CN115752061A - Device and method for regulating and controlling heat radiation based on isotope engineering - Google Patents
Device and method for regulating and controlling heat radiation based on isotope engineering Download PDFInfo
- Publication number
- CN115752061A CN115752061A CN202211247799.5A CN202211247799A CN115752061A CN 115752061 A CN115752061 A CN 115752061A CN 202211247799 A CN202211247799 A CN 202211247799A CN 115752061 A CN115752061 A CN 115752061A
- Authority
- CN
- China
- Prior art keywords
- isotope
- radiator
- radiation
- ratio
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 29
- 230000001276 controlling effect Effects 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 100
- 238000012546 transfer Methods 0.000 claims abstract description 45
- 230000033228 biological regulation Effects 0.000 claims abstract description 28
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 230000000155 isotopic effect Effects 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 42
- 230000005445 isotope effect Effects 0.000 description 26
- 230000003287 optical effect Effects 0.000 description 21
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 210000002381 plasma Anatomy 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- -1 lithium deuteride Chemical compound 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013016 damping Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 230000002285 radioactive effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005212 lattice dynamic Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- WHXSMMKQMYFTQS-BJUDXGSMSA-N (6Li)Lithium Chemical compound [6Li] WHXSMMKQMYFTQS-BJUDXGSMSA-N 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Control Of Temperature (AREA)
Abstract
The invention relates to a device and a method for regulating and controlling heat radiation based on isotope engineering, which can regulate and control the radiation heat transfer coefficient of a radiation heat flow modulation device, wherein the device comprises a first radiator and a second radiator which are oppositely arranged; wherein at least one component element in the first radiator and the second radiator has two or more than two stable isotopes; the film thickness monitoring is synchronously carried out on the growth of the radiator material through the proportional design of different isotopes in the material, the optimal material composition and structural design is realized, namely, the radiation heat flow modulation device based on isotope engineering regulation is prepared, and the adjustment of the radiation heat transfer coefficient is realized. The method has wide application range, and the space of the radiators can be in a micro-nano level and a macro level; can enhance and inhibit heat radiation transfer, and has heat radiation regulation and control capability of more than four orders of magnitude. Through the scheme, the regulation and control performance of thermal management, heat energy utilization and photoelectric devices based on thermal radiation is expected to be improved.
Description
Technical Field
The invention relates to the technical field of thermal regulation, in particular to a device and a method for regulating and controlling thermal radiation based on isotope engineering.
Background
Many elements have two or more stable isotopes, and materials of different isotopic compositions can often exhibit different physical properties due to differences in mass and core structure, particularly those closely related to crystal structure and lattice dynamics resulting from isotopic mass effects. Accordingly, isotopes have been widely studied in many fields such as geochemistry, agriculture, medicine, and thermal science.
On the one hand, isotope effects have for decades been studied endlessly in two of the three basic heat transfer modes, heat conduction and heat convection. However, the effect of isotopes on a third mode of heat transfer (i.e., thermal radiation) remains to be explored. In particular, since the 60's of the 20 th century, phonon scattering was reduced due to reduced fluctuation in atomic mass, and researchers have theoretically predicted and experimentally observed the enhancement of phonon thermal conductivity by isotopic enrichment. With the intensive research on the isotope-controlled crystal growth and the continuous innovation of the technology, in recent years, researchers have measured the isotope effect of improving the thermal conductivity by more than 90% and 150% in the bulk cubic boron nitride (cBN) and silicon nanowires, respectively. In addition, in the field of thermal convection, the influence of isotopes on fluid viscosity and fluid diffusivity has been widely studied. These isotope effects are extremely advantageous in the fields relating to heat conduction and heat convection. Thermal radiation is a ubiquitous heat transfer pathway, and is vital in civilian aspects such as infrared detection; in addition, in the aspect of space exploration, heat radiation is a main channel for heat exchange between substances. However, at present, there is little research on whether isotope engineering can be used in the field of thermal radiation.
In fact, for the radiator in the thermal radiation transmission process, whether the optical phonon of the dielectric body or the plasma of the metal or the semiconductor, the frequency and the broadening are the key characteristic parameters for determining the radiation heat flow, and the isotope quality effect mainly influences the key characteristic parameters by changing the lattice structure and the lattice dynamics, so that the potential and the extremely strong influence and the wide application space are realized.
In the second aspect, the existing method for regulating and controlling the heat radiation into the magnitude-order lifting capacity is mostly limited to the field of near-field heat radiation. However, the near-field thermal radiation has a limited application range, the control requirement on the distance between the radiators is extremely high in application, the performance of thermal radiation regulation and control can be greatly weakened by a small distance difference, the robustness is weak, and the application range is narrow.
In the third aspect, although the scholars make a lot of efforts on thermal radiation regulation at present, the thermal radiation transfer capacity obtained through parametric research and design is greatly improved, most optimized parameters are too ideal and lack of physical feasibility. Because the material can not accurately reach the designed physical properties in the preparation process, for example, the heat radiation transfer capability can be greatly influenced by different isotope proportions, different thicknesses and the like of the material, the ideal parameter design can not reach the target performance in practical application far away, and the development of related devices is limited.
Disclosure of Invention
The invention aims to provide a device and a method for regulating and controlling heat radiation based on isotope engineering.
To this end, in a first aspect, the present invention provides a method for regulating and controlling a radiation heat transfer coefficient of a radiation heat flow modulation device, including providing a radiation heat flow modulation device, where the radiation heat flow modulation device includes a first radiator and a second radiator that are oppositely disposed; wherein the first radiator comprises a first material comprising a first element; the second radiator comprises a second material, and the second material comprises a second element; wherein for at least one of the first and second materials, surface polariton excitation is supported;
the regulation and control method comprises the following steps: the radiation heat transfer coefficient of the radiation heat flow modulation device is regulated and controlled by regulating the isotope abundance ratio in the first element and/or regulating the isotope abundance ratio in the second element.
