CN115753896A - Method and device for determining parameter value of process environment, and diffusion method and system - Google Patents

Method and device for determining parameter value of process environment, and diffusion method and system Download PDF

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CN115753896A
CN115753896A CN202211294635.8A CN202211294635A CN115753896A CN 115753896 A CN115753896 A CN 115753896A CN 202211294635 A CN202211294635 A CN 202211294635A CN 115753896 A CN115753896 A CN 115753896A
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value
humidity
stored
environment
current
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韩晓辉
赵赞良
王肖肖
王武林
史晨燕
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Ningxia Longi Solar Technology Co Ltd
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Ningxia Longi Solar Technology Co Ltd
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Abstract

The application discloses a method and a device for determining a process environment parameter value, a diffusion method and a diffusion system, relates to the field of solar cells, and is used for providing a technical scheme for improving the stability of sheet resistance. The method for determining the parameter value of the process environment comprises the following steps: and acquiring the current environmental humidity value of the current transplanted silicon wafer in the time period when the current transplanted silicon wafer enters the diffusion device. And acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value. And determining a current sheet resistance value corresponding to the current environment humidity value based on the corresponding relation between the environment humidity data and the sheet resistance data. And when the front resistance value is not matched with the target square resistance value, determining a compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.

Description

Method and device for determining parameter value of process environment, and diffusion method and system
Technical Field
The present application relates to the field of solar cells, and in particular, to a method and an apparatus for determining process environment parameter values, and a diffusion method and a diffusion system.
Background
At present, the crystalline silicon solar cell mainly adopts nitrogen to carry a doping source into a diffusion device which finishes loading the transplanted silicon wafer in advance, and PN junctions are manufactured through a thermal diffusion process. Also, the sheet resistance is usually used to characterize the performance parameters of the PN junction.
In the production process of manufacturing the PN junction, the sheet resistance is influenced by a plurality of factors such as the amount, the temperature, the time and the pressure of an introduced doping source, at present, the sheet resistance obtained in the last diffusion period is compared with a target sheet resistance, and then the process parameter of the next period is adjusted by combining industry experience to control the stability of the sheet resistance, but the adjustment of the process parameter has hysteresis, and the subjective judgment can bring large sheet resistance fluctuation. In order to control the sheet resistance more accurately and improve the stability of the sheet resistance, the process parameters must be changed to perform compensation adjustment during each production cycle.
Therefore, a method for determining a process environment parameter value is needed, which can accurately and rapidly perform compensation adjustment of a process parameter, avoid batch defective products caused by untimely adjustment, further improve productivity and yield, and reduce the production cost of a crystalline silicon battery.
Disclosure of Invention
The application aims to provide a method and a device for determining a process environment parameter value, a diffusion method and a diffusion system, which are used for providing a technical scheme for efficiently improving the sheet resistance stability and reducing the production cost of a crystalline silicon battery.
In a first aspect, the present application provides a method for determining a value of a parameter of a process environment. The method for determining the process environment parameter value comprises the following steps:
and acquiring the current environmental humidity value of the current transplanted silicon wafer in the time period when the current transplanted silicon wafer enters the diffusion device.
And acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value.
And determining a current sheet resistance value corresponding to the current environment humidity value based on the corresponding relation between the environment humidity data and the sheet resistance data.
And when the front resistance value is not matched with the target square resistance value, determining a compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
By adopting the technical scheme, the influence degree of the environmental humidity on the sheet resistance stability of the transplanted silicon wafer after diffusion treatment in the process of performing diffusion treatment on the transplanted silicon wafer is reduced. Based on the above, before the diffusion treatment is performed on the current transplanted silicon wafer, the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained in advance, so that the technological environmental parameter value when the diffusion treatment is performed on the current transplanted silicon wafer is correspondingly adjusted according to the current environmental humidity value. In addition, the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value is obtained, and the sheet resistance of the current transplanted silicon wafer after diffusion treatment is the current front resistance value if the current transplanted silicon wafer is subjected to diffusion treatment by adopting the preset process environment parameter value under the current environmental humidity value is determined based on the corresponding relation. When the front resistance value is not matched with the target square resistance value meeting the working requirement, the compensated process environment parameter value corresponding to the current environment humidity value can be determined based on the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat is effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance of the transplanted silicon wafer after diffusion treatment is large in fluctuation due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
In a possible implementation manner, the determining the compensated process environment parameter value corresponding to the current environment humidity value based on the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value includes:
and analyzing the plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determining a fitting relation between the environment humidity parameter and the process environment parameter value under the target resistance value.
And determining a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
Under the condition of adopting the technical scheme, the fitting relational expression is obtained by analyzing a plurality of pre-stored environment humidity values under the target sheet resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value, and is used for representing the relation between the environment humidity parameters and the process environment parameter values under the target sheet resistance value. Under the condition, based on the fitting relational expression and the current environment humidity value, the compensated process environment parameter value corresponding to the current environment humidity value under the target side resistance value can be accurately determined, the accuracy of the determined compensated process environment parameter value is improved, the current transplanted silicon wafer can be ensured to be subjected to diffusion treatment under the current environment humidity value and based on the determined compensated process environment parameter value in the actual application process, the actual side resistance value of the current transplanted silicon wafer is matched with the target side resistance value, and the stability of the actual side resistance value of the current transplanted silicon wafer after the diffusion treatment is further improved.
In a possible implementation manner, the plurality of pre-stored ambient humidity values include: a first pre-stored ambient humidity value in the ambient humidity data, and at least two second pre-stored ambient humidity values in the ambient humidity data. The plurality of prestored process environment parameter values include: a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value. The first pre-stored process environment parameter value is a preset process environment parameter value.
Before the step of analyzing the plurality of pre-stored ambient humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value after obtaining the corresponding relationship between the ambient humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same pre-stored process environment parameter value and determining the fitting relationship between the ambient humidity parameter and the process environment parameter value under the target sheet resistance value, the process environment parameter value determining method further comprises the following steps:
and acquiring the corresponding relation between the sheet resistance data and the process environment data under the same preset environment humidity value.
And determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity data and the sheet resistance data and the corresponding relation between the sheet resistance data and the process environment data.
And determining the environmental humidity difference between the first pre-stored environmental humidity value and at least two second pre-stored environmental humidity values respectively.
And determining a second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
Under the condition of adopting the technical scheme, the corresponding relation between the environment humidity increment and the process environment parameter increment can be firstly determined, further, the environment humidity difference between the first pre-stored environment humidity value and at least two second pre-stored environment humidity values is determined, and then the second pre-stored process environment parameter value corresponding to each environment humidity difference value is determined based on the corresponding relation between the environment humidity increment and the process environment parameter increment, so that a plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value can be more accurately determined.
In a possible implementation manner, the determining the corresponding relationship between the environmental humidity increment and the process environment parameter increment based on the corresponding relationship between the environmental humidity data and the sheet resistance data and the corresponding relationship between the sheet resistance data and the process environment data includes:
and determining the corresponding relation between the ambient humidity increment and the sheet resistance increment based on the corresponding relation between the ambient humidity data and the sheet resistance data.
And determining the corresponding relation between the increment of the process environment parameter and the increment of the sheet resistance based on the corresponding relation between the sheet resistance data and the process environment data.
And determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity increment and the sheet resistance increment and the corresponding relation between the process environment parameter increment and the sheet resistance increment.
Under the condition of adopting the technical scheme, the corresponding relation between the environment humidity increment and the process environment parameter increment can be determined respectively by determining the corresponding relation between the environment humidity increment and the sheet resistance increment and the corresponding relation between the process environment parameter increment and the sheet resistance increment, so that the second pre-stored process environment parameter value corresponding to each environment humidity difference value can be determined more accurately based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
In a possible implementation manner, before analyzing the plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value and determining the fitting relationship between the environment humidity parameter and the process environment parameter value under the target resistance value, the method for determining the process environment parameter value further includes: and acquiring a plurality of pre-stored environment humidity values under the target resistance value and a pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
Under the condition of adopting the technical scheme, before the compensated process environment parameter value corresponding to the current environment humidity value is determined, a plurality of pre-stored environment humidity values under the target resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value can be obtained in a pre-acquisition mode. In this case, after it is determined that the current sheet resistance value is not matched with the target sheet resistance value, the compensated process environment parameter value corresponding to the current humidity value is determined directly based on the plurality of pre-stored environment humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, so that the waiting time for determining the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value in the actual application process can be saved, the rate for determining the compensated process environment parameter value can be increased, and the capacity of diffusion treatment can be increased. Meanwhile, another optional scheme is provided for obtaining the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and the applicability of the method under different application scenes is improved.
In one possible implementation, the process environment parameter values include one or more of a temperature value within the diffusion device, a gas flow value within the diffusion device, and a pressure value within the diffusion device. In this case, the types of the process environment parameter values have various optional schemes, and a suitable type of the process environment parameter values can be selected according to the requirements of the actual application scenarios, so that the applicability of the process environment parameter value determination method provided by the application in different application scenarios can be improved.
In a possible implementation manner, the plurality of pre-stored ambient humidity values include: a first pre-stored ambient humidity value in the ambient humidity data. The plurality of pre-stored process environment parameter values include: and presetting a process environment parameter value corresponding to the first pre-stored environment humidity value. And, in the case where the process environment parameter value is a temperature value within the diffusion device, the fitting relation includes:
T＝A×(R-R 0 )2+B×(R-R 0 )+T 0 。
wherein T is a process environment parameter value, T0 is a preset process environment parameter value, R is an environment humidity parameter, R0 is a first pre-stored environment humidity value, and A and B are fitting coefficients of the environment humidity parameter and the process environment parameter value.
In a possible implementation manner, the acquiring a current environmental humidity value in a time period when a current transplanted silicon wafer enters the diffusion device includes:
and acquiring a plurality of actual environment humidity values in the time period when the current transplanted silicon wafer enters the diffusion device.
And determining the arithmetic mean value of the plurality of actual environment humidity values as the current environment humidity value.
Under the condition of adopting above-mentioned technical scheme, through obtaining a plurality of actual environment humidity values, confirm the arithmetic mean value of a plurality of actual environment humidity values as current environment humidity value, can obtain comparatively reliable current environment humidity value, provide reliable data basis to the technology environmental parameter value after follow-up definite compensation, further guarantee to avoid the influence of environmental humidity change to the thermal oxide layer thickness that forms under the high thermal environment before advancing the boat, further improve the stability of sheet resistance, reduce the manufacturing cost of crystal silicon battery.
In a second aspect, the present application also provides a diffusion method, including:
the method for determining a value of a parameter of a process environment described in the first aspect or any one of the possible implementations of the first aspect.
And under the current environment humidity value, performing diffusion treatment on the current transplanted silicon wafer based on the compensated process environment parameter value.
In a possible implementation manner, the diffusion method further includes:
and when the front resistance value is matched with the target square resistance value, performing diffusion treatment on the current transplanted silicon wafer based on the preset process environment parameter value under the current environment humidity value.
In a third aspect, the application also provides a device for determining the value of the process environment parameter. The device for determining the parameter value of the process environment comprises:
and the first acquisition module is used for acquiring the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device.
And the second acquisition module is used for acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value.
And the first determining module is used for determining a current sheet resistance value corresponding to the current environment humidity value under the preset process environment parameter value based on the corresponding relation between the environment humidity data and the sheet resistance data.
And the second determining module is used for determining the compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value when the current square resistance value is not matched with the target square resistance value.
In one possible implementation, the second determining module includes:
the first determining submodule is used for analyzing the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determining a fitting relation between the environment humidity parameter and the process environment parameter value under the target square resistance value.
And the second determining submodule is used for determining a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
In a possible implementation manner, the plurality of pre-stored ambient humidity values include: a first pre-stored ambient humidity value in the ambient humidity data, and at least two second pre-stored ambient humidity values in the ambient humidity data.
The plurality of pre-stored process environment parameter values comprise: a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value. The first pre-stored process environment parameter value is a preset process environment parameter value.
The process environment parameter value determination device further comprises:
and the third determining module is used for determining the environmental humidity difference between the first pre-stored environmental humidity value and at least two second pre-stored environmental humidity values respectively.
And the third acquisition module is used for acquiring the corresponding relation between the sheet resistance data and the process environment data under the same preset environment humidity value.
And the fourth determining module is used for determining the corresponding relation between the environmental humidity increment and the technological environment parameter increment based on the corresponding relation between the environmental humidity data and the sheet resistance data and the corresponding relation between the sheet resistance data and the technological environment data.
And the fifth determining module is used for determining a second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
In one possible implementation, the fourth determining module includes:
and the third determining submodule is used for determining the corresponding relation between the environment humidity increment and the sheet resistance increment based on the corresponding relation between the environment humidity data and the sheet resistance data.
And the fourth determining submodule is used for determining the corresponding relation between the process environment parameter increment and the sheet resistance increment based on the corresponding relation between the sheet resistance data and the process environment data.
And the fifth determining submodule is used for determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity increment and the sheet resistance increment and the corresponding relation between the process environment parameter increment and the sheet resistance increment.
In a possible implementation manner, the apparatus for determining a value of the process environment parameter further includes:
and the third acquisition module is used for acquiring a plurality of pre-stored environment humidity values under the target resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value.
In one possible implementation manner, the first obtaining module includes:
and the first acquisition submodule is used for acquiring a plurality of actual environment humidity values in a time period when the current transplanted silicon wafer enters the diffusion device.
And the sixth determining submodule is used for determining the arithmetic mean value of the plurality of actual environment humidity values as the current environment humidity value.
In a fourth aspect, the present application further provides a diffusion system. The diffusion device includes:
a process environment parameter value determination apparatus as described in the third aspect or any possible implementation manner of the third aspect.
And the first diffusion device is used for performing diffusion treatment on the current transplanted silicon wafer based on the compensated process environment parameter value under the current environment humidity value.
In a possible implementation manner, the diffusion system further includes a second diffusion device, configured to perform diffusion processing on the current transplanted silicon wafer based on a preset process environment parameter value under the current environment humidity value when the current sheet resistance value matches the target sheet resistance value.
In a fifth aspect, the present application further provides an electronic device. The electronic device includes: one or more processors, and one or more machine-readable media having instructions stored thereon. The instructions, when executed by one or more processors, cause performance of the method for determining a value of a process environment parameter as described in the first aspect or any of the possible implementations of the first aspect or the method for diffusing as described in the second aspect or any of the possible implementations of the second aspect.
For the beneficial effects of the second aspect to the fifth aspect and the various implementation manners of the present invention, reference may be made to beneficial effect analysis in the first aspect and the various implementation manners of the first aspect, which are not described herein again.
