CN115699339A - 发光器件、显示装置和显示装置的制作方法 - Google Patents

发光器件、显示装置和显示装置的制作方法 Download PDF

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Publication number
CN115699339A
CN115699339A CN202180001238.4A CN202180001238A CN115699339A CN 115699339 A CN115699339 A CN 115699339A CN 202180001238 A CN202180001238 A CN 202180001238A CN 115699339 A CN115699339 A CN 115699339A
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China
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layer
light emitting
light
anisotropic
anisotropic nanostructures
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李广如
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Abstract

本公开实施例提供一种发光器件、显示装置和显示装置的制作方法。所述发光器件包括：第一电极层，所述第一电极层位于衬底基板的一侧；第二电极层，所述第二电极层位于所述第一电极层背离所述衬底基板的一侧；发光层，所述发光层位于所述第一电极层和所述第二电极层之间，包括多个各向异性纳米结构，且所述各向异性纳米结构的主延伸方向大致平行于所述衬底基板。

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PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN202180001238.4A 2021-05-24 2021-05-24 发光器件、显示装置和显示装置的制作方法 Pending CN115699339A (zh)

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PCT/CN2021/095538 WO2022246604A1 (zh) 2021-05-24 2021-05-24 发光器件、显示装置和显示装置的制作方法

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CN115699339A true CN115699339A (zh) 2023-02-03

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WO (1) WO2022246604A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010024652A2 (ko) * 2008-09-01 2010-03-04 경기대학교 산학협력단 무기 발광 소자
KR101675109B1 (ko) * 2010-08-06 2016-11-11 삼성전자주식회사 표면 플라즈몬 공명을 이용하여 발광 특성이 향상된 발광 소자 및 그 제조 방법
CN102760801B (zh) * 2011-04-29 2015-04-01 清华大学 发光二极管的制备方法
CN102760799B (zh) * 2011-04-29 2015-01-21 清华大学 发光二极管的制备方法
CN104737321B (zh) * 2012-07-31 2018-05-11 株式会社Lg化学 用于有机电子器件的基板
US9535279B2 (en) * 2013-10-23 2017-01-03 Lg Display Co., Ltd. Liquid crystal display including nanocapsule layer
CN106356465B (zh) * 2016-10-27 2020-01-14 Tcl集团股份有限公司 一种基于纳米棒的高效qled器件及显示器

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