The surface polariton may be a surface phonon polariton or a surface plasmon polariton. In the technical scheme of the invention, the surface polariton of the radiator at least at one side can be thermally excited.
In order to uniformly describe the commonality of the polaritons in the invention, the characteristic frequency omega of equivalent plasma polaritons is introduced p ，
Wherein epsilon ∞ Is a high frequency dielectric constant, ω TO And ω LO Respectively a transverse optical phonon frequency and a longitudinal optical phonon frequency of a gamma point of a first Brillouin zone of the material; omega TO And omega TO Proportional to the relative change in the reciprocal of the reduced mass μ of the material, which can be expressed as:
for a material (AB) consisting of two elements (a and B), the reduced mass μ is determined by the total mass of the individual elements:
is the average atomic mass.
Wherein, at least one of the first material and the second material is designed by isotope engineering, and the heat flow regulation and control capacity (namely isotope effect eta) is more than 1000;
wherein,
h max maximum radiative heat transfer coefficient, h, for different isotopic abundance ratios min Is the minimum radiative heat transfer coefficient at different isotopic abundance ratios.
According to the technical scheme of the invention, the adjustment of the radiation heat transfer coefficient of the radiation heat flow modulation device can be realized by adjusting the isotope abundance ratio in at least one element in at least one radiator material in the radiation heat flow modulation device.
The method for regulating and controlling the abundance ratio of different isotopes can be realized by controlling the conditions of precursors with different isotope ratios, different source furnace ion beam flow rates, temperature and the like in the growth of a radiator material, and can also be realized by a method of ion implantation and annealing treatment after the growth of the material is finished.
According to the technical scheme of the invention, the isotope is a stable isotope. As known to those skilled in the art, a stable isotope refers to an isotope that is not radioactive or has a radioactive half-life of greater than 1015 years.
In some embodiments, the first material and the second material are each independently selected from a polar dielectric, a metal, an intrinsic semiconductor, a doped semiconductor.
In some embodiments, the first material and the second material are each independently selected from the group consisting of: hydride dielectrics, e.g. lithium hydride (H), (C) 6 LiH), lithium deuteride (II) 6 LiD), lithium tritide ( 7 LiT); boride dielectrics such as cubic boron nitride, hexagonal boron nitride; comprising two or more alloys selected from the group consisting of: zinc, gallium, selenium, indium, tin, tellurium, e.g. In 1-x Ga x As、GaAs 1-x-y N x Bi y 、Cu 2 ZnSnS 4 And the like.
In some embodiments, the first element and the second element are each independently selected from hydrogen, lithium, boron, carbon, nitrogen, oxygen, silicon, calcium, titanium, iron, nickel, copper, zinc, gallium, germanium, selenium, silver, indium, tin, antimony, tellurium.
In some embodiments of the present invention, the substrate is, the first material and the the second material is lithium hydride ( 6 LiH); the ratio of H/D isotopes of hydrogen elements in the lithium hydride in the first material and/or the ratio of H/D isotopes of hydrogen elements in the lithium hydride in the second material are/is adjusted, so that the radiation heat transfer coefficient of the radiation heat flow modulation device is adjusted and controlled.
In some embodiments, a vacuum is provided between the first radiator and the second radiator.
According to the technical scheme of the invention, the vacuum space between the first radiator and the second radiator is not limited to the micro-nano level, and the method is also suitable for the macro-scale.
In some embodiments, the radiation structure of the first radiator and the second radiator is selected from the group consisting of: plate-plate, ball-plate; the thickness of the flat plate is less than 10 μm.
In some embodiments, the first radiator and the second radiator are the same thickness.
In some embodiments, the first radiator and the second radiator are radiators with grating and/or super-surface structures.
According to the technical scheme of the present invention, the radiation heat flow modulation device at least includes the first radiator and the second radiator, or may include a greater number of radiators, and a person skilled in the art may select the radiators according to a usage scenario.
According to the technical scheme of the invention, the sizes of the first radiator and the second radiator can be selected according to actual requirements on the premise of processing feasibility; the thicknesses of the first radiator and the second radiator are preferably in the order of micro-nano magnitude.
In some embodiments, the thickness of the first radiator and the second radiator is selected to be 1 nm.
In some embodiments, the radiant heat flux modulating device wherein the first material and the second material have the same molecular formula and the first element and the second element are of the same elemental species.
In some embodiments, the method of modulating increases the radiant heat transfer coefficient of the radiant heat flow modulating device, the method of modulating comprising:
adjusting the isotopic abundance ratio in the first element: allowing the first element to comprise a first isotope and a second isotope, the mass number of the first isotope being greater than the mass number of the second isotope; and adjusting the atomic number ratio of lighter isotopes in the variable isotope material of the first isotope and the second isotope, so that the reduced mass of the first radiator is increased (or decreased), and the characteristic frequency is red-shifted (or blue-shifted).
Adjusting the isotopic abundance ratio in the second element: causing the second element to include a third isotope and a fourth isotope, the third isotope having a mass number greater than the mass number of the fourth isotope; and adjusting the atomic number ratio of the third isotope to the fourth isotope to increase (or decrease) the reduced mass of the second radiator, red-shift (or blue-shift) the characteristic frequency and make the characteristic frequency close to (or far away from) the first radiator.
