CN115791862B - Wafer surface measurement equipment, detection method and application - Google Patents
Wafer surface measurement equipment, detection method and application Download PDFInfo
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Abstract
The invention belongs to the technical field of XPS equipment, and discloses wafer surface measurement equipment, a detection method and application thereof, wherein the method comprises the following steps: an X-ray source; a ring energy analyzer module data processing module; a real-time monitoring module; a rapid sample injection module; a transmission module; a vacuum module; a heating module; a sample stage module. According to the invention, through improving the collection solid angle of photoelectrons, the number of photoelectrons passing through the annular energy analyzer is greatly increased, the collection efficiency of the device on photoelectric signals can be greatly improved, and the time consumption caused by repeated scanning for many times is avoided; different spectrums, energy spectrum analysis and micro-area scanning can be simultaneously carried out, so that the step time consumption in sample detection is greatly reduced. The invention can realize the approximate measurement speed with the optical method by improving the subversion of XPS detection flux, thereby realizing the synchronous measurement of multiple technologies and greatly improving the efficiency of wafer detection or measurement; greatly improves the collection efficiency of photoelectrons and can greatly shorten the detection time of a single sample.
Description
Technical Field
The invention belongs to the technical field of wafer surface measurement equipment, and particularly relates to wafer surface measurement equipment, a detection method and application.
Background
X-ray photoelectron spectroscopy (XPS) is to obtain photoelectron spectroscopy by taking X-rays as an incident source and testing the corresponding signal intensity of photoelectrons emitted from the surface of a sample under the linear scanning energy. The method is used for nondestructively characterizing the element components and valence states of the surface of the sample, and can also be used for quantitative analysis of surface elements, depth distribution information detection, interface dipole change, work function band gap and other physical information. High-end processes for integrated circuits are widely used as material measurement techniques in semiconductor manufacturing facilities.
The characterization process of XPS is as follows: the high-energy electron beam bombards an anode target (Al, mg and the like) to obtain X rays, irradiates the surface of a sample, generates photoelectrons due to photoelectric interaction, amplifies an electronic signal by using an electron multiplier tube or a microchannel plate system after the photoelectrons emitted from the surface of the sample are selected by energy, and converts the electronic signal into XPS spectrum through a series of signal processing.
The included angle between the electron energy analyzer and the sample surface is closely related to the interface structure of the sample surface, so that the angle needs to be fixed to ensure the accuracy of the test. Conventionally, by using a single-point small solid angle technical scheme, the signal-to-noise ratio is improved by increasing the test time (by increasing the number of cyclic scans), and the test accuracy is improved. The conventional XPS technology cannot meet the requirements for measurement/inspection throughput in the integrated circuit manufacturing process. The current production line can only adopt the mode of spot check to measure/detect. The patent proposes an inner ring type energy analyzer, which can ensure that the test flux is greatly increased under the condition that the direct included angle between the surface of a sample and the electron energy analyzer is unchanged, and can improve the measurement/detection efficiency.
When the traditional industrial production line adopts different characterization means on the sample, the sample needs to be respectively put into different characterization chambers, such as XPS SEM ellipsometry spectrometer and the like. The sample introduction/sampling process wastes a lot of time, and the individual characterization process also requires a certain time, respectively. Thus, the total measurement/detection time is very long. Thus, if different measurement/inspection techniques are integrated and inspected simultaneously, the overall measurement/inspection time will be greatly reduced. The high throughput XPS device for rapid wafer detection proposed in the previous patent uses an inner ring type energy analyzer, which has poor space utilization efficiency, and cannot realize in-situ integration of XPS and other different characterization means.
Through the above analysis, the problems and defects existing in the prior art are as follows:
(1) The conventional XPS has weak collection capability of photoelectric electrons and lower detection efficiency;
(2) The single sequential test between the traditional different measuring technologies is not only time-consuming for the single technology respectively, but also time-consuming for sample transfer between the different measuring technologies is increased;
(3) The ring energy analyzers of the previous patents are spatially poorly compatible with other metrology/inspection.
The difficulty of solving the problems and the defects is as follows: how to increase the electron collection solid angle to increase the detection flux; how to integrate different characterization techniques into one high-throughput XPS device.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides wafer surface measurement equipment, a detection method and application.
The invention is realized by a wafer surface measurement apparatus that can realize high throughput XPS detection, comprising:
the system comprises an energy analysis system, a data acquisition system, a sample module and a vacuum system;
the sample module is located at the center of the equipment, the vacuum system is connected to the lower part of the equipment, the energy analysis system surrounds the upper part of the sample module in an arc mode, and the data acquisition system and the energy analysis system are electrically connected to the computer terminal.
Further, the energy analysis system includes: a first X-ray source, a second X-ray source, a ring/multi-segment arc energy analyzer, an electron source, an electron beam, a back-scattered electron collector, a secondary electron collector, a laser, a light source, an optical fiber, an X-ray detector, a laser detector, a spectral detector, an electron lens system, an optoelectronic beam, a flange plate, and wiring;
further, the annular/multi-section arc-shaped energy analyzers are respectively distributed at the left side and the right side, and an electronic lens system, an photoelectron beam and mu metal are arranged in the annular/multi-section arc-shaped energy analyzers to prevent magnetic field penetration; a first X-ray source, a second X-ray source, a light source and a laser are distributed below the left energy analyzer, a secondary electron collector, an X-ray detector, a laser detector and a spectrum detector are distributed below the right energy analyzer, and all the components are connected with the sample module through optical fibers; an electron source, an electron beam and a back scattering electron collector are distributed in the middle of the two annular/multi-section arc-shaped energy analyzers, the electron beam is connected with the sample module, the electron source is connected above the photoelectron beam, and the back scattering electron collectors are distributed on the left side and the right side of the photoelectron beam.
Further, the sample module includes: the device comprises a sample, a sample table, a characterization chamber, an observation window, a camera, a transmission device, a gate valve, a rapid sample injection chamber, a broken valve and a heating sleeve;
further, the characterization chambers are interconnected by adopting multistage loadlock chambers at the center of the equipment and are used for realizing differential degradation of air pressure; the camera is arranged at the right upper part of the characterization chamber, and the sample table is arranged in the characterization chamber and can be lifted and deflected to meet the requirement of multifunctional detection; the periphery of the sample table for placing the sample on the sample table is provided with observation windows, and the position and the transmission condition of the sample table are monitored in real time through a camera; the rapid sample injection chamber is internally provided with a transmission device and is connected with the characterization chamber through a gate valve; the broken empty valve is arranged at the right lower part of the characterization chamber, and the heating sleeve is arranged at the right lower part of the characterization chamber to heat the characterization chamber.
Further, the vacuum system includes: ion pump, molecular pump + mechanical pump group, vacuum gauge;
further, the ion pump group, the molecular pump and the mechanical pump group and the vacuum gauge are distributed at the bottom of the rapid sample injection chamber, so that the chamber is maintained in an ultrahigh vacuum atmosphere.
Another object of the present invention is to provide a wafer surface measurement and detection method, the high throughput XPS detection method includes:
step one, irradiating a sample with X-rays to generate photoelectrons;
step two, photoelectrons enter the annular/multi-section arc annular energy analyzer at the same emergent angle and reach the electronic detector, and in the characterization process, the XPS detection step length can be set to be 0.05eV at minimum;
and thirdly, combining the collected photoelectron intensity with kinetic energy through a data processing system, converting the data into a relation between the photoelectron intensity and the combination energy, generating an XPS spectrogram, and obtaining a detection result based on the XPS spectrogram.
Further, the obtaining the detection result based on the XPS spectrogram in the third step includes: detecting a film component; detecting a change in the thickness and work function of the film; differences between points in the samples were determined.
In combination with the technical scheme and the technical problems to be solved, the technical scheme to be protected has the following advantages and positive effects:
1) The subversion of XPS detection flux is improved, and the speed of measurement is close to that of optical method, so that the synchronous measurement of multiple technologies can be realized, and the wafer detection or measurement efficiency is greatly improved.
The high-flux XPS equipment adopts a unique outer annular energy analyzer or a multi-segment circular arc annular energy analyzer, greatly increases the passage area of photoelectrons entering the annular energy analyzer under the condition of maintaining a detection angle, greatly improves the collection efficiency of the photoelectrons, and can greatly shorten the detection time of a single sample.
The chamber structure of the invention is of a unique design, has strong comprehensive analysis capability, can be added with components such as a (focusing) electron source, a light source, a detector and the like on the chamber, realizes the additional detection function, such as XRF, XRD, AES, SEM, EDS and the in-situ integration of analysis technologies such as ellipsometer and the like, and realizes the analysis of truly relevant data.
2) The sample stage provided by the invention can realize the lifting and rotation angle functions of the sample, and can be matched with a rotatable detector to realize in-situ characterization of XRD and ellipsometer and micro-area scanning of spectrum.
The wafer surface measurement equipment provided by the invention can simultaneously start the X-ray source, the electron source, the light source and the detector, realize simultaneous characterization among different energy spectrums and spectrums, greatly shorten the detection time of samples and avoid the time consumption of sample transmission among a plurality of chambers.
The wafer surface measurement equipment provided by the invention is externally connected with the rapid sample injection chamber, so that the sample injection and sampling processes of the sample can be realized under the condition that the vacuum of the chamber is not destroyed any more. The rapid sample injection chamber can be connected with each other by adopting a multi-stage loadlock cavity, and the sample injection time is reduced due to air pressure difference. The rapid sample injection chamber is provided with an independent pumping system, a mechanical arm and two transition systems (samples are fed in and discharged from the same direction).
3) The wafer surface measurement equipment provided by the invention is suitable for rapidly measuring the wafer in the integrated circuit manufacturing process.
4) According to the invention, through improving the collection solid angle of photoelectrons, the number of photoelectrons passing through the annular energy analyzer is greatly increased, the collection efficiency of the device on photoelectric signals can be greatly improved, and the time consumption caused by repeated scanning for many times is avoided; different spectrums, energy spectrum analysis and micro-area scanning can be simultaneously carried out, so that the time consumption of measuring/detecting steps is greatly reduced. The equipment provided by the invention can be widely applied to wafer detection and measurement of high-end manufacturing processes of integrated circuits.
5) The technical scheme of the invention fills the technical blank in the domestic and foreign industries: the invention provides wafer surface measuring equipment suitable for rapid detection in integrated circuit industrial production for the first time. The annular energy analyzer of the traditional XPS equipment adopts a single-point small solid angle, so that photoelectron information under a certain angle is accurately displayed, angle resolution XPS can be realized by rotating the angle of the sample, tests of different test angles can be realized, layering information of a stack sample is obtained, and the annular energy analyzer is very suitable for scientific research application, and is the most extensive market of XPS. The integrated circuit Cheng Liangce is required, angle resolution information is not needed, and the accuracy requirement on signals is not high, so that the invention adopts a multi-section arc/ring-shaped energy analyzer, and the included angle between the ring-shaped energy analyzer and a sample is fixed because the included angle between the ring-shaped channel and the surface of the sample is consistent. This greatly increases the efficiency of photoelectron collection. Furthermore, due to the unique structure of the XPS equipment, the in-situ integration of analysis technologies such as XRF, XRD, AES, SEM, EDS and ellipsometers can be further realized on the basis of rapid XPS scanning. And synchronous scanning of the spectrum and the energy spectrum is realized.
6) The technical scheme of the invention solves the technical problems that people are always desirous of solving but are not successful all the time: the high-throughput XPS equipment provided by the invention is used for measuring and detecting wafers in a high-end integrated circuit manufacturing production line. At present, the chemical/material measurement is very critical in the integrated circuit manufacturing line, the most core equipment is XPS, but at present, the industrial industry only applies a small amount, and the bottleneck is that the detection speed is too slow to meet the requirement of wafer manufacturing. At present, the electricity accumulation is carried out the compromise scheme adopted by integrated circuit manufacturers such as the international center core is sampling inspection. Therefore, the industry is in need of a high throughput rapid inspection XPS instrument for high-end process measurement and inspection.
Drawings
FIG. 1 is a schematic cross-sectional view of a wafer surface measurement apparatus according to an embodiment of the present invention;
FIG. 2 is a top view of a ring-shaped energy analyzer provided by an embodiment of the present invention;
fig. 2 (a) is a top view of the annular energy analyzer; (b) (c) are top views of two multi-segment arcuate ring energy analyzers;
FIG. 3 is a schematic diagram of a wafer surface measurement apparatus according to an embodiment of the present invention;
FIG. 4 is a flow chart of a wafer surface measurement and inspection method according to an embodiment of the present invention;
in the figure: 1. a first X-ray source; 2. x-rays; 3. a sample; 4. a sample stage; 5. an electronic lens system; 6. an optoelectronic beam; 7. a ring-shaped energy analyzer; 8. a flange plate; 9. wiring; 10. a data system; 11. an observation window; 12. a camera; 13. a transmission device; 14. a gate valve; 15. an ion pump; 16. molecular pump + mechanical pump set; 17. a vacuum gauge; 18. a rapid sample injection chamber; 19. a broken valve; 20. a heating jacket; 21. an electron source; 22. an electron beam; 23. a back-scattered electron collector; 24. a secondary electron collector; 25. a second X-ray source; 26. a laser; 27. a light source; 28. an optical fiber; 29. an X-ray detector; 30. a laser detector; 31. a spectrum detector; 32. a chamber.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The wafer surface measurement device provided by the embodiment of the invention can realize high-flux XPS detection and comprises:
an X-ray source for emitting X-rays to irradiate the sample to generate photoelectrons;
photoelectrons generated by excitation are collected by an energy analysis module, the module adopts annular/multi-section arc collection angles, the collection efficiency of the photoelectrons is greatly improved, and the annular/multi-section arc design ensures that the included angles between the sample and the detector are consistent;
photoelectrons are collected by the annular/multi-section arc detector after passing through the annular energy analyzer and are converted into XPS spectrograms through the data processing module;
monitoring the state of the sample in the transmission process through a real-time monitoring module;
the rapid sample injection module is used for carrying out rapid sample injection/sample discharge by utilizing two groups of rapid sample injection chambers, the inlet and outlet directions of samples are consistent, and the rapid sample injection chambers are connected with the reaction chamber through a gate valve;
the transmission module is used for realizing the transmission of the sample between the rapid sample injection chamber and the chamber by utilizing the transmission device;
the vacuum module is respectively arranged in the testing/characterization chamber and the rapid sample injection chamber, the characterization chamber can be composed of a mechanical pump group, a molecular pump, an ion pump and a titanium sublimation pump, and the chamber can be maintained in an ultrahigh vacuum atmosphere. The rapid sample injection chamber is smaller in chamber and is provided with an independent vacuum pump set;
the heating module is used for heating the cavity by using the heating device, and when the cavity recovers the ultrahigh vacuum atmosphere after being broken, the cable is required to be removed, the cavity is heated and represented, and the heating time is longer than 12 hours;
and the sample platform module is used for realizing lifting and deflection of the sample and meeting the requirement of multifunctional detection.
The annular energy analyzer adopts an outer annular structure, an electron source is arranged at the central position of the annular energy analyzer, and an electron detector, a light source, an optical fiber and a spectrum detector are added to the annular energy analyzer; the outer side of the characterization chamber is provided with a reserved flange interface which can be used as an interface of the accessory; the reserved flange plate interface can be positioned outside the characterization chamber or among the multi-section arc-shaped annular energy analyzers and is used for realizing the integration of the multifunctional surface analysis technology.
The annular energy analyzer adopts a multi-segment arc structure, an X-ray source, a laser, an X-ray detector and a laser detector are additionally arranged among the multi-segment arc annular energy analyzers, a reserved flange interface is arranged on the outer side of the characterization cavity, and the annular energy analyzer can be used as an interface of the above accessories and is used for realizing the integration of analysis functions of an in-situ XRD (X-ray diffraction) and an ellipsometer.
The annular energy analyzer is provided with mu metal therein for preventing the magnetic field from penetrating into the annular energy analyzer.
The vacuum module utilizes a combination mode of a molecular pump and a mechanical pump, and the ion pump and the titanium sublimation pump machine pump the chamber to ultrahigh vacuum<10 -7 The titanium sublimation pump was briefly turned on and this ultra-high vacuum atmosphere was maintained.
Further, the wafer surface measuring equipment further comprises a reserved flange interface, and an imaging fluorescent screen and an X-ray detector are additionally arranged at the reserved flange interface and used for realizing EDS and XRF function integration.
The rapid sample injection chamber is interconnected by adopting a multi-stage loadlock chamber and is used for realizing differential degradation of air pressure; the chamber is provided with an observation window for monitoring the position and the transmission condition of the sample stage in real time through the camera.
As shown in fig. 1 to 3, the wafer surface measurement apparatus provided in the embodiment of the present invention is equipped with an X-ray source 1 (Al/Mg target for the X-ray source 1 is commonly used), an annular energy analyzer 7/multi-segment arc annular energy analyzer, an annular detector/multi-segment arc detector, a data acquisition system, a real-time monitoring device, a rapid sampling chamber 18, a transmission device, a vacuum system, a heating device, and a reserved flange interface.
In addition to the above components, the present apparatus may be provided with: the electron source 21, the back scattering electron collector 23, the secondary electron collector 24, the laser 26, the light source 27, the X-ray detector 29, the laser detector 30, the spectrum detector 31 and other components are used for additionally realizing the characterization functions of XRF, XRD, AES, SEM and ellipsometers on the basis of high-flux XPS equipment;
mu metal is provided in the annular energy analyser 7 to prevent penetration of the magnetic field into the analyser;
the wafer surface measurement equipment is provided with a sample stage, and the sample stage 4 can realize lifting and deflection of a sample so as to meet the requirement of multifunctional detection;
the high-flux XPS equipment needs to calibrate the work function of the system before characterization and after vacuum recovery after cavity opening;
the ion pump 15 and the titanium sublimation pump the chamber to ultra-high vacuum by utilizing a combination mode of a molecular pump and a mechanical pump 16<10 -7 The titanium sublimation pump is only required to be turned on briefly, and the ultra-high vacuum atmosphere is maintained;
when the ultra-high vacuum is restored after the cavity 32 is opened, the cable is removed and the cavity 32 is heated for a period of time set to be >12 hours.
The device is provided with two groups of rapid sample injection chambers 18, the rapid sample injection chambers 18 are provided with independent pumping systems and vacuum detection devices, the transmission of samples between the rapid sample injection chambers 18 and the chambers 32 can be realized through the transmission devices, the inlet and outlet directions of the samples are consistent, and the rapid sample injection chambers 18 are connected with the reaction chambers through gate valves 14;
the rapid sample injection chamber 18 is interconnected by adopting a multistage loadlock chamber, so that differential degradation of air pressure is realized;
the chamber 32 is provided with an observation window 11, so that the position and the transmission condition of the sample table 4 can be monitored in real time through the camera 12;
the annular energy analyzer 7 may be of an outer annular configuration or of a multi-segment arcuate configuration:
1. the annular energy analyzer 7 adopts an outer annular structure, can be used for placing components such as an electron source 21 and the like at the central position, further releases the peripheral space of the characterization chamber, and can be further added with structures such as an electron detector, a light source 27, an optical fiber 28, a spectrum detector 31 and the like, thereby realizing the integration of multifunctional surface analysis technology.
2. The ring-shaped energy analyzer 7 adopts a multi-segment arc-shaped structure, and various components such as a second X-ray source 25 (Cu and Mo targets are commonly used), a laser 26, an X-ray detector 29, a laser detector 30 and the like can be additionally arranged among the arc-shaped ring-shaped energy analyzers, so that the components can further realize the integration of in-situ XRD, ellipsometry and other analysis functions. While maintaining high throughput XPS detection, the maximum efficiency makes use of the chamber space, enabling integration of multiple additional functions.
The wafer surface measurement equipment can perform SEM and AES characterization, the chamber of the invention has unique structural design, the electron source 21 and the secondary electron collector 24 can be arranged at the center of the chamber 32, and the secondary electron collector 24 is arranged at the side wall of the chamber 32, so that the in-situ SEM detection can be further realized. By combining the annular energy analyzer 7, AES in-situ characterization can be realized;
an imaging fluorescent screen, an X-ray detector 29 (for component analysis) and the like can be added at the interface of the reserved flange 8, so that the functional integration of EDS, XRF and the like can be realized;
the wafer surface measurement device can be added with ellipsometer function, and a light source (laser 26), a polarizer, a compensator, an analyzer and a detector are arranged in the detection chamber 32, so that the angles between the laser, the detector and the surface of the sample can be fixed according to specific substrate materials in the integrated circuit, and the wafer surface measurement device can also be designed into an angle-adjustable mode. Through the module, the thickness and optical coefficient parameters of the film can be measured in situ;
the wafer surface measuring equipment is provided with a light source 27 (ultraviolet, visible and infrared), and the light source is transmitted into a characterization chamber 32 by an optical fiber 28, and micro-area analysis can be realized through the position adjustment of the sample stage 4;
the wafer surface measurement equipment can simultaneously carry out different energy spectrums, analysis and characterization of the spectrums, and interference signals can be eliminated by deducting the back.
The embodiment of the invention provides quick scanning high-flux wafer surface measurement equipment which comprises an X-ray source, an annular energy analyzer/a multi-section arc-shaped annular energy analyzer, an annular detector/a multi-section arc-shaped detector, a data acquisition system, a real-time monitoring device, a quick sample injection chamber, a transmission device, a vacuum system, a heating device and a reserved flange interface, wherein the X-ray source is arranged on the annular energy analyzer;
in addition to the above components, the present apparatus may be provided with: an electron source, a back scattered electron collector, a secondary electron collector, a laser, a light source, an X-ray detector, a laser detector, a spectrum detector and the like.
The annular energy analyzer/multi-segment arc annular energy analyzer has high efficiency of collecting photoelectrons, and reduces scanning time consumption for scanning for a plurality of times to improve the signal to noise ratio of the XPS spectrogram.
The wafer surface measurement equipment is provided with the rapid sample injection chambers, and the rapid sample injection chambers at the two sides of the chamber are respectively used for sample injection and sample discharge, so that the two sample injection chambers are in the same direction, and the sample transmission time in the characterization process is greatly shortened.
The wafer surface measurement equipment is provided with a transmission device, and the transmission of the sample between the characterization chamber and the rapid sample introduction chamber can be realized through the transmission device.
The sample table can realize operations such as translation/rotation/lifting;
the real-time monitoring module consists of an observation window, a camera and a display screen, and can realize the regulation and control and real-time monitoring of the characterization position of the sample;
the wafer surface measurement equipment can simultaneously perform XPS/AES spectrum scanning and SEM spectrum scanning, the two characterization areas are different, and the in-situ characterization of different technical means of each area of the sample is completed by combining a sample table;
the wafer surface measurement equipment is provided with a broken valve for daily maintenance and repair of the equipment;
the wafer surface measurement equipment can be provided with a second X-ray source 25 (common Cu and Mo targets), a laser, an X-ray detector, a laser detector and the like among the plurality of sections of arc detectors, and the components can further realize the integration of in-situ XRD, ellipsometry and the like.
The embodiment of the invention provides multifunctional integrated wafer surface measurement equipment which can realize high-flux XPS detection and further realize in-situ integration of analysis technologies such as XRF, XRD, AES, SEM, EDS, ellipsometers and the like.
The invention provides a high-flux XPS detection method, which comprises the steps of generating X-rays 2 by using a first X-ray source 1, irradiating a sample 3 by using the X-rays to generate an photoelectron beam 6, enabling the photoelectron beam to enter an annular energy analyzer 7 through an electron lens system 5, finally converting test data into an XPS spectrogram through a data system 10, and obtaining a measurement result based on the XPS spectrogram analysis.
As shown in fig. 1, the wafer measurement device provided by the invention is used for a component characterized by high-throughput XPS, and the temperature control interval of the sample stage 4 is 77-1000K; which is freely movable/rotatable for measuring different positions of the sample;
the electron lens system 5 comprises a plurality of groups of optical lenses, so that focusing and kinetic energy regulation of electron beams/ion beams can be realized;
the annular energy analyzer 7 adopts an outer annular structure, a three-dimensional schematic diagram is shown in fig. 3, a top view configuration is shown in fig. 2, the annular energy analyzer can be composed of a plurality of sections of annular chambers, and due to the unique structure, the annular energy analyzer adopts an outer annular structure, the space utilization rate of equipment is high, and the spare part can be added with parts of other characterization technologies, so that the integration of various in-situ technologies is realized.
The characterization chamber is connected with a data system through a flange 8 and a wiring 9;
the data system 10 is used for converting test data into XPS spectrograms so that the test data is visualized;
the rapid sample injection chamber 18 can shorten sample injection/sampling time of the sample in the XPS test process;
the transmission device 13 can realize the transfer/transportation of the sample between the characterization chamber and the rapid sample injection chamber;
in the transporting process of the sample, the combination of the observation window 11 and the camera 12 realizes more accurate transmission of the sample and further regulates and controls the characterization position of the sample;
the gate valve 14 is positioned between the rapid sample injection chamber and the characterization chamber to separate the two chambers;
the vacuum system consists of an ion pump 15, a molecular pump and mechanical pump group 16 and a vacuum gauge 17, wherein the vacuum gauge can consist of a resistance gauge and an ion gauge, and a full-scale vacuum gauge can be adopted;
the air break valve 19 is used for introducing air when the cavity is opened, so that the vacuum atmosphere of the cavity is broken;
the heating sleeve 20 is used for integrally baking the cavity when the testing system is restored after the cavity is opened;
in addition to the above components, the present apparatus may be provided with: the components of the electron source 21, the back scattering electron collector 23, the secondary electron collector 24, the laser 26, the light source 27, the X-ray detector 29, the laser detector 30, the spectrum detector 31 and the like can further realize the characterization functions of XRF, XRD, AES, SEM and ellipsometers through the excitation sources and the corresponding detectors.
As shown in fig. 4, a method for detecting a wafer surface measurement apparatus according to an embodiment of the present invention includes:
s101: irradiating the sample with X-rays to generate photoelectrons;
s102: photoelectrons enter the annular/multi-section arc annular energy analyzer at the same emergent angle and reach the electronic detector;
s103: and combining the collected photoelectron intensity with kinetic energy through a data processing system, converting the data into a relation between the photoelectron intensity and the combination energy, and generating an XPS spectrogram.
In step S103 in the embodiment of the present invention, obtaining a detection result based on the XPS spectrogram includes: detecting a film component; detecting a change in the thickness and work function of the film; differences between points in the samples were determined. The foregoing is merely illustrative of specific embodiments of the present invention, and the scope of the invention is not limited thereto, but any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention will be apparent to those skilled in the art within the scope of the present invention.
Claims (5)
1. A wafer surface measurement apparatus, comprising:
the system comprises an energy analysis system, a data acquisition system, a sample module and a vacuum system;
the energy analysis system surrounds the upper part of the sample module in an arc manner, and the data acquisition system and the energy analysis system are electrically connected to the computer terminal;
the energy analysis system includes: the device comprises a first X-ray source, a second X-ray source, an annular energy analyzer, an electron source, an electron beam, a back scattering electron collector, a secondary electron collector, a laser, a light source, an optical fiber, an X-ray detector, a laser detector, a spectrum detector, an electron lens system, an optoelectronic beam, a flange plate and wiring, wherein the annular energy analyzer is of a multi-section arc structure; the characterization chamber is connected with a data processing system through a flange plate and a wiring, and the data processing system is used for converting test data into a spectrogram so as to visualize the test data;
the annular energy analyzers adopting the multi-section arc-shaped structure are respectively distributed at the left side and the right side, and an electronic lens system, an photoelectron beam and mu metal are arranged in the annular energy analyzers to prevent magnetic field penetration; a first X-ray source, a second X-ray source, a light source and a laser are distributed below the left energy analyzer, a secondary electron collector, an X-ray detector, a laser detector and a spectrum detector are distributed below the right energy analyzer, and all the components are connected with the sample module through optical fibers; an electron source, an electron beam and a back scattering electron collector are distributed in the middle of the two annular energy analyzers which adopt a multi-section arc-shaped structure, the electron beam is connected with the sample module, the electron source is connected above the photoelectron beam, and the back scattering electron collectors are distributed on the left side and the right side of the photoelectron beam;
the sample module includes: the device comprises a sample, a sample table, a characterization chamber, an observation window, a camera, a transmission device, a gate valve, a rapid sample injection chamber, a broken valve and a heating sleeve;
the characterization chamber is arranged at the right center of the equipment, and is interconnected by adopting a multistage loadlock chamber for realizing differential degradation of air pressure; the camera is arranged at the right upper part of the characterization chamber, and the sample table is arranged in the characterization chamber and can be lifted and deflected to meet the requirement of multifunctional detection; placing a sample on the sample table, wherein observation windows are arranged around the sample table, and monitoring the position and the transmission condition of the sample table in real time through a camera; the rapid sample injection chamber is internally provided with a transmission device and is connected with the characterization chamber through a gate valve; the air breaking valve is arranged at the right lower part of the characterization chamber, and the heating sleeve is arranged at the right lower part of the characterization chamber to heat the characterization chamber;
the rapid sample injection chamber is used for shortening sample injection and sampling time of a sample in an X-ray photoelectron spectroscopy (XPS) test process; the transmission device is used for realizing the transmission and transportation of the sample between the characterization chamber and the rapid sample injection chamber; in the transportation process of the sample, the combination of the observation window and the camera realizes more accurate transmission of the sample, and further regulates and controls the characterization position of the sample; the gate valve is positioned between the rapid sample injection chamber and the characterization chamber to separate the two chambers;
an X-ray source for emitting X-rays to irradiate the sample to generate photoelectrons;
an energy analyzer for collecting photoelectrons excited from the sample, converting the test data into an X-ray photoelectron spectroscopy (XPS) spectrum via a data processing system, and obtaining a measurement result based on the X-ray photoelectron spectroscopy (XPS) spectrum analysis;
the vacuum system is used to maintain the characterization chamber at an ultra-high vacuum atmosphere.
2. The wafer surface measurement apparatus of claim 1, wherein the vacuum system comprises: ion pump, molecular pump + mechanical pump group, vacuum gauge;
the ion pump group, the molecular pump, the mechanical pump group and the vacuum gauge are distributed at the bottom of the rapid sample injection chamber, and the characterization chamber is maintained in an ultrahigh vacuum atmosphere.
3. A high throughput X-ray photoelectron spectroscopy (XPS) detection method for implementing the wafer surface measurement apparatus of claim 1, comprising the steps of:
step one: irradiating the sample with X-rays to generate photoelectrons;
step two: photoelectrons enter the annular/multi-segment arc annular energy analyzer at the same exit angle and reach the electronic detector, and in the characterization process, the minimum X-ray photoelectron spectroscopy (XPS) detection step length is set to be 0.05eV;
step three: and combining the acquired photoelectron intensity with kinetic energy through a data processing system, converting the data into a relation between the photoelectron intensity and the combined energy, generating an X-ray photoelectron spectroscopy (XPS) spectrogram, and obtaining a detection result based on the X-ray photoelectron spectroscopy (XPS) spectrogram.
4. The method of claim 3, wherein obtaining the detection result based on the X-ray photoelectron spectroscopy (XPS) spectrum in the third step comprises: detecting a film component; detecting a change in the thickness and work function of the film; differences between points in the samples were determined.
5. An information data processing terminal for implementing the high-throughput X-ray photoelectron spectroscopy (XPS) detection method according to claim 3.
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| CN202211656214.5A CN115791862B (en) | 2022-12-22 | 2022-12-22 | Wafer surface measurement equipment, detection method and application |
| PCT/CN2023/140492 WO2024131873A1 (en) | 2022-12-22 | 2023-12-21 | Wafer surface measurement device, detection method, and application |
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