CN115724661A - High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof - Google Patents
High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof Download PDFInfo
- Publication number
- CN115724661A CN115724661A CN202211020993.XA CN202211020993A CN115724661A CN 115724661 A CN115724661 A CN 115724661A CN 202211020993 A CN202211020993 A CN 202211020993A CN 115724661 A CN115724661 A CN 115724661A
- Authority
- CN
- China
- Prior art keywords
- temperature
- retao
- thermal barrier
- oxygen barrier
- integrated material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 64
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 60
- 239000001301 oxygen Substances 0.000 title claims abstract description 60
- 239000000919 ceramic Substances 0.000 title claims abstract description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002019 doping agent Substances 0.000 claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 22
- 238000000498 ball milling Methods 0.000 claims abstract description 17
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 16
- 238000005245 sintering Methods 0.000 claims abstract description 14
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000007873 sieving Methods 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000005303 weighing Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000001354 calcination Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000002490 spark plasma sintering Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000012216 screening Methods 0.000 claims description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- -1 oxygen ions Chemical class 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000010532 solid phase synthesis reaction Methods 0.000 abstract description 2
- 239000012720 thermal barrier coating Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 229910002080 8 mol% Y2O3 fully stabilized ZrO2 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010416 ion conductor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The application discloses a high temperature resistant Y 2 O 3 ‑RETaO 4 An oxygen barrier/thermal barrier ceramic integrated material and a preparation method thereof, wherein the raw material comprises rare earth oxide RE 2 O 3 Tantalum pentoxide and dopant Y 2 O 3 Rare earth oxide RE 2 O 3 And tantalum pentoxide in a molar ratio of 1:1, synthesis of RETaO by solid phase method 4 Powder of Y 2 O 3 Doped in RETaO 4 Ball milling, drying and sieving the powder, and sintering by using discharge plasma to obtain Y 2 O 3 ‑RETaO 4 Oxygen barrier/thermal barrier ceramic integrated materialAnd (5) feeding. The material has low thermal conductivity, excellent high-temperature fracture toughness and excellent oxygen barrier property, namely, the material can block the diffusion of oxygen ions, avoid the growth of TGO and prolong the service life of a coating.
Description
Technical Field
The invention relates to the technical field of high-temperature thermal protection and oxidation resistance, in particular to high-temperature-resistant Y 2 O 3 -RETaO 4 An oxygen barrier/thermal barrier ceramic integrated material and a preparation method thereof.
Background
The thermal barrier coating material is widely applied to aeroengines, gas turbines and the like due to good thermal insulation, high temperature resistance, corrosion resistance, thermal shock resistance and thermal shock resistance. A typical thermal barrier coating system generally includes an alloy substrate, a bond coat, a ceramic layer, and a thermally grown oxide layer (TGO) between the bond coat and the ceramic layer. Leckie et al found that TGO is one of the main causes of thermal barrier coating failure, during the high temperature thermal cycle phase, due to oxidation of the bond coat, the continuous growth of TGO causes the thermal expansion coefficient mismatch between the bond coat and the ceramic layer, and generates huge stress inside the thermal barrier coating system, thereby causing the TGO to shift towards the vertical direction of the ceramic layer, and when the displacement of TGO is too large, the TGO will fail to peel off, and the thermal barrier coating system will also fail accordingly.
To avoid high temperature oxidation of the metal substrate and bond coat, the diffusion of oxygen ions in the thermal barrier coating should be reduced. Yttria-stabilized zirconia (YSZ) is the most studied and most widely used thermal barrier coating material at present, but it is actually an oxygen ion conductor, and Rajeswari et al report that the ion conductivity of stabilized zirconia ceramic (8 YSZ) is from 0.09S/cm to 0.134S/cm in the range of 800 ℃, just because YSZ is an oxygen ion conductor and is also used as an electrode material of a fuel cell, but when used for thermal barrier coating, oxygen ions diffuse to a bonding layer through a ceramic layer YSZ, so that oxidation of a metal substrate and the bonding layer is caused, failure of the thermal barrier coating system is accelerated, and therefore, a new coating material integrating a thermal barrier and an oxygen barrier is urgently needed to be found.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a high-temperature-resistant Y 2 O 3 Rare earth tantalate RETaO 4 The material has low thermal conductivity, excellent high-temperature fracture toughness and excellent oxygen barrier performance, namely can block the diffusion of oxygen ions, avoid the growth of TGO and prolong the service life of a coating.
The technical scheme adopted by the invention is as follows:
high-temperature-resistant Y 2 O 3 -RETaO 4 The oxygen barrier/thermal barrier ceramic integrated material comprises rare earth oxide RE 2 O 3 Ta, tantalum pentoxide 2 O 5 And a dopant Y 2 O 3 Said rare earth oxide RE 2 O 3 And Ta tantalum pentoxide 2 O 5 In a molar ratio of 1:1, for the synthesis of RETaO 4 Powder;
the dopant Y 2 O 3 For doping in RETaO 4 In the powder, a dopant Y 2 O 3 In the RETaO 4 The doping proportion is 1-10% of the total mass, and Y is prepared by ball milling, drying and sieving and spark plasma sintering 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material.
Compared with the prior art, the invention has the beneficial effects that:
high temperature resistant Y of the invention 2 O 3 -RETaO 4 The oxygen barrier/thermal barrier ceramic integrated material adopts the raw materials and the proportion, firstly, the oxygen barrier and thermal barrier coating integrated coating material with excellent performance, rare earth tantalate (RETaO) 4 Thermal conductivity (2.5 W.m) of novel thermal barrier coating material with YSZ as high-temperature thermal protection -1 ·K -1 Has lower thermal conductivity (1.57-2.2 W.m) compared with 800 DEG C -1 ·K -1 800 ℃ C.), furthermore, the invention has found that the addition of a dopant Y 2 O 3 The doped and modified rare earth tantalate is also an insulator of oxygen ions, has excellent oxygen barrier performance, can block the diffusion of the oxygen ions, avoids the growth of TGO and prolongs the service life of the coating.
As a preferred embodiment of the present inventionThe rare earth oxide RE 2 O 3 Is La 2 O 3 、Nd 2 O 3 、Pm 2 O 3 、Sm 2 O 3 、Eu 2 O 3 、Gd 2 O 3 、Tb 2 O 3 、Dy 2 O 3 、Ho 2 O 3 、Er 2 O 3 、Tm 2 O 3 、Yb 2 O 3 And Lu 2 O 3 A mixture of one or more of (a).
As a preferred embodiment of the present invention, the rare earth oxide RE 2 O 3 And tantalum pentoxide Ta 2 O 5 The purity of the product is more than or equal to 99.99 percent, and the particle size is within the range of 10-50 mu m. The grain size is controlled within the range, the small grains fill the pores among the large grains in the sintering process, the density and the strength of the sample can be improved, and the stability of the material performance is ensured by adopting the raw materials with the purity of more than or equal to 99.99 percent and the grain size range.
The invention also provides a high-temperature resistant Y 2 O 3 -RETaO 4 The preparation method of the oxygen barrier/thermal barrier ceramic integrated material comprises the following steps:
(1) Weighing rare earth oxide RE with equal molar ratio according to proportion 2 O 3 Tantalum pentoxide Ta 2 O 5 Using absolute ethyl alcohol as medium, ball-milling in ball mill, drying, sieving;
(2) Calcining at 1400-1700 ℃ for 2-20 h with the heating rate of 5-10 ℃/min, cooling after the calcining is finished, taking out the powder when the temperature is reduced to room temperature, and obtaining RETaO 4 Powder;
(3) Weighing the dopant Y 2 O 3 And then the RETaO is recycled by the ball mill 4 Powder and dopant Y 2 O 3 Ball milling into slurry, drying and screening the particle size;
(4) Sintering the ceramic block by using discharge plasma sintering equipment at the sintering temperature of 1400-1700 ℃, keeping the temperature for 5-20 min at the heating rate of 50-100 ℃/min, annealing the sintered ceramic block at a low temperature, and then annealing the ceramic block at a high temperature.
