semiconductor integrated circuit, TCR can reflect the effect of the resistance of a semiconductor device on the operation of the device at different temperatures, thereby affecting the improvement and enhancement of the device performance.
Therefore, how to obtain a TCR with high measurement accuracy is a technical problem that needs to be solved urgently at present.
Disclosure of Invention
The application provides a method and a device for acquiring a resistance temperature coefficient and a storage medium, which can improve the measurement precision of TCR.
In order to achieve the purpose, the following technical scheme is adopted in the application:
in a first aspect, the present application provides a method for obtaining a temperature coefficient of resistance, including: heating or cooling the resistor to be measured; acquiring a plurality of groups of measurement data of electroplating to be detected; each group of measurement data is acquired according to a preset period; each group of measurement data comprises M temperature values and M resistance values; m is an integer greater than or equal to 2; determining whether the resistor to be measured is in a stable state or not when each group of measurement data is acquired based on the standard deviation of the M temperature values and/or the M resistance reference values; the resistance reference value is the natural logarithm of the resistance value; determining the resistance temperature coefficient of the resistor to be tested based on the obtained multiple groups of stable data; the stable data is measurement data obtained when the resistance to be measured is in a stable state.
The method and the device can screen stable data acquired when the resistor to be measured is in the stable state at different temperature points by setting the judgment condition for judging whether the resistor to be measured is in the stable state, and can improve the measurement precision of the TCR by utilizing the stable data acquired in the stable state.
In addition, the fluctuation levels of the resistance values at different temperatures in the actual measurement process may show differences among orders of magnitude, and even if the resistance values are the same in temperature difference, the differences among the resistance values may be larger, so that the measurement accuracy of the TCR is influenced. Whether the resistance value of the resistor to be measured is stable or not is judged by calculating the natural logarithm of the resistance value, the resistance value fluctuation at different temperatures can be pulled to the same level, and the judgment accuracy rate can be prevented from being influenced by the difference of the resistance value fluctuation level when the resistance value of the resistor to be measured is judged to be stable or not, so that the TCR measurement accuracy rate is improved.
In one possible implementation manner, determining whether the resistance to be measured is in a stable state when each group of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values includes: determining standard deviations of the M temperature values; and when the standard deviation of the M temperature values is smaller than a first threshold value, determining that the resistor to be detected is in a stable state.
In another possible implementation manner, determining whether the resistance to be measured is in a stable state when each group of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values includes: determining M resistance reference values according to respective natural logarithms of the M resistance values; determining standard deviations of the M resistance reference values; and when the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be measured is in a stable state.
In another possible implementation manner, determining whether the resistance to be measured is in a stable state when each group of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values includes: determining standard deviations of the M temperature values; determining M resistance reference values according to respective natural logarithms of the M resistance values; determining standard deviations of the M resistance reference values; and when the standard deviation of the M temperature values is smaller than a first threshold value and the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be detected is in a stable state.
Optionally, the plurality of sets of stable data includes first data and second data; the first data and the second data are any two different groups of stable data in the multiple groups of stable data; based on the stable data of multiunit, confirm the resistance temperature coefficient of the resistance that awaits measuring, include: determining the resistance temperature coefficient of the resistor to be tested according to the quotient of the first value and the second value; the first value is the difference between the logarithm of the first resistance value and the logarithm of the second resistance value; the first resistance value is an average value of M resistance values in the first data; the second resistance value is an average value of M resistance values in the second data; the second value is the difference between the first temperature value and the second temperature value; the first temperature value is the average value of M temperature values in the first data; the second temperature value is an average value of the M temperature values in the second data.
Optionally, the relationship between the first data, the second data, and the temperature coefficient of resistance of the resistor to be measured satisfies the following formula:
wherein, TCR represents the resistance temperature coefficient of the resistance to be measured; r T Representing a first resistance value; r T0 Represents a second resistance value; t represents a first temperature value; t is 0 Representing a second temperature value.
Optionally, determining the temperature coefficient of resistance of the resistor to be measured based on multiple sets of stable data includes: performing linear fitting on the multiple groups of stable data to obtain a TCR curve graph; the abscissa of the TCR plot is the temperature value; the ordinate of the TCR curve graph is the natural logarithm of the resistance value; and determining the resistance temperature coefficient of the resistor to be tested based on the slope of the TCR curve graph.
In a second aspect, the present application provides an apparatus for obtaining a temperature coefficient, the apparatus comprising: the device comprises a temperature control module, a measurement module and a processing module. And the temperature control module is used for heating or cooling the resistance to be measured. The measuring module is used for acquiring multiple groups of measuring data of the resistor to be measured; each group of measurement data is acquired according to a preset period; each group of measurement data comprises M temperature values and M resistance values; m is an integer greater than or equal to 2. The processing module is used for determining whether the resistor to be measured is in a stable state or not when each group of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values; the resistance reference value is the natural logarithm of the resistance value; determining the resistance temperature coefficient of the resistor to be tested based on the obtained multiple groups of stable data; the stable data is measurement data obtained when the resistance to be measured is in a stable state.