In some embodiments, the method of modulating increases the radiant heat transfer coefficient of the radiant heat flow modulating device, the method of modulating comprising: adjusting the atomic number ratio of the first isotope to the second isotope to enable the absolute value of the difference value of the atomic number ratio of the first isotope to the second isotope to be 0; and/or adjusting the atomic number ratio of the third isotope to the fourth isotope to make the absolute value of the difference of the atomic number ratio of the third isotope to the fourth isotope 0; the characteristic frequencies of the first radiator and the second radiator are made to coincide (match).
In some embodiments, the method of modulating reduces the radiant heat transfer coefficient of the radiant heat flow modulating device, the method of modulating comprising:
adjusting the isotopic abundance ratio in the first element: causing the first element to comprise a first isotope and a second isotope, the first isotope having a mass number greater than the mass number of the second isotope; adjusting the atomic number ratio of the first isotope to the second isotope, and increasing the absolute value of the difference between the atomic number ratios of the first isotope and the second isotope to 100%; and/or the presence of a gas in the atmosphere,
adjusting the isotopic abundance ratio in the second element: enabling the second element to comprise a third isotope and a fourth isotope, wherein the mass number of the third isotope is larger than that of the fourth isotope, and the absolute value of the difference of the atomic number ratio of the third isotope to the fourth isotope is 0; (ii) a Adjusting the atomic number ratio of the third isotope to the fourth isotope to make the absolute value of the difference of the atomic number ratio of the third isotope to the fourth isotope 100%; the absolute values of the characteristic frequencies of the two radiators differ the most (mismatch).
In some embodiments, the first element is the same element species as the second element.
In some embodiments, the first isotope is the largest mass number isotope and the second isotope is the smallest mass number isotope of all isotopes in which the first element is present; and/or, among all isotopes existing in the second element, the third isotope is the isotope with the largest mass number, and the fourth isotope is the isotope with the smallest mass number.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) The present invention has been developed for the first time for isotope effects in the field of thermal radiation, revealing the great influence of isotopes on the third mode of heat transfer (i.e. thermal radiation). The invention utilizes the characteristic that the isotope can change the frequency and the peak width of the optical phonon or the plasma of the material so as to change the dielectric property and the local electromagnetic density of the material, realizes the matching and the mismatching of the characteristic peak of the local electromagnetic density under different isotope proportions of the isotope of the radiator material, can enhance and inhibit the heat radiation transfer, and realizes the heat radiation regulation and control of more than four orders of magnitude among the radiators.
(2) The invention utilizes the heat radiation heat exchange principle, is not limited to near-field heat radiation or far-field heat radiation, can realize the heat radiation regulation and control capability exceeding four orders of magnitude in both the near-field range and the far-field range, embodies the flexibility of the application scene of the invention, and greatly expands the application space and range of the invention.
(3) The invention can flexibly select the target isotope ratio growth material according to the practical application condition by considering the corresponding material physical property in the practical parameter range between the radiators so as to achieve the target characteristic parameters and realize the maximum or minimum heat radiation transmission between the radiators. In addition, the device and the method for regulating and controlling the heat radiation based on the isotope engineering are feasible, and the heat radiation regulation and control of several orders of magnitude can be realized even if the control of the characteristic dimension or the distance between the radiating bodies is 1 order of magnitude different from the target dimension in the growth of the material. The robustness and the wide applicability of the device and the method for regulating and controlling the heat radiation based on the isotope engineering are explained.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. In the drawings:
FIG. 1 is a schematic structural diagram and a schematic diagram of an apparatus and a method for regulating thermal radiation based on isotope engineering;
FIG. 2 is a plot of the optical phonon of the first Brillouin zone F-point of lithium hydride as a function of reduced mass;
FIG. 3 is the effect of the isotope ratio variation on the real and imaginary parts of the dielectric constant of lithium hydride in example 1;
FIG. 4 is a graph showing the effect of isotope ratio variation on the electromagnetic local state density (LDOS) at 100nm on the surface of bulk lithium hydride in example 1;
FIG. 5 is the variation of the radiation heat transfer coefficient and the isotope effect with the spacing for the symmetrical material combinations with different isotope ratios in example 1;
FIG. 6 is the variation of the radiation heat transfer coefficient and the isotope effect with the spacing of the asymmetric material combination with different isotope ratios in example 2;
FIG. 7 is a graph showing the isotope effect as a function of the thickness of a thin lithium hydride film and the size of the radiator gap in example 3;
fig. 8 shows the change of the isotope effect of the radiator material in example 4 at different temperatures according to the reduced mass caused by different characteristic frequencies and isotopes of the surface wave.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In order to achieve the purpose of greatly regulating and controlling the heat radiation in the range from micro-nano scale to macro-scale, the invention provides a device and a method capable of regulating and controlling the heat radiation in four orders of magnitude based on isotope engineering after researching the isotope effect in the field of heat radiation. The physical mechanism by which it works is briefly explained here:
due to different isotope ratios, the mass of the crystal changes along with the isotope ratios, and the mass distribution also changes correspondingly, so that the vibration characteristics of the crystal lattice are influenced, and the response capability (namely the dielectric function) of the crystal to the change of an external electromagnetic field is further influenced. Taking a typical polar dielectric material XY as an example, the relationship between the optical phonon and the dielectric function of the first Brillouin zone F point can be described by a Lorentz dipole model:
wherein in the formula ∈ ∞ Is a high frequency dielectric constant, gamma is a damping factor, omega TO And omega LO Respectively, the transverse optical phonon frequency and the longitudinal optical phonon frequency at the Γ point of the first brillouin zone of the material.
If X has two isotopes, X' and X ", respectively. Transverse optical phonon omega in material TO And longitudinal optical phonon omega LO Is closely related to its reduced mass. With X in XY 2 The characteristic oscillation frequency of the optical phonon increases along with the increase of the square root of the reciprocal of the XY reduced mass, which is expressed as:
wherein, X f Is the molecular formula XY consisting of X' in a ratio f 1 Is XY crystal having a purity of 100%.
Is the reciprocal of the approximate mass mu of the material XY,
is the average mass of the atoms, f i Is a proportion of a certain isotope.
When the heavy isotope is replaced with the light isotope, the optical phonon frequency of the region center Γ point of the first brillouin zone increases. Since these phonons are collective oscillations of atoms generated by specific arrangements and chemical bonds, similar to the mass-spring oscillator model, the bonding strength between atoms is altered by the lighter mass of the constituent atoms. Meanwhile, phonons may undergo multiple scattering such as phonon-phonon scattering, boundary scattering, and isotope-phonon scattering. In crystals composed of different isotopes, the crystal anharmony is enhanced and the phonon linewidth is broadened due to the more chaotic mass distribution. Generally, the phonon lifetime of an equal-proportion mixed crystal is most severely limited by phonon isotope scattering and can be estimated using the mass fluctuation parameter given by Slack:
(reference, G.A. Slack, effect of Isotips on Low-Temperature Thermal Conductivity [ J ], physical Review 105,1957, 829)
Wherein,
is a mass fluctuation parameter of a single element. If the isotope of Y is not considered, then X consisting of X 'and X' mixed in equal proportions 0.5 Y shows the strongest mass disorder, and the damping factor gamma of the Lorentz oscillator model reaches the maximum value because the damping coefficient gamma is inversely proportional to the phonon life.
According to the theorem of fluctuation dissipation, the dielectric response of a material determines the radiation performance of the material. When an incident photon couples with the lattice vibration, a surface wave occurs in a frequency band where the dielectric constant is negative, including: surface phonon polaritons (SPhPs, polar dielectric support) or surface plasmon polaritons (SPPs, metal or doped semiconductor support). Based on wave electrodynamics, the emissivity between two infinitely large parallel planar radiators can be expressed as:
the radiative heat transfer coefficient is only equal to the s-and p-polarized transmission coefficients tau at a given radiator temperature and spacing distance s (ω,k)、τ p (ω, k) are the main terms of phonon frequency shift and broadening effects caused by isotopes.
Once the surface wave can be thermally excited, if the radiation emitter is close to the radiation receiver, the thermal radiation will be significantly enhanced due to photon tunneling effect, quasi-monochromatically, several orders of magnitude beyond the blackbody radiation limit. On the other hand, even if the radiation emitter is far away from the radiation receiver, the surface wave no longer plays a dominant role, and at the moment, the energy dissipation of the electromagnetic field in the film in the far field can be controlled by controlling the frequency and the broadening of the optical phonon, which is embodied as a main contribution of a leakage mode represented by a Berleman mode, so that the heat radiation is efficiently regulated and controlled. Therefore, the invention can control the electromagnetic field energy loss of the material surface wave and the far field by the influence of the isotope on the optical phonon frequency and the broadening, and provides a method and a device for regulating and controlling the heat radiation based on isotope engineering.
By researching the isotope effect in the field of thermal radiation, the invention utilizes the isotope to change the frequency and peak width of optical phonon or plasma of the material, thereby changing the characteristics of dielectric property and local electromagnetic density of state of the material; by matching and mismatching the local electromagnetic density among the characteristic peak radiators and not limiting the distance among the radiators, on one hand, the radiation and heat transfer performance among the same materials can be enhanced by one order of magnitude or more; on the other hand, the principle of isotope effect in the invention can be utilized to realize the reduction of the radiation heat transfer performance among the same materials by four orders of magnitude, as shown in the schematic diagram of fig. 1.
Specifically, a polar dielectric material or a metal material which has two or more isotope compositions and supports surface wave excitation can be selected as one of the radiators, the frequency shift and the broadening effect of optical phonons or plasmas in the selected radiator material along with the abundance of a certain specific isotope in the material are realized according to the frequency and the peak width of optical phonons or plasmas in the selected radiator material, the isotopic proportion in different materials is realized through isotope engineering, the reduced mass of the material is changed, the resonance frequency of the surface optical phonons of the material is controlled, the matching and the mismatching of the local electromagnetic density of states of the material are realized, and the opening and the suppression of a radiation heat flow channel are realized. Meanwhile, mode contributions of a non-surface wave section (a near field: frustrated mode brought by frustrated total internal reflection; a far field: interference mode in a Fabry-Perot cavity brought by a thin film material) can be suppressed by controlling the size of the radiator, so that the regulation and control of radiation heat flow of more than four orders of magnitude are realized.
In some embodiments, the radiant heat transfer coefficient is modulated for a radiant heat flow modulation device comprising a first radiator and a second radiator having a parallel plate-to-plate configuration. If the heat radiation between the radiators needs to be enhanced, the molecular formulas and the isotope ratios of the materials of the two radiators are the same through regulation, and the isotope ratios with the largest mass fluctuation are selected, namely, the isotope with the smallest mass number and the isotope with the largest mass number respectively account for 50% in the variable isotope elements of the materials.
In some embodiments, the radiant heat transfer coefficient is modulated for a radiant heat flow modulation device comprising a first radiator and a second radiator having a parallel plate-to-plate configuration. If the heat radiation between the weak radiators is needed, the molecular formulas of the two heat radiation flat plate materials are the same and the isotope ratios are different through regulation and control. The variable isotope element in one radiator material consists of 100% of the smallest mass number isotope, and the same variable isotope element in the other radiator material consists of 100% of the largest mass number isotope.
In the following, the present invention will be described with reference to the embodiments and the foregoing physical mechanisms to describe specific implementations of the apparatus and method for regulating thermal radiation based on isotope engineering.
In the present invention, unless otherwise specified, d represents the spacing between radiators, f represents the proportion of a particular isotope in the material to all of the elements, and the proportion of the isotope in an element refers to the proportion of the number of lighter-weight isotopes in the material of variable isotopes.
Example 1
Providing a radiation heat flow modulation device, which consists of a first radiator and a second radiator which are oppositely arranged, wherein the first radiator and the second radiator are both of flat plate structures and are both semi-infinite blocks relative to a vacuum space, and the space is 100nm; the first radiator and the second radiator are both made of lithium hydride; the temperature T is set to 300K. The embodiment adjusts the radiation heat transfer coefficient by changing the isotope ratio of lithium and hydrogen elements in lithium hydride.
Lithium hydride is a polar dielectric material that supports excitation of surface phonon polariton, a property that can greatly enhance heat radiation. The lithium element has 6 Li and 7 two stable isotopes of Li, the hydrogen element having 1 H、 2 D and 3 t three isotopes, however 3 T is a radioactive element. However, in this embodiment, we only consider realistic feasibility 1 H and 2 and D, two stable isotopes. Lithium element in lithium hydride as radiator material 6 Li and 7 li composition wherein 6 The ratio of Li in lithium element is f 1 H is present in the hydrogen element in a ratio of f 2 Will have a difference of f 1 And f 2 The values of lithium hydride are shown below: 6 LiH(f 1 ＝100％,f 2 ＝100％)， 6 LiD(f 1 ＝100％,f 2 ＝0)， 6 Li eq H(f 1 ＝100％,f 2 ＝50％)， 7 LiH(f 1 ＝0,f 2 ＝100％)， 7 LiD(f 1 ＝0,f 2 ＝0)， 7 Li eq H(f 1 ＝0,f 2 ＝50％)。
first, the influence of isotopes on the optical phonons of the first Brillouin zone F-point of lithium hydride was investigated, the phonon frequency being related to the minus half power μ of the reduced mass for compositions of different isotopic abundance -0.5 The results are shown in FIG. 2. Shadow shown in FIG. 2In response, substituting the lorentz dipole model, the real and imaginary parts of the dielectric constants of six typical lithium hydrides are shown in fig. 3 (left) and fig. 3 (right).
The density of electromagnetic local states at 100nm height above the surface of six semi-infinite lithium hydrides is shown in figure 4. Since the electromagnetic local density of states of the material can represent the strength of the radiation capability of the material, the size of the radiation capability of a single radiator can be significantly influenced by controlling the isotope ratio of lithium and hydrogen elements in lithium hydride. The more light isotopes in the material, the more the radiation capability of the material shifts to high frequencies. It has also been found that the absolute value of the difference decreases with the ratio of different isotopes (i.e. | f |) 1 -f 2 Decreased), i.e. the mass fluctuation in the material increases, the phonon broadening of the material will result in a decrease of the peak value of the local density of states, which also affects the radiation capability of the radiator.
For the purification of 6 The heat radiation regulation and control device composed of Li considers three symmetrical structure heat radiation regulation and control devices with typical different isotopic abundance, which are respectively 6 LiH- 6 LiH、 6 Li eq H- 6 Li eq H and 6 LiD- 6 and (8) LiD. Wherein, two sides of "-" respectively show the materials of the first radiator and the second radiator in the thermal radiation regulating device. The variation of the radiation heat transfer coefficient and the isotope effect of the three thermal radiation regulation devices with the spacing is shown in fig. 5. According to the result of figure 5 it is shown that, 6 LiH- 6 the LiH radiative heat transfer coefficient is the smallest, 6 Li eq H- 6 Li eq h has the largest radiative heat transfer coefficient of 6 LiH- 6 2.4 times of LiH.
For the purification of 1 The heat radiation regulation and control device composed of H considers three symmetrical structure heat radiation regulation and control devices with typical different isotope abundances, which are respectively 7 LiH- 7 LiH、 eq LiH- eq LiH and 7 LiD- 7 and (8) LiD. The variation of the heat transfer coefficient and isotope effect with the spacing of the three thermal radiation control devices is also shown in fig. 6. According to the result of figure 5 it is shown that, 7 LiH- 7 the LiH radiative heat transfer coefficient is the smallest, 7 Li eq H- 7 Li eq h has the largest radiative heat transfer coefficient of 7 LiH- 7 0.73 times LiH.
According to the technical scheme provided by the invention, 6 Li eq H- 6 Li eq h relative to the other two heat radiation means: ( 6 LiH- 6 LiH and 6 LiD- 6 LiD, in each of the two radiators, the absolute value of the difference between the H and D ratios in the hydrogen element is 100% -0% | = 100%), and the heat radiation device is prepared by reducing the difference between the H and D ratios in the hydrogen element 6 Li eq H- 6 Li eq H (the absolute value of the difference between the ratios of H and D in hydrogen in the two radiators is |50% -50% | = 0%), the radiation heat transfer coefficient of the device is obviously improved, and the radiation heat transfer coefficient mainly comes from the broadening effect of isotopes related to material mass fluctuation.
In the same way, the method has the advantages of, eq LiH- eq LiH relative to the other two heat radiation means: ( 7 LiH- 7 LiH and 7 LiD- 7 LiD, of which the two radiators are each of lithium 6 Li and 7 the absolute value of the difference in Li fraction is 100% -0% | = 100%), by reducing the content of Li in Li element 6 Li and 7 the heat radiation device is prepared by the difference of the Li proportion eq LiH- eq LiH (in each of its two radiators, of lithium element 6 Li and 7 the absolute value of the difference of the Li proportion is |50% -50% | = 0%), and the radiation heat transfer coefficient of the device is obviously improved.
Example 2
Providing a radiation heat flow modulation device, which consists of a first radiator and a second radiator which are oppositely arranged, wherein the first radiator and the second radiator are both of flat plate structures, and both are semi-infinite blocks relative to a vacuum space, and the space is 100nm; the first radiator and the second radiator are made of lithium hydride; the temperature T was set to 300K. Unlike embodiment 1, this embodiment mainly considers the asymmetric condition that the two radiators have different element compositions, and a radiator material is fixed as the fixed radiator 6 LiH (i.e. f) 1 = 100%) by changing another isotopically engineered lithium hydride: ( 6 Li eng H) Middle hydrogen unitThe ratio of H/D of the elemental isotope is used for adjusting the radiation heat transfer coefficient.
For simplicity of presentation, will have different H/D ratios 6 Li eng H represents as follows: liH 100% of H, li eq H is 50% of H, and LiD is 0% of H. The three heat radiation regulation and control devices with different isotopic abundances are respectively LiH-LiH and LiH-Li eq H and LiH-Li eq D. Wherein, two sides of "-" respectively show the materials of the first radiator and the second radiator in the thermal radiation regulation device.
The variation of the radiation heat transfer coefficient and the isotope effect with the distance of the three radiation heat flow modulation devices is shown in fig. 7. The radiation heat transfer coefficient of LiH-LiH is the largest under the vacuum space of 1nm and is LiH-Li eq 57.5 times of D.
According to the technical scheme provided by the invention, relative to a heat radiation regulation and control device LiH-LiH (in each of two radiators, the proportion of H is greater than that of D), the heat radiation regulation and control device LiH-Li is prepared by adjusting the difference value of the proportions of H and D in lithium hydride eq D (in the first radiator, the absolute value of the difference between the H ratio and the D ratio is 100% and in the second radiator, the absolute value of the difference between the D ratio and the H ratio is 100%). It can be seen that the radiative heat transfer coefficient is reduced by an order of magnitude using isotopic engineering.
Example 3
Providing a radiation heat flow modulation device, which consists of a first radiator and a second radiator which are oppositely arranged, wherein the first radiator and the second radiator are both of thin film structures; the first radiator and the second radiator are made of lithium hydride; the temperature T was set to 300K. This example demonstrates that, based on example 2, for the radiators with thin film structures, when the distances between the first radiator and the second radiator are different, the isotope ratio of the hydrogen element in LiH can be changed to adjust the isotope effect, thereby adjusting the radiative heat transfer coefficient.
The two types of heat radiation regulating and controlling devices with different hydrogen isotope abundance compositions are LiD-LiD and LiH-LiD respectively. Wherein, two sides of "-" respectively show the materials of the first radiator and the second radiator in the thermal radiation regulation device.
The radiator in this embodiment is a thin film structure, and on the one hand, unlike embodiment 1 in which the frustrated mode due to frustrated total internal reflection is dominant in the entire spectrum, the size of the radiator material is reduced, which can be obtained from the local electromagnetic density of states (LDOS) characteristic in fig. 4, and the LDOS of the thin film material outside the frequency band range of the surface wave is greatly reduced, which is closer to the characteristic of vacuum. At this point, the contribution of SPhPs coupling between the films gradually replaces frustrated mode dominant radiative heat flow. Under the condition of narrow LDOS distribution, even if the frequency shift caused by the change of isotope ratio is very small, SPhPs coupling can be mismatched greatly, and the transmission probability of asymmetric material combination is greatly reduced.
On the other hand, unlike the single dispersion relationship that bulk materials form at the bulk-vacuum interface, thin films can be split into two dispersion relationships of symmetric and antisymmetric modes by interlayer SPhPs coupling.
When the first radiator and the second radiator are spaced at a very near field vacuum spacing (e.g., 1 nm), the split dispersion relation may merge into a single dispersion relation formed at the bulk-vacuum interface where separation of the large wave vectors is supported, at which point the heat radiation characteristics of example 1 may be recovered.
When the distance between the first radiator and the second radiator is further increased (for example, 1 μm), the two spips modes that are split are difficult to combine due to the insufficient size of the wave vector supported in the vacuum distance, and the two modes are respectively divided into two main contributions located near the frequencies of the two optical phonons through the coupling of the radiators, so that the mismatch of the thermal radiation transmission channel is stronger, that is, the isotope effect is larger.
Fig. 7 shows the variation of the isotope effect with the thickness of the radiator material, at a pitch representing the near-field thermal radiation range, and the far-field thermal radiation. Specifically, the method is described. Example 3 compares the case of 1nm, 10nm, 100nm, 1 μm and semi-infinite bulk.
As can be seen from fig. 7, the maximum isotope effect obtained for the 1nm LiH thin film can be two orders of magnitude greater than that of the bulk LiH, i.e., the emissivity can be reduced by three orders of magnitude through isotope engineering. The magnetic shoe shows that the spacing interval of the huge isotope effect is in the range of hundred nanometers, which brings new radiation regulation and control possibility for experiments and devices in the order of hundred nanometers. Meanwhile, in order to achieve a more significant isotope effect, the flat plate should be less than 10 μm.
The above results show that the isotope effect at different vacuum gap sizes is not monotonous but fluctuates within a certain range due to the trade-off variation between different dominant modes. For the near-field heat radiation, the reason is that the frustration mode gradually covers the contribution of the SPhPs mode due to the increase of the thickness of the radiator; for far-field thermal radiation, this is because interference patterns gradually replace the strong absorption of electromagnetic field energy by optical phonons via leakage-like patterns.
The present embodiment also proves that, for the radiator with the thin film structure, when the distance between the first radiator and the second radiator is different, the isotope effect can be adjusted by changing the proportion of the isotope in the radiator material, so as to adjust the radiation heat transfer coefficient.
Example 4
In order to further explain the radiator material to which the technical scheme of the present invention can be applied, the present embodiment extracts common characteristics of different materials supporting a surface wave, and utilizes a lorentz-durude model to effectively represent a characteristic frequency of the surface wave by using an equivalent plasma frequency, thereby analyzing and obtaining specific influences of two most important parameters on radiation heat flow regulation and control in isotope engineering. The method comprises the following specific steps:
the lorentz-durude model can be expressed as:
the surface equivalent plasma frequency of the material is
When ω is TO Lorentz-Duru when =0The de model can be simplified to a durude model. For simplicity, this example utilizes the LST relationship based on the physical parameters of lithium hydride
Suppose ε ∞ ＝1，ε 0 =0, and Γ is fixed to 2cm -1 R = ω LO /ω TO Fixed at 1.8, then have
When the two radiators are in a parallel flat plate structure, the average temperature is 300K, the vacuum space between the two radiators is 100nm, and the radiators are films with the thickness of 1 nm. In this case, the present example clearly reveals the change in reduced mass of the material due to isotopic variations
The larger the isotope effect, the larger this rule, as shown in fig. 8.
According to FIG. 8, at 300K, when Ω p Frequency greater than near infrared region (omega) p >9000cm -1 ) The isotope effect is less than 1, corresponding to the condition that the surface wave of the material can not be excited, and under the condition, the radiation heat flow can not be effectively regulated and controlled by isotope engineering by using the technical scheme provided by the invention.
This embodiment is further focused on the temperature dependence of the excitation due to the material surface wave. Within the equivalent plasma frequency range that the radiation heat flow can be effectively regulated and controlled under 300K, an optimal omega exists p (i.e. omega) p,opt ) Its isotopic effect is the greatest. At omega p,opt At the frequency, the maximum isotope effect occurs mainly due to the result of the maximum difference in surface wave coupling between the radiator combination with the same isotope ratio on both sides and the radiator combination with different isotope ratio on both sides of the material in the near-field thermal radiation distance range. Further, since the temperature will affect the excitation of the surface wave, the optimum material resonant frequency Ω will be maintained at different temperatures while other conditions are kept constant p,opt The value will also beDifferent. For example, at 300K, Ω p,opt About 2800cm -1 At 50K, Ω p,opt About 500cm -1 。
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A method for regulating and controlling the radiation heat transfer coefficient of a radiation heat flow modulation device is characterized by comprising the steps of providing the radiation heat flow modulation device, wherein the radiation heat flow modulation device comprises a first radiator and a second radiator which are oppositely arranged; wherein the first radiator comprises a first material comprising a first element; the second radiator comprises a second material comprising a second element; wherein for at least one of the first and second materials, surface polariton excitation is supported;
the regulation and control method comprises the following steps: by adjusting the ratio of the isotopic abundance in the first element, and/or adjusting the ratio of the isotopic abundance in the second element; and then the radiation heat flow modulation device based on isotope engineering regulation is prepared.
2. A method of conditioning as recited in claim 1, wherein said first material and said second material are each independently selected from the group consisting of a polar dielectric, a metal, an intrinsic semiconductor, a doped semiconductor.
3. A method of regulating according to claim 1, wherein the first material and the second material are each independently selected from the group consisting of: hydride dielectric, boride dielectric, alloys; the alloy includes two or more selected from the group consisting of: zinc, gallium, selenium, indium, tin, tellurium.
4. The method of claim 1, wherein the first element and the second element are each independently selected from the group consisting of hydrogen, lithium, boron, carbon, nitrogen, oxygen, silicon, calcium, titanium, iron, nickel, copper, zinc, gallium, germanium, selenium, silver, indium, tin, antimony, and tellurium.
5. The method for controlling according to claim 1, wherein a vacuum is applied between the first radiator and the second radiator;
preferably, the radiation structure of the first radiator and the second radiator is selected from the group consisting of: plate-plate, ball-plate; the thickness of the flat plate is less than 10 μm;
preferably, the thicknesses of the first radiator and the second radiator are the same;
preferably, the first radiator and the second radiator are radiators with grating and/or super-surface structures.
6. A method of regulating and controlling according to claim 1, wherein the radiant heat flow regulating device comprises a first material having the same molecular formula as the second material, and wherein the first element is of the same elemental species as the second element.
7. A control method according to any one of claims 1 to 6, wherein the control method increases the radiant heat transfer coefficient of the radiant heat flow modulating device, the control method comprising:
adjusting the ratio of a first isotope to a second isotope of the first element in the first radiator, the mass number of the first isotope being greater than the relative atomic mass of the second isotope; adjusting the ratio of the number of molecules of the first isotope to the number of molecules of the second isotope to increase the reduced mass of the first radiator and red shift the characteristic frequency,
adjusting a ratio of a third isotope to a fourth isotope of the second element in the second radiator, the third isotope having a mass number greater than a relative atomic mass of the fourth isotope; and adjusting the ratio of the number of the third isotope to the number of the fourth isotope to increase the reduced mass of the second radiator, and redshifting the characteristic frequency to make the characteristic frequency close to the first radiator.
8. A control method according to any one of claims 1 to 6, wherein the control method reduces the radiant heat transfer coefficient of the radiant heat flow modulating device, the control method comprising:
adjusting the ratio of a first isotope to a second isotope of the first element in the first radiator, the mass number of the first isotope being greater than the relative atomic mass of the second isotope; adjusting the ratio of the number of molecules of the first isotope to the number of molecules of the second isotope to reduce the reduced mass of the first radiator and blue shift the characteristic frequency,
adjusting a ratio of a third isotope to a fourth isotope of the second element in the second radiator, the third isotope having a mass number greater than a relative atomic mass of the fourth isotope; and adjusting the ratio of the number of the third isotope to the number of the fourth isotope to reduce the reduced mass of the second radiator, blue-shifting the characteristic frequency and keeping the characteristic frequency away from the first radiator.