The preparation method has the following beneficial effects:
1. doping with a dopant Y 2 O 3 Then, Y 3+ Ion solutionizing to Ta 5+ And RE 3+ And (3) position, improving the oxygen vacancy concentration in the material system, enabling the oxygen vacancies in the system to form clusters, reducing the concentration of carriers (available oxygen vacancies), further reducing the oxygen ion conductivity, improving the oxygen insulation of the material, and forming an equation of the oxygen vacancies as follows:
2. the sintered ceramic block is subjected to a unique annealing process, namely, the internal stress in the ceramic block can be removed through low-temperature annealing and then high-temperature annealing, the pulverization or the fragmentation of the block caused by stress release in the high-temperature use process of the ceramic block is avoided, and the high-temperature annealing is used for completely removing carbon permeated in the ceramic block in the sintering process.
As a preferred embodiment of the present invention, in the ball milling in the step (1), the ratio of the balls: raw materials: the mass ratio of the absolute ethyl alcohol is 1-9: 1 to 5:1 to 5, the ball milling time is more than or equal to 12 hours, and the rotating speed of the ball mill is 300 to 600r/min. Selecting the rare earth oxide RE according to the above requirements 2 O 3 Ta, tantalum pentoxide 2 O 5 When ball milling is carried out, raw materials with more uniform particle size distribution can be obtained, and the subsequent reaction is more sufficient.
In a preferred embodiment of the present invention, the slurry after ball milling in step (3) is dried at 60 to 100 ℃ for 10 to 100 hours, and then sieved to obtain particles having a particle size of 170 to 1300 mesh. The powder density after sintering of the raw material with the grain diameter interval is higher.
In a preferred embodiment of the present invention, the temperature during low temperature annealing is 500 to 800 ℃, the temperature rise rate is 2 to 5 ℃/min, the temperature is maintained for 120 to 600min, the temperature during high temperature annealing is 1400 to 1700 ℃, the temperature rise rate is 5 to 10 ℃/min, and the temperature is maintained for 120 to 600min. The low-temperature annealing and the high-temperature annealing adopt the temperature, the heating rate and the heat preservation time within the control range, so that the internal stress in the ceramic block can be removed to a greater extent, and carbon permeated in the ceramic block in the sintering process can be completely removed.
Drawings
FIG. 1 is x% Y in an embodiment of the present invention 2 O 3 -YbTaO 4 (x =1, 3, 5, 7, 10) and comparative example 1;
FIG. 2 is x% Y in an embodiment of the present invention 2 O 3 -YbTaO 4 (x =1, 3, 5, 7, 10) and comparative example 1;
FIG. 3 is an oxygen ion conductivity map of examples 6 to 12 of the present invention and comparative example 2;
FIG. 4 is a graph of thermal conductivity for inventive examples 6-12 and comparative example 2.
Detailed Description
Exemplary embodiments that embody features and advantages of the invention are described in detail below. It is understood that the invention is capable of other and different embodiments and its several details are capable of modification in various other respects, all without departing from the scope of the present invention, and that the description and drawings are to be taken as illustrative and not restrictive in character.
Example 1:
high-temperature-resistant Y 2 O 3 -YbTaO 4 The oxygen barrier/thermal barrier ceramic integrated material is prepared from a raw material including a rare earth oxide Yb 2 O 3 Ta, tantalum pentoxide 2 O 5 And a dopant Y 2 O 3 Weighing rare earth oxide Yb 2 O 3 And Ta tantalum pentoxide 2 O 5 The total amount of the two is 2000g, and the molar ratio of the two is 1:1, synthesis of YbTaO by solid phase method 4 Powder of Y 2 O 3 Doped in YbTaO 4 Ball milling, drying and sieving the powder, and sintering by utilizing discharge plasma to obtain Y 2 O 3 -YbTaO 4 Oxygen barrier/thermal barrier ceramic integrated material.
