CN115699339A - 发光器件、显示装置和显示装置的制作方法 - Google Patents
发光器件、显示装置和显示装置的制作方法 Download PDFInfo
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- CN115699339A CN115699339A CN202180001238.4A CN202180001238A CN115699339A CN 115699339 A CN115699339 A CN 115699339A CN 202180001238 A CN202180001238 A CN 202180001238A CN 115699339 A CN115699339 A CN 115699339A
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- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000002086 nanomaterial Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 230000005540 biological transmission Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 27
- 239000002073 nanorod Substances 0.000 claims description 14
- 239000002070 nanowire Substances 0.000 claims description 14
- 239000002127 nanobelt Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 238000007641 inkjet printing Methods 0.000 claims description 11
- 239000002061 nanopillar Substances 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000002135 nanosheet Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本公开实施例提供一种发光器件、显示装置和显示装置的制作方法。所述发光器件包括:第一电极层,所述第一电极层位于衬底基板的一侧;第二电极层,所述第二电极层位于所述第一电极层背离所述衬底基板的一侧;发光层,所述发光层位于所述第一电极层和所述第二电极层之间,包括多个各向异性纳米结构,且所述各向异性纳米结构的主延伸方向大致平行于所述衬底基板。
Description
PCT国内申请,说明书已公开。
Claims (19)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2021/095538 WO2022246604A1 (zh) | 2021-05-24 | 2021-05-24 | 发光器件、显示装置和显示装置的制作方法 |
Publications (1)
Publication Number | Publication Date |
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CN115699339A true CN115699339A (zh) | 2023-02-03 |
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ID=84229389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202180001238.4A Pending CN115699339A (zh) | 2021-05-24 | 2021-05-24 | 发光器件、显示装置和显示装置的制作方法 |
Country Status (2)
Country | Link |
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CN (1) | CN115699339A (zh) |
WO (1) | WO2022246604A1 (zh) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8314544B2 (en) * | 2008-09-01 | 2012-11-20 | Kyonggi University Industry & Academia Cooperation Foundation | Inorganic light-emitting device |
KR101675109B1 (ko) * | 2010-08-06 | 2016-11-11 | 삼성전자주식회사 | 표면 플라즈몬 공명을 이용하여 발광 특성이 향상된 발광 소자 및 그 제조 방법 |
CN102760799B (zh) * | 2011-04-29 | 2015-01-21 | 清华大学 | 发光二极管的制备方法 |
CN102760801B (zh) * | 2011-04-29 | 2015-04-01 | 清华大学 | 发光二极管的制备方法 |
JP6044010B2 (ja) * | 2012-07-31 | 2016-12-14 | エルジー・ケム・リミテッド | 有機電子素子用基板 |
US9535279B2 (en) * | 2013-10-23 | 2017-01-03 | Lg Display Co., Ltd. | Liquid crystal display including nanocapsule layer |
CN106356465B (zh) * | 2016-10-27 | 2020-01-14 | Tcl集团股份有限公司 | 一种基于纳米棒的高效qled器件及显示器 |
-
2021
- 2021-05-24 CN CN202180001238.4A patent/CN115699339A/zh active Pending
- 2021-05-24 WO PCT/CN2021/095538 patent/WO2022246604A1/zh active Application Filing
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WO2022246604A1 (zh) | 2022-12-01 |
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