CN115678346B - PbS quantum dot ink, preparation method and application thereof in solar cell - Google Patents
PbS quantum dot ink, preparation method and application thereof in solar cell Download PDFInfo
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Abstract
The invention discloses PbS quantum dot ink, a preparation method and application thereof in a solar cell. Adding lead iodide, N, N-diphenyl thiourea and small organic molecules into a reaction container, adding N, N-dimethylformamide, stirring to obtain a clear transparent precursor solution, injecting butylamine, adding toluene after the reaction is finished, performing aftertreatment to obtain PbS quantum dots, dissolving the PbS quantum dots in an N, N-dimethylformamide solvent to obtain PbS quantum dot ink, and preparing the PbS quantum dot solar cell by taking the PbS quantum dots as an active layer. According to the invention, by introducing different small organic molecules, highly passivated PbS quantum dot ink is directly prepared in one step under the action of butylamine, the defect state of the PbS ink is greatly reduced, the PbS quantum dot ink is applied to a PbS quantum dot solar cell device, the lowest voltage loss with the efficiency exceeding 10% is obtained, and the performance of the solar cell device is remarkably improved.
Description
Technical Field
The invention relates to the technical field of functional materials, in particular to highly passivated PbS quantum dot ink, a synthesis method and application thereof in solar cells.
Background
The PbX (X=S, se, te) of the IV-IV group has a large Bohr radius, so that the quantum confinement effect of the PbX is particularly remarkable, the band gap of the quantum dot material can be greatly adjusted through size adjustment, the absorption spectrum of the PbX is well matched with the solar spectrum reaching the earth surface, and the PbX has the characteristics of large absorption coefficient, high electron mobility, adjustable energy level and the like, so that the IV-IV group quantum dot is the most popular photovoltaic nano material for research at the present stage, and is expected to become a low-cost high-efficiency solar cell for a new generation solution process.
At present, long-chain organic matters are required to be used as ligands for controlling the size, the shape and the like of the PbS quantum dots, and the long-chain organic matters are required to be removed through complex ligand exchange in the process of subsequently preparing devices, so that the thin film of the PbS quantum dots can carry out charge transmission. Prior to the present invention, the literature reported a method of synthesizing PbS quantum dots at room temperature that can be directly used for solar cell fabrication (see, literature: nat com 2019 10, 5136). However, since the quantum dot only has lead-iodine complex for passivating the surface of the quantum dot in the synthesis process, a large number of defect states exist on the surface of the quantum dot, and the photoelectric conversion efficiency of the solar cell is limited. Because PbS quantum dot solar cells have greater voltage loss than traditional silicon solar cells, and current new perovskite solar cells, better passivation of the PbS surface is required to reduce the voltage loss of the device. In order to reduce the voltage loss of PbS quantum dot solar cells, it is desirable to develop a simple and effective highly passivated PbS quantum dot ink.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides PbS quantum dot ink for realizing in-situ high passivation of PbS quantum dots in one step in the synthesis process, a preparation method and application in a solar cell, and the obtained PbS quantum dot solar cell has the minimum voltage loss with the efficiency exceeding 10%.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is to provide a preparation method of PbS quantum dot ink, which comprises the following steps:
(1) Adding lead iodide, N, N-diphenyl thiourea and organic small molecules into a reaction container, adding N, N-dimethylformamide, wherein the ratio of the organic small molecules to the lead iodide is 300:1-30:1, and the ratio of the N, N-dimethylformamide to the lead iodide is 120:1-60:1, and the organic small molecules are one of mercaptopropionic acid, propanethiol, mercaptoethylamine, mercaptoethanol and ethanedithiol; stirring at room temperature to obtain clear transparent precursor solution;
(2) Injecting butylamine into the precursor solution, adding toluene after the reaction, centrifuging, discarding the supernatant, and vacuum-pumping to obtain PbS quantum dots;
(3) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
The preferred scheme of the invention is that the ratio of the organic small molecule to the lead iodide is one of 300:1, 120:1, 60:1 and 30:1; the mass ratio of toluene to lead iodide is 60:1-30:1; the volume ratio of the butylamine to the N, N-dimethylformamide in the step (1) is 0.05:1-0.1:1;
the reaction temperature of the step (2) of the preparation method of the PbS quantum dot ink is 0-10 ℃.
The technical scheme of the invention comprises the PbS quantum dot ink obtained by the preparation method.
And the application of the PbS quantum dot ink in a solar cell, wherein the PbS quantum dot is used as an active layer to prepare the PbS quantum dot solar cell.
The application of the PbS quantum dot ink in the solar cell is characterized in that the PbS quantum dot ink is spin-coated on an ITO glass substrate with an electron transmission layer, then an acid coated PbS quantum dot layer is spin-coated to prepare a hole transmission layer, and then an anode is evaporated to prepare the PbS quantum dot solar cell.
The principle of the invention is as follows: different organic small molecules are directly introduced in the synthesis process of the quantum dot, the organic small molecules not only can passivate the surface of the quantum dot in situ, but also can further passivate the surface of the quantum dot by attracting surface ions through ion dipole force, so that the in situ passivation of the PbS quantum dot ink in the synthesis process is realized, and the PbS quantum dot ink is applied to a PbS quantum dot solar cell device, and the lowest voltage loss with the efficiency exceeding 10% can be obtained.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention adopts the technical proposal that different small organic molecules are introduced into the directly synthesized quantum dot ink in situ; in the reaction process, the organic micromolecules not only can passivate the surface of the quantum dot in situ, but also can further passivate the surface of the quantum dot by attracting surface ions through the ion dipole force, so that the in-situ passivation of the PbS quantum dot ink in the synthesis process is realized in one step, and the process is simple and effective.
2. The method is applied to a PbS quantum dot solar cell device, and the conventional spin coating process is adopted to obtain the lowest voltage loss with the efficiency exceeding 10%, so that the performance of the solar cell device is obviously improved.
Drawings
Fig. 1 is an ultraviolet-visible absorption spectrum of PbS quantum dots synthesized by using different small organic molecules according to examples 1 to 5 of the present invention, wherein the mass ratio of lead iodide to the small organic molecule is 60:1.
Fig. 2 is a photoluminescence spectrum of PbS quantum dots synthesized by using different small organic molecules according to examples 1 to 5 of the present invention, wherein the mass ratio of lead iodide to small organic molecules is 60:1.
Fig. 3 is a graph of quantum yields of PbS quantum dots synthesized using different small organic molecules according to examples 1 to 5 of the present invention, wherein the mass ratio of lead iodide to small organic molecules is 60:1.
Fig. 4 is a transient fluorescence diagram of PbS quantum dots synthesized by using different small organic molecules according to examples 1 to 5 of the present invention, wherein the mass ratio of lead iodide to small organic molecules is 60:1.
Fig. 5 is an X-ray photoelectron spectrum S spectrum of PbS quantum dots synthesized by using different small organic molecules according to examples 1 to 5 of the present invention, wherein the mass ratio of lead iodide to the small organic molecule is 60:1.
Fig. 6 is an ultraviolet-visible absorption spectrum of PbS quantum dots synthesized using different levels of mercaptopropionic acid organic small molecules according to example 5 of the present invention.
Fig. 7 is a photoluminescence spectrum of PbS quantum dots synthesized using different levels of mercaptopropionic acid organic small molecules according to example 5 of the present invention.
Fig. 8 is a transient fluorescence image of PbS quantum dots synthesized using different levels of mercaptopropionic acid organic small molecules according to example 5 of the present invention.
Fig. 9 is an X-ray photoelectron spectrum S spectrum of PbS quantum dots synthesized in example 5 of the present invention using different levels of mercaptopropionic acid organic small molecules.
Fig. 10 is a device performance diagram of PbS quantum dots synthesized using small organic molecules of mercaptopropionic acid according to example 6 of the present invention, wherein the mass ratio of lead iodide to mercaptopropionic acid is 60:1.
Fig. 11 is a graph comparing voltage loss performance of PbS solar cells prepared using PbS quantum dots synthesized from small organic molecules of mercaptopropionic acid according to example 6 of the present invention with that of the prior art.
Detailed Description
The technical scheme of the invention is further described below with reference to the attached drawings and specific embodiments.
Example 1
The embodiment provides highly passivated PbS quantum dot ink, which is prepared by the following steps:
1) Preparing a precursor solution: 2.766 g (6 mmol) lead iodide, 228 mg (1 mmol) N, N-diphenyl thiourea, 16ul of propanethiol (the mass ratio of the lead iodide to the propanethiol is 60:1) and 9mL of N, N-dimethylformamide are added into a 20mL single-neck flask, and the mixture is stirred at room temperature until the precursor is completely dissolved, so as to obtain a clear transparent precursor solution for later use;
2) 1mL of butylamine was injected into the one-necked flask at a temperature of 0℃and the reaction was continued with stirring for 10 minutes. Transferring the reaction solution into a centrifuge tube, adding toluene until the reaction solution becomes turbid, centrifuging at 8000 rpm for 5 min, and removing the supernatant; the resulting product was dried under vacuum and stored in a glove box.
3) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
The highly passivated PbS quantum dot ink prepared in this example has a UV-Vis absorption spectrum as shown in fig. 1, a photoluminescence spectrum as shown in fig. 2, a fluorescence quantum yield as shown in fig. 3, a transient fluorescence as shown in fig. 4, and an x-ray photoelectron spectrum as shown in fig. 5.
Example 2
Preparation of highly passivated PbS quantum dot ink:
1) Preparing a precursor solution: 2.766 g (6 mmol) lead iodide, 228 mg (1 mmol) N, N-diphenyl thiourea, 16ul of mercaptoethylamine (the mass ratio of the lead iodide to the mercaptoethylamine is 60:1) and 9mL of N, N-dimethylformamide are added into a 20mL single-neck flask, and the mixture is stirred at room temperature until the precursor is completely dissolved, so as to obtain a clear transparent precursor solution for later use;
2) 1mL of butylamine was injected into the one-necked flask at a temperature of 0℃and the reaction was continued with stirring for 10 minutes. Transferring the reaction solution into a centrifuge tube, adding toluene until the reaction solution becomes turbid, centrifuging at 8000 rpm for 5 min, and removing the supernatant; the resulting product was dried under vacuum and stored in a glove box.
3) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
The UV-Vis absorption spectrum of the PbS quantum dot ink provided by the embodiment is shown in fig. 1, the photoluminescence spectrum is shown in fig. 2, the fluorescence quantum yield is shown in fig. 3, the transient fluorescence is shown in fig. 4, and the X-ray photoelectron spectrum is shown in fig. 5.
Example 3
Preparation of highly passivated PbS quantum dot ink:
1) Preparing a precursor solution: 2.766 g (6 mmol) of lead iodide, 228 mg (1 mmol) of N, N-diphenyl thiourea, 16ul of mercaptoethanol (the mass ratio of the lead iodide to the mercaptoethanol is 60:1) and 9mL of N, N-dimethylformamide are added into a 20mL single-neck flask, and the mixture is stirred at room temperature until the precursor is completely dissolved, so as to obtain a clear transparent precursor solution for later use;
2) 1mL of butylamine was injected into the one-necked flask at a temperature of 0℃and the reaction was continued with stirring for 10 minutes. Transferring the reaction solution into a centrifuge tube, adding toluene until the reaction solution becomes turbid, centrifuging at 8000 rpm for 5 min, and removing the supernatant; the resulting product was dried under vacuum and stored in a glove box.
3) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
The UV-Vis absorption spectrum of the PbS quantum dot ink provided by the embodiment is shown in fig. 1, the photoluminescence spectrum is shown in fig. 2, the fluorescence quantum yield is shown in fig. 3, the transient fluorescence is shown in fig. 4, and the X-ray photoelectron spectrum is shown in fig. 5.
Example 4
Preparation of highly passivated PbS quantum dot ink:
1) Preparing a precursor solution: 2.766 g (6 mmol) of lead iodide, 228 mg (1 mmol) of N, N-diphenylthiourea, 16ul of ethanedithiol (the mass ratio of lead iodide to ethanedithiol is 60:1) and 9mL of N, N-dimethylformamide are added to a 20mL single-neck flask, and stirred at room temperature until the precursor is completely dissolved, to obtain a clear transparent precursor solution for later use.
2) 1mL of butylamine was injected into the one-necked flask at a temperature of 0℃and the reaction was continued with stirring for 10 minutes. Transferring the reaction solution into a centrifuge tube, adding toluene until the reaction solution becomes turbid, centrifuging at 8000 rpm for 5 min, and removing the supernatant; the resulting product was dried under vacuum and stored in a glove box.
3) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
The UV-Vis absorption spectrum of the PbS quantum dot ink provided by the embodiment is shown in fig. 1, the photoluminescence spectrum is shown in fig. 2, the fluorescence quantum yield is shown in fig. 3, the transient fluorescence is shown in fig. 4, and the X-ray photoelectron spectrum is shown in fig. 5.
Example 5
The embodiment adopts the highly passivated PbS quantum dot ink synthesized by mercaptopropionic acid with different contents.
Preparation of highly passivated PbS quantum dots:
1) Preparing a precursor solution: 2.766 g (6 mmol) of lead iodide, 228 mg (1 mmol) of N, N-diphenylthiourea and 9mL of N, N-dimethylformamide were added to a 20mL single-neck flask, stirred at room temperature until the precursor was completely dissolved, and 3 parts of solution was prepared by the same method for use.
2) To the above 3 parts of the solution were added 8ul (the mass ratio of lead iodide to mercaptopropionic acid was 120: 1) 16ul (60: 1) 32ul (30: 1) To obtain clear transparent precursor solutions of mercaptopropionic acid with different contents.
3) 1mL of butylamine was charged into each of the 3-part single-neck flasks, and the reaction was continued with stirring for 10 minutes. Transferring the reaction solution into a centrifuge tube, adding toluene until the reaction solution becomes turbid, centrifuging at 8000 rpm for 5 min, and removing the supernatant; the resulting product was dried under vacuum and stored in a glove box.
4) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
In the embodiment, highly passivated PbS quantum dots synthesized by using mercaptopropionic acid with different contents are adopted, the UV-Vis absorption spectrum of the PbS quantum dots is shown in fig. 6, the photoluminescence spectrum is shown in fig. 7, the transient fluorescence is shown in fig. 8, and the X-ray photoelectron spectrum is shown in fig. 9. The results in FIG. 9 show that the ratio of lead iodide to mercaptopropionic acid is 60:1, which gives the best performance.
Example 6
The embodiment provides a solar cell of low-voltage-loss PbS quantum dot ink.
The solar photovoltaic device comprises glass, a cathode layer attached to the glass, an electron transport layer attached to the cathode layer, a highly passivated PbS quantum dot layer attached to the electron transport layer, a hole transport layer attached to the PbS quantum dot layer of the oleic acid ligand provided by the prior art, and an anode layer attached to the hole transport layer. The hole transport layer is a conventionally used thioglycollic acid ligand exchanged oleic acid ligand PbS quantum dot. The cathode layer is ITO; the electron transport layer is zinc oxide and the anode layer is gold.
In this embodiment, the specific preparation method is as follows: and sequentially spin-coating a zinc oxide nanoparticle solution, a highly passivated PbS quantum dot solution and an oleic acid ligand PbS quantum dot solution on the washed conductive glass substrate, and evaporating 100 nano gold (Au) after thioglycollic acid ligand exchange to obtain the conductive glass substrate.
In this example, the highly passivated PbS quantum dots provided in example 5 were dissolved in N, N-dimethylformamide solvent at a mass/volume concentration of 700 mg/ml using a mass ratio of 60:1 of lead iodide to mercaptopropionic acid, the spin-coating speed of the solution was 2000 rpm, and the duration was 60 seconds.
The structure of the device: glass/ITO/ZnO/PbS-I/PbS-EDT/Au.
Referring to fig. 11, the voltage loss comparison result of the PbS solar cell prepared in this example and the prior art sample is shown; in the figures, the performance parameters of the prior art samples are described in the following documents: adv, mate 2020, 32, e1906199, adv, energy mate 2020, 10, 2002084,ACS Energy Lett, 2020, 5, 3452, nat, nanotechnol 2018, 13, 456, nat, commun, 2020, 11, 103, joule 2020, 4, 1542, adv, mate 2020, 32, e2004985, nano Energy 2019, 63, 103876, adv, mate 2018, 30, e1707572, adv, mate 2017, 29, 1703627, nat, energy 2019, 4, 969.
Claims (8)
1. The preparation method of the PbS quantum dot ink is characterized by comprising the following steps of:
(1) Adding lead iodide, N, N-diphenyl thiourea and organic small molecules into a reaction container, adding N, N-dimethylformamide, wherein the ratio of the organic small molecules to the lead iodide is 300:1-30:1, and the ratio of the N, N-dimethylformamide to the lead iodide is 120:1-60:1, and the organic small molecules are one of mercaptopropionic acid, propanethiol, mercaptoethylamine, mercaptoethanol and ethanedithiol; stirring at room temperature to obtain clear transparent precursor solution;
(2) Injecting butylamine into the precursor solution, adding toluene after the reaction, centrifuging, discarding the supernatant, and vacuum-pumping to obtain PbS quantum dots;
(3) And (3) dissolving the PbS quantum dots in an N, N-dimethylformamide solvent according to the mass concentration of 500-1000 mg/mL to obtain the PbS quantum dot ink.
2. The method for preparing the PbS quantum dot ink according to claim 1, wherein the method comprises the following steps: the ratio of the organic small molecules to the lead iodide is one of 300:1, 120:1, 60:1 and 30:1.
3. The method for preparing the PbS quantum dot ink according to claim 1, wherein the method comprises the following steps: the reaction temperature of the step (2) is 0-10 ℃.
4. The method for preparing the PbS quantum dot ink according to claim 1, wherein the method comprises the following steps: the ratio of toluene to lead iodide is 60:1 to 30:1.
5. The method for preparing the PbS quantum dot ink according to claim 1, wherein the method comprises the following steps: the volume ratio of the butylamine to the N, N-dimethylformamide in the step (1) is 0.05:1-0.1:1.
6. A PbS quantum dot ink obtained by the preparation method of claim 1.
7. The application of the PbS quantum dot ink in a solar cell, as claimed in claim 6, wherein: and preparing the PbS quantum dot solar cell by taking the PbS quantum dot as an active layer.
8. The use of PbS quantum dot ink in solar cells according to claim 7, wherein: spin-coating PbS quantum dot ink on an ITO glass substrate with an electron transport layer, spin-coating an acid-coated PbS quantum dot layer to prepare a hole transport layer, and evaporating an anode to prepare the PbS quantum dot solar cell.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110040769A (en) * | 2019-05-16 | 2019-07-23 | 苏州大学 | Iodide ion ligand PbS nanocrystalline preparation method and the nanocrystalline ink of iodide ion ligand PbS, solar battery |
| CN111073648A (en) * | 2019-12-31 | 2020-04-28 | 苏州星烁纳米科技有限公司 | Quantum dot, quantum dot ink and display device |
| CN112117383A (en) * | 2020-09-11 | 2020-12-22 | 东北师范大学 | Structure-adjustable electron transport layer and preparation method thereof, and solar cell and preparation method thereof |
| WO2021002104A1 (en) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | Light detection element, method for manufacturing light detection element, image sensor, dispersion liquid, and semiconductor film |
| CN113122251A (en) * | 2021-04-12 | 2021-07-16 | 苏州大学 | Direct synthesis method for preparing size-adjustable lead sulfur group quantum dots and application thereof |
| CN113675343A (en) * | 2021-08-17 | 2021-11-19 | 华南农业大学 | Perovskite thin film adopting multifunctional group ligand quantum dots and preparation and application thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106083573B (en) * | 2016-07-01 | 2021-03-23 | 京东方科技集团股份有限公司 | Organic ligand, preparation method thereof, quantum dot layer and light-emitting diode |
-
2022
- 2022-11-21 CN CN202211460167.7A patent/CN115678346B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110040769A (en) * | 2019-05-16 | 2019-07-23 | 苏州大学 | Iodide ion ligand PbS nanocrystalline preparation method and the nanocrystalline ink of iodide ion ligand PbS, solar battery |
| WO2021002104A1 (en) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | Light detection element, method for manufacturing light detection element, image sensor, dispersion liquid, and semiconductor film |
| CN111073648A (en) * | 2019-12-31 | 2020-04-28 | 苏州星烁纳米科技有限公司 | Quantum dot, quantum dot ink and display device |
| CN112117383A (en) * | 2020-09-11 | 2020-12-22 | 东北师范大学 | Structure-adjustable electron transport layer and preparation method thereof, and solar cell and preparation method thereof |
| CN113122251A (en) * | 2021-04-12 | 2021-07-16 | 苏州大学 | Direct synthesis method for preparing size-adjustable lead sulfur group quantum dots and application thereof |
| CN113675343A (en) * | 2021-08-17 | 2021-11-19 | 华南农业大学 | Perovskite thin film adopting multifunctional group ligand quantum dots and preparation and application thereof |
Non-Patent Citations (2)
| Title |
|---|
| Small Angle Neutron Scattering Study of PbS Quantum Dots Synthetic Routes via Sol-Gel;Pineo,M,et al.;《JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY》;第26卷(第1-3期);第527-531页 * |
| 基于硫化铅量子点和氧化锌纳米颗粒异质结的高性能柔性和宽波段光电探测器（英文）;彭明发等;Science China Materials;第62卷(第2期);第225-235页 * |
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