CN115704100A - Method and equipment for horizontally electroplating upper surface of crystalline silicon solar cell - Google Patents
Method and equipment for horizontally electroplating upper surface of crystalline silicon solar cell Download PDFInfo
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- CN115704100A CN115704100A CN202110898130.1A CN202110898130A CN115704100A CN 115704100 A CN115704100 A CN 115704100A CN 202110898130 A CN202110898130 A CN 202110898130A CN 115704100 A CN115704100 A CN 115704100A
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Abstract
The invention discloses a method and equipment for horizontally electroplating the upper surface of a crystalline silicon solar cell, which enable the lower surface of the crystalline silicon solar cell to contact with a conductive transmission device, spray electroplating solution on the upper surface of the crystalline silicon solar cell, and carry out photoinduction electroplating, or traditional electroplating, or photoinduction assisted traditional electroplating while horizontally transmitting the crystalline silicon solar cell on the conductive transmission device.
Description
Technical Field
The invention relates to a method and equipment for electroplating the upper surface of a crystalline silicon solar cell, in particular to a method and equipment for horizontally advancing electroplating the upper surface of the crystalline silicon solar cell.
Background
The adoption of electroplating processes to achieve the metallization of crystalline silicon solar cells has increasingly attracted attention in the photovoltaic field. The main reason for this is that high efficiency crystalline silicon solar cell structures are not suitable for high temperature metallization processes, in particular, high temperature sintering processes (e.g., above 800 degrees). Therefore, high efficiency crystalline silicon solar cells typically employ low temperature metallization processes. Unlike high temperature metallization processes, the sintering temperature of low temperature metallization processes is typically less than 400 degrees.
Low temperature metallization processes require the use of low temperature slurries. Due to different preparation processes and materials, the price of the low-temperature slurry is much higher than that of the high-temperature slurry. With the increasing price of noble metals, the price of low-temperature slurry also increases obviously. In order to improve the competitiveness of high-efficiency crystalline silicon solar cells, the photovoltaic field pays attention to an electroplating metallization process to replace a low-temperature slurry metallization process.
The plating techniques that have been disclosed so far are represented by the vertical plating technique of MECO corporation and the horizontal plating technique of RENA corporation. Vertical plating by MECO corporation has power contact problems with high efficiency crystalline silicon solar cells. The drawback of horizontal electroplating by RENA corporation is that the conductive brushes used can damage the surface of the high efficiency crystalline silicon solar cells.
The object of the present invention is to overcome these drawbacks.
Disclosure of Invention
In view of the defects of the above technology, the present invention discloses a method and an apparatus for performing horizontal electroplating on the upper surface of a crystalline silicon solar cell, and particularly discloses a method and an apparatus for performing horizontal forward electroplating on the upper surface of a crystalline silicon solar cell.
The object of the present invention is to find a method and a device for horizontal electroplating of the upper surface of a crystalline silicon solar cell, which method and device have a good electrically conductive contact with the crystalline silicon solar cell.
Another object of the present invention is to find a method and an apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell, which do not rub against the surface of the crystalline silicon solar cell and thus do not damage the surface of the crystalline silicon solar cell, with good conductive contact between the crystalline silicon solar cell and the crystalline silicon solar cell.
In order to achieve the purpose, the invention discloses a method and equipment for horizontally electroplating the upper surface of a crystalline silicon solar cell, which enable the lower surface of the crystalline silicon solar cell to contact with a conductive transmission device, spray electroplating solution on the upper surface of the crystalline silicon solar cell, and carry out photoinduction electroplating, or traditional electroplating, or photoinduction assisted traditional electroplating on the upper surface of the crystalline silicon solar cell while the conductive transmission device horizontally transmits the crystalline silicon solar cell.
The method and the equipment for horizontally electroplating the upper surface of the crystalline silicon solar cell have the advantages that the existing point contact type electric conduction of vertical electroplating is optimized to be linear electric conduction contact or surface contact electric conduction, the electric conduction contact area is increased compared with the electric conduction contact method in the prior art, friction is not generated between the electric conduction contact area and the surface of the crystalline silicon solar cell, and the problems of poor electric conduction contact, surface friction and the like are solved.
Drawings
FIG. 1 is a schematic diagram of one embodiment of a method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention.
FIG. 2 is a schematic diagram of a second embodiment of the method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention.
Fig. 3 is a schematic diagram of a third embodiment of the method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention.
FIG. 4 is a schematic diagram of a fourth embodiment of the method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention.
FIG. 5 is a schematic diagram of five embodiments of a method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention.
Detailed Description
In the following description, for the purposes of explanation, specific embodiments of the invention are set forth in order to provide a thorough understanding of the invention. It is to be understood that such description is not intended as a limitation on the invention. Various other corresponding combinations, alterations, and modifications may be made in accordance with the present invention by those skilled in the art without departing from the spirit and substance of the invention. Such corresponding combinations, variations and modifications are intended to be within the scope of the appended claims.
Referring to fig. 1, in a first embodiment of a method and apparatus for horizontally plating the upper surface of a crystalline silicon solar cell of the present invention, a crystalline silicon solar cell 40 is placed on a conductive transfer belt 130. The conductive transmission belt 130 may be any conductive transmission belt, such as a metal transmission belt, or a fiber conductive transmission belt, or a polymer conductive transmission belt, such as a conductive plastic and a conductive rubber transmission belt, etc. Meanwhile, the conductive transmission belt 130 may be a belt-shaped, or a mesh-shaped, or other shapes. The conductive belt 130 is driven by a roller 140, and the roller 140 may be a conductive roller or an insulating roller. The conductive transmission belt 130 horizontally transmits the crystalline silicon solar cell 40, and the lower surface of the crystalline silicon solar cell 40 is in conductive contact with the conductive transmission belt 130, so that the upper surface of the crystalline silicon solar cell 40 becomes the cathode surface of the electroplating process under the action of the electroplating direct-current power supply 110.
The crystalline silicon solar cell 40 of the method and the device for horizontally electroplating the upper surface of the crystalline silicon solar cell of the invention is any crystalline silicon solar cell, or any crystalline silicon solar cell taking a crystalline silicon wafer as a matrix, for example, the crystalline silicon solar cell can be a traditional screen printing crystalline silicon solar cell, a PERC crystalline silicon solar cell, a hetero-crystalline silicon solar cell, a TOPCON crystalline silicon solar cell, a crystalline silicon solar cell of perovskite formed on a crystalline silicon wafer, and the like.
As shown in fig. 1, there is a plating bath tank 60 below the conductive transfer belt 130. The plating bath tank 60 contains a plating solution 70. The plating solution 70 in the plating solution tank 60 is transferred to the transfer intermediate tank 50, and then the plating solution 70 is applied to the upper surface of the crystalline silicon solar cell 40. The position of the conveying intermediate tank 50 may be any position in the method and apparatus for horizontally plating the upper surface of the crystalline silicon solar cell of the present invention, for example, may be higher than the plating bath 60, or higher than the conductive transfer belt 130, or higher than the crystalline silicon solar cell 40.
The plating anode 20 of this embodiment is placed in the conveyance intermediate tank 50. The plating anode 20 of the present invention may be a soluble anode or an insoluble anode.
The plating solution 70 is applied to the upper surface of the crystalline silicon solar cell 40 through a plating solution spout, or overflow vent 10, above the upper surface of the crystalline silicon solar cell 40, forming a plating solution film on the upper surface of the crystalline silicon solar cell 40, and a plating solution film upper surface 30. The position of the plating solution spout or overflow port 10 is close to the upper surface of the crystalline silicon solar cell 40, so that the plating solution spout or overflow port 10 contacts the upper surface 30 of the plating liquid film, or the plating solution 70 in the conveying intermediate tank 50 is continuous with the plating liquid film on the upper surface of the crystalline silicon solar cell 40, and the anode potential of the plating anode 20 in the conveying intermediate tank 50 can be conducted to the upper surface of the crystalline silicon solar cell 40 or the anode potential of the plating anode 20 in the conveying intermediate tank 50 can be conducted to the upper cathode surface of the crystalline silicon solar cell 40 by virtue of the conductivity of the plating solution 70.
