CN115685420A - Narrow-band infrared absorber based on all-dielectric super surface - Google Patents
Narrow-band infrared absorber based on all-dielectric super surface Download PDFInfo
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- CN115685420A CN115685420A CN202211093602.7A CN202211093602A CN115685420A CN 115685420 A CN115685420 A CN 115685420A CN 202211093602 A CN202211093602 A CN 202211093602A CN 115685420 A CN115685420 A CN 115685420A
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Abstract
The invention provides a narrow-band infrared absorber based on an all-dielectric super surface, which comprises a substrate, a dielectric base layer, a dielectric loss layer and a dielectric resonator array, wherein the dielectric base layer is arranged on the substrate; the dielectric loss layer is arranged on the dielectric base layer; an array of dielectric resonators is disposed on the dielectric lossy layer. The medium resonator with high refractive index replaces a metal resonator, ohmic loss is avoided, narrow-band absorption with high quality factor can be achieved, the medium loss layer and the medium resonator array are designed in a layered mode, and narrow-band response is achieved through the medium resonator without loss in mid-infrared wave bands; the resonant effect is improved by introducing the dielectric loss layer, so that the absorption efficiency of the mid-infrared band is improved, and the problem that the loss and the absorption bandwidth of a resonator are contradictory is solved.
Description
Technical Field
The invention relates to the field of micro-nano optical devices, and particularly provides a narrow-band infrared absorber based on an all-dielectric super surface.
Background
The mid-infrared band mainly refers to infrared radiation with the wavelength of 2.5-25 mu m, comprises two atmospheric window regions of the mid-infrared band and the long-wave infrared band, covers a characteristic frequency region and a fingerprint region, has important significance for identifying functional groups and distinguishing compounds with similar structures, and has important application value in the fields of optical sensing, environmental monitoring, spectral detection and the like, so that the mid-infrared band narrow-band absorber is urgently needed to be developed for infrared spectrum detection, biological sensing, a spectrometer and the like. However, the natural material has the problems that the absorption efficiency is low, the absorption bandwidth can not be regulated and controlled, and the like, so that the application of the infrared absorber is hindered, and the design and the research and the development of the novel narrow-band infrared absorber have important significance.
The super surface is a two-dimensional form of a metamaterial, is formed by arranging sub-wavelength microstructures according to a certain rule, has electromagnetic properties independent of natural characteristics of materials, can realize specific spectral response through the design of the microstructures, and is widely researched in recent years. Super surface absorbers based on metal-dielectric-metal sandwich structures can achieve near 100% absorption at a particular wavelength. On one hand, due to the limit of the ohm's loss effect in the metal resonator, the absorber based on the metal material is difficult to realize narrow-band absorption; on the other hand, the photothermal effect of metal materials is not favorable for photoelectric conversion applied in biosensors and detectors. The super-surface based on the dielectric material has the characteristic of low loss, and can realize narrower resonance bandwidth and higher quality factor, but the low loss of the resonator affects the absorption efficiency of the absorber. For near-infrared bands, the absorption rate can be improved on the premise of losing a certain bandwidth by adopting a lossy dielectric material with a high refractive index; however, in the mid-infrared band, the size of the resonator is increased due to the lack of high refractive index dielectric material, and the dielectric resonator still faces the contradiction between the resonator loss and the absorption bandwidth.
Disclosure of Invention
In order to solve the problems, the invention provides a narrow-band infrared absorber based on a full-medium super surface, which mainly carries out layered design on a dielectric loss layer and a dielectric resonator array and realizes narrow-band response by utilizing a dielectric resonator without loss in a mid-infrared band; the resonance effect is improved by introducing the dielectric loss layer, the absorption efficiency of the mid-infrared band is improved, and the problem that the loss and the absorption bandwidth of the resonator are contradictory to each other is solved.
The invention provides a narrow-band infrared absorber based on an all-dielectric super surface, which comprises:
a substrate;
a dielectric base layer disposed on a substrate;
a dielectric loss layer disposed on the dielectric base layer;
a dielectric resonator array disposed on the dielectric loss layer;
the dielectric resonator array comprises N dielectric resonators arranged periodically, wherein N is a positive integer, and the dielectric resonators are microstructures;
the loss rate of the intermediate infrared band in the dielectric base layer or the dielectric resonator array is smaller than that in the dielectric loss layer;
the refractive index of the medium base layer in the mid-infrared band is smaller than that of the medium resonator in the mid-infrared band.
Preferably, the substrate is a silicon wafer or a quartz wafer.
Preferably, the dielectric base layer is made of calcium fluoride or magnesium fluoride, and the thickness of the dielectric base layer is 1000-100000 nm.
Preferably, the dielectric loss layer is made of a material having a loss ratio of not zero in the mid-infrared band and a thickness of 50 to 500nm.
Preferably, the dielectric loss layer is a patterned dielectric film or a complete continuous dielectric film.
Preferably, the material adopted by the dielectric resonator is germanium, and the thickness of the material is 100-10000 nm.
Preferably, the dielectric resonator is a cylindrical, rectangular or polygonal microstructure.
Compared with the prior art, the invention can obtain the following beneficial effects:
1. the invention uses the dielectric resonator with high refractive index to replace a metal resonator, has no ohmic loss, and can realize narrow-band absorption with high quality factor.
2. The dielectric loss layer and the dielectric resonator array are designed in a layered mode, and narrow-band response of the absorber is achieved in the lossless resonator; the resonant effect is improved by introducing the loss dielectric layer, the absorption efficiency of the mid-infrared band is improved, the contradiction problem between the loss of the resonator and the absorption bandwidth is overcome, and the high absorption of the narrow band of the mid-infrared band is realized.
3. The super-surface breaks through the limit of dispersion characteristics of natural materials, can realize narrow-band high absorption at any wavelength, and the structural scheme of the invention is expected to be expanded to other bands.
4. The polarization sensitivity of the invention can be adjusted and controlled by changing the design of the dielectric resonator, the polarization insensitivity can be adjusted and controlled, and the polarization selection can also be realized.
5. The super-surface structure of the invention is completely compatible with CMOS technology, and is beneficial to the integration with the existing devices.
Drawings
FIG. 1 is a schematic representation of the distribution of layers of an all-dielectric, super-surface based, narrow band infrared absorber provided in accordance with the present invention;
FIG. 2 is a side view of a provided all-dielectric, super-surface based narrowband infrared absorber according to an embodiment of the invention;
FIG. 3 is a top view of a provided all-dielectric-metasurface-based narrowband infrared absorber according to an embodiment of the invention;
FIG. 4 is a diagram illustrating an absorption spectrum of a provided all-dielectric-based super-surface narrow-band infrared absorber according to an embodiment of the present invention;
FIG. 5 is a side view of an all-dielectric, super-surface based narrowband infrared absorber provided in accordance with example two of the present invention;
FIG. 6 is a top view of an all-dielectric-metasurface-based narrowband infrared absorber provided in accordance with example two of the present invention;
FIG. 7 is an absorption spectrum of a narrow-band infrared absorber based on an all-dielectric-based super surface provided according to the second embodiment of the invention;
fig. 8 is an absorption spectrum of a narrow-band infrared absorber based on an all-dielectric-based super surface according to a third embodiment of the invention.
Wherein the reference numerals include: the dielectric resonator comprises a substrate 1, a dielectric base layer 2, a dielectric loss layer 3, a dielectric resonator array 4 and a dielectric resonator 4-1.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
The distribution of each layer of the narrow-band infrared absorber based on the all-dielectric super surface is as follows:
FIG. 1 illustrates a layer profile for an all-dielectric-based, narrow-band infrared absorber provided in accordance with the present invention.
As shown in fig. 1, the structure of the all-dielectric-super-surface-based narrow-band infrared absorber includes: the dielectric resonator comprises a substrate 1, a dielectric base layer 2, a dielectric loss layer 3 and a dielectric resonator array 4. A dielectric base layer 2 is disposed on the substrate 1; the dielectric loss layer 3 is arranged on the dielectric base layer 2; the dielectric resonator array 4 is disposed on the dielectric loss layer 3.
The substrate 1 is an integral supporting structure and can adopt a silicon wafer, a quartz wafer and the like. The substrate 1 of the narrow-band infrared absorber based on the all-dielectric super surface can be replaced by an uncooled infrared detection pixel unit, so that functional integration is realized.
The medium base layer 2 can adopt a material with low refractive index and low or no loss in the mid-infrared band, such as calcium fluoride or magnesium fluoride, and the thickness of the medium base layer 2 is set to be 1000-100000 nm.
The dielectric loss layer 3 can be made of a material with loss in the mid-infrared band, such as silicon nitride, and the thickness of the dielectric loss layer 3 is 50-500 nm. The dielectric loss layer 3 can be a patterned dielectric film or a complete continuous dielectric film.
The dielectric resonator array 4 includes N dielectric resonators arranged in a cycle, where N is a positive integer, and the dielectric resonators may be made of a material having a high refractive index in the mid-infrared band and having low or no loss, such as germanium. The dielectric resonator can be processed into a cylindrical, rectangular or polygonal microstructure by a micro-nano processing technology, and the thickness of the microstructure is 100-10000 nm. The dielectric resonator array 4 is used for generating high-quality narrow-band resonance, energy is localized in the N dielectric resonators and then conducted to the dielectric loss layer 3 for absorption, and the low-loss or lossless dielectric resonator material is beneficial to improving the quality factor of the absorber and obtaining narrow bandwidth. All absorbed energy is concentrated in the dielectric loss layer 3, and the high energy density can be obtained, so that the application of the all-dielectric super-surface based narrow-band infrared absorber in the detection and sensing fields is facilitated.
The following requirements are ensured: the loss rate of the middle infrared band in the dielectric base layer 2 or the dielectric resonator array 4 is smaller than that in the dielectric loss layer 3; the refractive index of the medium base layer 2 in the mid-infrared band is smaller than that of the medium resonator in the mid-infrared band.
The first embodiment is as follows:
FIG. 2 illustrates a side view configuration of a provided all-dielectric-based, super-surface narrowband infrared absorber, according to an embodiment of the invention.
Fig. 3 illustrates a top-down structure of a provided all-dielectric-metasurface-based narrowband infrared absorber according to an embodiment of the invention.
As shown in fig. 2 and fig. 3, the distribution of each layer of the all-dielectric-super-surface-based narrow-band infrared absorber in the first embodiment is the same as that in fig. 1, and is not repeated here. Wherein, the substrate 1 adopts a silicon chip; the dielectric base layer 2 adopts calcium fluoride, and the thickness of the dielectric base layer is 5000nm; the dielectric loss layer 3 is made of silicon nitride, and the thickness of the dielectric loss layer is 100nm; the dielectric loss layer 3 is patterned in a micro-nano processing mode and has the same diameter as the dielectric resonator 4-1; the dielectric resonator 4-1 is made of germanium, is cylindrical, and is subjected to micro-nano processing to realize a microstructure; the structural parameters of the germanium cylinder are 2000nm in diameter, 4380nm in height and 3380nm in period.
Fig. 4 shows an absorption spectrum of a provided all-dielectric-based super-surface narrowband infrared absorber according to an embodiment of the invention.
As shown in fig. 4, the time domain finite difference method is adopted to perform numerical simulation calculation on the all-dielectric-based super-surface narrowband infrared absorber in the first embodiment, and the following conclusion is obtained: for a mid-infrared wavelength band with the wavelength of 6.612 micrometers, the absorption rate of the invention is 89.6%, the bandwidth is 1.08nm, and the quality factor is 6122. Based on the data analysis, the method has effectiveness and superiority.
It should be noted that: the absorptivity of the invention is obtained by calculating formula A =1-T-R, wherein A represents absorptivity, T represents transmissivity, and R represents reflectivity; the figure of merit of the present invention is obtained according to the calculation formula Q = lambda/FWHM, where Q is the figure of merit, lambda represents the absorption center wavelength, and FWHM represents the full width at half maximum.
The second embodiment:
FIG. 5 shows a side view configuration of an all-dielectric-metasurface-based narrowband infrared absorber provided in accordance with an embodiment two of the invention.
