CN115821394B - SiC wafer detection system and detection method thereof - Google Patents
SiC wafer detection system and detection method thereof Download PDFInfo
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Abstract
The invention relates to a detection system and a detection method of a SiC wafer, wherein the detection system comprises a SiC ingot laser modifier, a modified layer visual detector, an ingot NG library, a crack ultrasonic processor, an ingot gumming instrument, a visual information processing computer, a glass plate pasting instrument, a glass plate position visual detector, a glue film compaction pressure controller, a glue film pasting quality visual detector, a wafer integrity visual detector, a wafer stripping instrument, a wafer and ingot NG library, an ingot gumming instrument, a wafer grinding instrument and an ingot grinding instrument. The invention can improve the crystal processing efficiency and reduce the material loss, thereby obviously reducing the production cost of substrates such as silicon, silicon carbide, gallium nitride or sapphire and the like and improving the yield of finished wafers; the on-line detection monitors the ingot stripping process, detects and sorts the key working procedures, sorts the stripped wafers and the ingots, can improve the success rate of wafer generation, save the production time and improve the production efficiency.
Description
Technical Field
The invention belongs to the field of SiC ingot processing, and relates to a detection system and a detection method of a SiC wafer.
Background
In many technical fields (e.g. MEMS, integrated circuits) wafers require thin wafers, typically 50-300 μm, to improve the heat dissipation of the chip, such as silicon, silicon carbide, gallium nitride, sapphire, and transparent materials. Such wafers are produced from an ingot by wire saw cutting according to the prior art, wherein relatively large material losses ("kerf-loss") occur. Because the starting materials used are often very expensive, it is highly desirable to manufacture such wafers with little material effort and thus more efficiently and cost effectively.
Accordingly, the following techniques have been proposed: a laser beam is irradiated to the single crystal SiC ingot by positioning a converging point of the laser beam having a wavelength that is transparent to the single crystal SiC within the single crystal SiC ingot, thereby forming a modified layer on a surface to be cut, and the SiC wafer is peeled from the single crystal SiC ingot along the surface to be cut on which the modified layer is formed.
In the whole process from SiC ingot to stripping of SiC wafer, a plurality of working procedures including spin coating adhesive, pressure curing, wafer stripping, photoresist removal and the like are involved, the most critical working procedure is SiC wafer stripping, and the SiC wafer stripping is related to a plurality of factors including whether surface adhesive is uniform, whether the middle of the SiC wafer contains bubbles or not, and any one of the factors can influence the stripping quality of the SiC wafer, and the conditions of degluing, incomplete stripping and the like often occur, so that the stripping quality and stripping aging of the wafer are influenced, the wafer stripping success rate is too low, and the production cost is too high.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a system and a method for inspecting a SiC wafer.
In order to achieve the above purpose, the following technical scheme is adopted:
a detection system of a SiC wafer comprises a SiC crystal ingot laser modifier, a modified layer visual detector, a crystal ingot NG library, a crack ultrasonic processor, a crystal ingot gumming instrument, a visual information processing computer, a glass plate pasting instrument, a glass plate position visual detector, a glue film compaction pressure controller, a glue film pasting quality visual detector, a wafer integrity visual detector, a wafer stripping instrument, a wafer and crystal ingot NG library, a crystal ingot gumming instrument, a wafer grinding instrument and a crystal ingot grinding instrument;
the method comprises the steps that the modified layer visual detector carries out information transmission through a modified layer visual detector signal transmission line and a visual information processing computer, an ingot NG library is installed beside the modified layer visual detector, an ingot with non-uniform or non-uniform modified layer crack expansion of a SiC ingot laser modified layer enters the ingot NG library, a crack ultrasonic processing instrument is installed between the modified layer visual detector and the ingot gluing instrument, an ingot with uniform and uniform modified layer crack expansion is placed into the crack ultrasonic processing instrument for auxiliary processing, a glass plate pasting instrument is installed between the ingot gluing instrument and a glue film compaction pressure controller, the glass plate position visual detector is installed on the glass plate pasting instrument, and carries out information transmission through the glass plate position visual detector signal transmission line and the visual information processing computer, the glue film compaction pressure controller carries out information transmission through the glue film compaction pressure signal transmission line and the visual information processing computer, a wafer integrity visual detector carries out information transmission through the glue film pasting quality visual detector signal transmission line and the visual information processing computer, a wafer integrity visual detector is installed on the wafer peeling instrument, and is used for carrying out information transmission between the wafer integrity detector and the wafer peeling instrument after the wafer peeling instrument is installed, and the wafer peeling quality visual detector is installed between the wafer peeling instrument and the wafer peeling instrument is sequentially, and the wafer peeling instrument is used for peeling off the wafer is installed, and the wafer is sequentially, and the wafer is peeled.
Preferably, the SiC ingot laser modifier realizes two-photon resonance absorption in a very narrow depth range inside a crystal by a nano-scale, picosecond or femtosecond laser and an optical system, so that a series of physicochemical processes of thermal cracking, chemical bond cracking and decomposition and laser induced ionization are carried out on a crystal material to form a modified layer perpendicular to the incidence direction of laser, and finally, the crystal is stripped into a wafer or the wafer is thinned.
Preferably, the adhesive film pressing pressure controller is provided with a pressure sensor, and the applied pressure value is monitored in real time.
Preferably, the wafer stripping instrument gives stripping force through an electric cylinder, and a pressure sensor is arranged on the electric cylinder to automatically control and monitor the applied stripping force in real time.
A method of inspecting a SiC wafer, comprising the steps of:
performing laser vertical modification on the ingot, performing plasma activation on the surface of the ingot subjected to the laser vertical modification, bonding the bottom of the ingot subjected to the plasma activation to an ingot tray, and conveying the ingot to a stripping station through a conveying belt;
the SiC ingot after laser modification detects crack growth of an ingot modified layer through a modified layer visual detector, the crack growth quality is checked, the modified layer visual detector transmits the appearance of the modified layer to a visual information processing computer, and the visual information processing computer analyzes images;
placing the modified SiC ingot into a crack ultrasonic processing instrument for auxiliary processing, increasing the crack expansion range of the modified layer, and reducing the bonding force of the modified layer;
coating an adhesive on the surface of the modified SiC ingot, arranging a glass plate on the adhesive, covering the glass plate above the adhesive, and applying pressure to the glass plate through a glue film compaction pressure controller to tightly adhere the glass plate and the surface of the ingot;
the adhesive film pasting quality visual detector scans and monitors the upper surface of the glass plate, the surface morphology is transmitted to the visual information processing computer, the visual information processing computer analyzes the image, and the adhesive condition of the adhesive between the upper surface of the ingot and the glass plate, including the middle bubble distribution condition, the bubble size and the number, is judged, so that whether the adhesive film pasting is qualified and effective is judged;
the SiC crystal ingot is stripped at a stripping station, when the stripping action is finished, a wafer integrity vision detector scans the upper surface of a glass plate, the surface morphology is transmitted to a vision information processing computer, an image is analyzed, whether a whole or partial SiC wafer is stuck or not is judged through the surface morphology of the glass, and then whether a trigger instruction enters the next working procedure or enters a wafer and crystal ingot NG library is triggered;
the peeled ingot and wafer are subjected to surface grinding by a wafer grinder and an ingot grinder, respectively.
Preferentially, the modified layer visual detector detects the crack propagation quality of the modified layer of the ingot, detects whether the crack on the surface of the SiC ingot is completely propagated, and enters the next process or returns to the previous process to perform laser scanning modification again.
Preferably, the crack ultrasonic processing instrument enables the crack of the preset stripping surface of the ingot to continue to extend through the vibration wave generated by ultrasonic waves, so that the crack of the modified layer is expanded to the whole stripping surface.
Preferably, the glass plate used is a tempered glass plate or a quartz glass plate or a nonmetallic material with good light transmittance, wherein whether the position of the glass plate is distributed centrally with the position of the modified ingot is checked by a glass plate position visual detector.
The beneficial effects of the invention are as follows:
compared with the multi-wire cutting technology commonly adopted in the industry, the technology for generating the SiC wafer by utilizing the vertical modification of the laser can improve the crystal processing efficiency and reduce the material loss, thereby obviously reducing the production cost of substrates such as silicon, silicon carbide, gallium nitride or sapphire and the like and improving the yield of finished wafers;
during detection, the ingot stripping process is monitored, key processes are detected and separated, and stripped wafers and ingots are separated, so that the success rate of wafer generation can be improved, the production time is saved, and the production efficiency is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
FIG. 1 is a flow chart of the system of the present invention.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order to make the present application solution better understood by those skilled in the art, the following description will be made in detail and with reference to the accompanying drawings in the embodiments of the present application, it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present application.
The detection system of the SiC wafer comprises a SiC ingot laser modifier 1, a modified layer visual detector 2, an ingot NG warehouse 3, a crack ultrasonic processor 4, an ingot gumming instrument 5, a visual information processing computer 6, a glass plate pasting instrument 16, a glass plate position visual detector 7, a glue film compaction pressure controller 8, a glue film pasting quality visual detector 9, a wafer integrity visual detector 10, a wafer stripper 11, a wafer and ingot NG warehouse 12, an ingot gumming instrument 13, a wafer grinding instrument 14 and an ingot grinding instrument 15;
the modified layer visual detector 2 carries out information transmission with the visual information processing computer 6 through a signal transmission line of the modified layer visual detector, the ingot NG warehouse 3 is arranged at one side of the modified layer visual detector 2, the SiC ingot laser modifier 1 is provided with an ingot with uneven crack growth or no crack growth, the ingot enters the ingot NG warehouse 3, the crack ultrasonic processor 4 is arranged between the modified layer visual detector 2 and the ingot gumming instrument 5, the ingot with uniform crack growth of the modified layer is put into the crack ultrasonic processor 4 for auxiliary processing, the glass plate position visual detector 7 carries out information transmission with the visual information processing computer 6 through a signal transmission line of the glass plate position visual detector, the adhesive film compaction pressure controller 8 carries out information transmission with the visual information processing computer 6 through an adhesive film compaction pressure signal transmission line, the film pasting quality visual detector 9 carries out information transmission through a film pasting quality visual detector signal transmission line and the visual information processing computer 6, the wafer integrity visual detector 10 carries out information transmission through a wafer integrity visual detector signal transmission line and the visual information processing computer 6, the wafer integrity visual detector 10 is arranged on the wafer stripping instrument 11 and is used for detecting the wafer integrity after the stripping of the wafer stripping instrument 11, the wafer and the ingot NG library 12 are arranged between the wafer stripping instrument 11 and the film pasting quality visual detector 9, the ingot photoresist remover 13 and the wafer grinder 14 are sequentially arranged in the subsequent two steps of the wafer stripping instrument 11, and the ingot grinder 15 is arranged between the wafer stripping instrument 11 and the SiC ingot laser modifier 1.
The SiC ingot laser modifier 1 realizes two-photon resonance absorption in a very narrow depth range inside a crystal through a nano or picosecond or femtosecond laser and an optical system, so that a crystal material is subjected to a series of physicochemical processes such as thermal cracking, chemical bond breaking and decomposition, laser induced ionization and the like to form a modified layer vertical to the incidence direction of laser, and finally, the crystal is peeled into a wafer or thinned, the adhesive film compaction pressure controller 8 is provided with a pressure sensor, the applied pressure value is monitored in real time, the wafer stripper 11 gives peeling force through an electric cylinder, and the pressure sensor is arranged on the electric cylinder to automatically control and monitor the applied peeling force in real time.
A method of inspecting a SiC wafer, comprising the steps of: the crystal ingot is subjected to laser modification at a laser modifier 1 of the SiC crystal ingot, a modified layer for stripping wafers is formed at a preset depth in the crystal ingot, the modified crystal ingot is subjected to quality detection of the modified layer on the surface of the crystal ingot through a visual detector 2 of the modified layer, the visual detector 2 of the modified layer transmits the detected appearance image of the modified layer to a visual information processing computer 6, the appearance image of the modified layer is processed, analyzed and judged to be the laser modified quality of the modified crystal ingot, if the crack expansion of the modified layer is uniform, a command is sent out, the crystal ingot enters a crack ultrasonic processor 4, if the crack expansion of the modified layer is nonuniform or has no crack expansion, the crystal ingot after the modification enters an NG library 3 of the crystal ingot, and the crystal ingot waits for manual processing.
The modified crystal ingot is processed in an auxiliary processing in a crack ultrasonic processing instrument 4 for reducing the bonding force of a modified layer of the modified crystal ingot, and facilitating the subsequent stripping of wafers, wherein the ultrasonic frequency is 10 KHz-50 KHz, and the ultrasonic time lasts for 10 min-20 min.
After ultrasonic treatment, the surface of the ingot after being re-modified by the ingot gumming machine 5 is coated with an adhesive, then a glass plate is covered in the glass plate adhering machine 16, and whether the position of the glass plate is distributed with the position of the ingot after being modified in the middle is checked by the glass plate position visual detector 7, so that the position of the glass plate is ensured to be uniformly stressed when being peeled off, and fragments are prevented.
The glass plate is pressurized through the adhesive film pressing pressure controller 8, so that the glass plate and the surface of the modified ingot are tightly adhered through the adhesive, the adhesive film pressing pressure controller 8 monitors the pressure application condition in real time, the pressure on the glass plate is ensured to be uniform and reach a preset pressure value, and the pressure value is set to be 500N-1200N.
Detecting the surface of the modified ingot after pressurization, and checking the uniformity of the adhesive on the surface of the modified ingot, the number of bubbles and the distribution condition; if the adhesive is not uniform or too many bubbles, the wafer and ingot NG library 12 ends the process; if the adhesive is uniform and has no bubbles, the adhesive is considered to be bonded and enters the wafer stripper 11.
After the wafer stripping instrument 11 strips the modified ingot, the wafer and the glass plate are bonded together, at the moment, the surface of the glass plate is detected by the wafer integrity visual detector 10 to check whether the wafer and the integrity of the wafer exist or not, if the wafer does not exist or the wafer is incomplete, the wafer and the glass plate, and the stripped wafer and the ingot NG library 12 are finished; if the wafer is detected to be complete, the wafer and the glass plate enter the ingot glue remover 13, the stripped ingot 24 enters the stripped ingot grinding machine 15, the stripped ingot stripping surface is ground, and the next modified stripping process is carried out.
The photoresist removing process is carried out in the ingot photoresist remover 13, the wafer and the glass plate are rapidly degummed and separated through liquid soaking at a certain temperature and ultrasonic vibration, the photoresist is removed, the separated glass plate enters a recovery box for standby, and the wafer enters a wafer grinding machine 14 for grinding the stripping surface.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. The SiC wafer detection system is characterized by comprising a SiC ingot laser modifier (1), a modified layer visual detector (2), an ingot NG library (3), a crack ultrasonic processor (4), an ingot gumming machine (5), a visual information processing computer (6), a glass plate pasting instrument (16), a glass plate position visual detector (7), a glue film compaction pressure controller (8), a glue film pasting quality visual detector (9), a wafer integrity visual detector (10), a wafer stripper (11), a wafer and ingot NG library (12), an ingot gumming machine (13), a wafer grinding instrument (14) and an ingot grinding instrument (15);
the modified layer visual detector (2) performs information transmission through a signal transmission line of the modified layer visual detector and a visual information processing computer (6), the crystal ingot NG library (3) is arranged on one side of the modified layer visual detector (2), crystal ingots with non-uniform or non-crack propagation of the modified layer of the SiC crystal ingot laser modifier (1) enter the crystal ingot NG library (3), the crack ultrasonic processor (4) is arranged between the modified layer visual detector (2) and the crystal ingot gumming machine (5), the crystal ingots with uniform and uniform crack propagation of the modified layer are placed into the crack ultrasonic processor (4) for auxiliary processing, the glass plate pasting machine (16) is arranged between the crystal ingot gumming machine (5) and a glue film compaction pressure controller (8), the glass plate position visual detector (7) is arranged on the glass plate pasting machine (16) and performs information transmission through a signal transmission line of the glass plate position visual detector and the visual information processing computer (6), the glue film compaction pressure controller (8) performs information transmission through a glue film compaction pressure signal transmission line and a visual information processing computer (6), the crystal plate pasting machine (9) performs information transmission through a signal transmission line of the glass plate pasting machine (6) and the complete information transmission line of the glass plate pasting machine (6), the wafer stripping instrument (11) is provided with a wafer integrity vision detector (10) for detecting the wafer integrity of the stripped wafer stripping instrument (11), a wafer and an ingot NG library (12) are arranged between the wafer stripping instrument (11) and the adhesive film pasting quality vision detector (9), the ingot photoresist remover (13) and the wafer grinding instrument (14) are sequentially arranged in the subsequent two steps of the wafer stripping instrument (11), and the ingot grinding instrument (15) is arranged between the wafer stripping instrument (11) and the SiC ingot laser modifying instrument (1).
2. The system according to claim 1, wherein the SiC ingot laser modifier (1) realizes two-photon resonance absorption in a very narrow depth range inside the crystal by a nano-or picosecond or femtosecond laser and an optical system, so that a series of physicochemical processes of thermal cracking, chemical bond cracking and decomposition and laser induced ionization are performed on the crystal material to form a modified layer perpendicular to the incidence direction of laser, and finally, crystal peeling into a wafer or wafer thinning is realized.
3. The SiC wafer inspection system according to claim 1, wherein the film pressing pressure controller (8) is provided with a pressure sensor for monitoring the applied pressure value in real time.
4. A system for inspecting SiC wafers according to claim 1, characterized in that the wafer stripper (11) gives the stripping force through an electric cylinder on which a pressure sensor is provided, the magnitude of the stripping force applied being automatically controlled and monitored in real time.
5. A method for inspecting a SiC wafer, comprising the steps of:
performing laser vertical modification on the ingot, performing plasma activation on the surface of the ingot subjected to the laser vertical modification, bonding the bottom of the ingot subjected to the plasma activation to an ingot tray, and conveying the ingot to a stripping station through a conveying belt;
the SiC crystal ingot after laser modification detects crack growth of the crystal ingot modified layer through a modified layer visual detector (2), the crack growth quality is checked, the modified layer visual detector (2) transmits the appearance of the modified layer to a visual information processing computer (6), and the visual information processing computer (6) analyzes the image;
placing the modified SiC ingot into a crack ultrasonic processing instrument (4) for auxiliary processing, increasing the crack extension range of the modified layer and reducing the bonding force of the modified layer;
coating an adhesive on the surface of the modified SiC ingot, arranging a glass plate on the adhesive, covering the glass plate above the adhesive, and applying pressure to the glass plate through a glue film compaction pressure controller (8) to enable the glass plate to be tightly adhered to the surface of the ingot;
the adhesive film pasting quality visual detector (9) scans and monitors the upper surface of the glass plate, the surface morphology is transmitted to the visual information processing computer, the visual information processing computer analyzes the image, and the pasting condition of the pasting agent between the upper surface of the ingot and the glass plate is judged, wherein the pasting condition comprises the middle bubble distribution condition, the bubble size and the number, and whether the adhesive film pasting is qualified or not is judged;
the SiC crystal ingot is stripped at a stripping station, when the stripping action is finished, a wafer integrity visual detector (10) scans the upper surface of a glass plate, the surface morphology is transmitted to a visual information processing computer (6), an image is analyzed, whether a whole or partial SiC wafer is stuck or not is judged through the surface morphology of the glass, and then whether a command enters the next working procedure or enters a wafer and crystal ingot NG library (12) is triggered;
the peeled ingot and wafer are subjected to surface grinding by a wafer grinder (14) and an ingot grinder (15), respectively.
6. The method according to claim 5, wherein the modified layer visual detector (2) detects the crack propagation quality of the modified layer of the ingot, detects whether the crack on the surface of the SiC ingot is completely propagated, and enters the next process or returns to the previous process to perform laser scanning modification again.
7. A method for inspecting a SiC wafer according to claim 5, wherein the crack ultrasonic processor (4) continues to extend the crack of the predetermined peeling surface of the ingot by the ultrasonic-generated shock wave, so that the crack of the modified layer is extended to the entire peeling surface.
8. The method according to claim 5, wherein the glass plate is a tempered glass plate or a quartz glass plate or a nonmetallic material with good light transmittance, and wherein the visual detector (7) for the glass plate positions is used to check whether the positions of the glass plate are distributed centrally with the positions of the ingot after modification.
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| WO2013161860A1 (en) * | 2012-04-24 | 2013-10-31 | 国立大学法人岡山大学 | Semiconductor non-destructive inspection device and semiconductor non-destructive inspection method |
| JP6384822B2 (en) * | 2013-11-07 | 2018-09-05 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | Image sensor and manufacturing method thereof |
| JP6797481B2 (en) * | 2017-03-01 | 2020-12-09 | 株式会社ディスコ | Semiconductor ingot inspection method, inspection equipment and laser processing equipment |
| JP7370879B2 (en) * | 2020-01-22 | 2023-10-30 | 株式会社ディスコ | Wafer generation method and wafer generation device |
| CN111889895A (en) * | 2020-07-02 | 2020-11-06 | 松山湖材料实验室 | Jet-assisted multi-pulse-width laser ingot stripping method |
| CN115055846A (en) * | 2022-07-22 | 2022-09-16 | 广东工业大学 | Laser-stripped crystal ingot real-time monitoring system and method |
| CN115172229B (en) * | 2022-09-07 | 2022-11-18 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Full-automatic device for stripping wafer from crystal after laser modification |
| CN115592257B (en) * | 2022-12-13 | 2023-04-18 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Mechanical stripping device for stripping wafer from laser modified crystal |
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