CN115664540A - Hybrid integrated system for transmitting terahertz signals and chip thereof - Google Patents
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Abstract
The invention discloses a hybrid integrated system for transmitting terahertz signals and a chip thereof, and the hybrid integrated system comprises a chip body, a laser module, a y-waveguide wave combining module and a high-speed large-bandwidth detector module, namely a high-speed large-bandwidth PD module, which are integrated on the chip body; the number of the laser modules is two, the two laser modules are connected with the high-speed large-bandwidth PD module through the y-waveguide wave-combining module, signals output by the two laser modules are transmitted to the y-waveguide wave-combining module to achieve frequency mixing, the signals after frequency mixing are processed through the high-speed large-bandwidth PD module, and terahertz signals are output. The terahertz tunable laser has the advantages that the generated signal has a wide frequency range, can be stably emitted, can realize continuous modulation of the signal, is characterized in that two lasers are used for beating the frequency to a high-speed large-bandwidth PD device to generate a stable and adjustable terahertz signal, photonic lead bonding is used, namely PWB technology is used for accurate integration, and the optical coupling efficiency is high.
Description
Technical Field
The invention relates to the technical field of photoelectron, in particular to a hybrid integrated chip for transmitting terahertz signals, which can be applied to the fields of medical diagnosis, astronomy, object imaging, industrial flaw detection, broadband mobile communication, radar detection and the like.
Background
Traditional wireless communication is divided into wireless radio frequency communication and wireless optical communication, wherein the carrier frequency range of the wireless radio frequency communication is as follows: 10KHz-300GHz, the wireless optical communication frequency range is: 1012-1017Hz. With the development of the modern society, the requirement on the wireless communication rate is continuously increased, and the necessity of the development of the modern communication technology is to use terahertz waves as carrier waves to carry out wireless communication.
The frequency of terahertz (THz) wave is 0.1-10THz, is coherent electromagnetic radiation between microwave and infrared, and is mainly applied to the fields of spectrum, imaging and communication.
The terahertz communication technology is established on the basis of traditional wireless communication, and the terahertz communication system has the characteristics of large bandwidth, high transmission rate, good confidentiality and the like. Therefore, the terahertz communication technology can realize higher-speed information transmission and seize bandwidth resources, and has high economic value and very high strategic significance.
On the other hand, because terahertz frequency band photon energy is lower, can not cause the damage to the testee to certain nonpolar material has good penetrability, consequently utilizes advantages such as the penetrability and the security of terahertz wave to carry out imaging technique development, can image the testee, thereby realizes nondestructive test and safety inspection.
Therefore, an urgent need exists in the art to provide a structure for generating a terahertz signal that has a wide signal frequency range, can stably emit the terahertz signal, and can continuously modulate the terahertz signal.
Disclosure of Invention
In view of the above, the present invention provides a hybrid integrated system for transmitting terahertz signals and a chip thereof, and aims to solve the above technical problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a hybrid integrated chip for transmitting terahertz signals comprises a chip body, and a laser module, a y-waveguide wave-combining module and a high-speed large-bandwidth PD module which are integrated on the chip body; the number of the laser modules is two, the two laser modules are connected with the high-speed large-bandwidth PD module through a y-waveguide wave-combining module, the two laser modules output signals to the y-waveguide wave-combining module to realize frequency mixing, the signals after frequency mixing are processed through the high-speed large-bandwidth PD module, and terahertz signals are output.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the laser modules for beat frequency have a fixed frequency difference, and sum-frequency and difference-frequency signals are generated after frequency mixing.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the high-speed large-bandwidth PD module has a wide bandwidth and a high response. The designed waveguide type high-speed large-bandwidth PD can effectively reduce the junction area of a PD device and obtain large bandwidth and high response.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the adjustment of the frequency of the output signal is realized by changing the frequency of the beat frequency of the laser modules, and the frequency difference between the two beat frequencies of the laser modules determines the frequency of the output terahertz signals. Different frequency lasers are integrated into an array in the device, and output terahertz signals in the range of 0.1-1.8THz is achieved.
Preferably, in the hybrid integrated chip for transmitting a terahertz signal, the bonding among the laser module, the y-waveguide combiner module and the high-speed large-bandwidth PD module is wire bonded by using PWB technology, so as to reduce optical coupling loss.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the wavelength frequency of the laser module can be adjusted by adjusting an applied voltage, and the continuous change of the output signal is realized by combining the laser module array.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the y-waveguide combining module is composed of three single-mode waveguides.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the junction of the three single-mode waveguides and the junction of the laser module light outlet and the single-mode waveguides are connected by photonic wire bonding.
Preferably, in the hybrid integrated chip for transmitting a terahertz signal, a microstrip line output signal is deposited on the high-speed large-bandwidth PD module.
Preferably, in the hybrid integrated chip for transmitting terahertz signals, the laser module is a distributed feedback laser.
According to the technical scheme, compared with the prior art, the hybrid integrated chip for transmitting the terahertz signal is disclosed, the chip integrates the laser and the PD, and the output of the terahertz high-frequency signal can be realized by beating the dual-wavelength beat frequency into the high-speed large-bandwidth PD. The dual-wavelength beat frequency is characterized in that output light of two lasers generates high-frequency and low-frequency signals after being combined through a y-wave, the signals are transmitted to a high-speed large-bandwidth PD, the low-frequency signals can be filtered due to the limitation of the PD bandwidth, and the high-frequency signals act with the PD to generate terahertz signals capable of being output.
The chip integrates lasers with different frequencies into an array, light with fixed frequency intervals can be generated to be emitted into a large-bandwidth high-response PD, and Photonic Wire Bonding (PWB) is used at the joint of a waveguide and the waveguide to reduce optical coupling loss. The laser can modulate the lasing wavelength through voltage, can accurately realize continuous adjustability of signals within the range of 0.1-1.8THz by combining a laser array, and has the characteristics of fast response, low loss and the like.
The invention discloses a hybrid integrated system capable of realizing terahertz signals and a chip thereof, which have the advantages that the generated signals have wide frequency range, can be stably transmitted and can realize continuous modulation of the signals.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a laser structure according to the present invention;
FIG. 2 is a schematic diagram of the laser and y-waveguide integration provided by the present invention;
FIG. 3 is a schematic view of an electrode provided by the present invention;
FIG. 4 is a schematic diagram of the UTCPD structure provided by the present invention;
FIG. 5 is a schematic diagram of a tapered PWB waveguide coupling laser and single-mode silicon waveguide provided by the present invention;
FIG. 6 is a schematic diagram of a chip according to the present invention.
Wherein:
1-a laser module; 2-high speed large bandwidth PD module; 3-y waveguide wave-combining module; 4-chip body.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The chip consists of three modules, namely a laser module 1, a y-waveguide wave-combining module 3 and a high-speed large-bandwidth PD module 2, and corresponds to three processes of light emitting, wave combining and signal generating.
As shown in fig. 1, the laser module 1 integrated in the chip is a distributed feedback laser (DFB laser), the grating period is designed so that the laser module 1 operates in 1550nm band, and the laser waveguide is designed as a single-mode waveguide, so as to ensure that the output light of the laser module in 1550nm communication band has good characteristics.
The laser module 1 integrated on the chip keeps a fixed frequency interval, two adjacent laser light outlets are connected with the y waveguide, light with similar frequency is mixed through the y waveguide and is connected to the high-speed large-bandwidth PD to achieve output of terahertz signals.
The principle of mixing is the multiplication of two sinusoidal signals at frequencies ω 1 and ω 2 to produce a "sum frequency" and a "difference frequency".
Obtaining frequency-summed up-converted cos ((omega)) 1 +ω 2 )t+(θ 1 +θ 2 ) Frequency subtracted down-converted cos ((omega)) 1 -ω 2 )t+(θ 1 -θ 2 ) And terahertz signals can be realized after PD filtering. On the basis of the method, a plurality of laser modules 1 are integrated in a chip body 4, and a wavelength array is arranged to realize continuous change of frequency signals ranging from 0.1THz to 1.8 THz.
A schematic structural diagram after the two lasers and the y waveguide are integrated is shown in fig. 2, wherein a connection position of a light outlet of the laser and the y waveguide and a junction position of the y waveguide are connected by using photonic wire bonding to reduce optical coupling loss, and chip performance can be improved well.
In the orientation of FIG. 2, the right-hand side of the y-waveguide structure consists of only a single mode waveguide, which supports a characteristic mode with a transverse field distribution E L (x, y) = E (x, y). On the left, the device consists of two identical single-mode waveguides with a waveguide spacing S. The transverse mode field distribution of the upper and lower waveguides is:
and
if the waveguide structure on the left is considered as a whole, it has two characteristic modes called supermodes: symmetrical mode E RS (x，y)＝E RU +E RL And antisymmetric mode E RS (x，y)＝E RU -E RL 。
When the input light is on the left, the input light can be written as:
for the case where the input is symmetric mode:
The PD provided by the chip adopts a doped P area as a light absorption area and combines a PIN junction as a unipolar electron transport structure to form the PD, light absorption and photo-generated electron concentration are carried out in different areas, and only electrons are used as active carriers. The schematic structure is shown in fig. 4. A thicker intrinsic layer (i-type layer) is added between the p-type semiconductor and the n-type semiconductor, and the undoped intrinsic layer can inhibit energy band mutation caused by discontinuity of materials, reduce current blocking and promote electron transport. The region in the PIN junction where the built-in electric field is present is the entire i-type layer plus the space charge regions on both sides, so the barrier region is very wide. The space charge region can be reduced by adding reverse bias voltage on the PIN junction, and the built-in electric field is increased, so that carriers can pass through the junction region more quickly, and a larger carrier transport rate is obtained.
A waveguide layer is arranged between the collection layer and the substrate and is matched with the refractive index and the propagation constant of the i-type layer, so that an optical mode field can be deflected upwards, input light of the waveguide can be coupled into the p-type absorption layer, and waveguide incidence of PD input light is achieved. And an intrinsic material layer matched with the lattice of the absorption layer is added between the absorption layer and the collection layer to increase the continuity of the conduction band. Similarly, the diffusion barrier layer is arranged, so that the discontinuity of a conduction band of an interface between the diffusion barrier layer and the absorption layer is increased, and the unidirectional movement of electrons is realized.
The optimized PWB polymer waveguide size with the laser end face is determined by simulating the coupling efficiency of the polymer waveguide structure and the laser spot, and the coupling efficiency is more than 90 percent within the error range of 0.5 mu m, and the process processing tolerance range is larger. On the other hand, since the end face spot size of each optical device is largely different, there is inevitable loss during transmission. The chip is designed to be conical by using a PWB waveguide, and the effect of mode spot conversion is achieved by using a slowly-varying structure as shown in FIG. 5. The polymer waveguide conical structure has better coupling efficiency and lower loss.
After the three modules are integrated on the chip body 4, microstrip line output signals are deposited on the PD. The schematic diagram of the chip composition is shown in fig. 6.
1. The invention comprises a PWB hybrid integration technology:
photonic Wire Bonding (PWB) uses optical waveguides rather than traditional metals to interconnect different optical chips, chips and fibers. The method is characterized in that a multi-photon polymerization effect is caused by utilizing a two-photon exposure principle in photoresist, and a polymer waveguide structure with any shape can be realized by combining a 3D printing technology. The invention uses the free radical polymerization type photoresist IP-Dip, does not need baking and curing, does not need to use quartz glass for covering, and can avoid aberration because the lens is directly immersed in the photoresist.
Specifically, the PWB scheme can be subdivided into the following steps:
1) Different optical chips are placed on the same substrate. The shape of the substrate can be designed to compensate for the height differences between different chips. The distance between the two chips is limited by the size of the laser write field.
2) The optical chip is cleaned with acetone, alcohol, etc. and photoresist is deposited between two chips to be interconnected.
3) Based on machine vision techniques, areas requiring interconnection are identified by means of a marker and exposed to form the PWB. The shape of the PWB can be adjusted accordingly according to the parameters of the distance between the chips, MFD and the like.
4) And removing the unexposed photoresist.
2. Manufacturing process of laser
Firstly, making a sampling grating, etching a single-mode waveguide after the grating is made, plating an oxide film for electric isolation, opening an electrode window, evaporating an electrode on the electrode, thinning and evaporating a negative electrode on the electrode. Finally, the bar is formed by dissociation, and the end face coating is carried out.
1) Fabrication of sampled gratings
The preparation method of the sampling grating comprises the following steps: firstly, photoresist is spin-coated on a wafer, then a holographic exposure technology is utilized to form a uniform grating on a substrate, and then a designed mask with a sampling structure is used for carrying out contact type secondary exposure to obtain a sampling grating pattern. And then transferring the exposed pattern to a substrate through development and etching to obtain a sampling grating structure. Wherein the basic grating period is determined according to the designed laser wavelength, i.e. around the bragg wavelength.
2) Fabrication of lasers
The laser provided by the invention adopts the anti-reflection film at one end, the end face reflectivity of the anti-reflection film is within the range of 0.05-1%, and the reflectivity of the high-reflectivity film at the other end is more than 95%, so that the light output power of the laser can be increased. The laser operates in 1550 wave band, and the value of the grating period needs to be designed according to the specific required lasing wavelength.
3. The high-speed large-bandwidth PD provided by the invention
The thin layer of high-speed large-bandwidth PD is grown by a Molecular Beam Epitaxy (MBE) method to realize precise control on the composition, thickness and doping. The epitaxial structure mainly comprises a substrate, an n-type contact layer, a waveguide layer, an n-type collecting layer, an i-type intrinsic layer, a p-type absorption layer, a diffusion barrier layer and a p-type contact layer from bottom to top. The gradual change of the component layers is designed in consideration of the problem of lattice matching between the layers, and the stress and the influence possibly brought by piezoelectric polarization caused by the stress are reduced as much as possible.
To achieve a large bandwidth, the area of the PD needs to be designed to be small, which imposes high requirements on the machining accuracy. The precision of electron beam exposure can reach nanometer level. The structure of the PD is etched in the chip by using an electron beam exposure technology, and the electrode is deposited on the structure, so that the small area of the PD and the patterns of the electrode, the waveguide and the like can be well realized.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A hybrid integrated system for transmitting terahertz signals is characterized in that two laser modules (1) are adopted to beat frequency to a high-speed large-bandwidth PD module (2) and output adjustable terahertz signals.
2. A hybrid integrated system for transmitting terahertz signals according to claim 1, wherein the laser modules (1) for beat frequency have a fixed frequency difference therebetween, and frequency mixing generates sum and difference frequency signals.
3. The hybrid integrated system for transmitting terahertz signals according to claim 1, wherein the high-speed large-bandwidth PD module (2) is a wide-bandwidth high-response PD module.
4. Hybrid integrated system for transmitting terahertz signals according to claim 1, characterized in that the adjustment of the output signal frequency is achieved by changing the frequency of the laser module (1) of the beat frequency.
5. Hybrid integrated system for transmitting terahertz signals according to claim 1, characterized in that the laser module (1) is a distributed feedback laser.
6. A chip employing the hybrid integrated system for transmitting terahertz signals according to any one of claims 1 to 5, comprising a chip body (4), and a laser module (1), a y-waveguide combiner module (3) and a high-speed large-bandwidth PD module (2) integrated on the chip body (4); the number of the laser modules (1) is two, the two laser modules (1) are connected with the high-speed large-bandwidth PD module (2) through the y-waveguide wave-combining module (3), signals output by the two laser modules (1) are mixed in the y-waveguide wave-combining module (3), the mixed signals are processed through the high-speed large-bandwidth PD module (2), and terahertz signals are output.
7. The hybrid integrated chip for transmitting terahertz signals as claimed in claim 6, wherein the bonding between the laser module (1), the y-waveguide combiner module (3) and the high-speed large-bandwidth PD module (2) is wire bonded using PWB technology.
8. Hybrid integrated chip for transmitting terahertz signals according to claim 6, characterized in that the wavelength frequency of the laser modules (1) is tunable by adjusting an applied voltage, and the continuous variation of the output signal is realized in combination with the array of laser modules (1).
9. The hybrid integrated chip for transmitting terahertz signals according to claim 6, wherein the y-waveguide wave-combining module (3) is composed of three single-mode waveguides; the junction of the three single-mode waveguides and the joint of the light outlet of the laser module (1) and the single-mode waveguides are connected by adopting photon lead bonding.
10. The hybrid integrated chip for transmitting terahertz signals according to claim 6, wherein the high-speed large-bandwidth PD module (2) is deposited with microstrip line output signals.
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