CN115756297A - Method and system for preventing reading error and data storage device - Google Patents
Method and system for preventing reading error and data storage device Download PDFInfo
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- CN115756297A CN115756297A CN202111047038.0A CN202111047038A CN115756297A CN 115756297 A CN115756297 A CN 115756297A CN 202111047038 A CN202111047038 A CN 202111047038A CN 115756297 A CN115756297 A CN 115756297A
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Abstract
The invention discloses a method, a system and a data storage device for preventing reading errors, wherein the method for preventing reading errors comprises the following steps: recording the reading times and the erasing times of each flash memory block; when the read times of the flash memory block are equal to or greater than a first threshold value and the erase times are less than a second threshold value, delaying a read command; detecting the state of each flash memory page in the flash memory block; and when the number of the flash memory pages with inverted bits in the flash memory block is equal to or larger than a third threshold value, transferring the data in the flash memory block to other flash memory blocks. The method for preventing the reading error can prolong the service life of the data storage equipment.
Description
Technical Field
The invention belongs to the technical field of storage, and particularly relates to a method and a system for preventing reading errors and a data storage device.
Background
A Solid State Disk (SSD) is a type of Solid State Disk based on a persistent memory, such as flash memory. The intelligent control system has the advantages of high reading and writing speed, low power consumption, no noise, vibration resistance, low heat, small volume and large working range, and is widely applied to the fields of military affairs, vehicle-mounted, industrial control, video monitoring, network terminals, electric power, medical treatment, aviation and the like, navigation equipment and the like. When data of a certain page in the flash memory block is frequently and repeatedly read, the data in the flash memory block is greatly influenced by the frequently read flash memory page, and when the data in the flash memory page is read again, a reading error is easy to occur. At present, when the device is idle, the device can be checked whether a flash memory block with a reading error is easy to occur, and when the device is frequently used, the reading error cannot be prevented.
Disclosure of Invention
The invention aims to provide a method, a system and a data storage device for preventing reading errors, which can dynamically check the state of a flash memory block in the data storage device, prevent continuous instructions from reading a certain flash memory block and prolong the service life of the flash memory block.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a method for preventing reading errors, which at least comprises the following steps:
recording the reading times and the erasing times of each flash memory block;
when the read times of the flash memory block are equal to or greater than a first threshold value and the erase times are less than a second threshold value, delaying a read command;
detecting the state of each flash memory page in the flash memory block; and
and when the number of the flash memory pages with inverted bits in the flash memory block is equal to or larger than a third threshold value, transferring the data in the flash memory block to other flash memory blocks.
In an embodiment of the present invention, when the read number of times of the flash memory block is less than a first threshold, or the erase number of times is equal to or greater than a second threshold, a read command is executed.
In an embodiment of the present invention, after the status check of each flash page in the flash memory block is completed, the number of reads of the flash memory block is reset.
In an embodiment of the present invention, the status of each flash page in the flash memory block is detected while recording the extended time of the read command.
In an embodiment of the invention, when the extended time of the read command is equal to or greater than a fourth threshold, the detection of the flash memory block is suspended, and the read command is executed.
In an embodiment of the present invention, when detecting the status of each flash page in the flash memory block, the flash memory pages in the flash memory block that have been detected are marked.
In an embodiment of the present invention, each time one of the flash pages in the flash block is checked, the number of times of reading the flash block is increased by 1.
In an embodiment of the present invention, a record table is provided, the low-order stores the number of valid data in the flash memory block, and the high-order stores the read times of the flash memory block.
The present invention also provides a system for preventing a read error, comprising:
the information recording unit is used for recording the reading times and the erasing times of each flash memory block;
the monitoring unit is used for judging whether the reading times of the flash memory block reach a first threshold value or not and whether the erasing times reach a second threshold value or not;
a read command holding unit for holding the delayed read command; and
and the detection unit is used for detecting the reading times of each flash memory page in the flash memory block, and when the reading times of the flash memory pages are equal to or larger than a third threshold value, the data in the flash memory pages are moved to other flash memory blocks.
