CN115683376A - Electronic component temperature detection method, electronic component execution system and vehicle - Google Patents
Electronic component temperature detection method, electronic component execution system and vehicle Download PDFInfo
- Publication number
- CN115683376A CN115683376A CN202110873611.7A CN202110873611A CN115683376A CN 115683376 A CN115683376 A CN 115683376A CN 202110873611 A CN202110873611 A CN 202110873611A CN 115683376 A CN115683376 A CN 115683376A
- Authority
- CN
- China
- Prior art keywords
- power device
- electronic component
- temperature
- value
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000012545 processing Methods 0.000 claims abstract description 16
- 238000005070 sampling Methods 0.000 claims description 42
- 238000001914 filtration Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 230000003321 amplification Effects 0.000 claims description 11
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 230000000630 rising effect Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Control Of Voltage And Current In General (AREA)
Abstract
The invention discloses an electronic component temperature detection method, an electronic component execution system and a vehicle, wherein the electronic component temperature detection method is used for the electronic component execution system, the electronic component execution system comprises a power device, and the method comprises the following steps: acquiring voltage values of two ends of a power device, and acquiring a current value of the power device; obtaining the current internal resistance value of the power device according to the voltage value and the current value; and obtaining the temperature value of the power device according to the current internal resistance value. According to the temperature detection method of the electronic component, a thermistor is not needed, the temperature detection precision is improved, the temperature saving in the power device can be directly obtained, the circuit wiring difficulty is reduced, and the data processing difficulty is reduced.
Description
Technical Field
The invention relates to the technical field of vehicles, in particular to an electronic component temperature detection method, an electronic component execution system and a vehicle.
Background
The working temperature of the electronic components has certain influence on the parameters and the performance of the electronic components, and under the condition of extreme high and low temperature, the working reliability of the electronic components is influenced, even the service life of the electronic components is prolonged. The operating temperature of the power device affects the parameters and performance of the power device. In the case of a continuous large current, the temperature of the power device increases, and the internal resistance further increases. Under the condition of poor heat dissipation conditions, the power device has the risks of burning and damage along with the temperature rise of the power device. In a vehicle, due to the limitation of vehicle space conditions, the volume of vehicle components is limited, and most of the components can only be cooled by a natural cooling method, so that temperature detection needs to be performed on high-power components. An electronic fan in a vehicle is installed near an engine, and in a high-Temperature area in summer, the ambient Temperature near the engine can reach 105 ℃, and an NTC (Negative Temperature Coefficient) thermistor is generally adopted to sample the Temperature.
In the related art, the relationship between the resistance value of the thermistor and the temperature is a nonlinear relationship, the MCU (Microcontroller Unit) has a high difficulty in processing the acquired data, and the NTC thermistor has a small slope of the curve of the resistance value and the temperature at a high temperature stage, so that the acquired temperature lowers the signal-to-noise ratio, and when the ambient temperature rises, the load increases, and the silicone grease connected to the heat sink ages, the temperature of the power device rises more seriously, and the thermistor is used for temperature detection, so that the accuracy of the detected value is low.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, one of the objectives of the present invention is to provide a method for detecting the temperature of an electronic component, which can collect the core temperature of the electronic component, thereby providing data support for accurately and quickly knowing the state of the electronic component.
The second objective of the present invention is to provide an electronic component executing system.
The invention also aims to provide a vehicle.
In order to achieve the above object, an electronic component temperature detecting method according to an embodiment of the first aspect of the present invention is applied to an electronic component executing system, where the electronic component executing system includes a power device, and the method includes: acquiring voltage values of two ends of the power device, and acquiring a current value of the power device; obtaining the current internal resistance value of the power device according to the voltage value and the current value; and obtaining the temperature value of the power device according to the current internal resistance value.
According to the method for detecting the temperature of the electronic component, the core temperature of the power device can be directly obtained after calculation processing by detecting the voltage sampling signals at the two ends of the power device and the current value of the power device, the processing difficulty of data is reduced, the accuracy of detecting the temperature value of the power device is improved, accurate detection can be realized at a high-temperature stage, the working state of the electronic component can be further determined and obtained according to the temperature value of the power device, and the damage probability of the electronic component can be effectively reduced. And a thermistor is not required to be arranged, and the difficulty of circuit wiring is reduced in the aspect of hardware setting.
In some embodiments of the present invention, the obtaining the voltage value across the power device includes: acquiring voltage sampling signals at two ends of the power device; amplifying the voltage sampling signal; and performing analog-to-digital conversion on the amplified voltage sampling signal to obtain the voltage value.
In some embodiments of the present invention, the obtaining the temperature value of the power device according to the current internal resistance value includes: calculating the quotient of the current internal resistance value and the standard internal resistance value of the power device at the standard temperature to obtain an internal resistance coefficient; and inquiring a junction temperature and internal resistance curve according to the internal resistance coefficient to obtain the temperature value corresponding to the current internal resistance value, wherein the junction temperature and internal resistance curve is a corresponding curve of the internal resistance coefficient and the temperature.