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The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic system structure diagram illustrating a production process of a crystalline silicon cell provided in an embodiment of the present application;
FIG. 2 is a schematic flow chart of a method for determining a value of a process environment parameter according to an embodiment of the present disclosure;
FIG. 3 is a schematic flow chart of another method for determining a value of a process environment parameter according to an embodiment of the present application;
FIG. 4 is a data diagram illustrating a compensation mapping relationship between a difference between ambient humidity and a compensated process environment parameter value of a test process according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram illustrating the operation of ambient humidity and corresponding sheet resistance data after compensation processing is performed on a process environment parameter value according to an embodiment of the present disclosure;
FIG. 6 is a schematic flow chart illustrating a method for determining values of parameters of another process environment according to an embodiment of the present application;
FIG. 7 is a schematic diagram illustrating a configuration of an apparatus for determining a value of a parameter of a process environment according to an embodiment of the present application;
FIG. 8 is a schematic diagram illustrating a diffusion system according to an embodiment of the present application;
fig. 9 is a schematic diagram illustrating a hardware structure of an electronic device according to an embodiment of the present application;
fig. 10 shows a schematic structural diagram of a chip provided in an embodiment of the present application.
Detailed Description
In the embodiments of the present application, terms such as "first" and "second" are used to distinguish the same or similar items having substantially the same function and action. For example, the first threshold and the second threshold are only used for distinguishing different thresholds, and the sequence order of the thresholds is not limited. Those skilled in the art will appreciate that the terms "first," "second," etc. do not denote any order or quantity, nor do the terms "first," "second," etc. denote any order or importance.
It is noted that, in the present application, words such as "exemplary" or "for example" are used to mean exemplary, illustrative, or descriptive. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
In the present application, "at least one" means one or more, "a plurality" means two or more. "and/or" describes the association relationship of the associated object, indicating that there may be three relationships, for example, a and/or B, which may indicate: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a and b combination, a and c combination, b and c combination, or a, b and c combination, wherein a, b and c can be single or multiple.
Currently, compensation adjustment is performed on process parameters, and the process parameters used in the next production cycle are predicted and adjusted mainly by staff according to the sheet resistance result in the previous production cycle. The staff can only predict and adjust according to the sheet resistance results of the previous production cycles and personal working experience, and does not analyze and adjust from fundamental process condition variables, so that the process parameters can not be predicted and adjusted accurately when the process condition change rule changes suddenly. In the process of predicting and adjusting the process parameters by the staff, certain analysis can be carried out on the temperature, the flow, the pressure and the like according to the process operation record of the machine, and the process parameters are predicted and adjusted by combining the sheet resistance results of the previous production cycles. The inventor of this application finds that the influence of the thermal oxide layer thickness that forms under the high thermal environment before advancing the boat is especially obvious that the environmental humidity is undulant, and the thermal oxide layer thickness that forms under the high thermal environment before advancing the boat on transplanted silicon chip surface is the important factor that influences the stability of square resistance among the continuous production process, then the environmental humidity is undulant greatly to lead to the square resistance to fluctuate bigger, further lead to adjusting frequency greatly increased, staff labor load intensity is high, the stability of square resistance has been reduced, be unfavorable for reducing the manufacturing cost of crystal silicon battery.
In order to solve the above technical problem, an embodiment of the present application provides a method for determining a parameter value of a process environment. Fig. 1 is a schematic system structure diagram illustrating a production process of a crystalline silicon battery provided in an embodiment of the present application, and as shown in fig. 1, the production structure includes a transfer device 01, a diffusion device 03, an electronic device 04, and an ambient humidity detection device 05. The transfer device 01 is used for carrying and transporting the transplanted silicon wafer 02. The environmental humidity detection device 05 is connected to the electronic apparatus 04. The specific setting position of the ambient humidity detection device 05 can be determined according to the actual application scenario. For example: the environmental humidity detection device 05 may be disposed above the transfer device 01. The electronic device 04 is connected to the diffusion device. The electronic device can be a machine control computer, and one production cycle of the crystalline silicon battery can comprise the following three steps: step S1: the silicon wafer 02 is transplanted into the diffusion device 03 through the transfer device 01. Step S2: and (5) processing. And step S3: and unloading the transplanted silicon wafer 02 out of the diffusion device 03. The process that the ambient humidity influences the thickness of the thermal oxide layer formed in the high-heat environment before the boat enters is carried out in the process of the step S1, the compensated process environment parameter value corresponding to the current ambient humidity value is determined based on a plurality of pre-stored ambient humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value, and at the moment, the diffusion treatment is carried out on the current transplanted silicon wafer based on the compensated process environment parameter value under the current ambient humidity value. After diffusion treatment, the actual square resistance value of the current transplanted silicon wafer is matched with the target square resistance value, and the step S2 is completed, so that the influence of the change of the environmental humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat can be effectively improved, the stability of the square resistance is improved, and the production cost of the crystalline silicon battery is reduced.
Fig. 2 is a schematic flowchart illustrating a method for determining a value of a process environment parameter according to an embodiment of the present application, where as shown in fig. 2, the method for determining a value of a process environment parameter includes:
step 101: and acquiring the current environmental humidity value of the current transplanted silicon wafer in the time period when the current transplanted silicon wafer enters the diffusion device.
In this application, can detect current environment humidity value through environment humidity detection device, combine fig. 1, after environment humidity detection device 05 detected current environment humidity value, send current environment humidity value to electronic equipment 04. In practical application, the environment humidity detection device can be a hygrometer and is used for detecting the current environment humidity value, the specific structure of the environment humidity detection device is not limited by the embodiment of the application, and specific adjustment can be carried out according to practical application scenes.
In the present application, the specific implementation of step 101 may include the following sub-steps:
substep A1: and acquiring a plurality of actual environment humidity values in the time period when the current transplanted silicon wafer enters the diffusion device.
Substep A2: the arithmetic mean value of a plurality of actual environment humidity values is determined as the current environment humidity value, a reliable current environment humidity value can be obtained, a reliable data base is provided for the subsequent process environment parameter values after compensation, the influence of the environment humidity change on the thickness of a thermal oxide layer formed in a high-heat environment before the boat enters can be further avoided, the stability of the sheet resistance is improved, and the production cost of the crystalline silicon battery is reduced.
Step 102: and acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value.
In the present application, referring to fig. 1, the environmental humidity detection device 05 can detect environmental humidity data in a time period when a transplanted silicon wafer enters the diffusion device, that is, environmental humidity data in the diffusion device where the transplanted silicon wafer is located in the time period from when the transplanted silicon wafer enters the diffusion device to when the transplanted silicon wafer completely enters the diffusion device, and transmit the environmental humidity data to the electronic device 04. The data is hindered to the side that can obtain environment humidity data correspondence through electronic equipment, and environment humidity data can include a plurality of environment humidity values, and the side hinders data and can include a plurality of sides resistances that a plurality of environment humidity values correspond, then can obtain environment humidity data and the side and hinder the corresponding relation of data.
Optionally, the corresponding relationship between the environmental humidity data and the sheet resistance data may be stored in the electronic device in a form of a table.
The preset process environment parameter value can be any process environment parameter value which has influence on the sheet resistance of the transplanted silicon wafer after diffusion treatment. Illustratively, the preset process environment parameter values include one or more of a temperature value within the diffusion device, a gas flow value within the diffusion device, and a pressure value within the diffusion device. For example: and presetting the process environment parameter value as a temperature value in the diffusion device. Another example is: the preset process environment parameter values include temperature values in the diffusion device and gas flow values in the diffusion device. In addition, the embodiment of the application does not specifically limit the size of the preset process environment parameter value, and it is necessary to ensure that the same preset process environment parameter value is maintained in the process of acquiring the corresponding relationship between the environment humidity data and the sheet resistance data.
In the present application, the table shows a correspondence table between a plurality of ambient humidity values and a plurality of square resistance values in the square resistance data:
watch 1
Figure BDA0003902632630000121
Figure BDA0003902632630000131
In the present application, the execution sequence of the above steps 101 and 102 is not particularly limited.