The present invention also provides a data storage device having a computer program stored thereon, which when executed implements a method of preventing read errors as described above.
According to the method, the system and the data storage device for preventing the reading error, provided by the invention, the flash memory block is dynamically detected by setting the first threshold as the starting condition for detecting the flash memory block, and the data storage device starts to execute no matter what state the data storage device is in as long as the starting condition is met; by setting the second threshold value for the erasing times, the detection of the flash memory block is not carried out when the erasing times of the flash memory block reach the second threshold value, so that the flash memory block is prevented from being easily damaged and being incapable of being prevented; setting a fourth threshold value for the delay time of the read command to prevent the stored read command from being invalid due to expiration; the service life of the flash memory block is prolonged by moving the flash memory page to which the reading error is about to occur without carrying the complete flash memory block. The method, the system and the data storage equipment for preventing the reading error can dynamically detect whether the instruction continues to access the flash memory block, and reduce the access speed of the flash memory block when the reading times of the flash memory block are excessive so as to achieve the purposes of slowing down and destroying the flash memory block and prolonging the service life of the flash memory block.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a block diagram of a data storage device.
FIG. 2 is a diagram of potential during data reading.
FIG. 3 is a flowchart of a method for preventing read errors.
Fig. 4 is a detailed flowchart of step S16 in fig. 3.
FIG. 5 is a block diagram of a system for preventing read errors.
FIG. 6 is a schematic diagram of an information recording unit structure.
FIG. 7 is a diagram of a record table structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the data storage device 10 may be connected to a host, wherein the host may be, for example, a personal computer, a CPU core, or a server connected to a network. The host performs data access control on the data storage device 10, for example, by sending a read request to the data storage device 10 to perform a read operation on data in the data storage device 10.
Referring to fig. 1, in an embodiment of the present invention, a data storage device 10 is, for example, a Solid State Disk (SSD), which is a storage device using a semiconductor flash memory as a medium. Unlike a mechanical hard disk, the data storage device 10 stores data in a semiconductor, implemented with a purely electronic circuit, without any mechanical device. The data storage device 10 mainly includes a controller 101 and a flash memory medium, and the controller 101 is a brain of the data storage device 10 and plays a role in commanding, calculating and coordinating. Controller 101 may implement communications with a host, communications with flash media, and may also run FTL algorithms internal to data storage device 10. The flash memory medium includes a plurality of flash memory blocks 103 for storing data information, wherein the flash memory blocks 103 in the data storage device 10 are a type of non-volatile memory and data is not lost even when power is lost.
Referring to fig. 1 and fig. 6, in an embodiment of the invention, a Flash Translation Layer (FTL) 102 may be further included in the data storage device 10. When the host sends a read command to the data storage device 10, the data storage device 10 receives the command and executes it, and receives data to be read by the host. Data is generally buffered in a Random Access Memory (RAM) (not shown) inside the data storage device 10, the flash translation layer 102 allocates a flash address to each logical data block, when the data has a certain number, the flash translation layer 102 sends a read request to the back end, and the back end reads the data in the corresponding flash block 103 according to the read request. The data information in the read command sent by the host may be in any flash block 103, and the flash translation mapping unit 222 provided in the flash translation layer 102 may complete the translation or mapping from the logical data block to the flash physical space. Meanwhile, a garbage collection unit (not shown in the figure) for erasing invalid data can be further arranged in the flash conversion layer 102, the flash memory blocks 103 cannot be overwritten, when data is continuously written in, garbage data (invalid data) can be generated in the flash memory blocks 103, the garbage data can occupy the space of the flash memory blocks 103, and when the available space of the flash memory blocks 103 is insufficient, the flash conversion layer 102 needs to perform garbage collection, namely, the valid data on a plurality of flash memory blocks 103 are moved out, written into a new flash memory block 103, and then the previous flash memory blocks 103 are erased.
