CN115762112A - High-speed infrared transceiver circuit - Google Patents
High-speed infrared transceiver circuit Download PDFInfo
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- CN115762112A CN115762112A CN202211081142.6A CN202211081142A CN115762112A CN 115762112 A CN115762112 A CN 115762112A CN 202211081142 A CN202211081142 A CN 202211081142A CN 115762112 A CN115762112 A CN 115762112A
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Abstract
The invention discloses a high-speed infrared transceiver circuit, wherein the high-speed infrared transceiver circuit comprises: the controller comprises a single chip microcomputer serial port, an infrared transmitting circuit and an infrared receiving circuit; a signal receiving end of the serial port of the controller single chip microcomputer is connected with the infrared receiving circuit, and a signal sending end of the serial port of the controller single chip microcomputer is connected with the infrared transmitting circuit; the infrared receiving circuit comprises a signal amplifying circuit; the signal amplification circuit is used for receiving an infrared signal of an external infrared probe, correspondingly changing the amplification gain of the circuit according to the infrared signal and outputting an electric signal adaptive to the infrared probe. The invention can effectively solve the problems that the existing infrared communication circuit can not meet higher and stable communication speed and can not be self-adapted to infrared probes with different luminous intensities.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a high-speed infrared transceiving circuit.
Background
At present, most of the existing infrared communication circuits can only stably communicate at low speed, such as below 19200bps, and only a specific infrared transceiving probe is supported after parameter matching. Patent document with application number CN201922263841.2 discloses a smart meter and a near-infrared communication circuit thereof, which can improve the infrared baud rate to 115200bps, when the self-adaptive capacity of the scheme is not strong, only a probe with fixed infrared emission light intensity is supported, the self-adaptive capacity of the probe can not be adapted to the light-emitting probe with the intensity in the IEC full range, and the sensitivity of the infrared probe with different light-emitting intensities is not high, according to the IEC 62056-21 international communication protocol, the lowest value of the radiation receiving range of the power meter is 500uW, the highest value is 5000uW, and the highest value is 10 times of the lowest value. Therefore, it is desirable to provide a high-speed ir transceiver circuit, which can adapt to ir probes with different light intensities, meet the requirements of IEC 62056-21 communication protocol, and meet a higher and stable communication rate.
Disclosure of Invention
The invention mainly aims to provide a high-speed infrared transceiver circuit, which aims to solve the problems that the existing infrared communication circuit cannot meet higher and stable communication speed and cannot be adaptive to infrared probes with different luminous intensities.
In order to achieve the above object, the present invention provides a high-speed infrared transceiver circuit, wherein the high-speed infrared transceiver circuit comprises: the controller comprises a single chip microcomputer serial port, an infrared transmitting circuit and an infrared receiving circuit; a signal receiving end of the serial port of the controller single chip microcomputer is connected with the infrared receiving circuit, and a signal sending end of the serial port of the controller single chip microcomputer is connected with the infrared transmitting circuit; the infrared receiving circuit comprises a signal amplifying circuit; the signal amplification circuit is used for receiving infrared signals of an external infrared probe, correspondingly changing the amplification gain of the circuit according to the infrared signals and outputting electric signals adaptive to the infrared probe.
In one preferred embodiment, the infrared receiving circuit includes a signal amplifying circuit; the signal amplification circuit comprises an operational amplifier U1, an infrared receiving photosensitive diode IRR1, a resistor R3, a resistor R6, a resistor R8 and an amplitude limiting voltage stabilizing circuit; the pin 1 of the operational amplifier U1 is connected with the amplitude limiting voltage stabilizing circuit and the pin 2 of the infrared receiving photosensitive diode IRR1 respectively; a pin 2 of the operational amplifier U1 is connected with one end of a resistor R8; the pin 3 of the operational amplifier U1 is connected with a power supply; a pin 5 of the operational amplifier U1 is connected with the amplitude limiting voltage stabilizing circuit; one end of the resistor R8 is connected with one end of the resistor R6, the other end of the resistor R6 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with a power supply; the other end of the resistor R8 is connected with a pin 1 of the infrared receiving photosensitive diode IRR1, and a pin 4 of the operational amplifier U1 is grounded with the other end of the resistor R8.
In one preferred embodiment, the infrared receiving circuit includes a comparison circuit; the comparison circuit comprises a comparator U2, a resistor R3, a resistor R6 and a resistor R8; pin 1 of comparator U2 with pin 5 of comparator U1 is connected, pin 2 of comparator U2 respectively with resistance R3 and resistance R6's one end are connected, pin 3 of comparator U2 connects the power, pin 4 of comparator U2 ground connection, pin 5 of comparator U2 connects the signal receiving terminal of controller singlechip serial ports.
In one preferred scheme, the infrared emission circuit comprises a triode Q2, a resistor R5 and an infrared emission diode DDT1; the base electrode of the triode Q2 is connected with one end of a resistor R5, and the other end of the resistor R5 is connected with a signal sending end of a serial port of the controller singlechip; the emitting electrode of the triode Q2 is connected with a power supply; and the collector electrode of the triode Q2 is connected with one end of the infrared emitting diode DDT1, and the other end of the infrared emitting diode DDT1 is grounded.
In one preferred scheme, the amplitude limiting voltage stabilizing circuit comprises a triode Q1 and a resistor R1; the base electrode of the triode Q1 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with the 2 pins of the infrared receiving photosensitive diode IRR1, the collector electrode of the triode Q1 is respectively connected with the 5 pins of the operational amplifier U1 and the base electrode of the triode Q1, and the emitter electrode of the triode Q1 is connected with the 1 pin of the operational amplifier U1.
In one preferred embodiment, the infrared receiving photodiode IRR1 and the resistor R1 together form a gain variation G; the relational expression of the gain variation G, the infrared receiving photosensitive diode IRR1 and the resistor R1 is as follows:
G＝R1/R IRR1
wherein R1 is the resistance of the resistor R1, R IRR1 Is formed by an infrared receiving photosensitive diode IRR1 after being irradiated by infrared lightThe resistance is now.
In one preferred embodiment, the electrical signal V at the output terminal of the signal amplification circuit out Comprises the following steps:
V out ＝V ref *(1+G)
wherein, V ref Is the reference level of the signal amplification circuit.
In one preferred embodiment, the reference level V ref Comprises the following steps:
V ref ＝Vcc*R8/(R3+R6+R8)
wherein the Vcc is a supply voltage.
In one preferable scheme, a reference voltage V1 is arranged in the comparison circuit;
when the reference voltage V1 is greater than the electrical signal V out When the voltage is higher than the set voltage, the output end of the comparison circuit outputs a high level;
when the reference voltage V1 is smaller than the electric signal V out And when the voltage is lower than the threshold voltage, the output end of the comparison circuit outputs a low level.
In one preferable embodiment, the reference voltage V1 is:
V1＝Vcc*(R6+R8)/(R3+R6+R8)。
in the technical scheme of the invention, the high-speed infrared receiving and transmitting circuit comprises a controller singlechip serial port, an infrared transmitting circuit and an infrared receiving circuit; and a signal receiving end of the serial port of the controller single chip microcomputer is connected with the infrared receiving circuit, and a signal sending end of the serial port of the controller single chip microcomputer is connected with the infrared transmitting circuit. The invention solves the problems that the existing infrared communication circuit can not meet the requirements of higher and stable communication speed and can not be self-adapted to infrared probes with different luminous intensities.
In the invention, the amplitude limiting and voltage stabilizing circuit is arranged in the infrared receiving circuit to carry out amplitude limiting and voltage stabilizing, thereby effectively preventing output overvoltage, improving the oscillation time caused by the setting time parameter of the operational amplifier U1, reducing the unstable time of output, reducing the parameter requirement on the operational amplifier U1, and keeping high communication speed which can reach the stable communication speed of 115200bps at most.
In the invention, a double-operational-amplifier mode is used, the amplification gain G of the whole circuit is changed to realize the amplification of the infrared signal through the change of the resistance value of the infrared receiving photosensitive diode after illumination, wherein the amplification gain G can be changed according to the luminous intensity of the infrared probe, the sensitivity is very high, the amplification effect on weak signals is good, the higher the emission light intensity is, the higher the gain is, the higher the self-adaption to the high and low baud rates can be realized, the self-adaption to the infrared probes with different luminous intensities can be realized, and the requirements of IEC 62056-21 international communication protocols are completely met.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic diagram of a high-speed infrared transceiver circuit according to an embodiment of the present invention.
The implementation, functional features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive efforts based on the embodiments of the present invention, are within the scope of protection of the present invention.
Moreover, the technical solutions in the embodiments of the present invention may be combined with each other, but it is necessary to be able to be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent, and is not within the protection scope of the present invention.
Referring to fig. 1, according to an aspect of the present invention, the present invention provides a high-speed infrared transceiver circuit, wherein the high-speed infrared transceiver circuit includes: the controller comprises a single chip microcomputer serial port, an infrared transmitting circuit and an infrared receiving circuit; a signal receiving end of the serial port of the controller single chip microcomputer is connected with the infrared receiving circuit, and a signal sending end of the serial port of the controller single chip microcomputer is connected with the infrared transmitting circuit; the infrared receiving circuit comprises a signal amplifying circuit; the signal amplification circuit is used for receiving an infrared signal of an external infrared probe, correspondingly changing the amplification gain of the circuit according to the infrared signal and outputting an electric signal adaptive to the infrared probe.
Specifically, in the present embodiment, the infrared receiving circuit includes a signal amplifying circuit; the signal amplification circuit comprises an operational amplifier U1, an infrared receiving photosensitive diode IRR1, a resistor R3, a resistor R6, a resistor R8 and an amplitude limiting voltage stabilizing circuit; the pin 1 of the operational amplifier U1 is connected with the amplitude limiting voltage stabilizing circuit and the pin 2 of the infrared receiving photosensitive diode IRR1 respectively; a pin 2 of the operational amplifier U1 is connected with one end of a resistor R8; the pin 3 of the operational amplifier U1 is connected with a power supply; the pin 5 of the operational amplifier U1 is connected with the amplitude limiting voltage stabilizing circuit; one end of the resistor R8 is connected with one end of the resistor R6, the other end of the resistor R6 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with a power supply; the other end of the resistor R8 is connected with a pin 1 of an infrared receiving photosensitive diode IRR1, and a pin 4 of the operational amplifier U1 is grounded with the other end of the resistor R8; the signal amplification circuit can change the resistance value after infrared light intensity emission is carried out on an infrared probe through the infrared receiving photosensitive diode IRR1, so that the amplification gain G of the whole circuit is changed to amplify the infrared signal, the amplification gain G can be changed according to the light intensity of the infrared probe, the higher the sensitivity is, the better the amplification effect is on weak signals, the higher the emission light intensity of the infrared probe is, the higher the gain is, the self-adaption can be carried out on various high and low baud rates, and the self-adaption can meet the infrared probes with different light intensities.
Specifically, in this embodiment, the limiting voltage stabilizing circuit includes a transistor Q1 and a resistor R1;
the base electrode of the triode Q1 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with 2 pins of the infrared receiving photosensitive diode IRR1, the collector electrode of the triode Q1 is respectively connected with 5 pins of the operational amplifier U1 and the base electrode of the triode Q1, and the emitter electrode of the triode Q1 is connected with 1 pin of the operational amplifier U1.
Specifically, in this embodiment, the infrared receiving photodiode IRR1 and the resistor R1 together form a gain variation G; the relational expression of the gain variation G, the infrared receiving photosensitive diode IRR1 and the resistor R1 is as follows:
G＝R1/R IRR1
wherein R1 is the resistance of the resistor R1, R IRR1 Is the resistance value of the infrared receiving photosensitive diode IRR1 after being irradiated by infrared light.
The electric signal V at the output end of the signal amplification circuit out Comprises the following steps:
V out ＝V ref *(1+G)
wherein, V ref Is a reference level of the signal amplifying circuit;
the reference level V ref Comprises the following steps:
V ref ＝Vcc*R8/(R3+R6+R8)
wherein the Vcc is a supply voltage;
specifically, in this embodiment, the amplitude limiting and voltage stabilizing circuit is connected to the inverting terminal of the operational amplifier U1, that is, the amplitude limiting and voltage stabilizing circuit is connected to pin 1 of the operational amplifier U1, the non-inverting terminal of the operational amplifier U1 is connected to the power supply terminal Vcc through the resistor R6 and the resistor R3, that is, pin 2 of the operational amplifier U1 is connected to the power supply terminal Vcc through the resistor R6 and the resistor R3; resistance R1 with infrared receiving photosensitive diode IRR1 constitutes gain variation G jointly, when infrared probe carries out infrared light intensity transmission, through infrared probe's light signal turns into the signal of telecommunication, infrared receiving photosensitive diode IRR1 is right infrared probe responds, infrared receiving photosensitive diode R IRR1 The resistance value of the infrared receiving photosensitive diode IRR1 changes after the infrared receiving photosensitive diode IRR1 is irradiated by infrared light, and the gain variation G of the amplifying circuit changes along with the resistance value, wherein the gain variation G and the R of the infrared receiving photosensitive diode IRR1 IRR1 The relationship is as follows: g = R1/R IRR1 The operational amplifier U1 performs operational processing on the input electrical signal and outputs an electrical signal V at its output terminal out And outputting the electric signal to a comparison circuit for processing, wherein the output end of the 5-pin of the operational amplifier U1 is the output end of the signal amplification circuit.
Specifically, in this embodiment, the triode Q1 is an NPN-type triode, and the voltage stabilization and amplitude limiting of the circuit is realized by the NPN-type triode, so as to prevent output overvoltage, effectively improve oscillation time caused by the setting time parameter of the operational amplifier U1, reduce unstable time of output, improve communication speed, and reduce the parameter requirement on the operational amplifier U1, so that the infrared receiving circuit can maintain a high communication speed, which can reach a stable communication speed of 115200bps at most.
Specifically, in the present embodiment, the infrared receiving circuit includes a comparison circuit; the comparison circuit comprises a comparator U2, a resistor R3, a resistor R4, a resistor R6 and a resistor R8; pin 1 of comparator U2 with pin 5 of comparator U1 is connected, pin 2 of comparator U2 respectively with resistance R3 and resistance R6's one end are connected, pin 3 of comparator U2 connects the power, pin 4 of comparator U2 ground connection, pin 5 of comparator U2 is connected with resistance R4's one end, pin 5 of comparator U2 with pin 5 of comparator U2 connects the signal receiving terminal of controller singlechip serial ports, the other end of resistance R4 with pin 3 of comparator U2 is connected.
Specifically, in the present embodiment, a reference voltage V1 is provided in the comparison circuit; the inverting terminal of the comparator U2 is connected to the output terminal of the operational amplifier U1, that is, the pin 1 of the comparator U2 is connected to the pin 5 of the operational amplifier U1, and the comparator U2 receives the electrical signal V output by the operational amplifier U1 out And applying the electrical signal V out And the above-mentionedComparing the reference voltage V1 of the comparison circuit, shaping the signal, and when the reference voltage V1 is greater than the electric signal V out When the reference voltage V1= Vcc (R6 + R8)/(R3 + R6+ R8) is greater than the electrical signal V, the pin IR _ RXD of the output terminal of the comparison circuit outputs a high level out When the voltage is higher than the set voltage, the output end IR _ RXD pin of the comparison circuit outputs a high level; when the reference voltage V1 is less than the electrical signal V out When the reference voltage V1= Vcc (R6 + R8)/(R3 + R6+ R8) is less than the electrical signal V, the output terminal IR _ RXD pin of the comparison circuit outputs a low level out And when the voltage is low, the output end IR _ RXD pin of the comparison circuit outputs low level.
Specifically, in this embodiment, the infrared emission circuit includes a transistor Q2, a resistor R5, a resistor R7, and an infrared emission diode DDT1; the base electrode of the triode Q2 is respectively connected with one end of a resistor R2 and one end of a resistor R5; the other end of the resistor R2 is connected with a power supply, and the other end of the resistor R5 is connected with a signal sending end IR _ TXD of a serial port of the controller singlechip; the emitting electrode of the triode Q2 is connected with a power supply; the collecting electrode of triode Q2 with resistance R7's one end is connected, resistance R7's the other end with infrared emitting diode DDT 1's one end is connected, infrared emitting diode DDT 1's the other end ground connection.
Specifically, in this embodiment, the triode Q2 is a PNP type triode, one end of the resistor R5 is connected to a signal sending end IR _ TXD of a serial port of the controller single chip, and the controller single chip sends an electric signal with different baud rates through the serial port IR _ TXD to drive the triode Q2 to turn on and off the triode Q2 with different baud rates, so that the infrared transmitting tube DDT1 converts the electric signal sent by the serial port IR _ TXD of the controller single chip into an optical signal to be received by the infrared probe, wherein the resistor R5 in the infrared transmitting circuit is a base current limiting resistor of the triode Q2 to limit the magnitude of the current of the branch, so as to prevent the serial components from being burned out due to excessive current and play a role in voltage division; the resistor R2 is used for ensuring the stable state of the infrared emission circuit when the infrared emission circuit does not work, and the resistor R7 is a current-limiting resistor of the infrared emission diode DDT1 and used for ensuring that the infrared emission diode DDT1 cannot be damaged due to overcurrent.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A high-speed infrared transceiver circuit, comprising: the controller comprises a single chip microcomputer serial port, an infrared transmitting circuit and an infrared receiving circuit; a signal receiving end of the serial port of the controller single chip microcomputer is connected with the infrared receiving circuit, and a signal sending end of the serial port of the controller single chip microcomputer is connected with the infrared transmitting circuit; the infrared receiving circuit comprises a signal amplifying circuit; the signal amplification circuit is used for receiving an infrared signal of an external infrared probe, correspondingly changing the amplification gain of the circuit according to the infrared signal and outputting an electric signal adaptive to the infrared probe.
2. A high-speed infrared transceiver circuit according to claim 1, wherein the infrared receiver circuit comprises a signal amplifier circuit; the signal amplification circuit comprises an operational amplifier U1, an infrared receiving photosensitive diode IRR1, a resistor R3, a resistor R6, a resistor R8 and an amplitude limiting voltage stabilizing circuit; the pin 1 of the operational amplifier U1 is connected with the amplitude limiting voltage stabilizing circuit and the pin 2 of the infrared receiving photosensitive diode IRR1 respectively; a pin 2 of the operational amplifier U1 is connected with one end of a resistor R8; the pin 3 of the operational amplifier U1 is connected with a power supply; the pin 5 of the operational amplifier U1 is connected with the amplitude limiting voltage stabilizing circuit; one end of the resistor R8 is connected with one end of the resistor R6, the other end of the resistor R6 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with a power supply; the other end of the resistor R8 is connected with a pin 1 of the infrared receiving photosensitive diode IRR1, and a pin 4 of the operational amplifier U1 is grounded with the other end of the resistor R8.
3. A high-speed infrared transceiver circuit according to claim 2, characterized in that the infrared receiver circuit comprises a comparator circuit; the comparison circuit comprises a comparator U2, a resistor R3, a resistor R6 and a resistor R8; pin 1 of comparator U2 with pin 5 of comparator U1 is connected, pin 2 of comparator U2 respectively with the one end of resistance R3 and resistance R6 is connected, pin 3 of comparator U2 connects the power, pin 4 of comparator U2 ground connection, pin 5 of comparator U2 connects the signal receiving terminal of controller singlechip serial ports.
4. A high-speed infrared transceiver circuit according to claim 3, characterized in that the infrared transmitter circuit comprises a transistor Q2, a resistor R5 and an infrared emitting diode DDT1; the base electrode of the triode Q2 is connected with one end of a resistor R5, and the other end of the resistor R5 is connected with a signal sending end of a serial port of the controller singlechip; the emitting electrode of the triode Q2 is connected with a power supply; and the collector electrode of the triode Q2 is connected with one end of the infrared emitting diode DDT1, and the other end of the infrared emitting diode DDT1 is grounded.
5. The high-speed infrared transceiver circuit of claim 2, wherein the clipping voltage regulator circuit comprises a transistor Q1 and a resistor R1; the base electrode of the triode Q1 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with 2 pins of the infrared receiving photosensitive diode IRR1, the collector electrode of the triode Q1 is respectively connected with 5 pins of the operational amplifier U1 and the base electrode of the triode Q1, and the emitter electrode of the triode Q1 is connected with 1 pin of the operational amplifier U1.
6. The high-speed infrared transceiver circuit as claimed in claim 5, wherein said infrared receiving photodiode IRR1 and said resistor R1 together form a gain variation G; the relational expression of the gain variation G, the infrared receiving photosensitive diode IRR1 and the resistor R1 is as follows:
G＝R1/R IRR1
wherein R1 is the resistance of the resistor R1, R IRR1 Is the resistance value of the infrared receiving photosensitive diode IRR1 after being irradiated by infrared light.
7. The high-speed infrared transceiver circuit as claimed in claim 6, wherein the electrical signal V at the output of the signal amplification circuit out Comprises the following steps:
V out ＝V ref *(1+G)
wherein, V ref Is the reference level of the signal amplification circuit.
8. A high-speed IR transceiver circuit as claimed in claim 7, wherein said reference level V is set to ref Comprises the following steps:
V ref ＝Vcc*R8/(R3+R6+R8)
wherein the Vcc is a supply voltage.
9. The high-speed infrared transceiver circuit as claimed in claim 7, wherein the comparator circuit is provided with a reference voltage V1;
when the reference voltage V1 is greater than the electrical signal V out When the voltage is higher than the set voltage, the output end of the comparison circuit outputs a high level;
when the reference voltage V1 is less than the electrical signal V out And when the voltage is lower than the threshold voltage, the output end of the comparison circuit outputs a low level.
10. A high-speed infrared transceiver circuit as claimed in claim 9, wherein the reference voltage V1 is:
V1＝Vcc*(R6+R8)/(R3+R6+R8)。
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211081142.6A CN115762112A (en) | 2022-09-06 | 2022-09-06 | High-speed infrared transceiver circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211081142.6A CN115762112A (en) | 2022-09-06 | 2022-09-06 | High-speed infrared transceiver circuit |
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| CN115762112A true CN115762112A (en) | 2023-03-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117498945A (en) * | 2023-12-25 | 2024-02-02 | 广东恩威视科技有限公司 | UART signal infrared receiving and transmitting circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117498945A (en) * | 2023-12-25 | 2024-02-02 | 广东恩威视科技有限公司 | UART signal infrared receiving and transmitting circuit |
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