Step 103: and determining a current sheet resistance value corresponding to the current environment humidity value based on the corresponding relation between the environment humidity data and the sheet resistance data.
In the application, the electronic device can compare and match the current environment humidity value with the corresponding relation between the environment humidity data and the sheet resistance data, and determine the current sheet resistance value corresponding to the current environment humidity value.
Step 104: and when the front resistance value is not matched with the target square resistance value, determining a compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
In the application, a plurality of pre-stored environment humidity values under the target square resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value can be analyzed, and a fitting relation between the environment humidity parameters and the process environment parameter values under the target square resistance value is determined. And further, based on the fitting relation and the current environment humidity value, determining a compensated process environment parameter value corresponding to the current environment humidity value.
In summary, the method for determining the process environment parameter value provided by the embodiment of the application reduces the influence degree of the environment humidity on the sheet resistance stability of the transplanted silicon wafer after diffusion treatment in the process of performing diffusion treatment on the transplanted silicon wafer. Based on the above, before the diffusion treatment is performed on the current transplanted silicon wafer, the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained in advance, so that the technological environmental parameter value when the diffusion treatment is performed on the current transplanted silicon wafer is correspondingly adjusted according to the current environmental humidity value. In addition, the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value is obtained, the current environmental humidity value is determined based on the corresponding relation, and if the preset process environment parameter value is adopted to carry out diffusion treatment on the current transplanted silicon wafer, the sheet resistance of the current transplanted silicon wafer after the diffusion treatment is the current front resistance value. When the front resistance value is not matched with the target square resistance value meeting the working requirement, the compensated process environment parameter value corresponding to the current environment humidity value can be determined based on the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat is effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance of the transplanted silicon wafer after diffusion treatment is large in fluctuation due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
Fig. 3 is a schematic flow chart of another method for determining a value of a process environment parameter according to an embodiment of the present application, where as shown in fig. 3, the method for determining a value of a process environment parameter includes:
step 201: and acquiring the current environmental humidity value of the current transplanted silicon wafer in the time period when the current transplanted silicon wafer enters the diffusion device.
In this application, can detect current environment humidity value through environment humidity detection device, combine fig. 1, after environment humidity detection device 05 detected current environment humidity value, send current environment humidity value to electronic equipment 04. In practical application, the environment humidity detection device can be a hygrometer and is used for detecting the current environment humidity value, the specific structure of the environment humidity detection device is not limited by the embodiment of the application, and specific adjustment can be carried out according to practical application scenes.
In the present application, the specific implementation of step 201 may include the following sub-steps:
substep A1: and acquiring a plurality of actual environment humidity values in the time period when the current transplanted silicon wafer enters the diffusion device.
Substep A2: the arithmetic mean value of a plurality of actual environment humidity values is determined as the current environment humidity value, a reliable current environment humidity value can be obtained, a reliable data base is provided for the subsequent process environment parameter values after compensation, the influence of the environment humidity change on the thickness of a thermal oxide layer formed in a high-heat environment before the boat enters can be further avoided, the stability of the sheet resistance is improved, and the production cost of the crystalline silicon battery is reduced.
Step 202: and acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value.
In the present application, referring to fig. 1, the environmental humidity detection device 05 can detect environmental humidity data in a time period when a transplanted silicon wafer enters the diffusion device, that is, environmental humidity data in the diffusion device where the transplanted silicon wafer is located in the time period from when the transplanted silicon wafer enters the quartz tube from one end of the transplanted silicon wafer to when the transplanted silicon wafer completely enters the quartz tube, and transmit the environmental humidity data to the electronic device 04. The data is hindered to the side that can obtain environment humidity data correspondence through electronic equipment, and environment humidity data can include a plurality of environment humidity values, and the side hinders data and can include a plurality of sides resistances that a plurality of environment humidity values correspond, then can obtain environment humidity data and the side and hinder the corresponding relation of data.
Optionally, the corresponding relationship between the environmental humidity data and the sheet resistance data may be stored in the electronic device in a form of a table.
The preset process environment parameter values comprise one or more of temperature values in the diffusion device, gas flow values in the diffusion device and pressure values in the diffusion device, specific parameter values of the preset process environment parameter values are not specifically limited in the embodiment of the application, and the same process environment parameter value is kept in the process of obtaining the corresponding relation between the environment humidity data and the sheet resistance data.
Step 203: and determining a current sheet resistance value corresponding to the current environment humidity value based on the corresponding relation between the environment humidity data and the sheet resistance data.
In the application, the electronic device may compare and match the current environment humidity value with the corresponding relationship between the environment humidity data and the sheet resistance data, and determine the current sheet resistance value corresponding to the current environment humidity value.
Step 204: and acquiring the corresponding relation between the sheet resistance data and the process environment data under the same preset environment humidity value.
In this application, can obtain the corresponding relation of square resistance data and technology environment data under the same preset environment humidity value through electronic equipment, and specifically, electronic equipment can obtain the technology environment parameter value that every square resistance value in the square resistance data corresponds under the same preset environment humidity value, obtains the corresponding relation of square resistance data and technology environment data.
In the present application, the execution sequence of the above steps 202 and 204 is not particularly limited.
Step 205: and determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity data and the sheet resistance data and the corresponding relation between the sheet resistance data and the process environment data.
In the present application, the specific implementation of the step 205 may include the following sub-steps:
substep B1: and determining the corresponding relation between the ambient humidity increment and the sheet resistance increment based on the corresponding relation between the ambient humidity data and the sheet resistance data.
In this application, the electronic device may determine, based on a corresponding relationship between the ambient humidity data and the sheet resistance data, a sheet resistance increment corresponding to humidity of each increased humidity by a preset unit, that is, a relationship between the ambient humidity increment and the sheet resistance increment.
Substep B2: and determining the corresponding relation between the increment of the process environment parameter and the increment of the sheet resistance based on the corresponding relation between the sheet resistance data and the process environment data.
In this application, the electronic device may determine, according to the corresponding relationship between the sheet resistance data and the process environment data obtained in step 204, a corresponding process environment parameter increment for each adjustment of the sheet resistance according to the sheet resistance increment, so as to obtain a corresponding relationship between the process environment parameter increment and the sheet resistance increment.
In the present application, the order of execution of the above substeps B1 and B2 is not particularly limited.
Substep B3: and determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity increment and the sheet resistance increment and the corresponding relation between the process environment parameter increment and the sheet resistance increment.
In the application, the sheet resistance increment corresponding to the ambient humidity increment can be determined based on the corresponding relationship between the ambient humidity increment and the sheet resistance increment and by combining the corresponding relationship between the process environment parameter increment and the sheet resistance increment, and the corresponding ambient parameter adjustment amount, namely the corresponding relationship between the ambient humidity increment and the process environment parameter increment, is further determined every time the sheet resistance is adjusted according to the sheet resistance increment, so that the second prestored process environment parameter value corresponding to each ambient humidity difference value can be determined based on the corresponding relationship between the ambient humidity increment and the process environment parameter increment.
For example, when the process environment parameter value is a temperature value in the diffusion device, and the humidity increment is 1%, the corresponding sheet resistance increment is 1.3 ohms, and the corresponding temperature process environment parameter increment is 0.09 ℃. The embodiment of the present application is not particularly limited to this, and may be specifically adjusted according to an actual application scenario.
Step 206: and determining the environmental humidity difference between the first pre-stored environmental humidity value and at least two second pre-stored environmental humidity values respectively.
In the present application, the plurality of pre-stored ambient humidity values comprises: a first pre-stored ambient humidity value in the ambient humidity data, and at least two second pre-stored ambient humidity values in the ambient humidity data.