Referring to FIG. 1, in one embodiment of the present invention, flash memory blocks 103 have a lifetime that may cause flash memory blocks 103 to be permanently damaged when a flash memory block 103 approaches, equals, or exceeds its maximum erase count. In addition, referring to fig. 2, when reading a certain flash page 1030 in a flash block 103, the voltage of the control electrode of the flash page 1030 (field effect transistor) is pulled low, the voltage of the control electrode is, for example, 0V, and a positive voltage, for example, a positive voltage of +5V, is applied to the control electrodes of other unread flash pages in the flash block 103, so as to ensure that the unread flash pages (field effect transistors) are turned on. When the number of reads of the flash page 1030 is too large, a positive voltage is frequently applied to the control electrode of the unread flash page (field effect transistor) in the flash block 1030, which may cause electrons to be attracted to the floating gate, resulting in a flash write, and eventually a bit flip. When the flash page 1030 is subjected to the flash write, and the data information in other flash pages 1030 in the flash block 103 is read again, a read error is easily caused. The present invention provides a method for preventing read errors, which can move the flash memory pages 1030 with a large number of read times before forming a slight write, so as to avoid the occurrence of read errors.
Referring to fig. 1 and fig. 3, a data storage device 100 provided by the present invention is a computer-readable storage device, and a computer program is stored on the data storage device 100, and when the computer program is executed by a processor, the method for preventing a read error according to the present invention is implemented. The method for preventing the reading error comprises the following steps:
and S11, receiving a reading command.
And S12, recording the reading times and the erasing times of each flash memory block 103.
S13, judging whether the reading times of the flash memory block 103 is equal to or larger than a first threshold value, executing the step S14 when the reading times of the flash memory block 103 is equal to or larger than the first threshold value, and executing the step S17 when the reading times of the flash memory block 103 is smaller than the first threshold value.
S14, judging whether the erasing times of the flash memory block 103 is equal to or larger than a second threshold value, executing the step S15 when the erasing times of the flash memory block 103 is smaller than the second threshold value, and executing the step S17 when the erasing times of the flash memory block 103 is equal to or larger than the second threshold value.
And S15, delaying the reading command and recording the extension time of the reading command.
S16, detecting the state of each flash page 1030 in the flash block 103, when the number of the flash pages 1030 with bit reversal in the flash block 103 exceeds a third threshold value, transferring the data in the flash block 103 to other flash blocks 103, and resetting the reading times of the flash blocks 103.
And S17, executing the reading command.
Referring to fig. 1 and fig. 6, in an embodiment of the present invention, an information recording unit 22 is disposed in the data storage device 10, the information recording unit 22 may be disposed inside the flash memory block 103 or electrically connected to the flash memory block 103, and in this embodiment, the information recording unit 22 is disposed in the flash memory translation layer 102, for example. The information recording unit 22 includes therein, for example, a read count recording unit 221 to record the read count of the flash block 103.
Referring to fig. 1 and fig. 3, in an embodiment of the present invention, in steps S11 to S12, when a read command is received, the read times of the flash memory page 1030 and the flash memory block 103 corresponding to the read command are increased by one. When a plurality of flash memory pages 1030 in a certain flash memory block 103 are read simultaneously, the number of times of reading the flash memory block 103 is increased by one.
Referring to fig. 1 and 3, in an embodiment of the present invention, the first threshold is a condition for starting the detection of the flash memory block 103, the size of the first threshold is set according to the performance of the flash memory block 103, and when the number of reads of the flash memory block 103 exceeds the first threshold, the flash memory block 103 has a risk of a read error. In this embodiment, the range of the first threshold is, for example, 4800 to 5100 times, and specifically, for example, 5000 times. When the number of reads of the flash block 103 is equal to or greater than the first threshold, a detection may be initiated for the flash pages 1030 within the flash block 103, i.e. the status of each flash page 1030 in the flash block 103 is detected, and when the number of reads of the flash block 103 is less than the first threshold, a read command is executed.