If the roller 140 is conductive, the roller 140 is connected to the negative electrode of the DC plating power supply 110 via the connection line 90, or the negative electrode of the plating DC power supply 110 is directly connected to the conductive belt 130, and the positive electrode of the DC plating power supply 110 is connected to the plating anode in the middle conveying tank 50. Under the above settings, the roller 140 is turned on to drive the conductive transmission belt 130 to move horizontally, the dc plating power supply 110 is turned on, and the potential of the negative electrode of the dc plating power supply 110 is transmitted to the crystalline silicon solar cell 40 through the conductive transmission belt 130, so that the upper surface of the crystalline silicon solar cell 40 becomes the cathode surface of the plating process, and the plating reaction occurs on the upper surface of the crystalline silicon solar cell 40.
In the present embodiment, if the light source 100 is turned on, photo-induced auxiliary plating may be performed on the upper surface of the crystalline silicon solar cell. Turning on the light source can reduce the conductive resistance of the upper and lower surfaces of the crystalline silicon solar cell 40, thereby improving the uniformity of plating and the plating rate.
The second embodiment of the present invention is an embodiment of light-induced electroplating. Referring to fig. 2, the second embodiment horizontally transfers the crystalline silicon solar cells 40 using the conductive transfer roller 80. The conductive transfer roller 80 may be any conductive transfer roller, such as a metal conductive transfer roller, or a conductive roller of conductive plastic and conductive rubber, or a conductive carbon fiber roller. The conductive transmission roller 80 horizontally transmits the crystalline silicon solar cell 40, the lower surface of the crystalline silicon solar cell 40 is in conductive contact with the conductive transmission roller 80, and the upper surface of the crystalline silicon solar cell 40 is an n-type surface of the crystalline silicon solar cell 40.
As shown in FIG. 2, a plating bath 60 is provided below the conductive transfer roller 80. The plating bath tank 60 contains a plating solution 70. The plating solution 70 in the plating solution tank 60 is transferred to the transfer intermediate tank 50, and then the plating solution 70 is applied to the upper surface of the crystalline silicon solar cell 40 through the plating solution spout, or overflow port 10, to form a plating solution film on the upper surface of the crystalline silicon solar cell 40, and a plating solution film upper surface 30. In other applications of a method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention, the transfer intermediate bath 50 may also be omitted.
In the second embodiment, the plating anode 20 is directly mounted above the crystalline silicon solar cell 40, and is in contact with the upper surface 30 of the plating liquid film formed above the crystalline silicon solar cell 40. The plating anode 20 may be a soluble anode or an insoluble anode.
In this embodiment, each conductive transfer roller 80 is coupled to one of the conductive transfer rollers 80 and one of the anodes 20, corresponding to one of the plating anodes 20, i.e., the coupling line 90. The advantage of this coupling is that the plating current density of each crystalline silicon solar cell 40 is generated by that crystalline silicon solar cell 40 and is not affected by the number of crystalline silicon solar cells 40 being plated in the device. Under the above settings, if the n-type surface of the crystalline silicon solar cell 40 is turned on, the conductive transmission roller 80 is turned on, the light source 100 is turned on, the crystalline silicon solar cell 40 generates direct current electric energy under illumination, the n-type surface thereof generates a negative potential, so that the n-type surface is converted into a cathode surface in the electroplating process, the p-type surface of the crystalline silicon solar cell 40 generates a positive potential, and after the electroplating anode 20 is connected through the conductive transmission roller 80, a photo-induced electrochemical electroplating reaction is generated on the upper surface of the crystalline silicon solar cell 40.
In the present embodiment, referring to fig. 2, the plating solution 70 covers most of the area of the conductive transmission roller 80, or the liquid level of the plating solution 70 is very close to the lower surface of the crystalline silicon solar cell 40, so that the lower surface of the crystalline silicon solar cell 40 is easily wetted by the plating solution 70 brought by the conductive transmission roller 80 when rotating. By means of the conductivity of the electroplating solution 70, the uniformity of the conductive contact between the conductive transmission roller 80 and the lower surface of the crystalline silicon solar cell 40 can be improved, the resistance of the conductive contact between the conductive transmission roller 80 and the lower surface of the crystalline silicon solar cell 40 can be reduced, and the electroplating uniformity is facilitated. Further, it is optimized that the electroplating solution 70 in the electroplating bath 60 can directly contact the lower surface of the crystalline silicon solar cell 40 (not shown in fig. 2), so that the original line contact between the conductive transmission roller 80 and the crystalline silicon solar cell 40 is converted into the surface contact between the electroplating solution 70 and the lower surface of the crystalline silicon solar cell 40, which will greatly improve the uniformity of the conductive contact, and reduce the conductive contact resistance, which is beneficial to improving the uniformity of the electrochemical plating reaction process and the electroplating rate.
Fig. 3 discloses another embodiment of the method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention. One of the distinctive features from embodiment 2 is that the plurality of anodes 20 in embodiment two are replaced by one large-area plating anode 20 of this embodiment. The large-area electroplating anode 20 of the present invention means that the area of the large-area electroplating anode 20 at least covers two crystalline silicon solar cells 40. In this embodiment, the plating anode 20 covers the entire plating area. The large area electroplating anode 20 can generate a more uniform electroplating anode potential field on the upper surface of the crystalline silicon solar cell, so that the electrochemical electroplating reaction is more uniform.
As shown in fig. 3, the crystalline silicon solar cells 40 are placed on the conductive transfer roller 80. The conductive transfer roller 80 and the negative electrode of the direct current plating power supply 110 are coupled through the coupling line 90, and the positive electrode of the direct current plating power supply 110 is coupled to the plating anode 20 which is in contact with the upper surface 30 of the plating liquid film on the upper surface of the crystalline silicon solar cell 40. Under the above settings, the conductive transmission roller 80 is turned on, the crystalline silicon solar cell 40 is horizontally transmitted by the conductive transmission roller 80, the direct current electroplating power supply 110 is turned on, and the potential of the negative electrode of the direct current electroplating power supply 110 is transmitted to the crystalline silicon solar cell 40 through the conductive transmission roller 80, so that the upper surface of the crystalline silicon solar cell 40 becomes the cathode surface of the electroplating process, and the electrochemical electroplating reaction occurs on the upper surface of the crystalline silicon solar cell 40.
In the present embodiment, if the light source 100 is turned on, light-induced auxiliary plating may be performed on the upper surface of the crystalline silicon solar cell 40.
Fig. 4 discloses another embodiment of the method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention. In this embodiment, an insulating roller 120 is placed on the conductive transfer roller 80, and the insulating roller 120 is in contact with the upper surface of the crystalline silicon solar cell 40. The insulating roller 120 can ensure that the crystalline silicon solar cell 40 is smoothly and horizontally transferred, and can also ensure that the crystalline silicon solar cell 40 has good conductive contact with the conductive transfer roller 80.
To ensure that the plating anode 20 is in contact with the plating solution film upper surface 30, a plurality of plating anodes 20 are substituted for the one-piece plating anode 20 disclosed in the third embodiment, i.e., the plating anode 20 is placed between two insulated rollers.
As shown in fig. 4, the crystalline silicon solar cells 40 are placed on the conductive transfer roller 80. There is a plating bath tank 60 under the conductive transfer roller 80. The plating bath tank 60 contains a plating solution 70. The plating solution 70 in the plating solution tank 60 is transferred to the transfer intermediate tank 50, and then the plating solution 70 is applied to the upper surface of the crystalline silicon solar cell 40 through the plating solution spout, or the overflow port 10, so that the plating solution 70 forms a plating solution film on the upper surface of the crystalline silicon solar cell 40, and a plating solution film upper surface 30.
The conductive transfer roller 80 and the negative electrode of the direct current plating power source 110 are coupled through the coupling line 90, and the positive electrode of the direct current plating power source 110 is coupled to the anode 20 contacting the upper surface 30 of the plating liquid film on the upper surface of the crystalline silicon solar cell 40. Under the above settings, the conductive transmission roller 80 is turned on, the crystalline silicon solar cell 40 is horizontally transmitted by the conductive transmission roller 80, the direct current electroplating power supply 110 is turned on, and the potential of the negative electrode of the direct current electroplating power supply 110 is transmitted to the lower surface of the crystalline silicon solar cell 40 through the conductive transmission roller 80, so that the upper surface of the crystalline silicon solar cell 40 becomes the cathode surface of the electroplating process, and the electrochemical electroplating reaction occurs on the upper surface of the crystalline silicon solar cell 40.
In the present embodiment, if the light source 100 is turned on, photo-induced auxiliary plating may be performed on the upper surface of the crystalline silicon solar cell 40.
Fig. 5 discloses another embodiment of the method and apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell of the present invention. In the present embodiment, a method of covering the entire plating area with a single piece of the plating anode 20 is employed, similarly to the third embodiment, except that a squeegee 150 is installed between the plating anode 20 and the crystalline silicon solar cell 40, and there is one squeegee 150 corresponding to each conductive transfer roller 80. The liquid scraping plate 150 is used for ensuring that no electroplating liquid 70 overflows from the upper surface of the crystalline silicon solar cell 40 onto the conductive transmission roller 80 when the peripheral edge of the crystalline silicon solar cell 40 passes through the conductive transmission roller 80, so that electroplating on the conductive transmission roller 80 is avoided.
As shown in fig. 5, the crystalline silicon solar cell 40 is placed on the conductive transfer roller 80, and there is a plating bath 60 under the conductive transfer roller 80. The plating bath tank 60 contains a plating solution 70. The plating solution 70 in the plating solution tank 60 is transferred to the transfer intermediate tank 50, and then the plating solution 70 is applied to the upper surface of the crystalline silicon solar cell 40 through the plating solution spout, or overflow port 10, to form a plating solution film on the upper surface of the crystalline silicon solar cell 40, and a plating solution film upper surface 30.
The conductive transfer roller 80 and the negative electrode of the direct current plating power source 110 are coupled through the coupling line 90, and the positive electrode of the direct current plating power source 110 is coupled to the anode 20 contacting the upper surface 30 of the plating liquid film on the upper surface of the crystalline silicon solar cell 40. Under the above settings, the conductive transmission roller 80 is turned on, the crystalline silicon solar cell 40 is horizontally transmitted by the conductive transmission roller 80, the direct current electroplating power supply 110 is turned on, and the potential of the negative electrode of the direct current electroplating power supply 110 is transmitted to the crystalline silicon solar cell 40 through the conductive transmission roller 80, so that the upper surface of the crystalline silicon solar cell 40 becomes the cathode surface of the electroplating process, and the electrochemical electroplating reaction occurs on the upper surface of the crystalline silicon solar cell 40.
Also, in the present embodiment, if the light source 100 is turned on, the light-induced auxiliary plating is performed on the upper surface of the crystalline silicon solar cell 40.
Claims (10)
1. A method for horizontally plating an upper surface of a crystalline silicon solar cell, wherein the upper surface of the crystalline silicon solar cell 40 is horizontally plated while being horizontally transferred, comprising:
the crystalline silicon solar cells 40 are horizontally transported by the conductive transport roller 80, or the conductive transport belt 130, or the conductive transport roller 80 and the conductive transport belt 130;
the electroplating solution 70 is sprayed on the upper surface of the crystalline silicon solar cell 40 to generate an electroplating solution film on the upper surface of the crystalline silicon solar cell 40;
the electroplating anode 20 is contacted with the electroplating solution 70 on the upper surface of the crystalline silicon solar cell 40, or the electroplating solution 70 is sprayed on the upper surface of the crystalline silicon solar cell 40 without clearance after being contacted with the electroplating anode 20;
the negative electrode of the electroplating direct current power supply 110 is connected with the conductive transmission roller 80 or the conductive transmission belt 130, the positive electrode of the electroplating direct current power supply 110 is connected with the electroplating anode 20, the lower surface of the crystalline silicon solar cell 40 is contacted with the conductive transmission roller 80 or the conductive transmission belt 130, and then the upper surface of the crystalline silicon solar cell 40 becomes the electroplating cathode surface, so that electroplating is carried out on the upper surface of the crystalline silicon solar cell 40, or under the condition that the crystalline silicon solar cell 40 is simultaneously illuminated, light-induced auxiliary electroplating is carried out on the upper surface of the crystalline silicon solar cell 40;
the conductive transfer roller 80, or the conductive transfer belt 130 is directly coupled to the plating anode 20, and light-induced plating occurs on the n-type upper surface of the crystalline silicon solar cell 40 when being irradiated with light.
2. The method for horizontally electroplating the upper surface of the crystalline silicon solar cell as claimed in claim 1, wherein the method for coating the electroplating solution 70 on the upper surface of the crystalline silicon solar cell 40 is spraying or overflowing.
3. The method of claim 1, wherein the lower surface of the crystalline silicon solar cell 40 contacts the surface of the plating solution 70 in the plating bath 60.
4. A method for horizontal electroplating of the upper surface of crystalline silicon solar cells as claimed in claim 1, wherein the crystalline silicon solar cells 40 are conventional screen-printed crystalline silicon solar cells, or PERC crystalline silicon solar cells, or heterojunction solar cells, or TOPCON crystalline silicon solar cells, and perovskite crystalline silicon solar cells formed on crystalline silicon wafers.
5. An apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell, characterized in that the apparatus comprises at least:
a conductive conveying roller 80, or a conductive conveying belt 130, or a conductive conveying roller 80 and a conductive conveying belt 130;
a plating solution tank 60 is arranged below the conductive transmission roller 80, the conductive transmission belt 130, or the conductive transmission roller 80 and the conductive transmission belt 130;
a plating solution nozzle or a plating solution overflow port 10 is arranged above the conductive transmission roller 80, the conductive transmission belt 130, or the conductive transmission roller 80 and the conductive transmission belt 130;
the plating anode 20 contacts the plating solution 70 on the upper surface of the crystalline silicon solar cell 40 or is immersed in the plating solution 70.
6. The apparatus for horizontal plating of the upper surface of the crystalline silicon solar cell as claimed in claim 6, wherein the apparatus further comprises a dc plating power supply 110; a light source 100; an insulating roller 120; a wiper plate 150.
7. The apparatus for horizontally electroplating the upper surface of the crystalline silicon solar cell as claimed in claim 5, wherein the conductive transmission roller 80 is a metal roller, a conductive carbon fiber roller or a conductive polymer roller; the conductive transmission belt 130 is a metal transmission belt, or a conductive carbon fiber belt, or a conductive polymer belt; the conductive transmission belt 130 is a mesh or a belt.
8. The device for horizontally electroplating the upper surface of the crystalline silicon solar cell according to claim 5, wherein the conductive conveying roller 80, the conductive conveying belt 130, or the conductive conveying roller 80 and the conductive conveying belt 130 are used for conducting the negative electrode potential of the direct current electroplating power supply 110 to the crystalline silicon solar cell 40 while horizontally conveying the crystalline silicon solar cell 40, so that the upper surface of the crystalline silicon solar cell 40 becomes the cathode surface of the electroplating process; or, in the light-induced electroplating process, the conductive conveying roller 80, the conductive conveying belt 130, or both the conductive conveying roller 80 and the conductive conveying belt 130 horizontally convey the crystalline silicon solar cell 40, and simultaneously, the positive potential generated on the lower surface of the crystalline silicon solar cell 40 is conducted to the electroplating anode.
9. The apparatus for horizontally electroplating the upper surface of the crystalline silicon solar cell as claimed in claim 5, wherein the electroplating anode 20 covers at least two crystalline silicon solar cells 40.
10. The apparatus for horizontal plating of the upper surface of a crystalline silicon solar cell as claimed in claim 5 or 9, wherein the plating anode 20 is a soluble anode or an insoluble anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110898130.1A CN115704100A (en) | 2021-08-05 | 2021-08-05 | Method and equipment for horizontally electroplating upper surface of crystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110898130.1A CN115704100A (en) | 2021-08-05 | 2021-08-05 | Method and equipment for horizontally electroplating upper surface of crystalline silicon solar cell |
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| CN115704100A true CN115704100A (en) | 2023-02-17 |
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| CN202110898130.1A Pending CN115704100A (en) | 2021-08-05 | 2021-08-05 | Method and equipment for horizontally electroplating upper surface of crystalline silicon solar cell |
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