CN115774132A - Film laser resistance-adjusting probe card - Google Patents

Film laser resistance-adjusting probe card Download PDF

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Publication number
CN115774132A
CN115774132A CN202211594841.0A CN202211594841A CN115774132A CN 115774132 A CN115774132 A CN 115774132A CN 202211594841 A CN202211594841 A CN 202211594841A CN 115774132 A CN115774132 A CN 115774132A
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China
Prior art keywords
probe
resistance
thin film
probe unit
unit
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CN202211594841.0A
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Chinese (zh)
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赖辉信
冯毅龙
杨俊锋
陈美媚
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Guangzhou Tianji Electronic Technology Co ltd
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Guangzhou Tianji Electronic Technology Co ltd
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Priority to CN202211594841.0A priority Critical patent/CN115774132A/en
Publication of CN115774132A publication Critical patent/CN115774132A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a resistance-adjusting probe card of a film resistor, which belongs to the field of laser resistance adjustment and comprises the following components: a PCB board and a probe; the PCB is provided with an opening for placing the probe; the probe comprises a plurality of probe groups arranged in parallel, each probe group comprises a first probe unit and a second probe unit, the first probe unit and the second probe unit are arranged oppositely, the first probe unit comprises two parallel probe heads, and the second probe unit comprises two parallel probe heads. The invention can avoid serious test traces generated in the resistance adjusting process of the thin film circuit product and improve the resistance adjusting efficiency of the product.

Description

Film laser resistance-adjusting probe card
Technical Field
The invention relates to the field of laser resistance trimming, in particular to a film laser resistance trimming probe card.
Background
The self-thin film circuit mainly comprises an attenuator, a filter, an amplifier and a resistor, wherein the resistor mainly plays the roles of power supply shunting, signal control, circuit protection and the like in the circuit and is an important classification in the thin film circuit.
The film process mainly comprises the following preparation processes: heat treatment, sputtering, electroplating, photoetching and corrosion. The sputtering film layer is thin and is a key film layer for connecting the ceramic and the functional layer, and in order to obtain good bonding force, the conventional film layer structure is as follows: taN, tiW, ni and Au, wherein the TaN is used as a bottom layer resistance material, and the Au is used as a surface electrode material. The square resistance range of the resistor is usually 10 omega/□ to 300 omega/□, commonly 25 omega/□, 50 omega/□ and 100 omega/□, and the structure is generally in series connection and also in parallel connection in the attenuator. The thin film circuit belongs to a component of a hybrid integrated circuit (hichbrid integrated circuit), the substrate is usually made of materials with low dielectric constant and high thermal conductivity such as aluminum oxide, aluminum nitride and beryllium oxide, and the thickness of the substrate is generally: 0.1mm to 1.0mm. The structure of a conventional sputtering film layer is as follows: titanium tungsten, nickel and gold, and the thickness of the film layer is about 0.5um; the electric coating layer is: soft gold, the thickness of the film layer is about 4um. The resistance film layer is usually a multi-valence mixture, the main components are tantalum nitride compounds with the valence of +3 and +5, the thickness of the resistance film layer with the sheet resistance of 50 omega/□ tested by a standard polished silicon wafer is used as the result, the film layer thickness is only about 50nm, the laser resistance trimming process is a special correction process aiming at the film layer, the process is widely used in thick film circuits, such as CN201922286617.5, CN201610722837.6, CN202020098826.7 and the like, but the application in the thin film circuit is still in a starting stage.
The laser resistance regulation of the thin film circuit requires uniform and symmetrical electrode test traces, slight scratch, stable test result and the like. The component of the apparatus that is in direct contact with the product is a probe, the components of which include: PCB board, epoxy resin solidification glue, electrode metal test needle etc.. The commonly used probe materials of the electrode comprise tungsten, rhenium tungsten, beryllium copper, silver tungsten and the like, and the hardness is as follows: rhenium tungsten, silver tungsten, tungsten and beryllium copper, and the surface of the thin film circuit is generally plated with soft gold, so that the material of the probe with the softest contact resistance is required to be selected. Through a plurality of experimental tests, beryllium copper is the most suitable material, and rhenium tungsten with higher hardness is generally selected for thick film products. The design and fabrication of the probe and the selection of parameters can have a significant impact on the appearance and performance of the product. Resistance adjustment and laser resistance adjustment are difficult, and test electrode marks exist, and the problems of alignment precision and test marks are mainly involved.
Disclosure of Invention
The invention aims to provide a film laser resistance-adjusting probe card which can avoid serious test traces generated in the resistance adjusting process of a film circuit product and improve the resistance adjusting efficiency of the product.
In order to achieve the purpose, the invention provides the following scheme:
a thin film resistor trimming probe card comprising: a PCB and a probe;
the PCB is provided with an opening for placing the probe;
the probe comprises a plurality of probe groups arranged in parallel, each probe group comprises a first probe unit and a second probe unit, the first probe unit and the second probe unit are arranged oppositely, the first probe unit comprises two parallel probe heads, and the second probe unit comprises two parallel probe heads.
Optionally, the distance between the first probe unit and the second probe unit is 700um.
Optionally, the distance between the two probe heads in each probe unit is 120um.
Optionally, the distance between the probe sets is 1180um.
Optionally, the probe head is made of beryllium copper.
Optionally, the probes comprise 12 sets of probes arranged side by side.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a film laser resistance-adjusting probe, which can avoid serious test traces generated in the resistance-adjusting process of a film circuit product and improve the resistance-adjusting efficiency of the product through laser resistance adjustment and a specific clamp.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic diagram of a specification sample of a thin film resistor according to the present invention;
FIG. 2 is a schematic diagram of a thin film laser trimming probe card according to the present invention;
FIG. 3 is a schematic diagram of the front side of a thin film laser resistance-tuning probe card according to the present invention;
FIG. 4 is a schematic diagram of the back side of a film laser resistance-modulated probe card according to the present invention;
FIG. 5 is a first partially enlarged schematic view of a thin film laser resistance trimming probe card according to the present invention;
fig. 6 is an enlarged view of a second portion of the thin film laser resistance trimming probe card according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a film laser resistance-adjusting probe card which can avoid serious test traces generated in the resistance adjusting process of a film circuit product and improve the resistance adjusting efficiency of the product.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The invention provides a thin film resistor resistance-adjusting probe card, which comprises: a PCB board and a probe; an opening is formed in the middle of the PCB and used for placing the probe;
the probes comprise 12 probe groups arranged in parallel, each probe group comprises a first probe unit and a second probe unit, the first probe unit and the second probe unit are arranged oppositely, the first probe unit comprises two parallel probe heads, and the second probe unit comprises two parallel probe heads.
Wherein, the distance between first probe unit and the second probe unit is 700um. The distance between the two probe heads in each probe unit is 120um. The distance between the probe sets was 1180um.
Specifically, the probe head is made of beryllium copper.
When the film resistor resistance-adjusting probe card provided by the invention is used, each probe unit is correspondingly connected with one electrode.
The method for regulating and controlling the resistance value of the tantalum nitride film resistor comprises the following steps:
the first step is as follows: a thin film resistor specification sample was made, as shown in fig. 1, comprising two electrodes and a resistor (two samples are included in fig. 1);
the second step is that: the thin film resistor resistance-adjusting probe card provided by the invention is manufactured, wherein four probe heads are a group, 12 products can be tested at one time, and the total number of the probe heads is 48, as shown in fig. 2; specifically, the material of the probe is beryllium copper;
the third step: a resistance-adjusting probe capable of testing 12 products simultaneously can be obtained through the second step, the resistance-adjusting probe comprises a PCB, a probe and a test connector (a left gold finger part in the figure 3 is used for connecting a probe card and equipment), and as shown in the figures 3-6, the resistance-adjusting probe is finally installed on a machine for testing;
the fourth step: starting to carry out laser resistance adjustment on the product;
the fifth step: the measurement calibration was performed on the tantalum nitride thin film resistor. Specifically, calibration was performed using manual resistance tester test data and equipment test data.
Example 1
A mass production standard resistor with the external dimension of 2.75 x 1.0 x 0.254mm, a base material of aluminum oxide and the initial average resistance value of 25.47 omega is used for preparing a probe according to the method, and the test result after laser resistance adjustment is carried out on a product on a 3-inch substrate shows that 1000 final finished products are tested, the result shows that the average value of the resistance value is 50.21 omega, the time is about 5min, the appearance of the resistor and the electrode meets the requirements, the width trace of the resistor test is less than 40um, the length is less than 100um, and the tolerance of the resistance value of the resistor is less than 1 +/-percent.
Example 2
A mass production standard resistor with the external dimension of 2.75 x 1.0 x 0.254mm, a base material of alumina and an initial average resistance value of 30.95 omega is used for preparing a probe according to the method, and the test result after laser resistance adjustment is carried out on a product on a 3-inch substrate shows that 1000 final finished products are tested, the result shows that the average value of the resistance value is 49.96 omega, the time is about 5min, the appearance of the resistor and the electrode meets the requirements, the width trace of the resistor test is less than 40um, the length is less than 100um, and the tolerance of the resistance value of the resistor is less than 1 +/-percent.
Example 3
A mass production standard resistor with the external dimension of 2.75 x 1.0 x 0.254mm, a base material of alumina and a resistor with the initial average resistance value of 36.48 omega is manufactured according to the method, and a test result shows that after a product on a 3-inch substrate is subjected to laser resistance adjustment, 1000 final finished products are tested, the result shows that the average value of the resistance value is 50.37 omega, the time is about 5min, the appearance of the resistor and the electrode meets the requirements, the width trace of the resistor test is less than 40um, the length is less than 100um, and the tolerance of the resistance value is less than 1 +/-percent.
Example 4
A mass production standard resistor with the external dimension of 2.75 x 1.0 x 0.254mm, a base material of alumina and a resistor with the initial average resistance value of 40.84 omega are manufactured according to the method, a test result shows that after the product on a 3-inch substrate is subjected to laser resistance adjustment, 1000 final finished products are tested, the result shows that the average value of the resistance value is 50.42 omega, the time is about 5min, the appearance of the resistor and the electrode meets the requirements, the width trace of the resistor test is less than 40um, the length is less than 100um, and the tolerance of the resistance value is less than 1 +/-percent
Example 5
A mass production standard resistor with the external dimension of 2.75 x 1.0 x 0.254mm, a base material of alumina and an initial average resistance value of 43.68 omega is used for preparing a probe according to the method, and the test result after laser resistance adjustment is carried out on a product on a 3-inch substrate shows that 1000 final finished products are tested, the result shows that the average value of the resistance value is 50.73 omega, the time is about 5min, the appearance of the resistor and the electrode meets the requirement, the width trace of the resistor test is less than 40um, the length is less than 100um, and the tolerance of the resistance value is less than 1 +/-percent.
The invention also discloses the following technical effects:
the existing film resistance probe only has one group of probe heads, and the probe of the invention has 12 groups of probe heads, which can greatly improve the resistance adjusting efficiency, the time of the original probe is about 60min, and the time of the new probe is about 5min.
The conventional probe is made of tungsten steel, and has serious scratch to soft gold on the surface of the film after resistance adjustment.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims (6)