In some embodiments of the invention, the method further comprises: determining that the temperature value is greater than a temperature threshold value, and controlling the electronic component to stop running; or acquiring a sequence temperature value of the power device within a preset time, determining the rising or falling slope of the temperature of the power device according to the sequence temperature value, and controlling the working state of the electronic component according to the rising or falling slope of the temperature.
In order to achieve the above object, an electronic component executing system according to a second aspect of the present invention includes: a power device; the voltage detection module is connected with the power device and used for detecting voltage sampling signals at two ends of the power device; the current detection module is used for detecting the current value of the power device; and the control module is connected with the voltage detection module and the current detection module and is used for obtaining the current internal resistance value of the power device according to the voltage sampling signal and the current value and obtaining the temperature value of the power device according to the current internal resistance value.
According to the electronic component execution system provided by the embodiment of the invention, based on the architectures of the power device, the voltage detection module, the current detection module and the control module, a thermistor is not required to be arranged, based on the relation between the internal resistance of the power device and the internal junction temperature, the internal junction temperature of the power device is obtained by detecting the voltage sampling signals at two ends of the power device and the current value of the power device, and the difficulty in processing data is reduced. And the accurate detection of the temperature value can be realized at the high-temperature stage, so that the working condition of the power device can be known more accurately, the working state of the electronic component can be judged, the damage probability of the electronic component is effectively reduced, and the working reliability of the whole control panel is improved.
In some embodiments of the invention, the voltage detection module comprises: the power device comprises a differential amplifier and a peripheral configuration resistance unit, wherein the peripheral configuration resistance unit is used for configuring bias voltage and amplification times for the differential amplifier and acquiring voltage sampling signals at two ends of the power device, and the differential amplifier is used for amplifying the voltage sampling signals.
In some embodiments of the invention, the peripheral configuration resistance unit comprises: the bias voltage configuration resistor comprises a first resistor and a second resistor, wherein a first end of the first resistor is connected with a first preset power supply, a second end of the first resistor is connected with a first end of the second resistor, a second end of the second resistor is grounded, a first node is arranged between the second end of the first resistor and the first end of the second resistor, and the first node is connected with a forward input end of the differential amplifier; the amplification factor matching resistor comprises a third resistor, a fourth resistor and a fifth resistor; a first end of the third resistor is connected with a first end of the power device and a ground wire, and a second end of the third resistor is connected with the first node and a positive input end of the differential amplifier; a first end of the fourth resistor is connected with a second end of the power device and a protection ground, and a second end of the fourth resistor is connected with a negative input end of the differential amplifier; a first end of the fifth resistor is connected to the negative input end of the differential amplifier, and a second end of the fifth resistor is connected to the output end of the differential amplifier.
In some embodiments of the present invention, the electronic component executing system further includes: and the filtering module is connected with the output end of the differential amplifier and the control module and is used for filtering the amplified voltage sampling signal.
In some embodiments of the present invention, the control module includes an AD port, and the AD port is connected to the filtering module, and is configured to perform analog-to-digital conversion on the filtered voltage sampling signal to obtain a voltage value across the power device; or, the electronic component execution system further includes an analog-to-digital conversion module, where the analog-to-digital conversion module is connected to the filtering module and the control module, and is configured to perform analog-to-digital conversion on the filtered voltage sampling signal to obtain voltage values at two ends of the power device.
In order to achieve the above object, a vehicle according to a third aspect of the present invention includes: the driving circuit is connected with the electronic component; the electronic component execution system according to any one of the above embodiments, wherein the electronic component execution system is connected to the driving circuit.
According to the vehicle provided by the embodiment of the invention, the electronic component execution system is arranged in the vehicle, the voltage sampling signals at two ends of the power device in the electronic component execution system can be directly obtained, the current value of the power device can be directly obtained, and the temperature value of the power device can be obtained, so that the data processing difficulty is reduced. The working condition of the electronic components is judged and obtained according to the temperature value of the power device, the thermistor and the like are not required to be arranged, the working state of the electronic components is monitored at high precision, when the temperature is too high, the electronic components are protected from being overheated, the damage probability of the electronic components is reduced, and the stability and the safety of a vehicle are improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a flowchart of a method for detecting the temperature of an electronic component according to an embodiment of the present invention;
fig. 2 is a schematic diagram of junction temperature versus internal resistance of a MOS transistor according to an embodiment of the present invention;
fig. 3 is a schematic diagram showing the relationship between the junction temperature and the internal resistance of another MOS transistor according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a relationship between current values and internal resistances of MOS transistors under different voltage values according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for detecting the temperature of an electronic component according to another embodiment of the present invention;
FIG. 6 is a graph of internal resistance coefficient versus temperature for a power device in accordance with one embodiment of the present invention;
fig. 7 is a flowchart of a method for detecting the temperature of an electronic component according to another embodiment of the present invention;
FIG. 8 is a block diagram of an electronic component execution system in accordance with one embodiment of the present invention;
FIG. 9 is a block diagram of an electronic component execution system in accordance with another embodiment of the present invention;
fig. 10 is a schematic diagram of an electronic component execution system according to an embodiment of the invention;
fig. 11 is a block diagram of a vehicle according to an embodiment of the invention.
Reference numerals:
a vehicle 100;
an electronic component execution system 10, an electronic component 20, and a drive circuit 30;
the device comprises a power device 1, a voltage detection module 2, a current detection module 3, a control module 4 and a filtering module 5;
the motor comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a resistor R6, a resistor R7, a motor M, a capacitor C1 and a first preset power supply U1.
Detailed Description
Embodiments of the present invention will be described in detail below, the embodiments described with reference to the drawings being illustrative, and the embodiments of the present invention will be described in detail below.
A method of detecting the temperature of an electronic component according to an embodiment of the present invention is described below with reference to fig. 1 to 7.
In some embodiments of the present invention, as shown in fig. 1, a flowchart of a method for detecting a temperature of an electronic component according to an embodiment of the present invention is shown, where the method for detecting a temperature of an electronic component is used in an electronic component execution system, and the electronic component execution system includes a power device, where the power device may include a MOS (metal oxide semiconductor, metal-oxide semiconductor field effect Transistor) Transistor, an IGBT (Insulated Gate Bipolar Transistor), and other triodes having similar characteristics, and the method includes at least steps S1 to S3, which are described below.
S1, acquiring voltage values of two ends of a power device, and acquiring a current value of the power device.
In the embodiment, the voltage sampling signal V at two ends of the power device is obtained firstly AD . Then sampling the voltage signal V AD And carrying out amplification processing, wherein the signal is an analog signal. The amplified voltage sampling signal V is AD Performing analog-to-digital conversion, and obtaining the voltage value V at two ends of the power device by reverse deduction DSrms The voltage value V DSrms May be processed by a processor as a digital signal. The root mean square value of the current of the power device can be obtained by setting a current detection resistor and is recorded as a current value, and the current value of the power device is expressed as I DSrms 。
And S2, obtaining the current internal resistance value of the power device according to the voltage value and the current value.
In the embodiment, as shown in equation (1-1), the voltage value V of the power device is obtained DSrms Sum current value I DSrms Dividing to obtain the current internal resistance value of the power device and recording as R DSon 。
And S3, obtaining the temperature value of the power device according to the current internal resistance value.
In the embodiment, the internal resistance change and the temperature change of the power device have certain coefficient relation.
In the power devices, each taking MOS as an example, for example, as shown in fig. 2, a schematic diagram of a relation between junction temperature and internal resistance of a MOS transistor according to an embodiment of the present invention is shown, where a represents a quotient of a current internal resistance value and a standard internal resistance value of the power device at a standard temperature, and the standard temperature is 25 ℃. Under the condition that the current value is kept unchanged at 100A, the larger the internal resistance of the power device is, the larger the value a is, and the higher the temperature value of the power device is. The relation between the value a and the temperature value is linear between minus 60 ℃ and 27 ℃, and the relation between the value a and the temperature value is linear between 27 ℃ and 180 ℃, and the slopes of the straight lines in the two intervals are different.
For another example, as shown in fig. 3, a schematic diagram of the relationship between the junction temperature and the internal resistance of another MOS transistor according to an embodiment of the invention is shown, where T is j The temperature value T of the power device is represented under the condition that the current value is kept to be 100A j And internal resistance R DSon In a non-linear relationship, the temperature value T of the power device j Dependent on internal resistance R DSon Increases and increases with a smaller increase in the slope of the curve between about-60 c and 27 c and a larger increase in the slope of the curve between 27 c and 180 c.
In other embodiments, when the voltage across the power device reaches a certain value, such as T, at a certain ambient temperature j And =25 ℃, the change of the current value of the power device has little influence on the resistance value of the power device. Fig. 4 is a schematic diagram showing a relationship between current values and internal resistances of MOS transistors at different voltage values according to an embodiment of the present invention, wherein a curve 1 is a relationship between current values and internal resistances at a voltage of 5V; curve 2 shows the relationship curve between the current value and the internal resistance under the voltage of 5.5V; curve 3 represents the relationship curve between the current value and the internal resistance under the voltage of 6V; curve 4 shows the relationship curve between the current value and the internal resistance under the voltage of 6.5V; curve 5 shows the current value versus internal resistance at a voltage of 10V. It can be seen that, when the voltage value is equal to 10V, the resistance value of the power device hardly changes according to the change in the current value.
In the embodiment, as can be seen from fig. 2, 3 and 4, the relationship between the change of the general internal resistance of the common MOS transistor and the temperature is not an absolute linear relationship, but is a linear relationship within a certain range, and when the temperature is determined according to the resistance value of the power device, the temperature value does not need to be accurately calculated. In summary, for power devices with different specifications, based on the relationship between the internal resistance and the temperature, the R of the power device can be directly determined DSon Obtaining the temperature value T of the power device by the internal resistance j The processing difficulty of the data is reduced, and the data processing method can be used for processing the dataAccurately measuring temperature value T of power device j And the wiring can be directly carried out through the corresponding heat dissipation through holes without arranging a thermistor, so that the wiring difficulty of the circuit is reduced compared with a mode of measuring the temperature by adopting the thermistor.
According to the temperature detection method of the electronic component, the voltage sampling signal V at two ends of the power device can be detected AD And the current value I of the power device DSrms The internal junction temperature of the power device can be directly obtained after calculation, the processing difficulty of data is reduced, and the temperature value T of the power device is improved j The detection accuracy can be realized, the temperature can be accurately detected at a high temperature stage, and the temperature value T is determined according to the temperature value T of the power device j The working state of the electronic component can be further determined, and the damage probability of the electronic component can be effectively reduced. And a thermistor is not required to be arranged, and the difficulty of circuit wiring is reduced in the aspect of hardware setting.
In some embodiments of the present invention, as shown in fig. 5, a flowchart of a method for detecting a temperature of an electronic component according to another embodiment of the present invention is shown, where the step S3 includes a step S31 and a step S32, where the step S is obtained according to a current internal resistance value.
And S31, calculating the quotient of the current internal resistance value and the standard internal resistance value of the power device at the standard temperature to obtain the internal resistance coefficient. Wherein the standard temperature is 25 ℃.
Specifically, the current internal resistance value R of the power device DSon Has a certain coefficient relation with the standard internal resistance value of the power device at the standard temperature, and the standard internal resistance value of the power device at the standard temperature is recorded as R DSon(25℃) . As shown in formula (1-2), the current internal resistance value R of the power device is adjusted DSon Standard internal resistance value R of power device at standard temperature DSon(25℃) And dividing to calculate and obtain an internal resistance coefficient and recording as a.
And S32, inquiring a junction temperature and internal resistance curve according to the internal resistance coefficient to obtain a temperature value corresponding to the current internal resistance value, wherein the junction temperature and internal resistance curve is a corresponding curve of the internal resistance coefficient a and the temperature.
In an embodiment, for different power devices, according to the relationship between the internal resistance and the junction temperature, the curve relationship between the internal resistance coefficient and the temperature can be simplified into the curve relationship shown in fig. 6, fig. 6 is a graph of the relationship between the internal resistance coefficient and the temperature of the power device according to an embodiment of the present invention, wherein the value a is related to the temperature value T of the power device j Is larger, and at a =1, the temperature value T of most power devices is larger j ＝25℃。
Specifically, as shown in fig. 6, when the temperature value T of the power device is set j In the interval [ T 1 ，T 2 ]When the internal resistance coefficient a is within the range, the internal resistance coefficient a meets the operation relation shown in the formula (1-3), and the temperature value T of the power device shown in the formula (1-4) is obtained after calculation j . The temperature value T for the power device j The temperature value T of the power device shown in the formula (1-5) is satisfied in any interval j 。
In some embodiments of the present invention, as shown in fig. 7, a flowchart of a method for detecting a temperature of an electronic component according to another embodiment of the present invention is shown, where the method for detecting a temperature of an electronic component further includes step S4 or step S5, which is described below.
And S4, determining that the temperature value is greater than the temperature threshold value, and controlling the electronic component to stop running.
In an embodiment, the electronic component may comprise a motor, among othersThe temperature threshold can be set according to the performance of electronic components or power devices in the circuit, and when the temperature value T of the power device is j When the temperature is lower than the temperature threshold value, the normal operation of the electronic components is indicated, and when the temperature value T of the power device is lower than the temperature threshold value j When the temperature is higher than the temperature threshold value, the electronic component may be broken down or burnt, and at the moment, the circuit needs to be subjected to over-temperature protection to control the electronic component to stop running.
S5, acquiring a sequence temperature value of the power device within a preset time, determining the rising or falling slope of the temperature of the power device according to the sequence temperature value, and controlling the working state of the electronic component according to the rising or falling slope of the temperature.
Wherein, the temperature value T of the power device j When the temperature threshold value is not exceeded, the temperature value T of the power device in a period of time j Storing the temperature value T of the rate device in the time range j And carrying out statistics and analysis, calculating the temperature rising or falling slope, further knowing the working state of the electronic component, and setting a corresponding over-temperature protection strategy according to the working state of the electronic component so as to carry out over-temperature protection on the electronic component, thereby reducing the damage probability of the electronic component.
In some embodiments of the present invention, as shown in fig. 8, a block diagram of an electronic component executing system according to an embodiment of the present invention is shown, where the electronic component executing system 10 includes a power device 1, a voltage detecting module 2, a current detecting module 3, and a control module 4.
The power device 1 may include MOS transistors, IGBTs, and other transistors with similar characteristics. The voltage detection module 2 is connected with the power device 1 and is used for detecting voltage sampling signals V at two ends of the power device 1 AD The voltage sampling signal V AD Is an analog signal.
The current detection module 3 is used for detecting the current value I of the power device 1 DSrms . The root mean square value of the current of the power device can be obtained through setting the current detection resistor and is recorded as a current value I DSrms 。
The control module 4, the voltage detection module 2 and the current detection module 3 are allConnected for sampling the signal V according to the voltage AD Sum current value I DSrms Obtaining the current internal resistance value R of the power device 1 DSon And according to the current internal resistance value R DSon Obtaining a temperature value T of the power device 1 j 。
In particular, the control module 4 acquires a voltage sampling signal V AD Performing analog-to-digital conversion and reversely deducing a voltage value V DSrms . The control module 4 also acquires the voltage value V of the power device DSrms Sum current value I DSrms Obtaining the current internal resistance value R of the power device by division calculation DSon . Inquiring the junction temperature and the internal resistance curve according to the internal resistance coefficient a to obtain a temperature value T corresponding to the current internal resistance value j 。
According to the electronic component execution system 10 of the embodiment of the invention, based on the architectures of the power device 1, the voltage detection module 2, the current detection module 3 and the control module 4, a thermistor is not required to be arranged, and based on the relation between the internal resistance and the internal junction temperature of the power device 1, the voltage sampling signals V at two ends of the power device 1 are detected AD And the current value I of the power device 1 DSrms So as to obtain the internal junction temperature of the power device 1 and reduce the difficulty in data processing. And can realize the temperature value T at the high-temperature stage j The accurate detection, and then know power device 1 behavior more accurately, and then judge electronic components's operating condition, and then reduce electronic components's damage probability, improve the reliability of whole control panel work.
In some embodiments of the present invention, as shown in fig. 9, the block diagram of an electronic component executing system according to another embodiment of the present invention is shown, wherein the voltage detecting module 2 includes a differential amplifier 21 and a peripheral configuration resistance unit 22, and the peripheral configuration resistance unit 22 is configured to configure a bias voltage and an amplification factor for the differential amplifier 21 and collect a voltage value V across the power device 1 DSrms The differential amplifier 21 is used for comparing the voltage value V DSrms And carrying out amplification treatment.
In the embodiment, the amplification factor of the differential amplifier 21 can be set by setting the specifications of the components and the connection condition of the circuit in the peripheral configuration resistance unit 22.The differential amplifier 21 is used for converting the voltage value V DSrms And carrying out amplification treatment. For example, the operating voltage of an electronic fan system in a vehicle is generally 12V, the power is 200W, and the internal resistance of internal power devices such as MOS transistors is generally less than 5m Ω. Under the power-on state, the voltage drop at two ends of the MOS tube is less than 0.23V, the power supply voltage of the single chip microcomputer is generally set to be 3.3V, the difference between 0.23V and 3.3V is large, the acquisition of the voltage sampling signal V by the control module 4 is not facilitated, and the voltage sampling signal V acquired at the moment AD The power supply noise is large and other interference factors exist, the differential amplifier 2 can amplify the small voltage according to a preset amplification ratio, and meanwhile the anti-interference capability is improved.
In some embodiments of the present invention, as shown in fig. 10, a schematic diagram of an electronic component executing system according to an embodiment of the present invention is shown, where the power device 1 is exemplified by a MOS transistor. The peripheral configuration resistance unit 22 includes a bias voltage configuration resistance and an amplification matching resistance.
The bias voltage configuration resistor comprises a first resistor R1 and a second resistor R2, a first end of the first resistor R1 is connected with a first preset power supply U1, a second end of the first resistor R1 is connected with a first end of the second resistor R22, a second end of the second resistor R2 is grounded, a first node is arranged between the second end of the first resistor R1 and the first end of the second resistor R2, and the first node is connected with a forward input end of the differential amplifier 21. The voltage of the first preset power source U1 may be 3.4V.
Specifically, the first resistor R1 and the second resistor R2 provide an output bias voltage Vp for the differential amplifier 21, and even if no current flows in the power device 1, the output voltage is not zero, i.e., the bidirectional current flowing through the power device 1 can be detected. For example, when a current flows from the PGND terminal to the GND terminal, V is satisfied AD ＜V P When a current flows from the GND terminal to the PGND terminal, V is satisfied AD ＞V P 。
In an embodiment, the magnification matching resistor includes a third resistor R3, a fourth resistor R4, and a fifth resistor R5. A first end of the third resistor R3 is connected to the first end of the power device 1 and the ground, and a second end of the third resistor R3 is connected to the first node and the positive input end of the differential amplifier 21. The power device 1 may be a MOS transistor. A first end of the fourth resistor R4 is connected to the second end of the power device 21 and the protection ground, and a second end of the fourth resistor R4 is connected to the negative input end of the differential amplifier 21. A first end of the fifth resistor R5 is connected to the negative input terminal of the differential amplifier 21, and a second end of the fifth resistor R5 is connected to the output terminal of the differential amplifier 21.
Specifically, the resistance values of the third resistor R3, the fourth resistor R4 and the fifth resistor R5 need to be set according to the range of the current value of the power device. For example, when the current value is in the range of the range, V is satisfied AD < VCC, the output voltage does not exceed VCC, but the calculated voltage value may exceed VCC, and at this time, there is an overflow condition, that is, when the current value is greater than a certain value, the output voltage is constant, but the current value exceeding the range cannot be detected. Therefore, it is necessary to maintain V as much as possible AD Within the range of 0-VCC, the sampling precision requirement of the input port of the control module 4 for obtaining the voltage sampling signal is met, the measurement precision can be improved, and the noise interference is small.
The differential amplifier 21 further has the characteristics of virtual short and virtual break, that is, when the differential amplifier 21 is in a linear state, the two input ends can be regarded as equipotentials, when the differential amplifier 21 is in a linear state, the two input ends can be regarded as equivalent open circuits, according to the characteristics of the virtual short and the virtual break, and in combination with the circuit shown in fig. 7, the control module 4 takes the MCU as an example, as shown in formulas (1-6), and takes the voltage as 3.4V as an example, and the control module 4 samples the signal V according to the received voltage AD Obtaining the voltage value V of the power device DSrms . Combining the formula (1-6) with the formula (1-1) and the formula (1-2), obtaining the internal resistance coefficient a shown in the formula (1-7), and searching the interval to which the a value belongs, such as the interval [ a ] in the relation curve chart shown in fig. 6, for the obtained a value n-1 ,a n ]The interval [ a ] n-1 ，a n ]Substituting the formula (1-7) into the formula (1-5) to obtain the temperature value T of the power device j . According to the temperature value T of the power device j The working state of the electronic component is determined, and the electronic component is monitored by combining the set over-temperature protection strategy, so that the high-precision monitoring function is realizedThe operating state of the device 1, and thus the probability of damage to the power device.
In some embodiments of the present invention, as shown in fig. 10, the electronic component executing system 10 further includes a filtering module 5, where the filtering module 5 is connected to the output end of the differential amplifier 21 and the control module 4, and is configured to perform filtering processing on the amplified voltage sampling signal.
Wherein, filtering module 5 includes an RC filter of constituteing by resistance R6 and electric capacity C1, filtering module 5 can the filtering instantaneous peak voltage, can obtain the input port of voltage sampling signal to control module 4 and carry out certain protection, can improve the interference killing feature again, resistance R6 and electric capacity C1's resistance can be set for under the laboratory condition or as required, resistance R6 and electric capacity C1's resistance also can not be too big, otherwise can attenuate useful signal, and produce the time delay of one to the signal, can not respond to the signal in time.
In some embodiments of the present invention, as shown in fig. 10, the control module 4 includes an AD port, and the AD port is connected to the filtering module 5, and is configured to perform analog-to-digital conversion on the filtered voltage sampling signal to obtain a voltage value across the power device 1. The control module 4 can be a single chip microcomputer, an AD port is arranged on the single chip microcomputer, the voltage sampling signal after the filtering processing is input into the control module 4 through the AD port, and the AD port can convert the analog signal output after the amplifying and filtering processing into a digital signal which can be processed by the control module 4.
Or, when the AD port is not set in the control module 4, the electronic component execution system 10 further includes an analog-to-digital conversion module, which is connected to the filtering module 5 and the control module 4, and is configured to perform analog-to-digital conversion on the filtered voltage sampling signal to obtain a voltage value at two ends of the power device. For example, a chip with an AD conversion function is added as an analog-to-digital conversion module, the filtered analog signal is input to the digital-to-analog conversion module for conversion to obtain a digital signal, and then the digital signal is transmitted to the control module 4 for calculation.
In some embodiments of the present invention, as shown in fig. 11, a block diagram of a vehicle according to an embodiment of the present invention is shown, where the vehicle 100 includes an electronic component 20, a driving circuit 30, and the electronic component executing system 10 of any one of the above embodiments.
In the embodiment, the driving circuit 30 is connected to the electronic component 20, and is used for driving the electronic component 20 to operate. For example, as shown in fig. 10, the electronic component 20 may be a motor M, and the driving circuit 30 may be a three-phase bridge circuit and a resistor R7. The electronic component executing system 10 is connected to the driving circuit 30, and executes the method for detecting the temperature of the single-component according to any of the above embodiments when determining the temperature value T of the power component 1 j If the temperature is higher than the temperature threshold, the electronic component executing system 10 controls the driving circuit 30 to be disconnected to control the electronic component to stop operating, so as to implement over-temperature protection on the electronic component 20.