Fig. 6 shows a top-view structure of an all-dielectric-metasurface-based narrowband infrared absorber provided according to the second embodiment of the invention.
As shown in fig. 5 and 6, the structure difference from the first embodiment is that: the dielectric loss layer 3 is a complete continuous dielectric film, and other structures, materials, and dimensions are the same as those of the first embodiment, which are not described herein again.
Fig. 7 shows an absorption spectrum of a full-dielectric-super-surface-based narrow-band infrared absorber provided according to the second embodiment of the invention.
As shown in fig. 7, the time domain finite difference method is adopted to perform numerical simulation calculation on the all-dielectric-based super-surface narrowband infrared absorber in the second embodiment, and the following conclusion is obtained: for the mid-infrared wavelength band of 6.612 microns, the absorption rate of the invention is 79.08%, the bandwidth is 4.27nm, and the quality factor is 1551. Based on the data analysis, the method has effectiveness and superiority.
Example three:
the structural difference from the first embodiment is as follows: the amplification of the dielectric resonator 4-1 is 1.08 times, namely the diameter of the germanium cylinder is 2160nm, the height of the germanium cylinder is 4730nm, and the period of the germanium cylinder is 3650nm.
Fig. 8 shows an absorption spectrum of a full-dielectric-super-surface-based narrow-band infrared absorber provided according to a third embodiment of the invention.
As shown in fig. 8, the time domain finite difference method is adopted to perform numerical simulation calculation on the all-dielectric-based super-surface narrowband infrared absorber in the third embodiment, and the following conclusion is obtained: the absorption rate of the invention is 82.30%, the bandwidth is 1.98nm, and the quality factor is 3680 at a mid-infrared wavelength band with the wavelength of 7.286 microns. Based on the data analysis, the method has effectiveness and superiority.
The verification of the first embodiment, the second embodiment and the third embodiment fully shows the effectiveness and superiority of the invention, and the invention has wide application prospect in the fields of food safety, environmental monitoring, biosensing, instant detection and the like.
While embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and should not be taken as limiting the invention. Variations, modifications, substitutions and changes to the embodiments described above will occur to those skilled in the art and are intended to be within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (7)
1. A narrow-band infrared absorber based on an all-dielectric super-surface, comprising: a substrate;
a dielectric base layer disposed on the substrate;
a dielectric loss layer disposed on the dielectric base layer;
a dielectric resonator array disposed on the dielectric lossy layer;
the dielectric resonator array comprises N dielectric resonators arranged periodically, wherein N is a positive integer, and the dielectric resonators are microstructures;
the loss rate of the middle infrared band in the dielectric base layer or the dielectric resonator array is smaller than that in the dielectric loss layer;
the refractive index of the medium base layer in the mid-infrared band is smaller than that of the medium resonator in the mid-infrared band.
2. The all-dielectric-based resurfacing narrowband infrared absorber of claim 1, wherein the substrate is a silicon wafer or a quartz wafer.
3. The all-dielectric-based super surface narrow-band infrared absorber according to claim 1, wherein the dielectric substrate is made of calcium fluoride or magnesium fluoride and has a thickness of 1000 to 100000nm.
4. The all-dielectric-metasurface-based narrow band infrared absorber of claim 1, wherein said dielectric loss layer is made of a material having a loss ratio in the mid-infrared band not equal to zero and a thickness of 50-500 nm.
5. The all-dielectric-metasurface-based narrow band infrared absorber of claim 4, wherein said dielectric loss layer is a patterned dielectric film or one complete continuous dielectric film.
6. The all-dielectric-metasurface-based narrowband infrared absorber of claim 1, wherein the dielectric resonator is made of germanium and has a thickness of 100-10000 nm.
7. The all-dielectric-metasurface-based narrow band infrared absorber of claim 6, wherein the dielectric resonator is a cylindrical, cubic or polygonal microstructure.
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| CN113848605A (en) * | 2021-11-16 | 2021-12-28 | 电子科技大学 | Narrow-band light polarization converter based on dielectric super-surface |
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| CN113848605A (en) * | 2021-11-16 | 2021-12-28 | 电子科技大学 | Narrow-band light polarization converter based on dielectric super-surface |
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