CN1156338A - High temperature super conductive film substrate step intrinsic Josephson junction array and its preparing method - Google Patents
High temperature super conductive film substrate step intrinsic Josephson junction array and its preparing method Download PDFInfo
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- CN1156338A CN1156338A CN 96113183 CN96113183A CN1156338A CN 1156338 A CN1156338 A CN 1156338A CN 96113183 CN96113183 CN 96113183 CN 96113183 A CN96113183 A CN 96113183A CN 1156338 A CN1156338 A CN 1156338A
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Abstract
The present inventionsolved the technological problem for preparing high temp. super conductive film intrincic Josephson junction. On the small angle step substrate the high temp. superconductive film is made by epitaxial growth method. At the position leaping over the step of the superconductive film, a microbridge is etched. Said invention utilizes the intrinsic layer to layer Josephson effect of high temp. superconductive material and provides a kind of new construction of Josephson junction and the making method thereof. Said junction array alone can be used as superconductive device, it can be also composed into SQUID device and other super conductive integrated circuit.
Description
The present invention relates to the Josephson's junction device in the high temperature superconducting materia, particularly relate to high-temperature superconducting thin film intrinsic Josephson junction battle array and preparation method thereof.
Documents 1:High-Tc substrate step junctions operated at 77K, H.M.Jiang, et al, Supercond.Sci.Techmol., Vol.5, P.160,1992.
Documents 2:Substrate step-edge YBa
2Cu
3O
7Rf SQUIDs, K.P.Daly, et al, Appl.Phy.Lett., Vol.58, P.543,1991.
Documents 3:Investigation of step-edge microbridges for application as microwave detecors, M.Daginnus, et al, Supercond.Sci.Technol., Vol.4, P.482,1991.
Documents 4:Microstructure of epitaxial YBa
2Cu
3O
7Films on step-edge SrTiO
3Substrates, C.L.Jia, et al, Physica C, Vol.175, P.545,1991.
In documents 1, documents 2 and the documents 3 between Josephson junction employed substrate level side and the substrate surface angle all greater than 45 the degree, requirement is the bigger the better, wish that angle equals 90 degree between substrate level side and the substrate surface, be that step side is best perpendicular to substrate surface, then the superconducting thin film microbridge is best at two corners' two crystal boundaries of formation of step.This Josephson junction is connected to form a little less than utilizing crystal boundary, and each microbridge comprises two Josephson junctions.Because it is very difficult to make the substrate level of 90 degree, the quality of crystal boundary is restricted, and has therefore also influenced the quality of Josephson junction.
In the documents 4 author with high score variability transmission electron microscope observing the direction that high-temperature superconducting thin film is grown under angle situation between different substrate levels side and the substrate surface [2].When angle between step side and the substrate surface is spent greater than 60, can produce crystal boundary, when angle is spent less than 45, not have crystal boundary to produce in step corner.Its conclusion is that angle can be used for making the substrate level junction device near 90 steps of spending, and low-angle step high-temperature superconducting thin film can not be made Josephson junction.
People always wish to produce good crystal boundary when making the substrate level knot, traditional technical scheme is that the angle angle is spent greater than 60 between step side and the substrate surface.The objective of the invention is to utilize that the physical structure of high temperature superconducting materia intrinsic makes that a kind of technology is simple, good reproducibility, high-quality high-temperature superconducting thin film low-angle substrate level intrinsic Josephson junction battle array.
A kind of preparation force method of high temperature super conductive film substrate step intrinsic Josephson junction array, but backing material is selected the monocrystal material [1] of epitaxial growth stratiform high-temperature superconducting thin film for use, substrate surface [2] is parallel with 001 of monocrystalline, on substrate surface [2], make step, epitaxial growth high-temperature superconducting thin film [4] on the step substrate, superconducting thin film [4] thickness is less than shoulder height, superconducting thin film [4] is etched into microbridge [5] shape crossing over the step place, requires between step side [3] and the substrate surface [2] angle to spend less than 45 greater than 0 degree.
A kind of high temperature super conductive film substrate step intrinsic Josephson junction array, epitaxial growth stratiform high-temperature superconducting thin film [4] on the step substrate, superconducting thin film [4] thickness is less than shoulder height, superconducting thin film microbridge [5] is crossed over step, angle is spent less than 45 greater than 0 degree between substrate level side [3] that makes and the substrate surface [2], epitaxially grown high-temperature superconducting thin film [4] Cu-O aspect [6] is all parallel with substrate surface [2] on the step substrate, and superconducting thin film microbridge [5] is in series by the intrinsic Josephson junction and constitutes.
The preparation method of high temperature super conductive film substrate step intrinsic Josephson junction array:
Select for use can epitaxial growth stratiform high-temperature superconducting thin film monocrystal material [1] as backing material.Adopt conventional crystal orientation, cutting and polishing technology, on backing material, make and 001 parallel plane of crystal.Adopt argon ion or other conventional lithographic method on substrate surface [2], to etch the low-angle substrate level, require between step side [3] and the substrate surface [2] angle to spend less than 45 greater than 0 degree.At step substrate epitaxial growth high-temperature superconducting thin film [4], the thickness of film is less than the height of step.Adopt the method leap substrate level of wet method or dry etching to etch superconducting thin film microbridge [5].
The structure of high temperature super conductive film substrate step intrinsic Josephson junction array:
As depicted in figs. 1 and 2, angle α spends less than 45 greater than 0 degree between substrate level side [3] and the substrate surface [2], and the height of step is by the technical requirement decision of intrinsic Josephson junction battle array.The thickness of epitaxial growth high-temperature superconducting thin film [4] is less than shoulder height on the step substrate.As shown in Figure 2, epitaxially grown high-temperature superconducting thin film [4] Cu-O aspect [6] is all parallel with substrate surface [2] on the step substrate.Each Cu-O layer on the superconducting thin film microbridge [5] all is a superconducting electrode, and two adjacent superconducting electrodes are then formed an intrinsic Josephson junction, and a superconducting thin film microbridge [5] then is that a plurality of intrinsic Josephson junctions are in series and constitute.
The present invention breaks people and pursues the conventional art idea that forms crystal boundary generation Josephson effect in two corners of step, changes the technical scheme of pursuing the wide-angle step simply.The present invention uses the low-angle step, utilizes the intrinsic interlayer Josephson effect of high temperature superconducting materia itself to make Josephson junction.Because thickness, the distance between the adjacent C u-O layer of each Cu-O layer all are the unanimities on the atomic size, material between the Cu-O layer and structure also all have the consistency of height, have avoided the shortcoming of the poor repeatability of manual manufacture Josephson junction.Therefore, can produce the Josephson junction battle array of performance unanimity.
Because the length of single intrinsic Josephson junction has only tens dusts, adopt the present invention can produce the array of a plurality of intrinsic Josephson junction series connection very easily.The height of adjustment substrate level and the thickness of high-temperature superconducting thin film [4] can be adjusted the number of the intrinsic Josephson junction of connecting in the intrinsic Josephson junction battle array easily.
Fig. 1 is the schematic diagram of high temperature super conductive film substrate step intrinsic Josephson junction array.
Fig. 2 be high-temperature superconducting thin film along microbridge power to horizontal throwing face schematic diagram.
The present invention is applicable to the high temperature superconducting materia of all layer structures, as Bi-Sr-Ca-Cu-O, Tl-Ba-Ca-Cu-O, Hg-Ba-Ca-Cu-O and Y-Ba-Cu-O material and their element substitution material.Be best wherein with Bi-Sr-Ca-Cu-O, Tl-Ba-Ca-Cu-O and their element substitution material result.
Backing material can be selected LaAlO for use
3, SrTiO
3, MgO and ZrO
2But and the monocrystal material of other epitaxial growth high-temperature superconducting thin film [1], wherein with LaAlO
3And SrTiO
3Monocrystal material [1] is best.
As shown in Figure 2, the folder angle [alpha] of step side [3] and substrate surface [2] is desirable greater than 0 degree arbitrarily angled less than 45 degree.The angle of every step side [3] and substrate surface [2] value in spending less than 45 greater than 0 degree all belongs to technical characterictic of the present invention and protects.According to required knot battle array parameter request difference, desirable different α value.α get 5 the degree and 35 the degree between arbitrary value the time effect be best.The height of step is not limit, and is generally better greater than 100nm.
The thickness of high-temperature superconducting thin film can decide according to required junction device parameter request, but must be less than the height of step.
The direction of microbridge can be chosen in the very wide angular range, but being best along the direction perpendicular to step.
The width of microbridge [5] without limits, generally the number micrometer ranges in.
But select the backing material of epitaxial growth stratiform structured high temperature superconducting thin film for use, make the single crystalline substrate step according to requirement of the present invention, epitaxial growth high-temperature superconducting thin film [4] on the step substrate, the Cu-O layer is parallel to each other and is parallel with step substrate surface [2] in microbridge [5], microbridge [5] is in series by the intrinsic Josephson junction and constitutes, as shown in Figure 2.
Embodiment 1: adopt LaAlO
3Single crystalline substrate, angle equals 30 degree, the high 0.34 μ m of step between step side [3] and the substrate surface [2].Extension Tl
2Ba
2CaCu
2O
8Superconducting thin film [4], thickness 0.24 μ m.Adopt the wet method photoetching and acid corrosion method usedly carve superconducting thin film microbridge [5] across step, microbridge [5] width 3 μ m, length 20 μ m.Gained Josephson junction device I-V characteristic curve under liquid nitrogen temperature has significantly to return and stagnates, critical current Ic=3.2mA, the ratio Ic/Ir=1.6 of critical current Ic and backspace electric current I r, character voltage Vc=1.5V.
Embodiment 2: adopt LaAlO
3Single crystalline substrate, angle equals 10 degree, the high 0.24 μ m of step between step side [3] and the substrate surface [2].Extension Tl
2Ba
2CaCu
2O
8Superconducting thin film [4], thickness 0.18 μ m.Adopt the wet method photoetching and acid corrosion method usedly carve superconducting thin film microbridge [5] across step, microbridge [5] width 6 μ m, length 20 μ m.Gained Josephson junction device I-V characteristic curve under liquid nitrogen temperature has significantly to return and stagnates, critical current Ic=0.6mA, the ratio Ic/Ir=1.2 of critical current Ic and backspace electric current I r, character voltage Vc=0.8V.
High temperature super conductive film substrate step intrinsic Josephson junction array can use as superconductive device separately, also can be combined into SQUID device and other superconducting integrated circuit.
Claims (4)
1. the preparation method of a high temperature super conductive film substrate step intrinsic Josephson junction array, but backing material is selected the monocrystal material [1] of epitaxial growth stratiform high-temperature superconducting thin film for use, substrate surface [2] is parallel with 001 in crystal, on substrate surface [2], make step, epitaxial growth high-temperature superconducting thin film [4] on the step substrate, superconducting thin film [4] thickness is less than shoulder height, superconducting thin film [4] is crossed over step be etched into microbridge [5] shape, it is characterized in that angle is spent less than 45 greater than 0 degree between step side [3] and the substrate surface [2].
2. high temperature super conductive film substrate step intrinsic Josephson junction array, epitaxial growth stratiform high-temperature superconducting thin film [4] on the step substrate, superconducting thin film [4] thickness is less than shoulder height, superconducting thin film microbridge [5] is crossed over step, it is characterized in that angle is spent less than 45 greater than 0 degree between substrate level side [3] and the substrate surface [2], epitaxially grown high-temperature superconducting thin film [4] Cu-O aspect [6] is all parallel with substrate surface [2] on the step substrate, and superconducting thin film microbridge [5] is in series by the intrinsic Josephson junction and constitutes.
3. the preparation method of high temperature super conductive film substrate step intrinsic Josephson junction array according to claim 1, it is characterized in that between step side [3] and the substrate surface [2] angle greater than 5 degree less than value arbitrarily in the 35 degree scopes.
4. high temperature super conductive film substrate step intrinsic Josephson junction array according to claim 2, it is characterized in that between step side [3] and the substrate surface [2] angle greater than 5 degree less than value arbitrarily in the 35 degree scopes.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1329737C (en) * | 2004-05-19 | 2007-08-01 | 南开大学 | Method and device for measuring super conducting film surface resistance |
| CN101894906A (en) * | 2010-06-13 | 2010-11-24 | 中国科学院上海微系统与信息技术研究所 | Preparation method of superconducting step junction |
| US9248430B2 (en) | 2009-11-17 | 2016-02-02 | Petrochina Company Limited | Method for synthesis of 1-decene oligomer |
| CN113517386A (en) * | 2020-08-06 | 2021-10-19 | 阿里巴巴集团控股有限公司 | Josephson junction, preparation method and device of josephson junction and superconducting circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100346491C (en) * | 2003-06-18 | 2007-10-31 | 南京大学 | Method for preparing high-temperature superconducting material intrinsic junction |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62122288A (en) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | Superconductive weak coupling element |
| US5134117A (en) * | 1991-01-22 | 1992-07-28 | Biomagnetic Technologies, Inc. | High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction |
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1996
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1329737C (en) * | 2004-05-19 | 2007-08-01 | 南开大学 | Method and device for measuring super conducting film surface resistance |
| US9248430B2 (en) | 2009-11-17 | 2016-02-02 | Petrochina Company Limited | Method for synthesis of 1-decene oligomer |
| CN101894906A (en) * | 2010-06-13 | 2010-11-24 | 中国科学院上海微系统与信息技术研究所 | Preparation method of superconducting step junction |
| CN113517386A (en) * | 2020-08-06 | 2021-10-19 | 阿里巴巴集团控股有限公司 | Josephson junction, preparation method and device of josephson junction and superconducting circuit |
| CN113517386B (en) * | 2020-08-06 | 2022-05-31 | 阿里巴巴集团控股有限公司 | Josephson junction, preparation method and device of josephson junction and superconducting circuit |
| US11910730B2 (en) | 2020-08-06 | 2024-02-20 | Alibaba Group Holding Limited | Josephson junction, Josephson junction preparation method and apparatus, and superconducting circuit |
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