Referring to fig. 1 and fig. 3, in an embodiment of the present invention, when the number of reads of the flash block 103 is greater than or equal to the first threshold, the method for preventing read errors further includes step S14: it is determined whether the number of times of erasing of the flash memory block 103 is equal to or greater than a second threshold value, and when the number of times of erasing of the flash memory block 103 is equal to or greater than the second threshold value, detection of the flash memory block 103 is not started, but a read command is directly executed. In this embodiment, the second threshold is the maximum number of times of erasing the flash memory block 103, and when the number of times of erasing the flash memory block 103 reaches the second threshold and the flash memory block 103 is checked and data is moved, the flash memory block 103 is easily damaged and cannot be prevented, so that the data in the flash memory block 103 is damaged, and the check may affect the overall operation of the data storage device 10.
Referring to fig. 1 and fig. 3, in an embodiment of the present invention, the second threshold is set according to a type of the flash block 103, when a memory Cell in the flash block 103 is, for example, a Single-Level Cell (SLC), that is, a Single memory Cell stores 1bit of data, and the second threshold is, for example, 50000 to 100000 times, and, for example, 80000 to 100000 times. When the memory Cell in the flash memory block 103 is, for example, a Multi-Level Cell (MLC), that is, a single memory Cell stores 2 bits of data, the second threshold is, for example, 3000 to 10000 times, and, for example, 8000 to 10000 times. When the storage units in the flash block 103 are, for example, triple-Level cells (TLC), that is, a single storage unit stores 3bits of data, the second threshold is, for example, 500 to 1000 times, and is, for example, 700 to 1000 times.
Referring to fig. 1 and fig. 3, in an embodiment of the invention, when the number of reads of the flash block 103 is equal to or greater than a first threshold and the number of erases of the flash block 103 is less than a second threshold, the flash page 1030 in the flash block 103 is detected. In this embodiment, step S15 and step S16 may be performed simultaneously, that is, when it is confirmed that the number of times of erasing the flash block 103 does not reach the second threshold, the read command is delayed, and the delay time of the read command is recorded, and simultaneously, the detection of the state of each flash page 1030 in the flash block 103 is started.
Referring to fig. 1 and fig. 3 to 4, in an embodiment of the present invention, step S16 includes: s160, checking the status of each flash page 1030 in the flash block 103. S161, determining whether the checking of the flash pages 1030 in the flash block 103 is completed, if not, executing step S160, and continuing to check the unchecked flash pages 1030, if so, executing step S162, determining whether the number of bit-flipped flash pages 1030 in the flash block 103 exceeds a third threshold, and if the number of bit-flipped flash pages 1030 in the flash block 103 is equal to or greater than the third threshold, executing step S163, and moving the data in the flash block 103 to another flash block 103, and executing step S164. When the number of bit-flipped flash pages 1030 in the flash block 103 is smaller than the third threshold, step S164 is executed to set the number of reads of the flash block 103 to zero. And in particular, the state of the flash page 1030 may be monitored by means of Low Density Parity Check (LDPC).
Referring to fig. 1 and fig. 3, in an embodiment of the present invention, the third threshold of step S161 is a condition for data transfer in the flash memory block 103. The data transfer in the flash block 103 is performed when the number of bit-forwarded flash pages 1030 in the flash block 103 exceeds a third threshold, e.g. 15, 18 or 20. In step S163, when the data information in the original flash memory block 103 is transferred to the new flash memory block 103, the flash translation mapping unit 222 updates the physical address corresponding to the logical address in the data information, modifies the physical address, and marks the original physical address as invalid.
Referring to fig. 1 and fig. 3, in an embodiment of the present invention, after the checking of the flash pages 1030 in a certain flash block 103 is completed, the number of times of reading the flash block 103 is set to zero, the number of times of reading the flash block 103 is recorded again, and steps S11 to S17 are performed.