1. A thin film resistor trimming probe card, comprising: a PCB board and a probe;
the PCB is provided with an opening for placing the probe;
the probe comprises a plurality of probe groups arranged in parallel, each probe group comprises a first probe unit and a second probe unit, the first probe unit and the second probe unit are arranged oppositely, the first probe unit comprises two parallel probe heads, and the second probe unit comprises two parallel probe heads.
2. The thin film resistor trimming probe card of claim 1, wherein a distance between the first probe unit and the second probe unit is 700um.
3. The thin film resistor trimming probe card of claim 1, wherein the distance between the two probe heads in each probe unit is 120um.
4. The thin film resistor trimming probe card of claim 1, wherein the distance between the probe sets is 1180um.
5. The thin film resistor trimming probe card of claim 1, wherein the probe head is comprised of beryllium copper.
6. The thin film resistor resistance trimming probe card of claim 1, wherein the probes comprise 12 probe sets arranged in parallel.
CN202211594841.0A 2022-12-13 2022-12-13 Film laser resistance-adjusting probe card Pending CN115774132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211594841.0A CN115774132A (en) 2022-12-13 2022-12-13 Film laser resistance-adjusting probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211594841.0A CN115774132A (en) 2022-12-13 2022-12-13 Film laser resistance-adjusting probe card

Publications (1)

Publication Number Publication Date
CN115774132A true CN115774132A (en) 2023-03-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211594841.0A Pending CN115774132A (en) 2022-12-13 2022-12-13 Film laser resistance-adjusting probe card

Country Status (1)

Country Link
CN (1) CN115774132A (en)

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