CN115819078A - PTC thermistor ceramic material resisting reducing atmosphere and preparation method thereof - Google Patents

PTC thermistor ceramic material resisting reducing atmosphere and preparation method thereof Download PDF

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CN115819078A
CN115819078A CN202211631514.8A CN202211631514A CN115819078A CN 115819078 A CN115819078 A CN 115819078A CN 202211631514 A CN202211631514 A CN 202211631514A CN 115819078 A CN115819078 A CN 115819078A
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general formula
reducing atmosphere
ceramic material
ptc thermistor
sintering
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朱兴文
张楠
贾小晶
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Jiangsu Jun Porcelain Technology Co ltd
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Abstract

The invention discloses a PTC thermistor ceramic material with reducing atmosphere resistance, which consists of basic PTC ceramic powder based on lead barium titanate and a compound additive material of an oxygen group element tellurium, wherein the additive material comprises the following components in percentage by weight: teO 2 、TeO 3 And other Te-containing compounds. The PTC thermistor ceramic material provided by the invention has the room temperature resistivity of 20-200K omega cm, the Curie temperature Tc of 140-260 ℃, the nonlinear coefficient of 5-49% controllable and adjustable, and the long-term working pressure resistance in reducing atmosphere is reduced by less than 10%. The PTC heating element prepared by the invention can better resist reducing atmosphere, and the performances of the PTC heating element such as voltage resistance, impact current, heating power, surface temperature and the like can be reduced by reducing gasThe influence of the atmosphere is small and the reliability of the use of the PTC heating element is greatly increased.

Description

PTC thermistor ceramic material resisting reducing atmosphere and preparation method thereof
Technical Field
The invention relates to the technical field of electronic materials, in particular to a PTC thermistor ceramic material and a preparation method thereof.
Background
PTC ceramics generally refer to thermistor materials or components having a Positive Temperature Coefficient of Resistance (Positive Temperature Coefficient Resistance). The PTC ceramic has the advantages of temperature sensitivity, energy conservation, no open fire, safety and the like, and is widely applied to the fields of automobiles, household appliances, communication, automatic control and the like. The heater made of PTC as constant temperature heating element has high reliability and safety, and the heating value can be automatically adjusted along with the change of environmental temperature. In the fields of current limiting, temperature sensing and the like, due to the characteristic that the unique resistance of the PTC jumps along with the temperature change, the devices have the characteristics of small volume, simple structure, high reliability and the like.
In the industrial PTC heating element, silica gel is generally bonded with an electrode plate to make the element conductive, the silica gel component contains organic volatile substances, and when the silica gel is cured at 180-285 ℃ and works for a long time when being electrified, the organic silica gel can volatilize dimethyl cyclosiloxane (DMC) at the temperature range to make the PTC ceramic piece work in a weak reducing atmosphere, so that the electrical property of the PTC is deteriorated, and the room temperature resistivity of the PTC heating element can be reduced to different degrees. During the use, the performances of the PTC heating element, such as voltage resistance, impact current, heating power, and surface temperature, change with the influence of the reducing atmosphere, thereby greatly affecting the use reliability of the PTC element.
Disclosure of Invention
In order to solve the above-mentioned disadvantages of the prior art, the present invention aims to provide a PTC thermistor material with resistance to a reducing atmosphere, wherein a Te compound is added to the raw materials to improve the resistance of PTC heating ceramic to the reducing atmosphere.
In order to achieve the technical purpose, the technical scheme of the invention is as follows: a PTC thermistor ceramic material with resistance to reducing atmosphere, which consists of basic ceramic powder based on lead barium titanate and additive materials, wherein the additive materials comprise: teO 2 、TeO 3 And other Te-containing compounds.
The general formula of the basic ceramic powder based on lead barium titanate is as follows:
(Ba 1-x-y Pb x Ca y RE z )(Ti 1-w ME w )O 3 +aTiO 2 + a sintering aid (1);
in the general formula (1), RE is any one element or any several elements of Y, sb, bi, la, ce, er, sm and Nd;
in the general formula (1), ME is any one element or any several elements of Nb, ta and V;
in the general formula (1), x is 0. Ltoreq. X.ltoreq.0.6 mol;
in the general formula (1), y is 0-0.12 mol;
in the general formula (1), z and w are 0.0005. Ltoreq. Z + w. Ltoreq.0.0055 mol;
in the general formula (1), a is 0.002-0.03 mol;
in the general formula (1), the sintering aid comprises Li 2 CO 3 、SiO 2 、MnO 2 、Al 2 O 3 Any one or more of the compounds.
Preferably, teO is added to the base ceramic formulation of the formula (1) 2 、TeO 3 And other Te containing compounds, wherein the amount of the Te compound added is 0.0001 to 0.004mol based on 1mol of the Ti element-containing oxide.
Preferably, the total content of the sintering aid is 0.005 to 0.05mol based on 1mol of the oxide containing the Ti element.
Further, the invention also provides a preparation method of the PTC thermistor ceramic material with the resistance to reducing atmosphere, which comprises the following steps:
1) Preparing ingredients;
according to the general formula (1) of the basic ceramic powder:
(Ba 1-x-y Pb x Ca y RE z )(Ti 1-w ME w )O 3 +aTiO 2 + a sintering aid (1),
weighing the powder after calculating the weight according to the molar ratio in the molecular formula, and then mixing the powder;
in the general formula (1), RE is any one element or any several elements of Y, sb, bi, la, ce, er, sm and Nd;
in the general formula (1), ME is any one element or any several elements of Nb, ta and V;
in the general formula (1), x is 0. Ltoreq. X.ltoreq.0.6 mol;
in the general formula (1), y is 0-0.12 mol;
in the general formula (1), z and w are 0.0005. Ltoreq. Z + w. Ltoreq.0.0055 mol;
in the general formula (1), a is 0.002-0.03 mol;
in the general formula (1), the sintering aid comprises Li 2 CO 3 、SiO 2 、MnO 2 、Al 2 O 3 Any one or more compounds;
2) Granulating;
ball-milling, drying, synthesizing and ball-milling the mixed powder by taking zirconia balls and deionized water as media, then adding polyvinyl alcohol for granulation, and pressing into blanks;
3) Sintering of
And (3) sintering the biscuit obtained by compacting in the step 2) at a high temperature, then spraying an electrode, sintering at a low temperature, and curing to obtain the PTC thermistor ceramic material with the reducing atmosphere resistance.
Preferably, the synthesis in step 2) is carried out at 1050 ℃ +/-50 ℃ for 3 hours.
Preferably, the polyvinyl alcohol added into the granules in the step 2) accounts for 3.0 to 12.0 weight percent of the total weight of the mixed powder, and the concentration of the polyvinyl alcohol is 5 to 12 weight percent. More preferably, the polyvinyl alcohol added to the granulation accounts for 8.0wt% of the total weight of the mixed powder, and the polyvinyl alcohol concentration is 10wt%.
Preferably, the green compact in the step 2) is pressed into a biscuit with the thickness of 28X 17.3X 2.9mm under the pressure of 10-15 MPa.
Preferably, the high-temperature sintering in the step 3) is sintering at 1210-1350 ℃, and then preserving heat for 30min. More preferably, the high-temperature sintering is sintering at 1230 to 1330 ℃.
Preferably, the spray electrode in step 3) is a printed Ag-Zn, or Al, or aluminum-sprayed electrode.
Preferably, the low-temperature sintering of the Ag-Zn electrode in the step 3) is to perform low-temperature sintering at 450-680 ℃, keep the temperature for 8min and solidify the electrode. More preferably, the low-temperature sintering in step 3) is performed at 480 to 520 ℃.
The invention weighs the materials according to the material formula, uses zirconia balls and deionized water as media, ball-mills the powder and the ingredients for a preset time, dries, and synthesizes at a proper temperature to obtain mixed powder. Preferably, 3.0 to 12.0 weight percent of polyvinyl alcohol with the concentration of 5 to 12 weight percent of the weight of the mixed powder is added into the mixed powder for granulation, and then the mixture is pressed into a biscuit with the thickness of 28 multiplied by 17.3 multiplied by 2.9mm under the pressure of 10 to 15 MPa. Placing the pressed biscuit in an air atmosphere at 1210-1350 ℃ to fully sinter the biscuit, so as to obtain the PTC thermistor material with the anti-reducing atmosphere; for performance test, the surface of the ceramic is ground, an electrode is printed and coated on the surface of the ceramic, the ceramic with the electrode is placed in an air atmosphere at 450-680 ℃ for heat treatment, and the temperature is kept for 8min.
Compared with the prior art, the PTC thermistor ceramic material has the advantages that:
1. the method of the invention changes the formula of the material, namely in (Ba, pb) TiO 3 The prepared PTCR ceramic sheet is subjected to 200H reduction atmosphere test by doping Te compound into the PTC ceramic material, the resistance change rate before and after reduction is reduced from-60% to-20%, and the withstand voltage change rate is reduced from 36% to below 10% (Tc 204).
2. The method disclosed by the invention is simple to operate, easy to control, low in cost and easy to implement industrially, and has great significance for the research on the improvement of the reduction resistance of the PTCR heating ceramic.
The invention is characterized in that: the compound of Te, a key additive, is selected to have unique chemical and physical properties. First, te is an amphoteric element having both metallic and non-metallic properties; secondly, compared with other amphoteric elements, the compound has higher melting point and boiling point, so that the compound is not volatilized completely in the ceramic sintering process, and meanwhile, the compound can be relatively uniformly distributed in the ceramic (mainly existing in a grain boundary) due to the moderate vapor pressure; most importantly, the valence of Te is easily changed, and the Te can interact with a reducing atmosphere diffused along grain boundaries when the ceramic works so as to reduce the influence of the reducing atmosphere.
According to the invention, te compound is added into the raw materials to improve the anti-reducing atmosphere capability of the PTC heating ceramic, the PTC heating element prepared by the method can better resist the reducing atmosphere, the performances of voltage resistance, impact current, heating power, surface temperature and the like of the PTC heating element are less influenced by the reducing atmosphere, and the use reliability of the PTC heating element is greatly improved.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Example 1
a. Batch preparation (Tc 204): according to the mass ratio of the raw material powder, the following raw material powder formula is adopted: (Ba) 0.757 Pb 0.213 Ca 0.03 )(Ti 1.0085 Nb 0.0015 )O 3 +3.5mol% sintering aid + v mol% TeO 2 Wherein the amount of the base ceramic powder based on lead barium titanate is (Ba) 0.757 Pb 0.213 Ca 0.03 )(Ti 1.0085 Nb 0.0015 )O 3 +3.5mol% sintering aid, the amount of added material being v mol% TeO 2 Wherein v is 0.00, 0.005, 0.02, 0.04, 0.06, 0.08, 0.1, 0.15 (mol%). The weights were calculated in terms of molar ratios in the formula and weighed as shown in Table 1 below.
TABLE 1 ingredient Table of example 1 (unit: g)
Numbering BaCO 3 Pb 3 O 4 CaCO 3 TiO 2 Nb 2 O 5 Sintering aid TeO 2
204-0 149.39 47.54 3.00 0.40 80.68 2.42 0.0000
204-5 149.39 47.54 3.00 0.40 80.68 2.42 0.0080
204-20 149.39 47.54 3.00 0.40 80.68 2.42 0.0319
204-40 149.39 47.54 3.00 0.40 80.68 2.42 0.0638
204-60 149.39 47.54 3.00 0.40 80.68 2.42 0.0958
204-80 149.39 47.54 3.00 0.40 80.68 2.42 0.1277
204-100 149.39 47.54 3.00 0.40 80.68 2.42 0.1596
204-150 149.39 47.54 3.00 0.40 80.68 2.42 0.2394
b. Weighing raw material ingredients according to the formula proportion in the table 1, taking zirconia balls and deionized water as media, carrying out ball milling on mixed powder for 24 hours, then drying ball grinding materials, synthesizing for 3 hours at 1050 ℃, then carrying out ball milling, adding 8.0wt% of polyvinyl alcohol (PVA) with the concentration of 10wt% of the total weight of the mixed powder, carrying out granulation, and tabletting under the pressure of 10MPa to prepare a square biscuit with the size of 28 x 17.3 x 2.9 mm;
c. sintering the pressed round biscuit at 1210-1330 ℃ in air atmosphere, and carrying out heat preservation sintering for 30min to fully sinter the square biscuit and realize solid-phase reaction; then spraying an Ag electrode on the surface of the ceramic wafer, sintering the electrode at 480-520 ℃ at low temperature, preserving heat for 8min, and solidifying the electrode to finally obtain the PTC heating ceramic wafer for the new energy automobile with the reduction-resistant atmosphere;
d. carrying out room temperature resistance test on the obtained PTC ceramic wafer;
e. will be doped with TeO 2 Applying direct current voltage at a boosting rate of 100V/min until the sample breaks down, and recording the voltage resistance of the PTC ceramic sample;
f. the PTC ceramic sample was heated at a temperature rise rate of 2 ℃/min, and the resistance-temperature characteristics were measured, the results of which are shown in Table 2;
g. the PTC ceramic samples were divided into 2 groups for comparison with each other, and the number of each sample was 5. Each was placed in 2 1L closed containers, and 50 ml of glacial acetic acid was placed in one of the containers. And respectively vacuumizing the two containers to 0.4atm, keeping the pressure for 30min, and then closing the vacuum pump, wherein the two containers are still kept in a sealed state for 200H. And then testing the resistance R25 and the withstand voltage of the PTC ceramic chip one by one, comparing the resistance and the withstand voltage under the atmosphere with glacial acetic acid (reducing atmosphere) and the atmosphere without glacial acetic acid (non-reducing atmosphere), and calculating the change rate of the PTC ceramic chip. The test results are shown in table 3.
TABLE 2 comparison of measured data of electrical properties of PTCR ceramic (Tc 204) samples with different Te contents
Figure BDA0004005970870000071
Figure BDA0004005970870000081
TABLE 3. The room temperature resistance and the voltage withstanding strength change rate values of the samples with different Te contents after electrification
Figure BDA0004005970870000082
And (4) conclusion: as shown in Table 3, teO was not added 2 The room temperature resistance change rate after reduction is about-60%, the withstand voltage change rate is-36.7%, and the change rate is along with TeO 2 The content is increased, the change rate of the room temperature resistance and the withstand voltage strength of the sample are reduced, the room temperature resistance change rate is about 20% when the Te content is 0.04-0.06 mol%, and the withstand voltage strength change rate is below 10%. The above experimental results show that TeO 2 The addition of (2) has a remarkable effect on improving the reduction resistance of the PTC heating ceramic with the Curie temperature of about 204 ℃.
Example 2
a. Ingredient preparation (Tc 252): according to the mass ratio of the raw material powder, the following raw material powder formula is adopted: (Ba) 0.627 Pb 0.343 Ca 0.03 )(Ti 1.0085 Nb 0.0015 )O 3 +3.5mol% sintering aid + v mol% TeO 2 Wherein the amount of the base ceramic powder based on lead barium titanate is (Ba) 0.627 Pb 0.343 Ca 0.03 )(Ti 1.0085 Nb 0.0015 )O 3 +3.5mol% sintering aid, the amount of added material being v mol% TeO 2 Wherein v is 0.00, 0.005, 0.02, 0.04, 0.06, 0.08, 0.1, 0.15mol%. Weights were calculated as molar ratios in the formula and weighed as in table 4 below:
TABLE 4 ingredient Table of example 2 (unit: g)
Figure BDA0004005970870000091
b, weighing raw material ingredients according to the formula proportion in the table, taking zirconia balls and deionized water as media, carrying out ball milling on the mixture for 24 hours, then drying ball grinding materials, synthesizing for 3 hours at 1050 ℃, then carrying out ball milling, adding 8.0wt% of polyvinyl alcohol (PVA) with the concentration of 10wt% of the total weight of powder, carrying out granulation, and tabletting under the pressure of 10MPa to prepare a square biscuit with the size of 28 x 17.3 x 2.9 mm;
c, sintering the pressed round biscuit at 1230-1330 ℃ in air atmosphere, and performing heat preservation sintering for 30min to fully sinter the square biscuit and realize solid-phase reaction; and then spraying an Ag electrode on the surface of the ceramic wafer, sintering the electrode at 480-520 ℃ at low temperature, preserving heat for 8min, and solidifying the electrode to finally obtain the reducing atmosphere resistant PTC heating ceramic wafer for the household appliances.
And d, carrying out room temperature resistance test on the obtained PTC ceramic chip.
e. Will be doped with TeO 2 The PTC ceramic sample of (1) was subjected to an alternating voltage at a step-up rate of 50V/min until the sample broke down, and the withstand voltage was recorded.
f. The PTC ceramic samples were heated at a temperature rise rate of 2 ℃/min, and the resistance-temperature characteristics were measured, and the results are shown in Table 5.
g. The PTC ceramic samples were divided into 2 groups for comparison with each other, and the number of each sample was 5. Each of the containers was placed in 2 1L closed containers, and 50 ml of glacial acetic acid was placed in one of the containers. And respectively vacuumizing the two containers to 0.4atm, keeping the pressure for 30min, and then closing the vacuum pump, wherein the two containers are still kept in a sealed state for 200H. Then, the resistance R25 and the withstand voltage (alternating current) of the PTC ceramic pieces are tested one by one, the resistance and the withstand voltage under the atmosphere with glacial acetic acid (reducing atmosphere) and the atmosphere without glacial acetic acid (non-reducing atmosphere) are compared, and the change rate of the PTC ceramic pieces is calculated. The test results are shown in table 6.
TABLE 5 comparison of measured data for electrical properties of PTCR ceramic (Tc 252) samples of varying Te content
Performance of Resistivity at room temperature R room Curie temperature Tc Non-linear coefficient alpha 15 Withstand voltage strength
Unit of (Ω·cm) (℃) (%/℃) Vac/mm
252-0 1.75×10 3 252.5 16.66 320
252-5 2.31×10 3 251.3 14.53 330
252-20 3.55×10 3 251.8 15.61 330
252-40 6.68×10 3 250.7 13.01 340
252-60 10.4×10 3 251.0 11.12 390
252-80 24.6×10 3 249.8 10.85 390
252-100 40.3×10 3 247.3 7.99 400
252-150 76.6×10 3 247.7 8.36 400
TABLE 6. The room temperature resistance and the voltage withstanding strength change rate values of the samples with different Te contents after electrification
Figure BDA0004005970870000101
And (4) conclusion: as shown in Table 6, teO was not added 2 The room temperature resistance change rate after reduction is about-42%, the withstand voltage change rate is-38%, and the withstand voltage change rate is along with TeO 2 The content is increased, the change rate of the room-temperature resistance and the withstand voltage strength of the sample are reduced, the room-temperature resistance change rate is below 20% when the Te content is more than 0.06mol%, and the withstand voltage strength change rate is below 20%. The above experimental results show that TeO 2 The addition of (A) has a remarkable effect of improving the reduction resistance of the household appliance PTC heating ceramic with the Curie temperature of 252 ℃.
The PTC thermistor ceramic material can reach the room temperature resistivity of 20-200K omega cm in the reducing atmosphere, the Curie temperature Tc of 140-260 ℃, the nonlinear coefficient of the PTC thermistor ceramic material is controllable and adjustable within the range of 5-49%, and the long-term working withstand voltage in the reducing atmosphere is reduced by less than 10%. The PTC heating element prepared by the invention can better resist the reducing atmosphere, the performances of voltage resistance, impact current, heating power, surface temperature and the like of the PTC heating element are less influenced by the reducing atmosphere, and the use reliability of the PTC heating element is greatly improved.
It is to be understood that the terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only, and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, and "a" and "an" typically include at least two, but do not exclude the presence of at least one.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a good or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such good or system. Without further limitation, an element defined by the phrases "comprising one of \8230;" does not exclude the presence of additional like elements in an article or system comprising the element.
Finally, it should be noted that the embodiments of the present application present numerous technical details for the reader to better understand the present application, as will be appreciated by one of ordinary skill in the art. However, the technical solutions claimed in the claims of the present application can be basically implemented without these technical details and various changes and modifications based on the above-described embodiments. Accordingly, in actual practice, various changes in form and detail may be made to the above-described embodiments without departing from the spirit and scope of the present application.

Claims (10)

1. A reducing atmosphere resistant PTC thermistor ceramic material, which is characterized by consisting of a lead barium titanate-based base ceramic powder and an additive material, wherein the additive material comprises: teO 2 、TeO 3 And other Te-containing compounds.
2. A reducing atmosphere resistant PTC thermistor ceramic material according to claim 1, characterized in that the basic ceramic powder based on lead barium titanate has the general formula:
(Ba 1-x-y Pb x Ca y RE z )(Ti 1-w ME w )O 3 +aTiO 2 + a sintering aid (1);
in the general formula (1), RE is any one element or any several elements of Y, sb, bi, la, ce, er, sm and Nd;
in the general formula (1), ME is any one element or any several elements of Nb, ta and V;
in the general formula (1), x is 0. Ltoreq. X.ltoreq.0.6 mol;
in the general formula (1), y is 0-0.12 mol;
in the general formula (1), z and w are 0.0005. Ltoreq. Z + w. Ltoreq.0.0055 mol;
in the general formula (1), a is 0.002-0.03 mol;
in the general formula (1), the sintering aid comprises Li 2 CO 3 、SiO 2 、MnO 2 、Al 2 O 3 Any one or more of the compounds.
3. A PTC thermistor ceramic material resistant to reducing atmosphere according to claim 2, characterized in that TeO is added on the basis of the basic ceramic formulation of formula (1) 2 、TeO 3 And other Te containing compounds, wherein the amount of the Te compound added is 0.0001 to 0.004mol based on 1mol of the Ti element-containing oxide.
4. A reducing atmosphere resistant PTC thermistor ceramic material according to claim 2, wherein the total content of the sintering aid is 0.005 to 0.05mol based on 1mol of the oxide containing Ti element.
5. A preparation method of a PTC thermistor ceramic material with resistance to reducing atmosphere is characterized by comprising the following steps:
1) Preparing ingredients;
according to the general formula (1) of the basic ceramic powder:
(Ba 1-x-y Pb x Ca y RE z )(Ti 1-w ME w )O 3 +aTiO 2 + a sintering aid (1),
weighing the powder after calculating the weight according to the molar ratio in the molecular formula, and then mixing the powder;
in the general formula (1), RE is any one element or any several elements of Y, sb, bi, la, ce, er, sm and Nd;
in the general formula (1), ME is any one element or any several elements of Nb, ta and V;
in the general formula (1), x is 0. Ltoreq. X.ltoreq.0.6 mol;
in the general formula (1), y is 0-0.12 mol;
in the general formula (1), z and w are 0.0005. Ltoreq. Z + w. Ltoreq.0.0055 mol;
in the general formula (1), a is 0.002-0.03 mol;
in the general formula (1), the sintering aid comprises Li 2 CO 3 、SiO 2 、MnO 2 、Al 2 O 3 Any one or more compounds;
2) Granulating;
ball-milling, drying, synthesizing and ball-milling the mixed powder by taking zirconia balls and deionized water as media, then adding polyvinyl alcohol for granulation, and pressing into blanks;
3) Sintering
And (3) sintering the biscuit obtained by compacting in the step 2) at a high temperature, then spraying an electrode, sintering at a low temperature, and curing to obtain the PTC thermistor ceramic material with the reducing atmosphere resistance.
6. The method for preparing a reducing atmosphere resistant PTC thermistor ceramic material according to claim 5, wherein the synthesis in step 2) is performed at 1050 ℃ ± 50 ℃ for 3 hours.
7. The method for preparing a PTC thermistor ceramic material with resistance to a reducing atmosphere of claim 5, wherein the polyvinyl alcohol added into the granules in step 2) accounts for 3.0 to 12.0wt% of the total weight of the mixed powder, and the polyvinyl alcohol concentration is 5 to 12wt%.
8. The method for preparing a PTC thermistor ceramic material resistant to a reducing atmosphere according to claim 5, wherein the high-temperature sintering of step 3) is sintering at 1210-1350 ℃ and then keeping the temperature for 30min.
9. The method of preparing a reducing atmosphere resistant PTC thermistor ceramic material according to claim 5, wherein the spray electrode of step 3) is a printed Ag-Zn, or Al, or aluminum spray electrode.
10. The method for preparing a PTC thermistor ceramic material with resistance to a reducing atmosphere according to claim 5, wherein the low-temperature sintering of the Ag-Zn electrode in step 3) is carried out at 450-680 ℃, the temperature is kept for 8min, and the electrode is solidified.
CN202211631514.8A 2022-12-19 2022-12-19 PTC thermistor ceramic material resisting reducing atmosphere and preparation method thereof Pending CN115819078A (en)

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Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2006298680A (en) * 2005-04-18 2006-11-02 Taiyo Yuden Co Ltd Dielectric ceramic and laminated ceramic capacitor
US20130250478A1 (en) * 2012-03-20 2013-09-26 Samsung Electro-Mechanics Co., Ltd. Dielectric composition and multilayer ceramic electronic component including the same
CN108975907A (en) * 2018-09-05 2018-12-11 天津大学 The method for improving barium titanate dielectric material resistance to reduction is adulterated by transition-metal ions
CN112694325A (en) * 2020-12-22 2021-04-23 江苏钧瓷科技有限公司 PTC thermistor ceramic material and preparation method and application thereof
CN114031394A (en) * 2021-10-22 2022-02-11 江苏钧瓷科技有限公司 Method for improving reduction resistance of PTCR (thermal sensitive ceramic)

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006298680A (en) * 2005-04-18 2006-11-02 Taiyo Yuden Co Ltd Dielectric ceramic and laminated ceramic capacitor
US20130250478A1 (en) * 2012-03-20 2013-09-26 Samsung Electro-Mechanics Co., Ltd. Dielectric composition and multilayer ceramic electronic component including the same
CN108975907A (en) * 2018-09-05 2018-12-11 天津大学 The method for improving barium titanate dielectric material resistance to reduction is adulterated by transition-metal ions
CN112694325A (en) * 2020-12-22 2021-04-23 江苏钧瓷科技有限公司 PTC thermistor ceramic material and preparation method and application thereof
CN114031394A (en) * 2021-10-22 2022-02-11 江苏钧瓷科技有限公司 Method for improving reduction resistance of PTCR (thermal sensitive ceramic)

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