Above high temperature resistant Y 2 O 3 -YbTaO 4 The preparation method of the oxygen barrier/thermal barrier ceramic integrated material comprises the following steps:
(1) Weighing raw material rare earth oxide Yb according to a molar ratio of 1 2 O 3 And fiveTantalum oxide Ta 2 O 5 The mass ratio of 2000g in total to 9:2:4 weighing 1200g of zirconia balls, raw materials and absolute ethyl alcohol in proportion, placing the materials in a ball mill for ball milling for 48 hours, drying the materials at 90 ℃ for 60 hours, and sieving the materials with a 325-mesh sieve;
(2) Calcining in a high-temperature box type furnace at the temperature of 1500 ℃ for 6 hours at the temperature of 5 ℃/min for 6 hours, cooling along with the furnace after the calcining is finished, and taking out the powder when the temperature is reduced to room temperature;
(3) 1gY is 2 O 3 Doped in 99g of sintered RETaO 4 And (2) putting the powder into a ball mill for ball milling, wherein the mass ratio of the powder to the powder is 9:2: weighing 600g of zirconia balls, sintered powder and absolute ethyl alcohol according to the proportion of 4, drying the zirconia balls, the sintered powder and the absolute ethyl alcohol at 90 ℃ for 60 hours, and screening particles with the particle size range of 170-1300 meshes;
(4) Sintering the sieved powder into ceramic blocks by using spark plasma sintering equipment (SPS), wherein the sintering temperature is 1500 ℃, the temperature is kept for 10min, the heating rate is 50 ℃/min, and the ceramic blocks are taken out after the furnace is cooled to obtain Y 2 O 3 -YbTaO 4 An oxygen barrier/thermal barrier ceramic integrated material is prepared by annealing a sintered ceramic block at 800 ℃ for 600min at a heating rate of 2 ℃/min, and annealing the ceramic block at 1600 ℃ for 300min after furnace cooling at a heating rate of 10 ℃/min.
Annealing the Y 2 O 3 -YbTaO 4 XRD compositional analysis of the ceramic blocks, as in FIG. 1 (a), by comparison with standard cards (YbTaO) 4 PDF: 24-1413) and fig. 1 (b) is a partial enlarged view (26-35 °) of fig. 1 (a), and it was found that Y synthesized in the present invention 2 O 3 -YbTaO 4 With YbTaO 4 The peak position of the doped Y is shown to be shifted to a small angle compared with the peak position of the doped Y 2 O 3 Then, the lattice constant becomes large because of the radius (Y) of the doping atom 3+ ) Proportion body (Yb) 3+ ) The crystal lattice parameters are changed, and the crystal lattice distortion occurs in the crystal structure. The impedance value at 600 to 900 ℃ was measured using the ac impedance and the conductivity was calculated as shown in fig. 2 (a).
Example 2:
the difference from example 1 is that the dopant Y 2 O 3 Accounting for 3 percent of the total mass, and the conductivity at 600-900 ℃ is shown in figure 2 (b).
Example 3:
the difference from example 1 is that the dopant Y 2 O 3 The proportion of the total mass is 5%, and the conductivity at 600-900 ℃ is shown in figure 2 (b).
Example 4:
the difference from example 1 is that the dopant Y 2 O 3 The proportion of the total mass is 7 percent, and the conductivity at 600-900 ℃ is shown in figure 2 (b).
Example 5:
the difference from example 1 is that the dopant Y 2 O 3 The proportion of the total mass is 10%, and the conductivity at 600-900 ℃ is shown in figure 2 (b).
Comparative example 1:
the difference from example 1 is that the dopant Y 2 O 3 The proportion of the total mass is 0%, and the conductivity at 600-900 ℃ is shown in figure 2 (a).
A comprehensive comparison of examples 1-5 and comparative example 1 revealed that with the dopant Y 2 O 3 Increase in percentage of Y 2 O 3 -YbTaO 4 The conductivity of the oxygen barrier/thermal barrier ceramic integrated material tends to increase first and then decrease, and when the percentage content is 3%, the conductivity is the lowest. This is because Y has a valence of 3 3+ Ion solutionizing to Ta 5+ And RE 3+ The position, the degree of disorder of the atoms increases, the oxygen vacancy concentration increases, the oxygen ion conductivity and the oxygen diffusion rate increase, and the oxidation resistance decreases, but the oxygen vacancy conductivity does not increase with the increase of the doping concentration, but decreases after having a peak, because: (1) After the concentration of the oxygen vacancies is increased to a certain concentration, defect association occurs, and the association between the vacancies and the vacancies causes that part of the oxygen vacancies can not be used as an oxygen ion transmission path; (2) In order to maintain electrostatic equilibrium, adsorption of oxygen vacancies by electrons makes oxygen vacancies unable to act as oxygen ion transport paths; (3) Effect of cation radius on conductivity, dopant ion radius and hostThe larger the difference of the ionic radius is, the higher the binding energy is, the lower the ionic conductivity obtained after doping is, the better the oxidation resistance is, and the ionic radius is shown in table 1).
| Ion(s) in a substrate | Y 3+ | Nd 3+ | Sm 3+ | Gd 3+ | Dy 3+ | Ho 3+ | Er 3+ | Tm 3+ | Yb 3+ | Lu 3+ | Eu 3+ | Ta 5+ | W 6+ |
| Radius of ion (nm) | 0.1019 | 0.1109 | 0.1079 | 0.1053 | 0.1027 | 0.1015 | 0.1004 | 0.0994 | 0.0985 | 0.0977 | 0.1066 | 0.074 | 0.42 |
Example 6
The difference from example 1 is that the dopant Y 2 O 3 The proportion of the total mass is 3 percent, the temperature of the spark plasma sintering is 1700 ℃, the electrical conductivity of the spark plasma sintering is shown in figure 3 at 600-900 ℃, and the thermal conductivity is shown in figure 4.
Example 7
The difference from the example 6 is that the synthesized oxygen barrier/thermal barrier ceramic integrated material is Y 2 O 3 -NdTaO 4 The electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Example 8
The difference from the embodiment 6 is that the synthesized oxygen barrier/thermal barrier ceramic integrated material is Y 2 O 3 -DyTaO 4 The electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Example 9
The difference from the embodiment 6 is that the synthesized oxygen barrier/thermal barrier ceramic integrated material is Y 2 O 3 -HoTaO 4 The electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Example 10
The difference from the example 6 is that the synthesized oxygen barrier/thermal barrier ceramic integrated material is Y 2 O 3 -ErTaO 4 The electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Example 11
The difference from the example 6 is that the synthesized oxygen barrier/thermal barrier ceramic integrated material is Y 2 O 3 -TmTaO 4 The electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Example 12
The difference from the example 6 is that the synthesized oxygen barrier/thermal barrier ceramic integrated material is Y 2 O 3 -LuTaO 4 The electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Comparative example 2
The thermal barrier coating material 8YSZ commonly used in the prior art is a control group, and the electrical conductivity at 600-900 ℃ is shown in figure 3, and the thermal conductivity is shown in figure 4.
Comparative examples 6 to 12 and comparative example 2 were comprehensively analyzed to find Y 2 O 3 -RETaO 4 The material has obviously lower oxygen ion conductivity and thermal conductivity than 8YSZ, and shows that the material has excellent thermal barrier and oxygen barrier properties.
The above description is only an example of the present invention and common general knowledge of known features in the schemes is not described herein. It should be noted that, for those skilled in the art, without departing from the concept of the present invention, several variations and modifications can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the utility of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.
Claims (7)
1. High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material, its characterized in that:
the raw material comprises rare earth oxide RE 2 O 3 Ta, tantalum pentoxide 2 O 5 And a dopant Y 2 O 3 Said rare earth oxide RE 2 O 3 And tantalum pentoxide Ta 2 O 5 In a molar ratio of 1:1, for the synthesis of RETaO 4 Powder;
the dopant Y 2 O 3 For doping in RETaO 4 In the powder, dopant Y 2 O 3 In the RETaO 4 The doping proportion is 1-10% of the total mass, and Y is prepared by ball milling, drying and sieving and spark plasma sintering 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material.
2. The high temperature resistant Y of claim 1 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material, its characterized in that: the rare earth oxide RE 2 O 3 Is La 2 O 3 、Nd 2 O 3 、Pm 2 O 3 、Sm 2 O 3 、Eu 2 O 3 、Gd 2 O 3 、Tb 2 O 3 、Dy 2 O 3 、Ho 2 O 3 、Er 2 O 3 、Tm 2 O 3 、Yb 2 O 3 And Lu 2 O 3 A mixture of one or more of (a).
3. High temperature Y according to any of claims 1-2 2 O 3 -RETaO 4 The oxygen barrier/thermal barrier ceramic integrated material is characterized in that: the rare earth oxide RE 2 O 3 And Ta tantalum pentoxide 2 O 5 The purity of the product is more than or equal to 99.99 percent, and the particle size is within the range of 10-50 mu m.