According to the vehicle 100 of the embodiment of the invention, the electronic component execution system 10 is arranged in the vehicle 100, and the voltage sampling signal V at two ends of the power device 1 in the electronic component execution system 10 can be directly obtained AD And the current value I of the power device 1 DSrms Obtaining a temperature value T of the power component 1 j And the data processing difficulty is reduced. And according to the temperature value T of the power element 1 j The working condition of the electronic component 20 is judged, a thermistor and the like are not required to be arranged, the working state of the electronic component 20 is monitored at high precision, and when the temperature is too high, the electronic component 20 is protected from being overheated, so that the damage probability of the electronic component 20 is reduced, and the stability and the safety of the vehicle 100 are improved.
Other configurations and operations of the vehicle 100 according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. The method for detecting the temperature of the electronic component is used for an electronic component execution system, the electronic component execution system comprises a power device, and the method comprises the following steps:
acquiring voltage values of two ends of the power device, and acquiring a current value of the power device;
obtaining the current internal resistance value of the power device according to the voltage value and the current value;
and obtaining the temperature value of the power device according to the current internal resistance value.
2. The method for detecting the temperature of the electronic component as claimed in claim 1, wherein the obtaining the voltage value across the power device comprises:
acquiring voltage sampling signals at two ends of the power device;
amplifying the voltage sampling signal;
and performing analog-to-digital conversion on the amplified voltage sampling signal to obtain the voltage value.
3. The method for detecting the temperature of the electronic component according to claim 1, wherein the obtaining the temperature value of the power device according to the current internal resistance value includes:
calculating the quotient of the current internal resistance value and the standard internal resistance value of the power device at the standard temperature to obtain an internal resistance coefficient;
and inquiring a junction temperature and internal resistance curve according to the internal resistance coefficient to obtain the temperature value corresponding to the current internal resistance value, wherein the junction temperature and internal resistance curve is a corresponding curve of the internal resistance coefficient and the temperature.
4. The method for detecting the temperature of the electronic component as claimed in claim 1, further comprising:
determining that the temperature value is greater than a temperature threshold value, and controlling the electronic component to stop running;
or acquiring a sequence temperature value of the power device within a preset time, determining the rising or falling slope of the temperature of the power device according to the sequence temperature value, and controlling the working state of the electronic component according to the rising or falling slope of the temperature.
5. An electronic component executing system, comprising:
a power device;
the voltage detection module is connected with the power device and is used for detecting voltage sampling signals at two ends of the power device;
the current detection module is used for detecting the current value of the power device;
and the control module is connected with the voltage detection module and the current detection module and is used for obtaining the current internal resistance value of the power device according to the voltage sampling signal and the current value and obtaining the temperature value of the power device according to the current internal resistance value.
6. The electronic component executing system according to claim 5, wherein the voltage detecting module includes:
the power device comprises a differential amplifier and a peripheral configuration resistance unit, wherein the peripheral configuration resistance unit is used for configuring bias voltage and amplification times for the differential amplifier and acquiring voltage sampling signals at two ends of the power device, and the differential amplifier is used for amplifying the voltage sampling signals.
7. The electronic component executing system according to claim 6, wherein the peripheral arrangement resistance unit includes:
the bias voltage configuration resistor comprises a first resistor and a second resistor, wherein a first end of the first resistor is connected with a first preset power supply, a second end of the first resistor is connected with a first end of the second resistor, a second end of the second resistor is grounded, a first node is arranged between the second end of the first resistor and the first end of the second resistor, and the first node is connected with a forward input end of the differential amplifier;
the amplification factor matching resistor comprises a third resistor, a fourth resistor and a fifth resistor;
the first end of the third resistor is connected with the first end of the power device and the ground wire, and the second end of the third resistor is connected with the first node and the positive input end of the differential amplifier;
a first end of the fourth resistor is connected with a second end of the power device and a protection ground, and a second end of the fourth resistor is connected with a negative input end of the differential amplifier;
the first end of the fifth resistor is connected with the negative input end of the differential amplifier, and the second end of the fifth resistor is connected with the output end of the differential amplifier.
8. The electronic component execution system according to claim 6, further comprising:
and the filtering module is connected with the output end of the differential amplifier and the control module and is used for filtering the amplified voltage sampling signal.
9. The electronic component execution system of claim 8,
the control module comprises an AD port, and the AD port is connected with the filtering module and used for carrying out analog-to-digital conversion on the voltage sampling signal after filtering processing so as to obtain voltage values at two ends of the power device;
or, the electronic component execution system further includes an analog-to-digital conversion module, where the analog-to-digital conversion module is connected to the filtering module and the control module, and is configured to perform analog-to-digital conversion on the filtered voltage sampling signal to obtain voltage values at two ends of the power device.
10. A vehicle, characterized by comprising:
the driving circuit is connected with the electronic component;
the electronic component execution system as claimed in any one of claims 5 to 9, the electronic component execution system being connected to the drive circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110873611.7A CN115683376A (en) | 2021-07-30 | 2021-07-30 | Electronic component temperature detection method, electronic component execution system and vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110873611.7A CN115683376A (en) | 2021-07-30 | 2021-07-30 | Electronic component temperature detection method, electronic component execution system and vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115683376A true CN115683376A (en) | 2023-02-03 |
Family
ID=85059172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110873611.7A Pending CN115683376A (en) | 2021-07-30 | 2021-07-30 | Electronic component temperature detection method, electronic component execution system and vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115683376A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105431745A (en) * | 2013-06-13 | 2016-03-23 | 西门子公司 | Provision of information on an ageing status of a semiconductor component |
| CN206313695U (en) * | 2016-12-23 | 2017-07-07 | 广东高标电子科技有限公司 | Power device control and overheat protector system for electric machine controller |
| CN109994993A (en) * | 2017-12-28 | 2019-07-09 | 瑞萨电子株式会社 | Power conversion device and semiconductor device |
| US20200112245A1 (en) * | 2016-03-29 | 2020-04-09 | Mitsubishi Electric Corporation | Overheat protection control device and vehicle- mounted power circuit device |
| CN112229530A (en) * | 2020-09-30 | 2021-01-15 | 中国科学院电工研究所 | SiC-based MOSFET junction temperature online monitoring system and online monitoring method |
| CN113030682A (en) * | 2021-03-12 | 2021-06-25 | 中国科学院电工研究所 | High-precision junction temperature online monitoring method and system |
-
2021
- 2021-07-30 CN CN202110873611.7A patent/CN115683376A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105431745A (en) * | 2013-06-13 | 2016-03-23 | 西门子公司 | Provision of information on an ageing status of a semiconductor component |
| US20200112245A1 (en) * | 2016-03-29 | 2020-04-09 | Mitsubishi Electric Corporation | Overheat protection control device and vehicle- mounted power circuit device |
| CN206313695U (en) * | 2016-12-23 | 2017-07-07 | 广东高标电子科技有限公司 | Power device control and overheat protector system for electric machine controller |
| CN109994993A (en) * | 2017-12-28 | 2019-07-09 | 瑞萨电子株式会社 | Power conversion device and semiconductor device |
| CN112229530A (en) * | 2020-09-30 | 2021-01-15 | 中国科学院电工研究所 | SiC-based MOSFET junction temperature online monitoring system and online monitoring method |
| CN113030682A (en) * | 2021-03-12 | 2021-06-25 | 中国科学院电工研究所 | High-precision junction temperature online monitoring method and system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109597966B (en) | Method for estimating junction temperature of IGBT (insulated Gate Bipolar transistor) of power element in motor controller | |
| CN101710694B (en) | Car engine cooling fan blocking/overcurrent protection system and method | |
| US8436600B2 (en) | Apparatus for detecting a state of operation of a power semiconductor device | |
| US8198838B2 (en) | Circuit for controlling rotation speed of computer fan | |
| CN109342913B (en) | IGBT junction temperature monitoring system | |
| CN110190587B (en) | Overcurrent protection method, overcurrent protection circuit, intelligent power module and air conditioner | |
| CN114839499A (en) | Power device junction temperature on-line monitoring system based on dynamic threshold voltage | |
| CN113315089A (en) | High power supply rejection ratio load switch circuit and control method thereof | |
| CN213364867U (en) | Sampling circuit without sampling resistor and driving circuit | |
| CN115683376A (en) | Electronic component temperature detection method, electronic component execution system and vehicle | |
| CN213274628U (en) | Circuit for improving NTC temperature sampling precision | |
| CN101634667B (en) | Method and circuit for measuring average current of direct current motor | |
| CN116754915A (en) | Working junction temperature monitoring system and method of semiconductor switching device | |
| CN2837524Y (en) | Motor vehicle fan controller | |
| CN203551125U (en) | Over-temperature alarm circuit | |
| CN202544990U (en) | Fan controller of motor vehicle | |
| CN115047953A (en) | Server heat dissipation method, system, device and medium | |
| CN111473881B (en) | Temperature sampling device and system | |
| CN217155626U (en) | Temperature acquisition circuit for frequency converter | |
| CN205563312U (en) | Take fan control circuit's servo driver | |
| CN118444121B (en) | Power device junction temperature detection method and circuit based on switch delay | |
| CN220552951U (en) | Power amplifier current clamping device, power amplifier protection system and integrated circuit test board card | |
| CN218646468U (en) | Temperature detection device of power device | |
| CN220454727U (en) | Low-cost temperature sampling circuit | |
| CN115406492B (en) | Thermal diffusion type switch with protection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |