CN115726227A - Preparation method of high-temperature-resistant wave-absorbing film - Google Patents
Preparation method of high-temperature-resistant wave-absorbing film Download PDFInfo
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- CN115726227A CN115726227A CN202211440972.3A CN202211440972A CN115726227A CN 115726227 A CN115726227 A CN 115726227A CN 202211440972 A CN202211440972 A CN 202211440972A CN 115726227 A CN115726227 A CN 115726227A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000835 fiber Substances 0.000 claims abstract description 109
- 230000002745 absorbent Effects 0.000 claims abstract description 22
- 239000002250 absorbent Substances 0.000 claims abstract description 22
- 239000011230 binding agent Substances 0.000 claims abstract description 20
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 18
- 230000005593 dissociations Effects 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000005303 weighing Methods 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 10
- 238000007731 hot pressing Methods 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000011358 absorbing material Substances 0.000 description 10
- 229920006231 aramid fiber Polymers 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a preparation method of a high-temperature-resistant wave-absorbing film, and belongs to the technical field of materials. Weighing an absorbent and wave-transmitting base material fibers, wherein the absorbent and the wave-transmitting base material fibers are both chopped fibers and are placed in a fiber dissociator; weighing a binder, and placing the binder in the fiber dissociator; setting the rotating speed and the dissociation time of the fiber dissociator, adding deionized water into the fiber dissociator, and starting the fiber dissociator to dissociate; after dissociation is finished, pouring the mixed solution in the fiber dissociator into a square paper sheet former, and starting a suction filtration program to obtain a paper sheet; and carrying out hot-pressing drying on the obtained paper sheet, and removing excessive water to obtain the high-temperature-resistant wave-absorbing film. The high-temperature-resistant wave-absorbing film prepared by the invention has good high-temperature stability.
Description
Technical Field
The invention relates to a preparation method of a high-temperature-resistant wave-absorbing film, belonging to the technical field of materials.
Background
With the demand of technical development, low detectability is the development trend of future high-speed aircrafts, and the wave-absorbing material is the most main and effective technical way for inhibiting the strong scattering of the radar under the condition that the application of the shape stealth technology is limited. The wave-absorbing film is portable, has wide application scenes, good wave-absorbing performance and adjustable dielectric property, and thus is widely concerned by researchers. Under the condition of normal temperature absorption application, the related research of the wave-absorbing film has made great progress, and for the high temperature resistant wave-absorbing field, no more mature wave-absorbing film product can be developed. Therefore, the development of the high-temperature resistant wave-absorbing film is very important for the development of high-temperature stealth technology.
Generally, the wave-absorbing material applied to a high-temperature environment can adopt a high-temperature resistant coating to protect the internal wave-absorbing material and prevent the wave-absorbing material from being corroded and oxidized by a high-temperature oxygen-containing environment, and the mode has great disadvantages: firstly, the complexity of the process is increased due to the composite design of the double-layer structure, and parameters such as mechanical property of a final product cannot be well controlled; secondly, the high-temperature resistant coating has certain dielectric parameters, which can destroy the critical conditions of the material, so that the impedance matching characteristic of the composite wave-absorbing material is poor, thereby influencing the wave-absorbing performance. Therefore, the challenge still exists in obtaining the high-performance high-temperature-resistant wave-absorbing material by adopting a better wave-absorbing material preparation scheme.
Disclosure of Invention
The invention aims to provide a preparation method of a high-temperature-resistant wave-absorbing film based on the problems of the existing high-temperature-resistant composite wave-absorbing material.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a preparation method of a high-temperature-resistant wave-absorbing film comprises the following steps:
1) Weighing an absorbent and wave-transmitting base material fibers, wherein the absorbent and the wave-transmitting base material fibers are both chopped fibers and are placed in a fiber dissociator;
2) Weighing a binder, and placing the binder in the fiber dissociator;
3) Setting the rotating speed and the dissociation time of the fiber dissociator, adding deionized water into the fiber dissociator, and starting the fiber dissociator to dissociate;
4) After dissociation is finished, pouring the mixed solution in the fiber dissociator into a square paper sheet former, and starting a suction filtration program to obtain a paper sheet;
5) And carrying out hot-pressing drying on the obtained paper sheet, and removing excessive water to obtain the high-temperature-resistant wave-absorbing film.
Preferably, the absorbent is one of tungsten core silicon carbide fiber, silicon carbide-based composite fiber, boron nitride fiber and aluminum nitride fiber.
Preferably, the wave-transparent substrate fiber is one of quartz fiber, glass fiber and alumina fiber.
Preferably, the mass ratio between the absorbent and the wave-transparent base material fiber is (1-10): 10.
Preferably, the length of the absorbent is 5-10 mm, and the length of the wave-transparent substrate fiber is 6-12 mm.
Preferably, the binder comprises one or more of fibrid, polyvinyl alcohol, polyacrylate and low-melting point polypropylene fiber.
Preferably, the mass ratio of the binder in the total amount of the absorbent, the wave-transmitting base material fiber and the binder is 5 to 15%.
Preferably, the rotating speed of the fiber dissociator is set to be 600-1000 r/min, and the dissociation time is set to be 5-15 min.
Preferably, 3 to 5L of deionized water is added to the fiber debonder.
Preferably, the temperature of the hot-pressing drying is 90-120 ℃.
Preferably, the thickness of the high-temperature resistant wave-absorbing film is 0.1-0.2 mm.
Based on the problems of the current high-temperature-resistant composite wave-absorbing material, aiming at the related application requirements, the preparation process simplicity and the dielectric property regulation feasibility of the wave-absorbing material are comprehensively considered, and the preparation method of the high-temperature-resistant wave-absorbing film is provided. The obtained high-temperature-resistant wave-absorbing film has good high-temperature stability, can withstand a high-temperature oxygen-containing environment of 800 ℃, can improve and adjust the electromagnetic parameters of the obtained high-temperature-resistant wave-absorbing film by improving the proportion content of the high-temperature-resistant wave-absorbing fibers in the wet papermaking raw materials, enhances the loss capacity of the wave-absorbing film, and provides technical support for the research of high-temperature-resistant stealth materials.
Drawings
Fig. 1 shows the dielectric constant of the high-temperature resistant wave-absorbing film prepared in example 1 in the S band.
Fig. 2 shows the dielectric constant of the high temperature resistant wave-absorbing film prepared in example 2 in the S band.
Fig. 3 shows the dielectric constant of the high temperature resistant wave-absorbing film prepared in example 3 in the S band.
Detailed Description
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
The invention discloses a preparation method of a high-temperature-resistant wave-absorbing film, which is prepared by a wet-process sheet-making process and specifically comprises the following steps:
the first step is as follows: weighing a certain amount of absorbent and wave-transparent substrate fiber, and placing the absorbent and the wave-transparent substrate fiber in a fiber dissociator.
According to some embodiments, the length of the absorbent can be selected to be 5-10 mm, and the length of the wave-transparent substrate fiber can be selected to be 6-12 mm.
According to some embodiments, the absorbent may be selected from other types of high temperature resistant, oxidation resistant chopped fibers other than chopped tungsten core silicon carbide fibers, such as silicon carbide-based composite fibers, boron nitride fibers, aluminum nitride fibers, and the like. The absorbent is chopped fibers, has typical dielectric polarization loss characteristics, and has good oxidation and corrosion resistance characteristics in a high-temperature oxygen-containing environment. The mass ratio of the absorbent in all the raw materials directly acts on the dielectric parameters of the obtained high-temperature resistant wave-absorbing film. The higher the content ratio of the absorbent, the higher the dielectric parameter of the obtained high-temperature resistant wave-absorbing film, and the stronger the loss capacity of the film.
According to some embodiments, the wave-transparent substrate fiber may also be selected from other fibers with good stability, such as glass fiber, alumina fiber, etc., besides the wave-transparent substrate fiber. The wave-transparent base material fiber has good stability in an air environment below 1200 ℃, and does not generate physical changes such as melting and other chemical reactions.
According to some embodiments, the mass ratio between the absorber and the wave-transparent substrate fiber is (1-10): 10.
The specific types and content ratios of the absorbent and the wave-transparent substrate fiber can be selected by those skilled in the art according to specific actual needs.
The second step: a quantity of binder is weighed and placed in a fiber debonder.
According to some embodiments, the binder comprises one or more of fibrid, polyvinyl alcohol, polyacrylate, low melting polypropylene fiber; the selection of the binder has less influence on the dielectric properties of the wave-absorbing film, so the compatibility between the binder and the chopped fibers is mainly considered in the selection.
According to some embodiments, the mass ratio of the binder in all raw materials (including the binder, the absorbent and the wave-transparent base material fiber) is controlled to be 5-15%, and the amount can be adjusted according to the type of the binder.
The third step: setting the rotating speed of the fiber dissociator, adding deionized water into the fiber dissociator, and starting the fiber dissociator to dissociate; the dissociation criterion is preferably a homogeneously dispersed mixed solution, on the basis of which the dissociation time can be extended or the rotational speed of the dissociator can be increased.
According to some embodiments, the fiber debonder has a rotational speed of 600 to 1000r/min.
According to some embodiments, 3 to 5L of deionized water is added to the fiber debonder.
According to some embodiments, the dissociation time is 5 to 15min.
According to some embodiments, a dispersant may be used to aid dissociation for different fiber types.
The fourth step: after dissociation is finished, pouring the mixed solution in the fiber dissociator into a square paper sheet former, and starting a suction filtration program to obtain a paper sheet.
The fifth step: and carrying out hot-pressing drying on the obtained paper sheet, and removing excessive water to obtain the high-temperature-resistant wave-absorbing film with uniform thickness distribution and certain toughness.
According to some embodiments, the temperature of the hot press drying may be controlled at 90 to 120 ℃, which is adjusted according to the kind of the binder.
According to some embodiments, the thickness of the obtained high temperature resistant wave-absorbing film is 0.1-0.2 mm.
Specific examples are listed below:
example 1
The first step is as follows: weighing 1g of short-cut tungsten core silicon carbide fiber with the length of 8mm and 10g of short-cut quartz fiber with the length of 6mm, and placing the fibers in a fiber dissociator;
the second step is that: weighing 2g of precipitated aramid fiber, and placing the aramid fiber in a fiber dissociator;
the third step: setting the rotating speed of the fiber dissociator to be 800r/min, the dissociation time to be 10min, adding 4L of deionized water into the fiber dissociator, and starting the fiber dissociator;
the fourth step: after dissociation is finished, pouring the mixed solution in the fiber dissociator into a square paper sheet former, and starting a suction filtration program to obtain a paper sheet;
the fifth step: and carrying out hot-pressing drying on the obtained paper sheet at 100 ℃, removing excessive water, and preparing the high-temperature-resistant wave-absorbing film with the thickness of 0.1 mm.
The dielectric constant of the high temperature resistant wave absorbing film obtained in the embodiment in the S band is shown in fig. 1.
Example 2
The first step is as follows: weighing 3g of chopped tungsten core silicon carbide fiber with the length of 5mm and 10g of chopped quartz fiber with the length of 12mm, and placing the fibers in a fiber dissociator;
the second step is that: weighing 1.5g of precipitated aramid fiber, and placing the aramid fiber in a fiber dissociator;
the third step: setting the rotating speed of the fiber dissociator at 600r/min, the dissociation time at 15min, adding 3L of deionized water into the fiber dissociator, and starting the fiber dissociator;
the fourth step: after dissociation is finished, pouring the mixed solution in the fiber dissociation device into a square paper sheet forming device, and starting a suction filtration program to obtain a paper sheet;
the fifth step: and carrying out hot-pressing drying on the obtained paper sheet at 90 ℃, removing excessive water, and preparing the high-temperature-resistant wave-absorbing film with the thickness of 0.1 mm.
The dielectric constant of the high temperature resistant wave absorbing film obtained in this embodiment in the S band is shown in fig. 2.
Example 3
The first step is as follows: weighing 10g of short-cut tungsten core silicon carbide fiber with the length of 10mm and 10g of short-cut quartz fiber with the length of 10mm, and placing the fibers in a fiber dissociator;
the second step: weighing 1g of precipitated aramid fiber, and placing the aramid fiber in a fiber dissociator;
the third step: setting the rotating speed of the fiber dissociator to be 1000r/min, dissociating for 5min, adding 5L of deionized water into the fiber dissociator, and starting the fiber dissociator;
the fourth step: after dissociation is finished, pouring the mixed solution in the fiber dissociator into a square paper sheet former, and starting a suction filtration program to obtain a paper sheet;
the fifth step: and carrying out hot-pressing drying on the obtained paper sheet at 120 ℃, removing excessive water, and preparing the high-temperature-resistant wave-absorbing film with the thickness of 0.2mm.
The dielectric constant of the high temperature resistant wave absorbing film obtained in the embodiment in the S band is shown in fig. 3.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A preparation method of a high-temperature-resistant wave-absorbing film is characterized by comprising the following steps:
1) Weighing an absorbent and wave-transparent substrate fibers, wherein the absorbent and the wave-transparent substrate fibers are both chopped fibers and are placed in a fiber dissociator;
2) Weighing a binder, and placing the binder in the fiber dissociator;
3) Setting the rotating speed and the dissociation time of the fiber dissociator, adding deionized water into the fiber dissociator, and starting the fiber dissociator to dissociate;
4) After dissociation is finished, pouring the mixed solution in the fiber dissociator into a square paper sheet former, and starting a suction filtration program to obtain a paper sheet;
5) And carrying out hot-pressing drying on the obtained paper sheet, and removing excessive water to obtain the high-temperature-resistant wave-absorbing film.
2. The method according to claim 1, wherein the absorbent is one selected from tungsten core silicon carbide fiber, silicon carbide-based composite fiber, boron nitride fiber, and aluminum nitride fiber; the wave-transparent substrate fiber is one of quartz fiber, glass fiber and alumina fiber.
3. The production method according to claim 1 or 2, wherein the mass ratio between the absorber and the wave-transparent substrate fiber is (1-10): 10.
4. The method according to claim 1 or 2, wherein the length of the absorbent is 5 to 10mm, and the length of the wave-transparent base fiber is 6 to 12mm.
5. The preparation method according to claim 1, wherein the binder comprises one or more of fibrid, polyvinyl alcohol, polyacrylate and low-melting point polypropylene fiber.
6. The method according to claim 1 or 5, wherein the binder is contained in an amount of 5 to 15% by mass based on the total amount of the absorbent, the wave-transparent base material fiber and the binder.
7. The preparation method according to claim 1, wherein the fiber dissociator is set to rotate at a speed of 600-1000 r/min for a period of 5-15 min.
8. The method of claim 1, wherein 3 to 5L of deionized water is added to the fiber debonder.
9. The method according to claim 1, wherein the temperature of the hot press drying is 90 to 120 ℃.
10. The preparation method according to claim 1, wherein the thickness of the high temperature resistant wave-absorbing film is 0.1-0.2 mm.
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| CN202211440972.3A CN115726227A (en) | 2022-11-17 | 2022-11-17 | Preparation method of high-temperature-resistant wave-absorbing film |
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| CN202211440972.3A CN115726227A (en) | 2022-11-17 | 2022-11-17 | Preparation method of high-temperature-resistant wave-absorbing film |
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| CN202211440972.3A Pending CN115726227A (en) | 2022-11-17 | 2022-11-17 | Preparation method of high-temperature-resistant wave-absorbing film |
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