Optionally, the processing module is specifically configured to determine a standard deviation of the M temperature values; when the standard deviation of the M temperature values is smaller than a first threshold value, determining that the resistor to be detected is in a stable state;
optionally, the processing module is specifically configured to determine M resistance reference values according to respective natural logarithms of the M resistance values; determining standard deviations of the M resistance reference values; when the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be detected is in a stable state;
optionally, the processing module is specifically configured to determine a standard deviation of the M temperature values; determining M resistance reference values according to respective natural logarithms of the M resistance values; determining standard deviations of the M resistance reference values; when the standard deviation of the M temperature values is smaller than a first threshold value and the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be detected is in a stable state;
optionally, the plurality of sets of stable data includes first data and second data; the first data and the second data are any two different groups of stable data in the multiple groups of stable data; the processing module is specifically used for determining the resistance temperature coefficient of the resistor to be detected according to the quotient of the first value and the second value; the first value is the difference between the logarithm of the first resistance value and the logarithm of the second resistance value; the first resistance value is an average value of M resistance values in the first data; the second resistance value is an average value of M resistance values in the second data; the second value is the difference between the first temperature value and the second temperature value; the first temperature value is the average value of M temperature values in the first data; the second temperature value is the average value of the M temperature values in the second data;
optionally, the relationship between the first data, the second data, and the temperature coefficient of resistance of the resistor to be measured satisfies the following formula:
wherein, TCR represents the resistance temperature coefficient of the resistance to be measured; r T Representing a first resistance value; r T0 Represents a second resistance value; t represents a first temperature value; t is 0 Representing a second temperature value;
optionally, the processing module is specifically configured to perform linear fitting on the multiple sets of stable data to obtain a TCR curve graph; the abscissa of the TCR plot is the temperature value; the ordinate of the TCR plot is the natural logarithm of the resistance value; and determining the resistance temperature coefficient of the resistor to be tested based on the slope of the TCR curve graph.
In a third aspect, the present application provides a readable storage medium comprising: software instructions; when the software instructions are run in the temperature coefficient of resistance obtaining apparatus, the temperature coefficient of resistance obtaining apparatus is caused to implement the method according to the first aspect.
In a fourth aspect, the present application provides a chip, which includes a processor and an interface, where the processor is coupled to a memory through the interface, and when the processor executes a computer program in the memory or an obtaining device of the temperature coefficient of resistance to execute instructions, the method of the first aspect is executed.
The beneficial effects of the second to fourth aspects may be described with reference to the first aspect, and are not described again.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic composition diagram of an apparatus for obtaining a temperature coefficient of resistance according to an embodiment of the present disclosure;
fig. 2 is a schematic flowchart of a method for obtaining a temperature coefficient of resistance according to an embodiment of the present disclosure;
fig. 3 is a logic diagram for determining the stability of the surface temperature of the resistor to be measured according to the embodiment of the present application;
fig. 4 is a logic diagram for determining a stable resistance value of a resistor to be tested according to an embodiment of the present disclosure;
fig. 5 is a schematic flowchart of another method for obtaining a temperature coefficient of resistance according to an embodiment of the present disclosure;
fig. 6 is a TCR graph provided in accordance with an embodiment of the present disclosure.
Detailed Description
In the following, the terms "first", "second" and "third", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second" or "third", etc., may explicitly or implicitly include one or more of the features.
TCR is the average relative change in resistance (i.e., the ratio of the increase in resistance to the original value) in Parts Per Million (PPM)/deg.c over a certain temperature range at a temperature of 1 deg.c. TCR is an index of resistance variation with temperature, and the relationship between resistance and temperature satisfies the following formula (1) within a certain temperature range.
R T ＝R T0 [1+α(T-T 0 )+β(T-T 0 ) 2 ]Formula (1)
In the formula (1), R T The resistance value of the measured resistance at a temperature (temperature point) of T is expressed in ohms (Ω). R is T0 Denotes a temperature (temperature point) of T 0 The resistance value of the measured resistor is expressed in ohm (omega). Alpha represents the temperature coefficient of the primary resistance in deg.C -1 . Beta represents the secondary resistance temperature coefficient in deg.C -2 。
In practical applications, the primary temperature coefficient of resistance α is generally adopted as TCR, and in this case, the above formula (1) may be modified to the following formula (2).
In the formula (2), the temperature is independent variable, the resistance value of the measured resistor is dependent variable, (T-T) 0 ) Is the variation value of the independent variable.
Based on the principle of the formula (2), the current measurement method of the TCR is to obtain resistance values at different temperatures by heating or cooling the resistor to be measured, fit a curve between the resistance values and the temperatures, and obtain the value of the TCR according to the curve between the resistance values and the temperatures.
The current methods of measuring TCRs suffer from several problems:
1. also based on the principle of the above equation (2), the denominator (T-T) is relative to the variation of the numerator 0 ) Will cause greater test errors.
2. During TCR test, the test temperature points are many, and the temperature span is large. Because the temperature span is large, and the resistance fluctuation caused by the temperature fluctuation is different at different temperatures, even if the temperature difference is the same, the corresponding resistance value fluctuation at different temperatures is larger, even by several orders of magnitude.
3. Under different temperatures, the probe for measuring the resistance value of the measured resistor expands with heat and contracts with cold, so that the contact pressure between the probe and the measured resistor changes, and the resistance value of the measured resistor is influenced. Therefore, when the resistance value is measured, the probe does not always make good contact with the measured resistance, and the resistance value is not always accurately acquired.
Therefore, it is desirable to improve the measurement accuracy of TCR.
Based on this, the embodiment of the application provides a method and a device for acquiring a resistance temperature coefficient and a storage medium, which can screen out measurement data in a stable state by judging whether a resistance to be measured is in the stable state, determine the resistance temperature coefficient by using the measurement data in the stable state, and improve measurement accuracy.
The following description is made with reference to the accompanying drawings.
Fig. 1 is a schematic composition diagram of an apparatus for obtaining a temperature coefficient of resistance according to an embodiment of the present disclosure. As shown in fig. 1, the apparatus 100 for obtaining a temperature coefficient of resistance includes: a temperature control module 10, a measurement module 20, and a processing module 30.
The temperature control module 10 is used for heating or cooling the resistance to be measured.
In some embodiments, the temperature control module 10 may include a heating unit and a cooling unit.
The heating unit is used for heating the resistance to be measured.
For example, the heating unit may include a heating control circuit and a heating resistance wire, and the heating control circuit may receive the control signal sent by the processing module 30, perform power amplification on the control signal, and then drive the heating resistance wire to heat the resistance to be measured.
The cooling unit is used for cooling the resistor to be measured.
For example, the temperature reduction unit may be a fan, and the fan may perform air cooling temperature reduction on the resistance to be measured by rotation.
For another example, the cooling unit may include a pipeline through which a refrigerant flows, and the refrigerant may absorb heat of the resistor to be tested through the pipeline to cool the resistor to be tested.
In some embodiments, the temperature control module 10 is specifically configured to heat or cool the resistance to be measured step by step.
For example, taking heating as an example, when the temperature of the resistor to be measured increases by X ℃ (X is a positive number and can be preset by a manager), the temperature control module 10 can keep the resistor to be measured at a constant temperature for a period of time, and after the module to be measured 20 finishes measuring the measurement data, the temperature control module 10 continues to heat the resistor to be measured.
In some embodiments, the temperature control module 10 is specifically configured to heat or cool the resistor to be tested through the heat transfer medium.
For example, the heat transfer medium may be water contained in a beaker, the resistor to be measured may be placed in the water in the beaker, and the temperature control module 10 may heat or cool the resistor to be measured by heating or cooling the water.
For another example, the heat transfer medium may be heat conduction sand, the resistor to be tested may be embedded in the heat conduction sand, and the temperature control module 10 may heat or cool the resistor to be tested by heating or cooling the heat conduction sand.
The measuring module 20 is used for measuring the temperature value and the resistance value of the resistor to be measured.
In some embodiments, the measurement module 20 may include a temperature measurement unit and a resistance measurement unit.
The temperature measuring unit is used for measuring the temperature of the resistor to be measured.
For example, the temperature measuring unit may be a thermometer, a temperature sensor, a temperature detecting circuit, or the like, and the temperature measuring unit may measure the temperature of the resistance to be measured by a patch connected to the thermometer, the temperature sensor, or the temperature detecting circuit and attached to the resistance to be measured.
The resistance measuring unit is used for measuring the resistance value of the resistor to be measured.
For example, the resistance measuring unit may be an ohmmeter, a resistance detection circuit including a wheatstone bridge, a resistance detection circuit including a kell Wen Dianqiao, or the like, and the resistance measuring unit may measure the resistance value of the resistance to be measured by a probe of the ohmmeter or the resistance detection circuit. The examples herein are not intended to be limiting.
The processing module 30 is configured to determine a resistance temperature coefficient of the resistor to be measured according to the temperature value and the resistance value measured by the measuring module 20. The specific process can be described with reference to the following method for obtaining the temperature coefficient of resistance, and is not described herein again.
In some embodiments, the processing module 30 may include a controller and a memory.
And the controller is used for executing the instructions stored in the memory so as to realize the acquisition method of the temperature coefficient of resistance provided by the following embodiments. The controller may be a Central Processing Unit (CPU), a general purpose processor Network (NP), a Digital Signal Processor (DSP), a microprocessor, a microcontroller, a Programmable Logic Device (PLD), or any combination thereof. The controller may also be any other device with processing function, such as a circuit, a device, or a software module, which is not limited by the embodiments of the present application.
The memory is to store instructions. For example, the instructions may be a computer program. Alternatively, the memory may be a read-only memory (ROM) or other types of static storage devices that can store static information and/or instructions, an access memory (RAM) or other types of dynamic storage devices that can store information and/or instructions, an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compact disc, laser disc, optical disc, digital versatile disc, blu-ray disc, etc.), a magnetic disc storage medium or other magnetic storage devices, and the like, which are not limited by the embodiments of the present application.
It should be noted that the memory may exist independently of the controller or may be integrated with the controller. The memory may be located inside the processing module 30 or outside the processing module 30, which is not limited in this embodiment.
The following describes a method for obtaining a temperature coefficient of resistance according to an embodiment of the present application with reference to the accompanying drawings.
The principle of the method involving the calculation of the resistance value will be described first.
Based on the many possible variations of the above equation (2), the applicant, after studying the calculation of the temperature coefficient of resistance, selected the calculation scheme of the following equation (3).
It can be seen that, compared with the formula (2), in the formula (3) after further deformation, the logarithm of the resistance value and the temperature value are in a linear function relationship, and curve fitting is simpler and smaller in error when the logarithm of the resistance value and the temperature value are subjected to curve fitting. Based on the principle of formula (3), the calculation related to the resistance value in the method for obtaining the temperature coefficient of resistance provided by the embodiment of the present application may be replaced by the logarithm of the resistance value.
Fig. 2 is a schematic flow chart of a method for obtaining a temperature coefficient of resistance according to an embodiment of the present application. Alternatively, the method may be executed by the above-mentioned obtaining device of the temperature coefficient of resistance or the processing module 30 or the controller in the device, as shown in fig. 2, and the method includes S101 to S104.
And S101, heating or cooling the resistor to be measured.
The resistor to be measured may be any resistor, such as a wafer resistor, a carbon film resistor, a metal film resistor, a wire-wound resistor, or an integrated resistor. The embodiment of the present application does not limit the specific type of the resistance to be measured. The specific adding or cooling process in S101 may refer to the above-mentioned temperature control module 10, and is not described herein again.
It should be noted that, when the main execution body of the method is the processing module 30 or the controller, the above S101 may be understood that the processing module 30 or the controller heats or cools the resistance to be measured through the temperature control module 10.
S102, obtaining multiple groups of measurement data of the resistor to be measured.
And each group of measurement data is acquired according to a preset period. The preset period may be preset in the resistance temperature coefficient acquisition device by a manager. Each set of measurement data may include M temperature values and M resistance values, M being an integer greater than or equal to 2.
Optionally, as described above, the temperature control module 10 may be specifically configured to heat or cool the resistance to be measured step by step. After the temperature of the resistor to be measured changes by X ℃, the temperature control module 10 can keep the resistor to be measured at a constant temperature and the measurement module 20 can obtain measurement data. Or, the temperature control module 10 may also be specifically configured to continuously heat or cool the resistance to be measured, and the measurement module 20 may continuously obtain measurement data, and select a part of the measurement data near a plurality of preset temperature points for calculation. The embodiments of the present application do not limit this.
Alternatively, the preset period may take 10 seconds, 20 seconds, or the like.
It should be understood that, in an actual measurement environment, the temperature changes relatively slowly, and when the preset period is relatively small, for example, the preset period is 1 millisecond (ms), and under the condition that the number of the collected measurement data sets is certain, the collected measurement data is substantially the same in a short period of time, and it may not be possible to judge whether the resistance to be measured is in a stable state. The embodiment of the application sets up to 10 seconds or 20 seconds etc. through presetting the cycle, and it is great to preset the cycle, and temperature and resistance variation range span are great, easily judge whether the resistance that awaits measuring is in stable state.
Alternatively, M may take 200 or 300, etc.
It should be understood that, in an actual measurement environment, when the acquired measurement data is less, the change trend of the temperature value and the resistance value in a certain time period cannot be sufficiently displayed, and it is also impossible to determine whether the resistance to be measured is in a stable state in the time period. According to the embodiment of the application, the number of the obtained temperature values and resistance values is set to be 200 or 300, and the like, so that enough measurement data are obtained, and whether the resistance to be measured is in a stable state or not is judged conveniently.
Exemplarily, as described above, taking an example that the temperature measuring unit measures the temperature of the resistor to be measured through the patch connected to the thermometer, the temperature sensor, or the temperature detection circuit and attached to the resistor to be measured, assuming that the preset period is 10 seconds, and M is 200, the patch may include one, and the obtaining device may obtain one temperature value every 10 seconds through one patch until 200 temperature values are obtained; or, the patch may include a plurality of patches, for example, 4 patches, and the obtaining device may obtain four temperature values every 10 seconds through the 4 patches until 200 temperature values are obtained.
For example, as described above, taking the resistance measuring unit to measure the resistance value of the resistor to be detected through the probe of the ohmmeter or the resistance detection circuit as an example, assuming that the preset period is 10 seconds, and M is 200, the probe may include one group, and the obtaining device may obtain one resistance value every 10 seconds through the group of probes until 200 resistance values are obtained; or, the probe may include multiple groups, for example, 4 groups, and the obtaining device may obtain four resistance values every 10 seconds through 4 groups of probes until 200 temperature values are obtained.
S103, determining whether the resistance to be measured is in a stable state or not when each group of measurement data is acquired based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values.
Wherein the resistance reference value is a natural logarithm of the resistance value.
In one possible implementation, the stable state may be a stable surface temperature of the resistor to be measured. In this case, S103 may specifically include: determining standard deviations of the M temperature values; and when the standard deviation of the M temperature values is smaller than a first threshold value, determining that the resistor to be detected is in a stable state.
The first threshold may be preset by a manager, for example, the first threshold may be 0.04 or 0.05, and the like. The specific value of the first threshold is not limited in the embodiments of the present application.
Optionally, when the standard deviation of the M temperature values is greater than the first threshold, it may be determined that the resistance to be measured is in an unstable state.
It should be noted that, when the standard deviation of the M temperature values is equal to the first threshold, it may be determined that the resistance to be measured is in a stable state or in an unstable state. The embodiments of the present application do not limit this.
Fig. 3 is a logic diagram for determining the surface temperature stability of the resistor to be measured according to the embodiment of the present application. As shown in fig. 3, for a certain set of measurement data, the process of determining that the surface temperature of the resistor to be measured is stable when the set of measurement data is acquired may specifically include S201 to S204.
S201, obtaining M temperature values.
S201 may refer to S102 described above, and is not described herein again.
S202, calculating standard deviations of the M temperature values.
S203, judging whether the standard deviation of the M temperature values is smaller than a first threshold value.
If yes, executing S204; if not, the process returns to S201.
And S204, determining that the surface temperature of the resistor to be measured is stable.
In another possible implementation, the stable state may be that the resistance value of the resistor to be measured is stable.
Based on the principle of the above formula (3), the applicant further modifies the formula (3) after theoretical research and experimental verification to obtain the following formula (4).
When the denominator part on the right side of the equal sign in the formula (4) is replaced with the designed value or theoretical value of TCR, ln (R) can be replaced T ) The fluctuation of the resistance value of (a) is translated into a fluctuation of the temperature. In the case where the design value or theoretical value of TCR is unknown, a constant a may be used instead of the design value or theoretical value of TCR, and the above equation (4) may be modified to the following equation (5).
ln(R T )-ln(R T0 )＝A(T-T 0 ) Formula (5)
As can be seen from equation (5), although the fluctuation levels (or amplitudes) of the resistance values at different temperatures in the actual measurement process are different, for example, the difference between the resistance values at about 1 temperature point may be 10 kilo-ohms (k Ω), the difference between the resistance values at about 2 temperature points may be 1000k Ω, and the fluctuation levels of the resistance values are greatly different. According to the function image of the natural logarithm, the increasing trend of the dependent variable is more and more gentle along with the increase of the independent variable, and the condition that the fluctuation level of the resistance value shows the difference between orders of magnitude can not occur.
In this case, S103 may specifically include: determining M resistance reference values according to respective natural logarithms of the M resistance values; determining standard deviations of the M resistance reference values; and when the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be measured is in a stable state.
Wherein the second threshold value may be preset by a manager. The second threshold may be the same as the first threshold, or may be different. For example, the second threshold may be 0.04, 0.05, or the like. The embodiment of the present application does not limit the specific value of the second threshold.
Optionally, when the standard deviation of the M resistance reference values is greater than the second threshold, it may be determined that the resistance to be measured is in an unstable state.
It should be noted that, when the standard deviation of the M resistance reference values is equal to the second threshold, it may be determined that the resistance to be measured is in a stable state or in an unstable state. The embodiments of the present application do not limit this.
Fig. 4 is a logic diagram for determining whether the resistance of the resistor to be tested is stable according to the embodiment of the present application. As shown in fig. 4, for a certain set of measurement data, the process of determining that the resistance value of the resistor to be measured is stable when the set of measurement data is acquired may specifically include S301 to S304.
S301, M resistance values are obtained.
S301 can refer to S102 described above, and is not described herein again.
S302, calculating the standard deviation of the natural logarithm of the M resistance values.
S303, judging whether the standard deviation of the natural logarithm of the M resistance values is smaller than a second threshold value.
If yes, go to S304; if not, the process returns to S301.
S304, determining the resistance value of the resistor to be tested to be stable.
It will be appreciated that the fluctuation levels of the resistance values at different temperatures during the actual measurement process may exhibit differences between orders of magnitude, and even the same temperature difference may result in a larger difference between the resistance values, affecting the measurement accuracy of the TCR. Whether the resistance value of the resistor to be measured is stable or not is judged by calculating the natural logarithm of the resistance value, the resistance value fluctuation at different temperatures can be pulled to the same level, and the judgment accuracy rate can be prevented from being influenced by the difference of the resistance value fluctuation level when the resistance value of the resistor to be measured is judged to be stable or not, so that the TCR measurement accuracy rate is improved.
In yet another possible implementation manner, the stable state may be that the surface temperature of the resistor to be measured is stable and the resistance value is stable. In this case, S103 may specifically include: determining standard deviations of the M temperature values; determining M resistance reference values according to respective natural logarithms of the M resistance values; determining standard deviations of the M resistance reference values; and when the standard deviation of the M temperature values is smaller than a first threshold value and the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be detected is in a stable state.
Optionally, the obtaining device may collect measurement data of a current temperature point, and perform the steady state judgment on the measurement data collected at the current preset temperature point before collecting measurement data of a next preset temperature point.
Fig. 5 is another schematic flowchart of a method for obtaining a temperature coefficient of resistance according to an embodiment of the present disclosure. As shown in fig. 5, the method may include S401 to S408.
S401, acquiring measurement data of a group of resistors to be measured according to a preset period at a first temperature point.
S402, judging whether the standard deviation of the M temperature values in the measurement data is smaller than a first threshold value.
If yes, executing S403; if not, the process returns to S401.
And S403, judging whether the standard deviation of the natural logarithm of the M resistance values in the measurement data is smaller than a second threshold value.
If yes, go to S404; if not, the process returns to S401.
S404, determining stable data at the first temperature point as an average value of M temperature values and an average value of M resistance values in the measurement data.
S405, acquiring measurement data of a group of resistors to be measured according to a preset period at a second temperature point.
S406, judging whether the standard deviation of the M temperature values in the measurement data is smaller than a first threshold value.
If yes, executing S407; if not, the process returns to S405.
S407, judging whether the standard deviation of the natural logarithm of the M resistance values in the measurement data is smaller than a second threshold value.
If yes, go to S408; if not, the process returns to S405.
S408, determining stable data at the second temperature point as an average value of M temperature values and an average value of M resistance values in the measurement data.
By analogy, multiple groups of stable data corresponding to multiple temperature points can be obtained.
And S104, determining the resistance temperature coefficient of the resistor to be measured based on the obtained multiple groups of stable data.
The stable data is measurement data obtained when the resistor to be measured is in a stable state.
In a possible implementation manner, taking the example that the multiple sets of stable data include first data and second data, assuming that the first data and the second data are any two different sets of stable data in the multiple sets of stable data, the S104 may specifically include: and determining the resistance temperature coefficient of the resistor to be measured according to the quotient of the first value and the second value.
Wherein the first value is a difference between a logarithm of the first resistance value and a logarithm of the second resistance value; the first resistance value is an average value of M resistance values in the first data; the second resistance value is an average value of M resistance values in the second data; the second value is the difference between the first temperature value and the second temperature value; the first temperature value is the average value of M temperature values in the first data; the second temperature value is an average value of the M temperature values in the second data.
Alternatively, the relationship between the first data, the second data, and the temperature coefficient of resistance of the resistance to be measured may satisfy the following formula (6).
The beginning and end of equation (6) are also the equations of equation (3) above. R is as defined in the meaning of the parameters in equation (3) T Indicating the resistance value, R, of the measured resistor at a temperature (point of temperature) T T0 Denotes a temperature (temperature point) of T 0 The resistance value of the measured resistor is T as the first temperature value 0 For example, the second temperature value, then R T Can be understood as the first resistance value, R T0 The second resistance value can be understood as the above-mentioned second resistance value.
In another possible implementation manner, S104 may specifically include: performing linear fitting on the multiple groups of stable data to obtain a TCR curve graph; and determining the resistance temperature coefficient of the resistor to be tested based on the slope of the TCR curve graph.
The abscissa of the TCR curve graph is a temperature value, and the ordinate of the TCR curve graph is a natural logarithm of the resistance value.
For example, referring to fig. 6, fig. 6 is a TCR graph provided in the embodiment of the present application, and as shown in fig. 6, the TCR graph basically presents an oblique line, and a slope of the oblique line is a temperature coefficient of resistance of the resistor to be measured.
The embodiment of the application can screen the stable data acquired when the resistance to be measured is in the stable state at different temperature points by setting the judgment condition for judging whether the resistance to be measured is in the stable state, and the measurement precision of the TCR can be improved by utilizing the stable data acquired in the stable state.
The scheme provided by the embodiment of the application is mainly introduced from the perspective of a method. To implement the above functions, it includes hardware structures and/or software modules for performing the respective functions. Those of skill in the art will readily appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as hardware or combinations of hardware and computer software. Whether a function is performed as hardware or computer software drives hardware depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In an exemplary embodiment, the present application further provides a readable storage medium, which includes an execution instruction, when it runs on a temperature coefficient of resistance acquisition device, to make the temperature coefficient of resistance acquisition device execute any one of the methods provided in the foregoing embodiments.
In an exemplary embodiment, the present application further provides a chip, including: the processor is coupled with the memory through the interface, and when the processor executes the computer program in the memory or the resistance temperature coefficient acquisition device to execute the instructions, the processor causes any one of the methods provided by the above embodiments to be executed.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented using a software program, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer-executable instructions. The processes or functions according to the embodiments of the present application are generated in whole or in part when the computer-executable instructions are loaded and executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer executable instructions may be stored on a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, the computer executable instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wire (e.g., coaxial cable, fiber optic, digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.). Computer-readable storage media can be any available media that can be accessed by a computer or can comprise one or more data storage devices, such as servers, data centers, and the like, that can be integrated with the media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid State Disk (SSD)), among others.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "Comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
Although the present application has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations may be made thereto without departing from the spirit and scope of the application. Accordingly, the specification and figures are merely exemplary of the present application as defined in the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the present application. It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
The above description is only an embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions within the technical scope disclosed in the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method for obtaining a temperature coefficient of resistance is characterized by comprising the following steps:
heating or cooling the resistor to be measured;
acquiring multiple groups of measurement data of the resistor to be measured; each group of measurement data is acquired according to a preset period; each group of measurement data comprises M temperature values and M resistance values; m is an integer greater than or equal to 2;
determining whether the resistor to be measured is in a stable state when each group of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values; the resistance reference value is the natural logarithm of the resistance value;
determining the resistance temperature coefficient of the resistor to be tested based on the obtained multiple groups of stable data; the stable data is measurement data obtained when the resistance to be measured is in the stable state.
2. The method according to claim 1, wherein the determining whether the resistance to be measured is in a stable state when each set of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values comprises:
determining a standard deviation of the M temperature values;
and when the standard deviation of the M temperature values is smaller than a first threshold value, determining that the resistor to be tested is in the stable state.
3. The method according to claim 1, wherein the determining whether the resistance to be measured is in a stable state when each set of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values comprises:
determining the M resistance reference values according to respective natural logarithms of the M resistance values;
determining standard deviations of the M resistance reference values;
and when the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be measured is in the stable state.
4. The method according to claim 1, wherein the determining whether the resistance to be measured is in a stable state when each set of measurement data is obtained based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values comprises:
determining a standard deviation of the M temperature values;
determining M resistance reference values according to respective natural logarithms of the M resistance values;
determining standard deviations of the M resistance reference values;
and when the standard deviation of the M temperature values is smaller than a first threshold value and the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be detected is in the stable state.
5. The method according to any one of claims 1-4, wherein the plurality of sets of stable data comprises first data and second data; the first data and the second data are any two different groups of stable data in the multiple groups of stable data; the determining the resistance temperature coefficient of the resistor to be tested based on the multiple groups of stable data comprises:
determining the resistance temperature coefficient of the resistor to be tested according to the quotient of the first value and the second value;
the first value is the difference between the logarithm of the first resistance value and the logarithm of the second resistance value; the first resistance value is an average value of M resistance values in the first data; the second resistance value is an average value of M resistance values in the second data;
the second value is the difference between the first temperature value and the second temperature value; the first temperature value is an average value of M temperature values in the first data; the second temperature value is an average value of M temperature values in the second data.
6. The method of claim 5, wherein the relationship between the first data, the second data, and the temperature coefficient of resistance of the resistance under test satisfies the following equation:
wherein, TCR represents the temperature coefficient of resistance of the resistance to be measured; r T Representing the first resistance value; r T0 Representing the second resistance value; t represents the first temperature value; t is 0 Representing the second temperature value.
7. The method according to any one of claims 1-4, wherein determining the temperature coefficient of resistance of the resistance under test based on the plurality of sets of stable data comprises:
performing linear fitting on the multiple groups of stable data to obtain a TCR curve graph; the abscissa of the TCR curve graph is a temperature value; the ordinate of the TCR curve graph is the natural logarithm of the resistance value;
and determining the resistance temperature coefficient of the resistor to be tested based on the slope of the TCR curve graph.
8. An apparatus for obtaining a temperature coefficient, the apparatus comprising: the device comprises a temperature control module, a measurement module and a processing module;
the temperature control module is used for heating or cooling the resistor to be measured;
the measuring module is used for acquiring multiple groups of measuring data of the resistor to be measured; each group of measurement data is according to a preset period; each group of measurement data comprises M temperature values and M resistance values; m is an integer greater than or equal to 2;
the processing module is used for determining whether the resistor to be measured is in a stable state or not when each group of measurement data is acquired based on the standard deviation of the M temperature values and/or the standard deviation of the M resistance reference values; the resistance reference value is the natural logarithm of the resistance value; determining the resistance temperature coefficient of the resistor to be tested based on the obtained multiple groups of stable data; the stable data is measurement data obtained when the resistance to be measured is in the stable state.
9. The apparatus of claim 8,
the processing module is specifically configured to determine standard deviations of the M temperature values; when the standard deviation of the M temperature values is smaller than a first threshold value, determining that the resistor to be tested is in the stable state;
the processing module is specifically configured to determine the M resistance reference values according to respective natural logarithms of the M resistance values; determining a standard deviation of the M resistance reference values; when the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be measured is in the stable state;
the processing module is specifically configured to determine standard deviations of the M temperature values; determining the M resistance reference values according to respective natural logarithms of the M resistance values; determining a standard deviation of the M resistance reference values; when the standard deviation of the M temperature values is smaller than a first threshold value and the standard deviation of the M resistance reference values is smaller than a second threshold value, determining that the resistance to be detected is in the stable state;
the plurality of sets of stable data comprise first data and second data; the first data and the second data are any two different groups of stable data in the multiple groups of stable data; the processing module is specifically configured to determine a resistance temperature coefficient of the resistor to be measured according to a quotient of the first value and the second value; the first value is the difference between the logarithm of the first resistance value and the logarithm of the second resistance value; the first resistance value is an average value of M resistance values in the first data; the second resistance value is an average value of M resistance values in the second data; the second value is the difference between the first temperature value and the second temperature value; the first temperature value is an average value of M temperature values in the first data; the second temperature value is an average value of M temperature values in the second data;
the relationship among the first data, the second data and the resistance temperature coefficient of the resistor to be measured satisfies the following formula:
wherein, TCR represents the temperature coefficient of resistance of the resistance to be measured; r is T Representing the first resistance value; r is T0 Representing the second resistance value; t represents the first temperature value; t is a unit of 0 Representing the second temperature value;
the processing module is specifically configured to perform linear fitting on the multiple sets of stable data to obtain a TCR curve graph; the abscissa of the TCR graph is a temperature value; the ordinate of the TCR curve graph is the natural logarithm of the resistance value; and determining the resistance temperature coefficient of the resistor to be tested based on the slope of the TCR curve graph.
10. A readable storage medium, characterized in that the readable storage medium comprises: software instructions;
when the software instructions are run in a temperature coefficient acquisition device, the temperature coefficient acquisition device is caused to implement the method according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211383557.9A CN115825564A (en) | 2022-11-07 | 2022-11-07 | Method and device for acquiring resistance temperature coefficient and storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211383557.9A CN115825564A (en) | 2022-11-07 | 2022-11-07 | Method and device for acquiring resistance temperature coefficient and storage medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115825564A true CN115825564A (en) | 2023-03-21 |
Family
ID=85526812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211383557.9A Pending CN115825564A (en) | 2022-11-07 | 2022-11-07 | Method and device for acquiring resistance temperature coefficient and storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115825564A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116990672A (en) * | 2023-09-25 | 2023-11-03 | 江苏祥和电子科技有限公司 | Method and system for testing stability of resistance of welding spot of vehicle-gauge-level package |
| CN116994979A (en) * | 2023-09-26 | 2023-11-03 | 无锡卓海科技股份有限公司 | Square resistance measuring method, electronic device and storage medium |
-
2022
- 2022-11-07 CN CN202211383557.9A patent/CN115825564A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116990672A (en) * | 2023-09-25 | 2023-11-03 | 江苏祥和电子科技有限公司 | Method and system for testing stability of resistance of welding spot of vehicle-gauge-level package |
| CN116990672B (en) * | 2023-09-25 | 2023-12-08 | 江苏祥和电子科技有限公司 | Method and system for testing stability of resistance of welding spot of vehicle-gauge-level package |
| CN116994979A (en) * | 2023-09-26 | 2023-11-03 | 无锡卓海科技股份有限公司 | Square resistance measuring method, electronic device and storage medium |
| CN116994979B (en) * | 2023-09-26 | 2023-12-26 | 无锡卓海科技股份有限公司 | Square resistance measuring method, electronic device and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115825564A (en) | Method and device for acquiring resistance temperature coefficient and storage medium | |
| JP6406825B2 (en) | System and method for detecting battery capacity | |
| RU2640126C2 (en) | Methods and instruments of leakage current in resistance thermal detector monitoring | |
| US9243943B2 (en) | Air-flow sensor for adapter slots in a data processing system | |
| CN109752113B (en) | Sheet temperature sensor, position determining method and circuit design method in application of sheet temperature sensor | |
| CN110398304A (en) | A kind of temperature sensor batch testing system | |
| CN106092375B (en) | The method of calibration and tester of airborne equipment surface temperature sensor | |
| CN107704663A (en) | A kind of semiconductor device temperature pulsating stress acceleration model method for optimizing | |
| Anthony et al. | Non-invasive, transient determination of the core temperature of a heat-generating solid body | |
| EP4379335A1 (en) | Method and apparatus for measuring surface temperature of object | |
| GB2140923A (en) | Resistance thermometer testing | |
| CN111637983B (en) | Detection system and method of resistance type temperature sensor | |
| CN111965212B (en) | Thermophysical property calculation method, thermophysical property test system, electronic device, and storage medium | |
| CN108458812B (en) | Method and device for acquiring temperature of motor winding | |
| CN112504512A (en) | Temperature sensor precision self-detection and self-calibration method, electronic device and storage medium | |
| Li et al. | Research on the Adaptability of Thermistor Calibration Equations | |
| JP2022148537A (en) | Temperature sensor abnormality determination device, temperature sensor abnormality determination method, and temperature sensor abnormality determination program | |
| JP6568486B2 (en) | Temperature change prediction analysis apparatus and temperature change prediction analysis method | |
| Kulkarni et al. | Investigation of long-term drift of NTC temperature sensors with less than 1 mK uncertainty | |
| CN113218527B (en) | Thermistor-based temperature detection method, device, equipment, medium and system | |
| CN111666729B (en) | Insulator silicon rubber surface temperature calculation method based on thermodynamics and related device | |
| CN213874735U (en) | Precision self-detection and self-calibration device for temperature measurement sensor | |
| US20230105228A1 (en) | Estimation device, estimation method, and non-transitory computer-readable recording medium for thickness of deposit | |
| CN114167235B (en) | Insulation state evaluation method and device for high-voltage cable based on heat capacity change | |
| CN110568006B (en) | Heat storage density testing method and system for heat storage material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |