CN115676873A - Defect-state tin oxide normal-temperature sensing material, preparation method and application - Google Patents
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Abstract
The invention belongs to the technical field of preparation of sensing materials and discloses defect-state SnO 2 A normal-temperature sensing material, a preparation method and application thereof are disclosed, wherein a compound solid containing a tin source is dripped into deionized water, and the solution A is obtained by fully stirring; adding an organic compound into the prepared solution A, and fully stirring to obtain a solution B; introducing the solution B into a reaction kettle for low-temperature hydrothermal reaction; washing, centrifuging and drying the obtained reactant to obtain a precursor, heating to a calcination temperature according to a set heating rate, continuously sintering, and naturally cooling to room temperature to obtain defect-state SnO 2 A nanoparticle sensing material. The invention synthesizes defect-state SnO 2 Nanoparticles, having a small size, formed by the reaction of SnO 2 The oxygen defect concentration of the nano particles is regulated and controlled, so that the surface of the material is improvedThe ionization activation capability of the gas molecules containing the nitrogen VOCs and the oxygen molecules realizes the high-selectivity sensing of the gas containing the nitrogen VOCs at room temperature.
Description
Technical Field
The invention belongs to the technical field of preparation of sensing materials, and particularly relates to defect-state tin oxide (SnO) 2 ) A normal temperature sensing material, a preparation method and application.
Background
At present, with the rapid development of science and technology, people bring convenience and rapidness and also bring environmental pollution and energy crisis, and the air for human survival is the first time. Therefore, there is a need for the detection and monitoring of air quality and the concentration of toxic, harmful, flammable and explosive gases in domestic and production locations. Although the causes of atmospheric pollution are varied, the random emission of Volatile Organic Compounds (VOCs) is inevitable.
Outdoor, human activities such as resource exploitation, industrial production, and transportation may emit large amounts of VOCs into the air. Furthermore, VOCs are derived from indoor coal, natural gas combustion, detergents, and indoor decorative materials such as adhesives and paints. Most VOCs, especially nitrogen-containing VOCs, can cause discomforts such as headache, vomit, hypodynamia and the like of human bodies, and the excessive concentration can cause poisoning, liver and lung dysfunction, immune system disorder and canceration to threaten life. Therefore, development and production of gas detection instruments and equipment with low cost, simple operation and high selectivity are the main research directions of researchers.
Metal Oxide Semiconductor (MOS) material has simple preparation process and strong sensing stabilityThe material is concerned by a large number of researchers at home and abroad and is considered as an ideal material for detecting low-concentration VOCs gas. However, due to the limitation of low reactivity of the molecules of the VOCs, it is difficult to perform high-sensitivity monitoring on VOCs gas by using the conventional MOS sensing material. To achieve highly selective detection of VOCs gases, researchers have used interfacial engineering, noble metal additions, and metal oxides (e.g., niO and Co) with catalytic activity of VOCs gases 3 O 4 ) MOS is modified to improve sensitivity and selectivity to BTX gas. However, the reported MOS-based sensing material can complete the reaction at a higher working temperature to 5-100mg/m due to higher activation energy of VOCs molecular chemical reaction 3 Detection of VOCs gas over a range of concentrations. In addition, the synthesis of para-olefins is 0-5mg/m, subject to the structural similarity of VOCs gases and the chemical stability of the benzene ring 3 Sensing materials with excellent response performance and high selectivity of low-concentration VOCs gases are still a great problem.
The gas sensing process is that when the sensor is exposed to target gas, the resistance of the sensing material gradually decreases or increases along with the change of the gas concentration, and the process is essentially gas-solid phase reaction carried out on the surface of the material. The electronic structure of the surface interface of the sensing material, the interaction of atoms/molecules and the surface interface and the electron transfer of the surface interface are the core for researching the chemical of the surface interface of the gas sensing material. In recent years, researchers have realized the regulation and control of the surface active sites and ionization activation capability of the gas sensing material by regulating and controlling the surface interface structure of the semiconductor type gas sensing material, including surface atom arrangement, electronic structure, defect types, specific surface area and the like. However, fine control of surface defects of semiconductor sensing materials is not yet realized, so that the problems of poor selectivity, high working temperature and the like of the sensing materials when monitoring VOCs gas cannot be effectively solved.
Through the above analysis, the problems and defects of the prior art are as follows: the prior art can not finely regulate and control the surface defects of the semiconductor sensing material, so that the problems of poor selectivity, high working temperature and the like of the sensing material when monitoring VOCs gas are caused.
Disclosure of Invention
Aiming at the prior artThe invention provides a defect state SnO 2 A normal temperature sensing material, a preparation method and application.
The invention aims to solve the problems of poor selectivity of most metal oxide semiconductor sensing materials to VOCs gas and high working temperature, and provides a preparation method which can control the type and content of surface defects to improve the selectivity of the metal oxide semiconductor sensing materials and reduce the sensing working temperature of the metal oxide semiconductor sensing materials, and has the advantages of simple and convenient synthesis operation and low energy consumption.
The invention adopts the following technical scheme:
adding a compound solid containing a tin source into deionized water, and fully stirring to obtain a solution A;
adding an organic compound into the prepared solution A, and fully stirring to obtain a solution B;
step three, introducing the solution B into a reaction kettle for low-temperature hydrothermal reaction;
step four, washing, centrifuging and drying the reactant obtained in the step three to obtain a precursor, heating to the calcining temperature according to a set heating rate, continuously sintering, and naturally cooling to room temperature to obtain defect-state SnO 2 A nanoparticle sensing material.
Further, the compound containing the tin source in the step one is SnCl 4 ·5H 2 O solid and SnCl 4 ·5H 2 Any one of the O solutions.
Further, the molar ratio of the amount of the compound containing a tin source in the first step and the organic compound in the second step may be 3.
Further, the stirring temperature in the first step and the second step is 0 ℃, 30 ℃, 60 ℃ or 80 ℃; the duration of the stirring process is 10min, 20min, 30min, 40min, 50min or 60min.
Further, the hydrothermal temperature in the third step is 60 ℃, 80 ℃ or 100 ℃; the hydrothermal time is 10h, 12h, 14h or 16h.
Further, the number of washing in the fourth step is 0, 1, 2, 3, 4 or 5; the number of centrifugation times was 0, 1, 2, 3, 4 or 5 times.
Further, the drying atmosphere in the fourth step is vacuum drying; the drying time is 10h, 12h, 14h, 16h, 18h or 20h; the drying temperature is 60 ℃, 70 ℃ or 80 ℃.
Further, the calcination temperature in the fourth step is 300 ℃, 350 ℃, 400 ℃, 450 ℃, 500 ℃, 550 ℃, 600 ℃ or 650 ℃; the heating rate is 1 ℃ min -1 、2℃·min -1 、3℃·min -1 、 4℃·min -1 、5℃·min -1 、6℃·min -1 、7℃·min -1 、8℃·min -1 、9℃·min -1 Or 10 ℃ min -1 (ii) a The continuous sintering calcination time is 100min, 200min or 300min.
Another object of the present invention is to provide a defect-state SnO 2 Normal temperature sensing material, said defect state SnO 2 Normal temperature sensing material utilizes the defect state SnO 2 The normal temperature sensing material is prepared by the preparation method.
The invention also aims to provide a VOCs gas monitoring sensor which adopts defect-state SnO 2 The normal temperature sensing material is prepared and is applied to sensing and monitoring various VOCs gases at room temperature.
By combining the technical scheme and the technical problem to be solved, the technical scheme to be protected by the invention has the advantages and positive effects that:
in order to solve the problems of poor sensing selectivity and high working temperature caused by difficult regulation and control of surface defects of semiconductor sensing materials, the invention provides defect-state SnO with the advantages of capability of stably generating surface defects, change of surface defect content, simple and convenient synthesis operation and mild reaction conditions 2 A method for preparing a nanoparticle sensing material. The invention synthesizes defect-state SnO 2 Nanoparticles of sensing material having a small size, formed by the interaction of SnO 2 The oxygen defect concentration of the nano particles is regulated, so that the ionization activation capability of the material surface on gas molecules and oxygen molecules of the nitrogen-containing VOCs is improved, and the high-selectivity sensing of the nitrogen-containing VOCs gas at room temperature is realized.
The invention provides a preparation method of a material capable of controlling the types and the contents of surface defects, which improves the ionization activation capability of the surface of the material on gas molecules and oxygen molecules of nitrogen-containing VOCs and realizes the high-specificity selective sensing of the nitrogen-containing VOCs at room temperature. Has the guiding significance of the preparation method.
The technical scheme of the invention solves the technical problem that people are eagerly to solve but can not be successfully solved all the time: the invention provides a material preparation method for controlling the type and content of surface defects by controlling the stirring temperature and the calcining atmosphere, the material can be synthesized at low temperature to promote the generation of surface oxygen vacancies, and the calcination under the air atmosphere can inhibit the generation of metal defects, thereby improving the ionization activation capability of the material surface on gas molecules and oxygen molecules of nitrogen-containing VOCs and realizing the high-specificity selective sensing of the nitrogen-containing VOCs gas at room temperature. Has the guiding significance of the preparation method.
Drawings
FIG. 1 is a defect state SnO provided by the embodiment of the invention 2 A flow chart of a preparation method of the normal-temperature sensing material;
FIG. 2 is a defect state SnO synthesized by a and b with different stirring temperatures provided by the embodiment of the invention 2 XRD pattern of nanoparticle sensing material (XRD is an abbreviation for X-ray diffraction, i.e. X-ray diffraction);
FIG. 3 shows defect-state SnO synthesized by a and b with different stirring temperatures provided by the embodiment of the invention 2 A Raman map of the nanoparticle sensing material; c is defect state SnO synthesized by different stirring temperatures 2 EPR map of nanoparticle sensing material (EPR is abbreviation of Electron paramagnetic resonance spectrum);
FIG. 4 shows defect-state SnO synthesized by a-d provided by the embodiment of the invention at different stirring temperatures (0, 30, 60 and 80℃) 2 HRTEM (HRTEM is an abbreviation for high resolution transmission electron microscope) of nanoparticle sensing material;
FIG. 5 shows defect-state SnO synthesized at different stirring temperatures according to embodiments of the present invention 2 And (3) a sensing performance test flow chart of the nano-particle material.
FIG. 6 shows defect-state SnO synthesized by a-d provided by the embodiment of the invention at different stirring temperatures (0, 30, 60 and 80℃) 2 A sensor selectivity profile of the nanoparticle material;
FIG. 7 is a defect state SnO synthesized by stirring at 30 ℃ with a-g provided by the embodiment of the invention 2 Respectively carrying out a sensing response recovery curve diagram on the nano-particle sensing material to diethylamine, triethylamine, ethylenediamine, ammonia gas, formamide, methylformamide and dimethylformamide;
FIG. 8 shows defect-state SnO synthesized by stirring at 30 ℃ by a-g provided by the embodiment of the invention 2 The sensing response values of the nano-particle sensing material to diethylamine, triethylamine, ethylenediamine, ammonia gas, formamide, methylformamide and dimethylformamide respectively change with different working temperatures; h is defect-state SnO synthesized by stirring at 30 DEG C 2 And (3) a reference resistance value graph of the nanoparticle sensing material at different working temperatures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
This section is an explanatory embodiment expanding on the claims so as to fully understand how the present invention is embodied by those skilled in the art.
As shown in FIG. 1, the defect state SnO provided by the embodiment of the invention 2 The preparation method of the normal temperature sensing material comprises the following steps:
s101, dropwise adding a compound solid containing a tin source into deionized water, and fully stirring to obtain a solution A;
s102, adding an organic compound into the prepared solution A, and fully stirring to obtain a solution B;
s103, introducing the solution B into a reaction kettle for low-temperature hydrothermal reaction;
s104, washing, centrifuging and drying the reactant obtained in the step S103 to obtain a precursor, and heating to a calcining temperature according to a set heating rateSintering continuously, and finally naturally cooling to room temperature to obtain defect-state SnO 2 A nanoparticle sensing material.
In the embodiment of the present invention, the compound containing the tin source in step S101 is selected from SnCl 4 ·5H 2 Any one of O solid and solution, preferably SnCl 4 ·5H 2 And (4) O solid.
The molar ratio of the tin source-containing compound in step S101 and the organic compound in step (2) in the present example may be 3.
The stirring temperature in step S101 and step S102 in the embodiment of the present invention may be one selected from 0, 30, 60, and 80 ℃, and is preferably 30 ℃.
The duration of the stirring process in step S101 and step S102 in the embodiment of the present invention may be selected from one of 10, 20, 30, 40, 50, and 60min, preferably 10 ℃.
The hydrothermal temperature in step S103 in the embodiment of the present invention may be one selected from 60, 80, and 100 ℃, and is preferably 80 ℃.
The hydrothermal time in step S103 in the embodiment of the present invention may be one selected from 10, 12, 14, and 16h, and is preferably 12 hours.
The number of washing in step S104 in the embodiment of the present invention may be one selected from 0, 1, 2, 3, 4, and 5, and preferably 0.
The number of times of centrifugation in step S104 in the embodiment of the present invention may be one selected from 0, 1, 2, 3, 4, and 5 times, and preferably 1 time.
In the embodiment of the present invention, the drying atmosphere in step S104 is vacuum drying.
The drying time in step S104 in the embodiment of the present invention may be one selected from 10, 12, 14, 16, 18, and 20h, preferably 20h
The drying temperature in step S104 in the embodiment of the present invention may be one selected from 60, 70, and 80 ℃, and is preferably 60 ℃.
The calcination temperature in step S104 in the embodiment of the present invention may be one selected from 300, 350, 400, 450, 500, 550, 600, 650 ℃, and preferably 500 ℃.
In the embodiment of the present invention, the temperature increase rate in step S104 may be selected from 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 ℃. Min -1 One, preferably 5 ℃ min -1 。
The calcination time in step S104 in the embodiment of the present invention may be one selected from 100, 200, and 300min, and is preferably 200min.
Defect state SnO in examples of the invention 2 The method for regulating and controlling the surface defects of the normal-temperature sensing material comprises the following steps:
1) Three different temperatures of 0, 30, 60 and 80 ℃ are used for stirring.
2) Calcining under three atmospheres of zero-order air, hydrogen and argon.
In order to prove the creativity and the technical value of the technical scheme of the invention, the part is the application example of the technical scheme of the claims on specific products or related technologies.
The invention provides a defect state SnO 2 The application of the nano-particle sensing material is applied to sensing and monitoring various VOCs gases at room temperature.
The method comprises the following specific steps:
1. SnO (stannic oxide) 2 Preparation method of nano-particle surface defect types and content
2. Using defect state SnO 2 Technology for manufacturing sensing electrode by nano particle material
3. Defect state SnO 2 Sensing performance test of nano-particle material on VOCs gas
3. Evidence of the relevant effects of the examples. The embodiment of the invention has some positive effects in the process of research and development or use, and indeed has great advantages compared with the prior art, and the following contents are described by combining data, graphs and the like in the experimental process.
Example 1
Defect-state SnO 2 A method of preparing nanoparticles, comprising the steps of:
2.62g of SnCl are taken 4 ·5H 2 O (7.5 mmol) and 35mL of deionized water were mixed and dispensed in a 50mL beaker,and stirred at 30 ℃ for 30min. 0.15g of urea (2.5 mmol) was added to SnCl 4 The solution was stirred at 30 ℃ for 10min. Under vigorous stirring, the solution became clear and transparent. Quickly transferring the solution to a 100mL pressure-resistant polytetrafluoroethylene reaction kettle, further placing the reaction kettle in an oven, setting the reaction temperature to 80 ℃ for 12 hours, naturally cooling the reaction kettle to be lower than room temperature after the reaction is finished, obtaining a precursor by washing the reaction kettle for 0 time, centrifuging the reaction kettle for 1 time and drying the reaction kettle for 20 hours at 60 ℃ in vacuum, placing the ceramic boat containing the precursor in a tube furnace, and heating the ceramic boat to 5 ℃ for min -1 Heating to 500 ℃ at a heating rate, calcining for 200min in a zero-order air atmosphere, and finally obtaining defect-state SnO 2 And (3) nanoparticles.
As can be seen from FIG. 2, the XRD pattern proves that the prepared material is cubic rutile SnO 2 Meanwhile, the SnO synthesized by the method can be observed through an XRD pattern 2 Has stronger diffraction peak of high index crystal face.
As can be seen from FIG. 3, both the Raman spectrum and the EPR spectrum simultaneously prove that the SnO synthesized by the method of the invention 2 Has obvious oxygen vacancy signal, and realizes the regulation and control of the oxygen vacancy content by changing the stirring temperature.
As can be seen from FIG. 4, HRTEM images show that SnO synthesized by the method of the present invention 2 The microstructure of (a) appears as nanoparticles of around 10nm in diameter.
Example 2
Using defect state SnO 2 Sensing electrode made of nano-particle material and sensing test
The sensing electrode is manufactured as follows: respectively weighing 15.0mg of SnO prepared at different stirring temperatures (0, 30, 60 and 80 ℃) by using an analytical balance 2 Placing the powder in an agate mortar, sequentially adding 0.285g of glycerol (adhesive), 135 mu L of glycol (dispersant) and 50 mu L of deionized water (dispersant), grinding until the powder sample is completely dispersed to form slurry with uniform texture, and then measuring 15 mu L of slurry by using a liquid transfer gun to drip and coat the surface of the 8X 8 gold finger-inserted electrode. Then placing gold finger electrode on a heating table, gradually heating to 120 deg.C at 0-40 deg.C, 40-80 deg.C and 80-120 deg.C, baking for 6 hr, drying the slurry completely to form a film, and loading with sensing elementThe electrode plate of the material film is put into a porcelain boat and is placed in a tube furnace at 5 ℃ for min -1 Heating to 500 ℃ at a heating rate, calcining for 200min in a zero-level air atmosphere, and finally obtaining defect-state SnO 2 And the electrode plate is made of nano-particle materials. The electrode sheet loaded with the sensing material film was placed in a gas test system (fig. 5), and aged at room temperature for 24 hours under an applied voltage of 1.0V.
Example 3
SnO prepared at different stirring temperatures (0, 30, 60 and 80℃) 2 Selective testing of sensing material on VOCs gas
SnO prepared at different stirring temperatures (0, 30, 60, 80 ℃) were tested under conditions of room temperature (29.3 ℃) and relative humidity (38% RH) 2 The response value of the sensing material to 12 kinds of VOCs gases (100 ppm of diethylamine, triethylamine, ethylenediamine, ammonia gas, formamide, methyl formamide, dimethyl formamide, ethanol, acetone, formaldehyde, benzene and toluene) is high or low. SnO synthesized at four stirring temperatures as shown by a-d in FIG. 6 2 The sensing materials all show higher response to diethylamine, triethylamine and ethylenediamine and no response to 5 gases of ethanol, acetone, formaldehyde, benzene and toluene. At the same time. 0. SnO synthesized by stirring at 30 DEG C 2 The sensing material shows high response to ammonia gas, formamide and methyl formamide, wherein SnO synthesized by stirring at 30 DEG C 2 The sensing material has a higher response to the above-mentioned 7 nitrogen-containing VOCs gases. Compared with other SnO synthesized at two stirring temperatures (60 and 80℃) 2 SnO synthesized at 0, 30 ℃ stirring temperature 2 The sensing material has excellent selectivity to the nitrogen-containing VOCs gas due to the electron aggregation of surface oxygen vacancies to grab lone pair electrons on the nitrogen atom, so that the sensing material has high selectivity to the nitrogen-containing VOCs gas, and the high response value is due to the size effect brought by the small nano structure of the sensing material.
Example 4
SnO synthesized by stirring at 30 DEG C 2 Response recovery test of sensing material to 7 nitrogen-containing VOCs gases
As shown in a-g in FIG. 7, snO synthesized by stirring at 30 ℃ according to the present invention 2 The sensing material only has the reaction of diethylamine, ammonia gas and methane at room temperatureThe five gases of amide, methyl formamide and dimethyl formamide have good response recovery characteristics at room temperature, have extremely high response speed to triethylamine and ethylenediamine but have long recovery time, and because surface oxygen vacancies have strong adsorption effect on triethylamine and diethylamine, desorption is difficult, so recovery is slow.
Example 5
SnO synthesized by stirring at 30 DEG C 2 Response change test of sensing material to 7 nitrogen-containing VOCs gases at different working temperatures
Conditions As shown in a-g in FIG. 8, snO synthesized by stirring at 30 ℃ according to the present invention 2 The sensing material has high response to diethylamine, triethylamine, ethylenediamine, ammonia gas, formamide, methyl formamide and dimethyl formamide, and has almost no response to the 7 nitrogen-containing VOCs gases at the working temperatures of 50, 100 and 150 ℃. SnO synthesized by stirring at 30 ℃ according to the invention at working temperature as shown in FIG. 8h 2 The sensing material has great influence and the reference resistance is reduced along with the increase of the working temperature, because the sensing material is in a high-temperature environment, the surface is reconstructed at a higher temperature, the original oxygen vacancy disappears, the surface of the material loses the electron enrichment function, and the material loses the high selectivity to the nitrogen-containing VOCs gas.
The invention regulates and controls SnO 2 The surface oxygen vacancy of the nano structure realizes the regulation and control of the electron enrichment phenomenon on the surface of the material, and effectively promotes the adsorption ionization activation of the gas containing the nitrogen-containing VOCs, thereby improving the sensing selectivity and the response value of the gas containing the nitrogen-containing VOCs. The experimental method is formed by one-step reaction, and has the advantages of simple synthesis and mild reaction conditions. The invention enables defect state SnO 2 The nano-particle material has wide application prospect and theoretical significance in methodology research.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any modification, equivalent replacement, and improvement made by those skilled in the art within the technical scope of the present invention disclosed in the present invention should be covered within the scope of the present invention.
Claims (10)
1. Defect-state SnO 2 The preparation method of the normal-temperature sensing material is characterized in that the defect state SnO 2 The preparation method of the normal temperature sensing material comprises the following steps:
step one, dropwise adding a compound solid containing a tin source into deionized water, and fully stirring to obtain a solution A;
adding an organic compound into the prepared solution A, and fully stirring to obtain a solution B;
step three, introducing the solution B into a reaction kettle for low-temperature hydrothermal reaction;
step four, washing, centrifuging and drying the reactant obtained in the step three to obtain a precursor, heating to the calcining temperature according to a set heating rate, continuously sintering, and finally naturally cooling to room temperature to obtain defect-state SnO 2 A nanoparticle sensing material.
2. The defect state SnO of claim 1 2 The preparation method of the normal-temperature sensing material is characterized in that the compound containing the tin source in the step one is SnCl 4 ·5H 2 O solid and SnCl 4 ·5H 2 Any one of the O solutions.
3. The defect state SnO of claim 1 2 The preparation method of the normal-temperature sensing material is characterized in that the molar ratio of the compound containing the tin source in the step one to the organic compound in the step two can be 3.
4. The defect state SnO of claim 1 2 The preparation method of the normal temperature sensing material is characterized in that the stirring temperature in the first step and the second step is 0 ℃, 30 ℃, 60 ℃ or 80 ℃; the duration of the stirring process is 10min, 20min, 30min, 40min, 50min or 60min.
5. The defect state SnO of claim 1 2 A method for preparing a normal-temperature sensing material,characterized in that the hydrothermal temperature in the third step is 60 ℃, 80 ℃ or 100 ℃; the hydrothermal time is 10h, 12h, 14h or 16h.
6. The defect state SnO of claim 1 2 The preparation method of the normal temperature sensing material is characterized in that the washing times in the fourth step are 0 time, 1 time, 2 times, 3 times, 4 times or 5 times; the number of centrifugation times was 0, 1, 2, 3, 4 or 5 times.
7. The defect state SnO of claim 1 2 The preparation method of the normal temperature sensing material is characterized in that the drying atmosphere in the fourth step is vacuum drying; the drying time is 10h, 12h, 14h, 16h, 18h or 20h; the drying temperature is 60 ℃, 70 ℃ or 80 ℃.
8. The defect state SnO of claim 1 2 The preparation method of the normal temperature sensing material is characterized in that the calcining temperature in the fourth step is 300 ℃, 350 ℃, 400 ℃, 450 ℃, 500 ℃, 550 ℃, 600 ℃ or 650 ℃; the heating rate is 1 ℃ min -1 、2℃·min -1 、3℃·min -1 、4℃·min -1 、5℃·min -1 、6℃·min -1 、7℃·min -1 、8℃·min -1 、9℃·min -1 Or 10 ℃ min -1 (ii) a The calcination time for continuous sintering is 100min, 200min or 300min.
9. Defect-state SnO 2 The normal temperature sensing material is characterized in that the defect state SnO 2 Normal temperature sensing material using the defect state SnO as claimed in any one of claims 1-8 2 The normal temperature sensing material is prepared by the preparation method.
10. A VOCs gas monitoring sensor, characterized in that the VOCs gas monitoring sensor adopts the defect state SnO of claim 9 2 The normal temperature sensing material is applied to sensing and monitoring various VOCs gases at room temperature.
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