9. A method of regulating according to any one of claims 1 to 6, wherein the method of regulating the isotopic abundance ratio is carried out by a method selected from the group consisting of: controlling precursors with different isotope proportions in the growth of the radiator material, adopting different ion beam flow rates and/or temperatures of a source furnace, and carrying out ion implantation and annealing treatment after the growth of the material is finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211247799.5A CN115752061B (en) | 2022-10-12 | 2022-10-12 | Device and method for regulating and controlling heat radiation based on isotope engineering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211247799.5A CN115752061B (en) | 2022-10-12 | 2022-10-12 | Device and method for regulating and controlling heat radiation based on isotope engineering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115752061A true CN115752061A (en) | 2023-03-07 |
| CN115752061B CN115752061B (en) | 2023-08-18 |
Family
ID=85351244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211247799.5A Active CN115752061B (en) | 2022-10-12 | 2022-10-12 | Device and method for regulating and controlling heat radiation based on isotope engineering |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115752061B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201338226A (en) * | 2012-01-20 | 2013-09-16 | Yao Cheng | Magneto-electric effect material and its manufacturing method |
| CN109405625A (en) * | 2018-09-11 | 2019-03-01 | 上海交通大学 | Near field thermal radiation system and preparation method thereof |
| CN112794719A (en) * | 2021-01-05 | 2021-05-14 | 中国科学院上海硅酸盐研究所 | Normal pressure sintered anti-irradiation silicon carbide ceramic material and preparation method thereof |
| CN114877741A (en) * | 2022-05-12 | 2022-08-09 | 苏州大学 | Heat flow regulation and control device based on near-field thermal radiation |
| CN114975179A (en) * | 2022-05-23 | 2022-08-30 | 清华大学 | Radiation heat flow regulation and control device based on semiconductor micro-nano array structure and application thereof |
-
2022
- 2022-10-12 CN CN202211247799.5A patent/CN115752061B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201338226A (en) * | 2012-01-20 | 2013-09-16 | Yao Cheng | Magneto-electric effect material and its manufacturing method |
| CN109405625A (en) * | 2018-09-11 | 2019-03-01 | 上海交通大学 | Near field thermal radiation system and preparation method thereof |
| CN112794719A (en) * | 2021-01-05 | 2021-05-14 | 中国科学院上海硅酸盐研究所 | Normal pressure sintered anti-irradiation silicon carbide ceramic material and preparation method thereof |
| CN114877741A (en) * | 2022-05-12 | 2022-08-09 | 苏州大学 | Heat flow regulation and control device based on near-field thermal radiation |
| CN114975179A (en) * | 2022-05-23 | 2022-08-30 | 清华大学 | Radiation heat flow regulation and control device based on semiconductor micro-nano array structure and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115752061B (en) | 2023-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Altintas et al. | Highly Stable, Near‐Unity Efficiency Atomically Flat Semiconductor Nanocrystals of CdSe/ZnS Hetero‐Nanoplatelets Enabled by ZnS‐Shell Hot‐Injection Growth | |
| Tang et al. | A comprehensive review on Bi2Te3‐based thin films: thermoelectrics and beyond | |
| Kim et al. | Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4 | |
| Teppe et al. | Temperature-driven massless Kane fermions in HgCdTe crystals | |
| Yeshchenko et al. | Influence of annealing conditions on size and optical properties of copper nanoparticles embedded in silica matrix | |
| Kumar et al. | Plasmonic resonance of Ag nanoclusters diffused in soda-lime glasses | |
| Steinhauer et al. | Rydberg excitons in Cu2O microcrystals grown on a silicon platform | |
| Arguirov et al. | Residual stress in Si nanocrystals embedded in a SiO2 matrix | |
| Ni et al. | Freestanding doped silicon nanocrystals synthesized by plasma | |
| Bhaktha et al. | Enhanced fluorescence from Eu3+ in low-loss silica glass-ceramic waveguides with high SnO2 content | |
| Panmand et al. | Functionality of bismuth sulfide quantum dots/wires-glass nanocomposite as an optical current sensor with enhanced Verdet constant | |
| Paulraj et al. | Analysis of neodymium rare earth element doping in PbS films for opto-electronics applications | |
| Zhang et al. | Intraband transition of HgTe nanocrystals for Long-Wave infrared detection at 12 μm | |
| Gan et al. | Size dependence of nonlinear optical absorption and refraction of Mn-doped ZnSe nanocrystals | |
| Khan et al. | Structural and optical properties of broccoli-based nanostructured ZnS films synthesized by powder vapor transport technique | |
| Yuan et al. | Pressure-engineered optical properties and emergent superconductivity in chalcopyrite semiconductor ZnSiP2 | |
| Elisa et al. | Pulsed laser deposition films based on CdSe-doped zinc aluminophosphate glass | |
| Steveler et al. | Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation | |
| CN115752061A (en) | Device and method for regulating and controlling heat radiation based on isotope engineering | |
| Molinari et al. | Effects of the amorphous-crystalline transition on the luminescence of quantum confined silicon nanoclusters | |
| Rolo et al. | Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy | |
| Khalil et al. | Exploration of the structural, optoelectronic and vibrational behavior of Sb2S3 through the first principles approach for phenomenal applications in solar cells | |
| Litvinchuk et al. | Optical properties and lattice dynamics of a novel allotrope of orthorhombic elemental germanium | |
| Rasmagin et al. | Optical properties of CdSe/ZnS nanoparticles in heat-treated polyvinylchloride films | |
| Mohamed et al. | Insight into the electronic, optical, thermodynamic, and thermoelectric properties of novel chalcogenides: An ab initio study |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |