CN115716130A - Surface nanocrystallization method for refractory metal tungsten - Google Patents
Surface nanocrystallization method for refractory metal tungsten Download PDFInfo
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- CN115716130A CN115716130A CN202211434468.2A CN202211434468A CN115716130A CN 115716130 A CN115716130 A CN 115716130A CN 202211434468 A CN202211434468 A CN 202211434468A CN 115716130 A CN115716130 A CN 115716130A
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 81
- 239000010937 tungsten Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000003870 refractory metal Substances 0.000 title claims abstract description 10
- 238000007709 nanocrystallization Methods 0.000 title abstract description 16
- 238000005498 polishing Methods 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000002344 surface layer Substances 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 47
- 238000000137 annealing Methods 0.000 claims description 12
- 244000137852 Petrea volubilis Species 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000002932 luster Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 13
- 230000005855 radiation Effects 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 11
- 239000011159 matrix material Substances 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000002052 molecular layer Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 239000002159 nanocrystal Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 238000003917 TEM image Methods 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- -1 helium ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
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- Powder Metallurgy (AREA)
Abstract
The invention belongs to the technical field of material surface treatment, and particularly relates to a surface nanocrystallization method of refractory metal tungsten. The invention adopts the method of combining mechanical polishing with vacuum heat treatment to form a fine nanocrystalline layer on the surface of the tungsten with a coarse crystal substrate, has simple process, short time consumption, low energy consumption and reliable repeatability, and can realize batch treatment. High-density dislocation can be introduced into the near surface layer of the coarse-grain tungsten in the metallographic polishing process, the dislocation is in a thermodynamic metastable state, and the dislocation is recovered in the subsequent vacuum heat treatment process to form stable nanocrystalline, wherein the grain size is 200-400 nm, and the thickness of the surface nano layer is 200-400 nm. And no obvious interface exists between the nanocrystalline layer and the matrix structure, so that the nanocrystalline layer is not easy to strip and separate, and the radiation resistance of the tungsten material is expected to be further improved.
Description
Technical Field
The invention belongs to the technical field of material surface nanocrystallization, and relates to a method for nanocrystallizing the surface of refractory metal tungsten.
Background
Metal tungsten (W) is widely used as a nuclear radiation shielding material, for example, a first wall material facing plasma of a fusion reactor, due to its characteristics of high melting point, high thermal conductivity, high radiation sputtering threshold resistance, and the like. Although tungsten-based materials have been widely used, their radiation resistance is still to be further improved.
The nano structure can obviously improve the radiation resistance of the material, for example, the nano-scale grain boundary is used as a capture site of the radiation defect, the radiation defect can be effectively absorbed and dispersed, and the aggregation of the radiation defect is reduced, so that the generation of large-size defect clusters such as cavities, bubbles and the like is inhibited, and the radiation resistance of the material is further improved. However, the method of powder sintering from bottom to top is usually adopted for industrial production of pure tungsten, and is limited by coarse initial raw material powder and further coarsening of grain size in the subsequent high-temperature sintering process, and the grain size of the currently prepared tungsten material is usually in the range of several microns to hundreds of microns, so that the improvement of the radiation resistance of the material is severely restricted. Therefore, there is a need to develop a treatment technique for surface nanocrystallization of tungsten material.
Chinese patent document No. CN108456854A, "a device and method for nanocrystallization of metal tungsten surface", discloses a technical scheme: by ionizing helium gas, obtaining low-voltage and high-current helium plasma, and enabling helium ions to bombard and act on the surface of a tungsten sample, a nano structure can be obtained on the surface of tungsten after helium ions with a certain dosage are injected. Although the nano structure is obtained on the tungsten surface, the fluffy nano fluff structure is formed, and the nano tungsten fluff also contains 'helium bubbles', so that the bonding strength with a matrix is not enough. In addition, chinese patent document No. CN103484806A, "a tungsten-copper alloy surface nanocrystallization method", discloses a technical scheme: the tungsten-copper alloy is placed in a supersonic particle bombardment device for surface nano treatment, and a nano crystal layer with the thickness of 0.3-1.2 mm can be obtained after the treatment. The patented technique is to bombard the tungsten surface with high energy hard particles, thereby breaking down the macrocrystalline tungsten to obtain nanosized tungsten grains, which does achieve the purpose of nanocrystallization, but also introduces other defects, such as high density dislocations, which are thermodynamically metastable, i.e., are significantly destabilized at high temperatures, thereby resulting in significant recrystallization and grain coarsening. Therefore, to obtain a surface nanolayer which is thermodynamically stable and tightly bonded to the substrate, further development of corresponding tungsten surface nanocrystallization technology is required.
Disclosure of Invention
One of the purposes of the invention is to provide a method for realizing the nanocrystallization of the surface, which is simple and feasible, aiming at the problems of insufficient radiation resistance and the like of the existing coarse-grained tungsten material.
In order to realize the purpose, the invention adopts the following technical scheme: a method for nanocrystallizing the surface of refractory metal tungsten comprises the following steps:
s1, polishing the surface of coarse-grained tungsten particles, and removing an oxide layer to obtain a flat metal luster surface;
s2, mechanically polishing the surface of the ground coarse-grain tungsten particles under a set pressure, removing scratches to obtain a mirror-polished surface, and cleaning the surface;
s3, placing the cleaned coarse-grain tungsten particles in a vacuum tube furnace for annealing heat treatment, wherein the annealing temperature is 900-1100 ℃, the heating rate is 5-10 ℃/min, the heat preservation time is 1-2 hours, and the vacuum degree is superior to 5 multiplied by 10 -3 Pa, forming a nano surface layer in the range from the surface of the coarse-crystal tungsten particles to the distance of 200-400 nm from the surface, wherein the grain size is 200-400 nm.
The treatment method for the surface nanocrystallization of the refractory metal tungsten is further improved:
preferably, the size of the mother crystal in the coarse-crystal tungsten particles is larger than 10 μm, and the size of the sub-crystal is larger than 1 μm.
Preferably, in step S1, the surface of the macrocrystalline tungsten particles is ground using sandpaper having a mesh number of 400 to 2000.
Preferably, when the surfaces of the macrocrystalline tungsten particles are ground by using the sand paper in step S1, the mesh number of the sand paper is increased in sequence.
Preferably, the sand paper is SiC sand paper, and when the SiC sand paper is used for grinding the surfaces of the coarse-grained tungsten particles, the mesh number of the SiC sand paper is increased in a gradient manner.
Preferably, the wet flannelette is coated with polishing paste in step S2, and a pressure of 5 to 50N is applied to polish the surface of the macrocrystalline tungsten particles, wherein the mesh number of the polishing medium in the polishing paste is 4000 to 10000.
Preferably, the coarse-grained tungsten particles are polished by using polishing pastes with sequentially increasing mesh numbers of polishing media.
Preferably, in the step S2, the applied pressure is sequentially reduced during the polishing of the surface of the coarse-grained tungsten particles.
Preferably, the polishing medium is made of diamond.
Preferably, in the step S2, the applied pressure is reduced in a gradient manner during the polishing of the surface of the coarse-grained tungsten particles, and the polishing time is 20-30 minutes at each pressure, and finally, the scratch is completely removed to obtain a smooth surface.
Compared with the prior art, the invention has the beneficial effects that:
1) The invention adopts a method of combining mechanical polishing with vacuum heat treatment to form a fine nanocrystalline layer on the surface of tungsten with a coarse crystal matrix.
In the prior art, grinding and polishing are only used for removing an oxide layer, oil stains and the like as cleaning functions. The mechanical polishing by applying stress is adopted to introduce high-density dislocation into the near surface layer of the coarse-grain tungsten, the dislocation is in a thermodynamic metastable state, and is recovered in the subsequent high-temperature 900-1100 ℃ vacuum annealing and vacuum heat treatment process to drive dislocation rearrangement and evolution into compact nano-crystals. The whole process realizes the surface nanocrystallization by introducing dislocation and then regulating and controlling the dislocation, and has the following two superior effects: firstly, dislocation belongs to the defect of a tungsten matrix, and a nanocrystalline formed by prefabricating dislocation and recovering dislocation is tightly combined with the tungsten matrix without forming a heterogeneous interface, so that the bonding strength of the nanocrystalline layer and the matrix is high; secondly, the dislocation belongs to a thermodynamic metastable structure, and the dislocation is recovered through high-temperature annealing to form the nanocrystal, which belongs to a thermodynamic adaptation process, so that the formed nanocrystal has higher thermal stability. The finally constructed stable surface nanocrystalline layer is expected to improve the radiation resistance of the material.
According to the method, dislocation is introduced firstly, and then dislocation rearrangement is regulated to form a surface nanocrystalline layer, so that the introduced dislocation density and the like can be influenced by the size of an initial mother crystal and a sub-crystal. The size of the mother crystal in the coarse-crystal tungsten particles is larger than 10 mu m, and the size of the sub-crystal is larger than 1 mu m, so that dislocation is favorably introduced.
2) Chinese patent publication No. CN108570703A, "tungsten/copper layered composite material preparation method based on tungsten sheet surface nanocrystallization", discloses a method of nanocrystallization on a tungsten sheet surface by anodic oxidation, which actually converts tungsten into fluffy tungsten oxide first, and then converts tungsten oxide into tungsten of a nano-porous structure by hydrogen reduction in the third step. The steamer process is a chemical reaction process: tungsten (oxidized) → fluffy tungsten oxide (reduced) → porous tungsten. This is quite different from the technical principle of the present application described above.
The invention adopts simple two-step mechanical polishing and vacuum heat treatment, has simple process, short time consumption and low energy consumption, has reliable repeatability and can realize batch treatment.
Drawings
FIG. 1 is a scanning electron micrograph of the products of examples 1-3, wherein FIGS. 1 (a) and 1 (b) are a top view and a cross-sectional side view, respectively, of a scanning electron micrograph of a surface nanocrystal layer in example 1; FIGS. 1 (c) and 1 (d) are a top view and a cross-sectional side view, respectively, of a scanning electron micrograph of a surface nanocrystal layer in example 2; FIGS. 1 (e) and 1 (f) are a top view and a cross-sectional side view, respectively, of a scanning electron micrograph of a surface nanocrystal layer in example 3.
Fig. 2 is a transmission electron micrograph of the surface nanocrystals obtained in example 1, in which fig. 2 (a) is a transmission electron micrograph, fig. 2 (b) is a subgrain boundary high-resolution image, and fig. 2 (c) is a distribution of dislocations at the subgrain boundaries.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to embodiments, and all other embodiments obtained by a person of ordinary skill in the art without any creative effort based on the embodiments of the present invention belong to the protection scope of the present invention.
Example 1
The embodiment provides a method for nanocrystallizing the surface of refractory metal tungsten, which specifically comprises the following steps:
s1, taking macrocrystalline tungsten particles with the size of 20mm (length) multiplied by 20mm (width) multiplied by 2mm (thickness), sequentially polishing the surfaces of the macrocrystalline tungsten particles by using SiC abrasive paper with the specifications of 400 meshes, 800 meshes, 1200 meshes and 2000 meshes, and removing a surface oxidation layer to obtain a flat metal luster surface;
s2, coating polishing paste with the particle size W2.5 (the mesh number is 4000) on the wet flannelette, applying 50N pressure, and polishing the surface of the coarse-grain tungsten particles for 30 minutes; then changing into polishing paste with the granularity W0.5 (the mesh number is 10000 meshes), sequentially applying 20N, 10N and 5N pressure to polish for 30 minutes, and finally cleaning with ethanol to obtain coarse-grained tungsten particles with mirror polished surfaces;
s3, then placing the cleaned coarse-grain tungsten particles in a vacuum tube furnace, raising the temperature to 900 ℃ by utilizing the temperature raising rate of 10 ℃/min, preserving the heat for 2 hours at the temperature, and keeping the vacuum degree at 5 multiplied by 10 in the whole annealing process -3 And Pa, annealing to obtain a surface nanocrystalline layer, and realizing surface nanocrystallization.
Example 2
The embodiment provides a method for nanocrystallizing the surface of refractory metal tungsten, which specifically comprises the following steps:
s1, taking macrocrystalline tungsten particles with the size of 20mm (length) multiplied by 20mm (width) multiplied by 2mm (thickness), sequentially using SiC sand paper with the specifications of 400 meshes, 800 meshes, 1200 meshes and 2000 meshes to polish the surfaces of the macrocrystalline tungsten particles, and removing a surface oxide layer to obtain a flat metal luster surface;
s2, coating polishing paste with the particle size W2.5 (the mesh number is 4000) on the wet flannelette, applying 50N pressure, and polishing the surface of the coarse-grain tungsten particles for 30 minutes; then changing the W to be 0.5 (with the mesh number of 10000 meshes) polishing paste for polishing, sequentially applying 20N, 10N and 5N pressure to polish for 30 minutes respectively, and finally cleaning by using ethanol to obtain rough-grained tungsten particles with mirror polished surfaces;
s3, then placing the cleaned coarse-grain tungsten particles in a vacuum tube furnace, raising the temperature to 1100 ℃ by utilizing the temperature raising rate of 10 ℃/min, and preserving the heat for 1 hour at the temperature, wherein the vacuum degree is kept at 5 multiplied by 10 in the whole annealing process -3 Pa above, annealing to obtain a surface nanocrystalline layer, and realizing surface nanocrystallization.
Example 3
The embodiment provides a method for nanocrystallizing the surface of refractory metal tungsten, which specifically comprises the following steps:
s1, taking macrocrystalline tungsten particles with the size of 20mm (length) multiplied by 20mm (width) multiplied by 2mm (thickness), and sequentially polishing the surfaces of the macrocrystalline tungsten particles by using SiC abrasive paper with the specifications of 400 meshes, 800 meshes, 1200 meshes and 2000 meshes to obtain a flat metal luster surface;
s2, coating polishing paste with the particle size W2.5 (the mesh number is 4000) on the wet flannelette, applying 50N pressure, and polishing the surface of the coarse-grain tungsten particles for 30 minutes; then changing the grain size W to 0.5 (with the mesh number of 10000 meshes) polishing paste for polishing, sequentially applying 20N, 10N and 5N pressure to polish for 30 minutes, and finally cleaning with ethanol to obtain rough-grained tungsten particles with mirror polished surfaces;
s3, then placing the cleaned coarse-grain tungsten particles in a vacuum tube furnace, raising the temperature to 1000 ℃ by utilizing the temperature rise rate of 5 ℃/min, preserving the heat for 1 hour at the temperature, and keeping the vacuum degree at 5 multiplied by 10 in the whole annealing process -3 And Pa, annealing to obtain a surface nanocrystalline layer, and realizing surface nanocrystallization.
To further verify that the formation of surface nanocrystals resulted from dislocation recovery, we performed transmission electron microscopy characterization on the products of examples 1-3, and fig. 1 is a scanning electron microscopy characterization of the products of examples 1-3, in which fig. 1 (a) and 1 (b) are a top view and a cross-sectional side view, respectively, of a scanning electron microscopy of a surface nanocrystal layer in example 1; FIGS. 1 (c) and 1 (d) are a top view and a cross-sectional side view, respectively, of a scanning electron micrograph of a surface nanocrystal layer in example 2; FIGS. 1 (e) and 1 (f) are a top view and a cross-sectional side view, respectively, of a scanning electron micrograph of a surface nanocrystal layer in example 3. As can be seen from FIG. 1, a densified rather than villus structured nano-sized surface layer is obtained on the coarse-grained tungsten particles within a range of 200 to 400nm from the surface, with a grain size of 200 to 400nm.
FIG. 2 is a representative TEM image of the product of example 1, wherein FIG. 2 (a) is a TEM bright field image, FIG. 2 (b) is a subgrain boundary high resolution image, and FIG. 2 (c) is the distribution of dislocations at the subgrain boundaries. The result shows that the nanocrystalline grain boundary formed on the surface is small-angle subgrain, which proves that the nanocrystalline grain boundary is formed by cellular structures formed by dislocation recovery and evolves, and the cellular structures no longer contain thermodynamically unstable high-density dislocation and are more stable at high temperature.
It should be understood by those skilled in the art that the foregoing is only illustrative of several embodiments of the invention, and not of all embodiments. It should be noted that many variations and modifications are possible to those skilled in the art, and all variations and modifications that do not depart from the gist of the invention are intended to be within the scope of the invention as defined in the appended claims.
Claims (10)
1. A method for nanocrystallizing the surface of refractory metal tungsten is characterized by comprising the following steps of:
s1, polishing the surfaces of coarse-grain tungsten particles, and removing an oxide layer to obtain a flat metal luster surface;
s2, mechanically polishing the surface of the ground coarse-grain tungsten particles under a set pressure, removing scratches to obtain a mirror-polished surface, and cleaning the surface;
s3, placing the cleaned coarse-grain tungsten particles in a vacuum tube furnace for annealing heat treatment, wherein the annealing temperature is 900-1100 ℃, the heating rate is 5-10 ℃/min, the heat preservation time is 1-2 hours, and the vacuum degree is superior to 5 multiplied by 10 -3 Pa, forming a nano surface layer in the range from the surface of the coarse-crystal tungsten particles to the distance of 200-400 nm from the surface, wherein the grain size is 200-400 nm.
2. The method of claim 1, wherein the size of the mother crystal in the macrocrystalline tungsten particles is greater than 10 μm, and the size of the sub-crystal in the macrocrystalline tungsten particles is greater than 1 μm.
3. The method as claimed in claim 1, wherein in step S1, the surface of the coarse tungsten particles is polished by sand paper with a mesh size of 400-2000.
4. The method as claimed in claim 3, wherein the mesh number of the sand paper used in step S1 is increased when the sand paper is used to polish the surface of the coarse-grained tungsten particles.
5. The method of claim 4, wherein the abrasive paper is SiC abrasive paper, and the mesh number of the SiC abrasive paper is increased in a gradient manner when the SiC abrasive paper is used for polishing the surfaces of coarse-grained tungsten particles.
6. The method as claimed in claim 1, wherein step S2 comprises coating a polishing paste on the wet flannelette, and applying a pressure of 5-50N to polish the surface of the coarse-grained tungsten particles, wherein the mesh number of the polishing medium in the polishing paste is 4000-10000.
7. The method as claimed in claim 6, wherein the coarse tungsten particles are polished by using polishing pastes with sequentially increasing meshes.
8. The method as claimed in claim 1 or 6, wherein the pressure applied in step S2 is reduced in sequence during the polishing of the surface of the coarse-grained tungsten particles.
9. The method as claimed in claim 6, wherein the polishing medium is made of diamond.
10. The method as claimed in claim 8, wherein the step S2 of polishing the surface of the coarse-grained tungsten particles is performed by gradually decreasing the applied pressure, and the polishing time is 20-30 minutes for each pressure, so as to completely remove the scratches and obtain a smooth surface.
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|---|---|---|---|---|
| CN101260556A (en) * | 2007-12-14 | 2008-09-10 | 哈尔滨工业大学 | Method for increasing light alloy micro-arc oxidation coat endurance life |
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| CN103789802A (en) * | 2014-02-28 | 2014-05-14 | 西安交通大学 | Electrosilvering method after copper base surface nanocrystallization processing |
| US20170183537A1 (en) * | 2014-08-26 | 2017-06-29 | K.C. Tech Co., Ltd | Polishing slurry composition |
| CN109396965A (en) * | 2018-11-12 | 2019-03-01 | 攀枝花学院 | Surface Multi-scale model tungsten material and preparation method thereof |
-
2022
- 2022-11-16 CN CN202211434468.2A patent/CN115716130A/en active Pending
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|---|---|---|---|---|
| CN101260556A (en) * | 2007-12-14 | 2008-09-10 | 哈尔滨工业大学 | Method for increasing light alloy micro-arc oxidation coat endurance life |
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| CN103789802A (en) * | 2014-02-28 | 2014-05-14 | 西安交通大学 | Electrosilvering method after copper base surface nanocrystallization processing |
| US20170183537A1 (en) * | 2014-08-26 | 2017-06-29 | K.C. Tech Co., Ltd | Polishing slurry composition |
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| Title |
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| 周瑞发等: "高技术新材料使用性能导论", 30 April 2009, 国防工业出版社, pages: 328 * |
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