Step 207: and determining a second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
In the present application, the plurality of pre-stored process environment parameter values include: a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value. The first pre-stored process environment parameter value is a preset process environment parameter value.
Optionally, the first pre-stored process environment parameter value may be processed in combination with the ambient humidity difference value based on a corresponding relationship between the ambient humidity increase and the process environment parameter increase to obtain a second pre-stored process environment parameter value corresponding to each ambient humidity difference value, that is, a plurality of pre-stored ambient humidity values under the target sheet resistance value and a pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value may be determined, and then the compensated process environment parameter value corresponding to the current ambient humidity value may be determined based on the plurality of pre-stored ambient humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed under a high-temperature environment before entering the boat can be effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance fluctuation of the transplanted silicon wafer after diffusion treatment is large due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
Fig. 4 is a data diagram illustrating a compensation correspondence relationship between an ambient humidity difference value of a test process and a compensated process environment parameter value according to an embodiment of the present application, where as shown in fig. 4, a horizontal axis x represents an ambient humidity difference value (R-R) 0 ) The vertical axis y represents the temperature compensation parameter T, and after the processing in the above steps 206 and 207, a plurality of data points shown in fig. 4 can be obtained, where the data points are plotted on the abscissa, which is the difference between a plurality of second pre-stored environment humidity values and the first pre-stored environment humidity value in the plurality of pre-stored environment humidity values, and the ordinate is the pre-stored process environment parameter value corresponding to the plurality of pre-stored environment humidity values, that is, the ordinate is the compensated process environment parameter value corresponding to the difference between the plurality of second pre-stored environment humidity values and the first pre-stored environment humidity value.
Step 208: when the front resistance value is not matched with the target square resistance value, analyzing the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determining a fitting relation between the environment humidity parameter and the process environment parameter value under the target square resistance value.
The fitting relational expression is obtained by analyzing a plurality of pre-stored environment humidity values under the target sheet resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value, and is used for representing the relation between the environment humidity parameters and the process environment parameter values under the target sheet resistance value. Under the condition, based on the fitting relational expression and the current environment humidity value, the compensated process environment parameter value corresponding to the current environment humidity value under the target resistance value can be accurately determined, the accuracy of the determined compensated process environment parameter value is improved, the current transplanted silicon wafer can be ensured to be matched with the target resistance value after the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value under the current environment humidity value in the actual application process, and the stability of the actual resistance value of the current transplanted silicon wafer after the diffusion treatment is further improved.
In this application, referring to fig. 4, based on the plurality of data points shown in fig. 4, the abscissa of the plurality of data points is the difference between a plurality of second pre-stored environment humidity values in the plurality of pre-stored environment humidity values and the first pre-stored environment humidity value, the ordinate is the pre-stored process environment parameter value corresponding to the plurality of pre-stored environment humidity values, that is, the ordinate is the compensated process environment parameter value corresponding to the difference between the plurality of second pre-stored environment humidity values and the first pre-stored environment humidity value, the fitting process is performed to determine the fitting relation between the process environment parameter value and the environment parameter value under the target sheet resistance value, y = -10.964x 2 +17.688x+769.95。
In the present application, the process environment parameter values include one or more of a temperature value within the diffusion device, a gas flow value within the diffusion device, and a pressure value within the diffusion device.
Optionally, the plurality of pre-stored ambient humidity values comprises: a first pre-stored ambient humidity value in the ambient humidity data. The plurality of pre-stored process environment parameter values include: and presetting a process environment parameter value corresponding to the first pre-stored environment humidity value. In the case where the process environment parameter value is a temperature value within the diffusion device, fitting the relationship includes:
T＝A×(R-R 0 ) 2 +B×(R-R 0 )+T 0 。
wherein T is a process environment parameter value, T 0 For presetting the process environment parameter value, R is the environment humidity parameter, R 0 The first pre-stored environmental humidity value is a fitting coefficient of an environmental humidity parameter and a process environmental parameter value, fitting coefficients of environmental humidity values corresponding to different processes and compensated process temperature values are different, and specific fitting coefficients can be determined according to practical application scenes.
For example, as shown in fig. 4, y = -10.964x 2 +17.688x +769.95, wherein, under the test process, A is-10.964, B is 17.688, T 0 At 769.95 of R 2 =0.9998, in particular, ambient humidity difference (R-R) 0 ) The corresponding relation with the process environment parameter value T is shown in the following table II:
Figure BDA0003902632630000191
Figure BDA0003902632630000201
step 209: and determining a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
In the present application, the process environment parameter values include one or more of a temperature value within the diffusion device, a gas flow value within the diffusion device, and a pressure value within the diffusion device.
And under the condition that the preset process environment parameter value comprises the temperature value in the diffusion device, the compensated process environment parameter value correspondingly comprises the temperature value in the diffusion device. And under the condition that the preset process environment parameter value comprises the flow value in the diffusion device, the compensated process environment parameter value correspondingly comprises the flow value in the diffusion device. And under the condition that the preset process environment parameter value comprises the pressure value in the diffusion device, the compensated process environment parameter value correspondingly comprises the pressure value in the diffusion device. And under the condition that the preset process environment parameter values comprise the temperature value in the diffusion device and the gas flow value in the diffusion device, the compensated process environment parameter values correspondingly comprise the temperature value in the diffusion device and the gas flow value in the diffusion device. The embodiment of the present application is not particularly limited to this, and may be adjusted according to an actual application scenario.
Fig. 5 shows an operation schematic diagram of the ambient humidity and the corresponding sheet resistance data after compensation processing is performed on the process environmental parameter value provided by the embodiment of the present application, as shown in fig. 5, the sheet resistance data in fig. 5 refers to an average sheet resistance value, as can be seen from fig. 5, the sheet resistance is always in a stable state under the condition that the ambient humidity is always changed, so that the present application can effectively improve the influence of the ambient humidity change on the thickness of the thermal oxide layer formed under the high thermal environment before the boat enters, improve the stability of the sheet resistance, and further, reduce the production cost of the crystalline silicon battery.
In conclusion, the method for determining the process environment parameter value provided by the embodiment of the application reduces the influence degree of the environmental humidity on the sheet resistance stability of the transplanted silicon wafer after diffusion treatment in the process of performing diffusion treatment on the transplanted silicon wafer. Based on the above, before the diffusion treatment is performed on the current transplanted silicon wafer, the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained in advance, so that the technological environmental parameter value when the diffusion treatment is performed on the current transplanted silicon wafer is correspondingly adjusted according to the current environmental humidity value. In addition, the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value is obtained, and the sheet resistance of the current transplanted silicon wafer after diffusion treatment is the current front resistance value if the current transplanted silicon wafer is subjected to diffusion treatment by adopting the preset process environment parameter value under the current environmental humidity value is determined based on the corresponding relation. When the front resistance value is not matched with the target square resistance value meeting the working requirement, the compensated process environment parameter value corresponding to the current environment humidity value can be determined based on a plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat is effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance of the transplanted silicon wafer after diffusion treatment is large in fluctuation due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
Fig. 6 is a schematic flow chart illustrating a method for determining a value of a process environment parameter according to an embodiment of the present application, where as shown in fig. 6, the method includes:
step 301: and acquiring the current environmental humidity value of the current transplanted silicon wafer in the time period when the current transplanted silicon wafer enters the diffusion device.
Step 302: and acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value.
Step 303: and determining a current sheet resistance value corresponding to the current environment humidity value based on the corresponding relation between the environment humidity data and the sheet resistance data.
Step 304: and acquiring a plurality of pre-stored environment humidity values under the resistance value of the target space and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value.
Step 305: and analyzing the plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determining a fitting relation between the environment humidity parameter and the process environment parameter value under the target resistance value.
Step 306: and determining a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
Before the compensated process environment parameter value corresponding to the current environment humidity value is determined, a plurality of pre-stored environment humidity values under the target resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value can be obtained in a pre-acquisition mode. Under the condition, after the situation that the current sheet resistance value is not matched with the target sheet resistance value is determined, the compensated process environment parameter value corresponding to the current humidity value is determined directly based on the plurality of pre-stored environment humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, the waiting time for determining the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value in the actual application process can be saved, the speed for determining the compensated process environment parameter value can be increased, and the production capacity of diffusion treatment is further improved. Meanwhile, another optional scheme is provided for obtaining the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and the applicability of the method under different application scenes is improved.
According to the method and the device, the influence degree of the environmental humidity on the sheet resistance stability of the transplanted silicon wafer after diffusion treatment in the process of performing diffusion treatment on the transplanted silicon wafer is reduced. Based on the above, before the diffusion treatment is performed on the current transplanted silicon wafer, the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained in advance, so that the technological environmental parameter value when the diffusion treatment is performed on the current transplanted silicon wafer is correspondingly adjusted according to the current environmental humidity value. In addition, the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value is obtained, and the sheet resistance of the current transplanted silicon wafer after diffusion treatment is the current front resistance value if the current transplanted silicon wafer is subjected to diffusion treatment by adopting the preset process environment parameter value under the current environmental humidity value is determined based on the corresponding relation. When the front resistance value is not matched with the target square resistance value meeting the working requirement, the compensated process environment parameter value corresponding to the current environment humidity value can be determined based on the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat is effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance of the transplanted silicon wafer after diffusion treatment is large in fluctuation due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
The embodiment of the application further provides a diffusion method, which comprises the method for determining the process environment parameter value shown in any one of fig. 1 to 6, and performs diffusion treatment on the current transplanted silicon wafer based on the compensated process environment parameter value under the current environment humidity value. And matching the actual square resistance value of the current transplanted silicon wafer with the target square resistance value after diffusion treatment.
Optionally, when the front resistance value is matched with the target sheet resistance value, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the preset process environment parameter value.
In summary, when the current square resistance value is not matched with the target square resistance value meeting the working requirement, the compensated process environment parameter value corresponding to the current environment humidity value may be determined based on the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat is effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance of the transplanted silicon wafer after diffusion treatment is large in fluctuation due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
Fig. 7 is a schematic structural diagram of a device for determining a parameter value of a process environment according to an embodiment of the present application, which is applied to the method for determining a parameter value of a process environment according to any one of fig. 1 to 6, and as shown in fig. 7, the device 400 for determining a parameter value of a process environment includes:
the first obtaining module 401 is configured to obtain a current environmental humidity value in a time period when the current transplanted silicon wafer enters the diffusion device.
A second obtaining module 402, configured to obtain a corresponding relationship between environmental humidity data and sheet resistance data in a time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value.
A first determining module 403, configured to determine, based on a corresponding relationship between the ambient humidity data and the sheet resistance data, a current sheet resistance value corresponding to the current ambient humidity value under a preset process environment parameter value.
A second determining module 404, configured to determine, when the current sheet resistance value does not match the target sheet resistance value, a compensated process environment parameter value corresponding to the current environment humidity value based on the plurality of pre-stored environment humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
In one possible implementation, the second determining module includes:
the first determining submodule is used for analyzing the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determining a fitting relation between the environment humidity parameter and the process environment parameter value under the target square resistance value.
And the second determining submodule is used for determining a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
In one possible implementation, the plurality of pre-stored ambient humidity values comprises: a first pre-stored ambient humidity value in the ambient humidity data, and at least two second pre-stored ambient humidity values in the ambient humidity data.
The plurality of pre-stored process environment parameter values includes: a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value. The first pre-stored process environment parameter value is a preset process environment parameter value.
The device still includes:
and the third determining module is used for determining the environmental humidity difference between the first pre-stored environmental humidity value and at least two second pre-stored environmental humidity values respectively.
And the third acquisition module is used for acquiring the corresponding relation between the sheet resistance data and the process environment data under the same preset environment humidity value.
And the fourth determining module is used for determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity data and the sheet resistance data and the corresponding relation between the sheet resistance data and the process environment data.
And the fifth determining module is used for determining a second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
In one possible implementation, the fourth determining module includes:
and the third determining submodule is used for determining the corresponding relation between the environment humidity increment and the sheet resistance increment based on the corresponding relation between the environment humidity data and the sheet resistance data.
And the fourth determining submodule is used for determining the corresponding relation between the process environment parameter increment and the sheet resistance increment based on the corresponding relation between the sheet resistance data and the process environment data.
And the fifth determining submodule is used for determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity increment and the sheet resistance increment and the corresponding relation between the process environment parameter increment and the sheet resistance increment.
In one possible implementation, the apparatus further includes:
and the third acquisition module is used for acquiring a plurality of pre-stored environment humidity values under the target resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value.
In one possible implementation manner, the first obtaining module includes:
and the first acquisition submodule is used for acquiring a plurality of actual environment humidity values in a time period when the current transplanted silicon wafer enters the diffusion device.
And the sixth determining submodule is used for determining the arithmetic mean value of the plurality of actual environment humidity values as the current environment humidity value.
In summary, the device for determining the process environment parameter value provided by the embodiment of the application reduces the influence degree of the ambient humidity on the sheet resistance stability of the transplanted silicon wafer after diffusion treatment in the process of performing diffusion treatment on the transplanted silicon wafer. Based on the above, before the diffusion treatment is performed on the current transplanted silicon wafer, the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained in advance, so that the technological environmental parameter value when the diffusion treatment is performed on the current transplanted silicon wafer is correspondingly adjusted according to the current environmental humidity value. In addition, the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value is obtained, and the sheet resistance of the current transplanted silicon wafer after diffusion treatment is the current front resistance value if the current transplanted silicon wafer is subjected to diffusion treatment by adopting the preset process environment parameter value under the current environmental humidity value is determined based on the corresponding relation. When the front resistance value is not matched with the target square resistance value meeting the working requirement, the compensated process environment parameter value corresponding to the current environment humidity value can be determined based on the plurality of pre-stored environment humidity values under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. Under the condition, in the actual application process, under the current environment humidity value, the current transplanted silicon wafer is subjected to diffusion treatment based on the determined compensated process environment parameter value, so that the actual square resistance value of the current transplanted silicon wafer after diffusion treatment can be matched with the target square resistance value, the influence of the change of the environment humidity on the thickness of a thermal oxide layer formed in a high-temperature environment before entering the boat is effectively improved, meanwhile, the automatic determination of the process environment parameter value can be realized, the problem that the square resistance of the transplanted silicon wafer after diffusion treatment is large in fluctuation due to the fact that the process environment parameter value is adjusted manually in the prior art is solved, the stability of the actual square resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.
The device for determining the parameter value of the process environment provided by the present application can implement the method for determining the parameter value of the process environment shown in fig. 1 to 6, and is not described herein again to avoid repetition.
Fig. 8 is a schematic structural diagram of a diffusion system according to an embodiment of the present application, and as shown in fig. 8, the diffusion system 500 includes the process environment parameter value determining apparatus 400 shown in fig. 7, and a first diffusion apparatus 501, configured to perform diffusion processing on a current transplanted silicon wafer based on a compensated process environment parameter value under a current environment humidity value.
Optionally, referring to fig. 8, the diffusion system 500 further includes a second diffusion device 502, configured to perform diffusion processing on the currently transplanted silicon wafer based on preset process environment parameter values under the current environment humidity value when the current sheet resistance value matches the target sheet resistance value.
The diffusion system provided by the application can realize the diffusion method of the application, and is not repeated here to avoid repetition.
The electronic device in the embodiment of the present application may be an apparatus, or may be a component, an integrated circuit, or a chip in a terminal. The device can be mobile electronic equipment or non-mobile electronic equipment. By way of example, the mobile electronic device may be a mobile phone, a tablet computer, a notebook computer, a palm top computer, a vehicle-mounted electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook or a Personal Digital Assistant (PDA), and the like, and the non-mobile electronic device may be a server, a Network ATTached Storage (NAS), a Personal Computer (PC), a Television (TV), a teller machine or a self-service machine, and the like, and the embodiments of the present application are not particularly limited.
The electronic device in the embodiment of the present application may be an apparatus having an operating system. The operating system may be an Android (Android) operating system, an ios operating system, or other possible operating systems, and embodiments of the present application are not limited specifically.
Fig. 9 shows a hardware structure diagram of an electronic device according to an embodiment of the present application. As shown in fig. 9, the electronic device 600 includes a processor 610.
As shown in fig. 9, the processor 610 may be a general processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more ics for controlling the execution of programs according to the present disclosure.
As shown in fig. 9, the electronic device 600 may further include a communication line 640. Communication link 640 may include a path that conveys information between the aforementioned components.
Optionally, as shown in fig. 9, the electronic device may further include a communication interface 620. The communication interface 620 may be one or more. Communication interface 620 may use any transceiver or the like for communicating with other devices or a communication network.
Optionally, as shown in fig. 9, the electronic device may further include a memory 630. The memory 630 is used for storing computer-executable instructions for performing the present solution and is controlled by the processor for execution. The processor is used for executing the computer execution instructions stored in the memory, so as to realize the method provided by the embodiment of the application.
As shown in fig. 9, memory 630 may be, but is not limited to, a read-only memory (ROM) or other type of static storage device that may store static information and instructions, a Random Access Memory (RAM) or other type of dynamic storage device that may store information and instructions, an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disk storage, optical disk storage (including compact disc, laser disc, optical disc, digital versatile disc, blu-ray disc, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. The memory 630, which may be separate, is coupled to the processor 610 via communication line 640. The memory 630 may also be integrated with the processor 610.
Optionally, the computer-executable instructions in the embodiments of the present application may also be referred to as application program codes, which are not specifically limited in the embodiments of the present application.
In one implementation, as shown in fig. 9, processor 610 may include one or more CPUs, such as CPU0 and CPU1 in fig. 9, for example.
In one embodiment, as shown in fig. 9, the terminal device may include a plurality of processors, such as the processor in fig. 9. Each of these processors may be a single core processor or a multi-core processor.
Fig. 10 is a schematic structural diagram of a chip provided in an embodiment of the present application. As shown in fig. 10, the chip 700 includes one or more than two (including two) processors 610.
Optionally, as shown in fig. 10, the chip further includes a communication interface 620 and a memory 630, and the memory 630 may include a read-only memory and a random access memory and provide operating instructions and data to the processor. The portion of memory may also include non-volatile random access memory (NVRAM).
In some embodiments, as shown in FIG. 10, memory 630 stores elements, execution modules or data structures, or a subset thereof, or an expanded set thereof.
In the embodiment of the present application, as shown in fig. 10, by calling an operation instruction stored in the memory (the operation instruction may be stored in the operating system), a corresponding operation is performed.
As shown in fig. 10, the processor 610 controls processing operations of any one of the terminal devices, and the processor 610 may also be referred to as a Central Processing Unit (CPU).
As shown in fig. 10, memory 630 may include both read-only memory and random access memory and provides instructions and data to the processor. A portion of the memory 630 may also include NVRAM. For example, in applications where the memory, communication interface, and memory are coupled together by a bus system that may include a power bus, a control bus, a status signal bus, etc., in addition to a data bus. For clarity of illustration, however, the various buses are labeled as bus system 710 in fig. 10.
As shown in fig. 10, the method disclosed in the embodiment of the present application may be applied to a processor, or may be implemented by a processor. The processor may be an integrated circuit chip having signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware in a processor or by instructions in the form of software. The processor may be a general purpose processor, a Digital Signal Processor (DSP), an ASIC, a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware components. The various methods, steps, and logic blocks disclosed in the embodiments of the present application may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method disclosed in connection with the embodiments of the present application may be directly implemented by a hardware decoding processor, or implemented by a combination of hardware and software modules in the decoding processor. The software modules may be located in ram, flash, rom, prom, or eprom, registers, etc. as is well known in the art. The storage medium is located in a memory, and a processor reads information in the memory and completes the steps of the method in combination with hardware of the processor.
In one aspect, a computer-readable storage medium is provided, in which instructions are stored, and when executed, the instructions implement the functions performed by the terminal device in the above embodiments.
In one aspect, a chip is provided, where the chip is applied in a terminal device, and the chip includes at least one processor and a communication interface, where the communication interface is coupled with the at least one processor, and the processor is configured to execute instructions to implement the functions performed by the process environment parameter value determination method or the diffusion method in the foregoing embodiments.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, it may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer programs or instructions. When the computer program or instructions are loaded and executed on a computer, the procedures or functions of the embodiments of the present application are performed in whole or in part. The computer may be a general purpose computer, special purpose computer, computer network, terminal, user equipment, or other programmable device. The computer program or instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another computer readable storage medium, for example, the computer program or instructions may be transmitted from one website site, computer, server, or data center to another website site, computer, server, or data center by wire or wirelessly. A computer-readable storage medium may be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that incorporates one or more available media. The available media may be magnetic media, such as floppy disks, hard disks, magnetic tape; or optical media such as Digital Video Disks (DVDs); it may also be a semiconductor medium, such as a Solid State Drive (SSD).
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Although the present application has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations can be made thereto without departing from the spirit and scope of the application. Accordingly, the specification and figures are merely exemplary of the present application as defined in the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the present application. It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include such modifications and variations.

