CN115712229A - Processing method of wafer surface photoresist and semiconductor equipment - Google Patents
Processing method of wafer surface photoresist and semiconductor equipment Download PDFInfo
- Publication number
- CN115712229A CN115712229A CN202211470617.0A CN202211470617A CN115712229A CN 115712229 A CN115712229 A CN 115712229A CN 202211470617 A CN202211470617 A CN 202211470617A CN 115712229 A CN115712229 A CN 115712229A
- Authority
- CN
- China
- Prior art keywords
- photoresist layer
- wafer body
- photoresist
- wafer
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 188
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000003672 processing method Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000006243 chemical reaction Methods 0.000 claims abstract description 65
- 230000003213 activating effect Effects 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 111
- 239000007789 gas Substances 0.000 claims description 47
- 238000005530 etching Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000012495 reaction gas Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 7
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 238000001994 activation Methods 0.000 description 10
- 230000004913 activation Effects 0.000 description 9
- -1 oxygen ions Chemical class 0.000 description 7
- 230000035484 reaction time Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The embodiment of the invention provides a method for processing a photoresist on the surface of a wafer and semiconductor equipment, and relates to the technical field of semiconductors, wherein the method comprises the steps of firstly, placing a wafer body with a photoresist layer attached to the surface in a reaction cavity; then carrying out preheating treatment on the wafer body to keep the temperature of the wafer body consistent with that of the interior of the reaction cavity, activating the upper surface of the photoresist layer attached to the surface of the wafer body by using plasma, and removing the activated part of the upper surface of the photoresist layer attached to the surface of the wafer body; and sequentially circulating the preheating step to the removing step until a photoresist layer with a preset thickness is left on the surface of the wafer body. Compared with the prior art, the embodiment of the invention uses the activated gas to ionize and then bombard the photoresist layer before removing the photoresist layer, so that the surface of the photoresist layer is activated, the surface flatness after removing the photoresist is better, the uniformity of the residual photoresist layer is greatly improved, and the subsequent process is facilitated.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for processing a photoresist on a wafer surface and semiconductor equipment.
Background
In the process of manufacturing semiconductor devices, especially when the devices become finer and finer, the processes of deposition, photolithography, exposure, etching, photoresist removal and the like need to be repeated, and thousands of processes are repeated. Therefore, photoresist removal is particularly important, and when the photoresist is not required to be completely removed in the back-end process, it is desirable that the photoresist surface of the whole wafer is kept sufficiently consistent, so as to minimize the influence on the connection of the back-end process devices and the like. Therefore, strict requirements are required for the stripping process, including stripping rate, uniformity, etc.
Most of the existing common photoresist removing processes use oxygen for removing photoresist, and the oxygen forms plasma containing oxygen ions through radio frequency power, so that the long-chain hydrocarbon cross-linked compound photoresist is damaged to form a short-chain cross-linked compound, and the short-chain hydrocarbon cross-linked compound reacts with the photoresist on the wafer to achieve the photoresist removing effect. The prior reaction rate is low, and particularly under the low-temperature condition, the dissociated oxygen ions have low energy and low activation energy and are slow to react with the photoresist; and the energy of the oxygen ions is reduced by collision with other oxygen at low temperature, and the two interact with each other on the photoresist which is softly baked in a single direction, so that the uniformity of the residual photoresist after the photoresist is removed at low temperature is lower, generally more than 7%.
Disclosure of Invention
The present invention provides a method for processing a photoresist on a wafer surface and a semiconductor device, which can improve the uniformity of the photoresist after stripping, so that the surface flatness after stripping is better.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a method for processing a photoresist on a wafer surface, comprising:
a wafer body placing step, namely placing the wafer body with the photoresist layer attached to the surface in a reaction cavity;
a preheating step, in which a wafer body with a photoresist layer attached to the surface is subjected to preheating treatment so as to keep the temperature of the wafer body consistent with that of the interior of the reaction chamber;
activating the upper surface layer of the photoresist layer attached to the surface of the wafer body by using plasma;
a removing step of removing the activated part of the upper surface of the photoresist layer attached to the surface of the wafer body;
and sequentially circulating the preheating treatment step to the removing step until a photoresist layer with a preset thickness is left on the surface of the wafer body.
Further, the step of activating the upper surface layer of the photoresist layer attached to the surface of the wafer body by using plasma comprises the following steps:
introducing an activating gas into the reaction cavity, wherein the activating gas is an inert gas with the flow of 800sccm or a hydrogen-nitrogen mixed gas, and the pressure of the reaction cavity is 1.1T;
ionizing the activated gas at 700W energy to form the plasma;
and bombarding the upper surface of the photoresist layer by using the plasma, wherein the bombardment time is 30S each time.
Further, the activation gas includes at least one gas of H2, N2, ar, cxFy, SF6, NF3, he, N2O.
Further, the step of removing the activated portion of the upper surface of the photoresist layer attached to the surface of the wafer body includes:
introducing reaction gas into the reaction cavity;
the reactive gas is used to react with the photoresist layer under ionized conditions to remove activated portions of the upper surface of the photoresist layer.
Further, the reaction gas includes at least one of O2, cxFy, and N2.
Further, before the wafer body placing step, the method further comprises:
coating photoresist on the surface of the wafer body to form the photoresist layer;
and baking the wafer body.
Further, after the step of baking the wafer body, the method further comprises:
patterning the photoresist layer by utilizing a photoetching process;
and removing part of the photoresist layer by using an etching process.
Further, the step of baking the wafer body includes:
and soft baking or hard baking the wafer body in the atmosphere to evaporate part of the solvent on the surface of the photoresist layer.
Further, the step of baking the wafer body includes:
and carrying out soft baking or hard baking on the wafer body in an atmosphere furnace, wherein nitrogen or inert gas is introduced into the atmosphere furnace.
Further, prior to the activating step, the method further comprises:
and a pressure stabilizing step of introducing pressure stabilizing gas into the reaction cavity to control and stabilize the internal pressure of the reaction cavity.
Further, the step of performing a preheating process on the wafer body with the photoresist layer attached to the surface thereof comprises the following steps:
heating the wafer body through a heating device in the reaction chamber in a heat conduction manner;
and continuously introducing temperature equalizing gas into the reaction cavity so as to uniformly heat the wafer body.
In another aspect, the invention provides a semiconductor device, which at least comprises a reaction chamber, and the semiconductor device can realize the above method for processing the photoresist on the surface of the wafer through the reaction chamber.
The beneficial effects of the embodiment of the invention include, for example:
the embodiment of the invention provides a method for processing a photoresist on the surface of a wafer, which comprises the following steps of firstly, placing a wafer body with a photoresist layer attached to the surface in a reaction cavity; then, carrying out preheating treatment on the wafer body to keep the temperature of the wafer body consistent with that of the interior of the reaction cavity, activating the upper surface of the photoresist layer attached to the surface of the wafer body by using plasma, and removing the activated part of the upper surface of the photoresist layer attached to the surface of the wafer body; and sequentially circulating the preheating step to the removing step until a photoresist layer with a preset thickness is left on the surface of the wafer body. Compared with the prior art, the method for processing the photoresist on the surface of the wafer provided by the embodiment of the invention has the advantages that the upper surface layer of the photoresist layer is activated by the plasma before the photoresist layer is removed, then the activated part is removed, and the photoresist of the activated part in the last year is circulated, so that the surface flatness after the photoresist is removed is better, the uniformity of the residual photoresist layer is greatly improved, and the subsequent processing is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a block diagram of a wafer surface photoresist processing method according to a first embodiment of the present invention;
FIG. 2 is a schematic view of step S11 of a method for processing a photoresist on a wafer surface according to a first embodiment of the present invention;
FIG. 3 is a schematic view of step S12 of a method for processing a photoresist on a wafer surface according to a first embodiment of the present invention;
FIG. 4 is a diagram illustrating a photoresist stripping rate distribution of a wafer surface in a method for processing a photoresist on the wafer surface according to an embodiment of the invention;
fig. 5 is a schematic diagram of step S12 in the method for processing a photoresist on a wafer surface according to the second embodiment of the invention.
Icon: 100-a wafer body; 110-a photoresist layer; 200-atmosphere furnace.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", etc. are used to indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings or the orientation or positional relationship which the product of the present invention is used to usually place, it is only for convenience of description and simplification of the description, but it is not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are only used to distinguish one description from another and are not to be construed as indicating or implying relative importance.
As disclosed in the background art, in the conventional photoresist removing process, especially for the process of removing a part of the photoresist layer, oxygen is often used for removing the photoresist, and the oxygen is ionized to form plasma containing oxygen ions, which chemically reacts with the photoresist, thereby achieving the photoresist removing effect. However, on one hand, under low temperature conditions, oxygen ions have low energy and low activation energy, and react with the photoresist slowly, on the other hand, the collision between oxygen ions and other oxygen further reduces the energy, and meanwhile, a hardened layer is formed on the surface of the photoresist layer after soft baking in a single direction, and under the interaction of the two, the uniformity of the photoresist layer after partial photoresist removal under low temperature conditions is poor, and is generally over 7%.
In order to solve the problems, the invention provides a novel method for processing photoresist on the surface of a wafer, which comprises the steps of activating a photoresist layer, and then carrying out a conventional oxygen photoresist removing process, wherein the surface flatness is better after photoresist removing, the uniformity can be controlled within 5 percent, and the uniformity can reach about 2 percent through actual tests. It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
First embodiment
Referring to fig. 1 in combination with fig. 2, the present embodiment provides a method for processing a photoresist on a wafer surface, in which before removing the photoresist layer 110, an activating gas is used to ionize and then bombard the photoresist layer 110, so that the surface of the photoresist layer 110 is activated, the surface flatness after removing the photoresist is better, the uniformity of the remaining photoresist layer 110 is greatly improved, and the subsequent processes are facilitated.
The method for processing the photoresist on the surface of the wafer is suitable for preparing a semiconductor device, and particularly suitable for being used in an epitaxial growth process and after etching.
The method for processing the photoresist on the surface of the wafer provided by the embodiment comprises the following steps of:
s1: placing the wafer body with the photoresist layer attached to the surface in a reaction chamber;
specifically, the step S1 is a wafer body placing step, and the reaction chamber may be a sealed chamber, and the specific parameter configuration of the reaction chamber meets the requirements of the conventional process chamber in the field, which is not described in detail herein. The wafer body 100 may include a substrate and a thin film layer, wherein the thin film layer is epitaxially grown on the substrate, and the photoresist layer 110 covers the thin film layer.
Before step S1 is performed, a wafer body with a photoresist layer attached to a surface thereof needs to be prepared, and specifically, the following steps may be performed:
s11: a photoresist is coated on the surface of the wafer body 100 to form a photoresist layer 110.
Referring to fig. 2 in combination, specifically, steps S11 to S14 may be completed in another process chamber, and when step S11 is performed, a wafer body 100 may be provided, or the wafer body 100 may be formed by forming a thin film layer on a substrate in the process chamber. After the wafer body 100 is formed, a photoresist is spin-coated on the surface of the wafer body 100, so that a photoresist layer 110 is formed on the surface of the wafer body 100.
S12: the wafer body 100 is baked in an atmospheric atmosphere.
Referring to fig. 3 in combination (arrows indicate heat), specifically, the wafer body 100 is soft-baked or hard-baked in an atmospheric atmosphere to evaporate the solvent on the surface of the photoresist. The wafer body 100 can be arranged on a soft baking/hard baking platform, the photoresist layer 110 is located on one side of the wafer body 100 far away from the platform, a heat source is arranged on the lower side of the platform, when heating is carried out, the heat is upwards transferred from the bottom of the wafer body 100 and is transferred to the photoresist layer 110 after passing through the wafer body 100, the upper surface of the photoresist layer 110 is directly contacted with air, so that volatilization is fast, partial solvent on the upper surface of the photoresist layer 110 can be evaporated through baking, and the photoresist layer 110 can greatly meet the precondition that a photoetching process can be carried out.
S13: patterning the photoresist layer 110 using a photolithography process;
specifically, the photoresist layer 110 is accurately exposed and developed using a mask, and a desired etching pattern is transferred onto the photoresist layer 110.
S14: a portion of the photoresist layer 110 is removed using an etching process.
Specifically, the photoresist layer 110 is etched by an etching solution or plasma, and the remaining photoresist layer 110 is covered outside the etching region of the wafer body 100 as a mask, thereby forming a photoresist to protect the wafer body 100 in the non-etching region from being etched.
It should be noted that step S13 and step S14 are both conventional photolithography-etching processes, and the specific process steps, conditions and principles thereof can all refer to the existing photolithography-etching processes.
It should be noted that, in another preferred embodiment of the present invention, step S2 may be directly started without executing step S13 and step S14.
S2: and carrying out preheating treatment on the wafer body with the photoresist layer attached to the surface.
Specifically, after completing the preparation of the photoresist layer 110, i.e., step S12 or step S14, a preheating process step may be performed to keep the temperature of the wafer body and the inside of the reaction chamber uniform. The wafer body 100 is preheated to reach a predetermined temperature, wherein the entire reaction chamber or the bottom of the wafer body 100 may be heated, but the heating method is not limited herein. When the wafer body 100 is actually preheated, the wafer body may be heated first, and then the temperature-equalizing gas is continuously introduced into the reaction chamber, so that the wafer body 100 is heated uniformly. The temperature equalizing gas may be oxygen, and the heat transferred through the gas may make the heat transfer more uniform, so as to quickly maintain the temperature of the wafer body 100 consistent with the temperature set in the reaction chamber. Of course, the temperature equalizing gas here may be other gases, such as nitrogen or helium, and is not limited herein.
In this embodiment, the reaction pressure of the preheating step may be set to 0.5 to 5T, the reaction temperature is 50 to 300 ℃, the reaction time is 5 to 120sec, and the uniform temperature gas flow rate is 100 to 10000sccm. By preheating the wafer body 100, the temperature inside the wafer body 100 and the temperature inside the photoresist layer can be kept consistent, and the subsequent photoresist removing rate and uniformity are improved.
S3: and introducing pressure-stabilizing gas into the reaction cavity.
Specifically, after preheating the wafer body 100, pressure stabilization before the pretreatment of the reaction chamber is required to stabilize the pressure inside the reaction chamber. Pressure-stabilizing gas can be introduced into the reaction cavity to control and stabilize the internal pressure of the reaction cavity. The pressure stabilizing gas can be oxygen, and the internal pressure of the reaction cavity is adjusted through the oxygen, so that the internal pressure of the reaction cavity tends to be stable. Of course, the pressure-stabilizing gas may be other gases, such as nitrogen or helium, and is not limited herein.
In this embodiment, the reaction pressure of the pressure stabilizing step may be set to 0.5 to 5T, the reaction temperature is 50 to 300 ℃, the reaction time is 5 to 120sec, and the flow rate of the pressure stabilizing gas is 100 to 10000sccm.
S4: and activating the upper surface layer of the photoresist layer attached to the surface of the wafer body by using plasma.
Specifically, after the pressure of the reaction chamber is stabilized, an activation step may be performed, and at this time, an activation gas may be introduced into the reaction chamber, and a certain amount of energy (RF, energy is generated by radio frequency) is applied into the reaction chamber, so that the activation gas forms a plasma after ionization, and the plasma may bombard the surface of the photoresist layer 110, thereby activating the surface of the photoresist layer 110, and thus activating the upper surface layer of the photoresist layer attached to the surface of the wafer body. Wherein the activating gas comprises H 2 、N 2 、Ar、C x F y 、SF 6 、NF 3 、He、N 2 At least one gas of O, where x and y are both natural numbers. Of course, the kind of the activated gas is merely illustrative, and preferably, the activated gas can be a gas that does not react directly with the photoresist layer 110, and the activated gas is ionized and used to bombard only the upper surface of the wafer body 100, which acts to activate the top surface of the photoresist layer 110 for surface pretreatment.
In this embodiment, in the activation step, the rf reaction power is 200-800 w, the reaction pressure is 0.5-5T, the reaction temperature is 50-300 ℃, the reaction time is 5-120 sec, and the flow rate of the activation gas is 100-10000 sccm. Preferably, the activating gas is an inert gas or a hydrogen-nitrogen mixed gas with a flow rate of 800sccm, the pressure of the reaction chamber is 1.1T, and the activating gas is ionized at 700W energy to form plasma, and the upper surface of the photoresist layer is bombarded by the plasma for 30S each time.
S5: and removing the activated part of the upper surface of the photoresist layer attached to the surface of the wafer body.
Specifically, after the surface of the photoresist layer 110 is activated, for example, after the activation reaches a predetermined time t1, the reaction gas is introduced into the reaction chamber again, and the reaction gas reacts with the photoresist layer under an ionization condition to remove the activated portion of the upper surface of the photoresist layer, so as to remove the photoresist layer 110.
In this embodiment, oxygen with a specific flow rate may be introduced into the reaction chamber, and a certain capacity may be applied to form a plasma with oxygen ions, and the oxygen plasma chemically reacts with the photoresist for a certain time, thereby achieving the purpose of removing the photoresist. Moreover, the reaction time t2 can be controlled to achieve the purpose of removing part of the photoresist and leaving the photoresist layer 110 completely uniform on the surface of the wafer body 100.
After step S5 is completed, steps S2-S5 need to be repeated until a photoresist layer with a predetermined thickness is left on the surface of the wafer body. Since the activation process is performed in advance, the uniformity of the remaining photoresist layer 110 after removing a portion of the photoresist layer 110 by using the reactive gas is better, and can be less than 5%, for example, after the photoresist is removed by the plasma process, the photoresist removal rate 860A/min and the uniformity is 2.6%, specifically, refer to fig. 4, which is a wafer photoresist removal rate distribution diagram.
In this embodiment, the reactant gas may be O 2 、C x F y 、N 2 Preferably oxygen.
It should be noted that, in this embodiment, the ionization bombardment device may be disposed in the reaction chamber to ionize the activated gas and the reaction gas, respectively, and in this embodiment, the ionization bombardment device may be a radio frequency power supply. When reaction gas is introduced, oxygen-containing gas is triggered to dissociate by the ionization bombardment device to generate oxygen radicals, and the oxygen radicals are used as reactants to perform chemical reaction with the photoresist layer 110, so that the purpose of removing the photoresist layer 110 by using reaction plasma is achieved.
It should be noted that, in the present embodiment, the predetermined time t1 and the reaction time t2 can be determined according to parameters such as the performance of the ionization bombardment apparatus and the thickness of the photoresist layer 110.
The embodiment also provides semiconductor equipment which comprises a reaction cavity, and the method for processing the photoresist on the surface of the wafer can be realized through the reaction cavity. Specifically, an ionization bombardment device is also arranged in the reaction cavity to respectively ionize the activated gas and the reaction gas. Meanwhile, the reaction cavity is also provided with a reaction gas feeding device and an activated gas feeding device, and a heating device is arranged at the bottom of the reaction cavity to heat the wafer body.
In summary, in the method for processing the photoresist on the surface of the wafer provided by this embodiment, the wafer body with the photoresist layer attached to the surface is first placed in the reaction chamber; then carrying out preheating treatment on the wafer body to keep the temperature of the wafer body consistent with that of the interior of the reaction cavity, activating the upper surface of the photoresist layer attached to the surface of the wafer body by using plasma, and removing the activated part of the upper surface of the photoresist layer attached to the surface of the wafer body; and sequentially circulating the preheating step to the removing step until a photoresist layer with a preset thickness is left on the surface of the wafer body. In the embodiment, before the photoresist layer 110 is removed, the activating gas is used for ionizing and then bombarding the photoresist layer 110, so that the surface of the photoresist layer 110 is activated, the surface flatness after photoresist removal is better, the uniformity of the residual photoresist layer 110 is greatly improved, and the subsequent process is facilitated to be continuously performed.
Second embodiment
The basic steps and principles of the method for processing a photoresist on a wafer surface provided in this embodiment and the technical effects thereof are the same as those of the first embodiment, and for brief description, reference may be made to corresponding contents in the first embodiment for the parts that are not mentioned in this embodiment.
The difference between the method for processing a photoresist on a wafer surface provided by this embodiment and the first embodiment is step S1, in this embodiment, before step S1 is performed, the following steps need to be performed: s11: a photoresist is coated on the surface of the wafer body 100 to form a photoresist layer 110.
Specifically, a wafer body 100 may be provided, and the wafer body 100 may also be formed in a reaction chamber by forming a thin film layer on a substrate. After the wafer body 100 is formed, a photoresist is spin-coated on the surface of the wafer body 100, so that a photoresist layer 110 is formed on the surface of the wafer body 100.
S12: the wafer body 100 is baked in the atmosphere furnace 200.
Referring to fig. 5 in combination (arrows indicate heat), specifically, after the coating process is completed, the wafer body 100 is soft-baked or hard-baked in the atmosphere furnace 200 to evaporate the solvent on the surface of the photoresist. Wherein, nitrogen or inert gas can be introduced into the atmosphere furnace 200. Wafer body 100 can set up on soft bake/hard bake platform, photoresist layer 110 is located wafer body 100 top, the platform has the heat source all around, when heating, the heat is transferred to photoresist layer 110 to wafer body 100 by all around for wafer and upper photoresist are whole to be heated and are stirred evenly, the inconsistent condition of solvent evaporation in the photoresist has been avoided, make inside solvent of photoresist and long chain hydrocarbon cross-linking compound distribute unanimously, and make photoresist layer 110 satisfy the precondition that can carry out lithography process greatly.
It should be noted that, in this embodiment, the atmosphere furnace 200 may bake a plurality of wafer bodies 100 at the same time, and the atmosphere furnace 200 is used to perform soft baking and hard baking at the same time, so that the situation that the volatilization of the solvent on the photoresist is inconsistent due to one-side heat transfer under the conventional conditions can be effectively reduced, the situation that the photoresist removal rate is inconsistent during photoresist removal is avoided, and the good surface uniformity of the subsequent photoresist layer 110 is ensured.
S13: patterning the photoresist layer 110 using a photolithography process;
specifically, the photoresist layer 110 is accurately exposed and developed using a mask, and a desired etching pattern is transferred onto the photoresist layer 110.
S14: a portion of the photoresist layer 110 is removed using an etching process.
Specifically, the photoresist layer 110 is etched by an etching solution or plasma, and the remaining photoresist layer 110 is covered outside the etching region of the wafer body 100 as a mask, thereby forming a photoresist to protect the wafer body 100 in the non-etching region from being etched.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method for processing a photoresist on a wafer surface, comprising:
a wafer body placing step, namely placing the wafer body with the photoresist layer attached to the surface in a reaction cavity;
a preheating step, namely preheating the wafer body with the surface adhered with the photoresist layer so as to keep the temperature of the wafer body consistent with that of the interior of the reaction cavity;
activating the upper surface layer of the photoresist layer attached to the surface of the wafer body by using plasma;
a removing step of removing the activated part of the upper surface of the photoresist layer attached to the surface of the wafer body;
and sequentially circulating the preheating treatment step to the removing step until a photoresist layer with a preset thickness is left on the surface of the wafer body.
2. The method as claimed in claim 1, wherein the step of activating the top layer of the photoresist layer attached to the surface of the wafer body by using plasma comprises:
introducing an activating gas into the reaction cavity, wherein the activating gas is an inert gas with the flow of 800sccm or a hydrogen-nitrogen mixed gas, and the pressure of the reaction cavity is 1.1T;
ionizing the activated gas at 700W energy to form the plasma;
and bombarding the upper surface of the photoresist layer by using the plasma, wherein the bombardment time is 30S each time.
3. The method as claimed in claim 1, wherein the step of removing the activated portion of the upper surface of the photoresist layer attached to the surface of the wafer body comprises:
introducing reaction gas into the reaction cavity;
reacting the photoresist layer with the reaction gas under ionization conditions to remove activated portions of the upper surface of the photoresist layer.
4. A method of processing photoresist on a wafer surface according to claim 1, wherein before the step of placing the wafer body, the method further comprises:
coating photoresist on the surface of the wafer body to form the photoresist layer;
and baking the wafer body.
5. The method of claim 4, wherein after the step of baking the wafer body, the method further comprises:
patterning the photoresist layer by using a photoetching process;
and removing part of the photoresist layer by using an etching process.
6. The method as claimed in claim 4, wherein the step of baking the wafer body comprises:
and soft baking or hard baking the wafer body in the atmosphere to evaporate part of the solvent on the surface of the photoresist layer.
7. The method as claimed in claim 4, wherein the step of baking the wafer body comprises:
and carrying out soft baking or hard baking on the wafer body in an atmosphere furnace, wherein nitrogen or inert gas is introduced into the atmosphere furnace.
8. The method of claim 1, wherein prior to the activating step, the method further comprises:
and a pressure stabilizing step, namely introducing pressure stabilizing gas into the reaction cavity to control and stabilize the internal pressure of the reaction cavity.
9. The method as claimed in claim 1, wherein the step of pre-heating the wafer with the photoresist layer on the surface comprises:
heating the wafer body through a heating device in the reaction chamber in a heat conduction manner;
and continuously introducing temperature equalizing gas into the reaction cavity so as to uniformly heat the wafer body.
10. A semiconductor device comprising at least a reaction chamber, characterized in that: the semiconductor equipment can realize the processing method of the photoresist on the surface of the wafer according to any one of claims 1 to 9 through the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211470617.0A CN115712229A (en) | 2022-11-23 | 2022-11-23 | Processing method of wafer surface photoresist and semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211470617.0A CN115712229A (en) | 2022-11-23 | 2022-11-23 | Processing method of wafer surface photoresist and semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115712229A true CN115712229A (en) | 2023-02-24 |
Family
ID=85234248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211470617.0A Pending CN115712229A (en) | 2022-11-23 | 2022-11-23 | Processing method of wafer surface photoresist and semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115712229A (en) |
-
2022
- 2022-11-23 CN CN202211470617.0A patent/CN115712229A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10727080B2 (en) | Tantalum-containing material removal | |
| US11615970B2 (en) | Radical assist ignition plasma system and method | |
| US9947549B1 (en) | Cobalt-containing material removal | |
| US20210082692A1 (en) | Method of forming a carbon-containing layer and structure including the layer | |
| KR102148035B1 (en) | Removal of polysilicon and native oxide with high selectivity | |
| US9859126B2 (en) | Method for processing target object | |
| US8211808B2 (en) | Silicon-selective dry etch for carbon-containing films | |
| EP3051576B1 (en) | Method of processing a target object comprising forming a silicon oxide film | |
| JP2002222861A (en) | Method for fabricating semiconductor element in device comprising plasma pretreatment module | |
| KR102328025B1 (en) | Method for patterning differing critical dimensions at sub-resolution scales | |
| US20230018151A1 (en) | Substrate processing method and plasma processing apparatus | |
| US20230223263A1 (en) | Inert gas implantation for hard mask selectivity improvement | |
| US10923358B2 (en) | Substrate processing method | |
| WO2015105622A1 (en) | Carbon film stress relaxation | |
| TW201611120A (en) | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films | |
| JPH07321090A (en) | Method for etching post-treatment | |
| KR100379210B1 (en) | Method for Semiconductor Wafer Ashing | |
| CN112635317A (en) | Etching method, method for removing damaged layer, and storage medium | |
| CN115712229A (en) | Processing method of wafer surface photoresist and semiconductor equipment | |
| US20230274942A1 (en) | Method for manufacturing semiconductor device | |
| US20240055270A1 (en) | Substrate processing with material modification and removal | |
| JP2000012521A (en) | Plasma ashing method | |
| US20220336224A1 (en) | Method of etching film and plasma processing apparatus | |
| US7192875B1 (en) | Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens | |
| KR20050112858A (en) | Strip method for resist on the wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 214000 Guanshan Road, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Wuxi Yiwen Microelectronics Technology Co.,Ltd. Address before: 214000 Guanshan Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: WUXI YIWEN ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information |