4. High-temperature-resistant Y 2 O 3 -RETaO 4 The preparation method of the oxygen barrier/thermal barrier ceramic integrated material is characterized in thatThe method comprises the following steps:
(1) Weighing rare earth oxide RE with equal molar ratio according to proportion 2 O 3 Ta, tantalum pentoxide 2 O 5 Using absolute ethyl alcohol as medium, ball-milling in ball mill, drying, sieving;
(2) Calcining at 1400-1700 ℃ for 2-20 h with the heating rate of 5-10 ℃/min, cooling after the calcining is finished, taking out the powder when the temperature is reduced to room temperature, and obtaining RETaO 4 Powder;
(3) Weighing the dopant Y 2 O 3 And then the RETaO is recycled by the ball mill 4 Powder and dopant Y 2 O 3 Ball milling into slurry, drying and screening the particle size;
(4) Sintering the ceramic block by using discharge plasma sintering equipment at the sintering temperature of 1400-1700 ℃, keeping the temperature for 5-20 min at the heating rate of 50-100 ℃/min, annealing the sintered ceramic block at a low temperature, and then annealing the ceramic block at a high temperature.
5. The high temperature Y of claim 4 2 O 3 -RETaO 4 The preparation method of the oxygen barrier/thermal barrier ceramic integrated material is characterized by comprising the following steps: during ball milling in the step (1), ball: raw materials: the mass ratio of the absolute ethyl alcohol is (1-9): (1-5): (1-5), the ball milling time is more than or equal to 12 hours, and the rotating speed of the ball mill is 300-600 r/min.
6. The high temperature Y of claim 4 2 O 3 -RETaO 4 The preparation method of the oxygen barrier/thermal barrier ceramic integrated material is characterized by comprising the following steps: and (4) drying the slurry subjected to ball milling in the step (3) at the temperature of between 60 and 100 ℃ for 10 to 100 hours, sieving the dried slurry, and screening the particles with the particle size of between 170 and 1300 meshes.
7. The high temperature Y of claim 4 2 O 3 -RETaO 4 The preparation method of the oxygen barrier/thermal barrier ceramic integrated material is characterized by comprising the following steps: the temperature is 500-800 ℃ during low-temperature annealing, the heating rate is 2-5 ℃/min, the temperature is kept for 120-600 min, the temperature for high-temperature annealing is 1400-1700 ℃, and the heating rate is 510 ℃ per minute and the temperature is kept for 120 to 600 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211020993.XA CN115724661A (en) | 2022-08-24 | 2022-08-24 | High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211020993.XA CN115724661A (en) | 2022-08-24 | 2022-08-24 | High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115724661A true CN115724661A (en) | 2023-03-03 |
Family
ID=85292836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211020993.XA Pending CN115724661A (en) | 2022-08-24 | 2022-08-24 | High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115724661A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107602120A (en) * | 2017-08-01 | 2018-01-19 | 昆明理工大学 | A kind of preparation method of fine and close rare earth tantalate refractory ceramics |
| CN109836155A (en) * | 2019-01-18 | 2019-06-04 | 昆明理工大学 | A kind of double rare earth tantalate solid solution refractory ceramics of densification ferroelasticity and preparation method thereof |
| CN110002870A (en) * | 2019-04-26 | 2019-07-12 | 昆明理工大学 | A kind of rare earth tantalate ceramics and preparation method thereof of anti-low melting point oxide corrosion |
| CN111925211A (en) * | 2020-08-28 | 2020-11-13 | 昆明理工大学 | A2B2O7 type rare earth tantalate ceramic and preparation method thereof |
| CN113603483A (en) * | 2021-08-06 | 2021-11-05 | 陕西天璇涂层科技有限公司 | Rare earth tantalate YxGd(1-x)TaO4Spherical powder and preparation method thereof |
| CN113603140A (en) * | 2021-08-31 | 2021-11-05 | 陕西天璇涂层科技有限公司 | Method for preparing double rare earth tantalate hollow sphere powder by centrifugal spray granulation method |
| US20220112132A1 (en) * | 2018-12-29 | 2022-04-14 | Kunming University Of Science And Technology | Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate reta/nbo4 ceramic powder and preparation method thereof |
