CN115666152A - Anode structure, preparation method thereof and display device - Google Patents

Abstract

The invention relates to an anode structure, a preparation method thereof and a display device. The anode structure includes: a first conductive medium layer; the anode reflecting layer is arranged on the first conductive medium layer, and the surface of the anode reflecting layer, which is far away from the first conductive medium layer, is provided with a plurality of surface areas with different roughness and/or an uneven surface structure; and the second conductive medium layer is arranged on the surface of the anode reflecting layer far away from the first conductive medium layer. The anode structure can widen the light-emitting direction of reflected light, weaken the microcavity effect of a top-emission display device, improve the viewing angle and improve the light extraction efficiency; the preparation method of the anode structure is simple and easy to implement; the display device has high light extraction efficiency and wide viewing angle.

Description

Anode structure, preparation method thereof and display device

Technical Field

The invention relates to the technical field of display, in particular to an anode structure, a preparation method thereof and a display device.

Background

An organic Light-Emitting Diode (OLED), i.e., an organic Light-Emitting Diode, has the advantages of self-luminescence, wide viewing angle, high contrast, low energy consumption, flexibility, and the like, and is widely applied in the fields of mobile phones, flat panels, television displays, and the like. The organic light emitting diode can be roughly classified into a bottom emission type and a top emission type according to a light emitting manner, and the most commonly used organic light emitting diode at present adopts a top emission light emitting manner because the top emission has less penetrating film layer and the light extraction efficiency is higher.

The anode of the top emission type OLED generally adopts a laminated structure including an anode reflective layer having a function of reflecting light and a conductive medium layer in direct contact with an organic material and a substrate material. The anode reflective layer is generally made of metal. In practical applications, it is found that the light extraction efficiency of the current top-emitting OLED device is still low, and further improvement is needed.

Disclosure of Invention

In view of the above, it is necessary to provide an anode structure, a method for manufacturing the same, and a display device, in order to solve the problem of low light extraction efficiency of the conventional top emission type display device.

The technical scheme for solving the technical problems is as follows:

in one aspect, the present invention provides an anode structure comprising:

a first conductive medium layer;

the anode reflecting layer is arranged on the first conductive medium layer, and the surface of the anode reflecting layer, which is far away from the first conductive medium layer, is provided with a plurality of surface regions with different roughness and/or an uneven surface structure; and

and the second conductive medium layer is arranged on the surface of the anode reflecting layer far away from the first conductive medium layer.

In one embodiment, the anode reflective layer comprises:

a first sub-reflective layer;

the second sub-reflecting layer and the first sub-reflecting layer are arranged at the same layer;

the material of the first sub-reflecting layer is different from that of the second sub-reflecting layer, so that a plurality of surface regions with different roughness are formed on the surface, away from the first conducting medium layer, of the anode reflecting layer;

and/or the thicknesses of the first sub-reflecting layer and the second sub-reflecting layer are different, so that the surface of the anode reflecting layer far away from the first conductive medium layer forms the rugged surface structure.

In one embodiment, the number of the first sub-reflecting layers is multiple, and the multiple first sub-reflecting layers are independently arranged on the first conductive medium layer at intervals; the second sub-reflecting layer is arranged on the first conductive medium layer, and the second sub-reflecting layer is arranged at the gap between the first sub-reflecting layers so as to connect the first sub-reflecting layers with each other.

In one embodiment, a plurality of the first sub-reflective layers are distributed in an array.

In one embodiment, the materials of the first sub-reflective layers are not all the same, and/or the heights of the first sub-reflective layers are not all the same.

In one embodiment, the first sub-reflective layer and the second sub-reflective layer are pure metal layers formed of one of silver, aluminum, copper, iron, gold, and palladium, or alloy layers formed of at least two of them.

In one embodiment, the surfaces of the first sub-reflecting layer and/or the second sub-reflecting layer far away from the first conductive medium layer are both planar.

In one embodiment, the thickness of each of the first sub-reflective layer and the second sub-reflective layer ranges from 140nm to 200nm; the thickness of the second sub-reflecting layer is larger than that of the first sub-reflecting layer, and the thickness difference between the second sub-reflecting layer and the first sub-reflecting layer is 2 nm-3 nm.

In one embodiment, the first conductive medium layer and the second conductive medium layer are made of one material independently selected from IZO, ITO, AZO, ATO and FTO.

In one embodiment, the thickness of the first conductive medium layer ranges from 10nm to 20nm; the thickness range of the second conductive medium layer is 50 nm-100 nm.

The invention provides a display device, which comprises a substrate, and an anode structure, a light-emitting layer and a cathode which are sequentially stacked on the substrate, wherein the anode structure is the anode structure, and the surface of a first conductive medium layer of the anode structure, which is far away from an anode reflecting layer, is arranged on the substrate.

The invention also provides a preparation method of the anode structure, which comprises the following steps:

forming the first conductive medium layer;

forming the anode reflecting layer on the first conductive medium layer, and enabling the anode reflecting layer to be far away from the surface of the first conductive medium layer to form a plurality of surface areas with different roughness and/or form a surface structure with unevenness;

and forming the second conductive medium layer on one surface of the anode reflecting layer, which is far away from the first conductive medium layer.

In one embodiment, the step of forming an anode reflective layer on the first conductive medium layer comprises:

evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate, by adopting a first mask with an opening pattern to form a plurality of independently spaced first sub-reflecting layers; then evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate, by adopting a second mask opposite to the opening pattern of the first mask to form a second sub-reflecting layer; or

Evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate base plate, by using the second mask plate to form the second sub-reflecting layer; then, evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate, by using the first mask plate to form a plurality of independent and spaced first sub-reflecting layers;

the first sub-reflecting layer and the second sub-reflecting layer are made of different materials and/or have different thicknesses.

According to the anode structure, the surface of the anode reflecting layer far away from the first conductive medium layer is provided with a plurality of surface areas with different roughness and/or is provided with an uneven surface structure; when the anode structure is used in a top-emission type display device, the anode reflecting layer can reflect light emitted by the light emitting layer and broaden the light emitting direction of reflected light due to the roughness difference of the surface of the anode reflecting layer and the small height difference of the uneven surface structure in the anode structure, so that the microcavity effect of the top-emission type display device is weakened, the viewing angle is effectively improved, and the light extraction efficiency is improved.

The display device comprises the substrate base plate, and the anode structure, the light-emitting layer and the cathode which are sequentially stacked on the substrate base plate, so that the problems of low light extraction efficiency and microcavity effect of the traditional top-emission type display device are well solved, and the light extraction efficiency is improved.

The preparation method of the anode structure adopts a plurality of evaporation methods to obtain the anode reflecting layer with various surface regions with different roughness and uneven surface structures, and the process is simple and easy to implement.

Drawings

FIG. 1 is a schematic structural diagram of an anode structure according to an embodiment of the present invention;

FIG. 2 is a schematic top view of an array of anode reflective layers in an anode structure according to an embodiment of the present invention;

fig. 3 is a schematic flow chart of a method for manufacturing an anode structure according to an embodiment of the present invention.

Description of reference numerals:

101. a base substrate; 102. a first conductive medium layer; 103. an anode reflective layer; 103a, a first sub-reflecting layer; 103b, a second sub-reflecting layer; 104. a second conductive dielectric layer.

Detailed Description

The present invention will be described in detail with reference to the following embodiments in order to make the above objects, features and advantages of the present invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

As described in the background of the invention, the current top emission type display device (e.g., OLED display device) has a problem of low light extraction efficiency. In view of the above, the inventors of the present invention have found, through intensive studies on the structure of a conventional top emission type display device, that the main cause of the above problems is: the existing anode reflecting layer material generally adopts a single material, a metal material with a flat surface and fixed roughness, the direction of reflected light is single due to the anode reflecting layer, the light is reflected when encountering a semitransparent cathode layer with a fixed refractive index and a light taking-out layer, the light is limited in an organic material, a microcavity effect is generated, the visual angle is small, the light taking-out efficiency is greatly reduced, and a large amount of light cannot be utilized in the light-emitting layer material.

In order to solve the above problems, an embodiment of the present invention provides an anode structure, which is schematically shown in fig. 1.

Referring to fig. 1, the anode structure includes a first conductive dielectric layer 102, an anode reflective layer 103, and a second conductive dielectric layer 104.

The anode reflecting layer 103 is arranged on the first conductive medium layer 102, and the surface of the anode reflecting layer 103 far away from the first conductive medium layer 102 is provided with a plurality of surface regions with different roughness; a second conductive dielectric layer 104 is disposed on the surface of the anode reflective layer 103 remote from the first conductive dielectric layer 102. The top view of the anode reflective layer 103 is shown in FIG. 2.

In the anode structure, a plurality of surface regions with different roughness are formed on the surface of the anode reflecting layer 103 far away from the first conductive medium layer 102; compared with the traditional anode structure of the anode reflecting layer with fixed surface roughness, the roughness difference of the surface of the anode reflecting layer 103 in the embodiment can avoid the condition that the light reflecting direction of the top emission display device from the light emitting layer to the anode reflecting layer 103 is single, can widen the light emitting direction of the reflected light, and weaken the microcavity effect of the structure of the top emission display device, thereby effectively improving the viewing angle and improving the light extraction efficiency.

In some of the embodiments, the anode reflective layer 103 includes a first sub reflective layer 103a and a second sub reflective layer 103b. The second sub-reflective layer 103b is disposed on the same layer as the first sub-reflective layer 103 a.

Further, in some embodiments, the material of the second sub-reflective layer 103b is different from the material of the first sub-reflective layer 103a, so that the surface of the anode reflective layer 103 away from the first conductive medium layer 102 forms a plurality of surface regions with different roughness.

It can be understood that, because the first sub-reflective layer 103a and the second sub-reflective layer 103b are made of different materials, the first sub-reflective layer 103a is disposed to form a surface region with a roughness on a side of the anode reflective layer 103 away from the first conductive medium layer 102; the second sub-reflecting layer 103b arranged on the same layer forms a surface area with another roughness on one surface of the anode reflecting layer 103 far away from the first conductive medium layer 102; so that the surface of the anode reflective layer 103 has a plurality of surface regions having different roughness.

In some embodiments, the first sub-reflective layers 103a are multiple, and the multiple first sub-reflective layers 103a are independently and separately disposed on the first conductive medium layer 102; the second sub-reflective layers 103b are disposed at the gaps between the first sub-reflective layers 103a to connect the first sub-reflective layers 103a to each other, together constituting the anode reflective layer 103.

In the anode reflective layer 103, the plurality of first sub reflective layers 103a are arranged in an array, for example, may be arranged in a matrix array. The heights of the first sub-reflective layers 103a may be the same, different, or partially the same. When the first sub-reflective layers 103a are formed by vapor deposition, the heights of the first sub-reflective layers 103a formed of the same material are the same. Preferably, the heights of the first sub-reflective layers 103a are not all the same.

Further, the first sub-reflective layer 103a may have a regular shape or an irregular shape such as a rectangle, a triangle, or a circle. Further, the shapes of the first sub-reflective layers 103a may be the same or different.

In some embodiments, the first sub-reflective layer 103a may be made of a metal material such as silver, aluminum, copper, iron, gold, palladium, and the like, for example, aluminum may be used as the metal material for forming the first sub-reflective layer 103a, so as to form an aluminum array. Similarly, the second sub-reflective layer 103b may be made of a metal material such as silver, aluminum, copper, iron, gold, or palladium, and for example, silver may be used as the metal material for forming the second sub-reflective layer 103b to form a silver array. However, the materials of the first sub-reflective layer 103a and the second sub-reflective layer 103b should not be the same, so as to form a plurality of surface regions with different roughness on the surface of the anode reflective layer 103.

It is understood that, if the roughness is not limited, for example, in the technical solution mentioned below in which the surface of the anode reflective layer 103 away from the first conductive medium layer 102 has an uneven surface structure, the materials of the first sub reflective layer 103a and the second sub reflective layer 103b may be the same or different.

The first sub reflective layer 103a and the second sub reflective layer 103b may be a pure metal layer formed of one of silver, aluminum, copper, iron, gold, and palladium, or an alloy layer formed of at least two of the above metals. The materials of the first sub-reflective layers 103a may be the same or different, or may be partially the same.

In the present invention, the arrangement of the first sub-reflective layer 103a and the second sub-reflective layer 103b is not limited to the array matrix pattern form, and other pattern forms may be adopted; similarly, the types of materials in the anode reflective layer 103 are not limited to two, and three or more different materials may be used to match, so that a third sub-reflective layer, a fourth sub-reflective layer, and the like may be formed in the anode reflective layer 103; even if the first sub-reflection layer 103a and the second sub-reflection layer 103b arranged in an array matrix are not used, it is only necessary to form a plurality of surface regions having different roughness on the surface of the anode reflection layer 103 away from the first conductive medium layer 102.

In another embodiment of the present invention, another anode structure is provided. The anode structure also includes a first conductive dielectric layer 102, an anode reflective layer 103, and a second conductive dielectric layer 104. The anode reflecting layer 103 is arranged on the first conductive medium layer 102, and the surface of the anode reflecting layer 103 far away from the first conductive medium layer 102 has an uneven surface structure; a second conductive dielectric layer 104 is disposed on the surface of the anode reflective layer 103 remote from the first conductive dielectric layer 102.

In the anode structure, an uneven surface structure is formed on one surface of the anode reflecting layer 103 far away from the first conductive medium layer 102; compared with the conventional anode structure of the anode reflecting layer with flat surface and fixed roughness, the uneven surface structure of the surface of the anode reflecting layer 103 of the embodiment can form a tiny height difference, so that the reflection directions of the emitted light generated after the top emission type display device is incident on the anode reflecting layer 103 from the light emitting layer have diversity, the condition that the reflection direction of the emitted light generated after the top emission type display device is incident on the anode reflecting layer 103 from the light emitting layer is single is avoided, the light emitting direction of the reflected light can be widened, the microcavity effect of the structure of the top emission type display device is weakened, the viewing angle is effectively improved, and the light extraction efficiency is improved.

Specifically, in some of the embodiments, the anode reflective layer 103 includes a first sub reflective layer 103a and a second sub reflective layer 103b. The bottom surfaces of the first sub-reflecting layer 103a and the second sub-reflecting layer 103b are both positioned on the first conductive medium layer 102, and the bottom surfaces are flush; the thicknesses of the first sub-reflecting layer 103a and the second sub-reflecting layer 103b are different, so that an uneven surface structure is formed on the surface of the anode reflecting layer 103 far away from the first conductive medium layer 102.

It can be understood that, since the bottom surfaces of the first sub-reflective layer 103a and the second sub-reflective layer 103b are flush but have different thicknesses, the heights of the first sub-reflective layer 103a and the second sub-reflective layer 103b from the surface of the first conductive medium layer 102 are different. Thus, an uneven surface structure is formed on the side of the anode reflective layer 103 remote from the first conductive medium layer 102.

Further, the surfaces of the first sub-reflective layer 103a and/or the second sub-reflective layer 103b far from the first conductive medium layer 102 are both planar. In other words, there is a height difference between the plane of the surface of the first sub-reflective layer 103a away from the first conductive medium layer 102 and the plane of the surface of the second sub-reflective layer 103b away from the first conductive medium layer 102.

In some embodiments, the thicknesses of the first sub-reflective layer 103a and the second sub-reflective layer 103b are in a range of 140nm to 200nm; the thickness of the second sub-reflecting layer is larger than that of the first sub-reflecting layer, and the thickness difference between the second sub-reflecting layer and the first sub-reflecting layer is 2 nm-3 nm. With this arrangement, two different heights of surfaces can be formed on the surface of the anode reflective layer 103 away from the first conductive medium layer 102, so as to form an uneven surface structure, and the different heights of the surfaces have a slight height difference.

The thicknesses of the first sub-reflective layer 103a and the second sub-reflective layer 103b and the height difference between the first sub-reflective layer 103a and the second sub-reflective layer 103b may be adjusted within the above ranges according to actual needs.

In another preferred embodiment of the present invention, the materials of the plurality of first sub-reflective layers 103a are not all the same, and/or the heights of the plurality of first sub-reflective layers 103a are not all the same, so that the surface of the anode reflective layer 103 has more surfaces with different height differences; the shape of the uneven surface structure is not limited to the array matrix pattern described above, and other shape patterns may be employed.

In another preferred embodiment of the present invention, the materials of the first sub-reflective layer 103a and the second sub-reflective layer 103b in the anode reflective layer 103 are different, so that a plurality of surface regions with different roughness are formed on the surface of the anode reflective layer 103 away from the first conductive medium layer 102; meanwhile, the thicknesses of the first sub-reflective layer 103a and the second sub-reflective layer 103b are also different, so that an uneven surface structure is formed on the surface of the anode reflective layer 103 away from the first conductive medium layer 102.

That is, the surface of the anode reflective layer 103 away from the first conductive medium layer 102 in this embodiment simultaneously has a plurality of surface regions with different roughness and an uneven surface structure. Therefore, the light-emitting direction of reflected light can be widened by simultaneously utilizing the surface areas with different roughness and the rugged surface structure, and the microcavity effect of the top-emission-type device structure is weakened.

In one embodiment, the first conductive dielectric layer 102 is selected from one of IZO, ITO, AZO, ATO, and FTO; the thickness of the first conductive medium layer 102 ranges from 10nm to 20nm. Further, in the present embodiment, ITO is used as the first conductive medium layer 102, and the thickness of the first conductive medium layer is 15nm. The second conductive dielectric layer 104 is one selected from IZO, ITO, AZO, ATO, and FTO; the thickness range of the second conductive medium layer 104 is 50 nm-100 nm; further, in the present embodiment, ITO is used as the second conductive medium layer 104, and the thickness thereof is 75nm.

Further, both surfaces of the anode reflective layer 103 are connected with the second conductive medium layer 104 and the first conductive medium layer 102, respectively. One of the second conductive medium layer 104 and the first conductive medium layer 102 is for contact with the substrate base plate 101 of the display device, and the other is for contact with the light emitting layer.

In a specific example, the first conductive medium layer 102 is used to contact the substrate base plate 101 of the display device; in other words, the first conductive medium layer 102 is disposed on the substrate base plate 101 on the side away from the anode reflection layer 103. Accordingly, the second conductive medium layer 104 is used to contact a light emitting layer in the display device.

Further, the thickness of the first conductive medium layer 102 is thinner than the second conductive medium layer 104.

Referring to fig. 3, in another embodiment of the present invention, there is also provided a method for manufacturing the above-described anode structure, including the following steps S10 to S30:

step S10: forming a first conductive dielectric layer 102;

step S20: forming an anode reflecting layer 103 on the first conductive medium layer 102, and forming a plurality of surface regions with different roughness and/or forming a surface structure with unevenness on the surface of the anode reflecting layer 103 far away from the first conductive medium layer 102;

step S30: a second conductive medium layer 104 is formed on the surface of the anode reflection layer 103 away from the first conductive medium layer 102.

By adopting the preparation method, a plurality of surface areas with different roughness and/or an uneven surface structure are formed on the surface of the anode reflection layer 103 far away from the first conductive medium layer 102, and the prepared anode structure can avoid the condition that the light reflection direction of the top emission type display device from the light emitting layer to the anode reflection layer 103 is single, the light emitting direction of the reflected light can be widened, the microcavity effect of the structure of the top emission type display device is weakened, the viewing angle is improved, and the light extraction efficiency is improved.

Specifically, in some embodiments, a plurality of surface regions with different roughness are formed on the surface of the anode reflective layer 103 away from the first conductive medium layer 102 by:

evaporating a reflecting material on one surface of the first conductive medium layer 102 by using a first mask with an opening pattern to form a first sub-reflecting layer 103a; then evaporating a reflecting material on one surface of the first conductive medium layer 102 by adopting a second mask opposite to the opening pattern of the first mask to form a second sub-reflecting layer 103b; or

Evaporating a reflecting material on the surface of the first conductive medium layer 102 far away from the substrate base plate 101 by adopting a second mask to form a second sub-reflecting layer 103b; then evaporating a reflective material on the surface of the first conductive medium layer 102 far away from the substrate base plate 101 by using a first mask to form a plurality of independently spaced first sub-reflective layers 103a;

the first sub-reflective layer 103a and the second sub-reflective layer 103b are disposed on the same layer and connected to each other; and the first sub-reflective layer 103a and the second sub-reflective layer 103b are made of different materials.

It can be understood that the opening pattern of the first mask corresponds to the position of the first sub-reflective layer 103a, and the opening pattern of the second mask corresponds to the second sub-reflective layer 103b. More specifically, in the specific example as shown in fig. 2, the anode reflective layer 103 is composed of a first sub-reflective layer 103a and a second sub-reflective layer 103b, and the opening pattern of the first reticle and the opening pattern of the second reticle are opposite.

It can be understood that, by using metal materials of different materials and using different masks, the first sub-reflective layer 103a and the second sub-reflective layer 103b are formed on the first conductive medium layer 102 by a plurality of evaporation methods, and a plurality of surface regions with different roughness can be formed on the surface of the anode reflective layer 103 away from the first conductive medium layer 102.

In other embodiments, the rugged surface structure is formed on the side of the anode reflection layer 103 away from the first conductive medium layer 102 by the following method:

evaporating a reflecting material on one surface of the first conductive medium layer 102 by using a first mask with an opening pattern to form a first sub-reflecting layer 103a; evaporating a reflective material on the first conductive medium layer 102 by adopting a second mask opposite to the opening pattern of the first mask to form a second sub-reflective layer 103b; the first sub-reflective layer 103a and the second sub-reflective layer 103b are disposed on the same layer and connected to each other; and the thicknesses of the first sub reflective layer 103a and the second sub reflective layer 103b are different.

By adopting the above method, the thicknesses of the first sub-reflective layer 103a and the second sub-reflective layer 103b are different, so that a small height difference can be formed on the surface of the anode reflective layer 103 away from the first conductive medium layer 102, and the anode reflective layer 103 has an uneven surface structure.

In some preferred embodiments of the present invention, by using the preparation methods in the two embodiments, not only a plurality of surface regions with different roughness but also an uneven surface structure are formed on the surface of the anode reflection layer 103 away from the first conductive medium layer 102; so that the surface roughness of the anode reflecting layer 103 far from the first conductive medium layer 102 is different and has a slight height difference.

A plurality of surface areas with different roughness and/or the anode reflecting layer 103 with an uneven surface structure are formed by adopting a plurality of evaporation methods, and the process is simple and easy to implement; and also facilitates control of the micro-height differences of the array matrix.

In some of these embodiments, the first conductive dielectric layer 102 is formed on the substrate by magnetron sputtering; and forming a second conductive medium layer 104 on one surface of the anode reflecting layer 103 far away from the first conductive medium layer 102 by a magnetron sputtering method. The first conductive dielectric layer 102 and the second conductive dielectric layer 104 may be selected from one of IZO, ITO, AZO, ATO, and FTO.

It should be noted that the specific preparation method of the first conductive medium layer 102 and the second conductive medium layer 104 in the present invention is not limited to the magnetron sputtering method, and other existing methods may be adopted to form the first conductive medium layer 102 and the second conductive medium layer 104.

It should be noted that the specific method for preparing the anode reflective layer 103 in the present invention is not limited to the above-mentioned multi-pass evaporation method, and other conventional methods may be used to form the anode reflective layer 103 having a plurality of surface regions with different roughness and/or having an uneven surface structure.

In addition, the material of the bottom layer (close to the first conductive medium layer 102) of the anode reflection layer 103 is not limited, and may be the same or different; a surface layer with surface areas of different roughness and/or a surface layer with a rugged surface structure may be formed by using different materials only on the surface of the anode reflective layer 103 on the side away from the first conductive medium layer 102.

In other embodiments of the present invention, there is also provided a display device which is a top emission type display device.

The display device includes a base substrate 101, and the anode structure, the light-emitting layer (not shown), and the cathode (not shown) of the present invention stacked on the base substrate 101 in this order.

The anode structure is disposed on the substrate 101, and a surface of the first conductive medium layer 102 in the anode structure, which is away from the anode reflective layer 103, is disposed on the substrate 101, so that the anode reflective layer 103 has different roughness surface areas and/or a surface with a rugged surface structure faces a side where the light emitting layer is located.

The display device has high light extraction efficiency and wide viewing angle. The display device can be applied to the display fields of mobile phones, flat panels and the like.

It is understood that the substrate may be an array substrate. It will be appreciated that in some examples, the display device may further include a hole-functional layer and/or an electron-functional layer, the hole-functional layer being disposed between the anode structure and the light-emitting layer. The electronic function layer is arranged between the luminous layer and the cathode. It will be appreciated that in some examples, the display device may further include an encapsulation layer disposed on the cathode for encapsulating the light emitting layer. And will not be described further herein.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims, and the description and the drawings can be used for explaining the contents of the claims.

Claims (13)

1. An anode structure, comprising:

a first conductive medium layer;

the anode reflecting layer is arranged on the first conductive medium layer, and the surface of the anode reflecting layer, which is far away from the first conductive medium layer, is provided with a plurality of surface regions with different roughness and/or an uneven surface structure; and

and the second conductive medium layer is arranged on the surface of the anode reflecting layer far away from the first conductive medium layer.

2. The anode structure of claim 1, wherein the anode reflective layer comprises:

a first sub-reflective layer;

the second sub-reflecting layer and the first sub-reflecting layer are arranged at the same layer;

the material of the first sub-reflecting layer is different from that of the second sub-reflecting layer, so that a plurality of surface regions with different roughness are formed on the surface, away from the first conducting medium layer, of the anode reflecting layer;

and/or the thicknesses of the first sub-reflecting layer and the second sub-reflecting layer are different, so that the surface of the anode reflecting layer far away from the first conductive medium layer forms the rugged surface structure.

3. The anode structure of claim 2, wherein the first sub-reflective layer is a plurality of sub-reflective layers independently disposed at intervals on the first conductive medium layer; the second sub-reflecting layers are arranged at the gaps among the first sub-reflecting layers to connect the first sub-reflecting layers with each other.

4. The anode structure of claim 3, wherein a plurality of said first sub-reflecting layers are arranged in an array.

5. The anode structure of claim 3, wherein the materials of the plurality of first sub-reflective layers are not all the same and/or the heights of the plurality of first sub-reflective layers are not all the same.

6. The anode structure according to any one of claims 3 to 5, wherein a material of the plurality of first sub-reflective layers and the second sub-reflective layers is at least one selected from silver, aluminum, copper, iron, gold, and palladium.

7. The anode structure of any one of claims 3 to 5, wherein the surfaces of the plurality of first sub-reflective layers and/or the second sub-reflective layers away from the first conductive medium layer are all planar.

8. The anode structure of any one of claims 3 to 5, wherein each of the plurality of first sub-reflective layers and the second sub-reflective layer has a thickness in a range of 140nm to 200nm; the thickness of the second sub-reflecting layer is larger than that of the first sub-reflecting layer, and the thickness difference between the second sub-reflecting layer and the first sub-reflecting layer is 2 nm-3 nm.

9. The anode structure of claim 1, wherein the first conductive dielectric layer and the second conductive dielectric layer are each selected from at least one of IZO, ITO, AZO, ATO, and FTO.

10. The anode structure of claim 1, wherein the first conductive dielectric layer has a thickness in a range from 10nm to 20nm; the thickness range of the second conductive medium layer is 50 nm-100 nm.

11. A display device is characterized by comprising a substrate base plate, and an anode structure, a light-emitting layer and a cathode which are sequentially stacked on the substrate base plate, wherein the anode structure is the anode structure in any one of claims 1 to 10, and the surface of a first conductive medium layer of the anode structure, which is far away from an anode reflecting layer, is arranged on the substrate base plate.

12. A preparation method of an anode structure is characterized by comprising the following steps:

forming a first conductive medium layer;

forming an anode reflecting layer on the first conductive medium layer, and enabling the anode reflecting layer to be far away from the surface of the first conductive medium layer to form a plurality of surface regions with different roughness and/or form a surface structure with unevenness;

and forming a second conductive medium layer on one surface of the anode reflecting layer far away from the first conductive medium layer.

13. The method of claim 12, wherein the step of forming an anode reflective layer on the first conductive medium layer comprises:

evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate, by adopting a first mask with an opening pattern to form a plurality of independently spaced first sub-reflecting layers; then evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate, by adopting a second mask opposite to the opening pattern of the first mask to form a second sub-reflecting layer; or

Evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate base plate, by using the second mask plate to form the second sub-reflecting layer; then evaporating a reflecting material on the surface of the first conductive medium layer, which is far away from the substrate, by using the first mask plate to form a plurality of independent and spaced first sub-reflecting layers;

the first sub-reflecting layer and the second sub-reflecting layer are made of different materials and/or have different thicknesses.

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