CN115719875A - Radio frequency antenna packaging structure and preparation method thereof - Google Patents
Radio frequency antenna packaging structure and preparation method thereof Download PDFInfo
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Abstract
The application is applicable to the technical field of semiconductor packaging, and provides a radio frequency antenna packaging structure and a preparation method of the packaging structure, wherein the radio frequency antenna packaging structure comprises the following components: the antenna comprises an IC carrier plate, a middle placing layer, an antenna cover plate and an antenna structure; the lower surface of the IC carrier plate is covered with a metal layer, the upper surface of the IC carrier plate is fixed with a radio frequency integrated circuit, and the IC carrier plate is provided with a metal through hole which vertically penetrates through the IC carrier plate; the middle placing layer is positioned on the upper surface of the IC carrier plate, a metal layer covers the upper surface of the middle placing layer, and the middle placing layer is provided with metal through holes which vertically penetrate through the middle placing layer; the antenna cover plate is positioned on the upper surface of the middle placing layer, the upper surface of the antenna cover plate and the lower surface of the antenna cover plate are both covered with metal layers, and the antenna cover plate is provided with metal through holes which vertically penetrate through the antenna cover plate; the antenna structure is located on the upper surface of the antenna cover plate. The radio frequency antenna packaging structure has the shortest antenna feed structure and lower antenna dielectric loss, and realizes the AiP radio frequency antenna packaging structure with strong antenna radio frequency performance and high radiation efficiency.
Description
Technical Field
The application belongs to the technical field of semiconductor packaging, and particularly relates to a radio frequency antenna packaging structure and a manufacturing method of the packaging structure.
Background
The conventional tile-type phased-array Antenna adopts a AoB (Antenna-contained mother Board) framework, a T/R (Transmitter and receiver) packaging device is attached to the lower side of a PCB (Printed Circuit Board) mother Board, an Antenna is arranged on the upper side of the PCB mother Board, and the PCB mother Board not only needs to complete low-frequency interconnection functions such as power supply and control of the T/R device, but also needs to complete radio-frequency functions such as a radio-frequency power dividing/synthesizing network, antenna feeding, antenna and the like. The other side of the T/R welding surface is covered with silicone grease, a heat conducting pad and the like to realize soft contact with a heat dissipation structural part, so that heat is dissipated downwards through the path. The AoB architecture has the problems: 1) The PCB has extremely complex functions and high design and processing cost; 2) The T/R and the antenna have long interconnection path, need to pass through a PCB mother board with a plurality of layers and thicker thickness, and the antenna feed insertion loss is large; 3) The T/R is low in heat dissipation efficiency due to heat dissipation through a soft interface; 4) The upper side of the PCB motherboard is occupied by the antenna, the lower side of the PCB motherboard is occupied by the T/R device, and other devices for power management, digital logic control and the like can only be pasted through the horizontal expanded area, so that the area utilization rate is low.
To solve the problem of AoB architecture, the prior art provides a AiP (Antenna in Package) tile-type phased array architecture, and AiP tile-type phased array architecture has many advantages compared with AoB architecture. There are several implementations of AiP. For example, a Fan-out multi-injection Fan-out (Fan-out) Fan-out packaging process is used to process AiP package, and is generally used for packaging a rf cmos (Radio Frequency Complementary Metal Oxide Semiconductor) multi-channel amplitude-phase multifunctional chip, wherein in a FaceUp active area up mode, a chip active surface is rewired, and a TMV (Through-hole injection) process leads out a power supply, a control and a synthesis port to a bottom surface bonding pad, and an antenna is implemented on the chip by injection Molding and multi-layer metallization. The processing mode is wafer-level processing, the efficiency is high, but injection molding filler with low dielectric loss needs to be selected, and because no injection molding filler with loss characteristic comparable to that of a PCB exists at present, the antenna performance of the structure is poor, and the injection molding package is non-airtight package and is not suitable for high-reliability application scenes.
The double-sided lead-out packaging structure is also provided, and the main difference with the conventional single-sided lead-out packaging is that a planar antenna is mounted after ball planting and welding are carried out on the upper side of a cover plate, but the antenna and the packaging are processed and welded into a whole respectively, the overall stability is poor, the antenna is not AiP packaging in a strict sense, the antenna feed path is still longer, the influence of the dielectric loss of a PCB material on the antenna is not negligible, the application to high-frequency millimeter waves is more obvious, and in addition, the BGA welding balls on the upper layer and the lower layer of the packaging have certain influence on the thermal gradient design and the repairability of the whole phased array. Therefore, the existing AiP architectures all have the problems of poor antenna radio frequency performance and low radiation efficiency caused by high dielectric loss.
Disclosure of Invention
In view of this, embodiments of the present application provide a radio frequency antenna packaging structure and a method for manufacturing the packaging structure, so as to reduce the dielectric loss of the antenna packaging structure, and implement a AiP radio frequency antenna packaging structure with strong antenna radio frequency performance and high radiation efficiency.
The application is realized by the following technical scheme:
in a first aspect, an embodiment of the present application provides a radio frequency antenna package structure, including: the antenna comprises an IC carrier plate, a middle placing layer, an antenna cover plate and an antenna structure; the lower surface of the IC carrier plate is covered with a metal layer, the upper surface of the IC carrier plate is fixed with a radio frequency integrated circuit, and the IC carrier plate is provided with a metal through hole which vertically penetrates through the IC carrier plate; the middle placing layer is positioned on the upper surface of the IC carrier plate, a metal layer covers the upper surface of the middle placing layer, and the middle placing layer is provided with a metal through hole which vertically penetrates through the middle placing layer; the antenna cover plate is positioned on the upper surface of the middle placing layer, the upper surface of the antenna cover plate and the lower surface of the antenna cover plate are both covered with metal layers, and the antenna cover plate is provided with metal through holes which vertically penetrate through the antenna cover plate; the antenna structure is located on the upper surface of the antenna cover plate.
Based on the first aspect, in some embodiments, the middle placement layer covers a predetermined position on the upper surface of the IC carrier, a first sealed cavity is formed at a position not covered by the middle placement layer, and the rf integrated circuit is located in the first sealed cavity.
In some embodiments, based on the first aspect, the IC carrier material is high-resistivity silicon, glass, HTCC, LTCC, or Al 2 O 3 A ceramic material; the material of the middle layer is high-resistance silicon, glass and HTCC、LTCC、Al 2 O 3 A ceramic material or a metallic material.
Based on the first aspect, in some embodiments, the antenna cover plate material is high-resistance silicon, glass, HTCC, LTCC, or Al 2 O 3 A ceramic material.
In some embodiments, the antenna structure is a fully metallic material or a non-metallic material with an outer plating of metal, based on the first aspect.
In the embodiment of the invention, the antenna made of metal or plated with metal can resist high temperature, so that the packaging sealing cover can be made of high-temperature welding materials such as AuSn, cuSn and the like, the available heat gradient of phased array complete machine integration is not occupied, the solder selection of the welding point at the bottom is more flexible, and the repairability is stronger.
Based on the first aspect, in some embodiments, the lower surface of the IC carrier has solder joints in the form of BGA or QFN packages.
In a second aspect, an embodiment of the present application provides a method for manufacturing a radio frequency antenna package structure, for manufacturing the radio frequency antenna package structure according to any one of the first aspects, including: preparing an intermediate placing layer on the upper surface of the IC carrier plate, wherein the intermediate placing layer covers a preset position on the upper surface of the IC carrier plate, and an opening is formed at a position which is not covered by the intermediate placing layer; fixing a radio frequency integrated circuit in the opening; preparing an antenna structure on the upper surface of the antenna cover plate; fixing the lower surface of the antenna cover plate with the antenna structure with the upper surface of the middle placing layer; and preparing a welding point on the lower surface of the IC carrier plate.
Based on the second aspect, in some embodiments, preparing an intermediate placement layer on an upper surface of an IC carrier includes: and preparing a middle placement layer on a preset position of the upper surface of the IC carrier plate by using high-resistance silicon, glass, HTCC, LTCC, al2O3 ceramic or metal technology.
Based on the second aspect, in some embodiments, preparing an antenna structure on an upper surface of an antenna cover plate includes: preparing an antenna structure made of an all-metal material on the upper surface of the antenna cover plate through multiple photoetching and plating processes; or, welding the antenna structure made of the all-metal material to the upper surface of the antenna cover plate through a welding process; or, the antenna structure inner core made of the non-metal material is prepared on the upper surface of the antenna cover plate through a 3D printing process, and the antenna structure is prepared outside the antenna structure inner core made of the non-metal material through a plating process.
Based on the second aspect, in some embodiments, fixing the lower surface of the antenna cover plate with the antenna structure and the upper surface of the middle placement layer includes: welding the lower surface of the antenna cover plate with the antenna structure on the upper surface of the middle placement layer through a welding process; or, bonding the lower surface of the antenna cover plate with the antenna structure on the upper surface of the middle placement layer through a wafer-level bonding process.
The radio frequency antenna packaging structure in the embodiment of the invention only needs to consider metal loss and has no (or little) dielectric loss, so that the antenna can realize wider bandwidth and higher radiation efficiency than conventional LTCC, glass, PCB and other planar antennas; meanwhile, high-reliability airtight packaging can be realized, the material of the antenna cover plate is more freely selected, and the antenna performance is not influenced by the selection of the material of the cover plate; the packaging structure has the shortest antenna feed path, and is favorable for reducing the front-end feed loss to the minimum.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the specification.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the embodiments or the prior art description will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings may be obtained according to these drawings without inventive labor.
FIG. 1 is a diagram of a AoB watt phased array architecture provided by an embodiment of the present application;
FIG. 2 is a diagram of a AiP watt phased array architecture provided by an embodiment of the present application;
FIG. 3 is a schematic diagram of a Fan-out plastic package AiP architecture provided by the present application;
FIG. 4 is a schematic diagram of a dual-sided lead-out AiP package architecture according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a single-sided lead-out AiP package architecture provided by an embodiment of the present application;
fig. 6 is a schematic diagram of a radio frequency antenna package structure according to an embodiment of the present application;
fig. 7 is a schematic flowchart of a method for manufacturing a radio frequency antenna package structure according to an embodiment of the present application;
FIG. 8 is a process flow diagram of an HTCC process provided by an embodiment of the present application;
FIG. 9 is a flowchart of a process for forming an antenna structure by photolithography coating according to an embodiment of the present application;
fig. 10 is a three-dimensional structural diagram of an antenna cover plate and an antenna structure provided in the present embodiment;
fig. 11 is a flowchart of an embodiment of a manufacturing process of an rf antenna package structure according to an embodiment of the present disclosure.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
The conventional tile-type phased-array Antenna adopts a AoB (Antenna-contained mother Board) architecture, as shown in fig. 1, a T/R (T/transmit and receiver) packaging device is attached to the lower side of a PCB (Printed Circuit Board) mother Board, an Antenna is arranged on the upper side of the PCB mother Board, and the PCB mother Board not only needs to complete low-frequency interconnection functions such as power supply and control of the T/R device, but also needs to complete radio-frequency functions such as a radio-frequency power division/synthesis network, antenna feeding, and Antenna. The other side of the T/R welding surface is covered with silicone grease, a heat conducting pad and the like to realize soft contact with a heat dissipation structural member, so that heat is dissipated downwards through the path. The AoB architecture has the problems: 1) The PCB has extremely complex functions and high design and processing cost; 2) The T/R and the antenna have long interconnection path, need to pass through a PCB mother board with a plurality of layers and thicker thickness, and the antenna feed insertion loss is large; 3) The T/R is low in heat dissipation efficiency due to heat dissipation through a soft interface; 4) The upper side of the PCB motherboard is occupied by the antenna, the lower side of the PCB motherboard is occupied by the T/R device, and other devices for power management, digital logic control and the like can only be pasted through the horizontal expanded area, so that the area utilization rate is low. AoB architecture is suitable for low frequency and low cost application scenarios, for example, ground terminals of StarLink chain low-orbit internet constellations adopt the AoB architecture, chips are packaged by mature plastic package surface mount, production cost is low, and large-scale production is facilitated.
To solve the problem of AoB architecture, the prior art proposes a AiP (Antenna in Package) tile-type phased array architecture, and the AiP architecture including a PCB motherboard has the following advantages: the length of a feed path from the T/R to the antenna is greatly shortened, and the feed insertion loss of the antenna is remarkably reduced; the PCB motherboard does not need to process antenna feed and antenna functions any more, so that the realization difficulty of the PCB motherboard is reduced; the PCB motherboard only needs to process the power division/synthesis network radio frequency function, the required radio frequency layer is reduced, and the cost is reduced; the PCB has simplified functions, reduced layer number and reduced thickness, so that the PCB can be used as a heat conduction structure, good heat dissipation performance can be realized through dense through holes by reasonable design, and the AiP module, the PCB motherboard and the heat dissipation structure are combined by welding, so that the PCB has better structural strength and heat dissipation performance; because the AiP module only occupies the upper side of the PCB motherboard, the lower side of the PCB motherboard is completely released, the heat dissipation can be carried out by utilizing larger contact area, and meanwhile, devices such as capacitors, power supply management and the like can be attached to the lower side (right below an antenna) of the PCB motherboard under the design permission condition, so that the area utilization rate is improved. The AiP architecture is more suitable for high-performance application scenarios with strong antenna aperture restrictions.
There are several implementations of AiP. As shown in fig. 3, a Fan-out multi-injection Fan-out packaging process is used to process AiP package, and is generally used for packaging rf cmos (Radio Frequency Complementary Metal Oxide Semiconductor) multi-channel amplitude-phase multifunctional chip, wherein in the FaceUp mode, the active surface of the chip is rewired, and the TMV process (Through-hole injection) leads out the power supply, control and synthesis ports to the bottom surface bonding pad, and the antenna is implemented on the chip by re-injection Molding and multi-layer metallization. The processing mode is wafer-level processing, the efficiency is high, but low-loss injection molding filler needs to be selected, the antenna performance is compromised because no filler with loss characteristics comparable to those of a PCB (printed circuit board) exists at present, and the injection molding packaging is non-airtight packaging and is not suitable for high-reliability application scenes.
For compound chip packaging, it is generally necessary to place it in an air cavity in order not to affect the rf performance, and it is usually a hermetic package. As shown in fig. 4, there is a AiP version of a double-sided lead-out package + solder antenna suitable for compound chip packaging. The two-sided lead-out package includes two parts, namely a carrier and a cover plate, and the main difference from the conventional single-sided lead-out ceramic package shown in fig. 5 is that the middle placement layer and the cover plate have a vertical interconnection function. The upper side of the cover plate and the lower side of the support plate can be welded by Ball-planting, wherein the cover plate is welded with an antenna through BGA (Ball Grid Array, ball Grid Array package) technology, the antenna is a planar antenna, and the lower side of the support plate is welded with a motherboard through BGA. The mode realizes the airtight and high-reliability packaging of the compound chip with the air cavity, and meanwhile, the antenna can be designed by selecting a low dielectric material more suitable for the antenna application, and the antenna material and process selection are not limited by the packaging reliability. However, since the antenna and the package are processed separately and then welded together, the package is not AiP in a strict sense.
As shown in fig. 6, the present invention provides a radio frequency antenna package structure, which includes: an IC carrier plate 1, a middle placing layer 2, an antenna cover plate 3 and an antenna structure 4.
The lower surface of the IC carrier 1 is covered with a metal layer, the upper surface of the IC carrier 1 is fixed with a radio frequency integrated circuit 5, and the IC carrier 1 is provided with metal through holes which vertically penetrate through the IC carrier 1.
The middle placing layer 2 is positioned on the upper surface of the IC carrier plate 1, the upper surface of the middle placing layer 2 is covered with a metal layer, and the middle placing layer 2 is provided with a metal through hole which penetrates through the middle placing layer 2 from top to bottom.
Antenna apron 3 is located the middle upper surface of placing layer 2, and the upper surface of antenna apron 3 and the lower surface of antenna apron 3 all cover and have the metal level, and antenna apron 3 has seted up the metal through-hole that runs through antenna apron 3 from top to bottom.
The antenna structure 4 is located on the upper surface of the antenna cover 3. Compared with planar antennas such as PCB (Low Temperature Co-fired Ceramic), LTCC (Low Temperature Co-fired Ceramic) and the like, the three-dimensional antenna structure has higher design freedom degree and the shortest antenna feed path, is favorable for minimizing the front-end feed loss, and can realize wider bandwidth and higher radiation efficiency than the conventional planar antennas such as LTCC, glass, PCB and the like due to no (or little) dielectric loss.
In some embodiments, the middle placement layer 2 covers a predetermined position on the upper surface of the IC carrier 1, a first sealed cavity is formed at a position not covered by the middle placement layer 2, and the rf integrated circuit 5 is located in the first sealed cavity.
The vertical interconnection is realized through the metal through holes which penetrate through the whole radio frequency antenna packaging structure from top to bottom, the problem of interconnection of interfaces such as antenna feed and power supply control is solved at the packaging level, and the packaging level adopts a higher-order processing technology than that of the component level, so that the packaging level vertical interconnection is interconnection with higher integration level, shorter path and higher performance, and the integration level and the performance of a phased array complete machine are improved.
In some embodiments, the material of the IC carrier 1 is High-resistance silicon, glass, HTCC (High Temperature Co-fired Ceramic), LTCC or Al 2 O 3 A ceramic material. The material of the middle placing layer 2 is high-resistance silicon, glass, HTCC, LTCC and Al 2 O 3 A ceramic material or a metallic material. The antenna cover plate 3 is made of high-resistance silicon, glass, HTCC, LTCC or Al2O3 ceramic materials.
In some embodiments, the antenna structure 4 is an all-metal material or a non-metal material covered with a metal layer.
The antenna structure made of the nonmetal materials of the full metal materials or the external plating metal layer can resist high temperature, so that high-temperature welding materials such as AuSn and CuSn can be selected during packaging and sealing, the available heat gradient of the whole phased array machine integration is not occupied, the BGA solder is more flexible to select, and the reworkability is stronger.
In some embodiments, the lower surface of the IC carrier 1 has solder joints in the form of BGA (Ball Grid Array) or QFN (quad flat No-leads) packages.
The invention further provides a preparation method of the radio frequency antenna packaging structure, which is used for preparing the radio frequency antenna packaging structure and comprises the steps 101 to 105 as shown in fig. 7.
Step 101: preparing an intermediate placing layer 2 on the upper surface of the IC carrier 1, wherein the intermediate placing layer 2 covers a predetermined position on the upper surface of the IC carrier 1, and an opening is formed at a position not covered by the intermediate placing layer 2.
In some embodiments, the intermediately placed layer 2 may be prepared on a predetermined position of the upper surface of the IC carrier 1 by an HTCC process. The HTCC process is carried out by first forming a ceramic powder (e.g., al) as shown in FIG. 8 2 O 3 Or AlN) is added with organic binder and is mixed evenly to form paste slurry; then, scraping the slurry onto a base band by using a scraper to form uniform film slurry, drying to form a raw ceramic band with a certain thickness, stripping the raw ceramic band from the base band, and coiling for later use, namely a tape casting process; slicing (blanking) and punching according to design requirements; filling holes and manufacturing metal patterns by utilizing screen printing metal slurry; laminating the multilayer green body; cutting; sintering at high temperature (1200-1500 ℃).
Step 102: in which the radio frequency integrated circuit 5 is fixed.
Step 103: an antenna structure 4 is prepared on the upper surface of the antenna cover plate 3.
In some embodiments, the preparation of the antenna structure 4 on the upper surface of the antenna cover plate 3 may be achieved in any one of three ways:
as shown in fig. 9, an antenna structure 4 of an all-metal material is prepared on the upper surface of the antenna cover plate 3 through multiple photolithography and plating processes. The three-dimensional antenna is manufactured on the ceramic substrate in a photoetching coating mode, photoetching and coating are generally needed for multiple times in the processing process, and planarization is carried out when one coating is finished if necessary, so that the surface is smoother, the subsequent procedures are facilitated, and meanwhile, the height error can be modified.
The antenna may be processed in the above manner shown in fig. 9, or may be divided at a certain height of the antenna, and the antenna structure 4 made of an all-metal material is welded to the upper surface of the antenna cover plate 3 by a welding process.
Or the inner core of the antenna structure 4 made of the non-metal material can be prepared on the upper surface of the antenna cover plate 3 through a 3D printing process, and the antenna structure 4 is prepared by plating the inner core of the antenna structure 4 made of the non-metal material through a plating process.
The three-dimensional structure diagram of the antenna structure on the surface of the finally prepared antenna cover plate is shown in fig. 10, and the antenna structure also has a feed microstrip line and an auxiliary support structure in addition to the antenna structure.
Wherein the feed microstrip line's effect does: the vertical interconnect vias are distributed close to the edge, while the antenna feed point is located at about the center of the 1/4 area, so that a feed microstrip line is required to connect the vertical via to the antenna feed point,
the auxiliary supporting structure has the following functions: under the premise of not deteriorating the performance of the antenna, the antenna structure is protected, and an auxiliary supporting structure can be selected as a main pressing stress point when the antenna structure is used for welding.
In addition, after the antenna structure is prepared, surface treatment is needed, inert high-conductivity metals such as gold, thick silver and the like or non-conductive films are plated on the upper surface of the antenna cover plate and the surface of the antenna structure to play a role in surface corrosion prevention, and meanwhile, the surface current is ensured to be uniformly positioned in the Yu Liang conductor due to the thickness of the surface plating layer, so that the antenna structure has only little conductor loss and basically no medium loss.
Step 104: the lower surface of the antenna cover plate 3 with the antenna structure 4 is fixed to the upper surface of the intermediate placement layer 2.
In some embodiments, the lower surface of the antenna cover plate 3 with the antenna structure 4 may be welded to the upper surface of the intermediate placement layer 2 by a welding process.
Alternatively, the lower surface of the antenna cover plate 3 with the antenna structure 4 is bonded to the upper surface of the intermediate placement layer 2 by a wafer level bonding process.
Step 105: and preparing a welding point on the lower surface of the IC carrier plate 1.
Example 1
In the embodiment shown in fig. 11, the antenna cover plate 3 is first processed by HTCC process, and the three-dimensional antenna structure 4 is prepared by plating metal process; the IC carrier plate 1 and the middle placing layer 2 are processed by an HTCC process, and the radio frequency integrated circuit 5 is fixed on the upper surface of the IC carrier plate 1. Then, auSn is used as solder to fix the lower surface of the antenna cover plate 3 on the upper surface of the middle placing layer 2, and finally, balls are planted on the lower surface of the IC carrier plate 1 to prepare a welding point.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.
Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather mean "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (10)
1. A radio frequency antenna package structure, comprising: the antenna comprises an IC carrier plate, a middle placing layer, an antenna cover plate and an antenna structure;
the lower surface of the IC carrier plate is covered with a metal layer, the upper surface of the IC carrier plate is fixed with a radio frequency integrated circuit, and the IC carrier plate is provided with metal through holes which vertically penetrate through the IC carrier plate;
the middle placing layer is positioned on the upper surface of the IC carrier plate, a metal layer covers the upper surface of the middle placing layer, and the middle placing layer is provided with metal through holes which vertically penetrate through the middle placing layer;
the antenna cover plate is positioned on the upper surface of the middle placing layer, metal layers are covered on the upper surface of the antenna cover plate and the lower surface of the antenna cover plate, and the antenna cover plate is provided with metal through holes which penetrate through the antenna cover plate up and down;
the antenna structure is located on the upper surface of the antenna cover plate.
2. The radio frequency antenna package structure of claim 1, wherein the middle placement layer covers a predetermined position on the upper surface of the IC carrier, and a first sealing cavity is formed at a position not covered by the middle placement layer ， The radio frequency integrated circuit is located in the first sealed cavity.
3. The radio frequency antenna package structure of claim 1, wherein the IC carrier material is high-resistance silicon, glass, HTCC, LTCC, or Al 2 O 3 A ceramic material; the material of the middle placing layer is high-resistance silicon, glass, HTCC, LTCC and Al 2 O 3 A ceramic or a metallic material.
4. The radio frequency antenna package structure of claim 1, wherein the antenna cover plate material is high resistance silicon, glass, HTCC, LTCC, or Al 2 O 3 A ceramic material.
5. The radio frequency antenna package structure of claim 1, wherein the antenna structure is an all-metal material or a non-metal material with an outer covering metal layer.
6. The radio frequency antenna package structure of claim 1, wherein the lower surface of the IC carrier has solder joints in the form of BGA or QFN packages.
7. A method for preparing a radio frequency antenna package structure, which is used for preparing the radio frequency antenna package structure of any one of claims 1 to 6, comprising:
preparing an intermediate placing layer on the upper surface of the IC carrier plate, wherein the intermediate placing layer covers a preset position on the upper surface of the IC carrier plate, and an opening is formed at a position which is not covered by the intermediate placing layer;
fixing a radio frequency integrated circuit in the opening;
preparing an antenna structure on the upper surface of the antenna cover plate;
fixing the lower surface of the antenna cover plate with the antenna structure with the upper surface of the middle placement layer;
and preparing a welding point on the lower surface of the IC carrier plate.
8. The method for manufacturing a radio frequency antenna package structure of claim 7, wherein the step of preparing an intermediate placement layer on the upper surface of the IC carrier comprises:
by high-resistance silicon, glass, HTCC, LTCC, al 2 O 3 And preparing the middle placing layer on a preset position of the upper surface of the IC carrier plate by a ceramic or metal process.
9. The method for manufacturing an rf antenna package structure of claim 7, wherein the manufacturing the antenna structure on the upper surface of the antenna cover plate includes:
preparing an antenna structure made of an all-metal material on the upper surface of the antenna cover plate through multiple photoetching and plating processes;
or, welding the antenna structure made of the all-metal material to the upper surface of the antenna cover plate through a welding process;
or preparing the antenna structure inner core made of the non-metal material on the upper surface of the antenna cover plate through a 3D printing process, and preparing the antenna structure outside the antenna structure inner core made of the non-metal material through a plating process.
10. The method for manufacturing the rf antenna package structure of claim 7, wherein the fixing the lower surface of the antenna cover plate having the antenna structure to the upper surface of the middle placement layer comprises:
welding the lower surface of the antenna cover plate with the antenna structure on the upper surface of the middle placement layer through a welding process;
or bonding the lower surface of the antenna cover plate with the antenna structure on the upper surface of the middle placement layer through a wafer-level bonding process.
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| CN116895614A (en) * | 2023-07-25 | 2023-10-17 | 华南理工大学 | Millimeter wave system packaging structure integrated by three-dimensional isomerism |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116895614A (en) * | 2023-07-25 | 2023-10-17 | 华南理工大学 | Millimeter wave system packaging structure integrated by three-dimensional isomerism |
| CN116895614B (en) * | 2023-07-25 | 2024-03-29 | 华南理工大学 | Millimeter wave system packaging structure integrated by three-dimensional isomerism |
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