Claims (19)

1. A method for determining values of process environment parameters, comprising:
acquiring a current environmental humidity value of a current transplanted silicon wafer in a time period when the current transplanted silicon wafer enters a diffusion device;
acquiring corresponding relation between environmental humidity data and sheet resistance data in a time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value;
determining a current sheet resistance value corresponding to the current environment humidity value based on the corresponding relation between the environment humidity data and the sheet resistance data;
and when the front resistance value is not matched with the target square resistance value, determining a compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of pre-stored environment humidity values under the target square resistance value and a pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
2. The method for determining a value of a process environment parameter according to claim 1, wherein the determining a compensated value of the process environment parameter corresponding to the current value of the environment humidity based on a plurality of pre-stored values of the environment humidity at the target resistance and a pre-stored value of the process environment parameter corresponding to each of the pre-stored values of the environment humidity comprises:
analyzing the plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determining a fitting relation between the environment humidity parameter and the process environment parameter value under the target resistance value;
and determining the compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
3. The method of claim 2, wherein the plurality of pre-stored ambient humidity values comprises: a first pre-stored ambient humidity value in the ambient humidity data and at least two second pre-stored ambient humidity values in the ambient humidity data;
the plurality of pre-stored process environment parameter values comprises: a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value; the first prestored process environment parameter value is the preset process environment parameter value;
after acquiring the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset technological environment parameter value, before analyzing the plurality of prestored environmental humidity values under the target resistance value and the prestored technological environment parameter value corresponding to each prestored environmental humidity value and determining the fitting relationship between the environmental humidity parameter and the technological environment parameter value under the target resistance value, the method for determining the technological environment parameter value further comprises the following steps:
acquiring the corresponding relation between the sheet resistance data and the process environment data under the same preset environment humidity value;
determining the corresponding relation between the environmental humidity increment and the technological environment parameter increment based on the corresponding relation between the environmental humidity data and the sheet resistance data and the corresponding relation between the sheet resistance data and the technological environment data;
determining the difference value of the environmental humidity between the first pre-stored environmental humidity value and at least two second pre-stored environmental humidity values respectively;
and determining the second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
4. The method for determining the value of the parameter of the process environment according to claim 3, wherein the determining the corresponding relationship between the increment of the ambient humidity and the increment of the parameter of the process environment based on the corresponding relationship between the data of the ambient humidity and the data of the sheet resistance and the corresponding relationship between the data of the sheet resistance and the data of the process environment comprises:
determining the corresponding relation between the environment humidity increment and the sheet resistance increment based on the corresponding relation between the environment humidity data and the sheet resistance data;
determining the corresponding relation between the process environment parameter increment and the sheet resistance increment based on the corresponding relation between the sheet resistance data and the process environment data;
and determining the corresponding relation between the environmental humidity increment and the technological environment parameter increment based on the corresponding relation between the environmental humidity increment and the sheet resistance increment and the corresponding relation between the technological environment parameter increment and the sheet resistance increment.
5. The method according to claim 2, wherein before analyzing the plurality of pre-stored ambient humidity values at the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value, and determining the fitting relationship between the ambient humidity parameter at the target resistance value and the process environment parameter value, the method further comprises:
and acquiring a plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
6. The method of any one of claims 1 to 5, wherein the process environment parameter values comprise one or more of temperature values within the diffusion device, gas flow values within the diffusion device and pressure values within the diffusion device.
7. A method as claimed in any one of claims 2 to 5, wherein the plurality of pre-stored ambient humidity values comprises: a first pre-stored ambient humidity value in said ambient humidity data; the plurality of pre-stored process environment parameter values comprises: the preset process environment parameter value corresponding to the first pre-stored environment humidity value;
in the case where the process environment parameter value is a temperature value within the diffusion device, the fitting relationship comprises:
T＝A×(R-R 0 ) 2 +B×(R-R 0 )+T 0 ；
wherein T is the value of the process environment parameter, and T is 0 Is the preset process environment parameter value, R is the environment humidity parameter, R is 0 And the A and the B are fitting coefficients of the environmental humidity parameter and the process environment parameter value, wherein the first pre-stored environmental humidity value is the first pre-stored environmental humidity value.
8. The method for determining the values of the process environment parameters according to any one of claims 1 to 5, wherein the step of obtaining the current environment humidity value of the current time period for the currently transplanted silicon wafer to enter the diffusion device comprises the following steps:
acquiring a plurality of actual environment humidity values in a time period when the current transplanted silicon wafer enters a diffusion device;
determining an arithmetic average of a plurality of the actual ambient humidity values as the current ambient humidity value.
9. A diffusion method, comprising:
the method for determining the value of the process environment parameter according to any one of claims 1 to 8;
and under the current environment humidity value, performing diffusion treatment on the current transplanted silicon wafer based on the compensated process environment parameter value.
10. The diffusion method of claim 9, further comprising:
and when the current front resistance value is matched with the target square resistance value, performing diffusion treatment on the current transplanted silicon wafer based on the preset process environment parameter value under the current environment humidity value.
11. A process environment parameter value determination apparatus, comprising:
the first acquisition module is used for acquiring the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device;
the second acquisition module is used for acquiring the corresponding relation between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value;
the first determining module is used for determining a current sheet resistance value corresponding to the current environment humidity value under a preset process environment parameter value based on the corresponding relation between the environment humidity data and the sheet resistance data;
and the second determining module is used for determining a compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of pre-stored environment humidity values under the target square resistance value and a pre-stored process environment parameter value corresponding to each pre-stored environment humidity value when the front resistance value is not matched with the target square resistance value.
12. The apparatus of claim 11, wherein the second determining module comprises:
the first determining submodule is used for analyzing the plurality of pre-stored environment humidity values under the target square resistance value and pre-stored process environment parameter values corresponding to the pre-stored environment humidity values, and determining a fitting relation between the environment humidity parameters and the process environment parameter values under the target square resistance value;
and the second determining submodule is used for determining the compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relation and the current environment humidity value.
13. The apparatus of claim 12, wherein the plurality of pre-stored ambient humidity values comprises: a first pre-stored ambient humidity value in the ambient humidity data and at least two second pre-stored ambient humidity values in the ambient humidity data;
the plurality of pre-stored process environment parameter values comprises: a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value; the first pre-stored process environment parameter value is the preset process environment parameter value;
the process environment parameter value determination device further comprises:
a third determining module, configured to determine an ambient humidity difference between the first pre-stored ambient humidity value and at least two of the second pre-stored ambient humidity values;
the third acquisition module is used for acquiring the corresponding relation between the sheet resistance data and the process environment data under the same preset environment humidity value;
the fourth determining module is used for determining the corresponding relation between the environmental humidity increment and the technological environment parameter increment based on the corresponding relation between the environmental humidity data and the sheet resistance data and the corresponding relation between the sheet resistance data and the technological environment data;
and the fifth determining module is used for determining the second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relation between the environment humidity increment and the process environment parameter increment.
14. The apparatus of claim 13, wherein the fourth determination module comprises:
the third determining submodule is used for determining the corresponding relation between the environment humidity increment and the sheet resistance increment based on the corresponding relation between the environment humidity data and the sheet resistance data;
the fourth determining submodule is used for determining the corresponding relation between the parameter increment of the process environment and the sheet resistance increment based on the corresponding relation between the sheet resistance data and the process environment data;
and the fifth determining submodule is used for determining the corresponding relation between the environment humidity increment and the process environment parameter increment based on the corresponding relation between the environment humidity increment and the sheet resistance increment and the corresponding relation between the process environment parameter increment and the sheet resistance increment.
15. The apparatus of claim 12, wherein the apparatus further comprises:
and the third acquisition module is used for acquiring a plurality of pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value.
16. The apparatus of any of claims 11 to 15, wherein the first obtaining module comprises:
the first obtaining submodule is used for obtaining a plurality of actual environment humidity values in a time period when the current transplanted silicon wafer enters the diffusion device;
and the sixth determining submodule is used for determining the arithmetic mean value of the plurality of actual environment humidity values as the current environment humidity value.
17. A diffusion system, comprising:
a process environment parameter value determining apparatus as claimed in any one of claims 11 to 16;
and the first diffusion device is used for performing diffusion treatment on the current transplanted silicon wafer based on the compensated process environment parameter value under the current environment humidity value.
18. The diffusion system of claim 17, further comprising a second diffusion device for performing the diffusion process on the currently transplanted silicon wafer at the current ambient humidity value based on the preset process environment parameter value when the current sheet resistance value and the target sheet resistance value match.
19. An electronic device, comprising: one or more processors; and one or more machine readable media having instructions stored thereon, which when executed by the one or more processors, cause performance of the process environment parameter value determination method of any of claims 1-8 or the diffusion method of any of claims 9-10.
CN202211294635.8A 2022-10-21 2022-10-21 Method and device for determining parameter value of process environment, and diffusion method and system Pending CN115753896A (en)

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CN202211294635.8A CN115753896A (en) 2022-10-21 2022-10-21 Method and device for determining parameter value of process environment, and diffusion method and system

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