CN115789751A - Heating equipment and control method thereof - Google Patents
Heating equipment and control method thereof Download PDFInfo
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- CN115789751A CN115789751A CN202211556526.9A CN202211556526A CN115789751A CN 115789751 A CN115789751 A CN 115789751A CN 202211556526 A CN202211556526 A CN 202211556526A CN 115789751 A CN115789751 A CN 115789751A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 194
- 238000000034 method Methods 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 156
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 156
- 239000010703 silicon Substances 0.000 claims abstract description 156
- 238000012544 monitoring process Methods 0.000 claims abstract description 6
- 230000015654 memory Effects 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 238000013461 design Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000004378 air conditioning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
- Y02B30/70—Efficient control or regulation technologies, e.g. for control of refrigerant flow, motor or heating
Abstract
The invention provides heating equipment and a control method thereof, wherein the control method of the heating equipment comprises the following steps: monitoring the current temperature of a target controlled silicon for controlling the heating body to heat; judging whether the current temperature of the target silicon controlled rectifier exceeds a preset temperature or not; when the current temperature of the target silicon controlled rectifier exceeds the preset temperature, the other silicon controlled rectifier connected with the heating body is switched to control the heating body to heat, and the current temperature of the other silicon controlled rectifier is smaller than the preset temperature. Carry out frequency conversion heating control to the PTC heat-generating body through adopting the silicon controlled rectifier, on this basis, through the mode of a plurality of silicon controlled rectifiers alternating control heating, not only realized the effective heating control to the PTC heating body, effectively avoided the problem that the silicon controlled rectifier generates heat in addition, reduced the design cost who adds silicon controlled rectifier heat radiation structure by a wide margin, finally realize the low-cost frequency conversion control to the PTC heating body.
Description
Technical Field
The invention relates to the field of air conditioning, in particular to heating equipment and a control method thereof.
Background
Along with the increasing importance of people on the quality of air conditioning, various air conditioning equipment also come into play. Among them, the warm air blower is very popular with users because of its advantages such as fast heating, wide heat radiation range, etc. The heating principle of the fan heater is to heat a PTC heating element inside the fan heater, and heat accumulated inside the fan heater is actively sent out through a built-in fan. PTC heater refers to semiconductor material or device with large positive temperature coefficient, wherein PTC is the abbreviation of positive temperature coefficient, which means positive temperature coefficient. For a warm air blower, the main energy consumption of the warm air blower is both on a PTC heating element and a motor, in the prior art, the PTC heating element basically adopts a relay as a switch to control the PTC heating element to work, but the situation that the frequency conversion control cannot be realized, so that the energy is wasted frequently occurs; if the frequency conversion control is carried out on the PTC heating element by using the controllable silicon, the heat dissipation design needs to be added to the controllable silicon, and the production cost is greatly improved.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects that in the prior art, a relay is used as a switch to control a PTC heating element to work, the frequency conversion control cannot be realized, the energy waste situation frequently occurs, and the production cost is greatly increased due to the fact that a heat dissipation design needs to be added for a silicon controlled rectifier, so that the heating equipment and the control method thereof are provided.
According to a first aspect, an embodiment of the present invention provides a method for controlling a heating device, where ZLSQ20228480
The heating equipment comprises a heating body and a plurality of controllable silicon used for heating and controlling the heating body, and each controllable silicon is connected with the heating body, and the method comprises the following steps:
monitoring the current temperature of a target controlled silicon for controlling the heating body to heat;
judging whether the current temperature of the target controllable silicon exceeds a preset temperature or not;
when the current temperature of the target silicon controlled rectifier exceeds the preset temperature, switching to another silicon controlled rectifier connected with the heating body to control the heating body to heat, wherein the current temperature of the other silicon controlled rectifier is lower than the preset temperature.
Optionally, the method further comprises:
when the current temperature of the target silicon controlled rectifier does not exceed the preset temperature, the working time of the target silicon controlled rectifier is obtained;
judging whether the working time of the target silicon controlled rectifier exceeds a preset time threshold value or not;
and when the working time does not exceed the preset time threshold, heating the heating body by adopting the target thyristor.
Optionally, the method further comprises:
when the working time exceeds the preset time threshold, switching to another silicon controlled rectifier connected with the heating body to control the heating body to heat, wherein the current temperature of the other silicon controlled rectifier is lower than the preset temperature.
Optionally, the switching to another thyristor connected to the heating body controls the heating body to heat, including:
acquiring the current temperature corresponding to each controllable silicon;
and comparing the current temperature of each silicon controlled rectifier, determining the silicon controlled rectifier with the lowest current temperature as the silicon controlled rectifier to be switched, and switching to the silicon controlled rectifier to be switched to control the heating body to heat.
ZLSQ20228480
Optionally, before the monitoring a current temperature of a target thyristor that controls the heating body to heat, the method further includes:
acquiring the current temperature corresponding to each controllable silicon;
comparing the current temperature of each controllable silicon, and determining the controllable silicon with the lowest current temperature as a target controllable silicon;
and heating and controlling the heating body based on the target silicon controlled rectifier.
Optionally, the duty ratio of a first thyristor is adjusted to perform heating control on the heating body, and the first thyristor is a thyristor for performing heating control on the heating body at present.
According to a second aspect, an embodiment of the present invention provides a heating device, where the heating device includes a heating body and a plurality of thyristors for heating and controlling the heating body, and each thyristor is connected to the heating body, and the heating device further includes:
a controller, the controller comprising a memory and a processor, the memory and the processor being communicatively coupled to each other, the memory having stored therein computer instructions, and the processor executing the computer instructions to perform the method of the first aspect, or any one of the optional embodiments of the first aspect.
Optionally, the heating apparatus further includes: controlled switches and temperature acquisition modules which are arranged corresponding to the controllable silicon one by one, wherein,
the first end of the controlled switch is connected with the controllable silicon, the second end of the controlled switch is connected with the heating body, the control end of the controlled switch is connected with the controller, and the controller controls the heating body by controlling the on-off switching of the controlled switch and the controllable silicon correspondingly connected with the controlled switch;
the temperature acquisition module is suitable for acquiring the current temperature of the corresponding controllable silicon and sending the current temperature to the controller.
ZLSQ20228480
Optionally, the heating device is a fan heater.
Optionally, the temperature acquisition module is a thermistor.
The technical scheme of the invention has the following advantages:
according to the heating equipment and the control method thereof provided by the invention, the current temperature of the target controllable silicon for heating the heating body is monitored and controlled; judging whether the current temperature of the target silicon controlled rectifier exceeds a preset temperature or not; when the current temperature of the target silicon controlled rectifier exceeds the preset temperature, switching to another silicon controlled rectifier connected with the heating body to control the heating body to heat, wherein the current temperature of the other silicon controlled rectifier is lower than the preset temperature. Carry out frequency conversion heating control to the PTC heat-generating body through adopting the silicon controlled rectifier, on this basis, through the mode of a plurality of silicon controlled rectifiers alternating control heating, not only realized the effective heating control to the PTC heating body, effectively avoided the problem that the silicon controlled rectifier generates heat in addition, reduced the design cost who adds silicon controlled rectifier heat radiation structure by a wide margin, finally realize the low-cost frequency conversion control to the PTC heating body.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural view of a heating apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a controller according to an embodiment of the present invention;
fig. 3 is a flowchart of a control method of a heating apparatus according to an embodiment of the present invention;
ZLSQ20228480
fig. 4 is a schematic diagram of a control structure of a heating apparatus based on a dual thyristor according to an embodiment of the present invention;
fig. 5 is a control logic diagram of a control method of heating equipment according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be connected through the inside of the two elements, or may be connected wirelessly or through a wire. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the invention provides heating equipment, as shown in figure 1, the heating equipment comprises a heating body 1 and a plurality of controllable silicon 2 used for heating and controlling the heating body 1, and each controllable silicon 2 is ZLSQ20228480
With heating body 1 is connected, heating equipment still includes:
and the controller 3 is suitable for controlling the on-off of each controllable silicon 2. Specifically, in practical applications, the controller 3 includes a processor 901 and a memory 902, and the memory 902 and the processor 901 are communicatively connected to each other, where the processor 901 and the memory 902 may be connected by a bus or by other means, and fig. 2 illustrates an example of a connection by a bus.
The memory 902, which is a non-transitory computer-readable storage medium, may be used to store non-transitory software programs, non-transitory computer-executable programs, and modules, such as program instructions/modules corresponding to the methods of the embodiments of the present invention. The processor 901 executes various functional applications and data processing of the processor 901 by executing non-transitory software programs, instructions and modules stored in the memory 902, i.e., implements the methods in the method embodiments described below.
The memory 902 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created by the processor 901, and the like. Further, the memory 902 may include high speed random access memory, and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid state storage device. In some embodiments, memory 902 may optionally include memory located remotely from processor 901, which may be connected to processor ZLSQ20228480 via a network
901. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
One or more modules are stored in the memory 902 and when executed by the processor 901 perform the methods in the method embodiments described below.
The details of the controller 3 can be understood by referring to the corresponding related descriptions and effects in the following method embodiments, and are not described herein again.
Specifically, in practical applications, the heating body 1 of the embodiment of the present invention is a PCT heating body, and in addition, the heating body may be another type of heating body as long as the heating function can be achieved, and the present invention is not limited thereto.
Specifically, in an embodiment, the heating apparatus further includes: controlled switches 21 and temperature acquisition modules 22 which are arranged corresponding to the controllable silicon 2 one by one, wherein,
the first end of the controlled switch 21 is connected with the controllable silicon 2, the second end of the controlled switch is connected with the heating body 1, the control end of the controlled switch is connected with the controller 3, and the controller 3 controls the heating body 1 to be heated by controlling the on-off of the controlled switch 21 to switch the controllable silicon 2 correspondingly connected with the controlled switch. The type of the controlled switch 21 may be set according to actual requirements, and for example, the controlled switch 21 may be a MOS transistor, a triode, or the like. The details of the controlled switch 21 are described in the following method embodiments, and are not repeated herein.
The temperature acquisition module 22 is adapted to acquire the current temperature of the thyristor 2 corresponding thereto and send the current temperature to the controller 3.
Specifically, in one embodiment, the temperature acquisition module 22 is a thermistor. In practical application, the pins of the controllable silicon 2 are coated with copper, a thermistor is additionally arranged near the pins, and an electric signal related to temperature can be obtained through the characteristics of the thermistor.
ZLSQ20228480
The details of the temperature acquisition module 22 refer to the related description in the following method embodiments, and are not repeated herein.
Specifically, in one embodiment, the heating device is a fan heater. In practical application, the heating equipment can also be any equipment aiming at controlling the PTC heating element by using the silicon controlled rectifier 2 to realize frequency conversion control and energy conservation.
For further description of the heating equipment, reference is made to the following description of embodiments of a control method for heating equipment, and details are not repeated here.
Through the cooperative cooperation of the components, the heating equipment provided by the embodiment of the invention controls the PTC heating element to be heated in a frequency conversion manner by adopting the controllable silicon 2, and on the basis, the heating equipment not only realizes the effective heating control of the PTC heating element, but also effectively avoids the heating problem of the controllable silicon 2 by adopting a manner of alternately controlling the heating by a plurality of controllable silicon 2, greatly reduces the design cost of additionally arranging the controllable silicon 2 heat dissipation structure, and finally realizes the low-cost frequency conversion control of the PTC heating element.
The embodiment of the invention provides a control method of heating equipment, the heating equipment comprises a heating body 1 and a plurality of controllable silicon 2 used for heating and controlling the heating body 1, and each controllable silicon 2 is connected with the heating body 1, as shown in figure 3, the control method of the heating equipment specifically comprises the following steps:
step S101: and monitoring the current temperature of the target silicon controlled rectifier for controlling the heating body to heat.
Step S102: and judging whether the current temperature of the target controllable silicon exceeds a preset temperature.
Specifically, in practical application, the preset temperature can be the maximum temperature value in a temperature interval required by the normal operation of the target silicon controlled rectifier, and the normal operation temperature interval of the target silicon controlled rectifier can be directly read through a specification (namely an application specification) of the component.
Step S103: when the current temperature of the target controllable silicon exceeds the preset temperature, the ZLSQ20228480 is switched
And controlling the heating body to heat by using another controllable silicon connected with the heating body, wherein the current temperature of the other controllable silicon is lower than the preset temperature.
Specifically, in practical application, two or more controllable silicon can be set to alternately control the same heating body, so that a better heat dissipation circulation effect is achieved, efficient heating control of heating equipment is finally achieved, and the use satisfaction of users is improved.
In the embodiment of the present invention, two thyristors are used for respectively controlling one heating body, as shown in fig. 4, a controller (i.e., a chip IC in the figure) controls on/off of the thyristor a and the thyristor B, so as to control whether the PCT heating body operates, and when the current temperature of the thyristor a exceeds a preset temperature, the chip IC controls to switch to the thyristor B to operate, so as to control the PCT heating body (i.e., the load in the figure) to heat, taking the thyristor a as an example. According to the embodiment of the invention, the alternating working mode of the silicon controlled rectifier is adopted, so that the high-temperature problem caused by continuous passing of a large current by the silicon controlled rectifier is effectively avoided.
By executing the steps, the control method of the heating equipment provided by the embodiment of the invention controls the PTC heating body to be heated in a frequency conversion manner by adopting the controllable silicon, and on the basis, the heating mode is controlled by a plurality of controllable silicon alternately, so that the effective heating control of the PTC heating body is realized, the heating problem of the controllable silicon is effectively avoided, the design cost of adding the controllable silicon heat dissipation structure is greatly reduced, and finally the low-cost frequency conversion control of the PTC heating body is realized.
Specifically, in an embodiment, the method for controlling heating equipment provided in the embodiment of the present invention further includes the following steps:
step S201: and when the current temperature of the target silicon controlled rectifier does not exceed the preset temperature, acquiring the working time of the target silicon controlled rectifier.
Step S202: and judging whether the working time of the target controllable silicon exceeds a preset time threshold value.
ZLSQ20228480
Step S203: and when the working time does not exceed the preset time threshold, heating the heating body by adopting the target silicon controlled rectifier.
Specifically, in practical application, considering that the situation that the thyristor continues to have an excessive current even in a long-time working state, at this time, although the current temperature may not exceed the preset temperature, a high-temperature hidden danger still exists, therefore, in the embodiment of the present invention, when it is determined that the current temperature of the target thyristor does not exceed the preset temperature, the working time of the target thyristor is obtained, and when the working time of the target thyristor does not exceed the preset time threshold, the target thyristor continues to work.
Specifically, in an embodiment, the method for controlling heating equipment provided in the embodiment of the present invention further includes the following steps:
step S301: when the working time exceeds the preset time threshold, switching to another silicon controlled rectifier connected with the heating body to control the heating body to heat, wherein the current temperature of the other silicon controlled rectifier is lower than the preset temperature.
Specifically, in practical application, when the working time of the target silicon controlled rectifier exceeds a preset time threshold, the chip IC controls the target silicon controlled rectifier to stop working, and switches to another silicon controlled rectifier connected with the PCT heating body, so that the other silicon controlled rectifier controls the PCT heating body to heat, and the current temperature of the other silicon controlled rectifier is lower than the preset temperature. Through N a plurality of PTC heat-generating bodies of silicon controlled rectifier control, adopt the mode of N silicon controlled rectifier alternate work, not only realized the frequency conversion control to heating equipment, effectively avoided the continuous problem of generating heat that silicon controlled rectifier control PTC generates heat moreover, need not additionally to set up heat radiation structure for the silicon controlled rectifier, reduce design cost by a wide margin.
Specifically, in an embodiment, the step S103 is switched to another thyristor connected to the heating body to control the heating body to heat, and specifically includes the following steps:
step S401: and acquiring the current temperature corresponding to each controllable silicon.
ZLSQ20228480
Step S402: and comparing the current temperature of each controllable silicon, determining the controllable silicon with the lowest current temperature as the controllable silicon to be switched, and switching to the controllable silicon to be switched to control the heating body to heat.
Specifically, in practical application, when the current temperature of the target thyristor exceeds the preset temperature, other non-working thyristors need to be switched to at this time, and the non-working thyristors control the corresponding PCT heating body to work. Specifically, the embodiment of the invention acquires the current temperature corresponding to each controllable silicon, and determines the controllable silicon with the lowest current temperature as the controllable silicon to be switched by comparing the current temperatures of the controllable silicon, thereby realizing the heating control of the controllable silicon on the heating body, further prolonging the working time of the controllable silicon due to the selection of the controllable silicon with the lowest current temperature, and ensuring the stable operation of the heating equipment.
Specifically, in an embodiment, before the step S101 is executed to monitor the current temperature of the target thyristor for controlling the heating body to heat, the method specifically includes the following steps:
step S501: and acquiring the current temperature corresponding to each controllable silicon.
Step S502: and comparing the current temperature of each controllable silicon, and determining the controllable silicon with the lowest current temperature as the target controllable silicon.
Step S503: and heating and controlling the heating body based on the target silicon controlled rectifier.
Specifically, in practical applications, the process of determining the target thyristor is similar to the process of switching to the step S103 to control the heating body to heat by using another thyristor connected to the heating body, and details are not repeated here.
Specifically, in an embodiment, the control method of the heating device in the embodiment of the present invention is to perform heating control on the heating body by adjusting a duty ratio of a first thyristor, where the first thyristor is a thyristor that performs heating control on the heating body at present. The specific process of adjusting the duty ratio ZLSQ20228480 of the first thyristor can refer to the related description in the prior art, and is not described herein again.
The following describes in detail a control method for heating equipment according to an embodiment of the present invention with reference to a specific application example.
The frequency conversion control of the heating element is a better way to reduce energy consumption, but the silicon controlled rectifier is adopted to control the PTC heating element, and the problem of continuous temperature rise is inevitable under the condition that the silicon controlled rectifier continuously works because of larger circulating current. Because the controllable silicon is low in price, the embodiment of the invention adopts the mode of alternating working of the controllable silicon, thereby not only solving the high temperature problem of the controllable silicon under the condition of continuously passing larger current, but also greatly reducing the development cost.
Taking a heating device based on double thyristors as an example, and referring to fig. 1 to 5, assuming that the operating temperature of the thyristors cannot exceed T, the specific control process is as follows:
when the heating device starts to work, the default silicon controlled rectifier A is switched on, and the duty ratio of the default silicon controlled rectifier A is controlled to achieve the required heating power; when the controlled silicon A continuously passes through a large current for a certain time, the temperature of the controlled silicon A reaches the maximum temperature T, the controlled silicon A is turned off, and the controlled silicon B is turned on; the silicon controlled rectifier B is switched on, and the required heating power is achieved by controlling the duty ratio of the silicon controlled rectifier B; when the controlled silicon B continuously passes through a large current for a certain time, the temperature of the controlled silicon B reaches the maximum temperature T, the controlled silicon B is turned off, and the controlled silicon A is turned on; the circulation and alternate work are realized, and finally the frequency conversion heating control of the heating equipment is realized.
According to the embodiment of the invention, the mode of alternately controlling the PTC heating element by the silicon controlled rectifier is adopted, so that the silicon controlled rectifier is not required to be additionally provided with the radiating fins and is placed in the air duct, the space and the cost are prevented from being greatly increased, and finally, the frequency conversion control of the heating element is realized by the mode of alternately controlling two or more silicon controlled rectifiers, so that the energy-saving performance is better.
ZLSQ20228480
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by a computer program, and the implemented program can be stored in a computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. The storage medium may be a magnetic Disk, an optical Disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a Flash Memory (Flash Memory), a Hard Disk (Hard Disk Drive, abbreviated as HDD), a Solid State Drive (SSD), or the like; the storage medium may also comprise a combination of memories of the kind described above.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A control method of heating equipment is characterized in that the heating equipment comprises a heating body and a plurality of controllable silicon used for heating control of the heating body, and each controllable silicon is connected with the heating body, and the method comprises the following steps:
monitoring the current temperature of a target controlled silicon for controlling the heating body to heat;
judging whether the current temperature of the target silicon controlled rectifier exceeds a preset temperature or not;
when the current temperature of the target silicon controlled rectifier exceeds the preset temperature, switching to another silicon controlled rectifier connected with the heating body to control the heating body to heat, wherein the current temperature of the other silicon controlled rectifier is lower than the preset temperature.
2. The method of claim 1, further comprising:
when the current temperature of the target silicon controlled rectifier does not exceed the preset temperature, acquiring the working time of the target silicon controlled rectifier;
judging whether the working time of the target silicon controlled rectifier exceeds a preset time threshold value or not;
and when the working time does not exceed the preset time threshold, heating the heating body by adopting the target silicon controlled rectifier.
3. The method of claim 2, further comprising:
when the working time exceeds the preset time threshold, switching to another silicon controlled rectifier connected with the heating body to control the heating body to heat, wherein the current temperature of the other silicon controlled rectifier is lower than the preset temperature.
4. The method according to claim 1, wherein the switching to another thyristor connected to the heating body controls the heating body to heat, comprising:
acquiring the current temperature corresponding to each controllable silicon;
and comparing the current temperature of each silicon controlled rectifier, determining the silicon controlled rectifier with the lowest current temperature as the silicon controlled rectifier to be switched, and switching to the silicon controlled rectifier to be switched to control the heating body to heat.
5. The method according to claim 1, wherein before the monitoring a current temperature of a target thyristor that controls the heating body to heat, the method further comprises:
acquiring the current temperature corresponding to each controllable silicon;
comparing the current temperature of each controllable silicon, and determining the controllable silicon with the lowest current temperature as a target controllable silicon;
and heating and controlling the heating body based on the target silicon controlled rectifier.
6. The method according to any one of claims 1 to 5, wherein the duty ratio of a first thyristor is adjusted to perform heating control on the heating body, and the first thyristor is a thyristor that currently performs heating control on the heating body.
7. The utility model provides a heating equipment, its characterized in that, heating equipment includes the heating member and is used for right a plurality of silicon controlled rectifiers that heating control are carried out to the heating member, each silicon controlled rectifier all with the heating member is connected, heating equipment still includes:
a controller, the controller comprising a memory and a processor, the memory and the processor being communicatively connected to each other, the memory having stored therein computer instructions, the processor executing the computer instructions to perform the method according to any one of claims 1 to 6, the controller being adapted to control the switching of each thyristor.
8. The heating apparatus according to claim 7, further comprising: controlled switches and temperature acquisition modules which are arranged corresponding to the controllable silicon one by one, wherein,
the first end of the controlled switch is connected with the controllable silicon, the second end of the controlled switch is connected with the heating body, the control end of the controlled switch is connected with the controller, and the controller controls the heating body by controlling the on-off of the controlled switch to switch the controllable silicon correspondingly connected with the controlled switch;
the temperature acquisition module is suitable for acquiring the current temperature of the corresponding controllable silicon and sending the current temperature to the controller.
9. The heating apparatus according to claim 7, wherein the heating apparatus is a fan heater.
10. The heating plant according to claim 8, wherein the temperature collection module is a thermistor.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868585A (en) * | 2015-05-29 | 2015-08-26 | 佛山市柏克新能科技股份有限公司 | Silicon controlled rectifier switching circuit and power switching device based on silicon controlled rectifier switching circuit |
| CN205983116U (en) * | 2016-08-30 | 2017-02-22 | 科布伦茨（杭州）电气有限公司 | Silicon controlled rectifier on -off switch |
| CN211240142U (en) * | 2019-12-21 | 2020-08-11 | 罗佩 | Digital display type time setting temperature control silicon controlled rectifier power regulation automatic power-off electric heating tube |
| CN113437957A (en) * | 2021-07-14 | 2021-09-24 | 小熊电器股份有限公司 | Trigger circuit and method of silicon controlled rectifier and load control circuit |
| CN214555439U (en) * | 2021-01-21 | 2021-11-02 | 江苏捷捷微电子股份有限公司 | Device for rapidly detecting load and heat dissipation capacity of silicon controlled rectifier |
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2022
- 2022-12-06 CN CN202211556526.9A patent/CN115789751A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868585A (en) * | 2015-05-29 | 2015-08-26 | 佛山市柏克新能科技股份有限公司 | Silicon controlled rectifier switching circuit and power switching device based on silicon controlled rectifier switching circuit |
| CN205983116U (en) * | 2016-08-30 | 2017-02-22 | 科布伦茨（杭州）电气有限公司 | Silicon controlled rectifier on -off switch |
| CN211240142U (en) * | 2019-12-21 | 2020-08-11 | 罗佩 | Digital display type time setting temperature control silicon controlled rectifier power regulation automatic power-off electric heating tube |
| CN214555439U (en) * | 2021-01-21 | 2021-11-02 | 江苏捷捷微电子股份有限公司 | Device for rapidly detecting load and heat dissipation capacity of silicon controlled rectifier |
| CN113437957A (en) * | 2021-07-14 | 2021-09-24 | 小熊电器股份有限公司 | Trigger circuit and method of silicon controlled rectifier and load control circuit |
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