Referring to fig. 1 and 3, in an embodiment of the present invention, step S16 is executed while step S15 is executed, that is, while checking the status of the flash pages 1030 in each flash block 103, the delay time of the read command to be executed is recorded. The method for preventing reading errors further comprises the following steps: when the delay time of the read command exceeds the fourth threshold, the detection of the flash memory page 1030 is suspended, the read command is executed, and after the read command is executed, the detection of the flash memory page 1030 is resumed again. In this embodiment, the fourth threshold is an upper limit of the read command delay time, and when the read-named delay time exceeds the fourth threshold, the read command is invalid, and the fourth threshold is, for example, 400 to 500 microseconds, and specifically, for example, 500 microseconds. Typically, the detection of the flash page 1030 in the flash block 103 may be performed when the latency of the read command is within a fourth threshold. But the occurrence of abnormal conditions is not excluded, and the setting of the fourth threshold value can ensure that the read command does not fail. In the process of detecting the flash memory page 1030, the read command for the flash memory block 103 with a large number of read times is delayed, so that the read speed of the block can be reduced, and the damage of the flash memory block 103 caused by multiple read commands can be reduced.
Referring to fig. 1 and fig. 3, in an embodiment of the invention, the method for preventing a read error may further include the following steps: when detecting the status of the flash page 1030, the flash page 1030 that has been detected to be completed is marked. In this embodiment, the flags for the flash page 1030 that has been checked are, for example: each time the check is completed by one flash page 1030, one is added to the number of reads of the flash block 103 to mark the number of flash pages 1030 that have been checked, and to record the location of the check. In the execution process, if power failure occurs or detection of the flash memory pages 1030 is suspended, the set flag can be used as a reference value for next power-on or detection of the flash memory pages 1030 again until the check is completed, and then the reading times of the flash memory blocks 103 are reset.
Referring to fig. 1 and 5, the present invention further provides a system 20 for preventing a read error, where the system 20 may include a read command receiving unit 21, an information recording unit 22, a monitoring unit 24, a read command storing unit 23, a detecting unit 26, and a read command executing unit 25. Wherein, the read command receiving unit 21 is used for receiving a read command, and the information recording unit 22 is used for recording the read times and the erase times of the flash memory block 103. The monitoring unit 24 is configured to monitor a data state in the information recording unit 22, and a first determining unit 241 and a second determining unit 242 are disposed in the monitoring unit 24, where the first determining unit 241 is configured to determine whether the read frequency of the flash memory block 103 is equal to or greater than a first threshold, and the second determining unit 242 is configured to determine whether the erase frequency of the flash memory block 103 is equal to or greater than a second threshold. The read command storage unit 23 is configured to store the read command, and a fourth determination unit 231 is disposed in the command storage unit and configured to determine whether the delay time of the read command exceeds a fourth threshold. The detecting unit 26 is configured to detect a state of each flash page 1030 in the flash memory block 103, and a third determining unit 261 and a moving unit 262 are disposed in the detecting unit 26, where the third determining unit 261 is configured to determine whether a number of flash pages with inverted bits in the flash memory block exceeds a third threshold, and the moving unit 262 is configured to move data in the flash memory block 103 with the number of flash pages with inverted bits equal to or greater than the third threshold to another flash memory block 103. The read command execution unit 25 is used to execute read commands received by the data storage device.
Referring to fig. 5 and fig. 6, in an embodiment of the present invention, the information recording unit 22 includes a read count recording unit 221, and the read count recording unit 221 records the read count of each flash block 103.
Referring to fig. 1 and fig. 6, in an embodiment of the present invention, the information recording unit 22 includes a flash memory conversion mapping unit 222, and the flash memory conversion mapping unit 222 records a physical Address corresponding to each Logical Block Address (LBA), and when a read command is received, a physical Address corresponding to the Logical Address in the command needs to be found.
Referring to fig. 1 and fig. 6, in an embodiment of the present invention, the information recording unit 22 further includes a valid page recording unit 223, the valid page recording unit 223 records the valid number of pages on each flash memory block 103, and the larger the number of valid pages in the valid page recording unit 223 is, the more data is stored in the flash memory block 103.
Referring to fig. 1 and fig. 6, in an embodiment of the present invention, the information recording unit 22 includes a valid block recording unit 224, and the valid block recording unit 224 is used for recording a status of each flash memory block 103. For example, when the flash memory block 103 is in an available state, i.e., the flash memory block 103 can store data, the valid block recording unit 224 marks the state of the flash memory block 103 as 1, which is the available flash memory block; when the flash block 103 is in the unavailable state, i.e. the flash block 103 is already full of data, the state of the flash block 103 is marked as 0 in the valid block recording unit 224. When the number of reads of the valid page 1030 exceeds the third threshold and the data information in the valid page 1030 needs to be transferred, the state flag of transferring the data information to the flash block 103 may be set to 1, and the number of valid pages in the flash block 103 is small.
Referring to fig. 1 and fig. 6, in an embodiment of the present invention, the information recording unit 22 further includes an erase count recording unit 225, and the erase count recording unit 225 is used for recording the number of times of erasing each flash memory block 103.
Referring to fig. 6 and 7, in an embodiment of the invention, a record table 30 is provided, which includes a read count recording unit 221 and a valid page recording unit 223. The size of the record table 30 is, for example, 32 bits, and the number of valid data stored in the flash memory block 103 using, for example, the lower 19bits, and the number of reading times of the flash memory block 103 using, for example, the upper 13bits are used. In the present embodiment, the number of the log tables 30 may be set according to the size of the flash blocks 103 in the data storage device 10.
The embodiments of the invention disclosed above are intended merely to aid in the explanation of the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand the invention for and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A method for preventing read errors, comprising:
recording the reading times and the erasing times of each flash memory block;
when the read times of the flash memory blocks are equal to or greater than a first threshold and the erase times are less than a second threshold, delaying a read command;
detecting the state of each flash memory page in the flash memory block; and
and when the number of the flash memory pages with inverted bits in the flash memory block is equal to or larger than a third threshold value, transferring the data in the flash memory block to other flash memory blocks.
2. A method of preventing read errors according to claim 1, wherein a read command is executed when the read count of the flash block is less than a first threshold value or the erase count is equal to or greater than a second threshold value.
3. The method of claim 1, wherein the number of reads of the flash block is reset after the status check of each flash page in the flash block is completed.
4. A method of preventing read errors as claimed in claim 1, wherein the extended time of the read command is recorded simultaneously with the detection of the status of each of the flash pages in the flash memory block.
5. The method of claim 4, wherein when the extended time of the read command is equal to or greater than a fourth threshold, the detection of the flash block is suspended and the read command is executed.
6. A method of preventing read errors as claimed in claim 1, wherein the flash memory pages in the flash memory block that have been detected to be complete are marked when the status of each of the flash memory pages in the flash memory block is detected.
7. A method for preventing read errors as claimed in claim 1, wherein the number of reads of the flash block is increased by 1 for each checked flash page in the flash block.
8. The method of claim 1, wherein a record table is provided, the lower bits of the record table storing the number of valid data in the flash memory block, and the upper bits of the record table storing the read times of the flash memory block.
9. A system for read error prevention, comprising:
the information recording unit is used for recording the reading times and the erasing times of each flash memory block;
the monitoring unit is used for judging whether the reading times of the flash memory block reach a first threshold value or not and whether the erasing times reach a second threshold value or not;
a read command holding unit for holding the delayed read command; and
and the detection unit is used for detecting the state of each flash memory page in the flash memory block, and when the number of the flash memory pages with inverted bits is equal to or larger than a third threshold value, the data in the flash memory block is transferred to other flash memory blocks.
10. A data storage device, characterized in that a computer program is stored on the data storage device, which computer program, when executed, carries out the method of read error prevention as claimed in claim 1.
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| CN202111047038.0A CN115756297A (en) | 2021-09-06 | 2021-09-06 | Method and system for preventing reading error and data storage device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116860179A (en) * | 2023-08-31 | 2023-10-10 | 合肥康芯威存储技术有限公司 | Storage device, data processing method for storage device, computer apparatus, and medium |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116860179A (en) * | 2023-08-31 | 2023-10-10 | 合肥康芯威存储技术有限公司 | Storage device, data processing method for storage device, computer apparatus, and medium |
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