-
2022
- 2022-08-24 CN CN202211020993.XA patent/CN115724661A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107602120A (en) * | 2017-08-01 | 2018-01-19 | 昆明理工大学 | A kind of preparation method of fine and close rare earth tantalate refractory ceramics |
| US20220112132A1 (en) * | 2018-12-29 | 2022-04-14 | Kunming University Of Science And Technology | Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate reta/nbo4 ceramic powder and preparation method thereof |
| CN109836155A (en) * | 2019-01-18 | 2019-06-04 | 昆明理工大学 | A kind of double rare earth tantalate solid solution refractory ceramics of densification ferroelasticity and preparation method thereof |
| CN110002870A (en) * | 2019-04-26 | 2019-07-12 | 昆明理工大学 | A kind of rare earth tantalate ceramics and preparation method thereof of anti-low melting point oxide corrosion |
| CN111925211A (en) * | 2020-08-28 | 2020-11-13 | 昆明理工大学 | A2B2O7 type rare earth tantalate ceramic and preparation method thereof |
| CN113603483A (en) * | 2021-08-06 | 2021-11-05 | 陕西天璇涂层科技有限公司 | Rare earth tantalate YxGd(1-x)TaO4Spherical powder and preparation method thereof |
| CN113603140A (en) * | 2021-08-31 | 2021-11-05 | 陕西天璇涂层科技有限公司 | Method for preparing double rare earth tantalate hollow sphere powder by centrifugal spray granulation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110272278B (en) | High-entropy ceramic powder for thermal barrier coating and preparation method thereof | |
| WO2020215699A1 (en) | Rare earth tantalate ceramic resisting corrosion of low melting point oxide and preparation method therefor | |
| CN110002871B (en) | Two-phase rare earth tantalate ceramic and preparation method thereof | |
| CN110002873B (en) | Porous tantalate ceramic and preparation method thereof | |
| CN111410525B (en) | High-performance zinc oxide resistance ceramic material and preparation method thereof | |
| Wang et al. | Low-temperature synthesis of SmO0. 8F0. 2FeAs superconductor with Tc= 56.1 K | |
| KR101412404B1 (en) | Oxide sintered object, sputtering target comprising the sintered object, process for producing the sintered object, and process for producing sputtering target comprising the sintered object | |
| KR102002221B1 (en) | Perovskite catalyst comprising gold nanoparticle and manufacturing method of the perovskite | |
| EP2500447A1 (en) | Cu-in-ga-se quaternary alloy sputtering target | |
| CN116120062B (en) | High-temperature-resistant defect type Y (Y) x Ta 1-x )O 4-x Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof | |
| CN112391565A (en) | Preparation method of ZrC dispersion strengthened tungsten-copper composite material | |
| CN116462505B (en) | High-entropy rare earth tantalate oxygen ion insulator material and preparation method thereof | |
| JP2009097088A (en) | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM OR THE LIKE | |
| EP2508497B1 (en) | ZnO vapor deposition material and process for producing the same | |
| CN115724661A (en) | High-temperature-resistant Y 2 O 3 -RETaO 4 Oxygen barrier/thermal barrier ceramic integrated material and preparation method thereof | |
| JP5019323B2 (en) | Ceria sintered body doped with rare earth element and manufacturing method thereof | |
| US11807582B1 (en) | Silicon nitride ceramic sintered body and preparation method thereof | |
| JP2009097090A (en) | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM OR THE LIKE | |
| JP2009097086A (en) | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM OR THE LIKE | |
| JP5418748B2 (en) | ZnO vapor deposition material, method for producing the same, and method for forming the ZnO film | |
| JP2009097091A (en) | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM OR THE LIKE | |
| JP2009097089A (en) | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM OR THE LIKE | |
| JP5720726B2 (en) | Zinc oxide sintered body and method for producing the same | |
| Yoshida et al. | Low temperature spark plasma sintering of tin oxide doped with tantalum oxide | |
| Ma et al. | Electrochemical performance of solid oxide fuel cells with Sm, Nd co-doped Ce0. 85 (SmxNd1− x) 0.15 O2− δ electrolyte |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |