CN115717233A - Multi-mode low-temperature plasma metal surface film deposition device and method - Google Patents
Multi-mode low-temperature plasma metal surface film deposition device and method Download PDFInfo
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- CN115717233A CN115717233A CN202210394992.5A CN202210394992A CN115717233A CN 115717233 A CN115717233 A CN 115717233A CN 202210394992 A CN202210394992 A CN 202210394992A CN 115717233 A CN115717233 A CN 115717233A
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Abstract
The invention discloses a multimode low-temperature plasma metal surface film deposition device and a method, the multimode low-temperature plasma metal surface film deposition device comprises a synchronous transmission mechanism, a plurality of groups of first processing components and a plurality of groups of second processing components, wherein the first processing components comprise two direct dielectric barrier discharge components, the second processing components comprise two indirect dielectric barrier discharge components, the first processing components can be selected to be singly started to carry out direct dielectric barrier discharge treatment through the arrangement of the first processing components and the second processing components, so that the high-efficiency and rapid deposition treatment on a metal foil can be realized, the second processing components can be singly started to carry out indirect dielectric barrier discharge treatment, the first processing components and the second processing components can be simultaneously started, the first processing components are used for carrying out pretreatment operation on the metal foil, and then the second processing components are used for carrying out uniform deposition treatment.
Description
Technical Field
The invention belongs to the technical field of metal surface film treatment, and particularly relates to a multi-mode low-temperature plasma metal surface film deposition device and method.
Background
Thin film deposition is an industrially used technique for applying a thin coating layer to a specific design part made of a target material and imparting certain properties to the surface thereof, such as increased corrosiveness of metals and electrical properties of semiconductors. With the deep development of the modernization process, higher and higher requirements are put on the coating on the surface of the material. At present, the vacuum film deposition method which is frequently adopted mainly comprises a mechanical mixing method, a solid phase method, a hydrothermal method, a sol-gel method and a heterogeneous condensation method. Precipitation, microemulsion, sedimentation and the like.
1. The solid phase method has large energy consumption, low efficiency, and insufficiently fine powder, and is easy to mix with impurities;
2. the hydrothermal method requires high temperature and high pressure steps, so that the dependence on production equipment is stronger;
3. the raw materials used by the sol-gel method are expensive, some raw materials are organic matters, which are harmful to health, and the process needs a long time;
4. precipitation deoxidizers may remain in the coating, affecting the performance of the coating;
5. physical vapor deposition is divided into vacuum evaporation plating, vacuum sputtering plating and vacuum ion plating; the vacuum evaporation plating film and the substrate are not very tight in assembly, and in addition, the plating speed is low, and the diffraction performance is poor; the ionization rate of vacuum sputtering plating is low, and the bombardment of the substrate is not strong enough; in the vacuum ion plating, because of the high temperature at the electric arc and the impact of ionized particles, the electric arc ion plating is easy to generate a plurality of large particles, which seriously influences the coating quality; the thickness and the uniformity of the aerosol deposition coating are difficult to control, and raw materials required by chemical vapor deposition are flammable, explosive, toxic and environment-friendly; atomic layer deposition equipment is expensive;
6. the existing dielectric barrier discharge equipment for realizing the unilateral treatment of the metal surface thin film is a direct dielectric, has a narrow application range, does not have a good indirect treatment structure, and is not suitable for some treatment methods which need the mutual combination of the direct dielectric and the indirect dielectric.
Disclosure of Invention
The invention aims to provide a multi-mode low-temperature plasma metal surface film deposition device and a multi-mode low-temperature plasma metal surface film deposition method, which are used for solving the problems.
In order to achieve the purpose, the invention provides the following technical scheme: a multi-mode low-temperature plasma metal surface film deposition device comprises a synchronous conveying mechanism, a plurality of groups of first processing assemblies and a second processing assembly, wherein the first processing assemblies comprise two direct dielectric barrier discharge assemblies, and the second processing assemblies comprise two indirect dielectric barrier discharge assemblies;
the direct dielectric barrier discharge assembly comprises an electrode opening and closing mechanism, a gas flowmeter and a first electrode, wherein the gas flowmeter is fixedly arranged on the electrode opening and closing mechanism, the first electrode is fixedly arranged at the bottom of the electrode opening and closing mechanism, the first electrode is positioned on the surface of a metal film to be processed in a non-contact manner, the metal film to be processed is grounded, and generated plasma directly acts on the surface of the metal film to be processed;
the indirect dielectric barrier discharge assembly comprises an electrode opening and closing mechanism, a second electrode and a gas flowmeter, the gas flowmeter is fixedly arranged on the electrode opening and closing mechanism, the second electrode is fixedly arranged on one side, close to a metal to be processed, of the electrode opening and closing mechanism, high and low electrodes in the second electrode are arranged in parallel at intervals and are not in contact with the surface of the metal film to be processed, and plasma generated by a cavity between the high and low electrodes is sprayed on the surface of the metal film to be processed;
the inner sides of the direct dielectric barrier discharge assembly and the indirect dielectric barrier discharge assembly are provided with discharge rollers, and the two discharge rollers are different in size, so that the treatment time under different modes is adjusted, and the treatment effect is ensured.
Preferably, first electrode and second electrode all include a plurality of cylindrical solid tungsten-copper alloys, and many cylindrical solid tungsten-copper alloys of high pressure on the first electrode are linear permutation and set up, many cylindrical solid tungsten-copper alloys on the second electrode are linear permutation and set up and the crisscross setting of high-low pressure.
Preferably, the electrode opening and closing mechanism further comprises an air vent and a high-voltage lead, the air vent is arranged on the electrode opening and closing mechanism, the high-voltage lead is fixedly connected to the electrode opening and closing mechanism, and the high-voltage leads on the two electrode opening and closing mechanisms are respectively electrically connected with the first high-voltage nanosecond pulse power supply and the second high-voltage nanosecond pulse power supply.
The use method of the multi-mode low-temperature plasma metal surface film deposition device is characterized in that: the method comprises the following steps:
the method comprises the following steps: selecting an electrifying mode, wherein any one of three modes of only starting a high-voltage electrode in the first processing assembly to perform direct dielectric barrier discharge processing, only starting a second electrode in the second processing assembly to perform indirect dielectric barrier discharge processing, or simultaneously starting a first electrode and a second electrode in the first processing assembly and the second processing assembly to perform direct-indirect dielectric barrier discharge mixed processing can be selected;
step two: presetting the flow rate of gas, introducing working gas with set flow into a gas flowmeter at the first electrode or the second electrode to measure the flow rate of the working gas, and detecting that the flow rate reaches the preset flow rate;
step three:
(1) Direct dielectric barrier discharge treatment;
the method comprises the steps that after working gas formed by mixing discharge gas with set flow and film deposition medium gas is introduced to a high-voltage electrode, a synchronous conveying mechanism is started, metal to be processed is conveyed to a gap of the high-voltage electrode in a direct dielectric barrier discharge processing mechanism by the synchronous conveying mechanism, high-voltage current discharged by cylindrical solid tungsten-copper alloy of the high-voltage electrode and the metal to be processed are grounded by a discharge roller to realize common grounding, and discharge from top to bottom occurs, and during the period, the metal to be processed can be subjected to double-sided processing or single-sided processing by closing two processing assemblies;
(2) The indirect dielectric barrier discharge treatment is carried out, working gas formed by mixing discharge gas with set flow and thin film deposition medium gas is introduced into high-voltage and low-voltage staggered electrodes, a plurality of high-voltage electrode cylindrical solid tungsten-copper alloys on an electrode opening and closing mechanism in the indirect dielectric barrier discharge treatment mechanism are arranged in a high-voltage electrode and a low-voltage electrode in a staggered mode, discharge breakdown gas between the high-voltage and low-voltage electrodes generates low-temperature plasma, the plasma is blown out of a discharge area by using the gas blown out from a vent hole, the indirect dielectric barrier discharge treatment is carried out, and during the indirect dielectric barrier discharge treatment, double-group arrangement of a first treatment assembly and a second treatment assembly can be used for carrying out double-sided treatment on the metal to be processed and can also be used for carrying out single-sided treatment by closing two first high-voltage nanosecond pulse power supplies;
(3) The direct-indirect dielectric barrier discharge synchronous treatment is realized by firstly starting two groups of direct dielectric barrier discharge assemblies in the first treatment assembly to perform direct dielectric barrier discharge treatment on the front and back surfaces of the metal foil, then starting two groups of indirect dielectric barrier discharge treatment in the second treatment assembly and realizing the treatment of the front and back surfaces by utilizing the arrangement of the two groups of direct dielectric barrier discharge assemblies.
The invention has the technical effects and advantages that:
1. according to the invention, through the arrangement of the first treatment assembly and the second treatment assembly, the single-start first treatment assembly can be selected to carry out direct dielectric barrier discharge treatment, so that the metal foil can be efficiently and quickly subjected to deposition treatment, the single-start second treatment assembly can also be used for carrying out indirect dielectric barrier discharge treatment, the discharge is relatively uniform and is suitable for deeply cleaning and uniformly treating the metal to be processed, low-temperature plasma is generated through discharge breakdown gas between high-low voltage electrodes, the plasma is blown out of a discharge area by using an air pump and reaches the surface of the metal to be processed to be subjected to modification treatment, so that the uniform deposition treatment on the surface of the metal foil is realized, the first treatment assembly and the second treatment assembly can be simultaneously started, the first treatment assembly is used as a pretreatment operation for the metal foil, and then the second treatment assembly is used for uniform deposition treatment, so that the high-efficiency and uniform deposition treatment on the metal foil is realized, the integral invention can carry out multi-medium treatment, free transformation can be carried out according to requirements, under the treatment mode, the metal foil can be subjected to plasma treatment outside the discharge area, the treatment with relatively mild treatment, and is suitable for carrying out the indirect dielectric barrier discharge treatment on the low-strength, and the whole metal foil can also realize the indirect dielectric barrier discharge treatment of a direct dielectric barrier discharge treatment, and a direct dielectric barrier treatment effect of a low-medium and a direct dielectric barrier treatment process can be sequentially realized;
2. the direct dielectric barrier discharge assembly and the indirect dielectric barrier discharge assembly are respectively provided with a discharge guide roller at the inner sides, two discharge guide rollers with different diameters are arranged due to different required processing rates of direct dielectric barrier discharge and indirect dielectric barrier discharge, and the guide rollers with small front parts and large rear parts are adopted to ensure that the two discharge groups are in different processing rates, so that the processing time under different modes is adjusted, the processing effect is ensured, the applicability of the invention is increased, and the application range is improved.
Drawings
FIG. 1 is a schematic view of the structure of the present invention;
FIG. 2 is a schematic diagram of a direct dielectric barrier discharge device according to the present invention;
FIG. 3 is a schematic view of an indirect dielectric barrier discharge assembly according to the present invention;
FIG. 4 is a schematic view of an electrode opening and closing mechanism according to the present invention;
fig. 5 is a flow chart of the operation of the present invention.
In the figure: 1. a synchronous transport mechanism; 2. an electrode opening and closing mechanism; 201. a cylindrical solid tungsten copper alloy; 203. a high-voltage wire; 204. a vent hole; 3. a first electrode; 4. a first high voltage nanosecond pulsed power supply; 5. a second high voltage nanosecond pulsed power supply; 6. a gas flow meter; 7. a first processing assembly; 8. a second processing assembly; 9. a second electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a multi-mode low-temperature plasma metal surface film deposition device as shown in figures 1, 2 and 4, which comprises a synchronous conveying mechanism 1, a plurality of groups of first processing assemblies 7 and second processing assemblies 8, wherein the first processing assemblies 7 comprise two direct dielectric barrier discharge assemblies, and the second processing assemblies 8 comprise two indirect dielectric barrier discharge assemblies;
the direct dielectric barrier discharge assembly comprises an electrode opening and closing mechanism 2, a gas flowmeter 6 and a first electrode 3, wherein the gas flowmeter 6 is fixedly arranged on the electrode opening and closing mechanism 2, the first electrode 3 is fixedly arranged at the bottom of the electrode opening and closing mechanism 2, the first electrode 3 is not in contact with the surface of a metal film to be treated, the metal film to be treated is grounded, generated plasma is sprayed to the surface of the metal film to be treated, the first electrode 3 and a second electrode 9 both comprise a plurality of cylindrical solid tungsten-copper alloys 201, a plurality of high-voltage cylindrical solid tungsten-copper alloys on the first electrode 3 are arranged in a linear array, and a plurality of cylindrical solid tungsten-copper alloys on the second electrode 9 are arranged in a linear array in a high-low voltage staggered manner;
the indirect dielectric barrier discharge assembly comprises an electrode opening and closing mechanism 2, a second electrode 9 and a gas flowmeter 6, wherein the gas flowmeter 6 is fixedly arranged on the electrode opening and closing mechanism 2, the second electrode 9 is fixedly arranged on one side, close to a metal to be processed, of the electrode opening and closing mechanism 2, high and low electrodes in the second electrode 9 are arranged in parallel at intervals and are not in contact with the surface of the metal film to be processed, plasma generated by a cavity between the high and low electrodes directly acts on the surface of the metal film to be processed, the electrode opening and closing mechanism 2 further comprises a vent hole 204 and a high-voltage lead 203, the vent hole 204 is arranged on the electrode opening and closing mechanism 2, the high-voltage lead 203 is fixedly connected to the electrode opening and closing mechanism 2, and the high-voltage leads 203 on the two electrode opening and closing mechanisms 2 are electrically connected with a first high-voltage nanosecond pulse power supply 4 and a second high-voltage nanosecond pulse power supply 5 respectively;
the inner sides of the direct dielectric barrier discharge assembly and the indirect dielectric barrier discharge assembly are provided with discharge rollers, and the two discharge rollers are different in size, so that the treatment time under different modes is adjusted, and the treatment effect is ensured.
As shown in fig. 1, 2, 3, 4 and 5, a method for using a multimode low-temperature plasma metal surface thin film deposition device is characterized in that: the method comprises the following steps:
the method comprises the following steps: selecting an electrifying mode, and selecting any one of three modes of only starting the high-voltage electrode 3 in the first processing assembly 7 for direct dielectric barrier discharge treatment, or only starting the second electrode 9 in the second processing assembly 8 for indirect dielectric barrier discharge treatment, or simultaneously starting the first electrode 3 and the second electrode 9 in the first processing assembly 7 and the second processing assembly 8 for direct-indirect dielectric barrier discharge mixed treatment;
step two: presetting the flow rate of gas, introducing working gas with set flow into a gas flowmeter at the first electrode 3 or the second electrode 9 to measure the flow rate of the working gas, and detecting that the flow rate reaches the preset flow rate;
step three:
(1) Direct dielectric barrier discharge treatment;
after working gas formed by mixing discharge gas with set flow and thin film deposition medium gas is introduced to a high-voltage electrode 3, a synchronous conveying mechanism 1 is started, the metal to be processed is conveyed to a gap of the high-voltage electrode 3 in a direct dielectric barrier discharge processing mechanism by the synchronous conveying mechanism 1, high-voltage current discharged by a cylindrical solid tungsten-copper alloy 201 of the high-voltage electrode and the metal to be processed are grounded by a discharge roller to realize common grounding, and discharge from top to bottom occurs, and during the period, the metal to be processed can be subjected to double-sided processing or single-sided processing by closing two processing assemblies 5 through the double-group arrangement of a first processing assembly 7 and a second processing assembly 8;
(2) The indirect dielectric barrier discharge treatment is carried out, working gas formed by mixing discharge gas with set flow and thin film deposition medium gas is introduced into high-voltage and low-voltage staggered electrodes, a plurality of high-voltage electrode cylindrical solid tungsten-copper alloys 201 on an electrode opening and closing mechanism 2 in the indirect dielectric barrier discharge treatment mechanism are arranged in a high-voltage electrode and low-voltage electrode staggered mode, low-temperature plasma is generated by discharge breakdown gas between the high-voltage and low-voltage electrodes, the plasma is blown out of a discharge area by utilizing gas blown out by a vent hole 204, the indirect dielectric barrier discharge treatment is carried out, and during the process, double-group arrangement of a first treatment assembly 7 and a second treatment assembly 8 can be used for carrying out double-sided treatment on metal to be processed and can also be used for carrying out single-sided treatment by closing two first high-voltage nanosecond pulse power supplies 4;
(3) The direct-indirect dielectric barrier discharge synchronous processing is realized by firstly starting two groups of direct dielectric barrier discharge assemblies in the first processing assembly 7 to perform direct dielectric barrier discharge processing on the front and back surfaces of the metal foil, then starting two groups of indirect dielectric barrier discharge processing in the second processing assembly 8 and realizing the processing of the front and back surfaces by using the arrangement of the two groups of direct dielectric barrier discharge assemblies.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (4)
1. A multi-mode low-temperature plasma metal surface film deposition device is characterized in that: the device comprises a synchronous conveying mechanism (1), a plurality of groups of first processing assemblies (7) and second processing assemblies (8), wherein the first processing assemblies (7) comprise two direct dielectric barrier discharge assemblies, and the second processing assemblies (8) comprise two indirect dielectric barrier discharge assemblies;
the direct dielectric barrier discharge assembly comprises an electrode opening and closing mechanism (2), a gas flowmeter (6) and a first electrode (3), wherein the gas flowmeter (6) is fixedly arranged on the electrode opening and closing mechanism (2), the first electrode (3) is fixedly arranged at the bottom of the electrode opening and closing mechanism (2), the first electrode (3) is not in contact with the surface of a metal film to be processed, the metal film to be processed is grounded, and generated plasma directly acts on the surface of the metal film to be processed;
the indirect dielectric barrier discharge assembly comprises an electrode opening and closing mechanism (2), a second electrode (9) and a gas flowmeter (6), wherein the gas flowmeter (6) is fixedly arranged on the electrode opening and closing mechanism (2), the second electrode (9) is fixedly arranged on one side, close to a metal to be processed, of the electrode opening and closing mechanism (2), high and low electrodes in the second electrode (9) are arranged in parallel at intervals, are not in contact with the surface of the metal film to be processed, and plasma generated by a cavity between the high and low electrodes is sprayed on the surface of the metal film to be processed.
2. A multimode low temperature plasma metal surface film deposition apparatus according to claim 1, wherein; first electrode (3) and second electrode (9) all include a plurality of cylindrical solid tungsten copper alloy (201), and many high-pressure cylindrical solid tungsten copper alloy on first electrode (3) are linear permutation and set up, many cylindrical solid tungsten copper alloy on second electrode (9) are linear permutation and set up and the crisscross setting of high-low pressure, and direct dielectric barrier discharge subassembly and indirect dielectric barrier discharge subassembly inboard all are provided with the deflector roll that discharges, and two deflector roll diameters that discharge are not of uniform size.
3. A multi-mode low-temperature plasma metal surface film deposition apparatus according to claim 1, wherein: the electrode opening and closing mechanism (2) further comprises an air vent (204) and a high-voltage lead (203), the air vent (204) is arranged on the electrode opening and closing mechanism (2), the high-voltage lead (203) is fixedly connected to the electrode opening and closing mechanism (2) and the high-voltage leads (203) on the two electrode opening and closing mechanisms (2) are respectively electrically connected with the first high-voltage nanosecond pulse power supply (4) and the second high-voltage nanosecond pulse power supply (5).
4. The use method of the multi-mode low-temperature plasma metal surface film deposition device according to claim 1, characterized in that: the method comprises the following steps:
the method comprises the following steps: selecting an electrifying mode, and selecting any one of three modes of starting only a high-voltage electrode (3) in a first processing assembly (7) for direct dielectric barrier discharge treatment, or starting only a second electrode (9) in a second processing assembly (8) for indirect dielectric barrier discharge treatment, or starting the first electrode (3) and the second electrode (9) in the first processing assembly (7) and the second processing assembly (8) at the same time for direct-indirect dielectric barrier discharge mixed treatment;
step two: presetting the flow rate of gas, introducing working gas with set flow into a gas flowmeter at the first electrode (3) or the second electrode (9) to measure the flow rate of the working gas, and detecting that the flow rate reaches the preset flow rate;
step three:
(1) Direct dielectric barrier discharge treatment;
after working gas formed by mixing discharge gas with set flow and film deposition medium gas is introduced into a high-voltage electrode (3), a synchronous conveying mechanism (1) is started, metal to be processed is conveyed into a gap of the high-voltage electrode (3) in a direct dielectric barrier discharge processing mechanism by the synchronous conveying mechanism (1), high-voltage current discharged by a cylindrical solid tungsten-copper alloy (201) of the high-voltage electrode and the metal to be processed are grounded by a discharge roller to realize common grounding, and discharge from top to bottom occurs, and in the period, the metal to be processed can be subjected to double-sided processing and also can be subjected to single-sided processing by closing two processing assemblies (5) through the double-group arrangement of a first processing assembly (7) and a second processing assembly (8);
(2) The indirect dielectric barrier discharge treatment is carried out, working gas formed by mixing discharge gas with set flow and thin film deposition medium gas is introduced into high-voltage and low-voltage staggered electrodes, a plurality of high-voltage electrode cylindrical solid tungsten-copper alloys (201) on an electrode opening and closing mechanism (2) in the indirect dielectric barrier discharge treatment mechanism are arranged in a high-voltage electrode and low-voltage electrode staggered mode, discharge breakdown gas between the high-voltage and low-voltage electrodes generates low-temperature plasma, the plasma is blown out of a discharge area by utilizing the gas blown out by a vent hole (204) to carry out indirect dielectric barrier discharge treatment, and during the process, double-group arrangement of a first treatment assembly (7) and a second treatment assembly (8) can carry out double-sided treatment on metal to be processed and can also carry out single-sided treatment by closing two first high-voltage nanosecond pulse power supplies (4);
(3) The direct-indirect dielectric barrier discharge synchronous treatment is realized by firstly starting two groups of direct dielectric barrier discharge assemblies in the first treatment assembly (7) to carry out direct dielectric barrier discharge pretreatment on the front and back surfaces of the metal foil, then starting two groups of indirect dielectric barrier discharge treatment in the second treatment assembly (8) and realizing film deposition treatment on the front and back surfaces by utilizing the arrangement of the two groups.
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